JP2006294490A - Display device and manufacturing method of the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device capable of confining defect generated between an inter-electrode insulation film formed between electrodes, and an upper electrode to the minimum, for example, in one pixel, by dividing the inter-electrode insulation film between lower electrodes, and between lower electrode and an auxiliary electrode. <P>SOLUTION: On the display device 1, an organic EL element 31 having an organic layer 33 between the upper electrode 34 and the lower electrode 32 is formed on a second insulation layer 23 made of inorganic insulation film at every pixels, and the inter-electrode insulation layer 41 is arranged between adjacent lower electrodes 32, 32, and between the lower electrode 32 and the auxiliary electrode 35. The inter-electrode insulation layer 41 is divided at an area laid between lower electrodes 32, and between lower electrode 32 and an auxiliary electrode 35, and the second insulation layer 23 made of inorganic insulation film is connected to the upper electrode 34 at the area where the inter-electrode insulation layer 41 is divided. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a display device and a display device manufacturing method that can easily minimize defects of light emitting pixels without enlarging them.

  As one of flat display devices called flat panel displays, there is an organic EL display device using an organic electroluminescence (hereinafter referred to as organic EL) element as a light emitting element. A general organic EL element has a structure in which an organic material is sandwiched between an anode and a cathode. The light emission mechanism is such that holes are injected from an anode into an organic layer made of an organic material, electrons are injected from a cathode, and the injected holes and electrons are recombined to emit light.

  In the organic EL display device, the coverage of the protective film may be deteriorated due to a foreign substance on the panel. Deteriorating substances such as moisture and gas contained in the sealing resin are transmitted to the organic layer from the portion where the coverage is deteriorated, and the light emitting pixel is deteriorated to become a defect. It has been confirmed that moisture or the like that is a cause of deterioration is deteriorated by oxidizing the interface between the upper electrode and the photosensitive insulating material that is an organic substance. Since the upper electrode is formed on the entire surface, it is difficult to limit the area with an area mask or the like.

  A structure in which a photosensitive organic material layer and an inorganic material insulating layer are stacked as a planarization insulating layer is disclosed (for example, see Patent Document 1). In this structure, as shown in FIG. 9 and FIG. 10, since a laminated structure of the interelectrode insulating layer 141 and the upper electrode 134 exists between the lower electrodes 132, 132, defects are adjacent via the interelectrode insulating layer 141. It will be enlarged to the pixel. 9A is a plan layout view, FIG. 9B is an enlarged cross-sectional view showing a schematic configuration of the cross section along the line AA in the plan layout diagram, FIG. 10 is a plan layout diagram in FIG. 2) is an enlarged cross-sectional view showing a schematic configuration in a cross section taken along line BB in the plan layout diagram.

  For example, in the display device having the configuration shown in FIGS. 9 and 10, pixel defects increase as the environmental test time increases as shown in the relationship diagram between the number of defective pixels and the environmental test time in FIG. 11. I understand. This is because, as described above, since there is a laminated structure of the interelectrode insulating layer and the upper electrode across the lower electrodes, defects are expanded to adjacent pixels through the interelectrode insulating layer. Note that in FIG. 11, the inorganic material insulating layer of the planarization insulating layer is formed of a silicon oxide film having a thickness of 300 nm, the silicon oxide film having a thickness of 600 nm, and the conventional anode electrode structure is inorganic. The case where the anode electrode was formed on the photosensitive organic material layer without forming the material insulating layer was shown. Further, the size of the foreign matter that caused the film deterioration was 50 μm.

  In addition, by providing a groove in the interelectrode insulating layer between the electrodes, water, gas, or the like, which is considered as a cause of deterioration, is removed, and the structure in which the light emitting layer receives erosion from the lower layer (see, for example, Patent Document 2). Is disclosed. However, the configuration disclosed in Patent Document 2 is such that grooves are formed along the pixel columns. In this configuration, an inter-electrode insulating layer is provided between the electrodes in the direction in which the grooves are formed. Since they are in a connected state, defects are enlarged through the inter-electrode insulating layer in the direction in which the grooves are formed.

