JP4453651B2 - Active matrix substrate manufacturing method, electro-optical device, and electronic apparatus - Google Patents

Description

  The present invention relates to an active matrix substrate manufacturing method, an electro-optical device, and an electronic apparatus.

  2. Description of the Related Art Conventionally, a photolithography method has been frequently used as a method for manufacturing a fine wiring pattern such as a semiconductor integrated circuit. On the other hand, Patent Document 1, Patent Document 2, and the like disclose a method using a droplet discharge method. The technologies disclosed in these publications form a wiring pattern by disposing (applying) a material on a pattern forming surface by discharging a functional liquid containing a pattern forming material from a droplet discharge head onto a substrate. It is said to be very effective, such as being able to handle a variety of small-volume production.

By the way, in recent years, the density of circuits constituting a device has been increased, and for example, further miniaturization and thinning of wiring patterns are required.
However, when such a fine wiring pattern is to be formed by the above-described method using the droplet discharge method, it is particularly difficult to sufficiently obtain the accuracy of the wiring width. Therefore, in Patent Document 3 and Patent Document 4, a bank which is a partition member is provided on a substrate, and a surface treatment is performed so that the upper portion of the bank is liquid repellent and the other portions are lyophilic. Is described.
By using this technology, the width of the wiring pattern can be defined by the width between banks even if it is a thin line, and even if a part of the ejected droplets falls on the bank, the liquid repellent bank It can be made to flow down to the lyophilic part of the groove between the banks.

On the other hand, the bank is formed using a photolithographic method, which may lead to high costs. Therefore, a liquid droplet discharge method is used for a lyophilic portion of a substrate on which a pattern of a lyophobic portion and a lyophilic portion is previously formed. It has also been proposed to selectively discharge a liquid material (functional liquid). In this case, since the liquid material in which the conductive fine particles are dispersed easily accumulates in the lyophilic portion, it is possible to form the wiring pattern while maintaining the positional accuracy without forming the bank.
Japanese Patent Laid-Open No. 11-274671 JP 2000-216330 A JP-A-9-203803 Japanese Patent Laid-Open No. 9-230129

However, the following problems exist in the conventional technology as described above.
If there is a small difference in wettability (affinity) between the liquid-repellent part and the lyophilic part, there is a possibility that even if a droplet on the bank is repelled, it does not spread into the groove and spread. is there.
In addition, when the droplet diameter is larger than the groove width, it may be considered that the droplet remains on the groove.
On the other hand, even when using a substrate on which the liquid-repellent part and the lyophilic part are patterned, if the difference in wettability (affinity) with respect to the liquid droplet is small between the liquid-repellent part and the lyophilic part, There is a possibility that even if the droplet on the part is repelled, it does not spread sufficiently in the lyophilic part.

  The present invention has been made in consideration of the above points, and an active matrix substrate manufacturing method, an electro-optical device, and a method for making a thin line by surely spreading and spreading a landed droplet in a groove, and An object is to provide electronic equipment.

In order to achieve the above object, the present invention employs the following configuration.
The manufacturing method of the active matrix substrate of the present invention includes a first step of forming a gate wiring on the substrate, a second step of forming a gate insulating film on the gate wiring in the manufacturing method of the active matrix substrate, A third step of stacking a semiconductor layer through the gate insulating film; a fourth step of forming a source electrode and a drain electrode on the semiconductor layer on the gate insulating film; and the source electrode and the drain A fifth step of disposing an insulating material on the electrode; and a sixth step of forming a pixel electrode on the insulating material, wherein at least one of the first step and the fourth step In one step , a functional area to which the functional liquid is applied, and a bank formed to surround the coated area, the contact angle of the functional liquid with respect to the coated area, and the bank The functional liquid is discharged onto a substrate having a difference from the contact angle of the functional liquid of 40 ° or more, and a groove width between the banks smaller than the diameter of the discharged liquid of the functional liquid. In the first step, the surface of the bank surrounding the coated region when forming the gate wiring and the surface of the gate wiring are formed flush with each other, and in the fifth step, the source electrode and the drain electrode are formed. The surface of the bank surrounding the coated area in forming and the surface of the insulating material are formed flush with each other.

Therefore, in the present invention, even when a part of the discharged functional liquid is placed on the bank, the functional liquid can surely enter the application area between the banks due to the fluidity of the functional liquid or capillary action. Thus, even if the groove is narrower than the droplet, it can be filled with the liquid material to obtain a fine line pattern defined by the width between the banks. Further, the contact angle of the functional liquid with respect to the coated area is preferably 15 ° or less. In this case, the functional liquid in the coated area is more easily spread on the substrate, and the coated area can be embedded more uniformly. Therefore, it is possible to integrate the functional liquid discharged at intervals in the region to be coated without being divided, and it is possible to prevent the occurrence of defects such as disconnection.
In addition, according to the present invention, it is possible to obtain a thin active matrix substrate in which a thin line pattern is formed without degradation of quality such as disconnection in the gate wiring, the source electrode, the drain electrode, and the pixel electrode.

  As a method for increasing the contact angle with respect to the bank, a structure in which surface modification is performed by plasma treatment or fluorine or a fluorine compound is contained can be employed. When plasma treatment is performed, the liquid repellency can be controlled by adjusting the treatment time.

An electro-optical device according to the present invention includes the above active matrix substrate.
According to another aspect of the invention, there is provided an electronic apparatus including the above-described electro-optical device.
Accordingly, it is possible to obtain a small and thin electro-optical device and electronic apparatus having no thin line pattern and having a fine line pattern.

Hereinafter, embodiments of an active matrix substrate manufacturing method, an electro-optical device, and an electronic apparatus according to the present invention will be described with reference to FIGS.
(First embodiment)
In the present embodiment, the wiring pattern (pattern) ink (conductive liquid) containing conductive fine particles is ejected in droplets from the nozzles of the liquid ejection head by the droplet ejection method, and is formed on the substrate with a conductive film. An example of forming a wiring pattern will be described.

This wiring pattern ink is composed of a dispersion in which conductive fine particles are dispersed in a dispersion medium, or a solution in which an organic silver compound or silver oxide nanoparticles are dispersed in a solvent (dispersion medium).
In the present embodiment, as the conductive fine particles, for example, metal fine particles containing any one of gold, silver, copper, palladium, and nickel, these oxides, organic silver compounds, conductive polymers, Superconductor fine particles are used.
These conductive fine particles can be used by coating the surface with an organic substance or the like in order to improve dispersibility.
The particle diameter of the conductive fine particles is preferably 1 nm or more and 0.1 μm or less. If it is larger than 0.1 μm, there is a possibility that clogging may occur in the nozzle of the liquid discharge head described later. On the other hand, if it is smaller than 1 nm, the volume ratio of the coating agent to the conductive fine particles becomes large, and the ratio of the organic matter in the obtained film becomes excessive.

  The dispersion medium is not particularly limited as long as it can disperse the conductive fine particles and does not cause aggregation. For example, in addition to water, alcohols such as methanol, ethanol, propanol, butanol, n-heptane, n-octane, decane, dodecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2- Methoxyethyl) ether, ether compounds such as p-dioxane, propylene carbonate, γ- Butyrolactone, N- methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, can be exemplified polar compounds such as cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferred from the viewpoints of fine particle dispersibility and dispersion stability, and ease of application to the droplet discharge method (inkjet method). More preferred dispersion media include water and hydrocarbon compounds.

