JP2006294885A - Surface emitting semiconductor laser and its manufacturing method, and surface emitting semiconductor laser array - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser which prevents formation (deposition) of an insulation material in an electrode surface while ensuring good adhesion between an electrode and a polyimide protection film. <P>SOLUTION: In the surface emitting semiconductor laser, a polyimide protection film 8 is provided to a surface of a laser structure with a resonator comprising an active layer 4, and multilayer film reflection mirrors 3, 7 provided up and down the resonator on a semiconductor substrate 1. Electrode 9 in contact with a surface of the polyimide protection film 8 is formed of a metallic material containing Cr. A metallic material 10 which does not contain Cr is provided on the electrode 9 formed of the metallic material containing Cr. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a surface emitting semiconductor laser, a manufacturing method thereof, and a surface emitting semiconductor laser array.

  A surface emitting semiconductor laser (VCSEL: Vertical Cavity Surface Emitting Laser) is lower in manufacturing cost than an edge emitting semiconductor laser, and a laser in a long wavelength band (for example, a wavelength band of 1.1 μm or more) is a quartz fiber. It is expected to be used in fields such as optical communication and optical interconnection. VCSELs are expected to be used in fields such as optical recording modules because they can be easily integrated by arraying.

  The VCSEL has a structure having a laser oscillation part having a mesa structure. That is, the VCSEL is a semiconductor laminate in which an n-type semiconductor multilayer reflector, a lower spacer layer, a multi-well active layer, an upper spacer layer, a low refractive index layer, and a p-type semiconductor multilayer reflector are sequentially laminated on an n-type GaAs substrate. The body is etched vertically to form a mesa, the mesa side wall and the periphery are covered with an insulator, and then flattened with a polyimide protective film, and a laser beam is emitted from the light emitting surface opened on the surface of the mesa. ing. The upper electrode is wired (wiring electrode) on the polyimide protective film from the contact region on the surface of the mesa and connected to the bonding pad.

  In such a configuration, since the wiring electrode and the bonding pad are formed on the polyimide protective film, the wiring electrode and the bonding pad include a metal material containing Cr for the purpose of improving the adhesion between the metal material and the polyimide protective film. Is used.

Patent Document 1 shows that the wiring electrode and bonding pad portions that are in contact with the polyimide protective film are formed of a material containing Ti or Cr, and oxygen atoms are formed by performing oxygen plasma treatment on the surface of the polyimide protective film. For example, when a wiring electrode and a bonding pad containing Ti or Cr are formed in the first layer, TiO _x or CrO _y is formed at the interface between the polyimide protective film interface and the wiring electrode and bonding pad. Thus, the bonding force between the polyimide protective film, the wiring electrode, and the bonding pad is strengthened, so that the film peeling of the wiring electrode and the bonding pad can be prevented.

Note that Ti is a metal material that has a high melting point and is easy to react with the W boat, so that it is difficult to evaporate.
JP 2002-335045 A

  However, when an annealing process is performed to form an ohmic after forming an electrode with a metal material containing Cr, Cr deposited on the metal surface (electrode surface) reacts with oxygen in the metal material containing Cr, and an insulator is formed. It has been found that a problem occurs that the electrical connection of the electrode surface is hindered.

As an example, Cr is deposited on a polyimide protective film by several nm by vapor deposition, AuZn is formed by 15 nm for ohmic contact with GaAs, Au is deposited by 200 nm as an electrode material, and in N ₂ . When annealed at 400 ° C for 5 minutes, continuity failure occurs during probing for property evaluation every time, and continuity can be obtained by rubbing the tip of the needle on the bonding pad several times. did it. This phenomenon is considered that Cr in the polyimide protective film that does not react with O diffuses in AuZn / Au by the heat of annealing and reaches the Au surface to become an oxide. This is supported by the fact that the peak of Cr was detected as a result of qualitative analysis on the bonding pad by EPMA (Electron Probe Micro Analyzer).

  The present invention relates to a surface emitting semiconductor laser, a method for manufacturing the same, and a surface emitting semiconductor laser array that prevent formation (precipitation) of an insulator on the electrode surface while improving the adhesion between the electrode and the polyimide protective film. It is intended to provide.

  In order to achieve the above object, an invention according to claim 1 is provided on a surface of a laser structure section having a resonator including an active layer and multilayer reflectors provided above and below the resonator on a semiconductor substrate. In a surface emitting semiconductor laser in which a polyimide protective film is provided and an electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr, Cr is applied on the electrode portion formed of a metal material containing Cr. A metal material not included is provided.

