JP2006303275A - Film-pattern substrate, film-pattern forming method, device manufacturing method, electro-optic device, and electronic appliance - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly reliable thin-film wiring-pattern. <P>SOLUTION: A film-pattern forming method has a process for forming a barrier plate B on a substrate P, a process for forming a first film-pattern 4a in an opening 2 partitioned by the barrier plate B, a process for removing the portions of the barrier plate B which are opposed respectively to the respective sides of the first film-pattern 4a, and a process for forming a second film-pattern 5 by its plating wherewith the respective sides and the upper portion of the first film-pattern 4a are covered. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a film pattern substrate, a film pattern forming method, a device manufacturing method, an electro-optical device, and an electronic apparatus.

  For example, pattern formation by photolithography is widely used for manufacturing devices having wirings used in electronic circuits or integrated circuits. In this photolithography method, a thin film wiring pattern is formed by applying a photosensitive material called a resist on a substrate on which a conductive film has been formed in advance, irradiating and developing a circuit pattern, and etching the conductive film according to the resist pattern. To form. This photolithography method requires large-scale equipment such as a vacuum device and complicated processes for the formation and etching of functional films, and the material usage efficiency is only a few percent, and most of them must be discarded, resulting in production costs. Is expensive.

On the other hand, a method of forming a wiring pattern on a substrate by using a droplet discharge method in which a liquid material is discharged from the liquid discharge head, that is, a so-called inkjet method has been proposed (see, for example, Patent Document 1). ). In this method, a wiring pattern ink which is a functional liquid in which conductive fine particles such as Ag (silver) and Cu (copper) are dispersed is directly applied to a substrate, and then heat treatment and laser irradiation are performed. It converts into a thin film conductive film pattern. According to this method, there is an advantage that photolithography is not required, the process is greatly simplified, and the amount of raw materials used is reduced.
On the other hand, in this type of metal wiring pattern (Ag, Cu), in order to improve its migration (electromigration, stress migration, ion migration), plasma resistance, and wet etch resistance, a Ni film or the like is used as a protective film by an inkjet method. It has been proposed to form a laminated film (Seiko Epson, etc.).
US Pat. No. 5,132,248

However, the following problems exist in the conventional technology as described above.
It is difficult to improve migration characteristics only by forming a barrier film on the upper surface of the metal wiring pattern. In addition, in order to cope with the flattening and thinning of the wiring, when ink is applied between the banks (partitions), a gap is formed between the side surface of the wiring and the bank after drying and baking of the protective film ink. Since moisture may enter, there is a problem that reliability as a metal wiring is lacking.
Furthermore, when forming a metal wiring pattern by droplet ejection, the flatness and denseness of the formed wiring tend to be insufficient.

  The present invention has been made in consideration of the above points, and provides a film pattern substrate, a film pattern forming method, a device manufacturing method, an electro-optical device, and an electronic apparatus that realize a highly reliable film pattern. With the goal.

In order to achieve the above object, the present invention employs the following configuration.
The method for forming a film pattern according to the present invention includes a step of forming a partition on a substrate, a step of forming a first film pattern in an opening defined by the partition, and a side of the first film pattern. The method includes a step of removing the partition walls, and a step of forming a second film pattern covering the side and upper portions of the first film pattern by plating.

  Therefore, in the film pattern forming method of the present invention, the first film pattern side part (side face) can be exposed by removing the partition wall facing the side part of the first film pattern. Then, not only the upper part of the first film pattern but also the exposed side part of the first film pattern is covered and protected with the second film pattern, thereby improving the migration characteristics and the like of the first film pattern with high reliability. A film pattern can be formed. In the present invention, since the second film pattern is formed by plating, it is possible to form a film pattern having a dense and good film quality.

As the partition wall, a configuration in which the tip end side of the opening is formed in a tapered shape with a gradually increasing diameter or a configuration having a stepped portion in which the tip end side of the opening is omitted can be suitably employed.
In the case of this configuration, the stepped portion can be formed by half exposure.

In the present invention, it is preferable that a step of forming a third film pattern on the bottom of the opening by plating is formed before forming the first film pattern.
Therefore, in the present invention, the bottom portion can be covered in addition to the side portion and the top portion of the first film pattern, and the migration characteristics and the like of the first film pattern can be further improved to further improve the reliability.
In this case, it is preferable that the third film pattern is formed of the same material as the second film pattern.
Thereby, in this invention, the same plating tank can be used and it can contribute to the improvement of productivity.

