JP2006294916A - Substrate processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To stably supply water vapor having a high cleanness. <P>SOLUTION: A pyrogenic oxidizer 10 comprises a process tube 11 forming a process chamber 12 for treating a wafer 1, a feed pipe 19 for feeding water vapor into the process chamber 12, and a water vapor generator 30 for sending water vapor to the feed pipe 19, and comprises a combustion pipe 31 connected to the feed pipe 19 of the vapor generator 30, and a gas jet nozzle 34 for jetting hydrogen gas and oxygen gas into the combustion chamber 32 of the combustion pipe 31. The gas jet nozzle 34 is dividably composed of a quartz outer pipe 35, a silicon carbide inner pipe 36 containing a trace of impurities, and a gas jet 37. The gas jet 37 has a gas jet hole 38 communicating with the inner pipe 36, and a plurality of gas jet holes 39 communicating with a space 40 between the outer and inner pipes 35, 36. A hydrogen gas feed pipe 42 is connected to the inner pipe 36, and an oxygen gas feed pipe 45 is connected to the outer pipe 35. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus. For example, in a method for manufacturing a semiconductor integrated circuit device (hereinafter referred to as an IC), an oxide film is formed on a semiconductor wafer (hereinafter referred to as a wafer) on which a semiconductor integrated circuit including semiconductor elements is formed. It is related with what is effective in the pyrogenic oxidation apparatus for forming.

A pyrogenic oxidation apparatus may be used in an oxide film forming process for forming an oxide film on a wafer in an IC manufacturing method.
The pyrogenic oxidation apparatus is configured to form an oxide film on a wafer by oxidizing water vapor (H ₂ O) generated by a water vapor generation apparatus (Pyrogenic apparatus) in contact with the wafer. For example, see Patent Document 1.
JP 2002-151499 A

The steam generator includes a combustion pipe that generates a water vapor by causing a combustion reaction between hydrogen (H ₂ ) gas and oxygen (O ₂ ) gas, and a gas jet nozzle that jets hydrogen and oxygen into the combustion pipe. In the combustion pipe, water and oxygen are combusted and reacted to generate water vapor.
In this type of conventional steam generator, the combustion tube and the gas jet nozzle are made of quartz (SiO ₂ ) material.

However, in the water vapor generating apparatus provided with a combustion tube and a gas jet nozzle made of quartz material, there are concerns about the following problems.
1) Quartz material has a higher impurity content than silicon carbide (SiC) material (silicon carbide material integrally formed by CVD method or silicon carbide material whose surface is coated with silicon carbide).
2) The formation of a thick oxide film requires a long combustion time or a high hydrogen / oxygen ratio.
3) In 2) above, devitrification and melting of the combustion tube due to combustion heat occur, so that impurities in the quartz material are supplied to the wafer together with gas such as water vapor, thereby deteriorating the electrical characteristics of the IC. There is a possibility to make it.

  An object of the present invention is to provide a substrate processing apparatus capable of stably supplying high-purity water vapor while avoiding the influence of a hydrogen / oxygen ratio and combustion time.

Typical means for solving the above-described problems are as follows.
(1) a processing chamber for processing a substrate;
A supply pipe for supplying a gas containing water vapor into the processing chamber;
A combustion pipe connected to the supply pipe to generate a water vapor by a combustion reaction of hydrogen and oxygen;
A gas ejection nozzle for ejecting hydrogen and oxygen into the combustion pipe,
The gas ejection nozzle includes an outer tube, an inner tube accommodated in the outer tube, and a gas ejection portion that is arranged at the distal end portion of the inner tube and the outer tube and separately ejects hydrogen and oxygen.
A substrate processing apparatus, wherein at least the inner tube and the gas ejection portion of the gas ejection nozzle are made of silicon carbide, and at least the outer tube is made of quartz.
(2) The substrate processing apparatus according to (1), wherein the gas ejection part and the inner tube are integrally formed.
(3) The substrate processing apparatus according to (1) or (2), wherein at least the gas ejection portion and the inner tube of the gas ejection nozzle are configured to be dividable with respect to the outer tube. .
(4) In the above (1), (2), or (3), the gas ejection portion includes at least one gas ejection port provided to communicate with the inner tube, the outer tube, and the inner tube. A substrate processing apparatus comprising: at least one gas jet port provided so as to communicate with a space between the two.
(5) In the above (1), (2), (3) or (4), the gas ejection nozzle includes a hydrogen gas introduction pipe for introducing hydrogen gas into the inner pipe, the outer pipe, the inner pipe, An oxygen gas introduction pipe for introducing oxygen gas into a space between the substrate processing apparatuses.
(6) A method of manufacturing a semiconductor device, comprising the step of processing a substrate using the substrate processing apparatus of (1).

