JP2006302748A - Electroluminescence device, manufacturing method of electroluminescence device and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a top emission type EL device having high luminance and excellent color reproducibility and excelling in reliability. <P>SOLUTION: This EL device 100 is so structured that a luminescent layer 5 is sandwiched between light reflecting films 3 and a translucent reflecting film (doubling as an electrode) 9 and an optical resonator structure for resonating light emitted from the luminescent layer 5 between the light reflecting films 3 and the translucent reflecting film 9 is formed. A plurality of luminescent elements 10, where the luminescent layer 5 is held by a pair of electrodes 8 and 9 and each of which has the luminescent layer 5 and the pair of electrodes 8 and 9, are formed on a substrate 2. The plurality of light reflecting films 3 are formed on the substrate 2 by corresponding to the plurality of luminescent elements 10, and the electrode 8 on the substrate 2 side out of the pair of electrodes 8 and 9 is arranged on the light reflecting film 3. Protective films 4 formed on the basis of each light reflecting film 3 are arranged between the electrodes 8 on the substrate 2 side and the light reflecting films 3. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an electroluminescence device, a method for manufacturing an electroluminescence device, and an electronic apparatus.

In recent years, development of EL devices using EL (electroluminescence) elements, which are self-luminous elements, as pixels has been underway. In general, an EL element has a configuration in which a functional layer such as a light emitting layer is sandwiched between an anode and a cathode, and light emitted from the light emitting layer is used as display light as it is. However, such an EL element has a problem that the spectrum of light extracted from the light emitting layer is broad and the light emission luminance is small, and sufficient color reproducibility cannot be obtained when applied to a display device. Therefore, in order to solve such problems, a dielectric mirror (semi-transparent reflective layer) is provided between the substrate and the anode, and an optical resonant structure comprising a dielectric mirror, a transparent anode, a functional layer, and a light reflective cathode. The structure which provides is proposed (refer patent document 1). In an EL device having this optical resonator structure, the light emitted from the light emitting layer reciprocates between the dielectric mirror and the light reflective cathode, and only the light having the resonance wavelength corresponding to the optical distance is amplified. Is taken out. For this reason, light with high emission luminance and sharp spectrum can be extracted. In addition, by changing the thickness of the transparent anode for each pixel (that is, the optical distance between the dielectric mirror and the light-reflecting cathode), it corresponds to red (R), green (G), and blue (B). Wavelength light can also be extracted.
Japanese Patent No. 2797883

The EL device of Patent Document 1 is a so-called bottom emission type EL device that extracts light from a light emitting layer from a substrate side. Recently, a top emission type EL device that extracts light mainly from the side opposite to the substrate has been developed. As one variation thereof, a structure in which the above optical resonator structure is combined is studied. In this case, a light reflecting film is formed under the transparent anode, and a transparent anode, a light emitting layer, and a transparent cathode are formed thereon. As a material of this light reflecting film, aluminum or silver is suitable. However, these metals generally have low chemical resistance. In particular, in the above structure in which the thickness of the anode is changed for each pixel, the anode is etched many times on the light reflecting film. There is a problem that the surface of the light reflecting film is easily deteriorated.
The present invention has been made in view of such circumstances, and prevents deterioration of the light reflecting film when an electrode is formed on the light reflecting film, so that a highly efficient optical resonator structure can be obtained. It is an object of the present invention to provide a top emission type electroluminescent device and a manufacturing method thereof. It is another object of the present invention to provide a highly reliable electronic device including such an electroluminescence device.

In order to solve the above-described problems, an electroluminescence device (EL device) according to the present invention includes a light emitting layer sandwiched between a light reflection film and a semi-transmissive reflection film, and the light reflection film and the semi-transmissive reflection film. An electroluminescence device having an optical resonator structure that resonates light emitted from the light emitting layer, the light emitting layer being held by a pair of electrodes, and having the light emitting layer and the pair of electrodes. A plurality of light-emitting elements configured as described above are provided on a substrate, and on the substrate, a plurality of light reflection films are provided corresponding to the plurality of light-emitting elements. The electrode on the substrate side of the pair of electrodes is disposed, and a protective film provided for each light reflecting film is disposed between the electrode on the substrate side and the light reflecting film. Features. Here, the protective film may be formed by anodizing the surface of the light reflecting film.
According to this configuration, since the protective film is formed on the light reflecting film, there is no possibility that the surface of the light reflecting film is deteriorated by the etching chemical when the electrode is formed thereon. In particular, when the protective film is formed of an anodic oxide film, not only the surface of the light reflecting film but also the side surfaces can be protected without unevenness, so that a more reliable EL device can be obtained.

