JP2006286308A - Transparent conductive film laminate, and its manufacturing method - Google Patents

Transparent conductive film laminate, and its manufacturing method Download PDF

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JP2006286308A
JP2006286308A JP2005102657A JP2005102657A JP2006286308A JP 2006286308 A JP2006286308 A JP 2006286308A JP 2005102657 A JP2005102657 A JP 2005102657A JP 2005102657 A JP2005102657 A JP 2005102657A JP 2006286308 A JP2006286308 A JP 2006286308A
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transparent conductive
conductive film
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JP4882262B2 (en
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Junko Anami
潤子 阿波
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Toppan Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a transparent conductive film laminate and its manufacturing method wherein curling and deformation prevention of a base material, and peeling-off prevention and attainment of low resistance of the transparent conductive film are enabled. <P>SOLUTION: The transparent conductive film is formed on at least one face of the base material, the transparent conductive film has a laminated constitution of at least one layer or more, the transparent conductive film is applied of an annealing treatment by ultraviolet irradiation to every layer, and the transparent conductive film is made to be the transparent conductive film laminate in which X-ray diffraction peaks caused by a crystal in which amorphous state is not mixedly existing are observed at all parts of the inside of the film. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、ＬＣＤやＥＬ等の表示素子の電極基板として幅広い用途が期待される透明導電膜積層体に関するものである。 The present invention relates to a transparent conductive film laminate which is expected to be widely used as an electrode substrate for display elements such as LCDs and ELs.

近年透明導電膜は、光学表示素子、太陽電池、光デバイス等、様々な分野で用いられており、その需要量は年々増加傾向にある。また、要求性能も年々高くなっており、現状性能よりもさらなる高透過率・低抵抗が要求されている。低抵抗化を目指し透明導電膜を結晶化させる目的で高温成膜を行うと、一般的に透明導電膜の内部応力が大きくなることから密着力の低下を引き起こし、膜が剥離する現象が観察されることがある。特に、基材としてフィルムを用いた積層体を作製する場合にはカールの発生が見られ、また、フィルム基材の耐熱性を越える熱を加えた場合にフィルム基材の変形等の問題が生じる。透明導電膜を非晶質状態で成膜し、後工程において熱アニール処理により結晶化することで低抵抗化する手段も取られている（特開２０００−２８２２２５号公報、特開２００３−１６８５８号公報等）。ところが、基材としてフィルムを選択し、そのフィルム基材の耐熱温度が透明導電膜の結晶化温度以下の場合、透明導電膜内を均一かつ十分に結晶化することが難しいことから、透明導電膜を十分に低抵抗化することができない。また、レーザー光によるアニール処理に関しても報告されているが、フィルム基材を用いた場合にレーザー光が発する熱により基材が劣化してしまうために、透明導電膜の結晶化に十分な照射を行うことができない。そこで、紫外線照射、特にエキシマランプを用いた透明導電膜の低抵抗化手法（特開２００３−１６８５７号公報）を用いれば、フィルム基材にかかる熱負荷をできる限り抑えて透明導電膜全体を均一かつ効率的に結晶化させることができる。ところが、透明導電膜の厚みが増すにつれ、透明導電膜全体が結晶化した際に大きな内部応力が生じ、膜剥離の原因となってしまう。膜剥離が生じなかったとしても、フィルム基材を用いた場合にはカールの発生を無視できない。
特開２０００−２８２２２５号公報 特開２００３−１６８５８号公報 特開２００３−１６８５７号公報 In recent years, transparent conductive films have been used in various fields such as optical display elements, solar cells, and optical devices, and the demand thereof has been increasing year by year. In addition, the required performance is increasing year by year, and higher transmittance and lower resistance are required than the current performance. When high-temperature film formation is performed for the purpose of crystallizing the transparent conductive film with the aim of reducing resistance, the internal stress of the transparent conductive film generally increases, causing a decrease in adhesion and a phenomenon of film peeling is observed. Sometimes. In particular, when a laminate using a film as a substrate is produced, the occurrence of curling is observed, and when heat exceeding the heat resistance of the film substrate is applied, problems such as deformation of the film substrate occur. . Means for reducing the resistance by forming a transparent conductive film in an amorphous state and crystallizing it by a thermal annealing process in a subsequent process has been taken (Japanese Patent Laid-Open Nos. 2000-282225 and 2003-16858). Gazette). However, when a film is selected as the substrate and the heat resistant temperature of the film substrate is equal to or lower than the crystallization temperature of the transparent conductive film, it is difficult to uniformly and sufficiently crystallize the transparent conductive film. Cannot be sufficiently reduced in resistance. In addition, although annealing treatment using laser light has also been reported, when a film base material is used, the base material deteriorates due to the heat generated by the laser light, so that sufficient irradiation for crystallization of the transparent conductive film is performed. I can't do it. Therefore, by using a method for reducing the resistance of a transparent conductive film using ultraviolet irradiation, particularly an excimer lamp (Japanese Patent Laid-Open No. 2003-16857), the entire transparent conductive film is uniformly suppressed while minimizing the heat load on the film substrate. And it can crystallize efficiently. However, as the thickness of the transparent conductive film increases, a large internal stress is generated when the entire transparent conductive film is crystallized, causing film peeling. Even if film peeling does not occur, the occurrence of curling cannot be ignored when a film substrate is used.
JP 2000-282225 A Japanese Patent Laid-Open No. 2003-16858 JP 2003-16857 A