According to the above (1), since the inner pipe and the gas jetting portion, which are likely to be very high in the gas jet nozzle, are formed of silicon carbide, the gas / jet ratio is cleaned while avoiding the influence of the hydrogen / oxygen ratio and the combustion time. High-degree steam can be supplied stably. Further, the manufacturing cost can be reduced by limiting the portion of the silicon carbide material that is difficult to process to the inner tube and the gas ejection portion.
On the other hand, it is preferable to form the outer tube and the combustion tube with quartz that transmits ultraviolet rays because the combustion state can be observed from the outside.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

In the present embodiment, the substrate processing apparatus according to the present invention is functionally configured as a pyrogenic oxidation apparatus which is an example of an oxide film forming apparatus for forming an oxide film on a wafer. It is configured as a batch type vertical hot wall heat treatment apparatus.
That is, as shown in FIG. 1, a substrate processing apparatus (hereinafter referred to as a pyrogenic oxidation apparatus) 10 according to the present embodiment is configured as a batch type vertical hot wall heat treatment apparatus.

The pyrogenic oxidizer 10 includes a process tube 11. The process tube 11 is made of quartz (SiO ₂ ) and is integrally formed in a cylindrical shape with both upper and lower ends opened. The process tube 11 is vertically arranged so that the center line is vertical, and is supported by a housing (not shown).
A cylindrical hollow portion of the process tube 11 forms a processing chamber 12, and the processing chamber 12 is configured to carry in a boat 20 that holds a plurality of wafers 1 concentrically aligned. The lower end opening of the process tube 11 constitutes a furnace port 13 for loading and unloading the boat 20 holding a plurality of wafers 1.
The upper end opening of the process tube 11 is covered with a dispersion plate 14, and the dispersion plate 14 is provided with a plurality of distribution holes 15 that disperse the gas throughout the processing chamber 12. Has been established in the direction.

  A heater unit 16 is concentrically provided outside the process tube 11 so as to surround the process tube 11, and the heater unit 16 is vertically installed by being supported by a housing. The heater unit 16 is configured to heat the inside of the processing chamber 12 uniformly or with a predetermined temperature distribution.

A seal cap 17 formed in a disc shape substantially equal to the outer diameter of the process tube 11 is disposed concentrically immediately below the process tube 11, and the seal cap 17 is a boat elevator (partially configured by a feed screw mechanism). Only is shown)) 18 is moved up and down in the vertical direction.
When the seal cap 17 is lifted by the boat elevator 18, the process chamber 12 is hermetically sealed by closely contacting the lower end surface of the process tube 11 with the seal ring 17 a interposed therebetween.

On the center line of the seal cap 17, the boat 20 is vertically supported and supported.
The boat 20 includes a pair of end plates 21 and 22 at the top and bottom, and a plurality of (three in this embodiment) holding members 23 installed between the end plates 21 and 22 and arranged vertically. Each holding member 23 is provided with a plurality of holding grooves 24 arranged at equal intervals in the longitudinal direction so as to be opened in the same plane.
Then, the outer peripheral portion of the wafer 1 is inserted into the three holding grooves 24 at the same time, so that the plurality of wafers 1 are held on the boat 20 so as to be aligned in a state where their centers are aligned with each other. ing.
A heat insulating cap portion 25 is formed under the lower end plate 22 of the boat 20, and a lower surface of the heat insulating cap portion 25 is formed in a disk shape having a slightly larger diameter than the outer diameter of the heat insulating cap portion 25. A base 26 is provided horizontally. The boat 20 is installed on the seal cap 17 by the base 26 being in contact with the upper surface of the seal cap 17 and being detachably fixed.