  According to a second aspect of the present invention, in the surface emitting semiconductor laser according to the first aspect, the electrode portion made of a metal material containing Cr is constituted by at least a wiring electrode portion and a bonding pad portion. It is characterized by being.

  According to a third aspect of the present invention, in the surface-emitting type semiconductor laser according to the first or second aspect, the metal material not containing Cr is at least on the electrode portion formed of a metal material containing Cr. It is characterized by being provided in part.

  According to a fourth aspect of the present invention, there is provided a surface emitting semiconductor laser comprising a plurality of the surface emitting semiconductor lasers according to any one of the first to third aspects arranged in an array. It is an array.

  According to a fifth aspect of the present invention, a polyimide protective film is provided on a surface of a laser structure portion having a resonator including an active layer and multilayer reflectors provided above and below the resonator on a semiconductor substrate. In the method of manufacturing a surface emitting semiconductor laser in which the electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr, an annealing process is performed after the electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr And after performing the annealing step, a metal material not containing Cr is formed on the metal material containing Cr.

  According to a sixth aspect of the present invention, a polyimide protective film is provided on a surface of a laser structure portion having a resonator including an active layer and multilayer reflectors provided above and below the resonator on a semiconductor substrate. In the method of manufacturing a surface emitting semiconductor laser in which the electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr, an annealing process is performed after the electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr After the annealing process is performed, Cr on the surface of the metal material containing Cr is removed.

The invention according to claim 7 is the method for manufacturing a surface emitting semiconductor laser according to claim 6, wherein Cr on the surface of the metal material containing Cr is removed by wet etching with Cr etchant or dry etching by O ₂ plasma ashing. It is characterized by doing.

  According to the first to third aspects of the present invention, polyimide protection is provided on the surface of a laser structure portion having a resonator including an active layer and multilayer reflectors provided above and below the resonator on a semiconductor substrate. In a surface emitting semiconductor laser in which a film is provided and an electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr, the electrode portion formed of a metal material containing Cr does not contain Cr Since a metal material is provided, it is possible to prevent the formation (precipitation) of the insulator on the electrode surface while improving the adhesion between the electrode and the polyimide protective film, and it is possible to prevent electrical contact during probing and bonding. The influence on the connection can be significantly reduced.

  According to a fourth aspect of the present invention, there is provided a surface-emitting type comprising a plurality of the surface-emitting type semiconductor lasers according to any one of the first to third aspects. Since it is a semiconductor laser array, it is possible to provide a surface emitting semiconductor laser array that can significantly reduce the influence of electrical connection during probing and bonding.

  According to the invention described in claim 5, the polyimide protective film is formed on the surface of the laser structure portion having the resonator including the active layer on the semiconductor substrate and the multilayer mirrors provided above and below the resonator. In a method of manufacturing a surface emitting semiconductor laser, wherein an electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr, and after the electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr An annealing process is performed, and after performing the annealing process, a metal material not containing Cr is formed on the metal material containing Cr, and after the heat treatment process is finished, the metal material not containing Cr contains Cr. By forming on a metal material, it is effective that Cr does not diffuse in the metal material that does not contain Cr, and that an insulator is formed on the metal material surface (that is, the electrode surface). It can be prevented.

  According to the sixth and seventh aspects of the present invention, on the surface of the laser structure section having the resonator including the active layer and the multilayer reflectors provided above and below the resonator on the semiconductor substrate. In a method of manufacturing a surface emitting semiconductor laser provided with a polyimide protective film and forming an electrode part in contact with the surface of the polyimide protective film with a metal material containing Cr, the electrode part in contact with the surface of the polyimide protective film is a metal material containing Cr After the annealing process is performed, Cr is removed from the metal material surface (electrode surface) containing Cr after the annealing process is performed, so that an insulator is formed on the metal material surface (that is, the electrode surface). Can be effectively prevented, and the influence on electrical connection during probing and bonding can be significantly reduced.

In particular, according to the invention described in claim 7, by removing Cr on the surface of the metal electrode by wet etching using a Cr etchant or O ₂ plasma treatment, the metal material is not affected without affecting the characteristics of the surface emitting semiconductor laser. Formation of an insulator on the surface (electrode surface) can be prevented.

  Hereinafter, the best mode for carrying out the present invention will be described with reference to the drawings.

