JP2006278027A - Electron beam device - Google Patents

Electron beam device Download PDF

Info

Publication number
JP2006278027A
JP2006278027A JP2005092273A JP2005092273A JP2006278027A JP 2006278027 A JP2006278027 A JP 2006278027A JP 2005092273 A JP2005092273 A JP 2005092273A JP 2005092273 A JP2005092273 A JP 2005092273A JP 2006278027 A JP2006278027 A JP 2006278027A
Authority
JP
Japan
Prior art keywords
electron beam
chromatic aberration
axial chromatic
optical system
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005092273A
Other languages
Japanese (ja)
Other versions
JP4980574B2 (en
Inventor
Mamoru Nakasuji
護 中筋
Toru Satake
徹 佐竹
Takeshi Murakami
武司 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2005092273A priority Critical patent/JP4980574B2/en
Priority to KR1020077023974A priority patent/KR20070116260A/en
Priority to TW095109800A priority patent/TW200700717A/en
Priority to US11/909,409 priority patent/US20090014649A1/en
Priority to PCT/JP2006/305688 priority patent/WO2006101116A1/en
Publication of JP2006278027A publication Critical patent/JP2006278027A/en
Application granted granted Critical
Publication of JP4980574B2 publication Critical patent/JP4980574B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To reduce aberration other than axial chromatic aberration and to sufficiently reduce the axial chromatic aberration even when the length of an axial chromatic aberration compensating means is made short and an inside diameter is made large. <P>SOLUTION: Secondary electron emitted from a test piece by irradiation of primary electron beam in a rectangular field of view on the test piece 9 is magnified by a map projection optical system and guided to a plane detector or a linear detector by a secondary electron optical system. The secondary electron optical system is provided with lens 8 and 12 composing an image forming means forming an image by the secondary electron emitted from the test piece, and provided in a subsequent stage, a Vienna filter 13 compensating spherical aberration of a magnified image and magnifying lens 14 and 15 magnifying the electron beam passed through the Vienna filter. The lens 18 is provided with adjustable focal distance and the size of the axial chromatic aberration is made variable and thus, the size of the axial chromatic aberration can be matched with the size of the axial chromatic aberration in the Vienna filter. Therefore, both the spherical aberration and the axial chromatic aberration can be reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、電子線装置に関し、より詳細には、電子線を試料に照射し、それにより試料から放出される電子を検出器で検出することによって、試料の欠陥検出等の評価を、高スループットかつ高信頼性で行うことができる電子線装置に関する。   The present invention relates to an electron beam apparatus, and more specifically, evaluation of sample defect detection and the like is performed by irradiating a sample with an electron beam and detecting electrons emitted from the sample with a detector. The present invention also relates to an electron beam apparatus that can be performed with high reliability.

従来、長方形に成形された電子線（１次電子線）を試料に照射し、それにより試料から放出される電子（２次電子）をＴＤＩ検出器で検出する写像投影型の電子光学系を用いた電子線装置が提案されている。
また、ウィーンフィルタや４極子レンズを用いて軸上色収差を補正できるようにしたＳＥＭ及び透過型電子顕微鏡（ＴＥＭ）も実用化されている。 Conventionally, a projection type electron optical system that irradiates a sample with a rectangular shaped electron beam (primary electron beam) and detects electrons (secondary electrons) emitted from the sample by a TDI detector is used. An electron beam apparatus has been proposed.
In addition, an SEM and a transmission electron microscope (TEM) that can correct axial chromatic aberration using a Wien filter or a quadrupole lens have been put into practical use.

上記したように、ＳＥＭやＴＥＭにおいては、軸上色収差を補正する手段が提案され実用化されているが、これは、軸上色収差係数が１ｍｍ〜１００ｍｍ等の小さい値であるため、比較的簡単に軸上色収差補正レンズを用いて軸上色収差を低減させることが可能であるからである。
これに対して、写像投影型の電子光学系を用いた電子線装置においては、軸上色収差補正係数が数１０ｍｍ〜数ｍと比較的大きいため、軸上色収差補正レンズの長さを巨大にする必要がある。また、軸上色収差補正用に多極子レンズを用いた場合、多極子レンズのボーア径を極端に小さくする必要もあり、電極間距離が短くなるため放電を回避することが不可能なサイズになるという問題もある。 As described above, in SEM and TEM, means for correcting axial chromatic aberration has been proposed and put into practical use, but this is relatively easy because the axial chromatic aberration coefficient is a small value such as 1 mm to 100 mm. This is because it is possible to reduce axial chromatic aberration by using an axial chromatic aberration correction lens.
On the other hand, in an electron beam apparatus using a mapping projection type electron optical system, the axial chromatic aberration correction coefficient is relatively large, from several tens of millimeters to several meters. There is a need. In addition, when a multipole lens is used for correcting axial chromatic aberration, the bore diameter of the multipole lens needs to be extremely small, and the distance between the electrodes becomes short, so that it is impossible to avoid discharge. There is also a problem.

