JP2006307308A - Method for forming metallic film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for forming a metallic film by which the sticking of metal atoms caused by sputtering from the metallic films deposited on the surface of a conveying plate during the plasma treatment even when the same conveying plate is used repeatedly in the case of applying a plasma treatment to a substrate in a state being arranged on the conveying plate, applying a film deposition treatment of successively depositing metallic films of two or more layers by a physical vapor deposition process, and then forming the metallic film on the surface of the substrate. <P>SOLUTION: The method for forming the metallic film comprises: a stage where a carrying stand 2 composed of a conductor and holding athe substrate 1 is arranged on a holding electrode 3 for plasma treatment, and voltage is applied to the space between the holding electrode 3 and a counter electrode 4, thus the surface of the substrate 1 is subjected to plasma treatment; and a stage where, under a state in which the substrate 1 is held to the carrying stand 2, metallic films 7 of two or more layers are successively formed on the substrate 1 by a physical vapor deposition process. Shielding bodies 8 of shielding parts at which the substrate 1 is not arranged on the carrying stand 2 are disposed between the carrying stand 2 and the counter electrode 4 in the stage where plasma treatment is performed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a technique for forming a metal film on the surface of a substrate such as a resin molded body or a ceramic molded body.

  A three-dimensional wiring board (MID) is applied to an electronic / optoelectronic device or the like that is required to be small and light. Such a three-dimensional wiring board, or a sensor component, a light reflecting plate, etc. are produced by injection molding or the like of a resin composition or a ceramic composition to produce a base material 1 made of a resin molded body or a ceramic molded body. It is manufactured by forming a metal film 7 to be a wiring or a reflective film on the surface of the substrate 1.

  As a method for forming such a metal film 7, a PVD method (physical vapor deposition method) such as sputtering has been conventionally applied (see Patent Document 1).

  FIG. 7 schematically shows an example of the formation process of the metal film 7, and a charging chamber 20 for preheating the base material 1 and plasma for performing plasma processing such as nitrogen plasma processing on the base material 1. In order to take out the processing chamber 21, the film forming chamber 22 for forming the metal film 7 on the plasma-treated base material 1 by a physical vapor deposition method such as sputtering, and the base material 1 on which the metal film 7 is formed. And a take-out chamber 23. In the illustrated example, a first film forming chamber 22a using a first target 6a made of chromium, titanium or the like as a target 6 is provided as a film forming chamber 22 in the previous stage, and a second film made of copper or the like is used as a target 6 in the rear stage. A second film formation chamber 22b using the target 6b is provided, whereby an intermediate film made of a chromium film or the like is formed as a metal film 7 for improving adhesion, and then a surface film made of a copper film or the like is formed. It comes to form. The substrate 1 is transported through each processing chamber and sequentially processed.

  In the process of forming the metal film 7 as described above, each process is performed in a state where the base material 1 is held on the transport base 2 made of a conductor for the convenience of transporting the base material 1 between a plurality of processing steps. It has been done.

  That is, in the step of performing the plasma treatment on the base material 1, for example, as shown in FIG. 8A, the base material 1 is introduced into the plasma processing chamber 21 while being held by the transport base 2, and the transport base 2 is held by the holding electrode 3. A high-frequency voltage is applied to the holding electrode 3 by a high-frequency power source 25 in a state where nitrogen gas or the like is introduced into the plasma processing chamber 21 while being placed on and connected to the holding electrode 3 to perform plasma processing. At this time, an RF discharge is generated between the holding electrode 3 and the counter electrode 4 opposed to the holding electrode 3 to generate a plasma P1 such as nitrogen plasma by a gas discharge phenomenon, and ions such as nitrogen ions 27 in the plasma P1 are formed on the substrate. While cleaning is performed by acting on the surface of 1, polar groups such as nitrogen polar groups are imparted to molecules on the surface of the substrate 1.