  FIGS. 1A and 1B are views for explaining a conventional method of manufacturing a surface emitting semiconductor laser. 1A is a sectional view, and FIG. 1B is a plan view. Referring to FIGS. 1A and 1B, an n-type semiconductor multilayer reflector 2, a GaAs lower spacer layer 3, a GaInNAs / GaAs multiple quantum well active layer 4, and a GaAs upper spacer are formed on an n-type GaAs substrate 1. The layer 5, the low refractive index layer 6 including the AlAs layer, and the p-type semiconductor multilayer film layer 7 are formed in this order, and have a mesa structure by etching.

  The periphery of the mesa is flattened with a polyimide protective film 8, and an electrode portion 9 (upper part) is formed to make electrical connection with the surface of the p-type semiconductor multilayer film layer 7 (the outermost surface is a contact layer). An electrode portion 12, a wiring electrode portion 13, and a bonding pad portion 14) are formed.

  Here, in the formation of the electrode portion 9, Cr for improving adhesion, AuZn for making ohmic contact, and Au are continuously formed, and patterning is performed as shown in FIGS. 1 (a) and 1 (b). Thereafter, an n-side electrode 11 is formed, and then an annealing process is performed, whereby a conventional surface emitting semiconductor laser can be manufactured.

  However, in this method, Cr reaches the outermost surface by diffusion in AuZn / Au by the annealing process, and Cr is oxidized, so that a thin insulating film is formed and electrical conduction is inhibited.

  The following embodiments of the present invention are for solving such a conventional problem.

(First form)
In the first embodiment of the present invention, a polyimide protective film is provided on the surface of a laser structure portion having a resonator including an active layer and multilayer reflectors provided above and below the resonator on a semiconductor substrate, In the surface emitting semiconductor laser in which the electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr, the metal material not containing Cr is provided on the electrode portion formed of the metal material containing Cr. It is characterized by having.

  In the surface-emitting type semiconductor laser according to the first embodiment, since the electrode portion is formed of a metal material containing Cr, the adhesion between the electrode portion and the polyimide protective film can be improved. Furthermore, in the surface-emitting type semiconductor laser according to the first embodiment, since the metal material not containing Cr is provided on the electrode portion formed of the metal material containing Cr, formation of an insulator on the electrode surface ( Deposition) can be prevented, and the influence on electrical connection during probing and bonding can be significantly reduced.

  Here, the electrode portion formed of a metal material containing Cr is composed of at least a wiring electrode portion and a bonding pad portion. That is, for example, only the wiring electrode portion and the bonding pad portion may be formed of a metal material containing Cr, and in addition to the wiring electrode portion and the bonding pad portion, the upper electrode portion is also formed of a metal material containing Cr. May be.

  Further, the metal material not containing Cr is provided on at least a part of the electrode portion formed of the metal material containing Cr. That is, for example, when the electrode part formed of a metal material containing Cr is a wiring electrode part and a bonding pad part, the metal material not containing Cr is all of the wiring electrode part and the bonding pad part. For example, it can be provided only on the bonding pad portion and not on the wiring electrode portion. That is, in the electrode part, electrical connection at the time of probing or bonding is made at the bonding pad part. Therefore, if a metal material not containing Cr is provided on the bonding pad part (that is, an insulator is provided on the bonding pad part) As long as it is prevented from forming), the influence on electrical connection during probing and bonding can be significantly reduced.

  Next, the first embodiment of the present invention will be described more specifically.

  2A and 2B are diagrams showing a specific example of the first embodiment of the present invention. 2A is a sectional view and FIG. 2B is a plan view. 2A and 2B, the upper electrode portion 12, the wiring electrode portion 13 and the bonding pad portion 14 of the electrode portion 9 contain Cr as in the conventional surface emitting semiconductor laser. It is formed of a metal material, and thereby the adhesiveness with the polyimide protective film 8 is good.

  2A and 2B, the metal material 10 not containing Cr is formed on the bonding pad portion 14 of the electrode portion 9, whereby the outermost surface of the bonding pad portion 14 is formed. It is possible to effectively prevent the formation of Cr oxide. In the example of FIGS. 2A and 2B, the metal material 10 not containing Cr is formed on the bonding pad portion 14, but it may be placed on the upper electrode portion 12 and the wiring electrode portion 13. In this case, patterning can be performed with a photomask for patterning the electrode portion 9 containing Cr.

  The first embodiment will be described in more detail.

  2A and 2B, an n-type semiconductor multilayer mirror 2, a GaAs lower spacer layer 3, a GaInNAs / GaAs multiple quantum well active layer 4, on an n-type GaAs substrate 1, A GaAs upper spacer layer 5, a low refractive index layer 6 including an AlAs layer, and a p-type semiconductor multilayer film reflecting mirror 7 are formed in this order.

