JP2006313672A - Plasma treatment method and plasma treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment method and a plasma treatment device wherein the base material can be treated uniformly and stably. <P>SOLUTION: This method comprises a first step of pinching the base material 18 by at least two pairs of pinch rolls 14, 16, and making the base material 18 travel at the shortest distance between two pairs of the pinch rolls 14, 16, and a second step of applying voltage to an electrode pair, generating electric discharge in a space between the electrode pair, making a treated gas 17 plasmatized after passing through its space flow out from an opening 13, and bringing the treated gas 17 into contact with the base material 18 for traveling between two pairs of the pinch rolls 14, 16 in a state that a plasma treatment head 12 having the opening 13 has been arranged so that the opening 13 is opposed to the base material 18 between two pairs of the pinch rolls 14, 16. The space is formed in order to arrange at least one of two pairs of the pinch rolls 14, 16 approaching the opening 13 while neighboring to the opening 13 of the plasma treatment head 12. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a plasma processing method and a plasma processing apparatus, and more particularly to a plasma processing method and a plasma processing apparatus suitable for performing plasma processing on an object to be processed located at a position away from a discharge space at a substantially normal pressure.

  Conventionally, various atmospheric pressure plasma treatments have been proposed in which plasma treatment such as surface modification, thin film formation, ashing, and cleaning of an object to be processed is performed using plasma generated under a pressure near atmospheric pressure.

  For example, in the so-called remote-type atmospheric pressure plasma processing, the object to be processed is moved relative to the opening of the plasma processing head through which plasmaized processing gas flows through the discharge space and flows out from the opening. Is sequentially brought into contact with the surface of the object to be processed, thereby performing plasma treatment on the surface of the object to be processed (see, for example, Patent Document 1).

Further, when the surface of a long base material is continuously processed, the base material is passed between two pairs of pinch rollers arranged at intervals, and is held straight between the two pairs of pinch rolls. The treated substrate is brought into contact with the treated substrate (see, for example, Patent Document 2).
JP 2002-237480 A JP 2000-208296 A

  For example, when a long base material is subjected to plasma processing by a remote method, as shown in FIG. 1, two pairs of pinch rolls 4 that sandwich the base material 8 on both sides of the plasma processing head 2 and rotate in the directions of arrows 4s and 6s. 6, the processing gas 7 flowing out from the opening 3 of the plasma processing head 2 is brought into contact with the base material 8 while the base material 8 is traveling in the direction of the arrow 8 s.

  The distance L1 between the two pairs of pinch rolls 4 and 6 needs to have a certain length. Therefore, depending on the material, thickness, and the like of the base material 8, the base material 8 is loosened or wrinkled between the two pairs of pinch rolls 4, 6. If slack or wrinkles occur in the base material 8, the gas flow becomes non-uniform, resulting in processing unevenness or abnormal discharge. In addition, the base material 8 comes into contact with surrounding members, and a defect such as a scratch occurs on the base material 8.

  In view of such circumstances, the present invention is intended to provide a plasma processing method and a plasma processing apparatus capable of uniformly and stably processing a substrate.

  In order to solve the above-described problems, the present invention provides a plasma processing method configured as follows.

  The plasma processing method includes first and second steps. In the first step, the substrate is sandwiched between at least two pairs of pinch rolls so that the substrate travels between the two pairs of pinch rolls in the shortest distance. In the second step, in a state where the plasma processing head having an opening is disposed so that the opening faces the substrate between the two pairs of pinch rolls, a voltage is applied to the opposing electrode pair, A discharge is generated in a space between the pair of electrodes, a processing gas that has been converted into plasma through the space is caused to flow out of the opening, and the processing gas is applied to the base material that travels between the two pairs of pinch rolls. Make contact. A space for arranging at least one of the two pairs of pinch rolls close to the opening is formed adjacent to the opening of the plasma processing head.

  In the above method, the space for disposing at least one of the pinch rolls close to the opening of the plasma processing head is provided with a notch for housing the pinch roll adjacent to the opening of the plasma processing head. The opening can be formed by narrowing the width of the opening side and making the plasma processing head tapered.

  According to the above method, at least one of the two pairs of pinch rolls is disposed in a space adjacent to the opening of the plasma processing head, and at least one of the two pairs of pinch rolls is brought close to the opening of the plasma processing head. The distance between can be shortened. Thereby, it is possible to prevent the base material from being slackened or wrinkled between the two pairs of pinch rolls. If there is no slack or wrinkle on the substrate, the treatment will not become unstable or non-uniform.