In the present invention, the plurality of light emitting elements may include a plurality of light emitting elements having different resonance wavelengths in the optical resonator structure. Here, the resonance wavelength may be adjusted to different wavelengths depending on the film thickness of the electrode on the substrate side of the light emitting element.
According to this configuration, for example, it is possible to provide an EL device capable of full color display by forming a light emitting element having a resonance wavelength corresponding to each color of red (R), green (G), and blue (B). Can do.

In this invention, the color filter which permeate | transmits the light of the wavelength corresponding to the said resonant wavelength can be provided in the opposite side to the said light reflection film of the said light emitting element.
According to this configuration, since only light transmitted through the color filter is extracted from the light output from the optical resonance structure, an EL device with better color reproducibility can be provided.
In addition, since external light can be absorbed by the color filter, an EL device with less external light reflection can be provided. At this time, reflection of light that could not be absorbed by the color filter (light corresponding to the transmission wavelength of the color filter) becomes a problem. However, since such light is absorbed by the optical resonator structure, the display is hardly affected. . That is, since the transmission wavelength of the color filter substantially matches the resonance wavelength of the optical resonator structure, the optical resonator structure has a very high transmittance and a very low reflectance with respect to the light transmitted through the color filter. It will be a thing. For this reason, external light that has passed through the color filter and reached the optical resonator structure is absorbed by the optical resonator structure as it is, and is hardly reflected outside.

In the method of manufacturing the electroluminescence device of the present invention, a light emitting layer is sandwiched between a light reflecting film and a semi-transmissive reflecting film, and light is emitted from the light emitting layer between the light reflecting film and the semi-transmissive reflecting film. A method of manufacturing an electroluminescence device having an optical resonator structure for resonating light, the step of forming a plurality of the light reflecting films on a substrate, and forming a protective film on the surface of the light reflecting film, respectively. And a step of forming a light emitting element including the light emitting layer on the protective film. Here, the protective film may be formed by anodizing the surface of the light reflecting film.
According to this method, since the protective film is formed in advance on the surface of the light reflecting film before forming the light emitting element, the surface of the light reflecting film is caused by the etching chemical when patterning the electrode of the light emitting element. There is no deterioration. In particular, when the protective film is formed of an anodic oxide film, not only the surface of the light reflecting film but also the side surfaces can be protected without unevenness, so that a more reliable EL device can be obtained.

In the present invention, in the step of forming the protective film and the step of forming the light emitting element, a plurality of types of light emitting elements having different resonance wavelengths in the optical resonant structure can be formed. Here, the step of forming the light emitting element includes a step of forming a pair of electrodes for holding the light emitting layer, and the resonance wavelength varies the film thickness of the electrode on the substrate side of the pair of electrodes. It can be adjusted by.
According to this method, for example, it is possible to provide an EL device capable of full color display by forming a light emitting element having a resonance wavelength corresponding to each color of red (R), green (G), and blue (B). Can do.

In the present invention, the electrode on the substrate side is formed in such a manner that at least one conductive film is left on the protective film, and a conductive film having a thickness corresponding to the resonance wavelength is added thereto. Can be.
According to this method, since the surface of the light reflecting film is double protected by the protective film and the one or more conductive films left on the protective film, a more reliable EL device. Can be provided.

The electronic apparatus of the present invention includes the above-described electroluminescence device of the present invention or the electroluminescence device manufactured by the above-described manufacturing method of the present invention.
According to this configuration, it is possible to provide an electronic device including an EL device with high luminance, good color reproducibility, and excellent reliability.

  Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, an EL device (electroluminescence device) in which EL elements are arranged as pixels on a substrate, particularly an organic EL device in which a light emitting layer is formed of an organic light emitting material will be described as an example. This organic EL device can be suitably used as display means for electronic devices, for example.