本発明の課題は、基材のカールおよび変形防止、透明導電性膜の剥離防止および低抵抗化を可能にした透明導電膜積層体およびその製造方法を提供することにある。 An object of the present invention is to provide a transparent conductive film laminate that can prevent curling and deformation of a substrate, prevent peeling of a transparent conductive film, and reduce resistance, and a method for manufacturing the same.

本発明は、基材の少なくとも片面に透明導電膜が形成されており、該透明導電膜は少なくとも２層以上の積層構成であり、該透明導電膜は１層ごとに紫外線照射アニールによる結晶化処理がなされており、該透明導電膜は膜内部のどの部分においてもアモルファスの混在しない結晶に起因するＸ線回折ピークが観察されることを特徴とする透明導電膜積層体である。 In the present invention, a transparent conductive film is formed on at least one surface of a substrate, and the transparent conductive film has a laminated structure of at least two layers. The transparent conductive film is crystallized by ultraviolet irradiation annealing for each layer. The transparent conductive film is a transparent conductive film laminate in which an X-ray diffraction peak due to a crystal in which amorphous is not mixed is observed in any part inside the film.

ここで、前記透明導電膜の内部応力は６００ＭＰａ以下である。 Here, the internal stress of the transparent conductive film is 600 MPa or less.

また、前記透明導電膜の比抵抗値が４．０×１０Ｅ−４Ω・ｃｍ以下である。 The specific resistance value of the transparent conductive film is 4.0 × 10E−4 Ω · cm or less.

また、前記透明導電膜積層体は、全光線透過率が８０％以上の透明導電膜積層体である。 Moreover, the said transparent conductive film laminated body is a transparent conductive film laminated body with a total light transmittance of 80% or more.

このような構成とすることで、透明導電膜積層体の基材のカールおよび変形防止、透明導電膜の剥離防止および低抵抗化ができる。 By setting it as such a structure, the curling and deformation | transformation prevention of a base material of a transparent conductive film laminated body, peeling prevention of a transparent conductive film, and low resistance can be performed.

本発明の透明導電膜積層体およびその製造方法により、基材のカールおよび変形防止、それに伴う透明導電膜のクラック発生の防止、透明導電膜の基材からの剥離防止および低抵抗化を可能にした透明導電膜積層体を製造することが可能となる。 The transparent conductive film laminate of the present invention and the manufacturing method thereof can prevent the curling and deformation of the base material, prevent the occurrence of cracks in the transparent conductive film, and prevent the peeling of the transparent conductive film from the base material and reduce the resistance. It becomes possible to manufacture the transparent conductive film laminated body.