  Preferably, at least the outer peripheral surface of the pinch roll is resistant to the processing gas flowing out of the opening of the plasma processing head.

  When the distance between the two pairs of pinch rolls is shortened, at least the outer peripheral surface of the pinch roll is activated through the plasma even if the process gas flows out from the opening of the plasma processing head (even if the process gas is actually plasma). It may be a processing gas). Therefore, it is preferable that at least the outer peripheral surface of the pinch roll is resistant to the processing gas so that it is not corroded by the processing gas and the material is not deteriorated.

  Preferably, the pinch roll has an insulating property.

  When the distance between the two pairs of pinch rolls is shortened, the pinch rolls approach the electrode pair. When the pinch roll has conductivity, abnormal discharge is likely to occur between the electrode pair and the pinch roll. If the pinch roll has insulating properties, abnormal discharge can be prevented.

  In order to solve the above problems, the present invention provides a plasma processing apparatus configured as follows.

  The plasma processing apparatus applies a voltage to the opposing electrode pair, generates a discharge in a space between the electrode pair, and has a plasma processing head having an opening through which the plasmaized processing gas flows out. At least two pairs of pinch rolls sandwiching the traveling base material, and the opening of the plasma processing head is opposed to the base material traveling between the two pairs of pinch rolls between the two pairs of pinch rolls. In this type of apparatus, the processing gas flowing out from the opening is brought into contact with the base material traveling between the two pairs of pinch rolls. The plasma processing apparatus has a space for arranging at least one of the two pairs of pinch rolls close to the opening, adjacent to the opening of the plasma processing head.

  In the above configuration, the space for disposing at least one of the pinch rolls close to the opening of the plasma processing head is provided with a notch for accommodating the pinch roll adjacent to the opening of the plasma processing head. The opening can be formed by narrowing the width of the opening side and making the plasma processing head tapered.

  According to the above configuration, at least one of the two pairs of pinch rolls is disposed in a space adjacent to the opening of the plasma processing head, and at least one of the two pairs of pinch rolls is brought close to the opening of the plasma processing head. The distance between can be shortened. Thereby, it is possible to prevent the base material from being slackened or wrinkled between the two pairs of pinch rolls. If there is no slack or wrinkle on the substrate, the treatment will not become unstable or non-uniform.

  Preferably, at least the outer peripheral surface of the pinch roll is resistant to the processing gas flowing out of the opening of the plasma processing head.

  When the distance between the two pairs of pinch rolls is shortened, at least the outer peripheral surface of the pinch roll is activated through the plasma even if the process gas flows out from the opening of the plasma processing head (even if the process gas is actually plasma). It may be a processing gas). Therefore, it is preferable that at least the outer peripheral surface of the pinch roll is resistant to the processing gas so that it is not corroded by the processing gas and the material is not deteriorated.

  Preferably, the pinch roll has an insulating property.

  When the distance between the two pairs of pinch rolls is shortened, the pinch rolls approach the electrode pair. When the pinch roll has conductivity, abnormal discharge is likely to occur between the electrode pair and the pinch roll. If the pinch roll has insulating properties, abnormal discharge can be prevented.

The plasma processing method and plasma processing apparatus of the present invention are particularly suitable for an open system of 1 Pa or more, particularly a substantially normal pressure (near atmospheric pressure), or a low airtight system, but is not limited thereto. In the present invention, “substantially normal pressure” refers to a range of 1.013 × 10 ^{4 to} 50.663 × 10 ⁴ Pa, and considering the ease of pressure adjustment and the simplification of the apparatus configuration, 1.333 × 10 ^4. ˜10.664 × 10 ⁴ Pa is preferable, and 9.331 × 10 ^{4 to} 10.397 × 10 ⁴ Pa is more preferable.

  The plasma processing method and plasma processing apparatus of the present invention can uniformly and stably process a substrate.

  Examples of the present invention will be described below with reference to FIGS.

  (Example 1) The plasma processing apparatus of Example 1 is demonstrated referring FIG.2 and FIG.3.

  2, two pairs of pinch rolls 14 and 16 that sandwich the base material 18 and rotate in the directions of the arrows 14s and 16s are arranged on both sides of the plasma processing head 12, and the base material 18 is While traveling in the direction of the arrow 18 s, the processing gas 17 flowing out from the opening 13 of the plasma processing head 12 is brought into contact with the substrate 18. In addition, you may provide another pinch roll outside 2 pairs of pinch rolls 14 and 16 (namely, parts other than between pinch rolls 14 and 16).

