JP2006303268A5 - - Google Patents

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Publication number
JP2006303268A5
JP2006303268A5 JP2005124529A JP2005124529A JP2006303268A5 JP 2006303268 A5 JP2006303268 A5 JP 2006303268A5 JP 2005124529 A JP2005124529 A JP 2005124529A JP 2005124529 A JP2005124529 A JP 2005124529A JP 2006303268 A5 JP2006303268 A5 JP 2006303268A5
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JP
Japan
Prior art keywords
solder resist
resist material
semiconductor chip
holes
core material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005124529A
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Japanese (ja)
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JP4615360B2 (en
JP2006303268A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2005124529A priority Critical patent/JP4615360B2/en
Priority claimed from JP2005124529A external-priority patent/JP4615360B2/en
Publication of JP2006303268A publication Critical patent/JP2006303268A/en
Publication of JP2006303268A5 publication Critical patent/JP2006303268A5/ja
Application granted granted Critical
Publication of JP4615360B2 publication Critical patent/JP4615360B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (6)

コア材、前記コア材の表面に形成された複数のボンディング電極、前記複数のボンディング電極のそれぞれを露出するように、前記コア材の前記表面上に形成されたソルダレジスト材、前記コア材の前記表面と反対側の裏面に形成された複数のランド、及び前記複数のボンディング電極と前記複数のランドとをそれぞれ電気的に接続するための配線経路である複数のスルーホールを有する基板と、
平面形状が四角形から成り、複数の電極が形成された主面を有し、前記コア材の前記表面上に形成された前記ソルダレジスト材上に、ペースト材を介して接着された半導体チップと、
前記半導体チップの前記複数の電極と前記基板の前記複数のボンディング電極とをそれぞれ電気的に接続する複数のボンディングワイヤと、
前記半導体チップ及び前記複数のボンディングワイヤを封止するように、前記基板の前記主面上に形成された封止樹脂と、
前記複数のランドにそれぞれ接続された複数のはんだボールと、
を含み、
前記複数のボンディング電極は、前記半導体チップの各辺に沿うように、前記基板の前記表面に形成されており、
前記複数のスルーホールは、前記半導体チップの各辺に沿うように、前記半導体チップと前記基板の前記複数のボンディング電極との間に形成されており、
前記ソルダレジスト材には、前記コア材の前記表面を露出する凹部が複数形成されており、
前記複数の凹部は、前記半導体チップの各辺に沿うように、前記半導体チップと前記基板の前記複数のボンディング電極との間で、かつ前記複数のスルーホールのうちの隣接するスルーホール間に形成されていることを特徴とする半導体装置。
A core material, a plurality of bonding electrodes formed on the surface of the core material, a solder resist material formed on the surface of the core material so as to expose each of the plurality of bonding electrodes, and the core material A plurality of lands formed on the back surface opposite to the front surface, and a substrate having a plurality of through holes which are wiring paths for electrically connecting the plurality of bonding electrodes and the plurality of lands, respectively.
A semiconductor chip having a main surface on which a planar shape is formed of a quadrangle and on which a plurality of electrodes are formed, and is bonded to the solder resist material formed on the surface of the core material via a paste material;
A plurality of bonding wires electrically connecting the plurality of electrodes of the semiconductor chip and the plurality of bonding electrodes of the substrate;
A sealing resin formed on the main surface of the substrate so as to seal the semiconductor chip and the plurality of bonding wires;
A plurality of solder balls respectively connected to the plurality of lands;
Including
The plurality of bonding electrodes are formed on the surface of the substrate along each side of the semiconductor chip,
The plurality of through holes are formed between the semiconductor chip and the plurality of bonding electrodes of the substrate along each side of the semiconductor chip,
The solder resist material is formed with a plurality of recesses exposing the surface of the core material,
The plurality of recesses are formed between the semiconductor chip and the plurality of bonding electrodes of the substrate and between adjacent through holes among the plurality of through holes so as to be along each side of the semiconductor chip. A semiconductor device which is characterized by being made.
請求項1記載の半導体装置において、
前記複数の凹部は、前記複数のスルーホールのそれぞれと平面的に重ならないように、前記ソルダレジスト材に形成されていることを特徴とする半導体装置。
The semiconductor device according to claim 1,
Wherein the plurality of recesses, so as not to overlap to each in a plane of said plurality of through holes, the semiconductor equipment characterized that you have formed in the solder resist material.
請求項2記載の半導体装置において、
前記複数のスルーホールのそれぞれは、前記ソルダレジスト材で覆われていることを特徴とする半導体装置。
The semiconductor device according to claim 2,
Wherein each of the plurality of through holes, the semiconductor equipment characterized that you have been covered with the solder resist material.
請求項3記載の半導体装置において、
前記複数のスルーホールのそれぞれを覆う前記ソルダレジスト材の一部は、盛り上がっていることを特徴とする半導体装置。
The semiconductor device according to claim 3.
The portion of the respective cover of the plurality of through holes solder resist material, it has raised a semiconductor equipment according to claim Rukoto.
請求項4記載の半導体装置において、
前記凹部の平面形状は矩形状から成り、
前記凹部のうちの前記スルーホール側に位置する端辺は、盛り上がるように形成された前記ソルダレジスト材のすそ野部に接するように、前記ソルダレジスト材に形成されていることを特徴とする半導体装置。
The semiconductor device according to claim 4.
The planar shape of the recess is a rectangular shape,
An end of the recess located on the through-hole side is formed in the solder resist material so as to be in contact with a bottom portion of the solder resist material formed so as to rise. Place.
請求項5記載の半導体装置において、The semiconductor device according to claim 5.
前記コア材の前記裏面上には、前記複数のランドのそれぞれを露出するように、ソルダレジスト材が形成されていることを特徴とする半導体装置。A solder resist material is formed on the back surface of the core material so as to expose each of the plurality of lands.
JP2005124529A 2005-04-22 2005-04-22 Semiconductor device Expired - Fee Related JP4615360B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005124529A JP4615360B2 (en) 2005-04-22 2005-04-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005124529A JP4615360B2 (en) 2005-04-22 2005-04-22 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010197003A Division JP5271982B2 (en) 2010-09-02 2010-09-02 Semiconductor device

Publications (3)

Publication Number Publication Date
JP2006303268A JP2006303268A (en) 2006-11-02
JP2006303268A5 true JP2006303268A5 (en) 2008-05-29
JP4615360B2 JP4615360B2 (en) 2011-01-19

Family

ID=37471187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005124529A Expired - Fee Related JP4615360B2 (en) 2005-04-22 2005-04-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JP4615360B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4362165B2 (en) * 1999-05-28 2009-11-11 イビデン株式会社 Electronic component mounting device
JP4308608B2 (en) * 2003-08-28 2009-08-05 株式会社ルネサステクノロジ Semiconductor device

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