JP2006295099A - Vacuum equipment, method for measuring its leak rate, program and storage medium used for measuring leak rate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for precisely measuring a leak rate from a vacuum chamber in vacuum equipment which does not use a gate valve at an exhaust part. <P>SOLUTION: The method for measuring the leak rate of the vacuum equipment is provided with the vacuum chamber 2 for housing a matter to be treated and treating it, a first exhaust pump 22 connected with the vacuum chamber 2 through a first valve 21 being a conductance variable valve, and a second valve 23 connected to downstream in an exhaust direction compared with the first exhaust pump 22. The equipment is provided with a circulation path 26 branched from an exhaust path between the first exhaust pump 22 and the second valve 23, and connected with the vacuum chamber in a communicated state. In the state of setting the first valve 21 to prescribed conductance and closing the second valve 23, gas is circulated to the vacuum chamber 2 through the circulation path 26 by the first exhaust pump 22 to monitor pressure in the vacuum chamber 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a vacuum apparatus that performs processing such as etching and film formation on an object to be processed such as a semiconductor wafer, a leak rate measuring method thereof, a program used for measuring the leak rate, and a storage medium.

  In a vacuum apparatus used for processes such as etching and film formation in the manufacturing process of various semiconductor devices, an exhaust unit including a valve and an exhaust pump is provided, and the pressure inside the vacuum chamber can be reduced to a desired vacuum state. It is configured as follows.

  Specifically, from the vacuum chamber side, an automatic pressure control valve (APC valve) with variable conductance, a gate valve, a turbo molecular pump (TMP) as a main exhaust pump, and a dry exhaust pump as an auxiliary exhaust pump through an optional valve. The pumps are connected in this order, and are configured to be able to maintain a highly airtight state and a vacuum state of the vacuum chamber. An APC valve with a gate valve mechanism in which the APC valve and the gate valve are integrated may be used.

  In such a vacuum apparatus, it is necessary to periodically measure the leak rate of the vacuum chamber and check the airtightness. The leak rate is measured by a build-up method in which the gas in the vacuum chamber is evacuated and evacuated and then sealed, and the pressure in the chamber is measured and the fluctuation is monitored in that state (for example, patent document) 1). In order to measure the leak rate by this build-up method, it is necessary to make the vacuum chamber hermetically sealed. Therefore, the gate valve (or the APC valve with the gate valve mechanism) is installed upstream of the turbo molecular pump in the exhaust direction. It was deployed.

An O-ring is used as a sealing material for securing an airtight state in a gate valve or an APC valve with a gate valve mechanism. However, in a vacuum apparatus that performs processing using plasma, O-rings are generated by radicals generated during dry cleaning or the like. The ring deteriorated easily and it was necessary to replace it frequently. The maintenance work of the O-ring takes a long time due to the recent increase in the diameter of the exhaust pipe, which is a major factor in increasing the downtime of the apparatus.
Japanese Unexamined Patent Publication No. 2003-77898 (FIG. 4 etc.)

  The main purpose of providing a gate valve adjacent to the APC valve (or integrated with the APC valve) in the exhaust part of the vacuum apparatus is to seal the inside of the vacuum chamber during the leak rate measurement by the build-up method. However, if the leak rate measurement can be replaced by another method, there is no need to interpose a gate valve, and the number of maintenance required for O-ring replacement should be greatly reduced.

  Accordingly, an object of the present invention is to provide a leak rate measuring method capable of accurately measuring a leak rate from a vacuum chamber even when a gate valve is not provided, and secondly, to reduce the number of maintenance. Therefore, it is to provide a vacuum apparatus that does not use a gate valve upstream of the turbo molecular pump in the exhaust direction.

In order to solve the above-described problems, according to a first aspect of the present invention, a vacuum chamber that performs processing by containing an object to be processed therein, and a first valve that is a conductance variable valve are provided in the vacuum chamber. A leak rate measuring method for measuring a leak rate of a vacuum apparatus comprising: a first exhaust pump connected to the first exhaust pump; and a second valve connected to a downstream of the first exhaust pump in the exhaust direction,
A circulation path branched from the exhaust path between the first exhaust pump and the second valve and connected to the vacuum chamber in a communicating state;
With the first valve set to a predetermined conductance and the second valve closed, gas is circulated to the vacuum chamber through the circulation path by the first exhaust pump, and the inside of the vacuum chamber is There is provided a method for measuring a leak rate, characterized by monitoring pressure.

According to a second aspect of the present invention, a vacuum chamber that accommodates an object to be processed therein and performs processing, and a first chamber connected to the vacuum chamber via a first valve that is a conductance variable valve. A leak rate measuring method for measuring a leak rate of a vacuum apparatus comprising an exhaust pump and a second valve connected downstream in the exhaust direction from the first exhaust pump,
With the first valve fully opened and the first exhaust pump activated, the second valve is closed, and the pressure in the exhaust path between the first exhaust pump and the second valve is reduced. There is provided a method for measuring a leak rate, characterized by monitoring.

According to a third aspect of the present invention, a vacuum chamber that accommodates an object to be processed therein and performs processing, and a first chamber that is connected to the vacuum chamber via a first valve that is a conductance variable valve. A leak rate measuring method for measuring a leak rate of a vacuum apparatus comprising an exhaust pump and a second exhaust pump connected to the first exhaust pump via a second valve,
With the first valve fully opened and the first exhaust pump stopped, the second exhaust pump depressurizes the vacuum chamber to a predetermined pressure or lower, then closes the second valve, A leak rate measuring method is provided, characterized by monitoring the pressure in the vacuum chamber in a state.

According to a fourth aspect of the present invention, a vacuum chamber that accommodates an object to be processed therein and performs processing, and a first chamber that is connected to the vacuum chamber via a first valve that is a conductance variable valve. A leak rate measuring method for measuring a leak rate of a vacuum apparatus comprising an exhaust pump and a second valve connected downstream in the exhaust direction of the first exhaust pump,
With the first exhaust pump activated and the second valve open, the first valve is set to a predetermined conductance and the pressure in the vacuum chamber is measured. A leak rate measurement method is provided.

  In the leak rate measurement method of the fourth aspect, by comparing the measured pressure with a pressure value inside the vacuum chamber calculated in advance when the first valve has a predetermined conductance, The leak rate can be estimated. The predetermined conductance is preferably 10 L / second or less.

Conventionally, in order to measure the leak rate of the vacuum chamber, a gate valve mechanism is provided upstream of the first exhaust pump in the exhaust direction, and the inside of the vacuum chamber is sealed.
In other words, a gate valve is installed adjacent to the variable conductance valve, or a variable conductance valve with a gate valve mechanism is used, and the vacuum chamber is closed by closing the gate valve, and the leak rate is reduced by the build-up method. According to any one of the first to fourth aspects, since the leak rate of the vacuum chamber can be measured without using the gate valve mechanism, the gate is positioned upstream of the first exhaust pump in the exhaust direction. There is no need to provide a valve mechanism.

According to a fifth aspect of the present invention, a vacuum chamber that accommodates an object to be processed and performs processing;
A first exhaust pump connected to the vacuum chamber via a first valve that is a conductance variable valve having no gate valve mechanism;
A second valve connected downstream of the first exhaust pump in the exhaust direction;
Is provided.