  The plasma processing head 12 has an opening 13. From the opening 13, a voltage is applied to the opposing electrode pair (not shown), a discharge is generated in the space between the electrode pair, and the process gas 17 is converted into plasma through the space (actually converted into plasma). Or the processing gas 17 activated through plasma may flow out). For example, an alternating voltage or a pulse voltage is applied to the electrode pair to turn the processing gas into plasma. As the form of discharge, glow discharge is preferable for uniform treatment, but corona discharge, dielectric barrier discharge, and creeping discharge may be used.

  The plasma processing head 12 may be provided with an electrode pair inside to convert the processing gas into plasma, or may be supplied with processing gas converted into plasma from the outside and flow out from the opening 12.

  In the plasma processing head 12, notches 12 a and 12 b are formed adjacent to the opening 13. A part of the upper rolls of the pinch rolls 14 and 16 is accommodated in the notches 12a and 12b. Each of the notches 12a and 12b is shaped to fit the pinch rolls 14 and 16 to be accommodated so as not to form a space that disturbs the gas flow.

  As shown in FIG. 3A, the pinch rolls 14 and 16 are in contact with the entire base material 18 in the width direction of the base material 18 (substantially perpendicular to the traveling direction 18s of the base material 2). Alternatively, as shown in FIG. 3B, only a part in the width direction may be contacted. Moreover, you may make it contact in several places. For example, as shown in FIG. 3 (b), two sets of pinch rollers 14a, 14b; 16a, 16b may be disposed at both ends of the base material 18 in the width direction.

  The individual rolls of the two pairs of pinch rolls 14 and 16 are rotated or driven at an appropriate speed so that the base material 18 is not loosened or wrinkled between the two pairs of pinch rolls 14 and 16. Or give it.

  Since the two pairs of pinch rolls 14 and 16 are arranged close to the opening 13, they contact the high-concentration processing gas 17 flowing out from the opening 13. At least the outer peripheral surfaces of the two pairs of pinch rolls 14 and 16 are resistant to the processing gas 17 flowing out from the opening 13. For example, the pinch rolls 14 and 16 are coated with glass, ceramics, fluorine, or the like so that they are not corroded by the processing gas 17 and the material is not deteriorated.

  Furthermore, an insulating material is used for the roll base material of the pinch rolls 14 and 16 so as not to affect the discharge. For example, the pinch rolls 14 and 16 are preferably silicon rolls.

  The base material 18 is a film-like long base material, for example, and is wound up on a roll. It may be a sheet-like substrate that is not wound on a roll.

  Next, the operation when the substrate 18 is subjected to plasma treatment will be described.

  The base material 18 is sandwiched between the two pairs of pinch rolls 14 and 16, and the base material 18 is caused to travel in the direction of the arrow 18s. At this time, the base material 18 is made to travel straightly between the two pairs of pinch rolls 14 and 16, that is, at the shortest distance. Then, the plasma processing gas 17 (whether the processing gas 17 is actually plasma or the processing gas 17 activated through plasma) may flow out from the opening 13 of the plasma processing head 12. Two pairs of pinch rolls 14 and 16 are brought into contact with the base material 18 and plasma treatment such as surface modification, thin film formation, ashing, and cleaning is performed using plasma (active species, ions, etc.) by discharge.

  The processing gas 17 may be selected according to the purpose of the plasma processing. For example, a mixed gas of nitrogen and oxygen is used for the oxidation treatment. Nitrogen and hydrogen are used for the reduction treatment. Fluorocarbon is used for water repellency and etching. An inert gas such as nitrogen or argon may be used as the dilution gas.

  Part of the pinch rolls 14 and 16 is housed in the notches 12a and 12b of the plasma processing head 12, and the distance L2 between the two pairs of pinch rolls 14 and 16 is short, so that the base between the two pairs of pinch rolls 14 and 16 is the same. The material 18 does not sag or wrinkle. If the base material 18 has slack or wrinkles at this portion, the processing becomes unstable or non-uniform. However, since there is no slack or wrinkles, the base material 18 can be treated uniformly and stably. it can. In addition, the processing speed can be improved.

  The distance L2 between the two pairs of pinch rolls 14 and 16 is preferably in the range of 10 mm to 80 mm, and more preferably in the range of 30 mm to 60 mm. The width of the opening 13, the thickness of the dielectric provided on the mutually opposing surfaces of the electrode pair, the outer diameter of the pinch rolls 14, 16, etc. need to be more than a certain size, and therefore between the two pairs of pinch rolls 14, 16. The distance L2 is preferably 10 mm or more, and more preferably 30 mm or more. On the other hand, in order to arrange at least one of the two pairs of pinch rolls 14 and 16 close to the opening 13 of the plasma processing head 12 and prevent the base material 18 from being loosened or wrinkled, two pairs of pinch rolls are used. The distance L2 between 14 and 16 is preferably 80 mm or less, and more preferably 60 mm or less.