したがって、写像投影型の電子光学系を用いた電子線装置において、従来例の技術を用いて軸上色収差を補正することは必ずしも得策ではない。一方、このような写像投影型の電子光学系を用いた電子線装置において、電子光学系に生じる収差について十分に解析されておらず、したがってどのような収差を補正すれば効果的であるのか、何ら提案されていない状態であった。
さらに、従来の軸上色収差を補正する目的は、１ｎｍ〜０．１ｎｍの超高分解能を得ることが目的であった。これに対して、半導体ウエハを評価する場合、分解能は２０ｎｍ〜１００ｎｍ程度で十分であるが、ビーム電流を大きくすることが求められている。ビーム電流を大きくするには、開口角（ＮＡ）を大きくする必要がある。ＮＡが小さい場合、軸上色収差が大部分であるが、ＮＡを大きくすると、軸上色収差がそれに比例して増加し、かつ、球面収差がＮＡの３乗に比例して大きくなる。そのため、ビーム電流を大きくするためにＮＡを大きくする場合、球面収差が軸上色収差に対比して大きくなり、球面収差を補正することが必須となる。 Therefore, in an electron beam apparatus using a mapping projection type electron optical system, it is not always a good idea to correct axial chromatic aberration using the conventional technique. On the other hand, in the electron beam apparatus using such a projection type electron optical system, the aberration generated in the electron optical system has not been sufficiently analyzed, and therefore what kind of aberration should be corrected, No suggestion was made.
Further, the purpose of correcting the conventional axial chromatic aberration was to obtain an ultrahigh resolution of 1 nm to 0.1 nm. On the other hand, when evaluating a semiconductor wafer, a resolution of about 20 nm to 100 nm is sufficient, but it is required to increase the beam current. In order to increase the beam current, it is necessary to increase the aperture angle (NA). When the NA is small, the axial chromatic aberration is most, but when the NA is increased, the axial chromatic aberration increases in proportion to it, and the spherical aberration increases in proportion to the cube of NA. For this reason, when the NA is increased in order to increase the beam current, the spherical aberration becomes larger than the axial chromatic aberration, and it is essential to correct the spherical aberration.

本発明は、このような従来例の問題点に鑑み、写像投影型の電子光学系を用いた電子線装置における収差発生を解析することによってなされたものである。そして、本発明の目的は、写像投影型の電子光学系を用いた電子線装置において、軸上色収差以外の収差を低減し、かつ、軸上色収差補正手段の長さを小さくかつ内径を大きくしても、軸上色収差を十分に低減することができるようにすることである。   The present invention has been made in view of such problems of the prior art by analyzing aberration generation in an electron beam apparatus using a mapping projection type electron optical system. An object of the present invention is to reduce aberrations other than axial chromatic aberration and to reduce the length and the inner diameter of the axial chromatic aberration correcting means in an electron beam apparatus using a projection type electron optical system. However, it is to be able to sufficiently reduce the longitudinal chromatic aberration.

上記した目的を達成するために、本発明に係る、１次電子ビームを試料上に照射し、該照射により試料から放出される電子を検出することにより、試料上の情報を得るようにした電子線装置においては、
試料上に長方形の視野で１次電子ビームを照射する１次電子光学系と、
試料から放出された２次電子を写像投影光学系で拡大しかつ面検出器又は線検出器に導く２次電子光学系であって、
試料から放出された２次電子による像を形成する結像手段と、
結像手段の後段に設けられ、拡大像の球面収差を補正するウィーンフィルタと、
ウィーンフィルタと検出器との間に設けられ、ウィーンフィルタを経た電子ビームを拡大する拡大手段と
からなる２次電子光学系と
からなることを特徴としている。 In order to achieve the above-mentioned object, the electron according to the present invention is obtained by irradiating a sample with a primary electron beam and detecting electrons emitted from the sample by the irradiation, thereby obtaining information on the sample. In the wire device,
A primary electron optical system for irradiating a primary electron beam on a sample with a rectangular field of view;
A secondary electron optical system that expands secondary electrons emitted from the sample with a mapping projection optical system and guides them to a surface detector or a line detector;
An imaging means for forming an image of secondary electrons emitted from the sample;
A Wien filter which is provided at a subsequent stage of the imaging means and corrects spherical aberration of the magnified image;
A secondary electron optical system that is provided between the Wien filter and the detector and includes an enlarging unit that expands the electron beam that has passed through the Wien filter is characterized.