JP 2001-356711 A JP 2003-332069 A

  The problem to be solved is that a defect generated between the interelectrode insulating film formed between the electrodes and the upper electrode cannot be kept to a minimum, for example, one pixel. The above-described defects are caused by damage to the pixels when moisture, gas, or the like contained in the panel of the display device enters from a portion with poor coverage of the interelectrode insulating layer. It has been specified that the path of moisture or gas that is a cause of defects grows due to the oxidation of the interface between the photosensitive insulating material used in the interelectrode insulating layer and the upper electrode. On the other hand, it is very difficult to form the upper electrode by limiting the area with an area mask or the like.

  It is an object of the present invention to minimize defects generated between the interelectrode insulating film formed between the electrodes and the upper electrode, for example, to one pixel.

  In the display device of the present invention, an organic EL element having an organic layer between an upper electrode and a lower electrode is arranged for each pixel on an inorganic insulating film, and between the adjacent lower electrodes and between the lower electrode and the auxiliary electrode. In the display device having an inter-electrode insulating layer, the inter-electrode insulating layer is divided between the lower electrodes and between the lower electrode and the auxiliary electrode, and the inter-electrode insulating layer is divided. The inorganic insulating film and the upper electrode are connected to each other.

  In the display device of the present invention, the interelectrode insulating layer is divided between the lower electrode and between the lower electrode and the auxiliary electrode, and the inorganic insulating film and the upper electrode are separated in the region where the interelectrode insulating layer is divided. Therefore, there is no contact area between the lower electrode and between the lower electrode and the auxiliary electrode between the interelectrode insulating layer and the upper electrode. For this reason, the defect that has occurred between the upper electrode and the interelectrode insulating layer, which has been a problem in the past, can be generated only on one lower electrode or auxiliary electrode, and between the electrodes on adjacent lower electrodes. There is no progress between the insulating layer and the upper electrode or between the inter-electrode insulating layer on the adjacent auxiliary electrode and the upper electrode. Therefore, only a minimum area has a defect. For example, the defective area is limited to one pixel.

  In the method for manufacturing a display device according to the present invention, an organic EL element having an organic layer between an upper electrode and a lower electrode is arranged on an inorganic insulating film for each pixel, and between adjacent lower electrodes and between the lower electrode and an auxiliary electrode. In a manufacturing method of a display device including an interelectrode insulating layer between electrodes, a step of forming the interelectrode insulating layer so as to cover the lower electrode and the auxiliary electrode, and the lower portion of the interelectrode insulating layer And a step of separating between the electrodes and between the lower electrode and the auxiliary electrode.

  In the method for manufacturing a display device according to the present invention, the interelectrode insulating layer is formed so as to be divided between the lower electrodes and between the lower electrode and the auxiliary electrode. The insulating film and the upper electrode are formed so as to be connected. Accordingly, there is no contact area between the interelectrode insulating layer and the upper electrode between the lower electrodes and between the lower electrode and the auxiliary electrode. For this reason, the defect that has occurred between the upper electrode and the interelectrode insulating layer, which has been a problem in the past, can be generated only on one lower electrode or auxiliary electrode, and between the electrodes on adjacent lower electrodes. There is no progress between the insulating layer and the upper electrode or between the inter-electrode insulating layer on the adjacent auxiliary electrode and the upper electrode. Therefore, the display device is manufactured so that only a minimum area has a defect. For example, the defective area is limited to one pixel.

  In the display device of the present invention, the interelectrode insulating layer is divided between the lower electrode and between the lower electrode and the auxiliary electrode, and the inorganic insulating film and the upper electrode are separated in the region where the interelectrode insulating layer is divided. Are connected, so even if the defect in question occurs at the interface between the upper electrode and the interelectrode insulating layer, the auxiliary electrode between or between the interelectrode insulating layer and the upper electrode on the adjacent lower electrode Proceeding between the upper interelectrode insulating layer and the upper electrode can be prevented. In other words, since only a minimum area has a defect, for example, there is an advantage that the defective area can be limited to one pixel. Therefore, the yield can be improved.