  The surface tension of the conductive fine particle dispersion is preferably in the range of 0.02 N / m to 0.07 N / m. When the liquid is ejected by the ink jet method, if the surface tension is less than 0.02 N / m, the wettability of the ink composition to the nozzle surface increases, and thus flight bending tends to occur, exceeding 0.07 N / m. Since the meniscus shape at the nozzle tip is not stable, it becomes difficult to control the discharge amount and the discharge timing. In order to adjust the surface tension, a small amount of a surface tension regulator such as a fluorine-based, silicone-based, or nonionic-based material may be added to the dispersion within a range that does not significantly reduce the contact angle with the substrate. The nonionic surface tension modifier improves the wettability of the liquid to the substrate, improves the leveling property of the film, and helps prevent the occurrence of fine irregularities in the film. The surface tension modifier may contain an organic compound such as alcohol, ether, ester, or ketone, if necessary.

  The viscosity of the dispersion is preferably 1 mPa · s to 50 mPa · s. When a liquid material is ejected as droplets using the inkjet method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of the ink, and if the viscosity is greater than 50 mPa · s, the nozzle hole The clogging frequency of the liquid becomes high, and it becomes difficult to smoothly discharge the droplets.

  Various substrates such as glass, quartz glass, Si wafer, plastic film, and metal plate can be used as the substrate on which the wiring pattern is formed. Also included are those in which a semiconductor film, a metal film, a dielectric film, an organic film or the like is formed as a base layer on the surface of these various material substrates.

  Here, examples of the discharge technique of the droplet discharge method include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method. In the charge control method, a charge is applied to a material by a charging electrode, and the flight direction of the material is controlled by a deflection electrode and discharged from a nozzle. In addition, the pressurized vibration method applies an ultra-high pressure of about 30 kg / cm 2 to the material and discharges the material to the nozzle tip side. If no control voltage is applied, the material goes straight and is discharged from the nozzle. When a control voltage is applied, electrostatic repulsion occurs between the materials, and the materials are scattered and are not discharged from the nozzle. The electromechanical conversion method utilizes the property that a piezoelectric element (piezoelectric element) is deformed by receiving a pulse-like electric signal. The piezoelectric element is deformed through a flexible substance in a space where material is stored. Pressure is applied, and the material is extruded from this space and discharged from the nozzle.

  In the electrothermal conversion method, a material is rapidly vaporized by a heater provided in a space in which the material is stored to generate bubbles, and the material in the space is discharged by the pressure of the bubbles. In the electrostatic attraction method, a minute pressure is applied in a space in which the material is stored, a meniscus of the material is formed on the nozzle, and an electrostatic attractive force is applied in this state before the material is drawn out. In addition to this, techniques such as a system that uses a change in the viscosity of a fluid due to an electric field and a system that uses a discharge spark are also applicable. The droplet discharge method has an advantage that the use of the material is less wasteful and a desired amount of the material can be accurately disposed at a desired position. The amount of one drop of the liquid material (fluid) discharged by the droplet discharge method is, for example, 1 to 300 nanograms.

Next, a device manufacturing apparatus used when manufacturing a device according to the present invention will be described.
As this device manufacturing apparatus, a droplet discharge apparatus (inkjet apparatus) that manufactures a device by discharging droplets from a droplet discharge head onto a substrate is used.

FIG. 1 is a perspective view showing a schematic configuration of the droplet discharge device IJ.
The droplet discharge device IJ includes a droplet discharge head 1, an X-axis direction drive shaft 4, a Y-axis direction guide shaft 5, a control device CONT, a stage 7, a cleaning mechanism 8, a base 9, and a heater. 15.
The stage 7 supports the substrate P on which ink (liquid material) is provided by the droplet discharge device IJ, and includes a fixing mechanism (not shown) that fixes the substrate P at a reference position.

  The droplet discharge head 1 is a multi-nozzle type droplet discharge head including a plurality of discharge nozzles, and the longitudinal direction and the Y-axis direction are made to coincide. The plurality of ejection nozzles are provided on the lower surface of the droplet ejection head 1 at regular intervals along the Y-axis direction. From the ejection nozzle of the droplet ejection head 1, the ink containing the conductive fine particles described above is ejected onto the substrate P supported by the stage 7.

An X-axis direction drive motor 2 is connected to the X-axis direction drive shaft 4. The X-axis direction drive motor 2 is a stepping motor or the like, and rotates the X-axis direction drive shaft 4 when a drive signal in the X-axis direction is supplied from the control device CONT. When the X-axis direction drive shaft 4 rotates, the droplet discharge head 1 moves in the X-axis direction.
The Y-axis direction guide shaft 5 is fixed so as not to move with respect to the base 9. The stage 7 includes a Y-axis direction drive motor 3. The Y-axis direction drive motor 3 is a stepping motor or the like, and moves the stage 7 in the Y-axis direction when a drive signal in the Y-axis direction is supplied from the control device CONT.

The control device CONT supplies the droplet discharge head 1 with a voltage for controlling droplet discharge. In addition, a drive pulse signal for controlling movement of the droplet discharge head 1 in the X-axis direction is supplied to the X-axis direction drive motor 2, and a drive pulse signal for controlling movement of the stage 7 in the Y-axis direction is supplied to the Y-axis direction drive motor 3. Supply.
The cleaning mechanism 8 cleans the droplet discharge head 1. The cleaning mechanism 8 is provided with a Y-axis direction drive motor (not shown). By driving the drive motor in the Y-axis direction, the cleaning mechanism moves along the Y-axis direction guide shaft 5. The movement of the cleaning mechanism 8 is also controlled by the control device CONT.
Here, the heater 15 is a means for heat-treating the substrate P by lamp annealing, and performs evaporation and drying of the solvent contained in the liquid material applied on the substrate P. The heater 15 is also turned on and off by the control device CONT.

  The droplet discharge device IJ discharges droplets onto the substrate P while relatively scanning the droplet discharge head 1 and the stage 7 that supports the substrate P. Here, in the following description, the X-axis direction is a scanning direction, and the Y-axis direction orthogonal to the X-axis direction is a non-scanning direction. Therefore, the discharge nozzles of the droplet discharge head 1 are provided at regular intervals in the Y-axis direction, which is the non-scanning direction. In FIG. 1, the droplet discharge head 1 is arranged at a right angle to the traveling direction of the substrate P, but the angle of the droplet discharging head 1 is adjusted so as to intersect the traveling direction of the substrate P. It may be. In this way, the pitch between the nozzles can be adjusted by adjusting the angle of the droplet discharge head 1. Further, the distance between the substrate P and the nozzle surface may be arbitrarily adjusted.

FIG. 2 is a diagram for explaining the principle of discharging a liquid material by a piezo method.
In FIG. 2, a piezo element 22 is installed adjacent to a liquid chamber 21 for storing a liquid material (wiring pattern ink, functional liquid). The liquid material is supplied to the liquid chamber 21 via a liquid material supply system 23 including a material tank that stores the liquid material. The piezo element 22 is connected to a drive circuit 24, and a voltage is applied to the piezo element 22 via the drive circuit 24 to deform the piezo element 22, whereby the liquid chamber 21 is deformed and the liquid material is discharged from the nozzle 25. Is discharged. In this case, the amount of distortion of the piezo element 22 is controlled by changing the value of the applied voltage. Further, the strain rate of the piezo element 22 is controlled by changing the frequency of the applied voltage. Since the droplet discharge by the piezo method does not apply heat to the material, it has an advantage of hardly affecting the composition of the material.

Next, as an example of an embodiment of the wiring pattern forming method of the present invention, a method for forming a conductive film wiring on a substrate will be described with reference to FIG. In the wiring pattern forming method according to the present embodiment, the above-described wiring pattern ink is disposed on the substrate P, and a conductive film pattern for wiring is formed on the substrate P. It is roughly composed of a process, a liquid repellent treatment process, a material arrangement process, an intermediate drying process, and a firing process.
Hereinafter, each process will be described in detail.