また、本発明における真空成膜装置は、成膜室と紫外線照射アニール室を同一装置内に備えたインライン式の成膜・アニール装置である。通常、透明導電膜のキャリア密度の減少を抑える目的で真空中あるいは還元ガス中で紫外線によるアニール処理を行うが、紫外線照射によるアニール工程を成膜装置内で行うようにすれば真空排気系を共有することができる。また、１回の真空排気により透明導電膜の成膜及び紫外線によるアニール処理を行うことができ、装置の簡略化によるインフラコストの低下、及び生産効率の向上が可能となる。 The vacuum film forming apparatus according to the present invention is an in-line film forming / annealing apparatus provided with a film forming chamber and an ultraviolet irradiation annealing chamber in the same apparatus. Usually, annealing is performed with ultraviolet rays in a vacuum or reducing gas to suppress the decrease in carrier density of the transparent conductive film. However, if the annealing process by ultraviolet irradiation is performed in the film forming apparatus, the vacuum exhaust system is shared. can do. In addition, a transparent conductive film can be formed and an annealing process using ultraviolet rays can be performed by evacuation once, and the infrastructure cost can be reduced and the production efficiency can be improved by simplifying the apparatus.

また、本発明は、目標の膜厚にする過程において成膜とアニール処理を繰り返して透明導電膜を多層化することで、耐熱性に劣る基材上においても透明導電膜の均一な結晶化が容易となる。さらに、透明導電膜を多層化することで、透明導電膜の内部応力を低減することができる。 In addition, the present invention repeats film formation and annealing treatment in the process of setting the target film thickness to make the transparent conductive film multilayer, so that the transparent conductive film can be uniformly crystallized even on a substrate having poor heat resistance. It becomes easy. Furthermore, the internal stress of a transparent conductive film can be reduced by multilayering a transparent conductive film.

本発明について、その実施形態の一例を図１および図２に基づいて説明するが、これに限定されるものではない。 An example of the embodiment of the present invention will be described with reference to FIGS. 1 and 2, but the present invention is not limited to this.

まず、基材１を装着した搬送トレイ１１を、搬送トレイへの基材装着室５へセットし、真空引きを行う。次に、搬送トレイ１１で成膜室６まで基材１を搬送し、成膜源９を設置した成膜室６において、基材１に透明導電膜２を成膜する（図１（ａ）および図２）。 First, the transport tray 11 on which the substrate 1 is mounted is set in the substrate mounting chamber 5 on the transport tray, and vacuuming is performed. Next, the base material 1 is transported to the film forming chamber 6 by the transfer tray 11, and the transparent conductive film 2 is formed on the base material 1 in the film forming chamber 6 in which the film forming source 9 is installed (FIG. 1A). And FIG. 2).

基材１としてフィルムを用いる場合、どの様な用途に用いるかによって使い分けられるが、一般的にポリエチレンテレフタレート（ＰＥＴ）、ポリエチレンナフタレート（ＰＥＮ）、ポリアミド（ＰＡ）、ポリカーボネート（ＰＣ）、ポリエーテルサルフォン（ＰＥＳ）等を用いることができる。 When a film is used as the substrate 1, it can be properly used depending on the application, but in general, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyamide (PA), polycarbonate (PC), polyether sal A phone (PES) or the like can be used.

透明導電膜２の材料としては、インジウム、亜鉛、錫のいずれかの酸化物を用いる事ができる。 As a material of the transparent conductive film 2, any one of indium, zinc and tin oxide can be used.

透明導電膜２の成膜方法としては、真空蒸着法、スパッタリング法、ＣＶＤ法、イオンプレーティング法を用いることができるが、これに限るものではない。 As a method for forming the transparent conductive film 2, a vacuum vapor deposition method, a sputtering method, a CVD method, and an ion plating method can be used, but the method is not limited thereto.

次に、搬送トレイ１１を紫外線照射装置１０が設置されたアニール室７に移動し、透明導電膜２に紫外線を照射して透明導電膜結晶化層２０を形成する（図１（ｂ）および図２）。 Next, the transfer tray 11 is moved to the annealing chamber 7 in which the ultraviolet irradiation device 10 is installed, and the transparent conductive film 2 is irradiated with ultraviolet rays to form the transparent conductive film crystallization layer 20 (FIG. 1B and FIG. 2).

紫外線照射法としては、エキシマランプを用いた照射が好ましいが、これに限るものではない。紫外線を照射する際、熱アニールを併用することでより短時間での結晶化が可能となる。 The ultraviolet irradiation method is preferably irradiation using an excimer lamp, but is not limited thereto. When ultraviolet rays are irradiated, crystallization can be performed in a shorter time by using thermal annealing in combination.