In the present invention, it is preferable that the second film pattern formed on the first film pattern is substantially flush with the upper surface of the partition wall.
As a result, in the present invention, the substrate on which the first film pattern and the second film pattern are formed is flattened, and even when the film pattern is formed over a plurality of layers, the wiring substrate has excellent flatness with few irregularities. It becomes possible. Further, when the wiring board is used for a display device, it is possible to simultaneously reduce the wiring resistance by increasing the thickness of the wiring while suppressing display unevenness due to the unevenness of the wiring.

In the present invention, it is preferable that the first film pattern is formed by droplet discharge.
Accordingly, in the present invention, photolithography is not necessary when forming the first film pattern, the process is greatly simplified, and the amount of raw materials used can be reduced.

The device manufacturing method of the present invention is a device manufacturing method in which a film pattern is formed on a substrate, wherein the film pattern is formed on the substrate by the film pattern forming method described above. To do.
Therefore, in the device manufacturing method of the present invention, it is possible to manufacture a device having a highly reliable film pattern with improved migration characteristics and the like. In addition, according to the present invention, a device having a film pattern having a dense and high-quality film quality can be manufactured.

In this case, it is preferable that the film pattern constitutes a part of the switching element provided on the substrate.
Thereby, in this invention, when a film | membrane pattern comprises some switching elements, such as TFT (thin film transistor) provided on the said board | substrate, reliable and high quality switching elements can be obtained.

In addition, an electro-optical device according to the present invention includes a device manufactured using the device manufacturing method described above.
An electronic apparatus according to the present invention includes the electro-optical device described above.
Therefore, according to the present invention, it is possible to obtain a high-quality electro-optical device and electronic apparatus with high reliability.

On the other hand, the film pattern substrate of the present invention is a film pattern substrate in which a first film pattern and a second film pattern are stacked on the substrate, and the second film pattern is formed on the side and upper portion of the first film pattern. The film pattern is formed by covering.
Therefore, in the film pattern substrate of the present invention, not only the upper part of the first film pattern but also the exposed side part of the first film pattern is covered with the second film pattern to protect the migration characteristics of the first film pattern. It is possible to form a highly reliable film pattern with improved characteristics.

In this film pattern substrate, the bottom of the first film pattern is preferably covered with a third film pattern.
Thereby, in the present invention, the entire surface of the first film pattern can be covered including the bottom as well as the side and top of the first film pattern, and the migration characteristics of the first film pattern can be further improved, Reliability can be further increased.

Furthermore, in this film pattern substrate, it is preferable that the third film pattern is formed of the same material as the second film pattern.
Thereby, in this invention, a 2nd film | membrane pattern and a 3rd film | membrane pattern can be manufactured using the same plating tank, and it can contribute to the improvement of productivity.

Hereinafter, embodiments of a film pattern substrate, a film pattern forming method, a device manufacturing method, an electro-optical device, and an electronic apparatus according to the present invention will be described with reference to FIGS.
(First embodiment)
First, a first embodiment of a film pattern forming method according to the present invention will be described.
FIGS. 1A to 1C and FIGS. 2D to 2F are diagrams showing steps of a film pattern forming method.

First, as shown in FIG. 1A, an organic photosensitive material is applied to the surface of the substrate P by a predetermined method such as spin coating, spray coating, roll coating, die coating, dip coating, and the resist layer 1 is formed. Form. Various substrates such as glass, quartz glass, Si wafer, plastic film, and metal plate can be used as the substrate P on which the wiring pattern is formed. Also included are those in which a semiconductor film, a metal film, a dielectric film, an organic film or the like is formed as a base layer on the surface of these various material substrates.
Then, as shown in FIG. 1B, a mask for forming an opening 2 corresponding to the shape and width of the film pattern (wiring pattern) is applied, and the resist layer 1 is exposed.

In addition, at the front end side (the upper end side in FIG. 1) of the opening 2, the resist layer 1 is removed to a predetermined depth by development in a later process, but the optical energy is not removed to the depth reaching the substrate P. So-called half exposure is performed.
Thereafter, by developing and etching the resist layer 1, as shown in FIG. 1B, the bank having the step 3 on the upper end side and forming the opening 2 having a film pattern width (for example, 10 μm width) is formed. (Partition walls) B and B are projected on the substrate P.
The substrate P is subjected to HMDS treatment (a method of applying (CH ₃ ) ₃ SiNHSi (CH ₃ ) ₃ in a vapor state) as a surface modification treatment, if necessary.

  The organic material for forming the bank B (resist layer 1) may be a material that originally exhibits liquid repellency with respect to the film pattern forming material. Insulating organic materials that can be easily patterned by photolithography may be used. For example, polymer materials such as acrylic resin, polyimide resin, olefin resin, and melamine resin, photosensitive polysilazane, siloxane, and the like can be used.