(Bank formation process)
The bank is a member that functions as a partition member, and the bank can be formed by an arbitrary method such as a lithography method or a printing method. For example, when using a lithography method, an organic photosensitive material is applied on the substrate P according to the height of the bank by a predetermined method such as spin coating, spray coating, roll coating, die coating, dip coating, and the like. A resist layer is applied on top. Then, a mask is applied according to the bank shape (wiring pattern), and the resist is exposed and developed to leave the resist according to the bank shape. Finally, the bank material other than the mask is removed by etching. Alternatively, the bank (convex portion) may be formed of two or more layers in which the lower layer is made of an inorganic or organic material and is lyophilic with respect to the functional liquid, and the upper layer is made of an organic material and exhibits liquid repellency.
As a result, as shown in FIG. 3A, banks B and B having a width of, for example, 10 μm are formed so as to surround a groove (application region) 31 that is a region where a wiring pattern is to be formed.
The substrate P is subjected to HMDS treatment (a method of applying (CH ₃ ) ₃ SiNHSi (CH ₃ ) ₃ in a vapor state) as a surface modification treatment before applying the organic material. The illustration thereof is omitted in FIG.

  The organic material for forming the bank may be a material that originally exhibits liquid repellency with respect to a liquid material, or, as described later, can be made liquid repellency by plasma treatment and has good adhesion to the base substrate, and patterning by photolithography. An insulating organic material that can be easily removed may be used. For example, a polymer material such as an acrylic resin, a polyimide resin, an olefin resin, or a melamine resin can be used.

(Residue treatment process (lyophilic treatment process))
Next, in order to remove a resist (organic matter) residue at the time of bank formation between banks, the substrate P is subjected to a residue treatment.
As the residue treatment, an ultraviolet (UV) irradiation treatment for performing a residue treatment by irradiating ultraviolet rays, an O ₂ plasma treatment using oxygen as a treatment gas in the air atmosphere, or the like can be selected. Here, the O ₂ plasma treatment is performed. To do.

Specifically, the substrate P is irradiated with oxygen in a plasma state from a plasma discharge electrode. As conditions for the O ₂ plasma treatment, for example, the plasma power is 50 to 1000 W, the oxygen gas flow rate is 50 to 100 ml / min, the plate conveyance speed of the substrate P with respect to the plasma discharge electrode is 0.5 to 10 mm / sec, and the substrate temperature is 70. ˜90 ° C.
When the substrate P is a glass substrate, its surface is lyophilic with respect to the wiring pattern forming material. However, as in the present embodiment, O ₂ plasma treatment or ultraviolet irradiation treatment is used for residue treatment. The lyophilicity of the groove part 31 can be improved. In the present embodiment, the plasma processing conditions are adjusted so that the contact angle of the groove 31 with respect to the organic silver compound (described later) used as the wiring pattern forming material is 15 ° or less (for example, the substrate P is transported at a slower speed to generate plasma). Increase processing time).

(Liquid repellency treatment process)
Subsequently, the bank B is subjected to a liquid repellency treatment to impart liquid repellency to the surface thereof. As the lyophobic treatment, for example, a plasma treatment method (CF ₄ plasma treatment method) using tetrafluoromethane as a treatment gas in an air atmosphere can be employed. The conditions of the CF ₄ plasma treatment are, for example, a plasma power of 100 to 800 W, a tetrafluoromethane gas flow rate of 50 to 100 ml / min, a substrate transport speed to the plasma discharge electrode of 0.5 to 1020 mm / sec, and a substrate temperature of 70 to 90. ℃.
The processing gas is not limited to tetrafluoromethane (carbon tetrafluoride), and other fluorocarbon gases can also be used. In the present embodiment, the plasma processing conditions are adjusted so that the contact angle of the organic silver compound used as the wiring pattern forming material with respect to the bank B is 40 ° or more than the contact angle with respect to the groove 31 (for example, the transfer speed of the substrate P). Slow down the plasma treatment time).

By performing such a liquid repellency treatment, a fluorine group is introduced into the resin constituting the banks B and B, and a high liquid repellency is imparted to the groove 31. The O ₂ plasma treatment as the lyophilic treatment described above may be performed before the formation of the bank B. However, acrylic resin, polyimide resin, and the like are more fluorinated when pre-treated with O ₂ plasma ( Since it has a property of being easily made liquid repellent, it is preferable to perform O ₂ plasma treatment after the bank B is formed.
Although the lyophobic treatment for banks B and B has some influence on the surface of the substrate P previously lyophilicized, the introduction of fluorine groups by the lyophobic treatment is particularly effective when the substrate P is made of glass or the like. Therefore, the lyophilicity, that is, the wettability of the substrate P is not substantially impaired.
Further, the banks B and B may be formed of a material having liquid repellency (for example, a resin material having a fluorine group), so that the liquid repellency treatment may be omitted.
A thin film patterning substrate is formed by the bank forming process, the residue processing process, and the lyophobic process.

(Material placement process and intermediate drying process)
Next, the wiring pattern forming material is applied to the groove 31 on the substrate P by using a droplet discharge method by the droplet discharge device IJ. Here, an ink (functional liquid) using an organic silver compound as a conductive material and diethylene glycol diethyl ether as a solvent (dispersion medium) is discharged.

  That is, in the material arranging step, as shown in FIG. 3B, the liquid material including the wiring pattern forming material is discharged as droplets 32 from the liquid discharge head 1, and the droplets 32 are discharged onto the grooves 31 on the substrate P. To place. The droplet discharge conditions were an ink weight of 4 ng / dot and an ink speed (discharge speed) of 5 to 7 m / sec. In this example, it is assumed that the diameter D of the droplet 32 is larger than the width W of the groove 31 by the banks B and B (in this example, the width at the opening of the groove 31). Specifically, the width W at the opening of the groove 31 is about 10 μm or less, and the diameter D of the droplet 32 is about 15 to 20 μm.

  When such a droplet 32 is discharged from the droplet discharge head 1 and a liquid material is disposed in the groove portion 31, the droplet 32 has a diameter D larger than the width W of the groove portion 31, so that FIG. A part of it is placed on the banks B and B as shown by the middle two-dot chain line. However, since the surfaces of the banks 32 and 32 are liquid repellent and tapered, the portion of the liquid droplet 32 on the banks B and B is repelled from the banks B and B, and As a result of the capillary portion of the groove portion 31 flowing down into the groove portion 31, the liquid droplet 32 enters the groove portion 31 as shown by the solid line in FIG.

  Further, the liquid material 32a discharged into the groove portion 31 or flowing down from the banks B and B is more easily spread because the substrate P has been subjected to the lyophilic treatment, whereby the liquid material 32a is more uniformly distributed. 31 is embedded. Therefore, even though the width W of the groove 31 is narrower (smaller) than the diameter D of the liquid droplet 32, the liquid droplet 32 (liquid 32a) discharged toward the groove 31 enters the groove 31 well. This will embed this evenly.

(Intermediate drying process)
After the droplets are discharged onto the substrate P, a drying process (intermediate drying) is performed as necessary to remove the dispersion medium. The drying process can be performed, for example, by a heating process using a normal hot plate or an electric furnace that heats the substrate P. In this embodiment, for example, 180 ° C. heating is performed for about 60 minutes. This heating is not necessarily performed in the air, such as in an N ₂ atmosphere.
This drying process can also be performed by lamp annealing.
The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used as a light source. In general, these light sources have an output in the range of 10 W to 5000 W, but in the present embodiment, a range of 100 W to 1000 W is sufficient.
By repeating this intermediate drying step and the material arranging step, it is possible to form a desired film thickness.

