JP2006279079A - Semiconductor light emitting element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a refractive-index waveguide semiconductor light emitting element group III nitride based material having an active layer containing In with a reduced operating voltage, whose etching depth can be well controlled and which is easy to be manufactured. <P>SOLUTION: At least a first conductive-type cladding layer, an active layer, a second conductive-type etching stop layer, a first conductive-type or half-insulating current constriction layer, a second conductive-type cladding layer and a second conductive-type contact layer are laminated on a substrate. The active layer is composed of a group III nitride material containing In. The second conductive-type etching stop layer is composed of a group III nitride material containing In with a larger forbidden bandwidth than the active layer. The first conductive-type or half-insulating current constriction layer is composed of a group III nitride material containing As or P but no In. Etching is performed up to the surface of the second conductive-type etching stop layer to form a stripe region. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device based on a group III nitride material.

  Conventionally, a group III nitride compound semiconductor laser element as disclosed in Patent Document 1 is known.

  FIG. 7 is a configuration diagram of a conventional group III nitride compound semiconductor laser device disclosed in Patent Document 1. In FIG. Referring to FIG. 7, an n-type GaN layer 2, an n-type AlGaN clad layer 3, an InGaN active layer 4, and a p-type AlGaN clad layer are formed on the a-plane of the n-type α-SiC substrate 1 using MOCVD. 5. A p-type GaN layer 6 is sequentially stacked.

Then, on both sides of the p-type GaN layer 6 except for the central portion of the surface, a stripe-shaped insulating layer 7 made of SiO ₂ or SiN is formed for current confinement, and the insulating layer 7 and the surface of the p-type GaN layer 6 are covered. An Au electrode 8 is formed. An Ni electrode 9 is formed on the lower surface of the α-SiC substrate 1. In the structure shown in FIG. 7, the current is confined to a stripe-shaped region by an insulating layer 7 formed on the surface of the p-type GaN layer 6, and a gain waveguide type semiconductor laser device is obtained.

  As described above, the group III nitride material-based semiconductor laser device shown in FIG. 7 is a gain waveguide type. However, in order to further reduce the threshold current and stabilize the transverse mode to a high optical output, the semiconductor laser device is operated. It is necessary to use a refractive index guided type.

  FIG. 8 is a cross-sectional view of a group III nitride compound semiconductor laser device disclosed in Patent Document 2. Referring to FIG. 8, on the sapphire substrate 10, a low-temperature buffer layer 11 made of n-type GaN, a high-temperature buffer layer 12, a lower cladding layer 13 made of n-type AlGaN, and made of non-doped or n-type or p-type InGaN. A p-type upper cladding layer 15 having the same composition as the active layer 14 and the lower cladding layer 13, a contact layer 16 composed of a p-type GaN layer 19 and a p-type InGaN layer 20 are sequentially stacked.

  A p-side electrode 17 is formed on the contact layer 16, and an n-side electrode 18 is formed on the high-temperature buffer layer 12 exposed by etching a part of the stacked semiconductor layers. Further, the contact layer 16 and a part of the p-type cladding layer 15 are etched to form a mesa shape in accordance with the p-side electrode 17.

  In this way, the structure shown in FIG. 8 has a ridge waveguide formed by a mesa shape formed by etching up to the active layer 14, so that not only current but also light is confined in the horizontal lateral direction. This is an index-guided semiconductor laser element.

  However, in the group III nitride material-based semiconductor laser device shown in FIG. 8, the ridge waveguide etches part of the contact layer 16 and the p-type cladding layer 15 from the surface of the device, and above the InGaN active layer 14. When the etching depth is varied, the effective refractive index of the ridge waveguide changes, and the device characteristics such as the laser threshold current and the far-field image change. Therefore, it is necessary to precisely control the etching depth.