  According to the fifth aspect, by adopting a configuration in which the gate valve mechanism is not provided upstream of the first exhaust pump in the exhaust direction, the quick deterioration O-ring that is essential for the gate valve mechanism is not used. A vacuum device can be constructed. Therefore, the time and cost required for maintenance such as replacement of the O-ring can be reduced, the number of parts can be reduced, and the safety of the apparatus can be improved.

  In the fifth aspect, a second exhaust pump connected further downstream in the exhaust direction than the second valve can be further provided. In this case, it is preferable that the first exhaust pump is a turbo molecular pump and the second exhaust pump is a dry pump. The first valve has a substantially semi-circular pair of plates arranged symmetrically to form a valve body, and the opening degree of the first valve is rotated by turning the straight side portion of each plate as a rotation center. A valve that variably adjusts conductance by adjusting is preferable.

  Further, it may be configured to include a circulation path that branches from an exhaust path between the first exhaust pump and the second valve and is connected to the vacuum chamber in a communication state.

According to a sixth aspect of the present invention, a vacuum chamber that accommodates an object to be processed therein and performs processing, and a first chamber connected to the vacuum chamber via a first valve that is a conductance variable valve. An exhaust pump, a second valve connected downstream of the first exhaust pump in the exhaust direction, and an exhaust path between the first exhaust pump and the second valve, branching into the vacuum chamber A program used for measuring a leak rate in a vacuum apparatus having a circulation path connected in a communication state,
The program is at least on a computer.
Setting the first valve to a predetermined opening;
Circulating the gas to the vacuum chamber through the circulation path by the first exhaust pump with the second valve closed;
Monitoring the pressure in the vacuum chamber;
Is provided.

According to a seventh aspect of the present invention, a vacuum chamber that accommodates an object to be processed therein and performs processing, and a first chamber that is connected to the vacuum chamber via a first valve that is a conductance variable valve. An exhaust pump, and a second valve connected downstream of the first exhaust pump in the exhaust direction;
A program used to measure the leak rate in a vacuum apparatus comprising:
The program is at least on a computer.
Fully opening the first valve and closing the second valve with the first exhaust pump activated;
Monitoring the pressure in the exhaust path between a first exhaust pump and the second valve;
Is provided.

According to an eighth aspect of the present invention, a vacuum chamber that accommodates an object to be processed therein and performs processing, and a first chamber that is connected to the vacuum chamber via a first valve that is a conductance variable valve. An exhaust pump, and a second exhaust pump connected to the first exhaust pump via a second valve;
A program used to measure the leak rate in a vacuum apparatus comprising:
The program is at least on a computer.
Reducing the pressure in the vacuum chamber below a predetermined pressure by the second exhaust pump in a state where the first valve is fully opened and the first exhaust pump is stopped;
Then, closing the second valve;
Monitoring the pressure in the vacuum chamber with the second valve closed;
Is provided.

According to a ninth aspect of the present invention, a vacuum chamber that accommodates an object to be processed therein and performs processing, and a first chamber that is connected to the vacuum chamber via a first valve that is a conductance variable valve. A program used for measuring a leak rate in a vacuum apparatus comprising an exhaust pump and a second valve connected downstream in the exhaust direction of the first exhaust pump,
The program is at least on a computer.
Setting the first valve to a predetermined opening in a state in which the first exhaust pump is operated and the second valve is opened;
Measuring the pressure in the vacuum chamber;
There is provided a program characterized in that the program is executed.

  In the ninth aspect, a leak rate is estimated by comparing the measured pressure with a pressure value calculated in advance in the vacuum chamber when the first valve has a predetermined opening degree. A step can further be included.

  According to a tenth aspect of the present invention, there is provided a computer-readable storage medium storing the program described in any one of the sixth to ninth aspects.

According to an eleventh aspect of the present invention, there is provided a vacuum apparatus including a vacuum chamber that accommodates an object to be processed and performs processing,
A vacuum apparatus is provided, wherein the vacuum apparatus is connected to a controller that controls the leak rate measuring method according to the first aspect in the vacuum chamber.

According to a twelfth aspect of the present invention, there is provided a vacuum processing system comprising a plurality of vacuum devices according to the eleventh aspect,
It is connected to the control unit and supervises this, and comprises an overall control unit that controls the entire vacuum processing system,
Vacuum processing system.

  According to the present invention, the leak rate of the vacuum chamber can be measured without providing a gate valve adjacent to the conductance variable valve or a gate valve integrated with the conductance variable valve (APC valve with a gate valve mechanism). Therefore, the maintenance of the O-ring that is easily deteriorated, which is necessary for the gate mechanism, is not required, and the downtime of the apparatus required for the maintenance can be reduced, and the cost associated with the maintenance can be reduced.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a diagram showing a schematic configuration of a vacuum apparatus 1 according to an embodiment of the present invention. The vacuum apparatus 1 is configured as a parallel plate type plasma processing apparatus in which a pair of electrode plates face each other in the vertical direction, and is suitably used for an etching process or the like in the manufacturing process of a semiconductor device.

  The vacuum apparatus 1 has a susceptor 3 in a vacuum chamber 2, which is a mounting table for a semiconductor wafer (hereinafter simply referred to as “wafer”) W, which is an object to be processed, and also functions as a lower electrode. A shower head 5 that is grounded and functions as an upper electrode is provided at an upper position facing the susceptor 3 in parallel. The distance between the susceptor 3 and the shower head 5 can be adjusted by a lifting mechanism (not shown) provided in the susceptor 3.

  A gas supply pipe 8 is connected to the shower head 5, and the gas supply pipe 8 is connected to a gas supply source 12 through a valve 9, a flow rate adjusting means 10, and a valve 11. Although only one gas supply source 12 is illustrated in FIG. 1, a plurality of gas supply sources 12 can be connected depending on the type of processing gas. The gases from these gas supply sources 12 reach the gas supply chamber 7 in the shower head 5 through the gas supply pipe 8 and are discharged uniformly from the gas discharge port 6 into the vacuum chamber 2.

  A high frequency power supply 13 is connected to the susceptor 3 functioning as the lower electrode via a matching unit (not shown). The high frequency power supply 13 can supply high frequency power of an arbitrary frequency to the susceptor 3 as the lower electrode. it can.

  An exhaust port 4 is formed at the bottom of the vacuum chamber 2. The exhaust port 4 has an APC valve (automatic pressure control valve) 21 as a conductance variable valve and a turbo molecular pump (first exhaust pump). TMP) 22, a valve 23 as a second valve, and a dry pump (DP) 24 as a second exhaust pump are connected in this order to constitute an exhaust section. As described above, in the vacuum apparatus 1 of the present embodiment, the gate valve that is disposed adjacent to the conductance variable valve (or as a conductance variable valve with a gate valve mechanism) on the upstream side of the conventional turbo molecular pump 22 in the exhaust direction. The configuration is omitted. With such a configuration, maintenance work such as replacement of a rapidly degrading O-ring, which is essential for a gate valve (conductance variable valve with a gate valve mechanism), is reduced. Therefore, it is possible to significantly reduce the number of times the apparatus is stopped for maintenance and the stop time, and it is possible to suppress the costs associated with component replacement and the costs associated with stopping the apparatus. In addition, accidents such as gas leakage from the deteriorated O-ring can be prevented, and the safety of the vacuum apparatus can be improved.

