JP2006277976A - Washing device, substrate washing device of liquid crystal display and liquid crystal display mounting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To efficiently wash only an attachment area of an anisotropic conductive film of a glass substrate of a liquid crystal display. <P>SOLUTION: Plasma is emitted from a front opening end 4a of a highly-heat-resistant insulator 4 formed of ceramics. A nearly-cylindrical metallic outer conductor 2 having a narrowed tip forms an outer shell part of a coaxial cavity R. All of the outer conductor 2, the insulator 4 and a metallic plasma material gas introduction tube 1 are each formed into a tubular shape and arranged so as to be coaxial with one another. The outer conductor 2 and the plasma material gas introduction tube 1 are electrically connected to each other in the vicinity of a movable mechanism 6. An introduction opening 1a of the plasma material gas introduction tube 1 is arranged at the end of this substrate washing device 10, and a gas jetting opening 1b of the plasma material gas introduction tube 1 is arranged on the side opposite to it. A metallic projection part 5 is arranged in the further front part of the gas jetting opening 1b and an electric field is allowed to be easily concentrated thereat. A substrate of a washing object is mounted in front of the front opening end. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a cleaning device for removing impurities such as organic substances attached to the surface of an object, a substrate cleaning device for a liquid crystal display, and a liquid crystal display assembling device. In particular, the portion of the liquid crystal display substrate to which the anisotropic conductive film (hereinafter referred to as “ACF”) is attached is cleaned before attaching the ACF, thereby improving the degree of adhesion of the ACF to the substrate. Relates to the device.

  As disclosed in Patent Documents 1 and 2 below, ACF is used to connect a terminal portion on a glass substrate of a liquid crystal display and an external device. Before the ACF is attached to the glass substrate, the glass substrate is cleaned with plasma in order to improve the bonding force of the ACF to the glass substrate.

Japanese Patent Laid-Open No. 3-228029 JP 2004-102271 A

  However, the plasma generator used in this apparatus has a low plasma generation density and a high plasma temperature, and thus cannot be said to have a high cleaning power. Some liquid crystal displays use a polarizing film, but there is a problem that the film is damaged when the plasma temperature is high. For this reason, it has been difficult to use as a substrate for small liquid crystal display devices such as mobile phones.

  The present invention has been made to solve the above-mentioned problems. In the substrate of the liquid crystal display, only the area where the ACF is applied is effectively cleaned, and the other areas are affected by thermal influences or plasma. It is an object of the present invention to provide a substrate cleaning device for a small liquid crystal display device capable of locally irradiating low-temperature and high-density plasma that is not affected by irradiation.

In order to solve the above-mentioned problem, a first means is a cleaning device that removes an adsorbate of an object, and is made of a hollow cylindrical metal that forms an outer shell portion of a cylindrical cavity that guides microwaves. An outer conductor, a cylindrical high heat-resistant insulator coaxial with the outer conductor, substantially entirely or at least partially disposed inside the outer conductor, and a portion disposed inside the insulator, A cylindrical metal plasma material gas introduction pipe coaxial with the outer conductor, and disposed inside the outer conductor and on the outer periphery of the insulator, and radiates microwaves to the cavity, coaxial with the outer conductor. A coaxially coupled antenna having a loop, and a metal discharge antenna disposed inside the insulator and in front of the gas outlet of the plasma material gas introduction pipe, facing the front opening end of the insulator Is output from the front open end of the insulator to the object Plasma is a cleaning apparatus which is characterized in that so as to irradiate the.
The second means is characterized in that, in the first means, the adsorbate is an organic substance. The third means is characterized in that, in the first or second means, the object is a glass substrate.
The apparatus of the above invention can be used to remove impurities such as organic substances attached to an object.
A fourth means is a substrate cleaning device for a liquid crystal display device, and includes a hollow cylindrical metal outer conductor that forms an outer shell portion of a cylindrical cavity that guides microwaves, and a substantially entire or A cylindrical high-heat-resistant insulator coaxial with the outer conductor, at least partly disposed within the outer conductor, and an outer conductor partially disposed within the insulator and electrically connected to the outer conductor; A coaxial cylindrical metal plasma material gas introduction tube, a coaxially coupled antenna having a loop coaxial with the outer conductor, disposed inside the outer conductor and on the outer periphery of the insulator, and radiates microwaves to the cavity; A metal discharge antenna disposed inside the insulator and in front of the gas outlet of the plasma material gas introduction pipe, and before the anisotropic conductive film is attached to the substrate, the front opening end of the insulator The front opening end of the insulator on the substrate arranged to face A substrate cleaning apparatus of a liquid crystal display device is characterized in that so as to irradiate the plasma to be et output.
The present invention is an apparatus for cleaning a substrate by converting the gas introduced from the plasma gas introduction tube into plasma by discharge generated in the discharge antenna and irradiating the substrate with plasma from the front opening end of the insulator.