(Baking process)
For example, in the case of an organic silver compound, the conductive material after the discharging step needs to be heat treated to remove the organic component of the organic silver compound and leave silver particles in order to obtain conductivity. For this reason, the substrate after the discharge process is subjected to heat treatment and / or light treatment.

The heat treatment and / or light treatment is usually performed in the air, but may be performed in an inert gas atmosphere such as nitrogen, argon, helium, etc., if necessary. The heat treatment and / or light treatment temperature includes the boiling point (vapor pressure) of the dispersion medium, the type and pressure of the atmospheric gas, the thermal behavior such as the dispersibility and oxidation of fine particles and organic silver compounds, and the presence and amount of coating agent. It is appropriately determined in consideration of the heat-resistant temperature of the substrate.
For example, in order to remove the organic component of the organic silver compound, it is necessary to bake at about 200 ° C. Moreover, when using a board | substrate, such as a plastics, it is preferable to carry out at room temperature or more and 100 degrees C or less.
The conductive material (organic silver compound) after the discharging step is converted into a conductive film by the remaining silver particles by the above steps, so that the conductivity as a continuous film is obtained as shown in FIG. A pattern, that is, a wiring pattern (thin film pattern) 33 is obtained.

(Example)
The glass substrate on which the bank was formed was implemented under the conditions that the plasma power was 550 W, the tetrafluoromethane gas flow rate was 100 ml / min, the He gas flow rate was 10 L / min, and the substrate transport speed to the plasma discharge electrode was 2 mm / sec. The contact angle of the organic silver compound (diethylene glycol dimethyl ether solvent) was 10 ° or less with respect to bank B before the liquid repellent treatment, whereas it was 66.2 ° with respect to bank B after the liquid repellent treatment. became. The contact angle of pure water was 69.3 ° with respect to bank B before the lyophobic treatment, whereas it was 104.1 ° with respect to bank B after the lyophobic treatment. In any case, the contact angle of the glass substrate with respect to the groove portion 31 was 15 ° or less, and the difference in contact angle between the groove portion 31 and the bank B was 40 ° or more.

  Further, when droplets of the organic silver compound were discharged using the above-described droplet discharge device IJ, when the width W of the groove 31 was 100 μm in the substrate (bank material; organic photosensitive material) before the liquid repellent treatment, Although the liquid material could be embedded in the groove portion 31, it could not be sufficiently embedded when the width W was 75 μm. On the other hand, the substrate after the lyophobic treatment could be embedded even if the width W was as small as 25 μm and 10 μm.

  As described above, in the present embodiment, when the difference in contact angle between the liquid groove 31 and the bank B as the patterning substrate is set to 40 ° or more, a part of the liquid droplets is placed on the bank B. However, it is possible to enter the groove portion 31, and a fine line pattern defined by the width between the banks B and B can be obtained. In particular, in the present embodiment, by setting the contact angle of the liquid material to the groove portion 31 to be 15 ° or less, it is possible to realize thinning by filling the liquid material with the liquid material even if the groove is narrower than the droplet. The liquid material 31 is more easily spread and spread on the substrate P, and the grooves 31 can be embedded more uniformly. Therefore, it is possible to integrate the liquid material discharged at intervals without being divided in the groove portion 31, to prevent the occurrence of defects such as disconnection, and to improve the quality as a device. It is.

(Second Embodiment)
Next, as a second embodiment of the wiring pattern forming method (pattern forming method) of the present invention, a method for forming a conductive film wiring on a substrate will be described with reference to FIG. In the wiring pattern forming method according to the present embodiment, the wiring pattern ink described above is disposed on the substrate P, and a conductive film pattern (conductive film) for wiring is formed on the substrate P. It is roughly composed of a processing step, a material placement step, and a heat treatment / light treatment step.
Hereinafter, each process will be described in detail.

(Surface treatment process)
The surface treatment process is roughly divided into a lyophobic treatment process for lyophobic the substrate surface and a lyophilic treatment process for lyophilicity of the lyophobic substrate surface.
In the liquid repellent treatment step, the surface of the substrate on which the conductive film wiring is formed is processed to be liquid repellent with respect to the liquid material. Specifically, the surface treatment is performed on the substrate so that the contact angle of the liquid material containing the conductive fine particles is 40 ° or more, preferably 50 ° or more, with the difference between the contact angle with the application region described later. Apply.
As a method for controlling the liquid repellency (wetting property) of the surface, for example, a method of forming a self-assembled film on the surface of the substrate can be employed.

In the self-assembled film forming method, a self-assembled film made of an organic molecular film or the like is formed on the surface of a substrate on which conductive film wiring is to be formed.
The organic molecular film for treating the substrate surface has a functional group that can bind to the substrate and a functional group that modifies the surface properties of the substrate, such as a lyophilic group or a liquid repellent group, on the opposite side (controls the surface energy). And a carbon straight chain or a partially branched carbon chain connecting these functional groups, and is bonded to a substrate and self-assembles to form a molecular film, for example, a monomolecular film.

  Here, the self-assembled film is composed of a binding functional group capable of reacting with constituent atoms such as an underlayer of the substrate and other linear molecules, and has extremely high orientation due to the interaction of the linear molecules. It is a film formed by orienting a compound. Since this self-assembled film is formed by orienting single molecules, the film thickness can be extremely reduced, and the film is uniform at the molecular level. That is, since the same molecule is located on the surface of the film, uniform and excellent liquid repellency and lyophilicity can be imparted to the surface of the film.

By using, for example, fluoroalkylsilane as the compound having high orientation, each compound is oriented so that the fluoroalkyl group is located on the surface of the film, and a self-assembled film is formed. Liquid repellency is imparted.
Examples of compounds that form a self-assembled film include heptadecafluoro-1,1,2,2 tetrahydrodecyltriethoxysilane, heptadecafluoro-1,1,2,2 tetrahydrodecyltrimethoxysilane, heptadecafluoro-1 , 1,2,2 tetrahydrodecyltrichlorosilane, tridecafluoro-1,1,2,2 tetrahydrooctyltriethoxysilane, tridecafluoro-1,1,2,2 tetrahydrooctyltrimethoxysilane, tridecafluoro-1 , 1,2,2 tetrahydrooctyltrichlorosilane, trifluoropropyltrimethoxysilane, and other fluoroalkylsilanes (hereinafter referred to as “FAS”). These compounds may be used alone or in combination of two or more. Note that by using FAS, adhesion to the substrate and good liquid repellency can be obtained.

FAS is generally represented by the structural formula RnSiX _(4-n) . Here, n represents an integer of 1 to 3, and X is a hydrolyzable group such as a methoxy group, an ethoxy group, or a halogen atom. R is a fluoroalkyl group, and has a structure of (CF ₃ ) (CF ₂ ) x (CH ₂ ) y (where x represents an integer of 0 to 10 and y represents an integer of 0 to 4). And when a plurality of R or X are bonded to Si, each R or X may be the same or different. The hydrolyzable group represented by X forms silanol by hydrolysis, reacts with the hydroxyl group of the base of the substrate (glass, silicon), and bonds to the substrate with a siloxane bond. On the other hand, since R has a fluoro group such as (CF ₂ ) on the surface, the base surface of the substrate is modified to a surface that does not wet (surface energy is low).

A self-assembled film made of an organic molecular film or the like is formed on a substrate by placing the above raw material compound and the substrate in the same sealed container and leaving them at room temperature for about 2 to 3 days. Further, by holding the entire sealed container at 100 ° C., it is formed on the substrate in about 3 hours. These are formation methods from the gas phase, but a self-assembled film can also be formed from the liquid phase. For example, the self-assembled film is formed on the substrate by immersing the substrate in a solution containing the raw material compound, washing, and drying.
Note that before the self-assembled film is formed, it is desirable to pre-treat the substrate surface by irradiating the substrate surface with ultraviolet light or washing with a solvent.
Thus, by performing the self-organizing film forming method, the liquid repellent film F is formed on the surface of the substrate P as shown in FIG.