  The APC valve 21 can automatically control the pressure by changing the conductance via the control unit 30 (described later) based on the pressure value measured by the pressure gauge (PG) 25 for measuring the pressure in the vacuum chamber 2. It is configured as follows.

  Conventionally, as a conductance variable valve with a gate valve mechanism, for example, a pendulum valve 50 as shown in FIG. 2 has been used. When the pendulum valve 50 adjusts the conductance and functions as a gate valve by swinging a plate (valve element) 52 in the horizontal direction by a stepping motor 51 to advance and retract into the exhaust path, The exhaust path is closed by lowering the lock ring 54 provided with the O-ring 53 by the action of the plunger 55.

  However, in the vacuum apparatus 1 of the present embodiment, various forms of variable conductance valves can be used because the gate valve function is unnecessary. For example, as shown in FIG. 3A, a straight line corresponding to a string of the semicircular plates 61 and 62 having a valve body in which a pair of substantially semicircular plates 61 and 62 are arranged symmetrically is provided. By adjusting the opening degree by turning about the side of the proper side, the rose fly valve 60 capable of variably adjusting the conductance can be used. The butterfly valve 60 has a structure in which the opening is adjusted by raising the plates 61 and 62 at an arbitrary angle toward the same side (for example, the upstream side in the exhaust direction). As shown in FIG. 2, the turbo molecular pump 22 can be directly connected to the lower side of the exhaust path, and the size in the direction perpendicular to the cross section of the exhaust path can be reduced. There is an advantage that the installation space can be greatly reduced.

  In the vacuum apparatus 1 having the above configuration, the wafer W is placed on the susceptor 3, and the gas supply source is evacuated to a predetermined high vacuum state by the turbo molecular pump 22 and the dry pump 24. The etching gas is supplied into the vacuum chamber 2 from 12 while controlling the etching gas at a predetermined flow rate. In this state, high frequency power is applied to the susceptor 3 as a lower electrode to generate a high frequency electric field in the vacuum chamber 2, whereby the etching process of the wafer W can be performed by converting the etching gas into plasma.

Further, in the vacuum apparatus 1 of FIG. 1, a dry pump 24 is provided on the secondary side (downstream in the exhaust direction) of the turbo molecular pump 22 via a pipe. The turbo molecular pump 22 is supplied with a purge gas such as N ₂ at a fixed flow rate by a purge gas line (not shown in FIG. 1), and therefore the performance of the dry pump 24 and the turbo molecular pump 22 to the dry pump 24 are The pressure value (back pressure value) on the secondary side of the turbo molecular pump 22 is determined by the pipe length. However, when a gas that is difficult to flow, such as H ₂ gas, is exhausted by the gas species supplied from the gas supply source 12 of the vacuum apparatus 1 to the vacuum chamber 2, it is affected by the back pressure value of the turbo molecular pump 22. In some cases, the inlet pressure of the turbo molecular pump 22 may fluctuate.

Therefore, as a modification of the vacuum device 1 in FIG. 1, for example, as in the vacuum device 40 shown in FIG. 4, a pressure for monitoring the back pressure of the turbo molecular pump 22 on the downstream side of the valve 23 which is the second valve. A sensor 29 such as a gauge may be provided, and a valve V3 having a flow rate control function may be provided on a purge gas line 42 that supplies a purge gas to the turbo molecular pump 22. Thus, the N ₂ gas as a purge gas from the N ₂ gas supply source 41, when supplying to the turbo molecular pump 22 via a valve V3, to monitor the back pressure of the turbo-molecular pump 22 with the sensor 29, the measured pressure Based on the value, the back pressure of the turbo molecular pump 22 can be controlled by adjusting the flow rate of the N ₂ gas with the valve V3.

That is, in the vacuum device 40 having the configuration shown in FIG. 4, the back pressure of the turbo molecular pump 22 is kept constant by changing the N ₂ purge amount to the turbo molecular pump 22 by feedback control in which the sensor 29 and the valve V3 cooperate. Can be controlled. According to such a configuration, the fluctuation of the inlet pressure of the turbo molecular pump 22 due to the influence of the exhaust system on the secondary side of the turbo molecular pump 22 (for example, the pipe length, the performance of the dry pump 24, etc.) is suppressed, and the vacuum chamber 2 can be stably controlled.

  FIG. 5 is a plan view showing a schematic configuration of a vacuum processing system 100 including the vacuum apparatus 1 of FIG. The vacuum processing system 100 is configured to perform an etching process or the like on a wafer W as a target object under a predetermined vacuum.

The vacuum processing system 100 includes three process ships 110A, 110B, and 110C, and each process ship 110A, 110B, and 110C has a vacuum apparatus 1 (1a, 1b, and 1c) independently of each other. . Since the process ships 110A to 110C have the same configuration, the process ship 110A will be described as an example here.
The process ship 110A includes a vacuum apparatus 1a, a load lock chamber 107a, and a gate valve 108a interposed therebetween.

  A module controller (Module Controller; hereafter abbreviated as “MC”) 305 a for controlling the pressure in the vacuum chamber 2 is connected to the vacuum apparatus 1 a. The MC 305a will be described later. A loader unit 103 is provided on the opposite side of the load lock chamber 107a from the vacuum apparatus 1a via a gate valve 106a. A wafer W can be accommodated on the opposite side of the load lock chamber 107a to the load lock chamber 107a. Three FOUP mounting tables 102 are provided via three connection ports (not shown) for attaching a FOUP 101.

  The vacuum device 1a communicates with the load lock chamber 107a by opening the gate valve 108a, and is disconnected from the load lock chamber 107a by closing the gate valve 108a. The load lock chamber 107a communicates with the loader unit 103 by opening the gate valve 106a, and is shut off from the loader unit 103 by closing the gate valve 106a. In the load lock chamber 107a, a wafer transfer device (not shown) is provided between the vacuum device 1a and the loader unit 103 to carry in and out the wafer W that is the object to be processed.

  A HEPA filter (not shown) is provided on the ceiling portion of the loader unit 103, and clean air that has passed through the HEPA filter is supplied into the loader unit 103 in a downflow state, and a clean air atmosphere at atmospheric pressure. Then, the wafer W is carried in and out. An orienter 105 is provided on one side surface of the loader unit 103, and the wafer W is aligned there.

  In the loader unit 103, a wafer transfer mechanism 104 is provided for carrying the wafer W into and out of the FOUP 101 and carrying the wafer W into and out of the load lock chamber 107a. The wafer transfer mechanism 104 has an articulated arm structure, and carries the wafer W by placing it on a pick 104a at the tip.

  The vacuum processing system 100 also includes a user interface 106 disposed at one end of the loader unit 103 in the longitudinal direction. The user interface 106 includes an input unit (keyboard) and a display unit (monitor) including, for example, an LCD (Liquid Crystal Display), and the display unit displays the operation status of each component of the vacuum processing system 100.