  An exhaust port 27 is opened at the lower part of the side wall of the process tube 11 so as to communicate with the processing chamber 12, and one end of an exhaust line 28 is connected to the exhaust port 27. An exhaust device 29 configured by a blower or the like is connected to the other end of the exhaust line 28.

A supply pipe 19 for supplying a gas containing water vapor is laid in the processing chamber 12 outside the process tube 11, and the supply pipe 19 extends in a vertical direction along a part of the process tube 11. In addition, the upper part of the dispersion plate 14 is covered.
Connected to the lower end of the supply pipe 19 is a water vapor generator (external combustion device) 30 for supplying a gas containing water vapor generated from hydrogen and oxygen.

As shown in FIG. 2, the water vapor generating device 30 includes a combustion pipe 31 that generates water vapor through a combustion reaction between hydrogen and oxygen. The combustion tube 31 is formed in a cylindrical shape whose both end surfaces are closed by quartz, and a combustion chamber 32 in which water and oxygen are subjected to a combustion reaction to generate water vapor is formed by a cylindrical hollow portion of the combustion tube 31.
One end of the delivery pipe 33 protrudes from the end surface of the combustion pipe 31 on the process tube 11 side so as to communicate with the combustion chamber 32. As shown in FIG. It is connected to the supply pipe 19 of the process tube 11.

One end of a gas ejection nozzle 34 for ejecting hydrogen and oxygen into the combustion chamber 32 is inserted and fixed to the end surface of the combustion tube 31 opposite to the delivery tube 33.
The gas ejection nozzle 34 has an outer tube 35 formed in a cylindrical shape with openings at both ends, an inner tube 36 formed in a small diameter cylindrical shape with one end closed and the other end opened, and hydrogen gas and oxygen gas separately. A gas jetting part 37 for jetting is provided, and the inner pipe 36 is concentrically accommodated in the outer pipe 35. The gas ejection portion 37 is formed in a disk shape having an outer diameter equal to the inner diameter of the outer tube 35, and is concentrically disposed at the closed end of the inner tube 36.
Of the gas ejection nozzle 34, the inner tube 36 and the gas ejection portion 37 are integrally formed and are formed of silicon carbide. The outer tube 35 of the gas ejection nozzle 34 is made of quartz, and is configured to be divided into the inner tube 36 and the gas ejection part 37 as shown in FIG.

On the center line of the gas ejection portion 37, a gas ejection port (hereinafter referred to as an inner gas ejection port) 38 communicating with the inside of the inner pipe 36 is opened. A plurality of gas outlets (hereinafter referred to as “outer gas outlets”) 39 communicating with the space 40 between the outer pipe 35 and the inner pipe 36 are arranged in a concentric circle at the intermediate portion of the gas outlet 37. Each of the outer gas outlets 39 is inclined and opened so as to intersect on an extension line on the ejection side of the inner gas outlet 38.
A seal member 41 that hermetically seals the space 40 between the outer tube 35 and the inner tube 36 is fitted between the open end of the outer tube 35 opposite to the combustion tube 31 and the outer periphery of the intermediate portion of the inner tube 36. Has been.

A hydrogen gas introduction pipe 42 for introducing hydrogen gas into the inner pipe 36 is connected by a coupling 43 to the end of the inner pipe 36 opposite to the gas ejection section 37 of the gas ejection nozzle 34.
One end of an elbow pipe 44 that communicates with the space 40 between the outer pipe 35 and the inner pipe 36 protrudes from an intermediate portion of the outer pipe 35 of the gas ejection nozzle 34. An oxygen gas introduction pipe 45 that introduces oxygen gas into a space 40 between the outer pipe 35 and the inner pipe 36 is connected by a coupling 46.
A thermocouple 47 for measuring the temperature in the combustion tube 31 is inserted into the end surface of the combustion tube 31 on the gas ejection nozzle 34 side. Although illustration is omitted, the thermocouple 47 is configured to transmit a measurement result to a controller that controls the pyrogenic oxidizer 10.