  In the manufacturing method of the display device of the present invention, the interelectrode insulating layer is formed so that the lower electrode and the lower electrode and the auxiliary electrode are separated from each other. Since the insulating film and the upper electrode are connected to each other, even if a problem defect occurs at the interface between the upper electrode and the interelectrode insulating layer, the interelectrode insulating layer and the upper part on the adjacent lower electrode Since it is possible to prevent progress between the electrode or between the interelectrode insulating layer on the adjacent auxiliary electrode and the upper electrode, defects are generated only in a minimum region. That is, there is an advantage that the defective area can be limited to one pixel. Therefore, the yield can be improved.

  A first example of one embodiment of the display device according to the present invention is shown in the plan layout diagram shown in FIG. 1 and an enlarged sectional view showing a schematic configuration in the section AA in the plan layout diagram, and FIG. This will be described with reference to an enlarged cross-sectional view showing a schematic configuration in a cross section taken along line B-B in the plane layout diagram. Note that an enlarged cross-sectional view showing a schematic configuration is not made to coincide with the above-described plan layout diagram for easy understanding.

  As shown in FIGS. 1 to 2, a first element is mounted on a substrate (not shown) on which an element such as a TFT (Thin Film Transistor) that drives an organic electroluminescence element (hereinafter referred to as an organic EL element), wiring, and the like is mounted. An insulating layer 21 is formed. The first insulating layer 21 is made of, for example, a positive photosensitive insulating material having a thickness of about 2 μm, and is formed of a flattened insulating layer whose surface is flattened. As the positive photosensitive insulating material, for example, polybenzoxazole, positive photosensitive polyimide, or the like can be used. Therefore, the first insulating layer 21 flattens the unevenness of about 1.0 μm thickness due to elements, wirings, and the like.

  In the first insulating layer 21, a contact hole 22 for connecting a lower electrode, which will be described later, to the TFT is formed.

A second insulating layer 23 is formed on the first insulating layer 21. The second insulating layer 23 is formed of, for example, an inorganic insulating layer. For example, a silicon oxide (SiO _x ) film can be used for the inorganic insulating layer, but other inorganic insulating materials can also be used, and the silicon oxide film is formed to a thickness of about 300 nm, for example. About this film thickness, it can select suitably. The second insulating layer 23 is formed in the contact hole 22, but the contact hole 24 for connecting the lower electrode to the TFT is also formed in the second insulating layer 23 in the same manner as the contact hole 22. Is formed.

  A lower electrode 32 of the organic EL element 31 is formed on the second insulating layer 23 so as to be connected to the TFT through a contact hole 24. The lower electrode 32 is formed for each pixel and has, for example, a stacked structure of an adhesion layer, a conductive layer, and a barrier layer. For example, an ITO film having a thickness of 20 nm is formed as an adhesion layer for ensuring adhesion with the base layer, a silver film is formed in a thickness of 100 nm as a main body layer of the lower electrode 32, and an ITO film is formed as a barrier layer by 10 nm. The thickness is formed. The lower electrode 32 described above has a layer structure in which silver is sandwiched between ITO, but other than silver, a silver alloy containing silver as a main component can be used, and other than the ITO, a transparent conductive material can be used. A material mainly containing indium oxide such as indium zinc oxide (eg, IZO) may be used. The ITO of the adhesion layer is formed to a thickness of 5.0 nm to 100 nm that can be adhered, the ITO of the barrier layer is formed to a thickness of 3.0 nm to 50 nm, which is a processing limit, and the light of Ag is light. Is not permeated and may be in a thickness range of 50 nm to 500 nm which is a processing limit.

  An auxiliary electrode 35 is formed on the second insulating layer 23. The auxiliary electrode 35 can also have the same structure as the lower electrode 32.