Next, the wettability of the substrate surface is controlled by applying the wiring pattern forming material and relaxing the lyophobic property of the coated area where the wiring pattern is to be formed to impart lyophilicity (lyophilic treatment). .
Hereinafter, the lyophilic process will be described.
Examples of the lyophilic treatment include a method of irradiating ultraviolet light having a wavelength of 170 to 400 nm. At this time, by irradiating with ultraviolet light using a mask corresponding to the wiring pattern, only the wiring portion in the liquid-repellent film F once formed is partially altered to reduce liquid repellency and make it lyophilic. be able to. That is, by performing the lyophobic process and the lyophilic process, as shown in FIG. 4 (b), the substrate P has a lyophilic area at a position where a wiring pattern is to be formed. H1 and a liquid repellent region H2 composed of the liquid repellent film F surrounding the coated region H1 are formed.
The degree of relaxation of liquid repellency can be adjusted by the irradiation time of ultraviolet light, but can also be adjusted by a combination with the intensity of ultraviolet light, wavelength, heat treatment (heating), or the like. In the present embodiment, the contact angle with respect to the application area H1 is such that the difference between the contact angle with respect to the application area H1 of the liquid material containing conductive fine particles and the contact angle with respect to the liquid repellent area H2 is 40 ° or more. Irradiate with ultraviolet light under the condition of 15 ° or less.

(Material placement process)
Next, the wiring pattern forming material is applied to the application region H1 on the substrate P by using a droplet discharge method by the droplet discharge device IJ. Here, as a functional liquid (wiring pattern ink), a dispersion liquid in which conductive fine particles are dispersed in a solvent (dispersion medium) is discharged. The conductive fine particles used here include fine particles of conductive polymer or superconductor in addition to metal fine particles containing any of gold, silver, copper, palladium, and nickel.

That is, in the material arranging step, as shown in FIG. 4C, the liquid material including the wiring pattern forming material is ejected as droplets from the liquid ejection head 1, and the droplets are applied to the application region H1 on the substrate P. To place. The droplet discharge conditions were an ink weight of 7 ng / dot and an ink speed (discharge speed) of 5 to 7 m / sec.
At this time, since the liquid repellent area H2 is provided with liquid repellency, even if a part of the ejected droplets falls on the liquid repellent area H2, the liquid repellent area H2 is repelled from the liquid repellent area H2, and FIG. As shown in the drawing, it accumulates in the coated area H1 between the liquid repellent areas H2. Furthermore, since the coated region H1 is given lyophilicity, the discharged liquid material is more likely to spread in the coated region H1, and thereby the liquid material is more separated within a predetermined position without being divided. The coated area H1 can be uniformly embedded.

(Heat treatment / light treatment process)
The conductive material after the discharging step needs to completely remove the dispersion medium in order to improve electrical contact between the fine particles. Further, when a coating material such as an organic material is coated on the surface of the conductive fine particles in order to improve dispersibility, it is also necessary to remove this coating material. For this reason, the substrate after the discharge process is subjected to heat treatment and / or light treatment.

  The heat treatment and / or light treatment is usually performed in the air, but may be performed in an inert gas atmosphere such as nitrogen, argon, or helium as necessary. The treatment temperature of the heat treatment and / or the light treatment depends on the boiling point (vapor pressure) of the dispersion medium, the type and pressure of the atmospheric gas, the thermal behavior such as the dispersibility and oxidation of the fine particles, the presence and amount of the coating agent, It is determined appropriately in consideration of the heat resistant temperature.

For example, in order to remove the coating agent made of organic matter, it is necessary to bake at about 300 ° C. Moreover, when using a board | substrate, such as a plastics, it is preferable to carry out at room temperature or more and 100 degrees C or less.
The heat treatment and / or light treatment may be performed using lamp annealing in addition to general heat treatment using a heating means such as a hot plate or an electric furnace. The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used. These light sources generally have a power output in the range of 10 W to 5000 W, but in the present embodiment, a range of 100 W to 1000 W is sufficient.
By the heat treatment and / or light treatment, electrical contact between the fine particles is ensured and converted into a conductive film.
Through the series of steps described above, a linear conductive film pattern (conductive film wiring) is formed on the substrate.

  In this embodiment, the difference in contact angle between the functional liquid application area H1 and the liquid repellent area H2 as a patterning substrate is set to 40 ° or more, so that a part of the liquid droplets is placed on the liquid repellent area H2. Even in this case, it is possible to flow into the coated area H1, and a fine line pattern defined by the width between the liquid repellent areas H2 can be obtained. In particular, in the present embodiment, by setting the contact angle of the liquid material to the application region H1 to 15 ° or less, the liquid material in the application region H1 is more easily spread on the substrate P, and more uniformly applied. The region H1 can be embedded. Therefore, it is possible to integrate the liquid material discharged at intervals without being divided in the coated region H1, and it is possible to prevent the occurrence of defects such as disconnection, and to improve the quality as a device. Is possible.

(Third embodiment)
As a third embodiment, a liquid crystal display device which is an example of the electro-optical device of the invention will be described. FIG. 5 is a plan view of the liquid crystal display device according to the present invention as seen from the counter substrate side shown together with each component, and FIG. 6 is a cross-sectional view taken along the line HH ′ of FIG. FIG. 7 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display region of the liquid crystal display device, and FIG. 8 is a partial enlarged cross-sectional view of the liquid crystal display device. In each drawing used in the following description, the scale is different for each layer and each member so that each layer and each member can be recognized on the drawing.

  5 and 6, the liquid crystal display device (electro-optical device) 100 according to the present embodiment is bonded to a pair of TFT array substrate 10 and counter substrate 20 by a sealing material 52 which is a photocurable sealing material. The liquid crystal 50 is sealed and held in the region partitioned by the sealing material 52. The sealing material 52 is formed in a frame shape that is closed in a region within the substrate surface, does not include a liquid crystal injection port, and does not have a trace sealed with the sealing material.

  A peripheral parting 53 made of a light shielding material is formed in a region inside the region where the sealing material 52 is formed. A data line driving circuit 201 and a mounting terminal 202 are formed along one side of the TFT array substrate 10 in a region outside the sealing material 52, and the scanning line driving circuit 204 is formed along two sides adjacent to the one side. Is formed. On the remaining side of the TFT array substrate 10, a plurality of wirings 205 are provided for connecting between the scanning line driving circuits 204 provided on both sides of the image display area. Further, at least one corner of the counter substrate 20 is provided with an inter-substrate conductive material 206 for establishing electrical continuity between the TFT array substrate 10 and the counter substrate 20.

Instead of forming the data line driving circuit 201 and the scanning line driving circuit 204 on the TFT array substrate 10, for example, a TAB (Tape Automated Bonding) substrate on which a driving LSI is mounted and a peripheral portion of the TFT array substrate 10 The terminal group formed in the above may be electrically and mechanically connected via an anisotropic conductive film. In the liquid crystal display device 100, the type of liquid crystal 50 to be used, that is, an operation mode such as a TN (Twisted Nematic) mode, a C-TN method, a VA method, an IPS method, or a normally white mode / normally black mode. According to the above, a retardation plate, a polarizing plate and the like are arranged in a predetermined direction, but the illustration is omitted here.
Further, when the liquid crystal display device 100 is configured for color display, in the counter substrate 20, for example, red (R), green (G), A blue (B) color filter is formed together with the protective film.