As shown in FIG. 1, the hydrogen gas introduction pipe 42 is connected to a hydrogen gas supply source 50 via a variable flow rate control valve (mass flow controller) 48 and a cock 49.
The oxygen gas introduction pipe 45 is connected to an oxygen gas supply source 53 via a variable flow control valve 51 and a cock 52.
Further, a nitrogen gas introduction pipe 54 is connected to the hydrogen gas introduction pipe 42, and the nitrogen gas introduction pipe 54 is connected to a nitrogen gas supply source 57 via a variable flow rate control valve 55 and a cock 56.
A heater 59 covered with a container 58 is installed outside the combustion tube 31, and the heater 59 heats the inside of the combustion chamber 32.

  The variable flow rate control valves 48, 51, and 55, the cocks 49, 52, and 56 and the heater 59 of the steam generator 30 are controlled together with the heater unit 16 and the like of the pyrogenic oxidizer 10 by a controller constructed by a computer. ing.

  As shown in FIG. 1, one end of a bypass line 60 is connected to the delivery pipe 33 of the water vapor generating device 30, and the other end of the bypass line 60 is connected to the exhaust line 28. A cock 61 is interposed in the middle of the bypass line 60, and the cock 61 is normally closed and configured to open during the purge step.

  A purge gas introduction pipe 62 is laid on the outside of the process tube 11 opposite to the supply pipe 19, and the purge gas introduction pipe 62 extends in the vertical direction along a part of the process tube 11. At the same time, it is connected to the supply pipe 19 and covers the upper side of the dispersion plate 14. A purge gas introduction line 63 is connected to the lower end of the purge gas introduction pipe 62, and a nitrogen gas supply source 64 is connected to the purge gas introduction line 63 via a cock 65.

  Next, an oxide film forming process in the IC manufacturing method by the pyrogenic oxidation apparatus 10 according to the above configuration will be described.

As shown in FIG. 1, in the oxide film forming process, the boat 20 in which a plurality of wafers 1 are aligned and held is placed on the seal cap 17 in a state in which the direction in which the group of wafers 1 is arranged is vertical. Is done. In this state, the boat 20 is lifted by the boat elevator 18, is carried into the processing chamber 12 from the furnace port 13 of the process tube 11, and is left in the processing chamber 12 while being supported by the seal cap 17. .
When the boat 20 reaches the upper limit position, the seal cap 17 is brought into close contact with the lower end surface of the process tube 11 with the seal ring 17a interposed therebetween, so that the processing chamber 12 is hermetically closed.

  When the processing chamber 12 is hermetically closed by the seal cap 17, the inside of the processing chamber 12 is exhausted by the exhaust line 28 and heated to a predetermined temperature (about 750 ° C.) by the heater unit 16.

Subsequently, when the cock 49 of the hydrogen gas introduction pipe 42 is opened, the hydrogen gas whose flow rate is adjusted by the variable flow rate control valve 48 is transferred from the hydrogen gas supply source 50 to the inner pipe of the gas ejection nozzle 34 of the water vapor generating device 30. 36. The hydrogen gas supplied to the inner pipe 36 is ejected from the inner gas ejection port 38 of the gas ejection part 37 to the combustion chamber 32.
At the same time, when the cock 52 of the oxygen gas introduction pipe 45 is opened, the oxygen gas whose flow rate is adjusted by the variable flow rate control valve 51 is supplied from the oxygen gas supply source 53 to the outer pipe 35 of the gas ejection nozzle 34 of the water vapor generating device 30. And the space 40 between the inner pipe 36 and the inner pipe 36. The oxygen gas supplied to the space 40 is ejected from the plurality of outer gas ejection ports 39 of the gas ejection part 37 to the combustion chamber 32.