However, as the high heat resistance insulator, for example, quartz, quartz glass, ceramics, or the like can be used.
Hereinafter, in the present specification, the side from which the plasma is emitted is the front of the substrate cleaning apparatus of the present invention. Therefore, the introduction port into which the plasma material gas is introduced in the plasma material gas introduction pipe is located behind the substrate cleaning apparatus of the present invention.

  According to a fifth means of the present invention, in the fourth means, the front portion of the outer conductor is formed from a substantially frustoconical side wall portion having a through-hole on the shaft for penetrating the insulator. It is to be.

According to a sixth means of the present invention, in the fourth or fifth means, the loop of the coaxially coupled antenna is arranged on a bisector of the total axial length of the cavity. is there. However, this trisection point is the internal division point of the full length.
Although there are two internal dividing points, the above-described coaxially-coupled antenna loop may be disposed on either one, or the above-described coaxially-coupled antennas may be disposed on both bisectors. However, when the above coaxially coupled antennas are arranged on both halves, a delay circuit is required because the phases of both microwaves must be shifted by π / 2. Therefore, it is desirable to provide the above coaxially coupled antenna in one place in terms of simplification of structure, size reduction, and weight reduction.

  According to a seventh means of the present invention, in any one of the fourth to sixth means described above, a protrusion protruding in a direction of emitting plasma is provided on the discharge antenna, and the protrusion is provided on the discharge antenna. It is to arrange on the axis of the insulator.

An eighth means of the present invention is the substrate cleaning apparatus according to any one of the fourth to seventh means, wherein the discharge antenna is a spiral filament.
According to a ninth means of the present invention, in any one of the fourth to eighth means, the discharge antenna is made of tungsten mixed with thorium.

  According to a tenth means of the present invention, in any one of the fourth to ninth means, the coaxial coupling antenna is fed with a coaxial cable.

  According to an eleventh means of the present invention, in any one of the above fourth to tenth means, the plasma material gas introduction pipe is provided with a variable mechanism whose axial position can be adjusted. is there.

According to a twelfth means of the present invention, there is provided a liquid crystal display assembling apparatus for assembling a semiconductor element for driving a liquid crystal element or a liquid crystal display having an FPC on an anisotropic conductive film. A liquid crystal display assembling apparatus comprising a cleaning device according to any one of eleventh means.
The present invention is a liquid crystal display assembling apparatus characterized by having the above-described substrate cleaning apparatus.

The thirteenth means of the present invention is characterized in that the substrate facing the front opening end of the cleaning apparatus is moved with respect to the front opening end, and cleaning with plasma is performed in the substrate transfer process. A liquid crystal display assembling device of the twelfth means.
The present invention is a liquid crystal display assembling apparatus characterized in that the substrate is washed in the process of transporting the substrate of the liquid crystal display to the step of attaching the ACF.
In all the above inventions, atmospheric pressure is desirable, but it may be reduced pressure or pressurized, and the atmospheric pressure is about 0.5 to 2 atmospheres.

The effects obtained by the above-described means of the present invention are as follows.
That is, according to the first to fourth means of the present invention, a high electric field is generated in the cavity by the microwave, and the electric field is concentrated on the discharge antenna. The plasma material gas is efficiently in a plasma state. At this time, if the inside of the plasma material gas introduction tube and the above-mentioned insulator tube is at substantially atmospheric pressure, the plasma material gas injection flow is optimized so that a plasma gas with good purity is placed in front of the apparatus. Can be released. Since the coaxially coupled antenna is used, microwaves can be supplied to the coaxially coupled antenna using a coaxial cable without using a waveguide, so that the apparatus can be made compact. The plasma irradiation pattern can be controlled by changing the shape of the front opening end of the insulator. As a result, by increasing the gas flow rate, the plasma generation density can be increased, and the plasma temperature can be decreased (first to fourth means). Therefore, it is possible to irradiate plasma only on the area where the ACF is pasted on the substrate of the liquid crystal display without affecting other areas (first means). Further, the front opening end of the insulator may be cooled.