上記した本発明に係る電子線装置において、一実施形態において、結像手段は２段のレンズからなり、該２段のレンズの内部に電磁偏向器を有するビーム分離器があることが好ましい。また、他の実施形態において、結像手段は、２段のレンズからなり、該２段のレンズの内の後段のレンズは、焦点距離を調整可能に構成されて、該結像手段の軸上色収差の大きさを可変とし、これにより、該軸上色収差の大きさをウィーンフィルタの軸上色収差の大きさと一致させている。
また、本発明に係る電子線装置において、ウィーンフィルタは、複数のパーマロイ板、絶縁スペーサ、励磁コイル、及び円筒形コアからなることが好ましい。
さらに、本発明に係る電子線装置において、１次電子光学系は、長方形の視野を分割した副視野毎に、試料上に１次電子ビームを照射するよう構成され、かつ検出器は、副視野毎に２次電子検出を行うよう構成されていることが好ましい。 In the above-described electron beam apparatus according to the present invention, in one embodiment, it is preferable that the image forming means includes a two-stage lens, and a beam separator having an electromagnetic deflector is provided inside the two-stage lens. In another embodiment, the imaging means is composed of two-stage lenses, and the rear stage lens of the two-stage lenses is configured such that the focal length can be adjusted, and is on the axis of the imaging means. The magnitude of the chromatic aberration is made variable, so that the magnitude of the axial chromatic aberration coincides with the magnitude of the axial chromatic aberration of the Wien filter.
In the electron beam apparatus according to the present invention, the Wien filter preferably includes a plurality of permalloy plates, insulating spacers, excitation coils, and a cylindrical core.
Furthermore, in the electron beam apparatus according to the present invention, the primary electron optical system is configured to irradiate the sample with a primary electron beam for each subfield obtained by dividing the rectangular field, and the detector includes the subfield. It is preferable that secondary electron detection is performed every time.

本発明は、上記したように構成されているので、軸上色収差以外の収差（特に、球面収差）を低減することができる。また、軸上色収差補正手段の長さを小さくかつ内径を大きくしても、軸上色収差を十分に低減することができ、ウィーンフィルタの長さを短くすることができるので、電子線装置の光路長を比較的短くすることができる。また、ウィーンフィルタの内径を大きくすることができるので、電極間距離を比較的大きくすることができ、よって不要な電極間の放電を防止することができる。   Since the present invention is configured as described above, aberrations other than axial chromatic aberration (particularly, spherical aberration) can be reduced. Even if the length of the axial chromatic aberration correcting means is reduced and the inner diameter is increased, the axial chromatic aberration can be sufficiently reduced and the length of the Wien filter can be shortened. The length can be made relatively short. In addition, since the inner diameter of the Wien filter can be increased, the distance between the electrodes can be made relatively large, and thus unnecessary discharge between the electrodes can be prevented.

図１は、本発明の一実施形態の写像投影型の電子光学系を用いた電子線装置の主要部を示している。この電子線装置においては、電子銃１から放出された電子線は、２段のコンデンサレンズ２及び３によって照射領域の大きさ及び照射電流密度が調整され、正方形等の矩形開口４で成形される。成形された矩形の１次電子ビームは、２段の照射レンズ５及び６で倍率を調整され、さらにビーム分離器７及び対物レンズ８を介して、試料９上の長方形の視野内の１つの副視野に照射される。試料９上の視野は、１次電子ビームの走査方向に例えば９個並んだ副視野に分割され、これら副視野の選択は、静電偏向器２５及び２６により行われる。１次電子ビームの照射及び２次電子ビーム検出による画像データの取得は、副視野単位で行われる。
１次電子ビームが２次電子ビームに影響を与えないようにするために、１次電子ビームがビーム分離器７を通過後も、１次電子ビームの経路が２次電子ビームの経路と異なるように設計されている。 FIG. 1 shows a main part of an electron beam apparatus using a projection type electron optical system according to an embodiment of the present invention. In this electron beam apparatus, the size of the irradiation region and the irradiation current density are adjusted by the two-stage condenser lenses 2 and 3 and the electron beam emitted from the electron gun 1 is formed by a rectangular opening 4 such as a square. . The shaped rectangular primary electron beam is adjusted in magnification by the two irradiation lenses 5 and 6, and further passed through the beam separator 7 and the objective lens 8 to one sub-field in the rectangular field on the sample 9. The field of view is illuminated. The field of view on the sample 9 is divided into, for example, nine sub-fields arranged in the scanning direction of the primary electron beam, and selection of these sub-fields is performed by the electrostatic deflectors 25 and 26. The acquisition of the image data by the irradiation of the primary electron beam and the detection of the secondary electron beam is performed in units of subfields.
In order to prevent the primary electron beam from affecting the secondary electron beam, the path of the primary electron beam is different from the path of the secondary electron beam even after the primary electron beam passes through the beam separator 7. Designed to.