Further, in the step of performing the film forming process on the substrate 1 after the plasma treatment, for example, as shown in FIG. 8B, the substrate 1 is introduced into the film forming chamber 22 while being held on the transfer table 2, and the transfer table 2 is placed on the holding electrode 5 to be electrically connected to the holding electrode 5, and a DC voltage is applied from the DC power source 26 to the target 6 facing the holding electrode 5 in a state where argon gas or the like is introduced into the film forming chamber 22. Sputtering is performed. At this time, a DC discharge is generated between the holding electrode 5 and the target 6, and a plasma P 2 such as argon plasma is generated by a gas discharge phenomenon, and ions such as argon ions 28 in the plasma P 2 act on the surface of the target 6. Then, metal atoms constituting the target 6 are blown off and deposited on the surface of the substrate 1 to form the metal film 7.
JP 2003-0773802 A

  However, when the metal film 7 is formed on the substrate 1 as described above, metal atoms may be deposited not only on the surface of the substrate 1 but also on the surface of the transport table 2 in the film forming process. For this reason, when the metal film 7 is formed on the substrate 1 by repeatedly using the same transport table 2, the metal layer 11 may be formed on the surface of the transport table 2.

  When the metal film 7 is formed on the substrate 1 using the carrier 2 having such a metal layer 11 formed, ions such as nitrogen ions 27 in the plasma P1 are generated in the metal layer 11 during the plasma processing. 8A, metal atoms may be blown off from the metal layer 11 and deposited on the surface of the substrate 1 as shown in FIG. As described above, when metal atoms are deposited on the surface of the substrate 1 during the plasma treatment, particularly when two or more metal films composed of an intermediate film or a surface film are formed as described above, If copper atoms or the like constituting the surface layer film are previously released from the metal layer 11 during the plasma treatment and are deposited on the base material 1, there is a possibility that the effect of improving the adhesion due to the intermediate film may not be sufficiently obtained. Further, when an alloy film such as a chromium-copper alloy is formed on the substrate 1 as the metal film 7, an alloy that forms the metal film 11 by unintentional sputtering of the metal film 11 on the carrier 2 during the plasma processing. There is also a possibility that only a metal having poor adhesion to the base material 1 such as copper in the inside may be deposited on the base material 1, and in this case, the adhesion between the base material 1 and the metal film 7 made of an alloy film is sufficient. There is a risk that it will not be possible to obtain.

  The present invention has been made in view of the above points, and is based on a plasma treatment and a film formation process in which a metal film is formed by physical vapor deposition in a state where a base material is placed on a transfer table. When forming the metal film on the surface of the material, the metal atoms released by sputtering from the metal film deposited on the surface of the transfer table during the plasma treatment adhere to the substrate surface even if the same transfer table is used repeatedly. It is an object of the present invention to provide a method for forming a metal film that can be suppressed.

  In the metal film forming method according to the present invention, a carrier 2 made of a conductor holding a substrate 1 is disposed on a holding electrode 3 for plasma processing, and a voltage is applied between the holding electrode 3 and the counter electrode 4. The metal film 7 is formed on the base material 1 by a physical vapor deposition method in a state in which the surface of the base material 1 is subjected to plasma treatment and the base material 1 is held on the carrier 2. A shielding body 8 that shields a portion of the transport table 2 where the substrate 1 is not disposed between the transport table 2 and the counter electrode 3 in the step of performing the plasma treatment. It is characterized by doing. In this case, when performing the processing repeatedly using the same transport table 2, the substrate 1 is subjected to plasma processing in a state where the metal layer 11 is formed on the surface of the transport table 2 by the previous film formation process, Even if the metal atoms constituting the metal layer 11 are blown off by sputtering, the metal atoms are shielded by the shield 8 and the metal atoms released from the metal film 11 are deposited on the surface of the substrate 1 during the plasma treatment. Is suppressed.

  In the metal film forming method, an extension 9 that extends toward the carrier 2 may be provided at the edge of the shield 8 on the base 1 side. If it does in this way, a metal atom can be further shielded by the extension part 9, and it suppresses more reliably that the metal atom discharge | released from the metal film 11 accumulates on the surface of the base material 1 during a plasma process. Can do.

  Moreover, when providing the extension part 9, it is preferable to form the edge part 9a by the side of the conveyance stand 2 of this extension part 9 in the shape of a curved surface. In this way, the concentration of the electric field at the edge 9a can be suppressed to suppress the occurrence of arc discharge, and damage to the base material 1, the carriage 2, the shield 8 and the like due to the arc can be suppressed.

  Further, a positive bias can be applied to the shield 8 as described above. In this way, ions in the plasma P1 can be prevented from colliding with the shield 8 during the plasma treatment, and atoms constituting the shield 8 are repelled by sputtering and deposited on the substrate 1. Can be suppressed.

  It is also preferable to form a metal oxide coating 10 on the surface of the shield 8 as described above. In this way, atoms are less likely to be blown off by sputtering from the metal oxide coating 10 having a low etch rate, whereby the atoms constituting the shield 8 are blown off by sputtering and deposited on the substrate 1. Can be suppressed.