FIG. 9 is a diagram showing an example of a typical refractive index guided semiconductor laser of the AlGaAs material system disclosed in Patent Document 3. Referring to FIG. 9, an n-type AlGaAs lower cladding layer 22, an undoped or n-type or p-type AlGaAs active layer 23, a p-type AlGaAs first upper cladding layer 24, an n-type GaAs current are formed on an n-type GaAs substrate 21. The limiting layer 25, the p-type AlGaAs second upper cladding layer 26, and the p-type GaAs contact layer 27 are sequentially stacked. A p-side electrode 28 and an n-side electrode 29 are formed on the upper surface of the p-type GaAs contact layer 27 and the lower surface of the n-type GaAs substrate 21, respectively. In this structure, the current limiting layer 25 made of n-type GaAs limits the injection current to a stripe-shaped region having a width w, and at the same time, absorbs light generated in the active layer, thereby providing a refractive index difference inside and outside the stripe. it can. Therefore, light is confined in the region of width w and can be stably guided.
JP-A-8-125275 JP-A-8-97468 JP-A-8-97503

  The structure of the semiconductor laser as shown in FIG. 9 is a structure widely used in the AlGaAs material system. In the AlGaAs material system, it is relatively easy to selectively etch GaAs and AlGaAs by chemical etching. Therefore, the n-type GaAs current limiting layer 25 is formed in a stripe shape having a width w and a p-type AlGaAs first upper cladding layer. The stripe structure is formed by selectively etching up to 24 surfaces.

  On the other hand, the group III nitride material system is hardly etched by chemical etching, and it is difficult to selectively etch InGaN, GaN, and AlGaN, respectively, unlike the AlGaAs material system. Therefore, when the structure as shown in FIG. 9 is manufactured using a group III nitride material system, the current confinement layer must be dry-etched while precisely controlling the etching depth, which makes manufacturing difficult. ing.

  INDUSTRIAL APPLICABILITY The present invention provides a refractive index guided group III nitride material-based semiconductor light emitting device (semiconductor) having an active layer containing In that has good controllability of etching depth, is easy to manufacture, and has a reduced operating voltage. It is an object to provide a laser element.

  In order to achieve the above object, the invention described in claim 1 is characterized in that at least a first conductivity type cladding layer, an active layer, a second conductivity type etching stop layer, a first conductivity type or semi-insulating current is formed on a substrate. A structure including a constriction layer, a second conductivity type cladding layer, and a second conductivity type contact layer is laminated, the active layer is made of a group III nitride material containing In, and the second conductivity type etching stop layer is made of In. A Group III nitride material comprising a Group III nitride material containing a forbidden band larger than that of the active layer, wherein the first conductivity type or semi-insulating current confinement layer does not contain In but contains at least As or P The stripe region is formed by etching to the surface of the second conductivity type etching stop layer.

According to the first aspect of the present invention, the first conductivity type or semi-insulating current confinement layer having the stripe region is laminated on the second conductivity type etching stop layer, and In is used as the material of the current confinement layer. Since a group III nitride material system containing at least As or P is used without containing, even when the active layer is made of a material containing In, the forbidden band width of the current confinement layer is smaller than that of the active layer. Therefore, a refractive index guided semiconductor laser can be configured.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. The semiconductor laser device of the present invention basically includes a group III nitride material-based semiconductor laser device in which an active layer is sandwiched between an n-type cladding layer and a p-type cladding layer. An etching stop layer made of a group III nitride material containing In and having a forbidden band width larger than that of the active layer is stacked in the vicinity of the active layer, and does not contain In up to the surface of the etching stop layer. A layer structure made of a group III nitride material is etched to form a stripe structure.

  In the semiconductor light emitting device of the present invention, when current is injected into the semiconductor light emitting device, light emission is recombined in the active layer made of a group III nitride material sandwiched between the n-type cladding layer and the p-type cladding layer, so Light is emitted. The emitted light is amplified by stimulated emission while being guided through an active layer sandwiched between clad layers, and resonates between the reflecting mirrors on both end faces of the device to oscillate.