試料９から放出された２次電子は、対物レンズ８に印加された正電圧と試料９に印加された負電圧とにより生成される加速電界で加速及び集束され、細い平行ビームとなってビーム分離器７で図１の左方向に偏向される。そして、ＮＡ開口１０により開口角が制限され、電磁偏向器１１により垂直方向に偏向され、補助レンズ１２により集束されて縮小像を生成する。その後、ウィーンフィルタ１３により軸上色収差及び球面収差が補正され、２段の拡大レンズ１４、１５を介して、ＣＭＯＳイメージセンサ部１６を構成する９個のＣＭＯＳイメージセンサの１つに結像され検出される。これにより、試料上の情報を保持した電気信号が得られる。９個のＣＭＯＳイメージセンサは、３行３列に配置され、静電偏向器２７によって、順次選択される。ＣＭＯＳイメージセンサを９個備えているので、各センサを照射している時間の９倍以内のデータ読み出し時間を必要とするＣＭＯＳイメージセンサであれば、データ読み出しによる時間の無駄を生じない。
光軸から離れた副視野から放出された２次電子ビームは、静電偏向器２８及び２９により、光軸と一致するように偏向される。 Secondary electrons emitted from the sample 9 are accelerated and focused by an accelerating electric field generated by a positive voltage applied to the objective lens 8 and a negative voltage applied to the sample 9 to form a thin parallel beam and beam separation. It is deflected in the left direction in FIG. The aperture angle is limited by the NA aperture 10, deflected in the vertical direction by the electromagnetic deflector 11, and focused by the auxiliary lens 12 to generate a reduced image. Thereafter, axial chromatic aberration and spherical aberration are corrected by the Wien filter 13 and imaged and detected on one of the nine CMOS image sensors constituting the CMOS image sensor unit 16 via the two-stage magnifying lenses 14 and 15. Is done. Thereby, an electric signal holding information on the sample is obtained. Nine CMOS image sensors are arranged in 3 rows and 3 columns, and are sequentially selected by the electrostatic deflector 27. Since nine CMOS image sensors are provided, time is not wasted by data reading if the CMOS image sensor requires a data reading time within nine times the irradiation time of each sensor.
The secondary electron beam emitted from the subfield far from the optical axis is deflected by the electrostatic deflectors 28 and 29 so as to coincide with the optical axis.

図２は、軸上色収差及び球面収差補正用のウィーンフィルタ１３の断面構造（ただし、１／４のみ）を示している。ウィーンフィルタ１３は、以下のようにして製造される。
・電極を構成するパーマロイ板１８〜２０とヨークを構成するパーマロイ円筒１７を準備し、絶縁スペーサ２２にネジ２３で固定する。
・これらパーマロイを熱処理してアニールする。
・補正用の磁場を発生させるためのコイル２１をパーマロイ板１８〜２０に巻回する。
・パーマロイ板１８〜２０及びパーマロイ円筒１７の先端をワイヤカットで高精度に加工する。
・絶縁スペーサ２２のうちの、ビーム照射可能な面、及び、その他の絶縁を保持するのに必要な面を除き、金コーティングを行う。 FIG. 2 shows a cross-sectional structure (only 1/4) of the Wien filter 13 for correcting axial chromatic aberration and spherical aberration. The Wien filter 13 is manufactured as follows.
The permalloy plates 18 to 20 constituting the electrodes and the permalloy cylinder 17 constituting the yoke are prepared and fixed to the insulating spacer 22 with screws 23.
・ Heat-treat and anneal these permalloys.
A coil 21 for generating a correction magnetic field is wound around the permalloy plates 18-20.
The tip of the permalloy plates 18 to 20 and the permalloy cylinder 17 are processed with high precision by wire cutting.
A gold coating is applied except for the surface of the insulating spacer 22 where the beam can be irradiated and other surfaces necessary for maintaining insulation.

