JP2006285013A5 - - Google Patents

Download PDF

Info

Publication number
JP2006285013A5
JP2006285013A5 JP2005106208A JP2005106208A JP2006285013A5 JP 2006285013 A5 JP2006285013 A5 JP 2006285013A5 JP 2005106208 A JP2005106208 A JP 2005106208A JP 2005106208 A JP2005106208 A JP 2005106208A JP 2006285013 A5 JP2006285013 A5 JP 2006285013A5
Authority
JP
Japan
Prior art keywords
sensor
reference unit
circuit
pixels
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005106208A
Other languages
Japanese (ja)
Other versions
JP2006285013A (en
JP5032750B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2005106208A priority Critical patent/JP5032750B2/en
Priority claimed from JP2005106208A external-priority patent/JP5032750B2/en
Publication of JP2006285013A publication Critical patent/JP2006285013A/en
Publication of JP2006285013A5 publication Critical patent/JP2006285013A5/ja
Application granted granted Critical
Publication of JP5032750B2 publication Critical patent/JP5032750B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (6)

光電変換素子を有する画素がそれぞれ複数配列された基準部と参照部を有し、位相差を検出するAFセンサにおいて、
前記基準部と参照部から出力される信号を個別のチャンネルの出力回路に出力し、前記各出力回路は、互いに隣接して配置され、前記各出力回路は、前記基準部及び参照部の画素からの出力を基準電圧でクランプするクランプ回路を有し、前記各出力回路に含まれる各クランプ回路に対して前記基準電圧を供給するバイアス供給回路を共通化していることを特徴とするAFセンサ。
In an AF sensor that has a standard part and a reference part in which a plurality of pixels each having a photoelectric conversion element are arranged and detects a phase difference,
The signals output from the reference unit and the reference unit are output to output circuits of individual channels, the output circuits are arranged adjacent to each other, and the output circuits are connected to the pixels of the reference unit and the reference unit. An AF sensor comprising: a clamp circuit that clamps the output of the reference voltage with a reference voltage; and a common bias supply circuit that supplies the reference voltage to each clamp circuit included in each output circuit.
前記各出力回路は、基準部又は参照部の一方に配列された遮光画素の黒レベル信号を出力する回路として兼用されることを特徴とする請求項1に記載のAFセンサ。   2. The AF sensor according to claim 1, wherein each of the output circuits is also used as a circuit that outputs a black level signal of a light-shielded pixel arranged in one of a standard part or a reference part. 前記複数の画素は、ラインセンサ又はエリアセンサとして配列されていることを特徴とする請求項1に記載のAFセンサ。   The AF sensor according to claim 1, wherein the plurality of pixels are arranged as a line sensor or an area sensor. 前記複数の画素はエリアセンサとして配列されており、前記基準部と参照部の各撮像領域のそれぞれに対して、水平駆動回路、垂直転送回路及び垂直シフトレジスタを具備することを特徴とする請求項1に記載のAFセンサ。   The plurality of pixels are arranged as an area sensor, and each pixel has a horizontal drive circuit, a vertical transfer circuit, and a vertical shift register for each imaging region of the reference unit and the reference unit. The AF sensor according to 1. 前記複数の画素はラインセンサとして配列されており、前記基準部と参照部のそれぞれに対して、垂直転送回路及び垂直シフトレジスタを具備することを特徴とする請求項1に記載のAFセンサ。   The AF sensor according to claim 1, wherein the plurality of pixels are arranged as a line sensor, and each of the reference unit and the reference unit includes a vertical transfer circuit and a vertical shift register. 請求項1乃至5のいずれか1項に記載のAFセンサを具備することを特徴とするカメラ。   A camera comprising the AF sensor according to claim 1.
JP2005106208A 2005-04-01 2005-04-01 AF sensor and camera using the same Expired - Fee Related JP5032750B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005106208A JP5032750B2 (en) 2005-04-01 2005-04-01 AF sensor and camera using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005106208A JP5032750B2 (en) 2005-04-01 2005-04-01 AF sensor and camera using the same

Publications (3)

Publication Number Publication Date
JP2006285013A JP2006285013A (en) 2006-10-19
JP2006285013A5 true JP2006285013A5 (en) 2010-12-02
JP5032750B2 JP5032750B2 (en) 2012-09-26

Family

ID=37406998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005106208A Expired - Fee Related JP5032750B2 (en) 2005-04-01 2005-04-01 AF sensor and camera using the same

Country Status (1)

Country Link
JP (1) JP5032750B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5266704B2 (en) * 2007-10-01 2013-08-21 株式会社ニコン Solid-state imaging device
JP2014016382A (en) 2012-07-05 2014-01-30 Sony Corp Solid state image pickup device, electronic equipment and method for pixel read-out

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3847858B2 (en) * 1996-09-27 2006-11-22 キヤノン株式会社 Area image sensor accumulation control device, focus detection device using the same, and camera
JP2002142149A (en) * 2000-11-06 2002-05-17 Mega Chips Corp Picture processing circuit
JP4280446B2 (en) * 2002-01-29 2009-06-17 キヤノン株式会社 Solid-state imaging device and imaging device using the same
JP2004120015A (en) * 2002-09-20 2004-04-15 Ricoh Co Ltd Imaging apparatus
JP4333290B2 (en) * 2003-09-04 2009-09-16 株式会社ニコン Black level correction device and electronic camera

Similar Documents

Publication Publication Date Title
US9385148B2 (en) Solid-state imaging device and electronic camera
JP2010170537A5 (en) Device having a sensor, and display device
JP4475665B2 (en) Solid-state imaging device
TWI397312B (en) Image processing apparatus, image processing method and manufacturing apparatus
TW200733368A (en) Solid-state imaging apparatus and camera
TW200742054A (en) Fused multi-array color image sensor
JP6480862B2 (en) Solid-state imaging device and electronic device
JP2009296364A5 (en)
US20150163430A1 (en) Solid state imaging device
JP2006073733A5 (en)
RU2013102310A (en) SOLID IMAGE SENSOR
JP2008219391A (en) Optoelectric transducer and image-sensing system using it
TW201515467A (en) Solid state imaging element, drive method therefor, and electronic device
JP2008067065A (en) Signal detecting device, signal reading method for the same, and imaging system using the device
TW200704169A (en) CMOS image sensor pixel with selectable binning
TW200746807A (en) Solid-state imaging device, method of driving solid-state imaging device, and camera
JP2016134587A (en) Solid state image pickup device and electronic equipment
JP2008104150A (en) Photo detecting apparatus
JP2014120858A (en) Solid-state imaging device
TWI456546B (en) Electro-optical device and electronic apparatus
JP6421342B2 (en) Solid-state imaging device
JP2015005879A5 (en)
KR100785528B1 (en) Wide dynamic range image sensor and pixel array of image sensor
JP2016019137A (en) Solid-state imaging device and driving method therefor
JP5263239B2 (en) Solid-state imaging device and imaging apparatus