  In the image display region of the liquid crystal display device 100 having such a structure, as shown in FIG. 7, a plurality of pixels 100a are configured in a matrix, and each of these pixels 100a has a pixel switching region. TFT (switching element) 30 is formed, and a data line 6 a for supplying pixel signals S 1, S 2,..., Sn is electrically connected to the source of the TFT 30. Pixel signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. . Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured.

  The pixel electrode 19 is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,..., Sn supplied from the data line 6a is obtained by turning on the TFT 30 as a switching element for a certain period. Write to each pixel at a predetermined timing. The pixel signals S1, S2,..., Sn written in the liquid crystal via the pixel electrode 19 in this way are held for a certain period with the counter electrode 121 of the counter substrate 20 shown in FIG. In order to prevent the held pixel signals S1, S2,..., Sn from leaking, a storage capacitor 60 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 19 and the counter electrode 121. For example, the voltage of the pixel electrode 19 is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. Thereby, the charge retention characteristics are improved, and the liquid crystal display device 100 with a high contrast ratio can be realized.

  FIG. 8 is a partial enlarged cross-sectional view of the liquid crystal display device 100 having the bottom gate type TFT 30. In this embodiment, the storage capacitor 60 is constructed above the bottom gate type pixel switching TFT 30. More specifically, on the TFT array substrate 10 (corresponding to the substrate P in the wiring pattern forming method), a gate insulating film is formed on the gate electrode 203a protruding from the scanning line 3a along the data line 6a onto the substrate. The semiconductor layer 210 a is stacked via 42. A portion of the semiconductor layer 210a facing the gate electrode 203a is a channel region. On the semiconductor layer 210a, a source electrode 204a and a drain electrode 204b are formed from the same film as the data line 6a. Junction layers 205a and 205b made of, for example, an n + -type a-Si (amorphous silicon) layer for obtaining an ohmic junction are stacked between the source electrode 204a and the drain electrode 204b and the semiconductor layer 210a, respectively. An insulating etch stop film 208 for protecting the channel is formed on the semiconductor layer 210a in the central portion of the region. On the end portion of the drain electrode 204b, an island-shaped capacitor electrode 222 is laminated via an interlayer insulating film 212. Further, on the capacitor electrode 222, a capacitor line 3b (fixed potential) is interposed via a dielectric film 221. Side capacitance electrodes) are stacked. The capacitor line 3b extends in a stripe shape in the image display area and extends to the outside of the image display area, and is dropped to a fixed potential.

A pixel electrode 19 is disposed above the storage capacitor 60, and an interlayer insulating film 216 is stacked between the capacitor line 3 b and the pixel electrode 19. The pixel electrode 19 and the capacitor electrode 222 are connected via the contact hole 217 opened in the interlayer insulating film 216, and the capacitor electrode 222 is set to the pixel electrode potential. The capacitor electrode 222 is provided with a hole-shaped opening 222 a in a region above the channel region of the TFT 30.
In the TFT having the above configuration, gate lines, source lines, drain lines, and the like can be formed by discharging, for example, silver compound droplets using the above-described droplet discharge device IJ. It is possible to obtain a high-quality liquid crystal display device that is thinned and does not cause defects such as disconnection.

(Fourth embodiment)
In the above embodiment, the TFT 30 is used as a switching element for driving the liquid crystal display device 100. However, the present invention can be applied to, for example, an organic EL (electroluminescence) display device in addition to the liquid crystal display device. An organic EL display device has a structure in which a thin film containing fluorescent inorganic and organic compounds is sandwiched between a cathode and an anode, and excitons are obtained by injecting electrons and holes into the thin film to excite them. It is an element that generates (exciton) and emits light by utilizing light emission (fluorescence / phosphorescence) when the exciton is recombined. Then, on the substrate having the TFT 30 described above, among the fluorescent materials used for the organic EL display element, a material exhibiting each emission color of red, green and blue, that is, a light emitting layer forming material and a hole injection / electron transport layer are provided. A self-luminous full-color EL device can be manufactured by using ink as a material to be formed and patterning each.
The range of the device (electro-optical device) in the present invention includes such an organic EL device, and it is possible to obtain a high-quality organic EL device that is reduced in size and thickness and does not cause defects such as disconnection. Can do.

FIG. 9 is a side sectional view of an organic EL device in which some components are manufactured by the droplet discharge device IJ. The schematic configuration of the organic EL device will be described with reference to FIG.
In FIG. 9, an organic EL device 301 includes an organic EL element 302 including a substrate 311, a circuit element unit 321, a pixel electrode 331, a bank unit 341, a light emitting element 351, a cathode 361 (counter electrode), and a sealing substrate 371. In addition, wiring of a flexible substrate (not shown) and a driving IC (not shown) are connected. The circuit element unit 321 is configured by forming TFTs 30 as active elements on a substrate 311 and arranging a plurality of pixel electrodes 331 on the circuit element unit 321. And the gate wiring 61 which comprises TFT30 is formed with the formation method of the wiring pattern of embodiment mentioned above.

  Bank portions 341 are formed in a lattice shape between the pixel electrodes 331, and light emitting elements 351 are formed in the recess openings 344 generated by the bank portions 341. Note that the light emitting element 351 includes an element that emits red light, an element that emits green light, and an element that emits blue light. Accordingly, the organic EL device 301 realizes full-color display. Yes. The cathode 361 is formed on the entire upper surface of the bank portion 341 and the light emitting element 351, and a sealing substrate 371 is laminated on the cathode 361.

  The manufacturing process of the organic EL device 301 including the organic EL element includes a bank part forming step for forming the bank part 341, a plasma processing step for appropriately forming the light emitting element 351, and a light emitting element formation for forming the light emitting element 351. A process, a counter electrode forming process for forming the cathode 361, and a sealing process for stacking and sealing the sealing substrate 371 on the cathode 361.

The light emitting element forming step is to form the light emitting element 351 by forming the hole injection layer 352 and the light emitting layer 353 on the concave opening 344, that is, the pixel electrode 331. The hole injection layer forming step and the light emitting layer forming step It is equipped with. Then, in the hole injection layer forming step, the liquid material for forming the hole injection layer 352 is discharged onto each pixel electrode 331, and the discharged liquid material is dried to form holes. A first drying step for forming the injection layer 352. The light emitting layer forming step includes a second discharge step of discharging a liquid material for forming the light emitting layer 353 onto the hole injection layer 352, and drying the discharged liquid material to form the light emitting layer 353. And a second drying step to be formed. The light emitting layer 353 is formed of three types of materials corresponding to the three colors of red, green, and blue as described above. Therefore, the second discharge step includes three types of light emitting layers. There are three steps for discharging the material to each.
In the light emitting element forming step, the droplet discharge device IJ can be used in the first discharging step in the hole injection layer forming step and the second discharging step in the light emitting layer forming step.

(Fifth embodiment)
In the above-described embodiment, the gate wiring of the TFT (thin film transistor) is formed using the pattern forming method according to the present invention. However, other components such as a source electrode, a drain electrode, and a pixel electrode are manufactured. Is also possible. Hereinafter, a method for manufacturing a TFT will be described with reference to FIGS.

  As shown in FIG. 10, first, a first-layer bank 511 for providing a groove 511a having a pitch of 1/20 to 1/10 of one pixel pitch on the upper surface of a cleaned glass substrate 510 is based on a photolithography method. Formed. The bank 511 needs to have optical transparency and liquid repellency after formation, and as a material thereof, an inorganic material such as polysilazane as well as a polymer material such as an acrylic resin, a polyimide resin, an olefin resin, and a melamine resin is used. Materials are preferably used.

In order to impart liquid repellency to the formed bank 511, it is necessary to perform CF ₄ plasma treatment or the like (plasma treatment using a gas having a fluorine component). A liquid repellent component (fluorine group or the like) may be filled. In this case, CF ₄ plasma treatment or the like can be omitted.