[First Embodiment]
[Organic EL device]
FIG. 1 is a cross-sectional view showing a schematic configuration of the organic EL device according to the first embodiment of the present invention.
The organic EL device 100 according to the present embodiment is a so-called top emission type organic EL device that extracts light (display light) emitted from the light emitting layer 5 from the side opposite to the substrate 2. The organic EL device 100 has a configuration in which an organic EL element 10 that is a light emitting element is disposed on the upper surface of a substrate 2. The organic EL element 10 includes a first electrode 8 (8 _R , 8 _G , 8 _B ), a hole transport layer 6, a light emitting layer 5, and an electron transport on one side (upper surface in FIG. 1) side of the substrate 2. The layer 7 and the second electrode 9 are sequentially stacked. Further, immediately below the first electrode 8, a light reflecting film 3 is provided that reflects light emitted toward the substrate 2 side to the light emitting layer 5 side. A protective film 4 is provided between the light reflecting film 3 and the first electrode 8, and the first electrode 8 is disposed on the light reflecting film 3 via the protective film 4. In the present embodiment, the first electrode 8 is an anode and the second electrode 9 is a cathode, but these can be reversed. In this case, a structure in which a cathode, an electron transport layer, a light emitting layer, a hole transport layer, and an anode are laminated in this order from the substrate 2 side. The hole transport layer 6, the light emitting layer 5, and the electron transport layer 7 form a functional layer (organic functional layer) 11 made of an organic functional material.

  Although not shown, the organic EL device 100 is an active matrix type, and actually, a plurality of data lines and a plurality of scanning lines are arranged in a grid pattern, and are arranged in a matrix partitioned by these data lines and scanning lines. Each pixel is provided with a driving TFT such as a switching transistor or a driving transistor, and the organic EL element 10 is connected through the driving TFT. When a drive signal is supplied via the data line or the scanning line, a current flows between the electrodes, the organic EL element 10 emits light, light is emitted to the outer surface side of the cathode 9, and the pixel is lit.

  In the present embodiment, since the display light is extracted from the cathode 9 side, a light-transmitting conductive film such as ITO is used for the cathode 9. Regarding the anode 8, since the light reflecting film 3 is provided on the substrate 2 side, a light-transmitting conductive film such as ITO is used similarly to the cathode 9. As the substrate 2, in addition to a transparent substrate such as glass, an opaque substrate can also be used. Examples of opaque substrates include ceramics such as alumina, metal sheets such as stainless steel that have been subjected to insulation treatment such as surface oxidation, thermosetting resins and thermoplastic resins, and films thereof (plastic films). It is done.

  The light emitting material that can constitute the light emitting layer 5 is a known polymer light emitting material capable of emitting fluorescence or phosphorescence, which is a polyfluorene derivative (PF), a polyparaphenylene vinylene derivative (PPV), a polyphenylene derivative ( PP), polyparaphenylene derivative (PPP), polyvinylcarbazole (PVK), polythiophene derivative, polydialkylfluorene (PDAF), polyfluorenebenzothiadiazole (PFBT), polyalkylthiophene (PAT), polymethylphenylsilane (PMPS) Such as polysilanes can be suitably used. In addition, these light-emitting materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, quinacridone, and the like. It is also possible to use a low molecular weight material doped.

The hole transport layer 6 enhances the efficiency of charge injection from the anode 8 to the light emitting layer 5 and has a function of blocking electrons moving in the light emitting layer 5, thereby regenerating the electrons and holes in the light emitting layer. There is an effect of increasing the coupling probability. For the hole transport layer 6, a material having a low injection barrier from the anode 8 and a high hole mobility is preferably used. As such a material, for example, a polythiophene derivative, a polypyrrole derivative, or a doped body thereof is used. Specifically, a dispersion of 3,4-polyethylenedioxythiophene / polystyrene sulfonic acid (PEDOT / PSS) [trade name; Bytron-p: manufactured by Bayer], that is, polystyrene as a dispersion medium A dispersion liquid in which 3,4-polyethylenedioxythiophene is dispersed in sulfonic acid and then dispersed in water is used.
If necessary, the efficiency of electron injection from the cathode 9 to the light emitting layer 5 may be increased, and the electron transport layer 7 having a hole blocking function may be formed. The electron transport layer 7 can be formed of an organic material such as an oxadiazole derivative or Alq ₃ .