分割成膜する場合は、上記の透明導電膜成膜工程および透明導電膜結晶化工程を必要回数繰り返す（図１（ａ）から（ｆ））。 In the case of divided film formation, the transparent conductive film forming process and the transparent conductive film crystallization process are repeated as many times as necessary (FIGS. 1A to 1F).

また、透明導電膜積層体の全光線透過率と導電率のバランスを考慮すると、透明導電膜の全光線透過率は８０％以上、透明導電膜の総膜厚は５０〜２００ｎｍ程度が好ましい。 In consideration of the balance between the total light transmittance and the conductivity of the transparent conductive film laminate, the total light transmittance of the transparent conductive film is preferably 80% or more, and the total film thickness of the transparent conductive film is preferably about 50 to 200 nm.

また、透明導電膜を分割成膜する際には、内部応力を低減するために１層の膜厚を少なくとも１００ｎｍ以下にすることが好ましい。このとき、分割した層の膜厚は均等である必要はない。 In addition, when the transparent conductive film is formed in divided layers, it is preferable that the thickness of one layer be at least 100 nm or less in order to reduce internal stress. At this time, the thicknesses of the divided layers need not be equal.

まず、基材１として厚さ２００μｍ、大きさ１００ｍｍ角の透明なポリエーテルサルフォン（ＰＥＳ）を、搬送トレイへの基材装着室５において搬送トレイ１１に装着して真空排気を行った。 First, a transparent polyethersulfone (PES) having a thickness of 200 μm and a size of 100 mm square as the substrate 1 was mounted on the transfer tray 11 in the substrate mounting chamber 5 to the transfer tray and evacuated.

次に、基材１を装着した搬送トレイ１１を成膜室６まで搬送した。 Next, the transfer tray 11 on which the substrate 1 was mounted was transferred to the film forming chamber 6.

次に、成膜源９を設置した成膜室６で、基材１上に、イオンプレーティング法で透明導電膜２としてＩＴＯ（Ｉｎｄｉｕｍ Ｔｉｎ Ｏｘｉｄｅ）膜を４０ｎｍ成膜した。（図１（ａ）および図２）。 Next, an ITO (Indium Tin Oxide) film having a thickness of 40 nm was formed as the transparent conductive film 2 on the base material 1 by the ion plating method in the film formation chamber 6 in which the film formation source 9 was installed. (FIG. 1 (a) and FIG. 2).

次に、搬送トレイ１１を紫外線照射装置１０が設置されたアニール室７に移動し、透明導電膜２に、ＡｒＦエキシマランプを用い、１０ｍＷ／ｃｍ２の条件で、５分間紫外線を照射して透明導電膜結晶化層２０を形成した（図１（ｂ）および図２）。この時、基材１の温度が１４０℃となるような熱アニールを併用した。 Next, the transfer tray 11 is moved to the annealing chamber 7 in which the ultraviolet irradiation device 10 is installed, and the transparent conductive film 2 is irradiated with ultraviolet rays for 5 minutes under the condition of 10 mW / cm 2 using an ArF excimer lamp. A conductive film crystallized layer 20 was formed (FIGS. 1B and 2). At this time, thermal annealing was used in combination so that the temperature of the substrate 1 was 140 ° C.

次に、搬送トレイ１１を成膜室６に戻し、透明導電膜結晶化層２０の上に、イオンプレーティング法で透明導電膜３としてＩＴＯ膜を４０ｎｍ積層した。（図１（ｃ）および図２）。 Next, the transport tray 11 was returned to the film forming chamber 6, and an ITO film having a thickness of 40 nm was laminated on the transparent conductive film crystallization layer 20 as the transparent conductive film 3 by an ion plating method. (FIG. 1 (c) and FIG. 2).

次に、搬送トレイ１１を紫外線照射装置１０が設置されたアニール室７に移動し、透明導電膜３に、ＡｒＦエキシマランプを用い、１０ｍＷ／ｃｍ２の条件で、５分間紫外線を照射して、透明導電膜結晶化層３０を形成した（図１（ｄ）および図２）。この時、基材１の温度が１４０℃となるような熱アニールを併用した。 Next, the transfer tray 11 is moved to the annealing chamber 7 in which the ultraviolet irradiation device 10 is installed, and the transparent conductive film 3 is irradiated with ultraviolet rays for 5 minutes under the condition of 10 mW / cm 2 using an ArF excimer lamp. A transparent conductive film crystallized layer 30 was formed (FIG. 1 (d) and FIG. 2). At this time, thermal annealing was used in combination so that the temperature of the substrate 1 was 140 ° C.