FIGS. 3A to 3E are views showing an example of a manufacturing process of the surface emitting semiconductor laser shown in FIGS. 2A and 2B. In this manufacturing process example, first, as shown in FIG. 3A, GaAs and Al _0.9 Ga _0.1 As are formed on the n-type GaAs substrate 1 by metal organic chemical vapor deposition (MOCVD). The lower DBR (n-type semiconductor multilayer mirror) 2 is formed by alternately laminating (for example, 35 layers) with a thickness such that the optical length is ¼λ with respect to the oscillation wavelength of the laser, respectively. A resonator structure having an optical length λ is fabricated by sandwiching a quantum well active layer 4 composed of a GaInNAs layer between a GaAs lower spacer layer 3 and an upper spacer layer 5, and a low refractive index layer 6 including an AlAs layer thereon. The upper DBR (p-type semiconductor multilayer film reflecting mirror) 7 starting from (for example, 25 layers) is formed.

  Next, as shown in FIG. 3B, a photomask 20 for forming a mesa is formed by photolithography, and the laminated structure is etched under the active layer 4 by reactive ion etching. In this example, the mesa size is 20 μm × 20 μm, and the height of the mesa is ˜5 μm.

Next, as shown in FIG. 3C, after the photoresist 20 is peeled off, the AlAs layer 6 is oxidized using an oxidizer. Oxidation uses N ₂ gas as a carrier gas and oxidizes the AlAs layer 6 with water vapor. In order to make the oxidized constriction opening 5 μm, the oxidation is set to 7.5 μm. Thereafter, the SiO ₂ film 21 is formed by the P-CVD method, and then the polyimide protective film 8 is applied. Then, after patterning the upper part of the mesa so as to form the opening 15 by photolithography, SiO ₂ etching is performed using the polyimide protective film 8 as a mask, and plasma processing is performed in an O ₂ atmosphere at 200 W for 10 minutes.

  Next, as shown in FIG. 3D, a lift-off resist (not shown) is formed, and an electrode portion 9 is formed. That is, Cr16 (thickness 1.5 nm) / AuZn17 (thickness 15 nm) / Au18 (thickness 200 nm) is continuously formed by a vapor deposition method and lifted off, whereby the upper electrode portion 12, the wiring electrode portion 13, A bonding pad portion 14 is formed (see FIG. 2). The upper electrode portion 12 is provided with a window 15 for emitting light to the center, the wiring electrode portion 13 has a width of 10 μm, and the bonding pad portion has a size of 100 μm × 150 μm.

Next, AuGe (20 nm) / Au (200 nm) is vapor-deposited on the back surface of the substrate 1 as the n-side electrode 11, and then annealed at 400 ° C. for 5 minutes in an N ₂ atmosphere. Due to the heat of this annealing treatment, Cr may diffuse into AuZn17 / Au18 and reach the surface of Au18 in the electrode portion 9, and Cr may precipitate on the surface of the electrode portion 9.

  Next, as shown in FIG. 3 (e), a lift-off resist (not shown) is formed, Au10 is deposited to a thickness of 200 nm by a vapor deposition method, and lift-off is performed so that a metal not containing Cr is formed on the bonding pad portion 14. The electrode 10 can be formed. Since the metal electrode 10 that does not contain Cr is not subsequently heat-treated, Cr is not deposited on the surface of the metal electrode 10, and an insulator is not formed on the surface of the metal electrode 10.

  In the above example, the metal electrode 10 not containing Cr is formed of Au, but may be formed of a metal such as Pt, W, or Ti instead of Au. Moreover, although the film thickness of the metal electrode 10 not containing Cr is 200 nm, it is effective even if it is thinner than this.

  2A, 2B, and 3 have been described in the form of a single mesa, the present invention is effective even in an array-shaped mesa. That is, a surface-emitting type semiconductor laser array in which a plurality of the surface-emitting type semiconductor lasers of the first embodiment described above are arranged can also be configured.

(Second form)
According to a second aspect of the present invention, a polyimide protective film is provided on the surface of a laser structure section having a resonator including an active layer and multilayer reflectors provided above and below the resonator on a semiconductor substrate, In the surface emitting semiconductor laser in which the electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr, an annealing process is performed after the electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr. After the process is performed, Cr is removed from the surface of the metal material containing Cr.