  The overall control in the vacuum processing system 100 and the pressure control in the vacuum chamber 2 of the vacuum apparatus 1 are performed by the control unit 30 (see FIG. 1). A schematic configuration of the control unit 30 is shown in FIG. As shown in FIG. 6, the control unit 30 includes an EC (Equipment Controller) 301 that is an overall control unit, a plurality of, for example, three MCs 305 a, 305 b, and 305 c provided corresponding to the vacuum apparatus 1, and the EC 301 and the MCs 305 a to 305 a. And a switching hub 304 for connecting 305c. The MC can be provided not only in the vacuum devices 1a to 1c but also in, for example, the load lock chambers 107a to 107c and the loader unit 103, and these are also integrated under the EC 301. Illustration and description are omitted.

  The controller 30 is connected to a host computer 501 as a MES (Manufacturing Execution System) that manages the manufacturing process of the entire factory where the vacuum processing system 100 is installed from the EC 301 via a LAN (Local Area Network). Yes. The host computer 501 cooperates with the control unit 30 to feed back real-time information related to processes in the factory to a basic business system (not shown) and make a determination related to processes in consideration of the load of the entire factory.

  The EC 301 is an overall control unit that controls each of the MCs 305 a to 305 c to control the operation of the entire vacuum processing system 100. The EC 301 includes a CPU (not shown) and a storage unit 303 such as a RAM and an HDD, and a wafer processing method (that is, a recipe including a pressure condition) designated by the user or the like on the user interface 106. The CPU reads out the program (including the position information of the measurement point) from the storage unit 303 and transmits the control program corresponding to the recipe to each MC 305a to 305c, whereby the process in each process ship 110A to 110C is performed. It can be controlled.

  The MCs 305a to 305c are normal control units that control the operations of the process ships 110A to 110C. Each MC 305a to 305c is connected to each I / O (input / output) module 308 via a network 309 realized by an LSI called GHOST (General High-Speed Optimum Scalable Transceiver). In the GHOST network 309, MCs 305a to 305c correspond to master nodes, and the I / O module 308 corresponds to slave nodes.

  The I / O module 308 has a plurality of I / O units 310 (only four are shown) connected to each component (end device) involved in pressure control in the vacuum chamber 2, and controls signals to the end device The output signal from the end device is transmitted. Here, examples of the end device related to pressure control include the turbo molecular pump 22, the dry pump 24, a pressure sensor (pressure gauge 25, etc.), various valves (APC valve 21, valve 23, valve V3, etc.), switch box (SW BOX) 313 and the like. In FIG. 6, for convenience, only connections between some end devices and the I / O unit 310 are representatively illustrated. The GHOST network 309 is also connected to an I / O boat (not shown) that controls input / output of digital signals, analog signals, and serial signals in the I / O unit 310.

  The switching hub 304 switches MCs 305a to 305c as connection destinations of the EC 301 in accordance with a control signal from the EC 301.

As described above, the MCs 305a to 305c collect the pressure value in the vacuum chamber 2 measured by the pressure gauge 25 in each process ship 1a to 1c, and change the conductance of the APC valve 21 based on the pressure value. The pressure in the vacuum chamber 2 is controlled by operating the turbo molecular pump 22 and the dry pump 24 and opening and closing various valves (valve 23, valve V3, etc.).
For example, each of the MCs 305a to 305c is configured to be able to exchange various signals such as start / stop of the turbo molecular pump 22, the dry pump 24 and the pump, an alarm, and the like via the I / O module 308, respectively. Thus, when the pump status signal and the alarm signal are supplied from the turbo molecular pump 22 and the dry pump 24 to the I / O module 308, they are converted into serial signals by the I / O board 310, and via the local GHOST line, It is sent to the switch box (SW BOX) 313 via the valve count unit (VCNT) 311 and the switch unit (SW) 312. Then, display means such as a light emitting diode (LED) in the switch box 313 is turned on / flashed / extinguished.

  In the control unit 30 shown in FIG. 6, the I / O module 310 is configured by modularizing the I / O unit 310 connected to the plurality of end devices without directly connecting the plurality of end devices to the EC 301. Since the I / O module 308 is connected to the EC 301 via the MCs 305a to 305c and the switching hub 304, the communication system can be simplified.

  The control signals transmitted by the CPUs of the MCs 305a to 305c refer to the address of the I / O unit 310 connected to the desired end device and the address of the I / O module 308 including the I / O unit 310. By referring to the address of the I / O unit 310 in the control signal by the GHOST of the MCs 305a to 305c, it is possible to eliminate the need for the switching hub 304 or the like to make an inquiry about the transmission destination of the control signal to the CPU. Smooth signal transmission can be realized.

  In addition, the control unit 30 may include a data collection server 314 as a data collection / recording unit that economically collects and records data output from the pressure gauge 25 (see FIG. 1) as pressure measurement means. . In this case, the data signal output from the pressure gauge 25 is extracted as an analog signal, input to the I / O unit 310, and input to the data collection server 314 via the GHOST network 309 or the LAN.

  In the vacuum processing system 100 having such a configuration, first, one wafer W is taken out from any one of the hoops 101 by the wafer transfer mechanism 104 in the loader unit 103 held in a clean air atmosphere at atmospheric pressure, and the orienter 105. Then, the wafer W is aligned. Next, after the wafer W is loaded into one of the load lock chambers 107a to 107c and the load lock chamber is evacuated, the wafer W in the load lock chamber is moved to one of the vacuum devices 1a to 1c by a wafer transfer device (not shown). It is possible to perform an etching process or the like in a high vacuum state by charging the vacuum chamber 2. Thereafter, the wafer W is loaded into one of the load lock chambers 107 a to 107 c and returned to atmospheric pressure, and then the wafer W in the load lock chamber is taken out by the wafer transfer mechanism 104 in the loader unit 103. House in either. Such an operation is performed on one lot of wafers W, and the processing for one lot is completed.

  According to the vacuum processing system 100 configured as described above, since the MCs 305a to 305c that perform control under the control of the EC 301 that is the overall control unit are provided, the pressure is measured by the pressure gauge 25 that is the pressure measuring unit. Based on the pressure in the vacuum chamber 2, the conductance adjustment of the APC valve 21 and the switching of the operation / non-operation of the turbo molecular pump 22 and the dry pump 24 can be controlled with high reliability.

  FIG. 7 is a schematic configuration diagram of a vacuum processing system according to an embodiment different from FIG. As shown in FIG. 7, this vacuum processing system 200 is a multi-chamber type vacuum processing system having six process units (vacuum devices) 261a to 261f on four sides of a transfer unit 263 having a slightly elongated hexagonal shape. . The structure of each process unit 261a-261f is the same as that of the vacuum apparatus 1 of FIG. MC305d-305i which are module controllers for controlling the pressure in the vacuum chamber 2 are connected to each process unit 261a-261f. Since these MCs 305d to 305i have the same configuration and functions as described above, description thereof is omitted (see FIG. 6).