次に、搬送トレイ１１を成膜室６に戻し、透明導電膜結晶化層３０の上に、イオンプレーティング法で透明導電膜４としてＩＴＯ膜を４０ｎｍ積層した。（図１（ｅ）および図２）。 Next, the transfer tray 11 was returned to the film forming chamber 6, and an ITO film having a thickness of 40 nm was laminated on the transparent conductive film crystallization layer 30 as the transparent conductive film 4 by an ion plating method. (FIG. 1 (e) and FIG. 2).

次に、搬送トレイ１１を紫外線照射装置１０が設置されたアニール室７に移動し、透明導電膜４に、ＡｒＦエキシマランプを用い、１０ｍＷ／ｃｍ２の条件で、５分間紫外線を照射して、透明導電膜結晶化層４０を形成した（図１（ｄ）および図２）。この時、基材１の温度が１４０℃となるような熱アニールを併用した。 Next, the transfer tray 11 is moved to the annealing chamber 7 in which the ultraviolet irradiation device 10 is installed, and the transparent conductive film 4 is irradiated with ultraviolet rays for 5 minutes under the condition of 10 mW / cm 2 using an ArF excimer lamp. A transparent conductive film crystallized layer 40 was formed (FIG. 1 (d) and FIG. 2). At this time, thermal annealing was used in combination so that the temperature of the substrate 1 was 140 ° C.

得られた透明導電膜のＸＲＤパターンを測定したところ、膜内部のどの部分においてもアモルファスは混在せず、透明導電膜の結晶に起因するシャープなＸ線回折ピークが観察された。 When the XRD pattern of the obtained transparent conductive film was measured, amorphous was not mixed in any part inside the film, and a sharp X-ray diffraction peak due to the crystal of the transparent conductive film was observed.

また、この透明導電膜の内部応力を測定したところ、５０１ＭＰａであった。 Moreover, it was 501 MPa when the internal stress of this transparent conductive film was measured.

また、この透明導電膜の比抵抗値を測定したところ、２．４×１０Ｅ−４Ω・ｃｍであった。 Moreover, it was 2.4 * 10E-4 ohm * cm when the specific resistance value of this transparent conductive film was measured.

また、この透明導電膜積層体の全光線透過率は８８％であった。
＜比較例１＞ Moreover, the total light transmittance of this transparent conductive film laminated body was 88%.
<Comparative Example 1>

まず、基材として厚さ２００μｍ、大きさ１００ｍｍ角の透明なポリエーテルサルフォン（ＰＥＳ）を、イオンプレーティング成膜装置に装着し、真空排気を行った。 First, a transparent polyethersulfone (PES) having a thickness of 200 μm and a size of 100 mm square as a substrate was attached to an ion plating film forming apparatus and evacuated.

次に、基材上に、イオンプレーティング法で透明導電膜としてＩＴＯ膜を１２０ｎｍ成膜した。 Next, an ITO film having a thickness of 120 nm was formed as a transparent conductive film on the substrate by an ion plating method.

次に、透明導電膜に、ＡｒＦエキシマランプを用い、１０ｍＷ／ｃｍ２の条件で、１５分間紫外線を照射して、透明導電膜結晶化層を形成した。この時、基材１の温度が１４０℃となるような熱アニールを併用した。 Next, an ArF excimer lamp was used for the transparent conductive film, and ultraviolet light was irradiated for 15 minutes under the condition of 10 mW / cm 2 to form a transparent conductive film crystallized layer. At this time, thermal annealing was used in combination so that the temperature of the substrate 1 was 140 ° C.

得られた透明導電膜のＸＲＤパターンを測定したところ、膜表面は結晶化しているが、膜の内部ほどITO結晶に起因する回折ピーク強度は減少し、アモルファスに起因するＸ線回折ピークが観察された。 When the XRD pattern of the obtained transparent conductive film was measured, the film surface was crystallized, but the diffraction peak intensity attributed to the ITO crystal decreased toward the inside of the film, and an X-ray diffraction peak attributed to amorphous was observed. It was.