Next, a metal wiring material is applied, but before that, in order to remove the resist (organic matter) residue at the time of bank formation between banks B and to make the surface of the substrate P lyophilic, the residue treatment is performed on the substrate P. It is preferable to perform a lyophobic treatment process on the bank B so that the applied metal wiring material does not remain in the bank B.
As the residue treatment, an ultraviolet (UV) irradiation treatment for performing a residue treatment by irradiating ultraviolet rays, an O ₂ plasma treatment using oxygen as a treatment gas in an air atmosphere, a wet etching treatment using buffered hydrofluoric acid, or the like can be selected.
Further, as the liquid repellent treatment, for example, a plasma treatment method (CF ₄ plasma treatment method) using tetrafluoromethane as a treatment gas in an air atmosphere can be employed.

After the residue treatment step and the liquid repellency treatment step, a wiring pattern forming material (metal wiring material) is applied to the opening 2 on the substrate P by using a droplet discharge method using a droplet discharge device.
As the wiring pattern ink, it is possible to use a dispersion liquid in which conductive fine particles are dispersed in a dispersion medium, or a solution in which an organic silver compound or silver oxide nanoparticles are dispersed in a solvent (dispersion medium).

  In the present embodiment, as the conductive fine particles, for example, metal fine particles containing any one of gold, silver, copper, palladium, and nickel, these oxides, and fine particles of conductive polymers and superconductors. Etc. are used. The dispersion medium is not particularly limited as long as it can disperse the conductive fine particles and does not cause aggregation. For example, in addition to water, alcohols such as methanol, ethanol, propanol, butanol, n-heptane, n-octane, decane, dodecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2- Methoxyethyl) ether, ether compounds such as p-dioxane, propylene carbonate, γ- Butyrolactone, N- methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, can be exemplified polar compounds such as cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferred from the viewpoints of fine particle dispersibility and dispersion stability, and ease of application to the droplet discharge method (inkjet method). More preferred dispersion media include water and hydrocarbon compounds.

Then, the liquid material containing the wiring pattern forming material is discharged as droplets from the droplet discharge head of the above-described droplet discharge apparatus, and the droplet 4 is discharged onto the substrate P as shown in FIG. It arranges in the opening part 2 of. As the droplet discharge conditions, for example, an ink weight of 4 ng / dot and an ink speed (discharge speed) of 5 to 7 m / sec can be employed.
At this time, since the opening 2 is partitioned into the banks B and B, it is possible to prevent the liquid material from spreading outside the predetermined position. In addition, since the banks B and B have liquid repellency, even if a part of the ejected droplets is placed on the bank B, the bank surface has liquid repellency, so It is repelled and flows down to the opening 2 between the banks. Further, since the opening 2 is given lyophilicity, the discharged liquid material is more likely to spread in the opening 2 so that the liquid material embeds the opening 2 more uniformly within a predetermined position. Can be.

  After the droplets are discharged onto the substrate P, the substrate P is heated and baked by a heat treatment using a hot plate, an electric furnace or the like, thereby forming a wiring pattern film on the bottom of the opening 2 as shown in FIG. (First film pattern) 4a is formed.

Next, by anisotropic ashing, as shown in FIG. 2 (e), the step 3 of the bank B facing the side of the wiring pattern film 4a and a part of the bank surface other than the step 3 are removed. (Peel). Thereby, in the opening 2, a gap is formed between the side (side surface) of the wiring pattern film 4a and the bank B, and the side and upper part of the wiring pattern film 4a are exposed.
As the ashing treatment, for example, plasma ashing or the like may be employed in which a gas (such as oxygen gas, nitrogen gas, or argon gas) reacted with a bank (resist) and the bank is vaporized to be removed and removed. The bank is a solid substance composed of carbon, oxygen, and hydrogen. When the bank chemically reacts with oxygen plasma, it becomes CO ₂ , H ₂ O, O ₂ and can be separated as a gas.

Subsequently, a solution containing a Ni plating precursor (catalyst) such as palladium in the opening 2 is selectively applied to the wiring pattern film 4a by the droplet discharge method or the dipping method described above.
As this solution, for example, a solution in which palladium (or tin in some cases) is dissolved in a hydrochloric acid-based solution can be used.

Next, as shown in FIG. 2F, a nickel film (second film pattern) 5 is formed by electrolytic or electroless Ni plating so as to cover the side and upper part of the wiring pattern film 4a. When using electroless Ni plating, for example, the substrate P is immersed in an electroless Ni plating bath heated to 80 to 90 ° C. for 1 to 3 minutes, and a nickel film is formed on the palladium core provided on the wiring pattern film 4a. 5 is plated to a predetermined thickness.
At this time, the upper part of the nickel film 5 is made substantially flush with the upper surface Ba of the bank B by adjusting the immersion time in the plating bath.
In this way, the wiring pattern film 4a whose side and upper portions are covered with the nickel film 5 is formed on the substrate P.