  The stripe structure formed by etching up to the surface of the etching stop layer stacked in the vicinity of the active layer functions to concentrate the current injected into the active layer limited to the width of the stripe. Thereby, the threshold current of the laser can be reduced.

  The etching stop layer stacked in the vicinity of the active layer is made of a material having a larger forbidden band than the active layer. Therefore, the injected carriers are not recombined in the etching stop layer, and the generation of leakage current can be suppressed. Further, since light emitted from the active layer is not absorbed by the etching stop layer, no light absorption loss occurs.

  In dry etching using a chlorine-based gas, since the boiling point of In chloride is as high as 500 ° C. or higher, the etching rate of a material containing In tends to be lower than that of a material not containing In. Therefore, by etching while controlling the temperature of the sample at a low temperature so that the temperature of the sample to be etched does not increase, the etching rate can be extremely reduced in the layer containing In. In the semiconductor laser device of the present invention, a layer made of a group III nitride material not containing In is dry-etched with a chlorine-based gas up to the surface of the etching stop layer containing In to form a stripe structure. Therefore, the etching depth can be strictly defined by the position and thickness of the etching stop layer.

FIG. 1 is a diagram showing a configuration example of a semiconductor light emitting device (semiconductor laser device) according to the present invention. Referring to FIG. 1, this semiconductor laser device includes a GaN buffer layer 102, an n-type GaN contact layer 103, an n-type Al _0.15 Ga _0.85 N cladding layer 104, an In _0.05 Ga _0.95 N active layer 105, on a sapphire substrate 101. A p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106, a p-type Al _0.15 Ga _0.85 N cladding layer 107, and a p-type GaN contact layer 108 are sequentially stacked. Reference numeral 109 denotes a p-side electrode formed on the p-type GaN contact layer 108, and 110 denotes an n-side electrode formed on the n-type GaN contact layer 103.

FIG. 2 is a diagram showing an example of a manufacturing process of the semiconductor laser device of FIG. In this manufacturing process example, first, a GaN buffer layer 102 having a thickness of about 0.02 μm, an n-type GaN contact layer 103 having a thickness of about 3 μm, and an n-type Al _0.15 Ga having a thickness of about 0.8 μm are formed on the sapphire substrate 101. _0.85 N cladding layer 104, In _0.05 Ga _0.95 N active layer 105 having a thickness of about _0.05 μm, p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 having a thickness of about 0.1 μm, and a thickness of about 0.8 μm A p-type Al _0.15 Ga _0.85 N clad layer 107 and a p-type GaN contact layer 108 having a thickness of about 0.2 μm are sequentially epitaxially grown by MOCVD (FIG. 2A).

Next, except for the stripe region having a width of about 5 μm, the p-type GaN contact layer 108 and the p-type Al _0.15 Ga _0.85 N clad layer 107 are dry etched almost vertically using the ECR-RIBE method (FIG. 2B). . This forms a ridge waveguide for confining horizontal current and light. At this time, the p-type GaN contact layer 108 and the p-type Al _0.15 Ga _0.85 N cladding layer 107 not containing In are obtained by using a chlorine-based gas as an etching gas and controlling the substrate temperature to be close to room temperature. Etching is almost stopped when reaching the surface of the p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 containing In. This is because the boiling point of the chlorine compound of In is as high as 500 ° C. or higher.

Next, in order to form an n-side electrode, dry etching is performed by ECR-RIBE from the surface of the p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 to the middle of the n-type GaN contact layer 103 (FIG. 2 ( c)). At this time, a chlorine-based gas is used as an etching gas, and the substrate temperature is controlled to be 200 ° C. or higher. Thereby, the In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 containing In and the In _0.05 Ga _0.95 N active layer 105 are also etched.

  Thereafter, the p-side electrode 109 is formed on the surface of the p-type GaN contact layer 108 on the top of the ridge waveguide by vacuum deposition, and the n-type GaN contact layer 103 exposed by etching in the step of FIG. An n-side electrode 110 is formed on the surface by vacuum deposition. Finally, the substrate is separated into chips to form a resonator (FIG. 2D).