  Further, according to the fifth means of the present invention, the electric field is concentrated well in the vicinity of the through hole, so that the electric field is more efficiently concentrated on the discharge antenna. For this reason, the electric power consumed for plasma generation can be suppressed.

  Further, according to the sixth means of the present invention, it is possible to efficiently supply the microwave to the discharge antenna while ensuring a short overall length of the axial device. Therefore, according to the sixth means of the present invention, both miniaturization and power saving of the apparatus can be rationally achieved. Since the substrate cleaning apparatus is downsized, it is possible to supply plasma only to the ACF attachment region of the substrate.

  Further, according to the seventh means of the present invention, since the direction in which the plasma is generated coincides with the direction in which the plasma should be emitted, the generated plasma is immediately emitted while eliminating waste such as extinction and attenuation of the plasma as much as possible. can do. According to the eighth means, since the discharge antenna is a spiral filament, it is possible to easily generate plasma by concentrating microwaves on this portion. According to the ninth means, since the discharge antenna is made of tungsten mixed with thorium, electrons are easily emitted by heating with microwaves, so that plasma can be easily generated in this portion. . According to the fourth to ninth means described above, the plasma generation density can be improved and the plasma temperature can be lowered by the configuration.

The coaxial cable is flexible and can be bundled in a small size, and is easy to handle. Therefore, according to the tenth means of the present invention, it is possible to input a microwave to the apparatus through a coaxial cable, which is easy to handle and far more than the case of introducing the microwave through a waveguide or the like. A compact apparatus can be configured. A microwave can be easily supplied to the cavity by the coaxially coupled antenna.
Further, if an N-type coaxial connector or the like is used, it is easy to attach and detach, and furthermore, these parts are standardized or commercially available, so that the design and manufacture of the apparatus are simplified.

According to the eleventh means of the present invention, the reflectance of the microwave to the cavity of the coaxially coupled antenna can be minimized by adjusting the position of the plasma material gas introduction tube in the axial direction. it can.
Usually, the optimum conditions for impedance matching between the cavity and the coaxially coupled antenna differ depending on whether plasma is generated or not. However, if the above variable mechanism is used as needed, impedance matching can be easily optimized, so that it is possible to always realize a substrate cleaning apparatus with high power use efficiency.

  In the twelfth and thirteenth means, the liquid crystal display assembling apparatus is provided with the cleaning devices of the first to eighth means. Immediately before the ACF is attached to the substrate, only the ACF application region of the substrate can be highly cleaned, and the ACF can be firmly bonded to the substrate, so that the reliability of the product can be improved.

The object to be cleaned is arbitrary, for example, a glass substrate. The impurities adsorbed on the object are arbitrary, for example, organic substances. In particular, the present invention is effective for cleaning a substrate (for example, a glass substrate) of a liquid crystal display.
Since the present invention generates plasma near the front opening end of the insulator and irradiates the plasma on the substrate of the liquid crystal display disposed near the opening at the opening end, no other large plasma generation region is necessary. The shape of the opening may be formed in accordance with the cleaning region of the substrate. In order to clean the rectangular region while transporting the substrate, the opening is preferably formed in a linear shape (slit shape). Of course, it may be circular. Stainless steel, molybdenum, tantalum, nickel, copper, tungsten, or alloys thereof can be used for the discharge antenna and the plasma gas introduction tube. The length of the front opening end of the insulator is preferably about 20 to 50 mm in the gas flow path direction. When the opening is linear, the shape can be smoothly changed from a circular shape to a linear shape. As a gas for generating plasma, air, oxygen, for example, He, Ne, Ar or other rare gas, nitrogen, hydrogen, or the like can be used at atmospheric pressure. By using air or oxygen, active oxygen radicals can be obtained, and organic contaminants can be effectively cleaned. Moreover, it is economical if air is used. For example, when Ar, which is a rare gas, is used, when Ar plasma is irradiated onto the substrate, surrounding oxygen molecules become oxygen radicals by Ar plasma. This oxygen radical can effectively remove organic contaminants adhering to the substrate of the liquid crystal display. Moreover, since it is not used as gas other than Ar gas, it is also economical. For the above reasons, a mixed gas of air and Ar may be used. Similarly, since oxygen radicals are generated, organic contaminants adhering to the substrate can be effectively removed. The gas flow rate, supply amount, or degree of vacuum can be set arbitrarily.