  That is, in the second embodiment of the present invention, for example, Cr is diffused into AuZn / Au and reaches the Au surface by performing an annealing process after continuous film formation of, for example, Cr / AuZn / Au as an electrode portion. Although Cr precipitates, the formation of an insulating film on the Au surface can be prevented by removing Cr deposited on the Au surface.

Here, Cr removal can be performed by wet etching with a Cr etchant or dry etching by plasma ashing in an O ₂ atmosphere.

  The second embodiment will be described in more detail. The element configuration of the surface-emitting type semiconductor laser according to the second embodiment is basically the same as that shown in FIGS.

4A to 4D are views showing an example of a manufacturing process of the surface emitting semiconductor laser of the second embodiment. In this manufacturing process example, first, as shown in FIG. 4A, GaAs and Al _0.9 Ga _0.1 As are formed on the n-type GaAs substrate 1 by metal organic chemical vapor deposition (MOCVD). The lower DBR (n-type semiconductor multilayer mirror) 2 is formed by alternately laminating (for example, 35 layers) with a thickness such that the optical length is ¼λ with respect to the oscillation wavelength of the laser, respectively. A resonator structure having an optical length λ is fabricated by sandwiching a quantum well active layer 4 composed of a GaInNAs layer between a GaAs lower spacer layer 3 and an upper spacer layer 5, and a low refractive index layer 6 including an AlAs layer thereon. The upper DBR (p-type semiconductor multilayer film reflecting mirror) 7 starting from (for example, 25 layers) is formed.

  Next, as shown in FIG. 4B, a photomask 20 for forming a mesa is formed by photolithography, and the laminated structure is etched under the active layer 4 by reactive ion etching. In this example, the mesa size is 20 μm × 20 μm, and the height of the mesa is ˜5 μm.

Next, as shown in FIG. 4C, after the photoresist 20 is peeled off, the AlAs layer 6 is oxidized using an oxidizer. Oxidation uses N ₂ gas as a carrier gas and oxidizes the AlAs layer 6 with water vapor. In order to make the oxidized constriction opening 5 μm, the oxidation is set to 7.5 μm. Thereafter, the SiO ₂ film 21 is formed by the P-CVD method, and then the polyimide protective film 8 is applied. Then, after patterning so as to open the top 15 of the mesa by photolithography, SiO ₂ etching is performed using the polyimide protective film 8 as a mask, and plasma treatment is performed in an O ₂ atmosphere at 200 W for 10 minutes.

  Next, as shown in FIG. 4D, a lift-off resist (not shown) is formed, and the electrode portion 9 is formed. That is, Cr16 (thickness 1.5 nm) / AuZn17 (thickness 15 nm) / Au18 (thickness 200 nm) are continuously formed by vapor deposition and lifted off, so that the upper electrode portion 12, the wiring electrode portion 13, A bonding pad portion 14 is formed (see FIG. 1). The upper electrode portion 12 is provided with a window 15 for emitting light to the center, the wiring electrode portion 13 has a width of 10 μm, and the bonding pad portion has a size of 100 μm × 150 μm.

Next, AuGe (20 nm) / Au (200 nm) is vapor-deposited on the back surface of the substrate 1 as the n-side electrode 11, and then annealed at 400 ° C. for 5 minutes in an N ₂ atmosphere. Due to the heat of this annealing treatment, Cr may diffuse into AuZn17 / Au18 and reach the surface of Au18 in the electrode portion 9, and Cr may precipitate on the surface of the electrode portion 9.

  Next, a step of removing Cr deposited on the surface of the electrode 9 (Au18 surface) is performed. First, wet etching using a Cr etchant will be described.

Cr etchant is a commercially available product K3 (trade name: manufactured by Nagase Chemtech Co., Ltd.), which is a nitric acid additive and does not contain a chlorine substance. The Cr etchant is etched at room temperature for 5 minutes. When the Cr deposited on the surface of the electrode 9 (Au18 surface) is oxidized, it becomes difficult to etch. However, by performing the annealing step in a reducing atmosphere (for example, H ₂ gas), oxidation of Cr is suppressed and etching becomes easier. No insulator is formed on the (Au18 surface).

  Further, since the Cr etchant does not contain a chlorine substance, it does not violate a surface emitting semiconductor laser, and there is no deterioration in characteristics due to the Cr etching process.

Next, Cr removal by O ₂ plasma treatment will be described.