  As described above, in this embodiment, since the side portion is covered with the nickel film 5 in addition to the upper portion of the wiring pattern film 4a, it is possible to completely eliminate adverse effects such as moisture. In addition, migration, plasma resistance, wet etch resistance, and the like can be improved, and the reliability of the film pattern can be improved.

  Further, when plating is formed on the side of the wiring pattern film 4a, conventionally, the bank is removed after the wiring pattern film 4a is formed, and a bank is formed again with a gap between the wiring pattern film 4a. In this case, since it is necessary to carry out the second photolithography, it contributes to the cost increase, and the alignment at the time of photolithography, the profile of the bank cross section, the defective development of the extraction pattern, and the wiring pattern film 4a. Although technical problems such as the influence of halation remain, in this embodiment, since the step portion 3 is formed in advance and the step portion 3 is removed by ashing, a nickel film can be formed easily and accurately. It is.

Further, in this embodiment, since the nickel film 5 is formed by plating, even when the wiring pattern film 4a is formed by a droplet discharge method lacking in denseness, a dense film pattern having a good quality is formed. be able to.
Furthermore, in this embodiment, since the nickel film 5 is formed flush with the upper surface Ba of the bank B, the film pattern can be formed with improved flatness. Therefore, even when the film pattern is laminated over a plurality of layers, the film pattern of each layer can be formed flat.

(Second Embodiment)
Next, a second embodiment of the film pattern forming method according to the present invention will be described.
FIGS. 3A to 3C and FIGS. 4D to 4F are views showing steps of the film pattern forming method. In these drawings, the same reference numerals are given to the same elements as those of the first embodiment shown in FIGS. 1 and 2, and the description thereof is omitted or simplified.

  As in the first embodiment, the resist layer 1 is formed, and further, exposure and half exposure are performed, and development is performed. Thus, as illustrated in FIG. A bank B to be formed is projected on the substrate P.

Next, a solution containing a Ni plating precursor (catalyst) such as palladium is selectively applied onto the substrate P at the bottom of the opening 2 by the above-described droplet discharge method or immersion method.
Then, a nickel film (third film pattern) 6 having a predetermined thickness is formed on the substrate P by electroless Ni plating as shown in FIG. The conditions for electroless Ni plating are the same as in the first embodiment.

  Subsequently, as shown in FIG. 3C, a wiring pattern forming material (metal wiring material) 4 is applied onto the nickel film 6 in the opening 2 by using a droplet discharging method using a droplet discharging device. . After the droplets are discharged, the substrate P is heated and baked by a heat treatment using a hot plate, an electric furnace, etc., so that wiring is formed on the nickel film 6 at the bottom of the opening 2 as shown in FIG. A pattern film 4a is formed.

  Next, by anisotropic ashing, as shown in FIG. 4 (e), the step 3 of the bank B facing the side portions of the wiring pattern film 4a and the nickel film 6 and the surface of the bank other than the step 3 are formed. Remove (peel) a part. Thereby, in the opening part 2, a gap is formed between the side (side surface) of the wiring pattern film 4a and the nickel film 6 and the bank B, and the upper and side parts of the wiring pattern film 4a, The side part of the nickel film 6 is exposed. Thereafter, a solution containing a Ni plating precursor (catalyst) such as palladium in the opening 2 is selectively applied to the wiring pattern film 4a by the droplet discharge method or the dipping method described above.

Then, as shown in FIG. 4F, the nickel film 5 covering the side and upper portions of the wiring pattern film 4a is formed by the above-described electrolytic or electroless Ni plating. Also in this case, it is preferable that the upper part of the nickel film 5 is substantially flush with the upper surface Ba of the bank B by adjusting the immersion time in the plating bath.
In this way, the wiring pattern film 4a whose side, top and bottom are covered with the nickel films 5 and 6 is formed on the substrate P.

  In the film pattern forming method of the present embodiment, in addition to obtaining the same effects as those of the first embodiment, the bottom of the wiring pattern film 4a is also covered with the nickel film 6, so that the wiring pattern film 4a is entirely covered. It is possible to further increase the reliability of the film pattern including ion migration at the interface between the substrate P and the bank.

  Note that the film formed by plating is not limited to nickel, and platinum, rhodium, and palladium can be formed when an electrolytic plating method is applied. In addition to these, gold, chromium, tungsten, anodized aluminum, and alloys of these metals can be formed.