  The distance between the front opening end of the insulator and the substrate is also related to the gas flow velocity, but is preferably in the range of 2 mm to 20 mm. More desirably, it is 3 mm to 12 mm, and most desirably 4 mm to 8 mm. In short, it is preferable to set the distance so that the density of oxygen radicals is the highest and the electron density is the lowest on the surface of the substrate. This prevents charge-up damage to the substrate and enables the most efficient cleaning. Furthermore, it is preferable to irradiate the plasma from an oblique direction with respect to the substrate. By irradiating the plasma from an oblique direction, the polarizing film or the liquid crystal sealant is irradiated with the plasma, and adverse effects on the product can be prevented. In addition, by blowing a gas such as air to the area where you do not want to irradiate the plasma on the substrate so that the plasma is not diffused, only the portion of the substrate where the ACF is applied is irradiated with plasma. Thus, only this part can be cleaned.

  For preventing oxidation of the electrode, nitrogen, Ar, or a gas containing hydrogen having a reducing action may be used. Further, by generating a plurality of types of plasma, it is possible to remove only organic contaminants and not react with other regions. In addition, it is desirable to suck the gas after the reaction from a portion irradiated with plasma to the substrate. This prevents molecules that have reacted with organic contaminants from adhering to other areas. Furthermore, the temperature and density of the plasma are measured using laser light absorption spectroscopy, etc., and the applied voltage magnitude, pulse application, duty ratio, irradiation time, gas, etc. so that the predetermined temperature and density are obtained. It is desirable to feedback control the flow rate. Thereby, it is possible to realize high-quality cleaning and shortening of the cleaning time. In addition, assuming that the shape of the opening at the front opening end of the insulator is linear, the width and length of the opening are set appropriately to irradiate the plasma only to the portion where the ACF is pasted on the substrate. Is possible. Further, in the process of transporting the substrate to the apparatus for attaching the ACF on the substrate, the manufacturing time can be shortened by irradiating the substrate with plasma during transport. Furthermore, it is desirable to cool the gas and supply it to the apparatus to turn it into plasma. As a result, the temperature of the plasma is prevented from rising, and the influence on the liquid crystal display device, for example, damage to the polarizing film can be prevented. Since this substrate cleaning apparatus is composed of a cylindrical body portion through which gas passes and an opening end provided at the tip thereof, it can be very small, and the gas supply direction and the plasma blowing direction, The shape of the blowout plasma can be arbitrarily designed. Therefore, it is possible to provide a plurality of openings through which these plasmas are blown, and to supply gas from any direction. Therefore, it is possible to irradiate plasma only on the ACF-attached portion of the substrate with high density, and the cleaning device is effectively attached even in a vacant narrow space of the liquid crystal display assembling apparatus. It becomes possible. The pressure is preferably atmospheric pressure, and it is desirable to form atmospheric pressure plasma.

Hereinafter, the present invention will be described based on specific examples.
However, the embodiments of the present invention are not limited to the following examples.

In this embodiment, the object to be cleaned is an example used for cleaning a substrate (for example, a glass substrate) of a liquid crystal display. The adsorbing substance is arbitrary, but is, for example, an organic substance.
FIG. 1A is a sectional view on the axis of the substrate cleaning apparatus 10 according to the first embodiment. The substrate cleaning apparatus 10 emits plasma from the front opening end 4a of the high heat resistance insulator 4 made of ceramics. A substantially cylindrical metal outer conductor 2 with a narrowed tip forms an outer shell portion of the coaxial cavity R. The outer conductor 2, the insulator 4, and the metal plasma material gas introduction pipe 1 are all formed in a cylindrical shape so as to be coaxial with each other, and the insulator 4 and the plasma material gas are disposed around this axis. The introduction pipe 1 is located. The outer conductor 2 and the plasma material gas introduction pipe 1 are electrically connected (conductive) in the vicinity of the variable mechanism 6.