  An interelectrode insulating layer 41 is formed so as to surround each of the lower electrode 32 and the auxiliary electrode 35. For example, a positive photosensitive insulating material is used for the interelectrode insulating layer 41. For example, positive-type photosensitive insulating materials include photosensitive polyimide and polybenzoxazole. The interelectrode insulating layer 41 is divided between the lower electrodes 32 and 32 and between the lower electrode 32 and the auxiliary electrode 35. Further, an opening 42 is formed in the interelectrode insulating layer 41 on the lower electrode 32. Therefore, the inter-electrode insulating layer 41 is formed for each pixel, and is formed on the side periphery and the side periphery of the lower electrode 32, and is formed so as to cover each auxiliary electrode 35.

  An organic layer 33 of the organic EL element 31 is formed on the lower electrode 32 in the opening 42. The organic layer 33 is formed, for example, by sequentially forming materials of a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. In the drawing, as an example, an organic EL element using the red organic layer 33 (33R), the green organic layer 33 (33G), and the blue organic layer 33 (33B) which are the three primary colors of light is shown. It is also possible to use colors other than the three primary colors of light.

  An upper electrode 34 is formed so as to cover the interelectrode insulating layer 41 and the organic layer 33. The upper electrode 34 can be formed of, for example, a magnesium silver alloy, and the film thickness thereof is, for example, 10 nm. Accordingly, since the upper electrode 34 is formed on the second insulating layer 23 in the region where the interelectrode insulating layer 41 is divided, the second insulating layer 23 and the upper electrode 34 made of an inorganic insulating layer are formed for each pixel. Are connected. The lower electrode 32 described above serves as an anode, and the upper electrode 34 serves as a cathode.

Although not shown, a protective film having light transmittance is formed on the upper electrode 34. This protective film is made of a light-transmitting insulating film, for example, a silicon nitride (SiN _x ) film. This silicon nitride film is formed to a thickness of 3 μm, for example.

  In the display device 11 of the present invention, the interelectrode insulating layer 41 is a region where the lower electrodes 32 and 32 and between the lower electrode 32 and the auxiliary electrode 35 are divided and the interelectrode insulating layer 41 is divided. Since the second insulating layer 23 made of an inorganic insulating film and the upper electrode 34 are connected to each other, the inter-electrode insulating layer 41 and the inter-electrode insulating layer 41 are provided between the lower electrodes 32 and 32 and between the lower electrode 32 and the auxiliary electrode 35. There is no contact area with the upper electrode 34. For this reason, the defect that has occurred between the upper electrode 34 and the interelectrode insulating layer 41, which has been a problem in the past, is suppressed at the connection surface between the interelectrode insulating layer 41 and the upper electrode 34. It only needs to be generated on the lower electrode 32 or the auxiliary electrode 35. Between the interelectrode insulating layer 41 and the upper electrode 34 on the adjacent lower electrode 35, or between the interelectrode insulating layer 41 and the upper electrode on the adjacent auxiliary electrode 35. No progress is made to 34. Accordingly, since only a minimum area has a defect, for example, there is an advantage that the defective area can be limited to one pixel. Therefore, the yield can be improved.

  Next, a second example of one embodiment of the display device according to the present invention, a plan layout diagram shown in FIG. 3 and an enlarged sectional view showing a schematic configuration in the section AA in the plan layout diagram, and FIG. 4 will be described with reference to an enlarged cross-sectional view showing a schematic configuration in a cross section taken along line BB in the plane layout diagram shown in FIG. Note that an enlarged cross-sectional view showing a schematic configuration is not made to coincide with the above-described plan layout diagram for easy understanding.

  As shown in FIGS. 3 and 4, the display device 12 is a so-called bottom emission type organic EL display device. Details will be described below.

  A first insulating layer 21 is formed on a substrate 11 on which an element such as a TFT (Thin Film Transistor) for driving an organic electroluminescence element (hereinafter referred to as an organic EL element), wiring, and the like are mounted. The first insulating layer 21 is formed of a so-called transparent flattening insulating layer having a light-transmitting property with a flattened surface.

  In the first insulating layer 21, a contact hole 22 for connecting a lower electrode, which will be described later, to the TFT is formed.