  Here, in this embodiment, the cathode 9 functions as a transflective film that transmits part of the light emitted from the light emitting layer 5 and reflects part or all of the remaining light to the light reflecting film 3 side. To do. . In general, a translucent conductive film such as ITO has a reflectance of about 10% at the interface with the atmospheric layer, and a cathode using such a translucent conductive film unless special measures are taken. 9 has a function as a transflective film as described above. The functional layer 11 including the light emitting layer 5 is sandwiched between the cathode 9 having such a transflective function and the light reflecting film 3, and the light emitting layer is interposed between the cathode 9 and the light reflecting film 3. An optical resonance structure for resonating light emitted from 5 is formed. In this organic EL device 100, the light emitted from the light emitting layer 5 reciprocates between the light reflecting film 3 and the cathode 9, and only the light having the resonance wavelength corresponding to the optical distance is amplified and extracted. For this reason, light with high emission luminance and sharp spectrum can be extracted.

  In FIG. 1, the upper surface side of the cathode 9 is an atmospheric layer, but instead, the upper surface side of the cathode 9 may be covered with a layer made of a low refractive index material. In this case, it is desirable to dispose a material that produces as large a refractive index difference as possible with the cathode 9 so as to increase the reflectance of light at the cathode interface.

A plurality of light reflecting films 3 are provided on the substrate 2 corresponding to the plurality of organic EL elements 10 arranged in a matrix. Each light reflecting film 3 is provided in a stripe shape along the arrangement direction of the organic EL elements 10, and a stripe-like protective film 4 is provided for each of the plurality of light reflecting films 3. This protective film 4 is formed, for example, by anodizing the surface of the light reflecting film 3. Each light reflection film 3 is assigned a pixel of a specific color, and a plurality of pixels of the specific color are arranged on the same light reflection film 3. In the present embodiment arrangement, for example, a red pixel (R pixel) D _R, a green pixel (G pixel) D _G, the pixel row corresponding to the blue pixel (B pixel) D _B is, on each separate light reflecting layer 3 Has been.

The light output from each pixel D _R , D _G , D _B is a wavelength corresponding to the resonance wavelength of the optical resonator structure formed in the pixel, that is, the optical distance between the light reflecting film 3 and the cathode 9. Light. This optical distance is obtained as the sum of the optical distances of the respective layers disposed between the light reflecting film 3 and the cathode 9. The optical distance of each layer is determined by the product of its film thickness and refractive index. Each In R pixel _D R, G pixel _D G, B pixel _{D B,} since the color of the light output each is different, these pixels _{D R,} D G, the resonance wavelength of the optical resonator structure arranged _{D B} also It is different. In the case of this embodiment, these resonance wavelengths are adjusted by the film thickness of the anode 8 that is the electrode on the substrate 2 side of the organic EL element 10. The film thickness of the anode 8 in each pixel is maximized at the R pixel D _R (anode 8 _R ) where the resonance wavelength is the largest, and then the G pixel D _G (anode 8 _G ) and B pixel D _B (anode 8). _The film thickness decreases in the order of _B ).

In these pixels _{D R,} D G, _{D B,} the color of the light output is adjusted by the thickness of the anode 8, the material of the light-emitting layer 5 is not necessarily R pixel _D R, G pixel _D G, need not differ in B pixel D _B. Therefore, it is possible to commonly by the white light emitting material emitting material of each pixel _{D R, D G, D B} . In this case, since the lifetimes of the R pixel D _R , the G pixel D _G , and the B pixel D _B can be made equal, the display color does not change even when used for a long time. However, since light other than a specific wavelength does not contribute to the display, it is preferable to dispose an appropriate light emitting material for each pixel when it is desired to increase the light utilization efficiency. Ie, R pixel D _R, G pixel D _G, with respect to the B pixel D _B, red light-emitting material, respectively, a green light emitting material, a blue light-emitting material disposed an optical resonator structure in accordance with the peak wavelengths of the luminescent materials If the optical distance is adjusted, the light utilization efficiency is high and display with higher luminance is possible.