  The introduction port 1a of the plasma material gas introduction tube 1 is arranged at the rearmost part of the substrate cleaning apparatus 10, while the gas outlet 1b of the plasma material gas introduction tube 1 is arranged on the opposite side. A metallic discharge antenna 5 is disposed further in front of the gas outlet 1b. That is, the discharge antenna 5 is fixed to the inner wall of the insulator 4 and is arranged coaxially with the shaft in the insulator 4. The discharge antenna 5 is formed in a ring shape whose peripheral portion is joined to the inner wall of the insulator 4, and has a projection 51 whose central axis protrudes toward the plasma emission side. In the vicinity of the discharge antenna 5, the plasma material gas introduction tube 1 is not provided in the outer direction with respect to the axis, and the following truncated cone-shaped side wall portion 2 a is provided. With this arrangement, the electric field tends to concentrate on the discharge antenna 5. FIG. 1B shows a front view of the discharge antenna 5.

The front portion of the outer conductor 2 is formed from a substantially truncated cone side wall portion 2 a having a through-hole through which the insulator 4 penetrates on the axis. The structure in which the vicinity of the through hole of the side wall 2a is narrowed forward also contributes to concentrating the generated electric field on the discharge antenna 5.
The front end of the coaxially coupled antenna 3 has a loop shape as shown in FIG. The insulator 4 passes through the loop, and at the same time, the plasma material gas introduction pipe 1 passes through the loop.

  The variable mechanism 6 that adjusts the position of the plasma material gas introduction pipe 1 is formed by using a fixing bracket or the like. The variable mechanism 6 allows the plasma material gas introduction pipe 1 to be attached to the inner wall surface of the insulator 4. Guided, the position can be changed in the axial direction (ie in the front-rear direction). The N-type coaxial connector 7 provides an electrical connection interface for connecting a coaxial cable (not shown). This coaxial cable is used to feed microwaves, whereby high-frequency power input from the N-type coaxial connector 7 is transmitted to the coaxially coupled antenna 3. The coaxially coupled antenna 3 radiates microwaves having a predetermined frequency to the coaxial cavity R based on this feeding. At this time, the microwave generates a high electric field in the coaxial cavity R.

  The plasma material gas flowing in from the inlet 1a of the plasma material gas introduction tube 1 passes through the gap s of the discharge antenna 5 and reaches the vicinity of the protrusion tip t of the discharge antenna 5. Since the electric field concentrates in the vicinity of the projection tip t, the plasma material gas can be ionized by this. The ionized state is plasma, which is emitted from the front opening end 4a in accordance with the inflow speed of the plasma material gas.

The above-described coaxially coupled antenna 3 is disposed on a bisector of the entire length (axial length) of the coaxial cavity R. The total length of the coaxial cavity R is set to 3/4 of the above-mentioned microwave guide wavelength λ.
The outer diameter D of the outer conductor 2 and the outer diameter d of the plasma material gas introduction pipe 1 may be, for example, about D = 30 mm and d = 3.2 mm, respectively.
As the plasma material gas, for example, commonly used gases such as air, argon (Ar), oxygen (O ₂ ), hydrogen (H ₂ ), and nitrogen can be used. In the case of the substrate cleaning apparatus 10, the gas flow rate is suitably about 0.1 to 10 liters / minute.
Further, the power supplied to the coaxially coupled antenna 3 may be about 100 W.

  According to the above configuration, a very compact substrate cleaning apparatus 10 having a total length of about 100 mm can be configured. Such a substrate cleaning apparatus is much smaller and lighter than conventional ones, and thus handling thereof is much easier than before.

  Further, the reflectivity of the microwave with respect to the coaxial cavity R of the coaxially coupled antenna 3 can be minimized by the variable mechanism 6 that adjusts the position of the plasma material gas introduction pipe 1. Normally, the optimum conditions for impedance matching between the cavity and the coaxially coupled antenna differ depending on whether plasma is generated or not. However, if the variable mechanism 6 is used, the optimum impedance matching can be easily performed. Can be achieved.