  In FIG. 7, the substrate processing system 200 includes a hexagonal transfer unit 263 in plan view, six process units 261 a to 261 f arranged radially around the transfer unit 263, a loader unit 213, and the transfer unit 263. And two load lock units 243 and 244 arranged between the loader unit 213 and connecting the transfer unit 263 and the loader unit 213.

  That is, the loader unit 213 is provided on the opposite side of the load lock units 243 and 244 from the transfer unit 263. Three connection ports 220 for attaching a FOUP 201 capable of accommodating the wafer W are provided on the opposite side of the loader unit 213 from the load lock units 243 and 244. The hoop 201 is placed on the hoop placement table 202.

  The internal pressure of the transfer unit 263 and the process units 261a to 261f is maintained in a vacuum, and the transfer unit 263 and each of the process units 261a to 261f are connected to each other via a vacuum gate valve 262.

  In the vacuum processing system 200, the internal pressure of the loader unit 213 is maintained at atmospheric pressure, while the internal pressure of the transfer unit 263 is maintained in vacuum. Therefore, each of the load lock units 243 and 244 is provided with a vacuum gate valve 249 at a connection portion with the transfer unit 263 and an atmospheric door valve 250 at a connection portion with the loader unit 213, so that the internal pressure can be adjusted. It is configured as a simple vacuum preliminary transfer chamber. Each of the load lock units 243 and 244 has a wafer mounting table 253 for temporarily mounting a wafer delivered between the loader unit 213 and the transfer unit 263.

  Further, the transfer unit 263 includes a transfer arm unit 268 including two SCARA arm type transfer arms. The transfer arm unit 268 moves along the guide rail 269 provided in the transfer unit 263 and transfers the wafer W between the process units 261 a to 261 f and the load lock units 243 and 244.

  The ceiling portion of the loader unit 213 is provided with a HEPA filter (not shown), and clean air that has passed through the HEPA filter is supplied into the loader unit 213 in a downflow state, and a clean air atmosphere at atmospheric pressure. Then, the wafer W is carried in and out. Further, an orienter 216 is provided on one side surface of the loader unit 213, and the wafer W is aligned there.

  In the loader unit 213, a wafer transfer mechanism 204 that loads and unloads the wafer W with respect to the FOUP 201 and loads and unloads the wafer W with respect to the load lock units 243 and 244 is provided. The wafer transfer mechanism 204 has an articulated arm structure, and carries the wafer W on a pick (not shown) at its tip.

  The vacuum processing system 200 also includes a user interface 288 disposed at one end of the loader unit 213 in the longitudinal direction. The user interface 288 has an input unit (keyboard) and a display unit (monitor) including, for example, an LCD (Liquid Crystal Display), and the display unit displays the operation status of each component of the vacuum processing system 200.

  An IM (Integrated Metrology) 217 is disposed on the opposite side of the orienter 216 with the loader unit 213 interposed therebetween. The IM 217 is a measurement unit for accurately grasping variations in CD (Critical Dimension) and film thickness variations such as a gate insulating film and a capacitive insulating film. The IM 217 is provided with a wafer mounting table 221 and a sensor 222. As the sensor 222, for example, when measuring a CD value, an optical measuring means for measuring a pattern processing dimension on the wafer W can be used, and a CD-SEM (Critical Dimension Scanning Electron Microscope), an electronic Line holography can also be used. When the film thickness is measured, an X-ray photoelectron spectrometer (XPS), Auger electron spectrometer (AES), vacuum ultraviolet light (VUV) ellipsometry, or the like can be used as the sensor 222.

  A particle inspection unit 218 is provided on the side of the loader unit 213 where the hoop 201 is provided. The particle inspection unit 218 is a particle (fine particle) detection unit on the surface of the wafer W, and includes a wafer mounting table 223 and an optical measurement unit 224 using, for example, a scattered light detection method or an optical image comparison method.

  The overall control in the vacuum processing system 200, the pressure control in the vacuum chamber 2 of the process units 261a to 261f, and the like are performed by the control unit 30 (see FIG. 1). The configuration of the control unit 30 is similar to that described with reference to FIG.

  In the vacuum processing system 200 having such a configuration, the wafer W on which the watermark is formed can be carried into any of the process units 261a to 261f and subjected to processing such as etching. First, one wafer W is taken out from one of the hoops 201 and loaded into the orienter 216 by the wafer transfer mechanism 204 in the loader unit 213 held in a clean air atmosphere at atmospheric pressure, and the wafer W is aligned.

  Next, after the wafer W is loaded into one of the load lock units 243 and 244 and the inside of the load lock unit is evacuated, the wafer W in the load lock unit is transferred by the transfer arm unit 268 via the transfer unit 263. An etching process or the like can be performed by charging the vacuum chamber 2 in any one of the process modules 261a to 261f. Thereafter, the wafer W is again carried into one of the load lock units 243 and 244 by the transfer arm unit 268 and returned to atmospheric pressure, and then the load lock units 243 and 244 are loaded by the wafer transfer mechanism 204 in the loader unit 213. The wafer W inside is taken out and accommodated in one of the hoops 201. Such an operation is performed on one lot of wafers W, and the processing for one lot is completed.

  Since the vacuum processing system 200 configured as described above includes the MCs 305d to 305i that perform control under the control of the EC 301 that is the overall control unit, for example, the measurement is performed by the pressure gauge 25 that is a pressure measuring unit. Based on the pressure in the vacuum chamber 2, the conductance adjustment of the APC valve 21 and the switching between the operation / non-operation of the turbo molecular pump 22 and the dry pump 24 can be controlled with high reliability.

  Next, a leak rate measuring method in the vacuum apparatus 1 will be described with reference to FIGS. As described above, the vacuum apparatus 1 employs a configuration in which no gate valve is provided upstream of the turbo molecular pump 22. Conventionally, the gate valve is provided to seal the inside of the vacuum chamber 2 when measuring the leak rate. In the vacuum apparatus 1 of FIG. 1, the leak rate is measured by the following method. be able to.

<First Embodiment>
FIG. 8 is a flowchart showing a control sequence in the case of performing a leak rate measurement by the leak measurement method of the first embodiment, and FIG. This means that the white valve is in an open state, the black valve is in a closed state, and the shaded valve is at a constant opening between the open state and the closed state (FIGS. 12 and 15). The same applies to FIG. In the following description, for convenience, the valve 23 as the second valve may be referred to as a valve V1.

  In the present embodiment, a circulation pipe 26 that branches off from the exhaust path between the turbo molecular pump 22 and the valve V1 (valve 23) and connects to the vacuum chamber 2 in a communicating state is provided, and the vacuum gas is circulated by circulating the leak gas. The leak rate is measured by monitoring the pressure rise in 2.

  Steps S1 to S5 in FIG. 8 are sequences for determining the conductance of the APC valve 21, steps S6 to S8 are preparation sequences before measuring the leak rate, and steps S9 to S14 are leaks. It is a rate measurement sequence.