  It is preferable to ensure that the contact angle of the ejected ink with respect to the bank 511 having the liquid repellency as described above is 40 ° or more and the contact angle with respect to the glass surface is 10 ° or less. That is, as a result of confirmation by the inventors through tests, for example, the contact angle after treatment of the conductive fine particles (tetradecane solvent) is about 54.0 ° (not yet determined) when an acrylic resin system is adopted as the material of the bank 511. In the case of processing, 10 ° or less) can be secured. These contact angles were obtained under the processing conditions of supplying tetrafluoromethane gas at 0.1 L / min under a plasma power of 550 W.

  In the gate scan electrode formation step (first conductive pattern formation step) subsequent to the first layer bank formation step, the conductivity is set so as to fill the groove 511a which is a drawing region partitioned by the bank 511. A gate scan electrode 512 is formed by discharging a droplet containing a material by inkjet. Then, when forming the gate scanning electrode 512, the pattern forming method according to the present invention is applied.

  As the conductive material at this time, Ag, Al, Au, Cu, palladium, Ni, W-si, a conductive polymer, or the like can be suitably used. Since the gate scan electrode 512 formed in this manner is provided with sufficient liquid repellency in the bank 511 in advance, a fine wiring pattern can be formed without protruding from the groove 511a.

  Through the above steps, the first conductive layer A1 made of silver (Ag) having a flat upper surface made up of the bank 511 and the gate scan electrode 512 is formed on the substrate 510.

  In order to obtain a good discharge result in the groove 511a, as shown in FIG. 10, it is preferable to adopt a quasi-taper (taper shape opening toward the discharge source) as the shape of the groove 511a. As a result, the discharged droplets can be made to enter sufficiently deeply.

  Next, as shown in FIG. 11, the gate insulating film 513, the active layer 510, and the contact layer 509 are continuously formed by plasma CVD. A silicon nitride film is formed as the gate insulating film 513, an amorphous silicon film is formed as the active layer 510, and an n + silicon film is formed as the contact layer 509 by changing the source gas and plasma conditions. When the film is formed by the CVD method, a heat history of 300 ° C. to 350 ° C. is required. However, problems related to transparency and heat resistance can be avoided by using an inorganic material for the bank.

  In the second bank forming step subsequent to the semiconductor layer forming step, as shown in FIG. 12, the upper surface of the gate insulating film 513 is 1/20 to 1/10 of one pixel pitch and intersects the groove 511a. A second-layer bank 514 for providing the groove 514a to be formed is formed based on a photolithography method. The bank 514 needs to have optical transparency and liquid repellency after formation, and as a material thereof, an inorganic material such as polysilazane as well as a polymer material such as an acrylic resin, a polyimide resin, an olefin resin, and a melamine resin is used. Materials are preferably used.

In order to impart liquid repellency to the bank 514 after this formation, it is necessary to perform CF ₄ plasma treatment or the like (plasma treatment using a gas having a fluorine component), but instead, the material of the bank 514 itself is repelled beforehand. It is good also as what is filled with liquid components (fluorine group etc.). In this case, CF ₄ plasma treatment or the like can be omitted.

  The contact angle of the ejected ink with respect to the bank 514 that has been made liquid-repellent as described above is preferably secured to 40 ° or more.

  In the source / drain electrode formation step (second conductive pattern formation step) subsequent to the second layer bank formation step, the conductive layer is formed so as to fill the groove 514a which is the drawing region partitioned by the bank 514. By discharging droplets containing a conductive material by inkjet, a source electrode 515 and a source electrode 516 intersecting with the gate scanning electrode 512 are formed as shown in FIG. Then, when forming the source electrode 515 and the drain electrode 516, the pattern forming method according to the present invention is applied.

  As the conductive material at this time, Ag, Al, Au, Cu, palladium, Ni, W-si, a conductive polymer, or the like can be suitably used. Since the source electrode 515 and the drain electrode 516 thus formed are provided with sufficient liquid repellency in the bank 514 in advance, a fine wiring pattern can be formed without protruding from the groove 514a. ing.

  An insulating material 517 is disposed so as to fill the groove 514a in which the source electrode 515 and the drain electrode 516 are disposed. Through the above steps, a flat upper surface 520 including the bank 514 and the insulating material 517 is formed on the substrate 510.

  Then, a contact hole 519 is formed in the insulating material 517, a patterned pixel electrode (ITO) 518 is formed on the upper surface 520, and the drain electrode 516 and the pixel electrode 518 are connected through the contact hole 519. TFT is formed.

(Sixth embodiment)
FIG. 14 is a diagram showing another embodiment of the liquid crystal display device.
A liquid crystal display device (electro-optical device) 901 illustrated in FIG. 14 includes a color liquid crystal panel (electro-optical panel) 902 and a circuit board 903 connected to the liquid crystal panel 902. Further, an illumination device such as a backlight and other incidental devices are attached to the liquid crystal panel 902 as necessary.

  The liquid crystal panel 902 includes a pair of substrates 905a and 905b bonded by a sealant 904, and liquid crystal is sealed in a gap formed between the substrates 905b and 905b, a so-called cell gap. . These substrates 905a and 905b are generally formed of a light-transmitting material such as glass or synthetic resin. A polarizing plate 906a and a polarizing plate 906b are attached to the outer surfaces of the substrate 905a and the substrate 905b. In FIG. 14, the polarizing plate 906b is not shown.

  An electrode 907a is formed on the inner surface of the substrate 905a, and an electrode 907b is formed on the inner surface of the substrate 905b. These electrodes 907a and 907b are formed in stripes or letters, numbers, or other appropriate patterns. The electrodes 907a and 907b are made of a light-transmitting material such as ITO (Indium Tin Oxide). The substrate 905a has a protruding portion that protrudes from the substrate 905b, and a plurality of terminals 908 are formed on the protruding portion. These terminals 908 are formed simultaneously with the electrode 907a when the electrode 907a is formed over the substrate 905a. Therefore, these terminals 908 are made of, for example, ITO. These terminals 908 include one that extends integrally from the electrode 907a and one that is connected to the electrode 907b via a conductive material (not shown).

  On the circuit board 903, a semiconductor element 900 as a liquid crystal driving IC is mounted at a predetermined position on the wiring board 909. Although not shown, a resistor, a capacitor, and other chip components may be mounted at predetermined positions other than the portion where the semiconductor element 900 is mounted. The wiring substrate 909 is manufactured by patterning a metal film such as Cu formed on a flexible film-like base substrate 911 such as polyimide to form a wiring pattern 912.

In this embodiment, the electrodes 907a and 907b in the liquid crystal panel 902 and the wiring pattern 912 in the circuit board 903 are formed by the device manufacturing method.
According to the liquid crystal display device of the present embodiment, it is possible to obtain a high-quality liquid crystal display device that is miniaturized and thinned and does not cause defects such as disconnection.

(Seventh embodiment)
Next, as a seventh embodiment, a plasma display device which is an example of the electro-optical device of the invention will be described.
FIG. 15 is an exploded perspective view of the plasma display device 500 of this embodiment.
The plasma display device 500 includes substrates 501 and 502 disposed opposite to each other, and a discharge display unit 510 formed therebetween.
The discharge display unit 510 is a collection of a plurality of discharge chambers 516. Among the plurality of discharge chambers 516, the three discharge chambers 516 of the red discharge chamber 516 (R), the green discharge chamber 516 (G), and the blue discharge chamber 516 (B) are arranged so as to form one pixel. Has been.