When the temperature of the combustion chamber 32 of the water vapor generator 30 is raised by the heater 59 above the combustion temperature of the hydrogen gas, the hydrogen gas ejected from the inner gas outlet 38 is ignited, and the hydrogen gas and a plurality of outer gas jets are ignited. Water vapor is generated in the combustion chamber 32 because the oxygen gas ejected from the outlet 39 undergoes a combustion reaction.
At this time, the plurality of outer gas outlets 39 are opened so as to intersect on the extension line of the inner gas outlet 38 on the ejection side, so that the hydrogen gas and the oxygen gas undergo a combustion reaction very effectively.
Here, since the inner pipe 36 and the gas ejection part 37 are formed of silicon carbide having a small impurity content, the phenomenon that impurities in the gas ejection part 37 and the inner pipe 36 are generated even at a very high temperature. Can be prevented.
Therefore, since impurities in the gas ejection part 37 and the inner tube 36 are not supplied to the wafer together with gas such as water vapor, there is no possibility of deteriorating the electrical characteristics of the IC.
Further, for example, when a thick oxide film is formed, the thick oxide film can be formed while shortening the combustion time by setting the hydrogen / oxygen ratio high.
In addition, since the gas ejection part 37 and the inner pipe 36 that are likely to become extremely high due to the combustion reaction of hydrogen gas and oxygen gas are formed of silicon carbide having a low impurity content, the gas ejection part 37 and Even if melting occurs in the inner tube 36, there are few impurities.

The steam generated by the steam generator 30 is sent to the supply pipe 19 from the delivery pipe 33 of the combustion pipe 31 as a processing gas (oxidizing gas) together with hydrogen gas and oxygen gas, and is supplied to the processing chamber 12 of the process tube 11 by the supply pipe 19. Is supplied and is evenly distributed throughout the processing chamber 12 by the dispersion plate 14.
The introduction time of the processing gas as a gas containing water vapor as an oxidizing species, that is, the processing time of the oxidation step is 30 minutes to 120 minutes. The pressure in the processing chamber 12 is normal pressure (atmospheric pressure).

The processing gas uniformly dispersed in the processing chamber 12 by the dispersion plate 14 flows down through the processing chamber 12 while uniformly contacting each of the plurality of wafers 1 held in the boat 20. Exhaust power is exhausted to the outside of the processing chamber 12.
An oxide film is formed on the surface of the wafer 1 by the oxidation reaction of water vapor by the contact of the processing gas with the surface of the wafer 1.

When a preset processing time during which the oxide film is formed to a desired thickness has elapsed, the supply of oxygen gas and hydrogen gas to the combustion chamber 32 of the steam generator 30 is stopped.
Next, the cock 56 of the nitrogen gas introduction pipe 54 connected to the steam generator 30 is opened, and the cock 61 of the bypass line 60 is opened.
When the cock 56 of the nitrogen gas introduction pipe 54 connected to the steam generator 30 is opened, the nitrogen gas whose flow rate is adjusted by the variable flow rate control valve 55 is supplied from the nitrogen gas supply source 57 to the inner pipe of the gas ejection nozzle 34. 36. The nitrogen gas supplied to the inner pipe 36 is ejected from the inner gas ejection port 38 of the gas ejection part 37 to the combustion chamber 32.
At this time, since the cock 61 of the bypass line 60 is opened, the nitrogen gas ejected from the inner gas ejection port 38 to the combustion chamber 32 of the water vapor generating device 30 is exhausted by the exhaust device 29 connected to the exhaust line 28. Is led to the bypass line 60 and discharged to the exhaust line 28.
At this time, the nitrogen gas introduced from the nitrogen gas introduction pipe 54 flows through the inner pipe 36 of the gas ejection nozzle 34 → the combustion chamber 32 → the delivery pipe 33 → the bypass line 60 → the exhaust line 28, whereby the inner pipe 36. In addition, residues such as processing gas and reaction products remaining in the inner gas outlet 38, the combustion chamber 32, and the delivery pipe 33 are surely pushed away. That is, since the residue in the flow path including the combustion chamber 32 is discharged through the bypass line 60, the residue does not flow out to the processing chamber 12 side.