In the present embodiment, as a state before performing the leak check, the turbo molecular pump 22 and the dry pump 24 are activated, and the APC valve 21 is fully opened, the valve V1 is opened, the valve V2 is closed, and the valve V3 is opened.
First, in step S1, the valve V3 is closed. Next, a gas such as N ₂ is introduced from the gas supply source 12 into the vacuum chamber 2 at a preset flow rate (step S2). In step S3, the opening degree of the APC valve 21 is adjusted so that the inside of the vacuum chamber 2 becomes a predetermined pressure. In step S4, it is determined whether the pressure and flow rate in the vacuum chamber 2 are stabilized at the adjusted opening. As a result, when the stability of the pressure and the flow rate is insufficient (No), the measurement of the pressure and the flow rate is continued until it is further stabilized.
On the other hand, when it is determined in step S4 that the pressure and flow rate in the vacuum chamber 2 are stable (Yes), in step S5, the position A is stored as the opening of the APC valve 21, for example, the position of the valve body.

In step S6, the APC valve 21 is once fully opened. Subsequently, in step S7, introduction of N ₂ gas or the like from the gas supply source 12 is stopped. In this state, the pressure P1 in the vacuum chamber 2 is monitored, and in step S8, it is determined whether or not the pressure P1 has become a specified value or less. As a result, when it is determined that the pressure P1 is not less than the specified value (No), the gas introduction stop state is maintained until the pressure P1 reaches the specified value or less. On the other hand, if it is determined in step S8 that the pressure P1 is equal to or lower than the specified value (Yes), the opening degree of the APC valve 21 is adjusted to the position A stored in step S5 (step S9). In step S10, the valve V1 is closed and the valve V2 is opened as shown in FIG. In step S11, the process waits until the gas circulation is stabilized, and then, in step S12, measurement of the pressure P1 in the vacuum chamber 2 is started. In step S13, it is determined whether or not a preset time has elapsed from the start of measurement in step S12. If not (No), the measurement is continued. On the other hand, if it is determined in step S13 that the set time has elapsed (Yes), the leak rate is calculated from the pressure increase rate within the measurement time (step S14).

  FIG. 10 shows the transition of the pressure in the vacuum chamber 2 measured by such processing. FIG. 10 also shows the pressure change in the vacuum chamber 2 when an APC valve having a gate valve function is provided in the vacuum chamber 2 of FIG. 1 and measurement is performed by the build-up method. From FIG. 10, in the first embodiment in which the pressure was measured by circulating gas, linearity was observed in the pressure increase in the vacuum chamber 2. Although the slope of the straight line is different from the measurement result by the build-up method, the actual leak is calculated from the pressure in the vacuum chamber 2 measured by the leak rate measurement method of the first embodiment by calculating the correction coefficient in advance. It was confirmed that the rate could be calculated.

Second Embodiment
FIG. 11 is a flowchart showing a control sequence in the case of performing a leak rate measurement by the leak rate measuring method of the second embodiment, and FIG. 12 shows an operating state of the exhaust section at the time of measuring the leak rate in the second embodiment. It is a drawing. In the present embodiment, a pressure gauge 27 is arranged in a pipe between the turbo molecular pump 22 and the valve V1 (valve 23), and the back pressure of the turbo molecular pump 22, that is, between the turbo molecular pump 22 and the valve V1. The leak rate is measured by monitoring the pressure P2 in the pipe.

  Steps S21 to S22 in FIG. 11 are a preparation sequence before the leak rate measurement, and steps S23 to S27 are a leak rate measurement sequence.

In the present embodiment, as a state before performing the leak check, the turbo molecular pump 22 and the dry pump 24 are activated, and the APC valve 21 is fully opened, the valve V1 is opened, and the valve V3 is opened.
First, in step S21, the valve V3 is closed. Next, in step S22, the pressure P1 in the vacuum chamber 2 is monitored, and it is determined whether or not the pressure P1 has become a specified value or less. As a result, when it is determined that the pressure P1 is not less than the specified value (No), the pressure reduction is advanced until the pressure P1 reaches the specified value or less. On the other hand, if it is determined in step S22 that the pressure P1 is equal to or lower than the specified value (Yes), the valve V1 is closed in step S23 as shown in FIG. In step S24, the process waits until the pressure in the pipe between the turbo molecular pump 22 and the valve V1 is stabilized, and then, in step S25, measurement of the pressure P2 is started. Next, in step S26, it is determined whether or not a preset time has elapsed from the start of measurement in step S25. If not (No), the measurement is continued. On the other hand, if it is determined in step S26 that the set time has elapsed (Yes), the leak rate is calculated from the pressure increase rate within the measurement time (step S27).

  FIG. 13 shows a case where the gas is blocked by the flow rate control means 10 and the leak rates are experimentally 0.02 mL / min (sccm), 0.2 mL / min (sccm), 0.4 mL / min (sccm), 0.6 mL / The time transition of the pressure P2 at the time of setting so that it may become min (sccm) is shown. The measured value of the pressure P2 at each leak rate changes substantially linearly. Therefore, it was shown that the leak rate can be relatively grasped by monitoring the back pressure downstream of the turbo molecular pump 22 in the exhaust direction.

<Third Embodiment>
FIG. 14 is a flowchart showing a control sequence in the case of performing a leak rate measurement by the leak rate measurement method of the third embodiment, and FIG. It is. In the present embodiment, the turbo molecular pump 22 is stopped, the pressure increase in the vacuum chamber 2 is monitored from the state where the vacuum pump 2 is pulled out by the dry pump 24, and the leak rate is measured.

  Steps S31 to S32 in FIG. 14 are preparation sequences before the leak rate measurement, and steps S33 to S37 are a leak rate measurement sequence.

In this embodiment, the turbo molecular pump 22 is stopped, the dry pump 24 is activated, and the APC valve 21 is fully opened, the valve V1 is opened, and the valve V3 is opened as a state before the leak check.
First, in step S31, the valve V3 is closed. Next, in step S32, the pressure P1 in the vacuum chamber 2 is monitored to determine whether or not the pressure P1 has become a specified value or less. As a result, when it is determined that the pressure P1 is not less than the specified value (No), the pressure reduction is advanced until the pressure P1 reaches the specified value or less. On the other hand, if it is determined in step S32 that the pressure P1 is equal to or lower than the specified value (Yes), the valve V1 is closed in step S33 as shown in FIG. In step S34, the process waits until the pressure in the vacuum chamber 2 is stabilized, and in step S35, measurement of the pressure P1 is started. In this embodiment, the pressure fluctuation in the total volume of the pipes from the vacuum chamber 2, the APC valve 21, the turbo molecular pump 22, and the valve V1 is monitored.

  In step S36, it is determined whether or not a preset time has elapsed from the start of measurement in step S35. If not (No), the measurement is continued. On the other hand, if it is determined in step S36 that the set time has elapsed (Yes), the leak rate is calculated from the pressure increase rate within the measurement time (step S37).

  The time transition of the pressure P1 measured by such processing is shown in FIG. 16 (straight line a). 16 shows a case where an APC valve with a gate valve mechanism is provided instead of the APC valve 21 of the vacuum apparatus 1 of FIG. 1, and the APC with a gate valve mechanism is completely closed after evacuating by the dry pump 24. (Line b), together with the measurement results by the build-up method when the APC with a gate valve mechanism is completely closed after evacuation by the turbo molecular pump 22 (Line c).