軸対称レンズ系の軸上色収差を補正するために、該軸対称レンズ系の軸上色収差とウィーンフィルタ１３の軸上色収差とを、符号が逆で絶対値を等しくする調整する必要がある。これら絶対値を正確に合わせるために、補助レンズ１２の励起電圧を可変とする。そして、ウィーンフィルタ１３の軸上色収差が小さい場合は、補助レンズ１２の励起電圧を調整して、２次電子ビームが図１の点線の軌道を通るようにし、ウィーンフィルタ１３の軸上色収差と軸対称レンズ系の軸上色収差との絶対値を一致させる。
このような構成のウィーンフィルタ１３を用いることにより、対物レンズの軸上色収差係数を大幅に小さくすることができる。また、ウィーンフィルタ１３の長さを短くすることができるので、電子線装置の光路長を比較的短くすることができる。また、ウィーンフィルタ１３の内径を大きくすることができるので、電極間距離を比較的大きくすることができ、よって不要な電極間放電を防止することができる。 In order to correct the axial chromatic aberration of the axially symmetric lens system, it is necessary to adjust the axial chromatic aberration of the axially symmetric lens system and the axial chromatic aberration of the Wien filter 13 so that their absolute values are equal with the opposite signs. In order to accurately match these absolute values, the excitation voltage of the auxiliary lens 12 is made variable. When the axial chromatic aberration of the Wien filter 13 is small, the excitation voltage of the auxiliary lens 12 is adjusted so that the secondary electron beam passes along the dotted line trajectory in FIG. The absolute value is matched with the longitudinal chromatic aberration of the symmetric lens system.
By using the Wien filter 13 having such a configuration, the axial chromatic aberration coefficient of the objective lens can be significantly reduced. Further, since the length of the Wien filter 13 can be shortened, the optical path length of the electron beam apparatus can be relatively shortened. In addition, since the inner diameter of the Wien filter 13 can be increased, the distance between the electrodes can be made relatively large, and unnecessary inter-electrode discharge can be prevented.

なお、対物レンズの軸上色収差係数を大幅に小さくすることができる理由は、以下の通りである。
対物レンズの軸上色収差をウィーンフィルタで補正する場合、ウィーンフィルタにより生成される負の軸上色収差係数Ｃax(wf)と、対物レンズが作る像点での軸上色収差係数Ｃax(image)とは、絶対値が等しく符号を逆にする必要がある。対物レンズの物点（試料上の点）での軸上色収差係数Ｃax(object)は、光学系のZ軸（光軸）方向の寸法が決まれば、ほぼ決定することができる。そして、軸上色収差係数Ｃax(image)は、以下のように表すことができる。
Ｃax(image)
＝Ｍ２（φ(wf)／φ(SE)）３／２Ｃax(object)
ただし、Ｍは物点から像点への拡大率、φ(wf)はウィーンフィルタを通過時の電子ビームのエネルギ、φ(SE)は２次電子の初期エネルギ（試料面でのエネルギ）である。
上記式から明らかなように、拡大率Ｍを小さくするとＣax(image)を小さくすることができ、したがって、ウィーンフィルタによる軸上色収差係数を小さくすることができる。 The reason why the axial chromatic aberration coefficient of the objective lens can be greatly reduced is as follows.
When correcting the axial chromatic aberration of the objective lens with the Wien filter, the negative axial chromatic aberration coefficient Cax (wf) generated by the Wien filter and the axial chromatic aberration coefficient Cax (image) at the image point created by the objective lens are: The absolute values must be equal and the signs must be reversed. The axial chromatic aberration coefficient Cax (object) at the object point (point on the sample) of the objective lens can be almost determined if the dimension of the optical system in the Z-axis (optical axis) direction is determined. The axial chromatic aberration coefficient Cax (image) can be expressed as follows.
Cax (image)
= M 2 (φ (wf) / φ (SE)) 3/2 Cax (object)
Where M is the magnification from the object point to the image point, φ (wf) is the energy of the electron beam when passing through the Wien filter, and φ (SE) is the initial energy of the secondary electrons (energy on the sample surface). .
As is clear from the above equation, if the enlargement ratio M is reduced, the Cax (image) can be reduced, and therefore the axial chromatic aberration coefficient due to the Wien filter can be reduced.