  The discharge antenna 5 may be made of a metal material that easily emits electrons. In particular, the discharge antenna 5 is preferably made of tungsten mixed with thorium. 1A is disposed at the position where the discharge antenna shown in FIG. 1A is disposed (at the tip of the introduction tube 1 and inside the insulator 4), as shown in FIG. May be provided. The filament 52 is tungsten mixed with thorium. With this configuration, the filament 52 is heated by microwaves, and electrons can be effectively emitted, and plasma can be easily generated at this portion.

  As shown in FIG. 3, the cleaning apparatus 1 is arranged so that the linear opening 101 of the substrate cleaning apparatus 1 described above faces the glass substrate 40 of the liquid crystal display, which is the object to be cleaned. At this time, the tip of the insulator 4 changes from a cylindrical shape to a prismatic shape, and a linear (slit-shaped) opening 101 is obtained. If the glass substrate 40 is moved in the x-axis direction, the surface of the glass substrate 40 is cleaned along the −x-axis direction with a width W substantially equal to the width of the opening 101 on the surface of the glass substrate 40. The distance H between the opening 101 and the surface of the glass substrate 40 may be set to a distance at which the plasma flow is irradiated on the surface of the glass substrate 40, and the maximum distance that can be cleaned varies depending on the gas supply rate. .

  Next, the distance between the opening 101 of the substrate cleaning apparatus 1 and the surface of the glass substrate 40 was set to 5.5 mm, and the relationship between the plasma irradiation time on the glass substrate 40 and the effect of surface cleaning was measured. The effect of the surface cleaning is that a certain amount of water is dropped on the surface of the glass substrate 40 to form water droplets on the surface, and the contact angle of the water droplets (the tangential plane of the water droplet surface and the substrate surface at the contact point with the substrate) The angle formed by The results are shown in the table of FIG. 4 and the graph of FIG. The irradiation time of 0 hour is a value when the plasma is not cleaned, and the irradiation time of 0.0784 sec is when the plasma is irradiated while moving the glass substrate 40 in the x-axis direction at a speed of 38.265 mm / sec. This corresponds to the irradiation time per 3 mm width of the opening 101. As is apparent from this graph, even if the glass substrate 40 is cleaned while being transported at 38.265 mm / sec, the contact angle is 24 degrees, and the glass substrate 40 is reduced to about 1/3 of the case when it is not cleaned. It is understood that is obtained. When the plasma irradiation time is 30 seconds, the contact angle of the water droplet is 5 degrees, and it can be seen that an extremely high cleaning effect is obtained.

  In order to enhance the cleaning effect when the glass substrate 40 is cleaned while being transported at 38.265 mm / sec, if the substrate cleaning apparatus 1 is provided at 10 locations along the glass substrate transport line, the plasma irradiation time is increased. Is about 0.8 sec, and a cleaning degree with a contact angle of 18 degrees of water droplets is obtained.

  FIG. 6 shows the configuration of the liquid crystal display assembling apparatus including the cleaning of the glass substrate 40. The glass substrate 40 is supplied to the transfer device 51 by the glass substrate supply device 50. The glass substrate 40 supplied to the transfer device 51 passes directly under the substrate cleaning device 1 and is supplied to the ACF sticking device 52, and further, the IC chip is pressure-bonded to the ACF by the component bonding device 53. Thereafter, other components are also assembled on the glass substrate 40 to form a liquid crystal display. The liquid crystal display assembling apparatus has such a configuration.

  In addition, as shown in FIG. 3, in the region S where the plasma is not irradiated, there are components that the plasma does not want to be irradiated, such as a polarizing film and a bonding agent (not shown) between the substrates. In order to ensure that this region S is not irradiated with plasma, the substrate cleaning apparatus 1 is tilted toward the region S, and the angle formed between the opening 101 and the surface of the glass substrate 40 is, for example, 45. Degree. In this way, the plasma is irradiated from the direction inclined by 45 degrees toward the region S with respect to the glass substrate 40, and the plasma irradiation to the region S can be eliminated. Further, if nitrogen gas is blown onto the region S by another device, the region S is prevented from being irradiated with plasma. Further, in order to suck the gas obtained by reacting the plasma and the organic contaminants adhering to the glass substrate 40, another suction device may be provided in the vicinity of the plasma spraying position.