When the cock 56 of the nitrogen gas introduction pipe 54 connected to the water vapor generating device 30 is opened and the cock 65 of the other purge gas introduction line 63 is opened at the same time, the nitrogen gas of the nitrogen gas supply source 64 is replaced with the purge gas introduction line 63 To the purge gas introduction pipe 62.
Nitrogen gas supplied from the purge gas introduction line 63 to the purge gas introduction pipe 62 is introduced into the processing chamber 12 of the process tube 11 through the purge gas introduction pipe 62, and is uniformly dispersed throughout the processing chamber 12 by the dispersion plate 14.
The nitrogen gas uniformly dispersed in the processing chamber 12 by the dispersion plate 14 flows down the processing chamber 12 while uniformly contacting each of the plurality of wafers 1 held in the boat 20, and from the exhaust port 27 to the exhaust line 28. Exhaust power is exhausted to the outside of the processing chamber 12. Residues such as water vapor, hydrogen gas, and reaction products remaining in the processing chamber 12 are swept away by the flow of this nitrogen gas.

At this time, since the cock 61 of the bypass line 60 is opened, a part of the nitrogen gas supplied from the purge gas introduction line 63 to the purge gas introduction pipe 62 is exhausted from the exhaust line 28 applied to the bypass line 60. The air is sucked into the supply pipe 19 by the exhaust force and is discharged to the supply pipe 19 → the delivery pipe 33 of the steam generator 30 → the bypass line 60 → the exhaust line 28.
Residues such as processing gas and reaction products remaining in the supply pipe 19 and the delivery pipe 33 are pushed away by the flow of this nitrogen gas.
At this time, by setting the pressure on the steam generator 30 side higher than the pressure on the bypass line 60 side, the phenomenon that the nitrogen gas on the supply pipe 19 side flows backward to the combustion chamber 32 side of the steam generator 30 is prevented. can do.

When the above purge step is completed, a boat unloading (boat unloading) step is performed. That is, the seal cap 17 is lowered by the boat elevator 18 and the boat 20 is unloaded from the processing chamber 12.
When the boat unloading step is completed, a wafer discharging step for taking out the processed wafer 1 from the boat 20 is executed.

  Thereafter, by repeating the above-described operation, wafers are batch processed by the pyrogenic oxidizer.

  According to the embodiment, the following effects can be obtained.

1) By preventing the occurrence of impurities in the gas ejection part and the inner tube even at very high temperatures, it is possible to prevent the electrical characteristics of the IC from being deteriorated by the impurities, and For example, in the case of forming a thick oxide film, the hydrogen / oxygen ratio can be set high, so that the thick oxide film can be formed while shortening the combustion time in the steam generator.

2) The gas injection part and the inner pipe, which are likely to become very high due to the combustion reaction of hydrogen gas and oxygen gas, are formed by silicon carbide with a low content of impurities. Even if this occurs, the generated impurities can be suppressed, so that the impurities in the gas ejection part and the inner tube can be suppressed from being supplied to the wafer together with a gas such as water vapor.

3) By limiting the portion of the silicon carbide material that is difficult to process to the inner pipe and the gas jetting part, the manufacturing cost of the gas jetting nozzle can be reduced. Can be reduced.

4) On the other hand, the outer tube and the combustion tube of the gas injection nozzle are made of quartz that transmits ultraviolet rays, so that the combustion state in the combustion chamber can be observed from the outside. Combustion can be prevented.

5) By making the gas jetting part and inner pipe of the gas jet nozzle separable from the outer pipe, silicon carbide gas jetting part and inner pipe and quartz outer pipe are manufactured separately. Therefore, it is possible to easily form only the gas ejection part and the inner tube of the gas ejection nozzle with silicon carbide, and to reduce the manufacturing cost of the gas ejection nozzle, and Also, maintenance can be easily performed.