また、ウィーンフィルタを図２に示すように１２極子にすることによって、２極電場、２極磁場、４極電場、４極磁場、６極電場、６極磁場を発生させることができる。そして、２極の電場・磁場によって、ウィーン条件（電子ビームを直進させる条件）を満たし、４極の電場・磁場によって軸上色収差を補正し、６極の電場・磁場によって球面収差を補正することができる。よって、軸上色収差とともに球面収差を補正することができる。   In addition, by using a 12-pole Wien filter as shown in FIG. 2, a dipole electric field, a dipole magnetic field, a quadrupole electric field, a quadrupole magnetic field, a hexapole electric field, and a hexapole magnetic field can be generated. And, the dipole electric field / magnetic field satisfies the Wien condition (conditions for straightening the electron beam), the axial chromatic aberration is corrected by the quadrupole electric field / magnetic field, and the spherical aberration is corrected by the hexapole electric field / magnetic field. Can do. Therefore, spherical aberration as well as longitudinal chromatic aberration can be corrected.

図１に示した電子線装置において、対物レンズ８を静電レンズではなく電磁レンズとしてＭＯＬ動作をさせることにより、副視野の移動時の収差を低減させることもできる。その他、種々の変更が可能である。   In the electron beam apparatus shown in FIG. 1, the aberration during the movement of the subfield can be reduced by performing the MOL operation using the objective lens 8 as an electromagnetic lens instead of an electrostatic lens. Various other changes are possible.

図３は、図１のレンズ８及び１２での収差特性をシミュレーションした結果である。ＮＡ開口値が３１０ｍrad以下の場合、軸上色収差（グラフ３１）が球面収差（グラフ３２）より大きいが、ＮＡ開口値が３１０ｍrad以上では、球面収差の方が大きくなる。軸上色収差のみをウィーンフィルタで補正した場合、収差特性はグラフ３８のようになり、１００ｎｍのボケを得るためには、ＮＡを１９０ｍrad以下にする必要がある。軸上色収差と球面収差の両方を修正した場合、残存収差はグラフ４０のようになり、１００ｎｍのボケを得るためには５９０ｍradまで大きくすることができる。
１９０ｍradでは、ＳＥ（２次電子）の透過率は３．５７％しか得られないのに対して、５９０ｍradでは、３０．９％の透過率が得られ、１０倍近くの透過率が得られる。したがって、写像投影型の電子光学系を用いた電子線装置において、軸上色収差のみではなく、球面収差も補正することにより、性能が大幅に向上することが分かる。
なお、図３において、グラフ３３は５次の球面収差、グラフ３４はコマ収差、３５は３次の軸上色収差、３６は４次の軸上色収差、３７は倍率色収差、３９は軸上色収差のみを補正した場合に１００ｎｍ以下のボケが得られるＮＡ開口値、４１は軸上色収差と球面収差とを補正した場合の１００ｎｍ以下のボケが得られるＮＡ開口値である。 FIG. 3 shows the result of simulating the aberration characteristics of the lenses 8 and 12 shown in FIG. When the NA aperture value is 310 mrad or less, the axial chromatic aberration (graph 31) is larger than the spherical aberration (graph 32), but when the NA aperture value is 310 mrad or more, the spherical aberration becomes larger. When only the axial chromatic aberration is corrected by the Wien filter, the aberration characteristics are as shown in the graph 38. In order to obtain 100 nm blur, the NA needs to be 190 mrad or less. When both axial chromatic aberration and spherical aberration are corrected, the residual aberration is as shown in graph 40, and can be increased to 590 mrad in order to obtain a blur of 100 nm.
At 190 mrad, the SE (secondary electron) transmittance is only 3.57%, whereas at 590 mrad, a transmittance of 30.9% is obtained and a transmittance of about 10 times is obtained. Therefore, it can be seen that in an electron beam apparatus using a projection type electron optical system, performance is greatly improved by correcting not only axial chromatic aberration but also spherical aberration.
In FIG. 3, graph 33 is fifth-order spherical aberration, graph 34 is coma, 35 is third-order axial chromatic aberration, 36 is fourth-order axial chromatic aberration, 37 is lateral chromatic aberration, and 39 is only axial chromatic aberration. NA is an NA aperture value at which a blur of 100 nm or less is obtained, and 41 is an NA aperture value at which a blur of 100 nm or less is obtained when axial chromatic aberration and spherical aberration are corrected.