また、この透明導電膜の内部応力を測定したところ、８４８ＭＰａであった。 Moreover, it was 848 MPa when the internal stress of this transparent conductive film was measured.

また、この透明導電膜の比抵抗値を測定したところ、２．８×１０Ｅ−４Ω・ｃｍであった。 Moreover, it was 2.8 * 10E-4 ohm * cm when the specific resistance value of this transparent conductive film was measured.

また、この透明導電膜積層体の全光線透過率は８９％であった。
＜比較例２＞ Moreover, the total light transmittance of this transparent conductive film laminated body was 89%.
<Comparative example 2>

まず、基材として厚さ２００μｍ、大きさ１００ｍｍ角の透明なポリエーテルサルフォン（ＰＥＳ）を、イオンプレーティング成膜装置にセットし、真空排気を行った。 First, transparent polyethersulfone (PES) having a thickness of 200 μm and a size of 100 mm square as a substrate was set in an ion plating film forming apparatus, and evacuated.

次に、基材上に、イオンプレーティング法で透明導電膜としてＩＴＯ膜を４０ｎｍ成膜した。 Next, an ITO film having a thickness of 40 nm was formed as a transparent conductive film on the substrate by an ion plating method.

次に、透明導電膜に、１８０℃・６０分の条件で、熱アニール処理をして、透明導電膜結晶化層を形成した。 Next, the transparent conductive film was thermally annealed at 180 ° C. for 60 minutes to form a transparent conductive film crystallized layer.

次に、透明導電膜結晶化層上に、イオンプレーティング法で透明導電膜としてＩＴＯ膜を４０ｎｍ積層した。 Next, an ITO film having a thickness of 40 nm was laminated as a transparent conductive film on the transparent conductive film crystallized layer by an ion plating method.

次に、この透明導電膜に、１８０℃・６０分の条件で、熱アニール処理をして、透明導電膜結晶化層を形成した。 Next, this transparent conductive film was subjected to a thermal annealing process at 180 ° C. for 60 minutes to form a transparent conductive film crystallized layer.

次に、透明導電膜結晶化層上に、イオンプレーティング法で透明導電膜としてＩＴＯ膜を４０ｎｍ積層した。 Next, an ITO film having a thickness of 40 nm was laminated as a transparent conductive film on the transparent conductive film crystallized layer by an ion plating method.

次に、この透明導電膜に、１８０℃・６０分の条件で、熱アニール処理をして、透明導電膜結晶化層を形成した。 Next, this transparent conductive film was subjected to a thermal annealing process at 180 ° C. for 60 minutes to form a transparent conductive film crystallized layer.

得られた透明導電膜のＸＲＤパターンを測定したところ、膜表面は結晶化しているが、膜の内部ほどＩＴＯ結晶に起因する回折ピーク強度は減少し、アモルファスに起因するＸ線回折ピークが観察された。 When the XRD pattern of the obtained transparent conductive film was measured, the film surface was crystallized, but the diffraction peak intensity attributed to the ITO crystal decreased toward the inside of the film, and an X-ray diffraction peak attributed to amorphous was observed. It was.

また、この透明導電膜の内部応力を測定したところ、６８７ＭＰａであった。 Moreover, it was 687 MPa when the internal stress of this transparent conductive film was measured.

また、この透明導電膜の比抵抗値を測定したところ、３．９×１０Ｅ−４Ω・ｃｍであった。 Moreover, it was 3.9 * 10E-4 ohm * cm when the specific resistance value of this transparent conductive film was measured.

また、この透明導電膜積層体の全光線透過率は８８％であった。 Moreover, the total light transmittance of this transparent conductive film laminated body was 88%.

本発明は、主に表示素子用途として適用することができる。例えばＬＣＤやＥＬ等の表示素子の電極基板用途として、多様な用途に利用可能である。 The present invention can be applied mainly as a display element. For example, it can be used for various applications as an electrode substrate for display elements such as LCD and EL.

本発明の透明導電膜積層体を説明する断面図である。It is sectional drawing explaining the transparent conductive film laminated body of this invention. 本発明のインライン真空成膜紫外線照射アニール装置を説明する概略図である。It is the schematic explaining the in-line vacuum film-forming ultraviolet irradiation annealing apparatus of this invention.