Address electrodes 511 are formed in stripes at predetermined intervals on the upper surface of the substrate 501, and a dielectric layer 519 is formed so as to cover the address electrodes 511 and the upper surface of the substrate 501. A partition wall 515 is formed on the dielectric layer 519 so as to be positioned between the address electrodes 511 and 511 and along the address electrodes 511. The barrier ribs 515 include barrier ribs adjacent to the left and right sides of the address electrode 511 in the width direction, and barrier ribs extending in a direction orthogonal to the address electrodes 511. A discharge chamber 516 is formed corresponding to a rectangular region partitioned by the partition 515.
In addition, a phosphor 517 is disposed inside a rectangular region defined by the partition 515. The phosphor 517 emits red, green, or blue fluorescence. The red phosphor 517 (R) is located at the bottom of the red discharge chamber 516 (R), and the bottom of the green discharge chamber 516 (G). Are arranged with a green phosphor 517 (G) and a blue phosphor 517 (B) at the bottom of the blue discharge chamber 516 (B).

On the other hand, a plurality of display electrodes 512 are formed in stripes at predetermined intervals on the substrate 502 in a direction orthogonal to the previous address electrodes 511. Further, a dielectric layer 513 and a protective film 514 made of MgO or the like are formed so as to cover them.
The substrate 501 and the substrate 502 are bonded to each other with the address electrodes 511... And the display electrodes 512.
The address electrode 511 and the display electrode 512 are connected to an AC power supply (not shown). By energizing each electrode, the phosphor 517 emits light in the discharge display portion 510, and color display is possible.

  In the present embodiment, since the address electrode 511 and the display electrode 512 are each formed based on the above-described wiring pattern forming method, the size and thickness can be reduced, and high-quality that does not cause defects such as disconnection occurs. A plasma display device can be obtained.

(Eighth embodiment)
Subsequently, an embodiment of a non-contact type card medium will be described as an eighth embodiment. As shown in FIG. 16, the non-contact type card medium (electronic device) 400 according to the present embodiment includes a semiconductor integrated circuit chip 408 and an antenna circuit 412 in a housing made up of a card base 402 and a card cover 418. At least one of power supply and data transmission / reception is performed by at least one of electromagnetic waves and capacitive coupling with an external transceiver (not shown).

In the present embodiment, the antenna circuit 412 is formed by the wiring pattern forming method according to the embodiment.
According to the non-contact type card medium of the present embodiment, it is possible to obtain a high-quality non-contact type card medium that is reduced in size and thickness and does not cause defects such as disconnection.
In addition to the above, the device (electro-optical device) according to the present invention utilizes a phenomenon in which electron emission is caused by flowing a current through a small-area thin film formed on a substrate in parallel to the film surface. The present invention can also be applied to a surface conduction electron-emitting device.

(Ninth embodiment)
As a ninth embodiment, a specific example of the electronic apparatus of the present invention will be described.
FIG. 17A is a perspective view showing an example of a mobile phone. In FIG. 17A, reference numeral 600 denotes a mobile phone body, and reference numeral 601 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
FIG. 17B is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 17B, reference numeral 700 denotes an information processing device, 701 denotes an input unit such as a keyboard, 703 denotes an information processing body, and 702 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
FIG. 17C is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 17C, reference numeral 800 denotes a watch body, and reference numeral 801 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
Since the electronic apparatus shown in FIGS. 17A to 17C includes the liquid crystal display device of the above-described embodiment, it can be downsized, thinned, and improved in quality.
In addition, although the electronic device of this embodiment shall be provided with a liquid crystal device, it can also be set as the electronic device provided with other electro-optical devices, such as an organic electroluminescent display apparatus and a plasma type display apparatus.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to such examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

For example, the plasma treatment is performed to impart liquid repellency to the bank. However, as described above, the bank may be formed of a material containing fluorine or a fluorine compound. Moreover, it is good also as a structure which performs processes other than a plasma process.
Furthermore, in the said embodiment, although it was set as the structure which discharges a larger diameter droplet than the width | variety of a groove part, it is not limited to this, The structure where the width | variety of a groove part is larger may be sufficient.

  In the above embodiment, the contact angle with respect to the coated region H1 on the substrate P is set to 15 ° or less. However, the present invention is not limited to this, and the contact angle difference between the liquid repellent region H2 and the coated region H1 is not limited thereto. May be 40 ° or more.

It is a schematic perspective view of a droplet discharge device. It is a figure for demonstrating the discharge principle of the liquid material by a piezo method. It is a figure which shows the procedure of forming the wiring pattern which concerns on 1st Embodiment. It is a figure which shows the procedure of forming the wiring pattern which concerns on 2nd Embodiment. It is the top view which looked at the liquid crystal display device from the counter substrate side. It is sectional drawing which follows the H-H 'line | wire of FIG. It is an equivalent circuit diagram of a liquid crystal display device. It is a partial expanded sectional view of a liquid crystal display device. It is a partial expanded sectional view of an organic EL device. It is a figure for demonstrating the process of manufacturing a thin-film transistor. It is a figure for demonstrating the process of manufacturing a thin-film transistor. It is a figure for demonstrating the process of manufacturing a thin-film transistor. It is a figure for demonstrating the process of manufacturing a thin-film transistor. It is a figure which shows another form of a liquid crystal display device. It is a disassembled perspective view of a plasma type display apparatus. It is a disassembled perspective view of a non-contact type card medium. It is a figure which shows the specific example of the electronic device of this invention.

Explanation of symbols

B ... Bank, F ... Liquid repellent film, H1 ... Application region, H2 ... Liquid repellent region, P ... Substrate (thin film patterning substrate), 31 ... Groove (application region), 32 ... Liquid droplet (functional liquid) , 33 ... Wiring pattern (thin film pattern), 100 ... Liquid crystal display device (electro-optical device), 400 ... Non-contact card medium (electronic device), 500 ... Plasma display device (electro-optical device), 600 ... Mobile phone Main body (electronic device), 700 ... Information processing device (electronic device), 800 ... Watch body (electronic device)

Claims (6)

In the manufacturing method of the active matrix substrate,
A first step of forming a gate wiring on the substrate;
A second step of forming a gate insulating film on the gate wiring;
A third step of laminating a semiconductor layer via the gate insulating film;
A fourth step of forming a source electrode and a drain electrode on the semiconductor layer on the gate insulating film;
A fifth step of disposing an insulating material on the source electrode and the drain electrode;
And a sixth step of forming a pixel electrode on the insulating material.
In at least one of the first step and the fourth step, a coating region to which the functional liquid is applied, and a bank formed so as to surround the coating region are provided. A substrate in which a difference between a contact angle of the functional liquid and a contact angle of the functional liquid with respect to the bank is 40 ° or more, and a groove width between the banks is smaller than a diameter of the discharged droplet of the functional liquid Functional fluid is discharged against
In the first step, the surface of the bank surrounding the coated region when forming the gate wiring and the surface of the gate wiring are formed flush with each other,
In the fifth step, the surface of the bank surrounding the coated region when forming the source electrode and the drain electrode and the surface of the insulating material are formed flush with each other. Method.
In the manufacturing method of the active-matrix substrate of Claim 1,
A method of manufacturing an active matrix substrate, wherein a contact angle of the functional liquid with respect to the coated region is 15 ° or less. In the manufacturing method of the active-matrix board | substrate of Claim 1 or 2,
The method of manufacturing an active matrix substrate, wherein the bank is surface-modified by plasma treatment. In the manufacturing method of the active-matrix board | substrate of Claim 1 or 2,
The method for manufacturing an active matrix substrate, wherein the bank contains fluorine or a fluorine compound.   An electro-optical device comprising an active matrix substrate manufactured by the manufacturing method according to claim 1.   An electronic apparatus comprising the electro-optical device according to claim 5.

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