In the O ₂ plasma treatment, O ₂ gas is introduced into a vacuum vessel, and the plasma is discharged at a pressure of 0.1 Pa at 200 W for 20 minutes. By performing this plasma treatment, it is possible to remove Cr deposited on the surface of the electrode 9 (Au 18 surface), and no insulator is formed on the surface of the electrode 9 (Au 18 surface).

Since the O ₂ plasma treatment is a technique that is also used in the conventional surface emitting semiconductor laser process, there is no characteristic deterioration due to the O ₂ plasma treatment.

  As described above, in the second embodiment, the electrode portion in contact with the surface of the polyimide protective film is formed of a metal material containing Cr, and then the annealing process is performed. After the annealing process is performed, the surface of the metal material containing Cr (electrode surface) ) Is removed, it is possible to effectively prevent the formation of an insulator on the surface of the metal material (that is, the electrode surface), and the influence on electrical connection during probing and bonding can be significantly reduced.

In particular, according to the second embodiment, by removing Cr on the surface of the metal electrode by wet etching with Cr etchant or O ₂ plasma treatment, the surface of the metal material (without affecting the characteristics of the surface emitting semiconductor laser) Formation of an insulator on the electrode surface) can be prevented.

The present invention can be used for an optical transceiver module, an optical recording module, and the like.

It is a figure for demonstrating the manufacturing method of the conventional surface emitting semiconductor laser. It is a figure which shows the specific example of the 1st form of this invention. It is a figure which shows the example of a manufacturing process of the surface emitting semiconductor laser of a 1st form. It is a figure which shows the example of a manufacturing process of the surface emitting semiconductor laser of a 2nd form.

Explanation of symbols

1 n-type GaAs substrate 2 n-type semiconductor multilayer mirror 3 GaAs lower spacer layer 4 GaInNAs / GaAs multiple quantum well active layer 5 GaAs upper spacer layer 6 low refractive index layer including AlAs layer 7 p-type semiconductor multilayer reflector 8 Polyimide protective film 9 Electrode portion 11 N-side electrode 12 Upper electrode portion 13 Wiring electrode portion 14 Bonding pad portion 10 Metal material not containing Cr 20 Photoresist 15 Opening 21 SiO ₂ film 16 Cr
17 AuZn
18 Au

Claims (7)

An electrode portion in which a polyimide protective film is provided on the surface of a laser structure portion having a resonator including an active layer and multilayer reflectors provided above and below the resonator on a semiconductor substrate, and in contact with the surface of the polyimide protective film A surface emitting semiconductor laser in which a surface emitting semiconductor laser is formed of a metal material containing Cr, wherein a metal material not containing Cr is provided on an electrode portion formed of a metal material containing Cr Type semiconductor laser. 2. The surface emitting semiconductor laser according to claim 1, wherein the electrode portion made of a metal material containing Cr is composed of at least a wiring electrode portion and a bonding pad portion. laser. 3. The surface emitting semiconductor laser according to claim 1, wherein the metal material not containing Cr is provided on at least a part of the electrode portion made of a metal material containing Cr. A surface emitting semiconductor laser. A surface-emitting semiconductor laser array comprising a plurality of surface-emitting semiconductor lasers according to any one of claims 1 to 3 arranged. An electrode portion in which a polyimide protective film is provided on the surface of a laser structure portion having a resonator including an active layer and multilayer reflectors provided above and below the resonator on a semiconductor substrate, and in contact with the surface of the polyimide protective film In the method of manufacturing a surface emitting semiconductor laser in which a metal material containing Cr is formed, an annealing process is performed after an electrode portion in contact with the surface of the polyimide protective film is formed using a metal material containing Cr, and after performing the annealing process, A method of manufacturing a surface-emitting type semiconductor laser, comprising forming a metal material not containing Cr on a metal material containing Cr. An electrode portion in which a polyimide protective film is provided on the surface of a laser structure portion having a resonator including an active layer and multilayer reflectors provided above and below the resonator on a semiconductor substrate, and in contact with the surface of the polyimide protective film In the method of manufacturing a surface emitting semiconductor laser in which a metal material containing Cr is formed, an annealing step is performed after forming an electrode portion in contact with the surface of the polyimide protective film with a metal material containing Cr, and after performing the annealing step, A method of manufacturing a surface emitting semiconductor laser, comprising removing Cr from a surface of a metal material containing Cr. 7. The surface emitting semiconductor laser manufacturing method according to claim 6, wherein Cr is removed from the surface of the metal material containing Cr by wet etching with Cr etchant or dry etching by O ₂ plasma ashing. Laser manufacturing method.

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