符号の説明Explanation of symbols

１…基材
２、３、４…透明導電膜（単層）
３…透明導電膜
５…搬送トレイへの基材装着室
６…成膜室
７…アニール室
８…搬送トレイからの基材脱着室
９…成膜源
１０…紫外線照射装置
１１…搬送トレイ
２０、３０、４０…透明導電膜結晶化層 1 ... base material 2, 3, 4 ... transparent conductive film (single layer)
DESCRIPTION OF SYMBOLS 3 ... Transparent electrically conductive film 5 ... Base-material mounting chamber 6 to a conveyance tray ... Film-forming chamber 7 ... Annealing chamber 8 ... Substrate desorption chamber 9 from a conveyance tray ... Film-forming source 10 ... Ultraviolet irradiation apparatus 11 ... Conveyance tray 20, 30, 40 ... Transparent conductive film crystallization layer

Claims (8)

基材の少なくとも片面に透明導電膜が形成されており、該透明導電膜は少なくとも２層以上の積層構成であり、該透明導電膜は１層ごとに紫外線照射アニールによる結晶化処理がなされており、該透明導電膜はアモルファスの混在しない結晶に起因するＸ線回折ピークが観察されることを特徴とする透明導電膜積層体。 A transparent conductive film is formed on at least one surface of the substrate, and the transparent conductive film has a laminated structure of at least two layers, and the transparent conductive film is subjected to crystallization treatment by ultraviolet irradiation annealing for each layer. The transparent conductive film laminate is characterized in that an X-ray diffraction peak due to crystals in which amorphous is not mixed is observed. 前記基材が、フィルムであることを特徴とする請求項１に記載の透明導電膜積層体。 The transparent conductive film laminate according to claim 1, wherein the substrate is a film. 前記透明導電膜が、酸化インジウム、酸化錫、酸化亜鉛のうちの少なくとも１つを含む透明導電膜であることを特徴とする請求項１乃至請求項２の何れかに記載の透明導電膜積層体。 The transparent conductive film laminate according to any one of claims 1 to 2, wherein the transparent conductive film is a transparent conductive film containing at least one of indium oxide, tin oxide, and zinc oxide. . 前記透明導電膜の内部応力が６００ＭＰａ以下であることを特徴とする請求項１乃至請求項３の何れかに記載の透明導電膜積層体。 The transparent conductive film laminate according to any one of claims 1 to 3, wherein an internal stress of the transparent conductive film is 600 MPa or less. 前記透明導電膜の比抵抗値が４．０×１０Ｅ−４Ω・ｃｍ以下であることを特徴とする請求項１乃至請求項４の何れかに記載の透明導電膜積層体。 The specific resistance value of the said transparent conductive film is 4.0 * 10E-4 (ohm) * cm or less, The transparent conductive film laminated body in any one of Claim 1 thru | or 4 characterized by the above-mentioned. 前記積層体が、全光線透過率が８０％以上の積層体であることを特徴とする請求項１乃至請求項５の何れかに記載の透明導電膜積層体。 The transparent conductive film laminate according to any one of claims 1 to 5, wherein the laminate is a laminate having a total light transmittance of 80% or more. 前記透明導電膜は、蒸着法、スパッタリング法、ＣＶＤ法、イオンプレーティング法等により形成されたことを特徴とする請求項１乃至請求項６の何れかに記載の透明導電膜積層体の製造方法。 The said transparent conductive film was formed by the vapor deposition method, sputtering method, CVD method, ion plating method, etc., The manufacturing method of the transparent conductive film laminated body in any one of Claim 1 thru | or 6 characterized by the above-mentioned. . 前記透明導電膜の成膜を行う工程と、該透明導電膜の紫外線照射アニールによる結晶化処理を行う工程を、同一装置内で行うことを特徴とする請求項１乃至請求項７の何れかに記載の透明導電膜積層体の製造方法。 8. The method according to claim 1, wherein the step of forming the transparent conductive film and the step of performing crystallization treatment by ultraviolet irradiation annealing of the transparent conductive film are performed in the same apparatus. The manufacturing method of the transparent conductive film laminated body of description.
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