  Further, as the shield 8 as described above, a device that also serves as a target for forming the metal film 7 by sputtering can be provided and a negative bias can be applied to the shield 8. If it does in this way, the ion in plasma P1 will collide with the shielding body 8 during plasma processing, the metal atom which comprises the shielding body 8 will be blown off, and it will deposit on the base material 1, and metal film will be simultaneous with plasma processing. 7 can be formed.

  Thus, when using what also serves as a target for forming the metal film 7 as the shield 8, it is also preferable that the shield 8 has the same potential as that of the carrier 2. In this way, it is possible to prevent a discharge from occurring between the shield 8 and the carriage 2 and to suppress the release of metal atoms from the metal layer 11 on the surface of the carriage 2 due to the discharge. Further, it is possible to more reliably suppress the metal atoms released from the metal film 11 from being deposited on the surface of the substrate 1 during the plasma processing.

  According to the present invention, even when a metal film is formed on a substrate by repeatedly using the same carrier table, metal atoms on the carrier table are prevented from adhering to the surface of the substrate during plasma processing. Even if the metal film is repeatedly formed on the base material using the same carrier, the adhesion between the base material and the metal film can be maintained sufficiently high.

  In particular, when forming a surface layer film such as a copper film after forming an intermediate film made of a chromium film, a titanium film, or an alloy film of copper and the like to improve adhesion as a metal film, the intermediate film Before plasma formation, metal atoms such as copper atoms constituting the surface layer film are released from the metal layer on the carrier during the plasma treatment and deposited on the base material, and the effect of improving the adhesion by the intermediate film is reduced. In addition, even when only an alloy film such as a chromium-copper alloy is formed as a metal film on the base material, an alloy that forms the metal film by unintentional sputtering of the metal film on the carrier during the plasma treatment In this case, it is possible to prevent only a metal having poor adhesion to the base material, such as copper, from being deposited on the base material. In this case as well, sufficient adhesion between the base material and the metal film made of the alloy film can be obtained. It can be obtained.

  Hereinafter, the best mode for carrying out the present invention will be described.

  Examples of the substrate 1 include a three-dimensional wiring board (MID: Molded Interconnect Device) in which a thermoplastic resin such as a polyamide-based resin as shown in FIG. 6A is molded, but is not limited thereto. Alternatively, a ceramic substrate or other appropriate material can be used. In addition, the metal film 7 can be formed for wiring processing, the formation of a light reflection plate, etc., but the present invention is not limited to this but can be applied to form the metal film 7 for an appropriate purpose. it can.

  The formation process of the metal film 7 on the base material 1 shown in FIG. 7 includes a preparation chamber 20 for preheating the base material 1 and a plasma processing chamber 21 for subjecting the base material 1 to high-frequency plasma processing such as nitrogen plasma processing. And a film forming chamber 22 for forming the metal film 7 on the plasma-treated base material 1 by physical vapor deposition, and an extraction chamber 23 for taking out the base material 1 on which the metal film 7 is formed. It is configured. In the illustrated example, a film forming chamber 22 for forming the metal film 7 by sputtering is provided, and a first film forming chamber 22a using a first target 6a made of chromium or the like as the target 6 is provided in the previous stage. The second film forming chambers 22b using the second target 6b made of copper or the like as the target 6 are provided in the subsequent stage. The base material 1 is transported in a state where each processing chamber is held on the transport base 2, and a metal film 7 is formed by sequentially performing processing as described below.

  The base material 1 is first introduced into the preparation chamber 20 while being held by a carrier 2 formed of a conductor such as stainless steel (SUS), and is subjected to appropriate conditions such as 180 at 150 ° C. with a halogen lamp 24 or the like. Preheated for 2 seconds. In addition, the material of the conveyance stand 2 is not restricted to the said SUS, It can form with a suitable conductor.

  Next, the base material 1 is introduced into the plasma processing chamber 21 while being held on the transport table 2. The plasma processing chamber 21 is constituted by a high-frequency plasma processing apparatus or the like, and the holding electrode 3 and the counter electrode 4 are disposed in the chamber 29 so as to face each other. The holding electrode 3 is connected to the high-frequency power source 25 and the high-frequency power source 25 is biased. A negative bias is applied to the holding electrode 3 by, for example, grounding via a power source 32 for the use, and the counter electrode 4 is grounded by connecting to the chamber 29. The atmospheric gas can be introduced. Then, the carrier 2 is placed on the holding electrode 3 and held in a state in which the holding electrode 3 and the carrier 2 are electrically connected to each other and set in the chamber 29. In the chamber 29, an atmosphere such as nitrogen gas or argon gas is provided. By introducing a gas and reducing the pressure (eg, 10 Pa), applying an appropriate high-frequency voltage (eg, RF 700 W for 180 seconds) to the holding electrode 3 and applying a negative bias to the holding electrode 3 side, An RF discharge is generated between the counter electrodes 4 to generate a plasma P1 such as nitrogen plasma by a gas discharge phenomenon. When the plasma P1 is generated in this way, ions such as nitrogen ions 27 in the plasma P1 act on the surface of the base material 1 to perform cleaning to remove contaminants on the surface of the base material 1, and also polar nitrogen groups and the like. The polar group is imparted to molecules on the surface of the substrate 1.

  After the plasma treatment is performed on the base material 1 in this way, the base material 1 is introduced into the film forming chamber 22 while being held on the transport table 2.

In the film forming chamber 22, the holding electrode 5 and the target 6 are disposed in the chamber 30 so as to face each other with an appropriate interval (for example, 60 to 70 mm), and the holding electrode 5 is connected to the chamber 30 and grounded. In addition, the negative electrode side of the DC power source 26 is connected to the target 6 and the positive electrode side is connected to the chamber 30 and grounded, and the atmosphere gas for sputtering can be introduced into the chamber 30. In the illustrated example, a first film forming chamber 22a and a second film forming chamber 22b are provided as the film forming chamber 22, and the first film forming chamber 22a faces the holding electrode 5a in the chamber 30a. The first target 6a made of chromium or the like connected to the DC power source 26a is provided, and the second film forming chamber 22b is made of copper or the like connected to the DC power source 26b in the chamber 30b so as to face the holding electrode 5b. A second target 6b is provided. And it hold | maintains in the state which has arrange | positioned the conveyance stand 2 on the holding electrode 5, sets in the chamber 30, introduce | transduces atmospheric gas, such as argon gas, into the chamber 30, and is a pressure reduction state (for example, 1-5 * 10 < ^- >). ³ Pa), and a DC voltage (for example, 3 to 4 kW) is applied to the target 6 to generate a DC discharge between the holding electrode 5 and the target 6, and a plasma P2 such as argon plasma is generated by a gas discharge phenomenon. Let When the plasma P2 is generated in this way, ions such as argon ions 28 in the plasma P2 act on the surface of the target 6, and metal atoms constituting the target 6 are blown off and deposited on the surface of the substrate 1. A metal film 7 is formed (see FIG. 8B). At this time, the base film 1 is sequentially sputtered in the first film forming chamber 22a and the second film forming chamber 22b, whereby an intermediate film 7a (for example, a film) made of a chromium film is formed as the first metal film 7. (See FIG. 6B), and then a surface layer 7b (for example, a film thickness of 300 nm) made of a copper film is formed as the second metal film 7 (see FIG. 6D). . The configuration of the film forming chamber 22 is not limited to this, and for example, only one film forming chamber 22 including the target 6 made of chromium-copper alloy or titanium-copper alloy, or the target 6 and copper made of chromium, titanium, or the like. A single-layer metal film 7 made of chromium-copper alloy, titanium-copper alloy, or the like is formed only in one film forming chamber 22 provided with a target 6 made of the second target 6b. It is composed of an intermediate film 7a made of a titanium film or the like and a surface layer 7b made of a copper film using a thing made of titanium, made of a chromium-copper alloy, made of a titanium-copper alloy, etc. The metal layer 7 can be formed, or three or more film forming chambers 22 can be provided to form the three or more metal films 7. A target made of an appropriate metal according to the configuration of the desired metal film 7 With 6 Processing can be carried out in Yibin of the number of the deposition chamber 22.

  Next, the carrier 2 holding the base material 1 is taken out from the take-out chamber 23, and then when the base material 1 is formed as a wiring board, wiring processing is performed as necessary. At this time, for example, as shown in FIG. 6 (d), an electromagnetic wave such as a laser corresponding to the pattern of the non-wiring forming portion at least in the boundary region between the wiring forming portion and the non-wiring forming portion on the metal film 7 on the substrate 1. The portion of the metal film 7 that has been irradiated with an electromagnetic wave such as a laser is removed leaving the non-irradiated portion, and then the surface of the metal film 7 in the non-irradiated portion is electrolyzed as shown in FIG. As shown in FIG. 6F, the conductor wiring 31 is formed by plating or the like, and the metal film 7 remaining in the non-wiring forming portion is removed by etching or the like as necessary. A simple wiring board can be manufactured.

  In forming the metal film 7 on the base material 1 as described above, in the present invention, in the step of performing plasma treatment on the surface of the base material 1, the top surface of the transport base 2 is placed between the transport base 2 and the counter electrode 4. A shielding body 8 that shields a portion where the base material 1 is not disposed is disposed.

  In the example shown in FIG. 1A, the shield 8 is disposed on the counter electrode 4 side with a gap with respect to the transport table 2. The shield 8 is not provided between the base material 1 and the counter electrode 4 so that the base material 1 is exposed to the counter electrode 4. The shield 8 may be fixedly provided in the chamber 29 or may be provided on the transport table 2. Further, it may be detachably provided in the chamber 29 or the transfer table 2. Further, in the illustrated example, the shield 8 is grounded by being connected to the chamber 29 or the like. At this time, when the shield 8 is provided on the transport table 2, the shield 8 and the transport table 2 are insulated. Like that.

  When such a shield 8 is provided, the metal layer 11 is formed on the surface of the carrier 2 during the plasma processing, and ions such as nitrogen ions 27 in the plasma P1 reach the metal layer 11 during the plasma processing. Even if metal atoms are blown off from the metal layer 11, the metal atoms are shielded by the shield 8 before reaching the base material 1, and the metal atoms are prevented from being deposited on the base material 1. It is something that can be done.

  The shield 8 can be formed of a conductor such as SUS. At this time, a metal oxide coating 10 such as quartz glass or alumina may be formed on the surface of the shield 8 as shown in FIG. In this way, by forming the metal oxide coating 10 having a low etch rate on the surface of the shield 8, when ions such as nitrogen ions 27 in the plasma P <b> 1 reach the surface of the shield 8, the shield 8 is It is possible to prevent the constituent metal atoms from being blown off and deposited on the surface of the substrate 1.

  At this time, the distance between the shield 8 and the transport table 2 is preferably 5 mm or less. In this way, even if a potential difference is generated between the shield 8 and the carrier 2, electrons moving between them are not easily accelerated to the extent necessary for plasma generation. Can be further suppressed.

  Moreover, as shown to Fig.2 (a), you may make it provide the extension part 9 extended toward the conveyance stand 2 side at the edge by the side of the base material 1 of the shielding body 8. FIG. When such an extension portion 9 is provided, even if metal atoms released from the metal layer 11 on the surface of the transport table 2 try to pass between the transport table 2 and the shield 8 toward the base material 1, Such metal atoms can be shielded by the extending portion 9, whereby the adhesion of metal atoms to the substrate 1 can be further suppressed.

  When providing such an extension part 9, it is preferable to form the edge 9a by the side of the conveyance stand 2 of the extension part 9 in the shape of a curved surface as shown in FIG.2 (b). If it does in this way, electric field concentration in the edge of extension part 9 will be controlled, and it will prevent that arc discharge generate | occur | produces by this and can prevent damage to substrate 1, conveyance stand 2, shield 8, etc. It can be done.

  Further, a positive bias may be applied to the shield 8 as shown in FIG. In the illustrated example, a positive electrode of a bias power source 33 is connected to the shield 8, and a negative electrode of the power source 33 is grounded by being connected to the chamber 29. At this time, the bias voltage applied to the shield 8 can be set to 10 to 30 V, for example. In this way, cations such as nitrogen ions 27 in the plasma P1 can be prevented from colliding with the shield 8, and sputtering occurs on the surface of the shield 8 so that atoms constituting the shield 8 are based on the atoms. It is also possible to prevent the occurrence of a situation in which the material 1 is bounced off and accumulated.

  In addition, as shown in FIG. 4, as the shield 8, a material that also serves as a target for forming the metal film 7 can be provided. At this time, the shield 8 can be made of an appropriate metal depending on the desired material of the intermediate film 7a. For example, a shield 8 made of chromium, titanium, an alloy of these and copper, or the like is provided. .

  At this time, a negative bias is applied to the shield 8. In the illustrated example, the negative electrode of the bias power supply 33 is connected to the shield 8 and the negative electrode of the power supply 33 is connected to the chamber 29. Etc. are grounded. At this time, the bias voltage applied to the shield 8 can be set to 10 to 30 V, for example.