  From FIG. 16, the straight lines a to c have different measurement start pressures, but the slopes of the straight lines corresponding to the pressure increase rate are 0.143 for straight line a, 0.149 for straight line b, and 0.170 for straight line c. It was almost approximate. That is, it was shown that the leak rate measurement method of the third embodiment reflects the leak rate as in the build-up method (straight lines b and c). Therefore, it was confirmed that the actual leak rate can be measured by using the leak rate measuring method of the third embodiment.

<Fourth embodiment>
FIG. 17 is a flowchart showing a control sequence in the case of performing the leak rate measurement in the fourth embodiment, and FIG. 18 is a drawing showing the state of the exhaust section at the time of the leak rate measurement in the fourth embodiment. In the present embodiment, the leak rate is measured by starting the turbo molecular pump 22 and measuring the pressure in the vacuum chamber 2 with the APC valve 21 set to an arbitrary conductance.

  Steps S41 to S45 in FIG. 18 are sequences for determining the conductance of the APC valve 21, steps S46 to S48 are preparation sequences before the leak rate measurement, and steps S49 to S52 are leaks. It is a rate measurement sequence.

In the present embodiment, as a state before performing the leak check, the turbo molecular pump 22 and the dry pump 24 are activated, and the APC valve 21 is fully opened, the valve V1 is opened, and the valve V3 is opened.
In step S41, the valve V3 is closed. Next, a gas such as N ₂ is introduced from the gas supply source 12 at a preset flow rate into the vacuum chamber 2 (step S42). In step S43, the opening degree of the APC valve 21 is adjusted so that the inside of the vacuum chamber 2 becomes a predetermined pressure. In step S44, it is determined whether the pressure and flow rate in the vacuum chamber 2 are stable. As a result, when the stability of the pressure and the flow rate is insufficient (No), the measurement of the pressure and the flow rate is continued until it is further stabilized.
On the other hand, if it is determined in step S44 that the pressure and flow rate in the vacuum chamber 2 are stable (Yes), the opening (for example, position A) is stored in step S45.

In step S46, the APC valve 21 is fully opened, and then in step S47, the introduction of a gas such as N ₂ from the gas supply source 12 is stopped. In this state, the pressure P1 in the vacuum chamber 2 is monitored, and in step S48, it is determined whether or not the pressure P1 has become a specified value or less. As a result, when it is determined that the pressure P1 is not less than the specified value (No), the gas introduction stop state is maintained until the pressure P1 reaches the specified value or less. On the other hand, if it is determined in step S48 that the pressure P1 is less than or equal to the specified value (Yes), the opening degree of the APC valve 21 is adjusted to the position A stored in step S45 (step S49). In step S50, the process waits until the pressure P1 is stabilized, and then, in step S51, the pressure P1 in the vacuum chamber 2 is measured.

In the present embodiment, the leak rate is calculated from the value of the measured pressure P1 (step S52). In step S52, the leak rate is estimated by comparing the measured pressure P1 with the pressure in the vacuum chamber 2 at the predetermined opening (position A) calculated in advance.
For example, when the rate of pressure increase in the vacuum chamber 2 is 0.13 [Pa / min (1 × 10 ⁻³ Torr / min)] and the chamber volume is 50 [L], the leak rate on the specification is 6. 58 × 10 ⁻² [mL / min (sccm)]. Assuming this leak rate, the pressure value of the vacuum chamber at each conductance when the conductance of the APC valve 21 is set to 10 levels from 1 to 10 [L / sec] is calculated as shown in Table 1.

Therefore, in such a vacuum chamber 2, when the APC valve 21 is set to have a predetermined opening, for example, a conductance of 5 [L / sec], the pressure in the vacuum chamber 2 is 0.0022 Pa (1 .67 × 10 ⁻⁴ Torr), the actual leak rate can be estimated from the pressure P1. In the fourth embodiment, since the base pressure in the vacuum chamber 2 is measured and the leak rate is grasped by the magnitude, the conductance of the APC valve 21 is set to be small (that is, the opening degree is small). It is preferable to do. Accordingly, the conductance of the APC valve 21 is preferably set within a range of 1 to 10 [L / sec], for example, and more preferably set within a range of 1 to 5 [L / sec].

  As described above, it was confirmed that the leak rate can be measured by performing the processes of the first to fourth embodiments even in the vacuum apparatus 1 in which the gate valve (APC valve with a gate valve mechanism) is not provided.

  The present invention is not limited to the above embodiment, and various modifications can be made. For example, in the embodiment of FIG. 1, the parallel plate type plasma etching apparatus is taken as an example, but the present invention is not limited to this, and a magnetron RIE plasma etching apparatus using a permanent magnet, an inductively coupled plasma etching apparatus, etc. It can be applied to various plasma etching apparatuses. Furthermore, the present invention is not limited to an etching apparatus, and can be applied to various semiconductor manufacturing apparatuses that require processing in a high vacuum state, such as a film forming apparatus.

  The object of the present invention can also be achieved by causing the CPU of the EC 301 to read out and execute the program code stored in the storage medium on which the program code of the software that implements the functions of the above-described embodiments is recorded. Is done. In this case, the program code itself read from the storage medium realizes the above-described embodiment, and the program code and the storage medium storing the program code constitute the present invention. The storage medium for supplying the program code is, for example, a flexible disk, hard disk, magneto-optical disk, CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD + RW. Magnetic tape, nonvolatile memory card, ROM, etc. can be used. The program code may be downloaded via a network.

Furthermore, by executing the program code read by the CPU, not only the functions of the above-described embodiments are realized, but also an OS (operating system) or the like running on the CPU based on the instruction of the program code. A case where part or all of the actual processing is performed and the functions of the above-described embodiments are realized by the processing is also included.
Further, after the program code read from the storage medium is written in the memory provided in the function expansion board inserted in the EC 301 or the function expansion unit connected to the EC 301, the function expansion is performed based on the instruction of the program code. This includes the case where the CPU or the like provided in the board or the function expansion unit performs part or all of the actual processing, and the functions of the above-described embodiments are realized by the processing.

  Furthermore, the form of the program code may be in the form of object code, program code executed by an interpreter, script data supplied to the OS, and the like.