(Manufacturing method of liquid crystal display device)
Subsequently, a manufacturing method of a liquid crystal display device which is an electro-optical device according to the present invention and a liquid crystal display device manufactured using the manufacturing method will be described below with reference to FIGS.

As shown in FIG. 5, using the film pattern forming method described in the first embodiment, the side and upper portions of the wiring pattern (first film pattern) 12a are covered with a nickel film (second film pattern) 12b. The gate scan electrode (film pattern) 12 is formed so as to fill the opening 11a, which is a drawing region partitioned by the bank (partition) 11, and to be substantially flush with the upper surface of the bank 11. As a material constituting the gate scanning electrode 12 (wiring pattern 12a), Ag, Al, Au, Cu, palladium, Ni, W-si, a conductive polymer, or the like can be suitably used.
By this step, the first conductive layer A1 having a flat upper surface including the bank 11 and the gate scanning electrode 12 is formed on the substrate 10.

In the first insulating layer forming step subsequent to the gate scanning electrode forming step, the gate scanning line insulating film 13 is formed so as to cover the upper surface of the bank 11 and the gate scanning electrode 12 as shown in FIG. To do. As a material of the gate scanning line insulating film _{13, SiO 2, SiNx, BPSG} , etc. NSG can be adopted.
In addition, when forming SiNx by the CVD method, a heat history of 250 ° C. to 350 ° C. is necessary. However, by using an inorganic material containing Si atoms for the bank, there are problems with transparency and heat resistance. It is possible to avoid it.
Since the gate scanning line insulating film 13 formed in this way is formed on the flat first conductive layer A1, it also has a flat upper surface.

Next, in the source electrode forming step, as shown in FIG. 7, the wiring pattern (first film pattern) 15a is formed on the upper surface of the gate scanning line insulating film 13 by using the film pattern forming method described in the first embodiment. An opening which is a drawing region in which a source electrode 15 (film pattern) which is covered with a nickel film (second film pattern) 15 b and which intersects the gate scanning electrode 12 is partitioned by banks (partition walls) 14. It is formed so as to fill the inside of the portion 14 a and to be substantially flush with the upper surface of the bank 14. As a material constituting the source electrode 15 (wiring pattern 15a), Ag, Al, Au, Cu, palladium, Ni, W-si, a conductive polymer, or the like can be suitably used.
Through the above steps, the second conductive layer A2 having a flat upper surface including the bank 14 and the source electrode 15 is formed on the substrate 10.

In the second insulating layer forming step subsequent to the source electrode forming step, the source line insulating film 16 is formed so as to cover the upper surface of the bank 14 and the source electrode 15 as shown in FIG. As a material for the source line insulating film _{16, SiO 2, SiNx, BPSG} , etc. NSG can be adopted.
Since the source line insulating film 16 thus formed is formed on the flat second conductive layer A2, it also has a flat upper surface.

  In the third layer bank forming step following the second layer insulating film forming step, as shown in FIG. 9, the bank is formed on the upper surface of the source line insulating film 16 except for the patterning region of the pixel electrode (ITO). 17 is formed by photolithography. As the material of the bank 17, polymer materials such as acrylic resin, polyimide resin, olefin resin, and melamine resin, photosensitive polysilazane, siloxane, and the like are preferably used.

In the pixel electrode formation process subsequent to the third-layer bank formation process, as shown in FIG. 10, droplets that form the material of the pixel electrode are ejected to the area secured by the bank 17 by the droplet ejection method. Thus, the pixel electrode 18 is formed. Since the pixel electrode 18 formed in this way is formed on the flat source line insulating film 16 together with the bank 17, it also has a flat upper surface.
FIG. 11 shows an α-si TFT device (switching element) portion formed through the above steps. In the figure, reference numeral 19a indicates a drain electrode, and reference numeral 19b indicates a channel region (α-si).
After this pixel electrode forming step, the lower substrate as a device is completed by performing main baking, formation of an alignment film, and rubbing treatment. Then, a liquid crystal display device is completed (not shown) by constructing the lower substrate by sandwiching a liquid crystal layer between the lower substrate and a separately manufactured upper substrate.

  In the liquid crystal display device manufacturing method of this embodiment, since the gate scanning electrode 12 and the source electrode 15 are formed using the film pattern forming method described in the above embodiment, adverse effects such as moisture can be eliminated. In addition, since the wiring can be improved in migration, plasma resistance, wet etch resistance, etc., the reliability of the device can be improved.