  By the way, in such a ridge waveguide type semiconductor laser device, it is important to control the distance from the active layer to the bottom surface of the ridge stripe. This is because the effective refractive index difference inside and outside the ridge waveguide varies with this distance. If the distance from the active layer to the bottom surface of the ridge stripe varies, the distribution of light in the horizontal and horizontal directions changes, and the characteristics such as the far field image and threshold current of the laser vary.

1 and 2, an In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 containing In is stacked on an In _0.05 Ga _0.95 As active layer 105, and an In _0.07 Ga _0.6 Al _0.33 N etching stop layer is formed. The etching depth d1 is controlled by stopping dry etching on the surface of the layer 105. Therefore, since the distance from the active layer 105 to the bottom surface of the ridge stripe (the bottom surface of the p-type Al _0.15 Ga _0.85 N cladding layer 107) can be set by the layer thickness of the In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106, the controllability is good. An element can be manufactured.

  On the other hand, in the dry etching process shown in FIG. 2C, the etching stop layer 106 is also etched, and the function of the etching stop layer 106 is not used. In this case, in order to take the n-side electrode, the bottom surface of the etching only needs to be in the n-type GaN contact layer 103 having a layer thickness of about 3 μm, so that strictness is not required for controlling the etching depth.

Further, in the configuration example of FIG. 1, the forbidden band width of the In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 is larger than the forbidden band width of the In _0.05 Ga _0.95 As active layer 105. Therefore, even if the etching stop layer 106 is formed adjacent to the active layer 105, carriers are not recombined in the etching stop layer 106, so that generation of leakage current can be suppressed. Further, since the In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 is a transparent medium that does not absorb the light emitted from the In _0.05 Ga _0.95 As active layer 105, no light absorption loss occurs. Also, with respect to the refractive index, the In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 is smaller than the In _0.05 Ga _0.95 As active layer 105, and thus acts to confine light in the active layer 105.

From the above, the material used for the etching stop layer 106 must be a group III nitride containing In and having a larger forbidden band than the active layer 105. For example, when the material of the active layer 105 is GaN, In _0.18 Al _0.82 N lattice-matched with GaN or a mixed crystal of In _0.18 Al _0.82 N and GaN is used for the etching stop layer 106. When the material of the active layer 105 is InGaN, InGaN having an In content smaller than that of the active layer 105 can be used as the etching stop layer 106 in addition to the above materials.

  As described above, the group III nitride material semiconductor laser device of FIG. 1 has at least the first conductivity type cladding layer 104, the active layer 105, the second conductivity type etching stop layer 106, and the second conductivity on the substrate 101. The structure including the type cladding layer 107 and the second conductivity type contact layer 108 is laminated, and the second conductivity type etching stop layer 106 is a group III nitride material containing In and has a larger forbidden band than the active layer 105. The layer above the etching stop layer 106 is made of a group III nitride material system that does not contain In. The second conductivity type contact layer 108 and the second conductivity type cladding layer 107 are formed from the element surface. Is etched almost perpendicularly to the surface of the second conductivity type etching stop layer 106 to form a ridge waveguide.

  In the group III nitride material-based semiconductor laser device of FIG. 1, the second conductivity type etching stop layer 106 made of a group III nitride material containing In and having a larger forbidden band width than the active layer 105 is formed on the active layer 105. The second conductivity type contact layer 108 and the second conductivity type clad layer 107, which are provided on the upper surface and are made of a group III nitride material system not containing In, extend from the element surface to the surface of the second conductivity type etching stop layer 106. Since the ridge waveguide is formed by etching almost vertically, and the dry etching can be stopped on the surface of the etching stop layer 106 containing In, the etching depth of the ridge waveguide can be strictly controlled. Since the current is confined in the ridge waveguide region, the threshold current is reduced. Further, since the light emitted from the active layer 105 is guided through the ridge waveguide, it operates as a refractive index waveguide type conductor laser with a stable horizontal transverse mode.