6) An inner gas outlet that communicates with the inside of the inner pipe is opened on the center line of the gas outlet of the gas outlet nozzle, and the space between the outer pipe and the inner pipe is outside the inner gas outlet of the gas outlet. By opening the communicating outer gas outlet, hydrogen gas and oxygen gas can be effectively mixed, so that the efficiency of the combustion reaction between hydrogen gas and oxygen gas can be increased.

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  For example, the gas ejection portion and the inner tube of the gas ejection nozzle are not limited to being integrally formed of silicon carbide, but may be formed by coating a silicon carbide film on a quartz material.

The number of the inner gas outlets communicating with the inner pipe is not limited to one on the center line of the gas ejection portion of the gas ejection nozzle, and a plurality of inner gas ejection outlets may be opened. That is, at least one gas jet port communicating with the inner pipe may be opened.
Further, the number of outer gas jets communicating with the space between the outer pipe and the inner pipe is not limited to a plurality of outer gas jets outside the inner gas jet of the gas jetting part, but only one may be opened. In other words, at least one gas jet opening communicating with the space between the outer pipe and the inner pipe may be opened.

  In the above embodiment, the case where the wafer is processed has been described. However, the substrate to be processed may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

It is a front sectional view showing a pyrogenic oxidation device which is one embodiment of the present invention. It is a partially omitted front sectional view showing a steam generator. It is a decomposition | disassembly front sectional drawing which shows the outer tube | pipe of a gas ejection nozzle, an inner tube | pipe, and a gas ejection part.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate), 10 ... Pyrogenic oxidation apparatus (batch type | mold vertical hot wall type heat processing apparatus, substrate processing apparatus), 11 ... Process tube, 12 ... Processing chamber, 13 ... Furnace opening, 14 ... Dispersion plate, 15 ... Flow hole, 16 ... heater unit, 17 ... seal cap, 17a ... seal ring, 18 ... boat elevator, 19 ... supply pipe, 20 ... boat, 21, 22 ... end plate, 23 ... holding member, 24 ... holding groove, 25 ... heat insulation cap part, 26 ... base, 27 ... exhaust port, 28 ... exhaust line, 29 ... exhaust device, 30 ... steam generator, 31 ... combustion pipe, 32 ... combustion chamber, 33 ... delivery pipe, 34 ... gas ejection nozzle 35 ... Outer tube, 36 ... Inner tube, 37 ... Gas ejection part, 38 ... Inner gas ejection port, 39 ... Outer gas ejection port, 40 ... Space between outer tube and inner tube, 41 ... Seal member, 42 …hydrogen , 43 ... coupling, 44 ... elbow pipe, 45 ... oxygen gas introduction pipe, 46 ... coupling, 47 ... thermocouple, 48 ... variable flow control valve, 49 ... cock, 50 ... hydrogen gas supply source, 51 ... Variable flow control valve, 52 ... Cock, 53 ... Oxygen gas supply source, 54 ... Nitrogen gas introduction pipe, 55 ... Variable flow control valve, 56 ... Cock, 57 ... Nitrogen gas supply source, 58 ... Vessel, 59 ... Heater, 60 ... bypass line, 61 ... cock, 62 ... purge gas introduction pipe, 63 ... purge gas introduction line, 64 ... nitrogen gas supply source, 65 ... cock.

Claims (1)

A processing chamber for processing the substrate;
A supply pipe for supplying a gas containing water vapor into the processing chamber;
A combustion pipe connected to the supply pipe to generate a water vapor by a combustion reaction of hydrogen and oxygen;
A gas ejection nozzle for ejecting hydrogen and oxygen into the combustion pipe,
The gas ejection nozzle includes an outer tube, an inner tube accommodated in the outer tube, and a gas ejection portion that is arranged at the distal end portion of the inner tube and the outer tube and separately ejects hydrogen and oxygen.
A substrate processing apparatus, wherein at least the inner tube and the gas ejection portion of the gas ejection nozzle are made of silicon carbide, and at least the outer tube is made of quartz.

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