A second insulating layer 23 is formed on the first insulating layer 21. The second insulating layer 23 is formed of a so-called transparent inorganic insulating layer having optical transparency. For example, a silicon oxide (SiO _x ) film can be used for the inorganic insulating layer, but other inorganic insulating materials can also be used. The second insulating layer 23 is formed in the contact hole 22, but the contact hole 24 for connecting the lower electrode to the TFT is also formed in the second insulating layer 23 in the same manner as the contact hole 22. Is formed.

  A lower electrode 32 of the organic EL element 31 is formed on the second insulating layer 23 so as to be connected to the TFT through a contact hole 24. The lower electrode 32 is formed of a transparent electrode material for each pixel. An auxiliary electrode 35 is formed on the second insulating layer 23. This auxiliary electrode 35 can also be formed of the same material as the lower electrode 32 at the same time.

  An interelectrode insulating layer 41 is formed so as to surround each of the lower electrode 32 and the auxiliary electrode 35. For example, a positive photosensitive insulating material is used for the interelectrode insulating layer 41. For example, positive-type photosensitive insulating materials include photosensitive polyimide and polybenzoxazole. The interelectrode insulating layer 41 is divided between the lower electrodes 32 and 32 and between the lower electrode 32 and the auxiliary electrode 35. Further, an opening 42 is formed in the interelectrode insulating layer 41 on the lower electrode 32. Therefore, the inter-electrode insulating layer 41 is formed for each pixel, and is formed on the side periphery and the side periphery of the lower electrode 32, and is formed so as to cover each auxiliary electrode 35.

  An organic layer 33 of the organic EL element 31 is formed on the lower electrode 32 in the opening 42. The organic layer 33 is formed, for example, by sequentially forming materials of a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. In the drawing, as an example, an organic EL element using the red organic layer 33 (33R), the green organic layer 33 (33G), and the blue organic layer 33 (33B) which are the three primary colors of light is shown. It is also possible to use colors other than the three primary colors of light.

  An upper electrode 34 is formed so as to cover the interelectrode insulating layer 41 and the organic layer 33. Accordingly, since the upper electrode 34 is formed on the second insulating layer 23 in the region where the interelectrode insulating layer 41 is divided, the second insulating layer 23 and the upper electrode 34 made of an inorganic insulating layer are formed for each pixel. Are connected. The lower electrode 32 described above serves as an anode, and the upper electrode 34 serves as a cathode.

  Although not shown, a protective film is formed on the upper electrode 34.

  In the display device 12 of the present invention, the interelectrode insulating layer 41 is a region where the lower electrodes 32 and 32 and between the lower electrode 32 and the auxiliary electrode 35 are separated and the interelectrode insulating layer 41 is divided. Since the second insulating layer 23 made of an inorganic insulating film and the upper electrode 34 are connected to each other, between the lower electrodes 32 and 32 and between the lower electrode 32 and the auxiliary electrode 35, the interelectrode insulating layer 41 and There is no contact area with the upper electrode 34. For this reason, the defect that has occurred between the upper electrode 34 and the interelectrode insulating layer 41, which has been a problem in the past, is suppressed at the connection surface between the interelectrode insulating layer 41 and the upper electrode 34. It only needs to be generated on the lower electrode 32 or the auxiliary electrode 35. Between the interelectrode insulating layer 41 and the upper electrode 34 on the adjacent lower electrode 35, or between the interelectrode insulating layer 41 and the upper electrode on the adjacent auxiliary electrode 35. No progress is made to 34. Accordingly, since only a minimum area has a defect, for example, there is an advantage that the defective area can be limited to one pixel. Therefore, the yield can be improved.

  Next, an example of an embodiment according to a method for manufacturing a display device of the present invention will be described with reference to manufacturing process cross-sectional views shown in FIGS. This manufacturing process is a manufacturing process of the display device 11 having the top emission type organic EL element described with reference to FIGS.