本発明に係る第１の実施形態の電子線装置における電子光学系を示す説明図である。It is explanatory drawing which shows the electron optical system in the electron beam apparatus of 1st Embodiment which concerns on this invention. 図１に示した電子線装置におけるウィーンフィルタの構成を示す断面図である。It is sectional drawing which shows the structure of the Wien filter in the electron beam apparatus shown in FIG. 拡大光学系における収差特性を示すグラフである。It is a graph which shows the aberration characteristic in an expansion optical system.

Claims (5)

１次電子ビームを試料上に照射し、該照射により試料から放出される電子を検出することにより、試料上の情報を得るようにした電子線装置において、
試料上に長方形の視野で１次電子ビームを照射する１次電子光学系と、
試料から放出された２次電子を写像投影光学系で拡大しかつ面検出器又は線検出器に導く２次電子光学系であって、
試料から放出された２次電子による像を形成する結像手段と、
結像手段の後段に設けられ、拡大像の球面収差を補正するウィーンフィルタと、
ウィーンフィルタと検出器との間に設けられ、ウィーンフィルタを経た電子ビームを拡大する拡大手段と
からなる２次電子光学系と
からなることを特徴とする電子線装置。 In an electron beam apparatus adapted to obtain information on a sample by irradiating the sample with a primary electron beam and detecting electrons emitted from the sample by the irradiation,
A primary electron optical system for irradiating a primary electron beam on a sample with a rectangular field of view;
A secondary electron optical system that expands secondary electrons emitted from the sample with a mapping projection optical system and guides them to a surface detector or a line detector;
An imaging means for forming an image of secondary electrons emitted from the sample;
A Wien filter which is provided at a subsequent stage of the imaging means and corrects spherical aberration of the magnified image;
2. An electron beam apparatus comprising: a secondary electron optical system provided between a Wien filter and a detector and comprising an expanding means for expanding an electron beam that has passed through the Wien filter. 請求項１記載の電子線装置において、結像手段は、２段のレンズからなり、該２段のレンズの内部に電磁偏向器を有するビーム分離器があることを特徴とする電子線装置。 2. The electron beam apparatus according to claim 1, wherein the imaging means comprises a two-stage lens, and a beam separator having an electromagnetic deflector is provided inside the two-stage lens. 請求項１記載の電子線装置において、結像手段は、２段のレンズからなり、該２段のレンズの内の後段のレンズは、焦点距離を調整可能に構成されて、該結像手段の軸上色収差の大きさを可変とし、これにより、該軸上色収差の大きさをウィーンフィルタの軸上色収差の大きさと一致させることを特徴とする電子線装置。 2. The electron beam apparatus according to claim 1, wherein the imaging means comprises two stages of lenses, and the latter stage of the two stages of lenses is configured to be adjustable in focal length, An electron beam apparatus characterized in that the magnitude of axial chromatic aberration is variable, thereby making the magnitude of axial chromatic aberration coincide with the magnitude of axial chromatic aberration of a Wien filter. 請求項１〜３いずれかに記載の電子線装置において、ウィーンフィルタは、複数のパーマロイ板、絶縁スペーサ、励磁コイル、及び円筒形コアからなることを特徴とする電子線装置。 4. The electron beam apparatus according to claim 1, wherein the Wien filter includes a plurality of permalloy plates, insulating spacers, excitation coils, and a cylindrical core. 請求項１〜４いずれかに記載の電子線装置において、１次電子光学系は、長方形の視野を分割した副視野毎に、試料上に１次電子ビームを照射するよう構成され、かつ検出器は、副視野毎に２次電子検出を行うよう構成されていることを特徴とする電子線装置。 5. The electron beam apparatus according to claim 1, wherein the primary electron optical system is configured to irradiate the sample with a primary electron beam for each subfield obtained by dividing the rectangular field. Is an electron beam apparatus configured to perform secondary electron detection for each sub-field of view.
JP2005092273A 2005-03-22 2005-03-28 Electron beam equipment Expired - Fee Related JP4980574B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005092273A JP4980574B2 (en) 2005-03-28 2005-03-28 Electron beam equipment
KR1020077023974A KR20070116260A (en) 2005-03-22 2006-03-22 Electron beam device
TW095109800A TW200700717A (en) 2005-03-22 2006-03-22 Electron beam device
US11/909,409 US20090014649A1 (en) 2005-03-22 2006-03-22 Electron beam apparatus
PCT/JP2006/305688 WO2006101116A1 (en) 2005-03-22 2006-03-22 Electron beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005092273A JP4980574B2 (en) 2005-03-28 2005-03-28 Electron beam equipment