FIG. 3 is a diagram showing another configuration example of the semiconductor light emitting device (semiconductor laser device) according to the present invention. The semiconductor laser device shown in FIG. 3 has the same stacked structure as that of the configuration example shown in FIG. 1, except that the ridge waveguide has an inverted mesa shape. Is different. The inverted mesa-shaped ridge waveguide is formed by dry etching at an angle of about 45 degrees by irradiating the substrate 101 with an ion beam obliquely in the step of dry etching the ridge waveguide by the ECR-RIBE method. Formed by. In this case, it is necessary to perform dry etching twice because the side surfaces of the ridge waveguide are dry-etched obliquely at different angles. As in the semiconductor laser device shown in FIG. 1, the dry etching can be stopped on the surface of the In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106, so that the etching depth can be easily controlled.

In the structure in which the ridge waveguide has an inverted mesa shape as shown in FIG. 3, even when the lower width w ₂ of the ridge waveguide is reduced to, for example, about 3 μm, the upper width w ₁ of the ridge waveguide is increased to about 6 μm. be able to. Therefore, the current can be confined in the narrow stripe region of the active layer 105, and at the same time, the contact area between the p-side electrode 109 and the p-type GaN contact layer 108 can be widened to suppress an increase in contact resistance. The threshold current and operating voltage of the device can be reduced.

  In other words, the group III nitride material-based semiconductor laser device of FIG. 3 has at least a first conductivity type cladding layer 104, an active layer 105, a second conductivity type etching stop layer 106, and a second conductivity type on a substrate 101. A structure including the cladding layer 107 and the second conductivity type contact layer 108 is laminated, and the second conductivity type etching stop layer 106 is a group III nitride material containing In and a material having a larger forbidden band than the active layer 105. The layer above the etching stop layer 106 is made of a group III nitride material system that does not contain In, and the second conductivity type contact layer 108 and the second conductivity type cladding layer 107 are formed from the element surface. A ridge waveguide is formed by etching in a reverse mesa shape up to the surface of the second conductivity type etching stop layer 106.

  That is, in the group III nitride material-based semiconductor laser device of FIG. 3, the second conductivity type etching stop layer 106 made of a group III nitride material containing In and having a larger forbidden band width than the active layer 105 is used as the active layer. The second conductivity type contact layer 108 and the second conductivity type clad layer 107, which are provided on the upper surface of the element 105 and are made of a group III nitride material system not containing In, are formed on the second conductivity type etching stop layer 106. A ridge waveguide is formed by etching in a reverse mesa shape to the surface.

  Accordingly, as in the semiconductor laser device of FIG. 1, the refractive index waveguide type conductor laser has a ridge waveguide. However, in the semiconductor laser device of FIG. 3, the ridge waveguide has an inverted mesa shape. In addition, by making the ridge waveguide into an inverted mesa shape, the width for confining the current can be narrowed, and the contact area between the upper electrode 109 and the second conductivity type contact layer 108 can be increased. That is, the contact resistance with the electrode can be reduced, and the operating voltage of the element can be lowered. In particular, in the group III nitride material system, it is difficult to increase the carrier concentration of the p-type semiconductor layer, and the contact resistance between the p-side electrode and the p-type semiconductor layer is increased. Therefore, when the upper electrode is a p-side electrode, an inverted mesa shape that can reduce the contact resistance with the electrode is effective.

FIG. 4 is a diagram showing another configuration example of the semiconductor light emitting device (semiconductor laser device) according to the present invention. The semiconductor laser device of FIG. 4 is similar to the semiconductor laser device shown in FIGS. 1 and 3 with respect to the stacked structure of the devices, but in the semiconductor laser device of FIG. 4, both sides of the ridge waveguide (stripe structure) are provided. A diffraction grating 401 is formed by periodic etching from the element surface to the surface of the In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 in parallel with the ridge waveguide (stripe structure).

