JP2006286825A5 - - Google Patents

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Publication number
JP2006286825A5
JP2006286825A5 JP2005103127A JP2005103127A JP2006286825A5 JP 2006286825 A5 JP2006286825 A5 JP 2006286825A5 JP 2005103127 A JP2005103127 A JP 2005103127A JP 2005103127 A JP2005103127 A JP 2005103127A JP 2006286825 A5 JP2006286825 A5 JP 2006286825A5
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Japan
Prior art keywords
receiving layer
light receiving
layer
photoelectric conversion
conversion device
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Pending
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JP2005103127A
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Japanese (ja)
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JP2006286825A (en
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Priority to JP2005103127A priority Critical patent/JP2006286825A/en
Priority claimed from JP2005103127A external-priority patent/JP2006286825A/en
Publication of JP2006286825A publication Critical patent/JP2006286825A/en
Publication of JP2006286825A5 publication Critical patent/JP2006286825A5/ja
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Claims (7)

光エネルギーを電気エネルギーに変換する光電変換装置であって、
III−Ｖ族化合物半導体の受光層と、
電位差を持つとともに受光層の表面に電気的に接している一対の電極と、
受光層よりも入射面側に設けられているとともに受光層のバンドギャップよりも広いバンドギャップを有するIII−Ｖ族化合物半導体のフィルタ層と、
受光層とフィルタ層の間に形成されており、受光層とフィルタ層よりもバンドギャップが広いバリア層と、を備え、
受光層は、可視光の光エネルギーを吸収するようにバンドギャップの幅が調整されており、
フィルタ層は、受光層が吸収する可視光よりも波長の短い可視光を吸収するようにバンドギャップの幅が調整されている光電変換装置。 A photoelectric conversion device that converts light energy into electrical energy,
A light-receiving layer of a III-V compound semiconductor;
A pair of electrodes having a potential difference and being in electrical contact with the surface of the light receiving layer;
A III-V group compound semiconductor filter layer provided on the incident surface side of the light receiving layer and having a wider band gap than the band gap of the light receiving layer ;
A barrier layer formed between the light receiving layer and the filter layer, and having a wider band gap than the light receiving layer and the filter layer ;
The band width of the light receiving layer is adjusted to absorb visible light energy,
The photoelectric conversion device in which the band gap is adjusted so that the filter layer absorbs visible light having a shorter wavelength than the visible light absorbed by the light receiving layer. 前記フィルタ層、前記バリア層、前記受光層は、入射光の進行方向に沿ってこの順で配置されていることを特徴とする請求項１に記載の光電変換装置。The photoelectric conversion device according to claim 1, wherein the filter layer, the barrier layer, and the light receiving layer are arranged in this order along a traveling direction of incident light. フィルタ層は、受光層の表面のうち一対の電極の間に形成されていることを特徴とする請求項１の光電変換装置。 The photoelectric conversion device according to claim 1 , wherein the filter layer is formed between the pair of electrodes on the surface of the light receiving layer. III−Ｖ族化合物半導体が、Al  III-V compound semiconductor is Al XX GaGa YY InIn 1-X-Y1-X-Y N（ただし、０≦X≦１、０≦Y≦１、０≦1−X−Y≦１）であることを特徴とする請求項１〜３のいずれかの光電変換装置。The photoelectric conversion device according to claim 1, wherein N (where 0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ 1-X−Y ≦ 1). 電位差を持つ一対の電極が、フィルタ層の表面に電気的に接していることを特徴とする請求項１〜４のいずれかの光電変換装置。  The photoelectric conversion device according to claim 1, wherein a pair of electrodes having a potential difference is in electrical contact with the surface of the filter layer. 光エネルギーを電気エネルギーに変換するとともに、回路基板に実装される光電変換装置であって、  A photoelectric conversion device that converts light energy into electrical energy and is mounted on a circuit board,
光電変換装置は、一対の電極と、可視光を透過する基板と、基板上に設けられている半導体積層を有し、その半導体積層は、  The photoelectric conversion device includes a pair of electrodes, a substrate that transmits visible light, and a semiconductor stack provided over the substrate.
III−Ｖ族化合物半導体の受光層と、  A light-receiving layer of a III-V compound semiconductor;
受光層よりも基板側に設けられているとともに受光層のバンドギャップよりも広いバンドギャップを有するIII−Ｖ族化合物半導体のフィルタ層を備え、  A III-V group compound semiconductor filter layer provided on the substrate side of the light receiving layer and having a wider band gap than the band gap of the light receiving layer;
前記受光層は、可視光の光エネルギーを吸収するようにバンドギャップの幅が調整されており、  The light receiving layer has a band gap width adjusted to absorb visible light energy,
前記フィルタ層は、前記受光層が吸収する可視光よりも波長の短い可視光を吸収するようにバンドギャップの幅が調整されており、  The filter layer has a band gap width adjusted to absorb visible light having a shorter wavelength than visible light absorbed by the light receiving layer,
前記一対の電極は、電位差を持つとともに前記受光層の表面に電気的に接しており、  The pair of electrodes have a potential difference and are in electrical contact with the surface of the light receiving layer,
前記一対の電極が前記回路基板の導体パターンに直接接合して前記回路基板に実装される光電変換装置。  A photoelectric conversion device in which the pair of electrodes are directly bonded to a conductor pattern of the circuit board and mounted on the circuit board. 受光層とフィルタ層の間に形成されており、受光層とフィルタ層よりもバンドギャップが広いバリア層をさらに備えていることを特徴とする請求項６に記載の光電変換装置。The photoelectric conversion device according to claim 6, further comprising a barrier layer formed between the light receiving layer and the filter layer and having a wider band gap than the light receiving layer and the filter layer.
JP2005103127A 2005-03-31 2005-03-31 Photoelectric converter Pending JP2006286825A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005103127A JP2006286825A (en) 2005-03-31 2005-03-31 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005103127A JP2006286825A (en) 2005-03-31 2005-03-31 Photoelectric converter

Publications (2)

Publication Number Publication Date
JP2006286825A JP2006286825A (en) 2006-10-19
JP2006286825A5 true JP2006286825A5 (en) 2008-05-08

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JP2005103127A Pending JP2006286825A (en) 2005-03-31 2005-03-31 Photoelectric converter

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6146559B2 (en) * 2013-03-28 2017-06-14 セイコーエプソン株式会社 Photoelectric conversion element and solar cell
JP6179708B2 (en) * 2013-03-28 2017-08-16 セイコーエプソン株式会社 Photoelectric conversion element and solar cell
JP7314639B2 (en) * 2019-06-17 2023-07-26 富士通株式会社 Infrared detector and imaging device using the same

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