The schematic block diagram of the vacuum apparatus of this invention. Sectional drawing which shows schematic structure of the APC valve with a gate valve mechanism. It is drawing for demonstrating the outline | summary of a butterfly valve, (a) is a top view, (b) is sectional drawing which shows the use condition arranged adjacent to the turbo-molecular pump. The schematic block diagram explaining the modification of a vacuum device. Drawing which shows the outline | summary of the vacuum processing system provided with the vacuum apparatus. The schematic block diagram of a control part. The figure which shows the outline | summary of another vacuum processing system. The flowchart which shows the outline | summary of the leak rate measuring method which concerns on 1st Embodiment. The schematic diagram which shows the state of the exhaust part at the time of the leak rate measurement of 1st Embodiment. The graph which shows the pressure fluctuation of the vacuum chamber at the time of the measurement of the leak rate by 1st Embodiment. The flowchart which shows the outline | summary of the leak rate measuring method which concerns on 2nd Embodiment. The schematic diagram which shows the state of the exhaust part at the time of the leak rate measurement of 2nd Embodiment. The graph which shows the pressure fluctuation of the vacuum chamber at the time of the measurement of the leak rate by 2nd Embodiment. The flowchart which shows the outline | summary of the leak rate measuring method which concerns on 3rd Embodiment. The schematic diagram which shows the state of the exhaust part at the time of the leak rate measurement of 3rd Embodiment. The graph which shows the pressure fluctuation of the vacuum chamber at the time of the measurement of the leak rate by 3rd Embodiment. The flowchart which shows the outline | summary of the leak rate measuring method which concerns on 4th Embodiment. The schematic diagram which shows the state of the exhaust part at the time of the leak rate measurement of 4th Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1; Vacuum apparatus 2; Vacuum chamber 3; Susceptor 4; Exhaust port 5; Shower head 21; APC valve 22; Turbo molecular pump 23; Valve 24; Dry pump 30;

Claims (19)

From a vacuum chamber in which an object to be processed is accommodated for processing, a first exhaust pump connected to the vacuum chamber via a first valve that is a conductance variable valve, and the first exhaust pump A leak rate measuring method for measuring a leak rate of a vacuum device comprising a second valve connected downstream in the exhaust direction,
A circulation path branched from the exhaust path between the first exhaust pump and the second valve and connected to the vacuum chamber in a communicating state;
With the first valve set to a predetermined conductance and the second valve closed, gas is circulated to the vacuum chamber through the circulation path by the first exhaust pump, and the inside of the vacuum chamber is A method for measuring a leak rate, characterized by monitoring pressure. From a vacuum chamber in which an object to be processed is accommodated for processing, a first exhaust pump connected to the vacuum chamber via a first valve that is a conductance variable valve, and the first exhaust pump A leak rate measuring method for measuring a leak rate of a vacuum device comprising a second valve connected downstream in the exhaust direction,
With the first valve fully opened and the first exhaust pump activated, the second valve is closed, and the pressure in the exhaust path between the first exhaust pump and the second valve is reduced. A leak rate measuring method characterized by monitoring. A vacuum chamber that accommodates an object to be processed and performs processing; a first exhaust pump connected to the vacuum chamber via a first valve that is a conductance variable valve; and the first exhaust pump. A leak rate measuring method for measuring a leak rate of a vacuum device including a second exhaust pump connected via a second valve,
With the first valve fully opened and the first exhaust pump stopped, the second exhaust pump depressurizes the vacuum chamber to a predetermined pressure or lower, then closes the second valve, A leak rate measuring method, wherein the pressure in the vacuum chamber is monitored in a state. A vacuum chamber in which an object to be processed is accommodated and performing processing; a first exhaust pump connected to the vacuum chamber via a first valve that is a conductance variable valve; and a first exhaust pump A leak rate measuring method for measuring a leak rate of a vacuum device comprising a second valve connected downstream in the exhaust direction,
With the first exhaust pump activated and the second valve open, the first valve is set to a predetermined conductance and the pressure in the vacuum chamber is measured. Leak rate measurement method.   The leak rate is estimated by comparing the measured pressure with a pre-calculated pressure value inside the vacuum chamber when the first valve has a predetermined conductance. 5. The leak rate measuring method according to 4.   6. The leak rate measuring method according to claim 4, wherein the predetermined conductance is 10 L / second or less. A vacuum chamber in which an object to be processed is accommodated to perform processing;
A first exhaust pump connected to the vacuum chamber via a first valve that is a conductance variable valve having no gate valve mechanism;
A second valve connected downstream of the first exhaust pump in the exhaust direction;
A vacuum device equipped with.   The vacuum apparatus according to claim 7, further comprising a second exhaust pump connected downstream of the second valve in the exhaust direction.   The vacuum apparatus according to claim 8, wherein the first exhaust pump is a turbo molecular pump, and the second exhaust pump is a dry pump.   In the first valve, a pair of substantially semicircular plates are arranged symmetrically to form a valve body, and the opening degree is adjusted by rotating around the linear side portion of each plate. The vacuum device according to any one of claims 7 to 9, wherein the valve is a valve that variably adjusts conductance.   Furthermore, it has a circulation path branched from the exhaust path between the first exhaust pump and the second valve and connected to the vacuum chamber in a communication state. The vacuum apparatus according to any one of 10 above. From a vacuum chamber in which an object to be processed is accommodated for processing, a first exhaust pump connected to the vacuum chamber via a first valve that is a conductance variable valve, and the first exhaust pump A second valve connected downstream in the exhaust direction, and a circulation path branched from the exhaust path between the first exhaust pump and the second valve and connected in communication with the vacuum chamber. A program used to measure the leak rate in a vacuum device,
The program is at least on a computer.
Setting the first valve to a predetermined opening;
Circulating the gas to the vacuum chamber through the circulation path by the first exhaust pump with the second valve closed;
Monitoring the pressure in the vacuum chamber;
A program characterized by having executed. From a vacuum chamber in which an object to be processed is accommodated for processing, a first exhaust pump connected to the vacuum chamber via a first valve that is a conductance variable valve, and the first exhaust pump A program used to measure a leak rate in a vacuum device comprising a second valve connected downstream in the exhaust direction,
The program is at least on a computer.
Fully opening the first valve and closing the second valve with the first exhaust pump activated;
Monitoring the pressure in the exhaust path between a first exhaust pump and the second valve;
A program characterized by having executed. A vacuum chamber that accommodates an object to be processed and performs processing; a first exhaust pump connected to the vacuum chamber via a first valve that is a conductance variable valve; and the first exhaust pump. A second exhaust pump connected via a second valve, and a program used for measuring a leak rate in a vacuum apparatus comprising:
The program is at least on a computer.
Reducing the pressure in the vacuum chamber below a predetermined pressure by the second exhaust pump in a state where the first valve is fully opened and the first exhaust pump is stopped;
Then, closing the second valve;
Monitoring the pressure in the vacuum chamber with the second valve closed;
A program characterized by having executed. A vacuum chamber in which an object to be processed is accommodated and performing processing; a first exhaust pump connected to the vacuum chamber via a first valve that is a conductance variable valve; and a first exhaust pump A program used to measure a leak rate in a vacuum device comprising a second valve connected downstream in the exhaust direction,
The program is at least on a computer.
Setting the first valve to a predetermined opening in a state in which the first exhaust pump is operated and the second valve is opened;
Measuring the pressure in the vacuum chamber;
A program characterized by having executed.   The method further includes estimating a leak rate by comparing the measured pressure with a pressure value inside the vacuum chamber calculated in advance when the first valve is at a predetermined opening degree. The program according to claim 15.   The computer-readable storage medium which memorize | stored the program as described in any one of Claims 12-16. A vacuum apparatus including a vacuum chamber that accommodates an object to be processed and performs processing,
A vacuum apparatus, wherein the vacuum chamber is connected to a control unit that controls the leak rate measurement method according to any one of claims 1 to 6 to be performed in the vacuum chamber. A vacuum processing system comprising a plurality of vacuum devices according to claim 18,
It is connected to the control unit and supervises this, and comprises an overall control unit that controls the entire vacuum processing system,
Vacuum processing system.

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