Next, of the method for manufacturing the liquid crystal display device shown in the above embodiment, another embodiment for manufacturing a TFT will be described with reference to FIGS.
In these drawings, the same components as those in FIGS. 5 to 11 shown as the above embodiment are denoted by the same reference numerals, and the description thereof is simplified.

  As shown in FIG. 12, first, a first-layer bank 11 for providing an opening 11a is formed on the upper surface of a substrate 10 such as a glass substrate based on a photolithography method. The bank 11 may have, for example, optical transparency and liquid repellency after formation. The material includes Si atoms in addition to polymer materials such as acrylic resin, polyimide resin, olefin resin, and melamine resin. An inorganic material such as polysilazane is preferably used.

In the gate scan electrode forming step following the first layer bank forming step, the side and upper portions of the wiring pattern 12a are covered with the nickel film 12b using the film pattern forming method described in the first embodiment. The gate scanning electrode 12 is formed so as to fill the opening 11 a that is a drawing region partitioned by the bank 11 and substantially flush with the upper surface of the bank 11.
Through the above steps, the first conductive layer A1 made of, for example, silver (Ag) having a flat upper surface made up of the bank 11 and the gate scanning electrode 12 is formed on the substrate 10.

  Next, as shown in FIG. 13, the gate insulating film 13, the active layer 8, and the contact layer 9 are continuously formed by plasma CVD. A silicon nitride film is formed as the gate insulating film 13, an amorphous silicon film is formed as the active layer 10, and an n + silicon film is formed as the contact layer 9 by changing the source gas and plasma conditions. In the case of forming by the CVD method, a heat history of 250 ° C. to 350 ° C. is required. However, problems related to transparency and heat resistance can be avoided by using an inorganic material for the bank.

  In the second bank forming step subsequent to the semiconductor layer forming step, as shown in FIG. 14, two layers are provided on the upper surface of the gate insulating film 13 to provide an opening 14a extending in a direction intersecting the opening 11a. The bank of eyes 14 is formed based on a photolithography method. For the bank 14, the same material as that of the bank 11 is used.

  In the source / drain electrode formation step subsequent to the second-layer bank formation step, as shown in FIG. 15, the film pattern formation method described in the first embodiment is used to form the gate scan electrode 12. The intersecting source electrode 15 whose wiring pattern 15a is covered with the nickel film 15b and the wiring pattern (first film pattern) 166a are covered with the nickel film (second film pattern) 166b. The drain electrode (film pattern) 166 thus formed is formed. As the material constituting the drain electrode 166, the same material as that of the source electrode 15 is used.

Then, an insulating material 177 is disposed so as to fill the opening 14a in which the source electrode 15 and the drain electrode 166 are disposed. Through the above steps, a flat upper surface 20 made of the bank 14 and the insulating material 177 is formed on the substrate 10.
Then, a contact hole 19 is formed in the insulating material 177, a patterned pixel electrode (ITO) 18 is formed on the upper surface 20, and the drain electrode 16 and the pixel electrode 18 are connected via the contact hole 19. A TFT which is a switching element is formed.

(Liquid crystal display device)
Next, a liquid crystal display device which is an example of the electro-optical device of the invention will be described. FIG. 16 is a plan view of the liquid crystal display device according to the present invention as seen from the counter substrate side shown together with each component, and FIG. 17 is a cross-sectional view taken along the line HH ′ of FIG. FIG. 18 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display region of the liquid crystal display device. In each drawing used in the following description, the scale is different for each layer and each member so that each layer and each member can be recognized on the drawing.

  16 and 17, in the liquid crystal display device (electro-optical device) 100 according to the present embodiment, a pair of TFT array substrate 10 and counter substrate 20 are attached by a sealing material 52 which is a photo-curable sealing material. The liquid crystal 50 is sealed and held in the region partitioned by the sealing material 52. The sealing material 52 is formed in a frame shape that is closed in a region within the substrate surface, does not include a liquid crystal injection port, and does not have a trace sealed with the sealing material.

  A peripheral parting 53 made of a light shielding material is formed in a region inside the region where the sealing material 52 is formed. A data line driving circuit 201 and a mounting terminal 202 are formed along one side of the TFT array substrate 10 in a region outside the sealing material 52, and the scanning line driving circuit 204 is formed along two sides adjacent to the one side. Is formed. On the remaining side of the TFT array substrate 10, a plurality of wirings 205 are provided for connecting between the scanning line driving circuits 204 provided on both sides of the image display area. Further, at least one corner of the counter substrate 20 is provided with an inter-substrate conductive material 206 for establishing electrical continuity between the TFT array substrate 10 and the counter substrate 20.