  As shown in FIG. 5A, a first insulating layer 21 is formed on a substrate (not shown) on which elements such as TFTs (Thin Film Transistors) for driving organic EL elements, wirings, and the like are mounted. For example, a positive photosensitive insulating material is applied onto the substrate 11 by spin coating, and exposure is performed with an exposure apparatus, for example, development is performed with a paddle type developing apparatus, and the first insulating layer 21 is formed on the TFT. A contact hole 22 is formed. Thereafter, baking for curing the first insulating layer 21 is performed, for example, in a clean baking furnace. Thereby, the first insulating layer 21 is formed to have a thickness of about 2 μm, for example, and the surface is flattened. Therefore, the first insulating layer 21 flattens the unevenness of about 1.0 μm thickness due to elements, wirings, and the like. As the positive photosensitive insulating material, for example, polybenzoxazole, positive photosensitive polyimide, or the like can be used.

A second insulating layer 23 is formed on the first insulating layer 21. The second insulating layer 23 is formed of an inorganic insulating material by, for example, a CVD method. For example, silicon oxide (SiO _x ) can be used as the inorganic insulating material, but other inorganic insulating materials can also be used. In the case of the silicon oxide film, the silicon oxide film is formed to a thickness of about 300 nm, for example. About this film thickness, it can select suitably.

  Thereafter, patterning and etching are performed using a normal lithography technique to obtain a predetermined contact hole 22. Further, in order to completely cover the first insulating layer 21 with the second insulating layer 23, the contact hole 24 formed in the second insulating layer 23 is formed smaller than the contact hole 22 formed in the first insulating layer 21. Therefore, a contact hole 24 for electrically connecting the TFT (not shown) and the organic EL element described below is formed in the first insulating layer 21 and the second insulating layer 23.

  Next, as shown in FIG. 5B, the lower electrode 32 of the organic EL element is formed on the second insulating layer 23 so as to be connected to the TFT through the contact hole 24.

  First, an ITO film serving as an adhesion layer is formed on the second insulating layer 23 by a DC sputtering method, for example, to a thickness of 20 nm, for example. Subsequently, for example, a silver layer to be a main layer of the lower electrode is formed on the adhesion layer by a DC sputtering method to a thickness of 100 nm. Subsequently, an ITO film serving as a barrier layer is formed to a thickness of, for example, 10 nm on the main body layer by, for example, DC sputtering. Next, after forming a mask (not shown) in a predetermined shape using a normal lithography technique, etching is performed to form a lower electrode 32 and an auxiliary electrode 35 having a predetermined shape. Thereafter, the mask is removed.

  The lower electrode 32 thus formed is formed for each pixel. The lower electrode 32 described above has a layer structure in which silver is sandwiched between ITO, but other than silver, a silver alloy containing silver as a main component can be used, and other than the ITO, a transparent conductive material can be used. A material mainly containing indium oxide such as indium zinc oxide (eg, IZO) may be used. The ITO of the adhesion layer is formed to a thickness of 5.0 nm to 100 nm that can be adhered, the ITO of the barrier layer is formed to a thickness of 3.0 nm to 50 nm, which is a processing limit, and the light of Ag is light. Is not permeated and may be in a thickness range of 50 nm to 500 nm which is a processing limit.

  An auxiliary electrode 35 having the same film structure as that of the lower electrode 32 is formed on the second insulating layer 23 simultaneously with the lower electrode 32. That is, the lower electrode 32 and the auxiliary electrode 35 are formed together.

  Next, as shown in FIG. 6 (3), an interelectrode insulating layer 41 is formed so as to cover the lower electrode 32 and the auxiliary electrode 35. For example, a positive photosensitive insulating material is used for the interelectrode insulating layer 41. For example, positive-type photosensitive insulating materials include photosensitive polyimide and polybenzoxazole. Examples of the positive photosensitive insulating material include polybenzoxazole and positive photosensitive polyimide. Then, for example, by a spin coating method, a positive photosensitive insulating material is applied on the second insulating layer 23 so as to cover the lower electrode 32 and the auxiliary electrode 35, and exposure is performed by an exposure apparatus. Development is performed with a developing device. Next, main baking (baking) for curing the interelectrode insulating layer 41 is performed using, for example, a clean baking furnace. This baking is preferably performed in an inert atmosphere such as a nitrogen atmosphere or a rare gas atmosphere. By this baking, the interelectrode insulating layer 41 is formed to a thickness of, for example, 2.0 μm. Then, an interelectrode insulating layer 41 is formed so as to surround each of the lower electrode 32 and the auxiliary electrode 35, and at the same time, an opening 42 is formed in the interelectrode insulating layer 41 on the lower electrode 32.