  (Example 2) The plasma processing apparatus of Example 2 is demonstrated referring FIG. The plasma processing apparatus according to the second embodiment is configured in substantially the same manner as the plasma processing apparatus according to the first embodiment. In the following description, the same reference numerals are used for the same components as in the first embodiment, and differences from the first embodiment will be mainly described.

  As shown in the configuration diagram of the main part of FIG. 4, two sets of two pairs of pinch rolls 14 and 16 that sandwich the base material 18 and rotate in the directions of the arrows 14 s and 16 s are sandwiched on both sides of the base material 18. Plasma processing heads 22a and 22b are arranged. Each of the plasma processing heads 22a and 22b may be plasma processing gases 27a and 27b (the processing gases 27a and 27b that are actually converted into plasma or the processing gases 27a and 27b that are activated through plasma). The width of the openings 23a and 23b from which the gas flows out is narrow and is tapered. Since the openings 23a and 23b side of each plasma processing head 22a and 22b are tapered, a space is formed in the vicinity of the openings 23a and 23b. By arranging the two pairs of pinch rolls 14 and 16 in this space, the distance L2 between the two pairs of pinch rolls 14 and 16 is reduced, and the base material 18 is slackened between the two pairs of pinch rolls 14 and 16. The base material 18 can be uniformly and stably treated without generating wrinkles. In addition, the processing speed can be improved.

  Using both sets of plasma processing heads 22a and 22b, both surfaces of the substrate 18 can be processed simultaneously. In this case, separate processing can be performed on the front surface and the back surface of the substrate 18 by using the processing gases 27s and 27b having different components for each of the plasma processing heads 22a and 22b.

  The present invention is not limited to the above-described embodiment, and can be implemented with various modifications.

  For example, the plasma processing method and the plasma processing apparatus of the present invention can be performed in an open system or a low airtight system of 1 Pa or more, particularly approximately normal pressure (near atmospheric pressure), but is not limited thereto.

It is explanatory drawing of a plasma processing. (Conventional example) It is a principal part block diagram of a plasma processing. Example 1 It is explanatory drawing of a structure of a pinch roll. Example 1 It is a principal part block diagram of a plasma processing. (Example 2)

Explanation of symbols

12 Plasma processing head 12a, 12b Notch (space)
13 Opening 14 Pinch Roll 16 Pinch Roll 17 Processing Gas 18 Base Material 22a, 22b Plasma Processing Head 23a, 23b Opening 27a, 27b Processing Gas

Claims (6)

A first step of sandwiching the base material between at least two pairs of pinch rolls so that the base material travels between the two pairs of pinch rolls in the shortest distance;
A voltage is applied to the opposing electrode pair in a state where the plasma processing head having an opening is arranged so that the opening faces the substrate between the two pairs of pinch rolls, and a space between the electrode pair A second step of causing discharge to occur, causing the processing gas that has passed through the space to be converted into plasma to flow out of the opening, and bringing the processing gas into contact with the base material traveling between the two pairs of pinch rolls; With
A plasma processing method, wherein a space for arranging at least one of the two pairs of pinch rolls close to the opening is formed adjacent to the opening of the plasma processing head.   The plasma processing method according to claim 1, wherein at least an outer peripheral surface of the pinch roll has resistance to the processing gas flowing out from the opening of the plasma processing head.   The plasma processing method according to claim 1, wherein the pinch roll has an insulating property. A plasma processing head having an opening through which a voltage is applied to the opposing electrode pair, a discharge is generated in the space between the electrode pair, and the processing gas converted into plasma through the space flows out;
Comprising at least two pairs of pinch rolls that sandwich the substrate to travel;
The opening of the plasma processing head is opposed to the base material traveling between the two pairs of pinch rolls between the two pairs of pinch rolls, and the processing gas flowing out of the openings is passed through the two pairs of pinch rolls. In the plasma processing apparatus, which is brought into contact with the base material traveling between rolls,
A plasma processing apparatus having a space for arranging at least one of the two pairs of pinch rolls close to the opening adjacent to the opening of the plasma processing head.   The plasma processing apparatus according to claim 4, wherein at least an outer peripheral surface of the pinch roll has resistance to the processing gas flowing out from the opening of the plasma processing head.   The plasma processing apparatus according to claim 4, wherein the pinch roll has an insulating property.

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