Instead of forming the data line driving circuit 201 and the scanning line driving circuit 204 on the TFT array substrate 10, for example, a TAB (Tape Automated Bonding) substrate on which a driving LSI is mounted and a peripheral portion of the TFT array substrate 10 The terminal group formed in the above may be electrically and mechanically connected via an anisotropic conductive film. In the liquid crystal display device 100, the type of liquid crystal 50 to be used, that is, an operation mode such as a TN (Twisted Nematic) mode, a C-TN method, a VA method, an IPS method, or a normally white mode / normally black mode. According to the above, a retardation plate, a polarizing plate and the like are arranged in a predetermined direction, but the illustration is omitted here.
Further, when the liquid crystal display device 100 is configured for color display, in the counter substrate 20, for example, red (R), green (G), A blue (B) color filter is formed together with the protective film.

  In the image display region of the liquid crystal display device 100 having such a structure, as shown in FIG. 18, a plurality of pixels 100a are configured in a matrix, and each of these pixels 100a has a pixel switching region. TFT (switching element) 30 is formed, and a data line 6 a for supplying pixel signals S 1, S 2,..., Sn is electrically connected to the source of the TFT 30. Pixel signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. . Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured.

The pixel electrode 18 is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,..., Sn supplied from the data line 6a is obtained by turning on the TFT 30 as a switching element for a certain period. Write to each pixel at a predetermined timing. The pixel signals S1, S2,..., Sn written in the liquid crystal via the pixel electrode 18 in this way are held for a certain period with the counter electrode 121 of the counter substrate 20 shown in FIG. In order to prevent the retained pixel signals S1, S2,..., Sn from leaking, a storage capacitor 60 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 18 and the counter electrode 121. For example, the voltage of the pixel electrode 18 is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. Thereby, the charge retention characteristics are improved, and the liquid crystal display device 100 with a high contrast ratio can be realized.
In this embodiment, since the TFT 30 is manufactured by the method for manufacturing a liquid crystal display device described in the above embodiment, a highly reliable liquid crystal display device can be manufactured.

In the above embodiment, the TFT 30 is used as a switching element for driving the liquid crystal display device 100. However, the present invention can be applied to, for example, an organic EL (electroluminescence) display device in addition to the liquid crystal display device. An organic EL display device has a structure in which a thin film containing fluorescent inorganic and organic compounds is sandwiched between a cathode and an anode, and excitons are obtained by injecting electrons and holes into the thin film to excite them. It is an element that generates (exciton) and emits light by utilizing light emission (fluorescence / phosphorescence) when the exciton is recombined. Then, on the substrate having the TFT 30 described above, among the fluorescent materials used for the organic EL display element, a material exhibiting each emission color of red, green and blue, that is, a light emitting layer forming material and a hole injection / electron transport layer are provided. A self-luminous full-color EL device can be manufactured by using ink as a material to be formed and patterning each.
The range of the device (electro-optical device) in the present invention includes such an organic EL device.

(Electronics)
Next, an electronic apparatus having the liquid crystal display device 100 as a constituent element will be described.
FIG. 19A is a perspective view showing an example of a mobile phone. In FIG. 19A, reference numeral 600 denotes a mobile phone main body (electronic device), and reference numeral 601 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
FIG. 19B is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 19B, reference numeral 700 denotes an information processing device (electronic device), 701 denotes an input unit such as a keyboard, 703 denotes an information processing body, and 702 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment. .
FIG. 19C is a perspective view showing an example of a wristwatch type electronic device. In FIG. 19C, reference numeral 800 denotes a watch body (electronic device), and reference numeral 801 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
Since the electronic apparatus shown in FIGS. 19A to 19C includes the liquid crystal display device of the above embodiment, it can be reduced in size and thickness.
In addition, although the electronic device of this embodiment shall be provided with a liquid crystal device, it can also be set as the electronic device provided with other electro-optical devices, such as an organic electroluminescent display apparatus and a plasma type display apparatus.

As another example of an electronic device, a semiconductor integrated circuit chip and an antenna circuit are built in a casing made up of a card base and a card cover, and power is supplied by at least one of an external transceiver and electromagnetic waves or capacitive coupling. Alternatively, an antenna circuit in a non-contact card medium that performs at least one of data exchange can be formed by the film pattern forming method according to the above embodiment.
This makes it possible to manufacture a highly reliable non-contact card medium.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

  For example, the film pattern shown in the above embodiment and the material of the coating film covering the top and sides (and the bottom) are examples, and the film pattern forming material is gold, silver, copper, palladium, or nickel. In addition to metal fine particles containing any of these, these oxides, fine particles of conductive polymers and superconductors, or as a coating film (plating material), in addition to nickel, platinum, rhodium, palladium, gold, A structure using chromium, tungsten, alumite-aluminum, or an alloy of these metals may be used.