  As a result, the interelectrode insulating layer 41 is divided between the lower electrodes 32 and 32 and between the lower electrode 32 and the auxiliary electrode 35. Further, as described above, the opening 42 is formed in the interelectrode insulating layer 41 on the lower electrode 32. Therefore, the interelectrode insulating layer 41 is formed in an isolated state for each pixel, and is formed on the side periphery and the side periphery of the lower electrode 32, and is formed so as to cover each auxiliary electrode 35. .

  Next, as shown in FIG. 7 (4), after performing the substrate pretreatment, the organic layer 33 of the organic EL element is formed on the lower electrode 32 in the opening 42. The organic layer 33 is formed, for example, by sequentially depositing materials of a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. In the drawing, as an example, an organic EL element using a blue organic layer 33 (33B) that is the three primary colors of light is shown, but a red organic layer (not shown) and a green organic layer (not shown). Is also formed in the predetermined opening 42 by the vapor deposition method in the same manner as the blue organic layer 33B. An organic layer having a color other than the three primary colors of light can also be used. Further, the substrate pretreatment is, for example, by oxygen plasma treatment. In addition, it is preferable to sequentially deposit the organic layers of the respective colors while maintaining a vacuum atmosphere. For example, each color organic layer is vapor-deposited by transporting between a plurality of vapor deposition chambers while maintaining a vacuum atmosphere.

  Next, as shown in FIG. 8 (5), the upper electrode 34 is formed so as to cover the interelectrode insulating layer 41 and the organic layer 33. The upper electrode 34 can be formed of, for example, a magnesium silver alloy, and the film thickness thereof is, for example, 10 nm. Accordingly, since the upper electrode 34 is formed on the second insulating layer 23 in the region where the interelectrode insulating layer 41 is divided, the second insulating layer 23 made of an inorganic insulating layer and the upper electrode 34 for each pixel are Connected. For the formation of the upper electrode 34, a vacuum vapor deposition method is used, and it is preferable that the upper electrode 34 is formed in a state where the vacuum state is continuously maintained from the organic layer vapor deposition. The lower electrode 32 described above serves as an anode, and the upper electrode 34 serves as a cathode.

Thereafter, although not shown, a protective film having light transmittance is formed on the upper electrode 34. This protective film is formed of, for example, a silicon nitride (SiN _x ) film. This silicon nitride film is formed to a thickness of 3 μm, for example.

  In the manufacturing method of the display device of the present invention, the interelectrode insulating layer 41 is formed so as to be divided between the lower electrodes 32 and 32 and between the lower electrode 32 and the auxiliary electrode 35. In the region where is divided, the second insulating layer 22 made of an inorganic insulating film is connected to the upper electrode 34. Therefore, no contact region between the interelectrode insulating layer 41 and the upper electrode 34 exists between the lower electrodes 32 and 32 and between the lower electrode 32 and the auxiliary electrode 35. For this reason, since the defect which has occurred between the upper electrode and the interelectrode insulating layer, which has been a problem in the past, is suppressed at the connection surface between the interelectrode insulating layer 41 and the upper electrode 34, one lower electrode 32, or only on the auxiliary electrode 35, and between the interelectrode insulating layer 41 and the upper electrode 34 on the adjacent lower electrode 32 or between the interelectrode insulating layer 41 and the upper electrode 34 on the adjacent auxiliary electrode 35. There is no progress in between. Therefore, since the display device 11 is manufactured so that only a minimum region has a defect, for example, there is an advantage that the defective region can be limited to one pixel. Therefore, the yield can be improved.