[Method for Manufacturing Organic EL Device]
Next, a method for manufacturing the organic EL device 100 will be described.
First, as shown in FIG. 2 (a), providing a substrate 2 made of a glass substrate or the like, on the surface of the substrate 2, the corresponding R pixel D _R, G pixel D _G, the pixel columns of the B pixel D _B A plurality of stripe-shaped light reflecting films 3 are formed.
Here, a plurality of data lines and a plurality of scanning lines are formed on the substrate 2 in advance, and a switching transistor, a driving transistor, or the like is provided for each pixel arranged in a matrix partitioned by the data lines and the scanning lines. A driving TFT is formed. Further, a cleaning process is performed on the surface of the substrate 2 as necessary.
The light reflecting film 3 is formed by sputtering a metal material such as Al on the entire surface of the substrate and patterning it. In the present embodiment, Al is used as the light reflecting film 3, but other high reflectivity materials other than Al, such as Ag, can also be used.

Next, as shown in FIG. 2B, the surface of each light reflecting film 3 is anodized using a predetermined electrolytic solution, and the protective film 4 made of an anodized film is formed on the surface of each light reflecting film 3, respectively. Form.
As the electrolytic solution, weakly acidic electrolytic solutions such as oxalic acid, phosphoric acid, sulfuric acid, and chromic acid are suitable. In this example, a 0.3 M (mol / l) sulfuric acid aqueous solution is used. Further, platinum (Pt) is used as the cathode electrode.
In this anodizing step, only the surface of the light reflecting film 3 is anodized, and the other light reflecting film 3 is left. As a result, an anodic oxide film (protective film 4) having a thickness of about 50 nm is formed on the surface of each light reflecting film 3.

Next, the organic EL element 10 is formed on the protective film 4.
As described above, in the present embodiment, the thickness of the electrode substrate 2 side of the organic EL element 10 (i.e., anode 8), each pixel D _R, D _G, the color of the light output from D _B (resonant wavelength ) Are different. Therefore, an anode 8 is formed on the protective film 4, it is necessary to form R pixel D _R, G pixel D _G, different thickness for the B pixel D _B. As a method for this, in the present embodiment, three film forming steps are performed in accordance with the difference in film thickness of these anodes 8 _R , 8 _G , and 8 _B.

First, as shown in FIG. 2 (c), the entire surface to form a light transmitting conductive material M1 of the substrate 2 by patterning the permeability on the surface of the protective film 4 provided on the R pixel D _R A photoconductive first conductive film 81 is formed (FIG. 2D). As the conductive material M1, ITO is suitable, but other conductive materials may be used.

Next, as shown in FIG. 3 (a), by the entire surface of the substrate 2 including the first conductive film 81 to form a conductive material M2 of the translucent, patterning the provided R pixel D _R the surface and G pixel D _G surface of the protective film 4 provided on the first conductive film 81 to form the second conductive film 82 of the translucent were (Figure 3 (b)). As the conductive material M2, the same material as the conductive material M2 can be used, but it may be different.

Next, as shown in FIG. 3C, a light-transmitting conductive material M3 is formed on the entire surface of the substrate 2 including the first conductive film 81 and the second conductive film 82, and this is patterned, so that R the pixel D _R and G pixels D surface of the second conductive film 82 provided on the _G and B pixels D surface of the protective film 4 provided on the _B form a third conductive film 83 of the translucent (Figure 4 ( a)). As the conductive material M3, the same materials as the conductive materials M1 and M2 can be used, but they may be different.

Thus, the R pixels _{D R,} the first conductive film 81, the second conductive film 82, a thick film anode _{8 R} thickness composed of three layers of the third conductive film 83 is formed. The G pixel _{D G,} the second conductive film 82, an intermediate anode _{8 G} of thickness comprising two layers of the third conductive film 83 is formed. The B pixel D _B, a thin film thickness of the anode 8 _B consisting of one layer of the third conductive film 83 is formed. The film thicknesses of these anodes 8 _R , 8 _G , and 8 _B are, for example, 90 nm, 50 nm, and 20 nm.

When the anode 8 is formed as described above, as shown in FIG. 4B, the hole transport layer 6, the light emitting layer 5, and the electron transport layer 7 are formed in this order on the surface of the anode.
These layers can be formed by a vapor deposition method, an inkjet method, or the like. When the ink jet method is used, it is desirable to previously form a bank structure called a bank around the anode 8 in order to prevent ink from spreading. An organic functional layer 11 is formed by the hole transport layer 6, the light emitting layer 5, and the electron transport layer 7.