  In addition, the shape of the film pattern is not limited to a line shape typified by a wiring pattern, but is formed in a dot shape (dot shape) or a surface shape such as a connection pad. It is also applicable to.

It is a figure which shows the process of the film | membrane pattern formation method which concerns on 1st Embodiment. It is a figure which shows the process of the film | membrane pattern formation method which concerns on 1st Embodiment. It is a figure which shows the process of the film | membrane pattern formation method which concerns on 2nd Embodiment. It is a figure which shows the process of the film | membrane pattern formation method which concerns on 2nd Embodiment. It is a figure which shows one Embodiment of the manufacturing method of a liquid crystal display device. It is a figure which shows one Embodiment of the manufacturing method of a liquid crystal display device. It is a figure which shows one Embodiment of the manufacturing method of a liquid crystal display device. It is a figure which shows one Embodiment of the manufacturing method of a liquid crystal display device. It is a figure which shows one Embodiment of the manufacturing method of a liquid crystal display device. It is a figure which shows one Embodiment of the manufacturing method of a liquid crystal display device. It is a figure which shows one Embodiment of the manufacturing method of a liquid crystal display device. It is a figure which shows the process of manufacturing TFT. It is a figure which shows the process of manufacturing TFT. It is a figure which shows the process of manufacturing TFT. It is a figure which shows the process of manufacturing TFT. It is the top view which looked at the liquid crystal display device from the counter substrate side. It is sectional drawing which follows the H-H 'line | wire of FIG. It is an equivalent circuit diagram of a liquid crystal display device. It is a figure which shows the specific example of the electronic device of this invention.

Explanation of symbols

B, 11, 14 ... bank (partition), Ba ... upper surface, P ... substrate, 2, 11a, 14a ... opening, 3 ... step, 4a, 12a, 15a, 166a ... wiring pattern film (first film pattern) 5, 12b, 15b, 166b ... nickel film (second film pattern), 6 ... nickel film (third film pattern), 10 ... substrate, 12 ... gate scanning electrode (film pattern), 15 ... source electrode (film pattern) ), 30 ... TFT (switching element), 100 ... Liquid crystal display device (electro-optical device), 166 ... Drain electrode (film pattern), 600 ... Cell phone body (electronic device), 700 ... Information processing device (electronic device), 800 ... Watch body (electronic equipment)

Claims (15)

Forming a partition on the substrate;
Forming a first film pattern in the opening defined by the partition;
Removing the partition walls facing the side portions of the first film pattern;
Forming a second film pattern covering the side and upper part of the first film pattern by plating. The film pattern forming method according to claim 1,
The method of forming a film pattern, wherein the partition wall is formed in a tapered shape in which the tip end side of the opening gradually increases in diameter. The film pattern forming method according to claim 1,
The method for forming a film pattern, wherein the partition wall has a stepped portion in which a tip end side of the opening is omitted. The film pattern forming method according to claim 3.
The film pattern forming method, wherein the stepped portion is formed by half exposure. In the film | membrane pattern formation method in any one of Claim 1 to 4,
A film pattern forming method comprising: forming a third film pattern on the bottom of the opening by plating before forming the first film pattern. The film pattern forming method according to claim 5, wherein
The film pattern forming method, wherein the third film pattern is formed of the same material as the second film pattern. In the film | membrane pattern formation method in any one of Claim 1 to 6,
A film pattern forming method, wherein the second film pattern formed on the first film pattern is formed substantially flush with an upper surface of the partition wall. In the film | membrane pattern formation method in any one of Claim 1 to 7,
A film pattern forming method, wherein the first film pattern is formed by droplet discharge. A device manufacturing method in which a film pattern is formed on a substrate,
A device manufacturing method, wherein the film pattern is formed on the substrate by the film pattern forming method according to claim 1. The device manufacturing method according to claim 9, wherein
The film manufacturing method comprises a part of a switching element provided on the substrate.   An electro-optical device comprising a device manufactured using the device manufacturing method according to claim 9.   An electronic apparatus comprising the electro-optical device according to claim 11. A film pattern substrate in which a first film pattern and a second film pattern are laminated on a substrate,
A film pattern substrate, wherein the second film pattern is formed so as to cover a side part and an upper part of the first film pattern. The film pattern substrate according to claim 13,
A film pattern substrate, wherein the bottom of the first film pattern is covered with a third film pattern. The film pattern substrate according to claim 14,
The film pattern substrate, wherein the third film pattern is formed of the same material as the second film pattern.

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