Here, more specifically, the diffraction grating 401 is formed by dry etching by an ECR-RIBE method using a chlorine-based gas, and is dry on the surface of the In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 containing In. Etching stops. Therefore, the etching depth of the diffraction grating 401 can be formed with good controllability.

  In the configuration of FIG. 4, since light leaking outside the stripe regions (ridge waveguides) 107 and 108 into which current is injected is reflected by the diffraction grating 401, the light reliably passes through the stripe regions (ridge waveguide). Waveguide. Thereby, the semiconductor laser device of FIG. 4 operates as a stable refractive index waveguide type semiconductor laser.

  In other words, the group III nitride material-based semiconductor laser device of FIG. 4 has at least a first conductivity type cladding layer 104, an active layer 105, a second conductivity type etching stop layer 106, and a second conductivity type cladding on a substrate 101. The structure including the layer 107 and the second conductivity type contact layer 108 is laminated, and the second conductivity type etching stop layer 106 is a group III nitride material containing In and made of a material having a larger forbidden band width than the active layer 105. Further, the layer above the etching stop layer 106 is made of a group III nitride material system that does not contain In, and is formed on both sides of the stripe structure (ridge structure) 107, 108 in parallel with the stripe structures 107, 108. The second conductivity type contact layer 107 and the second conductivity type cladding layer 108 are periodically etched from the surface to the surface of the second conductivity type etching stop layer 106. By has assumed that the diffraction grating 401 and ring are formed, it can be operated as a refractive index waveguide conductor laser.

  In this case, the etching stop layer 106 is made of a material containing In, and the dry etching can be stopped on the surface of the etching stop layer 106, so that the etching depth of the diffraction grating 401 is strictly controlled. Can do.

FIG. 5 is a diagram showing another configuration example of the semiconductor light emitting device (semiconductor laser device) according to the present invention. 5 includes a GaN buffer layer 102, an n-type GaN contact layer 103, an n-type Al _0.15 Ga _0.85 N cladding layer 104, an In _0.05 Ga _0.95 N active layer 105, a p-type In _0.07 on a sapphire substrate 101. A Ga _0.6 Al _0.33 N etching stop layer 106 is formed, and an n-type GaN _0.9 P _0.1 current confinement layer 501 is formed on the p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 except for a stripe region where current is injected. Is formed. Further, a p-type Al _0.15 Ga _0.85 N cladding layer 107 and a p-type GaN contact layer 108 are sequentially formed on the n-type GaN _0.9 P _0.1 current confinement layer 501 and the p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106. Are stacked. A p-side electrode 109 is formed on the p-type GaN contact layer 108, and an n-side electrode 110 is formed on the n-type GaN contact layer 103.

FIG. 6 is a diagram showing an example of a manufacturing process of the semiconductor laser device of FIG. In this manufacturing process example, first, a GaN buffer layer 102 having a thickness of about 0.02 μm, an n-type GaN contact layer 103 having a thickness of about 3 μm, and an n-type Al _0.15 Ga having a thickness of about 0.8 μm are formed on the sapphire substrate 101. _0.85 N cladding layer 104, In _0.05 Ga _0.95 N active layer 105 with a layer thickness of about _0.05 μm, p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 with a layer thickness of about 0.1 μm, layer thickness of about 0.2 μm The n-type GaN _0.9 P _0.1 current confinement layer 501 is sequentially epitaxially grown by MOCVD (FIG. 6A).

Next, the n-type GaN _0.9 P _0.1 current confinement layer 501 is dry etched using an ECR-RIBE method to form a stripe region 601 having a width of 5 μm (FIG. 6B). At this time, the n-type GaN _0.9 P _0.1 current confinement layer 501 not containing In is etched by using a chlorine-based gas as an etching gas and controlling the substrate temperature to be close to room temperature. When reaching the surface of the p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106, the etching is almost stopped.