Next, as shown in FIG. 4C, a cathode 9 is formed on the surface of the organic functional layer 11 by sputtering or the like.
As a material for the cathode 9, a light-transmitting conductive material such as ITO is used. Since such a conductive material generally has a high refractive index, for example, when the upper surface side of the cathode 9 is an atmospheric layer, it has a high light reflectance of about 10% at the interface with the atmospheric layer. It will be a thing. Such a cathode 9 functions as a transflective film that transmits part of the light emitted from the light emitting layer 5 and reflects part or all of the remaining light to the light reflecting film 3 side. By using the cathode 9 having the transflective function, an optical resonance structure that resonates light emitted from the light emitting layer 5 is formed between the cathode 9 and the light reflecting film 3.
Thereafter, by mounting a driving driver or the like on the substrate 2, the organic EL device 100 is completed.

  Note that a sealing member can be provided on the surface of the cathode 9 as necessary. By sealing the entire cathode with the sealing member, it is possible to prevent moisture, oxygen, and the like from entering the organic EL element 10. In this case, it is desirable to provide a member having a low refractive index at the portion in contact with the cathode 9 so as to produce a refractive index difference as large as possible with the cathode 9. By doing so, the light reflectance at the cathode interface is increased, and light having a higher luminance and a sharp spectrum can be obtained.

As described above, in the organic EL device 100 of the present embodiment, the light emitting layer 5 is sandwiched between the light reflecting film 3 and the semi-transmissive reflecting film 9, and the light reflecting film 3 and the semi-transmissive reflecting film 9 are arranged. In the meantime, an optical resonator structure for resonating light emitted from the light emitting layer 5 is formed. For this reason, light having high emission luminance and a sharp spectrum can be extracted as display light. In each pixel _{D R, D G, D B} , by changing the thickness of the anode 8, therefore they are at different resonant wavelengths of the optical resonator structure, the common material of the light-emitting layer 5 by a white light emitting material or the like It is possible to Therefore, life in common for each pixel _{D R, D G, D B} , it is possible to realize the long-term also displayed little color using. In this case, in order to change the film thickness of the anode 8, a plurality of film forming steps and etching steps are required on the light reflecting film 3. In this embodiment, the light reflecting film 3 and the anode 8 are previously provided. Since the protective film 4 is formed, the surface of the light reflecting film 3 is not deteriorated by the chemical solution for etching. In particular, since the protective film 4 is formed of an anodic oxide film, not only the surface of the light reflecting film 3 but also the side surfaces can be protected evenly, and a more reliable EL device can be obtained.

[Second Embodiment]
Next, a method for manufacturing an organic EL device according to the second embodiment of the present invention will be described with reference to FIGS. In this method, only the step of forming the electrode (anode) on the substrate side of the organic EL element is different from that of the first embodiment. For this reason, FIGS. 5 to 7 show only the anode forming step, and the description of the steps common to the first embodiment is omitted.

First, as shown in FIG. 5A, the light reflecting film 3 and the protective film 4 are formed on the substrate 2 by using the same method as in the first embodiment.
Next, as shown in FIG. 5B, a light-transmitting conductive material M4 is formed on the entire surface of the substrate 2, and this is patterned so that the R pixel D _R , the G pixel D _G , and the B pixel D _B A translucent first conductive film 81 is formed on the surface of the protective film 4 provided on the substrate (FIG. 5C). As the conductive material M4, ITO is suitable, but other conductive materials may be used.

Next, as shown in FIG. 6 (a), covered by a mask material R1 comprising the surface of the substrate 2 from the resist or the like, except for the R pixel D _R and G pixel D _G.
Next, as shown in FIG. 6B, a translucent conductive material M5 is formed on the entire surface of the substrate 2 including the mask material R1, and subsequently, as shown in FIG. 6C, this mask material. R1 is removed together with the conductive material M5 formed on the surface of the mask material R1. Accordingly, the second conductive film 85 of the light-transmitting surface of the first conductive film 84 provided on the R pixel D _R and G pixel D _G is formed. As the conductive material M5, the same material as the conductive material M4 can be used, but it may be different.