Publications (2)

Publication Number Publication Date
JP2006278027A true JP2006278027A (en) 2006-10-12
JP4980574B2 JP4980574B2 (en) 2012-07-18

Family

ID=37212596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005092273A Expired - Fee Related JP4980574B2 (en) 2005-03-22 2005-03-28 Electron beam equipment

Country Status (1)

Country Link
JP (1) JP4980574B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010519697A (en) * 2007-02-22 2010-06-03 アプライド マテリアルズ イスラエル リミテッド High-throughput SEM tool
JP2015038892A (en) * 2007-02-22 2015-02-26 アプライド マテリアルズ イスラエル リミテッド High throughput sem tool

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004342341A (en) * 2003-05-13 2004-12-02 Hitachi High-Technologies Corp Mirror electron microscope, and pattern defect inspection device using it
JP2004354091A (en) * 2003-05-27 2004-12-16 Toshiba Corp Substrate inspection apparatus, substrate inspection method, and manufacturing method of semiconductor device
JP2004363085A (en) * 2003-05-09 2004-12-24 Ebara Corp Inspection apparatus by charged particle beam and method for manufacturing device using inspection apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004363085A (en) * 2003-05-09 2004-12-24 Ebara Corp Inspection apparatus by charged particle beam and method for manufacturing device using inspection apparatus
JP2004342341A (en) * 2003-05-13 2004-12-02 Hitachi High-Technologies Corp Mirror electron microscope, and pattern defect inspection device using it
JP2004354091A (en) * 2003-05-27 2004-12-16 Toshiba Corp Substrate inspection apparatus, substrate inspection method, and manufacturing method of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010519697A (en) * 2007-02-22 2010-06-03 アプライド マテリアルズ イスラエル リミテッド High-throughput SEM tool
JP2015038892A (en) * 2007-02-22 2015-02-26 アプライド マテリアルズ イスラエル リミテッド High throughput sem tool
US9153413B2 (en) 2007-02-22 2015-10-06 Applied Materials Israel, Ltd. Multi-beam scanning electron beam device and methods of using the same

Also Published As

Publication number Publication date
JP4980574B2 (en) 2012-07-18

Similar Documents

Publication Publication Date Title
JP6554288B2 (en) Charged particle beam equipment
US8378299B2 (en) Twin beam charged particle column and method of operating thereof
US20090014649A1 (en) Electron beam apparatus
CN102064074B (en) For the adjuster of the axial aberration of particle-optical lens
US8178850B2 (en) Chromatic aberration corrector for charged-particle beam system and correction method therefor
US8884245B2 (en) Corrector for the correction of chromatic aberrations in a particle-optical apparatus
JP2006216396A (en) Charged particle beam device
WO2017018432A1 (en) Charged particle beam device
JPH0536371A (en) Corpuscular ray device
EP0868739A1 (en) Correction device for correcting chromatic aberration in particle-optical apparatus
JP2023110072A (en) Scanning electron microscope and secondary electron detection method for scanning electron microscope
EP2355125B1 (en) Particle beam device and method for operation of a particle beam device
JP6802628B2 (en) High resolution charged particle beam device and how to operate the device
JP4980574B2 (en) Electron beam equipment
JP2007287495A (en) 2-lens optical system scanning type aberration corrected focused ion beam device, 3-lens optical system scanning type aberration corrected focused ion beam device, and 2-lens optical system projection type aberration corrected ion lithography device as well as 3-lens optical system projection type aberration corrected ion lithography device
US10096447B1 (en) Electron beam apparatus with high resolutions
JP7240525B2 (en) Charged particle beam device and aberration correction method
JP6737539B2 (en) Charged particle beam device
JP2006278069A (en) Wien filter type energy analyzer and discharge electron microscope
JP2006277996A (en) Electron beam device and device manufacturing method using it
JP6261228B2 (en) Focused ion beam apparatus, focused ion / electron beam processing observation apparatus, and sample processing method
Lutsch et al. Initial resolution measurements of miniaturized electrostatic lenses for LVSEM
JP4931359B2 (en) Electron beam equipment
JP2011040256A (en) Scanning charged particle beam device
JP2006120436A (en) Electron beam apparatus and device manufacturing method using the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081225

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20081225

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20081225

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20111019

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111025

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111220

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20120130

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120321

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120419

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150427

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4980574

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees