JP2006307182A5 - - Google Patents
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- JP2006307182A5 JP2006307182A5 JP2006086850A JP2006086850A JP2006307182A5 JP 2006307182 A5 JP2006307182 A5 JP 2006307182A5 JP 2006086850 A JP2006086850 A JP 2006086850A JP 2006086850 A JP2006086850 A JP 2006086850A JP 2006307182 A5 JP2006307182 A5 JP 2006307182A5
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- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 229910052693 Europium Inorganic materials 0.000 claims description 11
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 8
- 229910052691 Erbium Inorganic materials 0.000 claims description 8
- 229910052689 Holmium Inorganic materials 0.000 claims description 8
- 229910052779 Neodymium Inorganic materials 0.000 claims description 8
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 8
- 229910052772 Samarium Inorganic materials 0.000 claims description 8
- 229910052771 Terbium Inorganic materials 0.000 claims description 8
- 229910052775 Thulium Inorganic materials 0.000 claims description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 6
- 239000012190 activator Substances 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000003213 activating Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 description 1
Description
(1) 励起光源と、該励起光源からの光の少なくとも一部を波長変換する蛍光体とを有する発光装置において、該励起光源が、300nm以上、500nm以下のピーク発光波長を有する発光ダイオードであり、該蛍光体として、付活元素M 1 と、2価の金属元素M 2 と、少なくともSiを含む4価の金属元素M 4 とを含み、かつ、合金を、窒素含有雰囲気下で加熱し、窒化することにより得られた蛍光体(以下、「第1の蛍光体」とする。)を含有することを特徴とする発光装置。
(2) (1)において、前記第1の蛍光体が、2価の金属元素M 2 としてアルカリ土類金属元素を含むことを特徴とする発光装置。
(3) (1)又は(2)において、前記第1の蛍光体が、さらに3価の金属元素M 3 を含むことを特徴とする発光装置。
(4) (1)ないし(3)のいずれかにおいて、前記第1の蛍光体が、付活元素M 1 としてEu及び/又はCeを含み、2価の金属元素M 2 がCa及び/又はSrを含み、3価の金属元素M 3 がAlを含み、4価の金属元素M 4 としてSiを含むことを特徴とする発光装置。
(5) (1)ないし(4)のいずれかにおいて、前記第1の蛍光体が下記一般式[1]で表されることを特徴とする発光装置。
M 1 a M 2 b M 3 c M 4 d N e O f [1]
(但し、M 1 は、Cr、Mn、Fe、Ce、Pr、Nd、Sm、Eu、Tb、Dy、Ho、Er、Tm、及びYbよりなる群から選ばれる1種以上の元素であり、
M 2 は、Mg、Ca、Sr、Ba、及びZnよりなる群から選ばれる1種以上の元素であり、
M 3 は、Al、Ga、In、及びScよりなる群から選ばれる1種以上の元素であり、
M 4 は、Siを必須とする、Si、Ge、Sn、Ti、Zr、及びHfよりなる群から選ばれる1種以上の元素である。
a、b、c、d、e、fはそれぞれ下記の範囲の値である。
0.00001≦a≦0.15
a+b=1
0.5≦c≦1.5
0.5≦d≦1.5
2.5≦e≦3.5
0≦f≦0.5 )
(6) (5)において、前記第1の蛍光体が下記一般式[2]で表されることを特徴とする発光装置。
M 1’ a’ Sr b’ Ca c’ M 2’ d’ Al e’ Si f’ N g’ [2]
(但し、M 1’ は、Cr、Mn、Fe、Ce、Pr、Nd、Sm、Eu、Tb、Dy、Ho、Er、Tm及びYbからなる群から選ばれる1種以上の元素であり、
M 2’ は、Mg及び/又はBaである。
a’、b’、c’、d’、e’、f’、g’はそれぞれ下記の範囲の値である。
0.00001≦a’≦0.15
0.1≦b’≦0.99999
0≦c’<1
0≦d’<1
a’+b’+c’+d’=1
0.5≦e’≦1.5
0.5≦f’≦1.5
0.8×(2/3+e’+4/3×f’)≦g’≦1.2×(2/3+e’+4/3×f’))
(7) (6)において、一般式[2]におけるb’の値が、0.6≦b’≦0.99999の範囲であり、かつ、d’=0であることを特徴とする発光装置。
(8) (1)ないし(7)のいずれかにおいて、前記合金が、付活元素M 1 と、2価の金属元素M 2 と、少なくともSiを含む4価の金属元素M 4 とを含むことを特徴とする発光装置。
(9) (1)ないし(8)のいずれかにおいて、前記蛍光体として、前記第1の蛍光体とは発光波長の異なる第2の蛍光体を含有することを特徴とする発光装置。
(10) (9)において、前記第2の蛍光体として、ピーク波長を、490nm以上、570nm以下の波長範囲に有する緑色蛍光体を含有することを特徴とする発光装置。
(11) (10)において、前記緑色蛍光体として、(Ba,Sr,Ca,Mg) 2 SiO 4 :Eu、Ca 3 (Sc,Mg,Na,Li) 2 Si 3 O 12 :Ce、CaSc 2 O 4 :Ce、Eu付活βサイアロン、Eu付活αサイアロン、及びBaMgAl 10 O 17 :Eu,Mnからなる群から選ばれる少なくとも1種以上を含有することを特徴とする発光装置。
(12) (9)ないし(11)のいずれかにおいて、前記第2の蛍光体として、ピーク波長を、420nm以上、480nm以下の波長範囲に有する青色蛍光体を含有することを特徴とする発光装置。
(13) 下記一般式[2]で表されることを特徴とする蛍光体。
M 1’ a’ Sr b’ Ca c’ M 2’ d’ Al e’ Si f’ N g’ [2]
(但し、M 1’ は、Cr、Mn、Fe、Ce、Pr、Nd、Sm、Eu、Tb、Dy、Ho、Er、Tm及びYbからなる群から選ばれる1種以上の元素であり、
M 2’ は、Mg及び/又はBaである。
a’、b’、c’、d’、e’、f’、g’はそれぞれ下記の範囲の値である。
0.00001≦a’≦0.15
0.1≦b’≦0.99999
0≦c’<1
0≦d’<1
a’+b’+c’+d’=1
0.5≦e’≦1.5
0.5≦f’≦1.5
0.8×(2/3+e’+4/3×f’)≦g’≦1.2×(2/3+e’+4/3×f’))
(14) (13)において、酸素の含有量が5重量%以下であることを特徴とする蛍光体。
(15) 下記一般式[2]で表される蛍光体の製造方法であり、酸素濃度1000ppm以下の窒素含有雰囲気下で、圧力を10MPaから200MPa、温度を800℃以上、2200℃以下として、1分以上、24時間以下加熱することにより、窒化を行うことを特徴とする蛍光体の製造方法。
M 1’ a’ Sr b’ Ca c’ M 2’ d’ Al e’ Si f’ N g’ [2]
(但し、M 1’ は、Cr、Mn、Fe、Ce、Pr、Nd、Sm、Eu、Tb、Dy、Ho、Er、Tm及びYbからなる群から選ばれる1種以上の元素であり、
M 2’ は、Mg及び/又はBaである。
a’、b’、c’、d’、e’、f’、g’はそれぞれ下記の範囲の値である。
0.00001≦a’≦0.15
0.1≦b’≦0.99999
0≦c’<1
0≦d’<1
a’+b’+c’+d’=1
0.5≦e’≦1.5
0.5≦f’≦1.5
0.8×(2/3+e’+4/3×f’)≦g’≦1.2×(2/3+e’+4/3×f’))
(1) In a light emitting device having an excitation light source and a phosphor that converts the wavelength of at least part of light from the excitation light source, the excitation light source is a light emitting diode having a peak emission wavelength of 300 nm to 500 nm. as the phosphor, the activator elements M 1, divalent metal elements M 2, and a tetravalent metal elements M 4 including at least Si, and the alloy is heated in a nitrogen containing atmosphere, A light emitting device comprising a phosphor obtained by nitriding (hereinafter referred to as “first phosphor”).
(2) In (1), the first phosphor, the light emitting device characterized by comprising an alkaline earth metal element as the divalent metal elements M 2.
(3) (1) or (2), the first phosphor, further light-emitting device which comprises a trivalent metal element M 3.
In any one of (4) (1) to (3), wherein the first phosphor comprises a Eu and / or Ce as activator elements M 1, 2 divalent metal elements M 2 is Ca and / or Sr And a trivalent metal element M 3 containing Al, and a tetravalent metal element M 4 containing Si.
(5) In any one of (1) to (4), the first phosphor is represented by the following general formula [1].
M 1 a M 2 b M 3 c M 4 d N e O f [1]
(Wherein, M 1 is, Cr, Mn, Fe, Ce , Pr, Nd, Sm, Eu, Tb, Dy, Ho, at least one element selected Er, Tm, and from the group consisting of Yb,
M 2 is one or more elements selected from the group consisting of Mg, Ca, Sr, Ba, and Zn,
M 3 is one or more elements selected from the group consisting of Al, Ga, In, and Sc;
M 4 is at least one element selected from the group consisting of Si, Ge, Sn, Ti, Zr, and Hf, which essentially requires Si.
a, b, c, d, e, and f are values in the following ranges, respectively.
0.00001 ≦ a ≦ 0.15
a + b = 1
0.5 ≦ c ≦ 1.5
0.5 ≦ d ≦ 1.5
2.5 ≦ e ≦ 3.5
0 ≦ f ≦ 0.5)
(6) The light-emitting device according to ( 5), wherein the first phosphor is represented by the following general formula [2].
M 1 ′ a ′ Sr b ′ Ca c ′ M 2 ′ d ′ Al e ′ Sif ′ N g ′ [2]
(However, M 1 ′ is one or more elements selected from the group consisting of Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.
M 2 ′ is Mg and / or Ba.
a ′, b ′, c ′, d ′, e ′, f ′, and g ′ each have a value within the following range.
0.00001 ≦ a ′ ≦ 0.15
0.1 ≦ b ′ ≦ 0.99999
0 ≦ c ′ <1
0 ≦ d ′ <1
a ′ + b ′ + c ′ + d ′ = 1
0.5 ≦ e ′ ≦ 1.5
0.5 ≦ f ′ ≦ 1.5
0.8 × (2/3 + e ′ + 4/3 × f ′) ≦ g ′ ≦ 1.2 × (2/3 + e ′ + 4/3 × f ′))
(7) In (6), the value of b ′ in the general formula [2] is in the range of 0.6 ≦ b ′ ≦ 0.99999, and d ′ = 0. .
In any one of (8) (1) to (7), wherein the alloy is an activator elements M 1, divalent metal elements M 2, include a tetravalent metal elements M 4 including at least Si A light emitting device characterized by the above.
(9) The light emitting device according to any one of (1) to (8), wherein the phosphor includes a second phosphor having a light emission wavelength different from that of the first phosphor.
(10) The light emitting device according to (9), wherein the second phosphor includes a green phosphor having a peak wavelength in a wavelength range of 490 nm or more and 570 nm or less.
(11) In (10), as the green phosphor, (Ba, Sr, Ca, Mg) 2 SiO 4 : Eu, Ca 3 (Sc, Mg, Na, Li) 2 Si 3 O 12 : Ce, CaSc 2 A light emitting device comprising at least one selected from the group consisting of O 4 : Ce, Eu activated β sialon, Eu activated α sialon, and BaMgAl 10 O 17 : Eu, Mn.
(12) In any one of (9) to (11), the second phosphor contains a blue phosphor having a peak wavelength in a wavelength range of 420 nm or more and 480 nm or less. .
(13) A phosphor represented by the following general formula [2].
M 1 ′ a ′ Sr b ′ Ca c ′ M 2 ′ d ′ Al e ′ Sif ′ N g ′ [2]
(However, M 1 ′ is one or more elements selected from the group consisting of Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.
M 2 ′ is Mg and / or Ba.
a ′, b ′, c ′, d ′, e ′, f ′, and g ′ each have a value within the following range.
0.00001 ≦ a ′ ≦ 0.15
0.1 ≦ b ′ ≦ 0.99999
0 ≦ c ′ <1
0 ≦ d ′ <1
a ′ + b ′ + c ′ + d ′ = 1
0.5 ≦ e ′ ≦ 1.5
0.5 ≦ f ′ ≦ 1.5
0.8 × (2/3 + e ′ + 4/3 × f ′) ≦ g ′ ≦ 1.2 × (2/3 + e ′ + 4/3 × f ′))
(14) The phosphor according to (13), wherein the oxygen content is 5% by weight or less.
(15) A method for producing a phosphor represented by the following general formula [2], wherein the pressure is 10 MPa to 200 MPa, the temperature is 800 ° C. or more and 2200 ° C. or less in a nitrogen-containing atmosphere having an oxygen concentration of 1000 ppm or less. A method for producing a phosphor, comprising performing nitriding by heating for at least 24 minutes and not longer than 24 minutes.
M 1 ′ a ′ Sr b ′ Ca c ′ M 2 ′ d ′ Al e ′ Sif ′ N g ′ [2]
(However, M 1 ′ is one or more elements selected from the group consisting of Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.
M 2 ′ is Mg and / or Ba.
a ′, b ′, c ′, d ′, e ′, f ′, and g ′ each have a value within the following range.
0.00001 ≦ a ′ ≦ 0.15
0.1 ≦ b ′ ≦ 0.99999
0 ≦ c ′ <1
0 ≦ d ′ <1
a ′ + b ′ + c ′ + d ′ = 1
0.5 ≦ e ′ ≦ 1.5
0.5 ≦ f ′ ≦ 1.5
0.8 × (2/3 + e ′ + 4/3 × f ′) ≦ g ′ ≦ 1.2 × (2/3 + e ′ + 4/3 × f ′) )
Claims (15)
該励起光源が、300nm以上、500nm以下のピーク発光波長を有する発光ダイオードであり、
該蛍光体として、付活元素M 1 と、2価の金属元素M 2 と、少なくともSiを含む4価の金属元素M 4 とを含み、かつ、
合金を、窒素含有雰囲気下で加熱し、窒化することにより得られた蛍光体(以下、「第1の蛍光体」とする。)を含有する
ことを特徴とする発光装置。 In a light-emitting device having an excitation light source and a phosphor that converts the wavelength of at least part of light from the excitation light source,
The excitation light source is a light emitting diode having a peak emission wavelength of 300 nm or more and 500 nm or less;
As the phosphor comprises the activator elements M 1, divalent metal elements M 2, and a tetravalent metal elements M 4 including at least Si, and,
A light emitting device comprising : a phosphor obtained by heating and nitriding an alloy in a nitrogen-containing atmosphere (hereinafter referred to as "first phosphor") .
MM 11 aa MM 22 bb MM 33 cc MM 44 dd NN ee OO ff [1] [1]
(但し、M(However, M 11 は、Cr、Mn、Fe、Ce、Pr、Nd、Sm、Eu、Tb、Dy、Ho、Er、Tm、及びYbよりなる群から選ばれる1種以上の元素であり、Is one or more elements selected from the group consisting of Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb,
MM 22 は、Mg、Ca、Sr、Ba、及びZnよりなる群から選ばれる1種以上の元素であり、Is one or more elements selected from the group consisting of Mg, Ca, Sr, Ba, and Zn,
MM 33 は、Al、Ga、In、及びScよりなる群から選ばれる1種以上の元素であり、Is one or more elements selected from the group consisting of Al, Ga, In, and Sc,
MM 44 は、Siを必須とする、Si、Ge、Sn、Ti、Zr、及びHfよりなる群から選ばれる1種以上の元素である。Is one or more elements selected from the group consisting of Si, Ge, Sn, Ti, Zr, and Hf, which essentially require Si.
a、b、c、d、e、fはそれぞれ下記の範囲の値である。a, b, c, d, e, and f are values in the following ranges, respectively.
0.00001≦a≦0.150.00001 ≦ a ≦ 0.15
a+b=1a + b = 1
0.5≦c≦1.50.5 ≦ c ≦ 1.5
0.5≦d≦1.50.5 ≦ d ≦ 1.5
2.5≦e≦3.52.5 ≦ e ≦ 3.5
0≦f≦0.5 )0 ≦ f ≦ 0.5)
MM 1’1 ’ a’a ’ SrSr b’b ’ CaCa c’c ’ MM 2’2 ’ d’d ’ AlAl e’e ’ SiSi f’f ’ NN g’g ’ [2] [2]
(但し、M(However, M 1’1 ’ は、Cr、Mn、Fe、Ce、Pr、Nd、Sm、Eu、Tb、Dy、Ho、Er、Tm及びYbからなる群から選ばれる1種以上の元素であり、Is one or more elements selected from the group consisting of Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb,
MM 2’2 ’ は、Mg及び/又はBaである。Is Mg and / or Ba.
a’、b’、c’、d’、e’、f’、g’はそれぞれ下記の範囲の値である。a ′, b ′, c ′, d ′, e ′, f ′, and g ′ each have a value within the following range.
0.00001≦a’≦0.150.00001 ≦ a ′ ≦ 0.15
0.1≦b’≦0.999990.1 ≦ b ′ ≦ 0.99999
0≦c’<10 ≦ c ′ <1
0≦d’<10 ≦ d ′ <1
a’+b’+c’+d’=1a '+ b' + c '+ d' = 1
0.5≦e’≦1.50.5 ≦ e ′ ≦ 1.5
0.5≦f’≦1.50.5 ≦ f ′ ≦ 1.5
0.8×(2/3+e’+4/3×f’)≦g’≦1.2×(2/3+e’+4/3×f’))0.8 × (2/3 + e ′ + 4/3 × f ′) ≦ g ′ ≦ 1.2 × (2/3 + e ′ + 4/3 × f ′))
MM 1’1 ’ a’a ’ SrSr b’b ’ CaCa c’c ’ MM 2’2 ’ d’d ’ AlAl e’e ’ SiSi f’f ’ NN g’g ’ [2] [2]
(但し、M(However, M 1’1 ’ は、Cr、Mn、Fe、Ce、Pr、Nd、Sm、Eu、Tb、Dy、Ho、Er、Tm及びYbからなる群から選ばれる1種以上の元素であり、Is one or more elements selected from the group consisting of Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb,
MM 2’2 ’ は、Mg及び/又はBaである。Is Mg and / or Ba.
a’、b’、c’、d’、e’、f’、g’はそれぞれ下記の範囲の値である。a ′, b ′, c ′, d ′, e ′, f ′, and g ′ each have a value within the following range.
0.00001≦a’≦0.150.00001 ≦ a ′ ≦ 0.15
0.1≦b’≦0.999990.1 ≦ b ′ ≦ 0.99999
0≦c’<10 ≦ c ′ <1
0≦d’<10 ≦ d ′ <1
a’+b’+c’+d’=1a '+ b' + c '+ d' = 1
0.5≦e’≦1.50.5 ≦ e ′ ≦ 1.5
0.5≦f’≦1.50.5 ≦ f ′ ≦ 1.5
0.8×(2/3+e’+4/3×f’)≦g’≦1.2×(2/3+e’+4/3×f’))0.8 × (2/3 + e ′ + 4/3 × f ′) ≦ g ′ ≦ 1.2 × (2/3 + e ′ + 4/3 × f ′))
酸素濃度1000ppm以下の窒素含有雰囲気下で、
圧力を10MPaから200MPa、温度を800℃以上、2200℃以下として、
1分以上、24時間以下加熱することにより、窒化を行うことを特徴とする蛍光体の製造方法。
M 1’ a’ Sr b’ Ca c’ M 2’ d’ Al e’ Si f’ N g’ [2]
(但し、M 1’ は、Cr、Mn、Fe、Ce、Pr、Nd、Sm、Eu、Tb、Dy、Ho、Er、Tm及びYbからなる群から選ばれる1種以上の元素であり、
M 2’ は、Mg及び/又はBaである。
a’、b’、c’、d’、e’、f’、g’はそれぞれ下記の範囲の値である。
0.00001≦a’≦0.15
0.1≦b’≦0.99999
0≦c’<1
0≦d’<1
a’+b’+c’+d’=1
0.5≦e’≦1.5
0.5≦f’≦1.5
0.8×(2/3+e’+4/3×f’)≦g’≦1.2×(2/3+e’+4/3×f’)) A method for producing a phosphor represented by the following general formula [2],
Under a nitrogen-containing atmosphere with an oxygen concentration of 1000 ppm or less,
The pressure is 10 to 200 MPa, the temperature is 800 ° C. or more and 2200 ° C. or less,
A method for producing a phosphor, wherein nitriding is performed by heating for 1 minute to 24 hours.
M 1 ′ a ′ Sr b ′ Ca c ′ M 2 ′ d ′ Al e ′ Sif ′ N g ′ [2]
(However, M 1 ′ is one or more elements selected from the group consisting of Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.
M 2 ′ is Mg and / or Ba.
a ′, b ′, c ′, d ′, e ′, f ′, and g ′ each have a value within the following range.
0.00001 ≦ a ′ ≦ 0.15
0.1 ≦ b ′ ≦ 0.99999
0 ≦ c ′ <1
0 ≦ d ′ <1
a ′ + b ′ + c ′ + d ′ = 1
0.5 ≦ e ′ ≦ 1.5
0.5 ≦ f ′ ≦ 1.5
0.8 × (2/3 + e ′ + 4/3 × f ′) ≦ g ′ ≦ 1.2 × (2/3 + e ′ + 4/3 × f ′) )
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JP2006086850A JP5130640B2 (en) | 2005-04-01 | 2006-03-28 | Method for manufacturing phosphor |
CN201310188892.8A CN103361046B (en) | 2005-04-01 | 2006-03-31 | Alloy powder for raw material of inorganic functional material and fluorophor |
CN2006800158625A CN101171321B (en) | 2005-04-01 | 2006-03-31 | Alloy powder for raw material of inorganic functional material and phosphor |
US11/910,320 US7824573B2 (en) | 2005-04-01 | 2006-03-31 | Alloy powder for material of inorganic functional material precursor and phosphor |
EP06730851A EP1867695A4 (en) | 2005-04-01 | 2006-03-31 | Alloy powder for raw material of inorganic functional material and phosphor |
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EP14169080.0A EP2781575A3 (en) | 2005-04-01 | 2006-03-31 | Alloy powder for inorganic funtional material precursor and phosphor |
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TW095111732A TWI433908B (en) | 2005-04-01 | 2006-04-03 | Fluorescent material and uses thereof |
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US12/615,002 US8460580B2 (en) | 2005-04-01 | 2009-11-09 | Alloy powder for raw material of inorganic functional material and phosphor |
US13/834,110 US8801970B2 (en) | 2005-04-01 | 2013-03-15 | Europium- and strontium-based phosphor |
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CN101360805A (en) * | 2006-02-28 | 2009-02-04 | 三菱化学株式会社 | Phosphor raw material and method for producing alloy for phosphor raw material |
JP4948015B2 (en) * | 2006-03-30 | 2012-06-06 | スタンレー電気株式会社 | Aluminate blue phosphor and light emitting device using the same |
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JP5292724B2 (en) * | 2006-05-19 | 2013-09-18 | 三菱化学株式会社 | Method for manufacturing phosphor based on nitride |
JP5378644B2 (en) * | 2006-09-29 | 2013-12-25 | Dowaホールディングス株式会社 | Method for producing nitride phosphor or oxynitride phosphor |
JP5332136B2 (en) * | 2006-09-29 | 2013-11-06 | 三菱化学株式会社 | Nitrogen-containing alloy and phosphor manufacturing method using the same |
JP5594924B2 (en) * | 2006-11-22 | 2014-09-24 | 三菱化学株式会社 | Phosphor, phosphor-containing composition, light emitting device, image display device, lighting device, and method for producing phosphor |
JP2008208238A (en) * | 2007-02-27 | 2008-09-11 | Showa Denko Kk | Fluorescent substance and method for producing the same and lighting apparatus and image display device equipped with the same |
US20100213822A1 (en) * | 2007-08-01 | 2010-08-26 | Satoshi Shimooka | Phosphor and production method thereof, crystalline silicon nitride and production method thereof, phosphor-containing composition, and light emitting device, display and illuminating device using the phosphor |
CN101925665B (en) | 2008-01-21 | 2013-04-03 | 日亚化学工业株式会社 | Light emitting device |
JP5429731B2 (en) * | 2008-03-14 | 2014-02-26 | 国立大学法人東京工業大学 | Phosphor production method, phosphor-containing composition, light emitting device, image display device, and illumination device |
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US20120019127A1 (en) * | 2009-03-26 | 2012-01-26 | Naoto Hirosaki | Phosphor, method for producing same, light-emitting device, and image display apparatus |
CN102443391B (en) | 2010-09-30 | 2014-07-16 | 奇美实业股份有限公司 | Method for controlling ratio of structural components of fired phosphor, and light-emitting device |
US20140015400A1 (en) * | 2012-07-13 | 2014-01-16 | Rohm And Haas Electronic Materials Llc | Phosphor and light emitting devices comprising same |
US20140062287A1 (en) * | 2012-08-29 | 2014-03-06 | Lightscape Materials, Inc. | Oxycarbidonitride phosphor and devices using same |
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