  Although the above manufacturing method has been described for a display device using a top emission type organic EL element, a display device using a bottom emission type organic EL element can also be manufactured. In this case, a transparent material may be used for the base of the organic EL layer.

  Further, in the manufacturing method, the step of dividing the interelectrode insulating layer 41 between the lower electrodes 32 and 32 and between the lower electrode 32 and the auxiliary electrode 35 is performed by opening the opening 42 in the interelectrode insulating film 41. Since it can be performed in the same process as the process of forming, there is no increase in the number of processes. For this reason, there is an advantage that there is no process addition.

1 is a plan layout diagram illustrating a first example of an embodiment of a display device according to the present invention, and an enlarged sectional view illustrating a schematic configuration in a section taken along line AA in the plan layout diagram. It is an expanded sectional view showing a schematic structure in a BB line section in a plane layout figure showing a 1st example of one embodiment concerning a display of the present invention. It is the expanded layout drawing which shows the schematic structure in the AA line cross section in the plane layout figure which showed the 2nd example of one Embodiment which concerns on the display apparatus of this invention, and a plane layout figure. It is an expanded sectional view which shows schematic structure in the BB sectional view in the plane layout figure which showed the 2nd example of one Embodiment which concerns on the display apparatus of this invention. It is manufacturing process sectional drawing which showed an example of one Embodiment which concerns on the manufacturing method of the display apparatus of this invention. It is manufacturing process sectional drawing which showed an example of one Embodiment which concerns on the manufacturing method of the display apparatus of this invention. It is manufacturing process sectional drawing which showed an example of one Embodiment which concerns on the manufacturing method of the display apparatus of this invention. It is manufacturing process sectional drawing which showed an example of one Embodiment which concerns on the manufacturing method of the display apparatus of this invention. FIG. 1A is a plan layout diagram showing a display device of the prior art, and FIG. 2B is an enlarged cross-sectional diagram showing a schematic configuration in a section taken along line AA in the plan layout diagram. FIG. 1A is a plan layout view showing a display device of the prior art, and FIG. 2B is an enlarged cross-sectional view showing a schematic configuration in a cross section taken along line BB in the plan layout diagram. It is a relationship diagram between the number of defective pixels and the environmental test time.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Display apparatus, 23 ... 2nd insulating layer (inorganic insulating film), 31 ... Organic EL element, 32 ... Lower electrode, 33 ... Organic layer, 34 ... Upper electrode, 35 ... Auxiliary electrode, 41 ... Interelectrode insulating layer

Claims (5)

An organic EL element having an organic layer between the upper electrode and the lower electrode on the inorganic insulating film is arranged for each pixel,
In a display device comprising an interelectrode insulating layer between the adjacent lower electrodes and between the lower electrode and the auxiliary electrode,
The interelectrode insulating layer is divided between the lower electrodes and between the lower electrode and the auxiliary electrode,
The display device, wherein the inorganic insulating film and the upper electrode are connected in a region where the interelectrode insulating layer is divided. The display device according to claim 1, wherein the interelectrode insulating layer has an opening formed on the lower electrode and covers the periphery of the lower electrode. An organic EL element having an organic layer between an upper electrode and a lower electrode on an inorganic insulating film is arranged for each pixel,
In the manufacturing method of a display device including an inter-electrode insulating layer between the adjacent lower electrodes and between the lower electrode and the auxiliary electrode,
Forming the interelectrode insulating layer so as to cover the lower electrode and the auxiliary electrode;
And a step of dividing between the lower electrodes of the inter-electrode insulating layer and between the lower electrode and the auxiliary electrode. The method for manufacturing a display device according to claim 3, wherein the inorganic insulating film is exposed in a dividing region of the interelectrode insulating layer in the step of dividing the interelectrode insulating layer. The method for manufacturing a display device according to claim 3, wherein the step of dividing the interelectrode insulating layer is the same as the step of forming an opening in the interelectrode insulating layer on the lower electrode.

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