  When plasma processing is performed using such a shield 8, ions such as nitrogen ions 27 in the plasma P <b> 1 collide with the shield 8 with a negative bias, and thereby metal atoms constituting the shield 8 fly off. And adhere to the substrate 1. For this reason, the metal film 7 can be formed by sputtering at the same time as the substrate 1 is cleaned by plasma treatment or the like.

  When providing the shielding body 8 that also serves as a target for forming such a metal film 7, when forming two or more layers as the metal film 7, the film forming chamber 22 is a first layer of metal. It is possible to omit the one for forming the film 7 and provide only the film formation chamber 22 for forming the second and subsequent metal films 7, and to form the metal film 7 composed of only one layer. In this case, the film forming chamber 22 may be omitted, and the metal film 7 formed by physical vapor deposition may be formed simultaneously with the plasma treatment.

  Moreover, when providing the shielding body 8 that also serves as the target of the metal film 7, it is preferable that the shielding body 8 and the transport base 2 (and the holding electrode 3) have the same potential. For example, in the example shown in FIG. 5, the transport table 2 and the shield 8 are electrically connected to each other through the conductive member 12 so that the transport table 2 and the shield 8 have the same potential. 3 may be made conductive, and the shield 8 and the holding electrode 3 may be connected in parallel to the high-frequency power source 25. In this way, since the shield 8 has the same potential as the negatively biased holding electrode 3, ions such as nitrogen ions 27 in the plasma P1 are shielded by the negative bias as in the case shown in FIG. Colliding with the body 8, the metal atoms constituting the shield 8 are blown off and adhere to the substrate 1. For this reason, the metal film 7 can be formed by sputtering at the same time as the substrate 1 is cleaned by plasma treatment or the like. Further, when the shield 8 and the transport table 2 are set to the same potential, no discharge occurs between the shield 8 and the transport table 2, and the metal from the metal layer 11 on the surface of the transport table 2 is caused by the discharge. Generation | occurrence | production of discharge | release of an atom can be suppressed and it can further suppress that such a metal atom adheres to the base material 1. FIG.

(A) is the schematic which shows an example of the process which performs a plasma process with respect to a base material, (b) is the one part schematic which shows the said other example. (A) and (b) are some schematic diagrams which show the further another example of the process of performing a plasma process with respect to the base material same as the above. It is the schematic which shows the further another example of the process of performing a plasma process with respect to a base material same as the above. It is the schematic which shows the further another example of the process of performing a plasma process with respect to a base material same as the above. It is the schematic which shows the further another example of the process of performing a plasma process with respect to a base material same as the above. An example of embodiment of this invention is shown and (a) thru | or (f) is sectional drawing which shows a base material. It is the schematic which shows an example of the whole structure of embodiment of this invention. It shows an example of a prior art, (a) is a schematic diagram showing a step of performing a plasma treatment on a substrate, and (b) is a schematic diagram showing a step of performing a film forming treatment on the substrate. .

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Base material 2 Carriage 3 Holding electrode 4 Counter electrode 7 Metal film 8 Shielding body 9 Extension part 9a Edge 10 Metal oxide coating

Claims (7)

  A step of placing a carrier made of a conductor holding a base material on a holding electrode for plasma processing and applying a voltage between the holding electrode and the counter electrode to subject the surface of the base material to plasma processing; And forming a metal film on the base material by physical vapor deposition while holding the base material on the transport base, and in the step of performing the plasma treatment, the transport base and the counter electrode In the meantime, a metal film forming method is provided, wherein a shielding body for shielding a portion where the base material on the transport table is not disposed is disposed.   2. The metal film forming method according to claim 1, wherein an extension portion extending toward the carrier table side is provided at an edge portion on the base material side of the shielding body.   The metal film forming method according to claim 2, wherein an edge portion of the extending portion on the transport table side is formed in a curved surface shape.   4. The metal film forming method according to claim 1, wherein a positive bias is applied to the shield.   5. The metal film forming method according to claim 1, wherein a metal oxide coating is formed on the surface of the shield.   The metal film formation according to any one of claims 1 to 3, characterized in that, as the shielding body, a thing that also serves as a target for forming a metal film by sputtering is provided and a negative bias is applied to the shielding body. Method.   The metal film forming method according to claim 6, wherein the shield has the same potential as that of the transport table.

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