Next, as shown in FIG. 7 (a), covered by a mask material R2 comprising the surface of the substrate 2 except for the R pixel D _R of a resist or the like.
Next, as shown in FIG. 7B, a translucent conductive material M6 is formed on the entire surface of the substrate 2 including the mask material R2, and then, as shown in FIG. 7C, this mask material. R2 is removed together with the conductive material M5 formed on the surface of the mask material R2. Accordingly, the third conductive film 86 on the surface of the transparent second conductive film 85 provided on the R pixel D _R is formed. The conductive material M6 can be the same as the conductive materials M4 and M5, but may be different.

Thus, the R pixels _{D R,} the first conductive film 84, the second conductive film 85, a thick film anode _{8 R} thickness composed of three layers of the third conductive film 86 is formed. The G pixel _{D G,} the first conductive film 84, an intermediate anode _{8 G} of thickness comprising two layers of the second conductive film 85 is formed. The B pixel D _B, a thin film thickness of the anode 8 _B consisting of one layer of the first conductive film 84 is formed.

As described above, in this embodiment, the anodes 8 _R , 8 _G , and 8 _B of each pixel leave at least one conductive film on the protective film 4, and a film corresponding to each resonance wavelength is formed on the conductive film. It is formed so as to add a thick conductive film. For this reason, the surface of the light reflecting film 3 is doubly protected by the protective film 4 and the one or more conductive films left on the protective film 4, so that the organic EL device with higher reliability can be obtained. Can be provided.

[Third Embodiment]
Next, based on FIG. 8, an organic EL device according to a third embodiment of the present invention will be described.
The basic configuration of the organic EL device 200 of the present embodiment is the same as that of the organic EL device 100 of the first embodiment. The only difference is that a color filter substrate 13 is provided on the side of the organic EL element 10 opposite to the light reflecting film 3. The color filter substrate 13, the pixel _{D R,} D G, a color filter _{14 R, 14 G, 14 B} that transmits light of a wavelength corresponding to the resonance wavelength of _{D B} are provided. According to this configuration, since only the light transmitted through the color filters 14 _R , 14 _G , and 14 _B is extracted from the light output from the optical resonance structure, it is possible to provide an organic EL device with better color reproducibility. it can.

Further, since the external light can be absorbed by the color filters 14 _R , 14 _G , and 14 _B , an organic EL device with less external light reflection can be provided. At this time, reflection of light that cannot be absorbed by the color filters 14 _R , 14 _G , and 14 _B (light corresponding to the transmission wavelength of the color filter) becomes a problem, but such light is absorbed by the optical resonator structure. Therefore, the display is hardly affected. That is, since the transmission wavelengths of the color filters 14 _R , 14 _G , and 14 _B substantially match the resonance wavelength of the optical resonator structure, the optical resonator structure has a very high transmittance with respect to the light transmitted through the color filter. High and reflectivity is very low. For this reason, external light that has passed through the color filters 14 _R , 14 _G , and 14 _B and has reached the optical resonator structure is absorbed as it is by the optical resonator structure and hardly reflected to the outside.

[Electronics]
Examples of electronic devices provided with the organic EL device of the above embodiment will be described.
FIG. 9 is a perspective view showing an example of a mobile phone. A cellular phone 1300 shown in the figure includes a plurality of operation buttons 1302, an earpiece 1303, a mouthpiece 1304, and a display unit 1301 including the organic EL device of the previous embodiment. According to the mobile phone 1300, since the organic EL device according to the above-described embodiment is provided, it is possible to realize an electronic apparatus that has an organic EL display unit with a high display quality and a bright screen.
The electronic apparatus provided with the organic EL device according to the present invention is not limited to the above-mentioned ones. For example, digital cameras, personal computers, televisions, portable televisions, viewfinder type / monitor direct view type video tape recorders. PDAs, portable game machines, pagers, electronic notebooks, calculators, clocks, word processors, workstations, videophones, POS terminals, devices with touch panels, and the like. In addition, examples of the electronic device including the organic EL device according to the present invention include a vehicle-mounted display such as a vehicle-mounted audio device, a vehicle instrument, and a car navigation device.