Next, on the n-type GaN _0.9 P _0.1 current confinement layer 501 and the p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 exposed on the surface of the stripe region 601, p-type Al _0.15 having a layer thickness of about 0.8 μm. The Ga _0.85 N cladding layer 107 and the p-type GaN contact layer 108 having a thickness of about 0.2 μm are epitaxially grown by MOCVD (FIG. 6C).

Then, in order to form an n-side electrode, dry etching is performed by ECR-RIBE from the surface of the p-type GaN contact layer 108 to the middle of the n-type GaN contact layer 103 (FIG. 6D). At this time, a chlorine-based gas is used as an etching gas, and the substrate temperature is controlled to be 200 ° C. or higher. Thereby, the In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 containing In and the In _0.05 Ga _0.95 N active layer 105 are also etched.

  Thereafter, the p-side electrode 109 is formed on the surface of the p-type GaN contact layer 108 by vacuum deposition, and the n-side electrode is formed on the surface of the n-type GaN contact layer 103 exposed by etching in the step of FIG. 110 is formed by vacuum deposition. Finally, the substrate is separated into chips to form a resonator (FIG. 6E).

In the semiconductor laser device of FIG. 5, the n-type GaN _0.9 P _0.1 current confinement layer 501 is etched in a stripe shape up to the surface of the p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106, and the stripe region has a pn structure. Although the current flows, the outside of the stripe region has a pnpn structure, and the current is blocked by the reverse bias junction. Thereby, carriers can be confined in the active layer 105 under the stripe region, and the threshold current of the device can be reduced.

In the semiconductor laser device of FIG. 5, the p-type In _0.07 Ga _0.6 Al _0.33 N etching stop layer 106 is made of a group III nitride material containing In, and the n-type GaN _0.9 P _0.1 current confinement layer 501 contains In. Since it is made of a non-material, the GaN _0.9 P _0.1 current confinement layer 501 can be selectively etched by chlorine gas-based dry etching. Therefore, there is no etching residue of the n-type GaN _0.9 P _0.1 current confinement layer 501, or the etching bottom surface does not reach the In _0.05 Ga _0.95 N active layer 105 due to excessive etching, which facilitates device manufacture. .

In addition, since the current confinement layer 501 is made of GaN _0.9 P _0.1 which is a material having a smaller forbidden band than the In _0.05 Ga _0.95 N active layer 105 and does not contain In, the GaN _0.9 P _0.1 current confinement layer is used. 501 absorbs light emitted from the In _0.05 Ga _0.95 N active layer 105. Therefore, the loss of light increases outside the stripe region, and an effective refractive index difference occurs between the inside and outside of the stripe, and the light is guided through the stripe region. Thereby, it operates as a stable refractive index waveguide type semiconductor laser.

  In addition, since the semiconductor laser device of FIG. 5 has a current confinement layer inside the device, the p-side electrode 109 and the p-type GaN contact are compared with the semiconductor laser device having the structure shown in FIGS. The contact area with the layer 108 can be increased. Therefore, the contact resistance with the p-side electrode can be reduced, and the operating voltage of the element can be further reduced.

  In other words, the group III nitride material-based semiconductor laser device of FIG. 5 has at least a first conductivity type cladding layer 104, an active layer 105, a second conductivity type etching stop layer 106, and a first conductivity type on a substrate 101. Alternatively, a structure including a semi-insulating current confinement layer 501, a second conductivity type cladding layer 107, and a second conductivity type contact layer 108 is laminated, and the second conductivity type etching stop layer 106 is a group III nitride containing In. The current confinement layer 501 is made of a material having a larger forbidden band width than that of the active layer, and the current confinement layer 501 is made of the same material without containing In and having a smaller forbidden band width than that of the active layer. A stripe groove (stripe region) is formed by etching to the surface of the mold etching stop layer.

  In the group III nitride material-based semiconductor laser device of FIG. 5, a second conductivity type etching stop layer 106 is formed on the active layer 105, and a first conductivity type or semi-insulating current confinement layer 501 is formed thereon. A current flows through a stripe groove (stripe region) between the current confinement layers 501 and is injected into the active layer 105.