The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to such examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.
For example, although the transflective film of the present invention is formed by the cathode 9 in the above embodiment, a transflective film can be formed separately from the cathode 9. In this case, the transflective film may be formed on either the upper surface side or the lower surface side of the cathode. Further, although the protective film 4 is formed of an anodic oxide film, the protective film 4 can be formed by a film forming means other than anodic oxidation.

1 is a cross-sectional view illustrating a schematic configuration of an organic EL device according to a first embodiment. It is process drawing which shows the manufacturing method of the same organic EL device. FIG. 3 is a process diagram following FIG. 2. FIG. 4 is a process diagram following FIG. 3. It is process drawing which shows the manufacturing method of the organic electroluminescent apparatus concerning 2nd Embodiment. FIG. 6 is a process diagram following FIG. 5. FIG. 7 is a process drawing following FIG. 6. It is sectional drawing which shows schematic structure of the organic EL apparatus which concerns on 3rd Embodiment. It is a schematic diagram which shows the mobile telephone which is an example of an electronic device.

Explanation of symbols

2 ... substrate, 3 ... light reflection film, 4 ... protection layer, 5 ... light-emitting _{layer, 8,8 R, 8 G, 8} B ... anode, 9 ... cathode (transflective film), 10 ... Organic EL device (light emitting Element), 14, 14 _R , 14 _G , 14 _B ... color filter, 81 to 86 ... conductive film, 100, 200 ... organic EL device, 1300 ... mobile phone (electronic device), D _R , D _G , D _B ... Pixel

Claims (11)

A light emitting layer is sandwiched between the light reflecting film and the semi-transmissive reflecting film, and an optical resonator structure for resonating light emitted from the light emitting layer is formed between the light reflecting film and the semi-transmissive reflecting film. An electroluminescence device,
The light-emitting layer is held by a pair of electrodes, and a plurality of light-emitting elements each including the light-emitting layer and the pair of electrodes are provided on a substrate, while the plurality of light-emitting elements are provided on the substrate. Correspondingly, a plurality of the light reflecting films are provided, and the substrate-side electrode of the pair of electrodes is disposed on the light reflecting film, and the substrate-side electrode and the light reflecting film An electroluminescent device characterized in that a protective film provided for each light reflecting film is disposed between them.   The electroluminescent device according to claim 1, wherein the plurality of light emitting elements include a plurality of light emitting elements having different resonance wavelengths in the optical resonator structure.   The electroluminescence device according to claim 2, wherein the resonance wavelength is adjusted to a wavelength different from each other depending on a film thickness of an electrode on the substrate side of the light emitting element.   4. The electroluminescence device according to claim 2, wherein a color filter that transmits light having a wavelength corresponding to the resonance wavelength is provided on a side opposite to the light reflection film of the light emitting element.   The electroluminescent device according to claim 1, wherein the protective film is formed by anodizing the surface of the light reflecting film. A light emitting layer is sandwiched between the light reflecting film and the semi-transmissive reflecting film, and an optical resonator structure for resonating light emitted from the light emitting layer is formed between the light reflecting film and the semi-transmissive reflecting film. A method of manufacturing an electroluminescent device comprising:
Forming a plurality of the light reflecting films on a substrate;
Forming a protective film on the surface of the light reflecting film,
And a step of forming a light-emitting element including the light-emitting layer on the protective film.   The manufacturing method of the electroluminescence device according to claim 6, wherein in the step of forming the protective film and the step of forming the light emitting element, a plurality of types of light emitting elements having different resonance wavelengths in the optical resonant structure are formed. Method. The step of forming the light emitting element includes a step of forming a pair of electrodes for holding the light emitting layer,
The method of manufacturing an electroluminescent device according to claim 7, wherein the resonance wavelength is adjusted by changing a film thickness of the electrode on the substrate side of the pair of electrodes.   The electrode on the substrate side is formed in such a manner that at least one conductive film is left on the protective film, and a conductive film having a film thickness corresponding to the resonance wavelength is added thereto. The method for manufacturing an electroluminescent device according to claim 8.   The method for manufacturing an electroluminescent device according to claim 6, wherein the protective film is formed by anodizing the surface of the light reflecting film. An electroluminescence device according to any one of claims 1 to 5 or an electroluminescence device produced by the production method according to any one of claims 6 to 10. machine.

Images