  Further, since the second conductivity type etching stop layer 106 is made of a group III nitride material containing In, and the current confinement layer 501 is made of a group III nitride material not containing In, the current is generated by chlorine gas-based dry etching. The constriction layer 501 can be selectively etched. Therefore, the etching depth can be controlled strictly.

  The current confinement layer 501 has a forbidden band width smaller than that of the active layer 105 or is made of the same material, and absorbs light emitted from the active layer 105. Accordingly, an effective refractive index is generated inside and outside the stripe region, and light is guided through the stripe region. Thereby, it can be operated as a refractive index waveguide type conductor laser.

  In the above structure, since the current confinement layer 501 is embedded in the element, the width of the second conductivity type contact layer 108 can be increased without depending on the width of the stripe groove. As a result, the contact area between the upper electrode 109 and the second conductivity type contact layer 108 can be increased, and the operating voltage of the element can be reduced.

  Further, in the group III nitride material-based semiconductor laser device of FIG. 5, the active layer 105 is made of a group III nitride material containing In, and the first conductivity type or semi-insulating current confinement layer 105 is made of In It can be made of a group III nitride material containing As or P without containing.

That is, in the semiconductor laser device of FIG. 5, when GaN is used as the material of the active layer 105, GaN which is the same material as the active layer 105 can be used as the material of the current confinement layer 501. However, when the material of the active layer 105 is a material containing In such as InGaN, for example, InGaN cannot be used for the current confinement layer 501 because it contains In. Therefore, in the group III nitride material-based semiconductor laser device of FIG. 5, the current confinement layer 501 does not contain In and has a forbidden band width smaller than that of the active layer or the same material as the group III containing As or P A nitride material system is used. For example, GaNP, GaNAs, GaNASP, etc. are used as the current confinement layer 501. Thereby, the current confinement layer 501 can be selectively etched by chlorine-based dry etching, and can be operated as a refractive index waveguide type semiconductor laser.

It is a figure which shows one structural example of the semiconductor light-emitting device (semiconductor laser device) based on this invention. It is a figure which shows the example of a manufacturing process of the semiconductor light-emitting device (semiconductor laser device) of FIG. It is a figure which shows the other structural example of the semiconductor light-emitting device (semiconductor laser device) based on this invention. It is a figure which shows the other structural example of the semiconductor light-emitting device (semiconductor laser device) based on this invention. It is a figure which shows the other structural example of the semiconductor light-emitting device (semiconductor laser device) based on this invention. FIG. 6 is a diagram showing a manufacturing process example of the semiconductor light emitting device (semiconductor laser device) of FIG. 5. It is a figure which shows the conventional gain waveguide type semiconductor laser using a group III nitride material system. It is a figure which shows the conventional refractive index waveguide type semiconductor laser using a group III nitride material system. It is a figure which shows the conventional refractive index waveguide type semiconductor laser using an AlGaAs material system.

Explanation of symbols

101 Sapphire substrate 102 GaN buffer layer 103 n-type GaN contact layer 104 n-type AlGaN cladding layer 105 InGaN active layer 106 p-type InGaAlN etching stop layer 107 p-type AlGaN cladding layer 108 p-type GaN contact layer 109 p-side electrode 110 n-side electrode 401 Diffraction grating 501 n-type GaNP current confinement layer 601 stripe region

Claims (1)

At least a first conductivity type cladding layer, an active layer, a second conductivity type etching stop layer, a first conductivity type or semi-insulating current confinement layer, a second conductivity type cladding layer, and a second conductivity type contact layer on the substrate The active layer is made of a group III nitride material containing In, and the second conductivity type etching stop layer is a group III nitride material containing In and has a larger forbidden band than the active layer. The first conductivity type or semi-insulating current confinement layer made of a material is made of a group III nitride material not containing In but containing at least As or P, and is etched to the surface of the second conductivity type etching stop layer. A semiconductor light emitting element, wherein a stripe region is formed.

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