  The present invention can be used in a cleaning apparatus for removing impurities attached to an object. In particular, it is effective when used for cleaning an area where an anisotropic conductive film is pasted on a glass substrate of a liquid crystal display.

Sectional drawing on the axis | shaft of the board | substrate cleaning apparatus 10 of Example 1. FIG. Front view of discharge antenna 5 provided in substrate cleaning apparatus 10 Front view of coaxial coupling antenna 3 provided in substrate cleaning apparatus 10 Sectional drawing on the axis | shaft of the board | substrate cleaning apparatus 10 which concerns on another Example. Configuration diagram of a discharge antenna showing another example Explanatory drawing which showed the washing | cleaning method by the washing | cleaning apparatus which concerns on one specific Example of this invention. The table | surface which showed the relationship between the cleaning time which shows the cleaning effect of the glass substrate wash | cleaned by this washing | cleaning apparatus, and the contact angle of a water droplet. The figure which showed the relationship between the cleaning time which shows the cleaning effect of the glass substrate wash | cleaned by this washing | cleaning apparatus, and the contact angle of a water droplet with a graph. The block diagram which showed the structure of the liquid crystal display assembly | attachment apparatus which concerns on one Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10: Board | substrate washing | cleaning apparatus 1: Plasma material gas introduction pipe 1a: Inlet 1b: Gas blowout port 2: Outer conductor 2a: Side wall part of substantially truncated cone shape (front part of outer conductor 2)
3: Coaxial coupling antenna 4: Insulator 4a: Front opening end 5: Discharge antenna 6: Variable mechanism 7: N-type coaxial connector R: Coaxial cavity 40: Glass substrate 51: Projection 52: Discharge antenna 101: Opening

Claims (13)

A cleaning device that removes the adsorbed matter of an object, a hollow cylindrical metal outer conductor that forms an outer shell of a cylindrical cavity that guides microwaves, and
A substantially heat-resistant insulator having a cylindrical shape coaxial with the outer conductor, substantially entirely or at least partially disposed inside the outer conductor;
A cylindrical metal plasma material gas introduction pipe coaxial with the outer conductor, a part of which is disposed inside the insulator and is electrically connected to the outer conductor;
A coaxial coupling antenna having a loop coaxial with the outer conductor, disposed inside the outer conductor and on the outer periphery of the insulator, and radiates the microwave to the cavity;
A metal discharge antenna disposed inside the insulator and in front of the gas outlet of the plasma material gas introduction pipe;
A cleaning apparatus, wherein the object arranged to face the front opening end of the insulator is irradiated with plasma output from the front opening end of the insulator. The cleaning apparatus according to claim 1, wherein the adsorbent is an organic substance. The cleaning apparatus according to claim 1, wherein the object is a glass substrate. A device for cleaning a substrate of a liquid crystal display device,
A hollow cylindrical metal outer conductor that forms an outer shell of a cylindrical cavity that guides microwaves; and
A substantially heat-resistant insulator having a cylindrical shape coaxial with the outer conductor, substantially entirely or at least partially disposed inside the outer conductor;
A cylindrical metal plasma material gas introduction pipe coaxial with the outer conductor, a part of which is disposed inside the insulator and is electrically connected to the outer conductor;
A coaxial coupling antenna having a loop coaxial with the outer conductor, disposed inside the outer conductor and on the outer periphery of the insulator, and radiates the microwave to the cavity;
A metal discharge antenna disposed inside the insulator and in front of the gas outlet of the plasma material gas introduction pipe;
Before sticking the anisotropic conductive film to the substrate, the substrate disposed to face the front opening end of the insulator is irradiated with plasma output from the front opening end of the insulator. A substrate cleaning apparatus for a liquid crystal display device, characterized in that it is configured as described above. 5. The substrate cleaning apparatus for a liquid crystal display device according to claim 4, wherein a front portion of the outer conductor is formed from a substantially truncated cone side wall portion having a through-hole through which the insulator penetrates on an axis. 6. The substrate cleaning apparatus for a liquid crystal display device according to claim 4, wherein the loop of the coaxially coupled antenna is disposed on a bisector of the total axial length of the cavity. 7. The discharge antenna according to claim 4, wherein the discharge antenna has a protrusion protruding in a direction of emitting the plasma, and the protrusion is disposed on an axis of the insulator. A substrate cleaning apparatus for a liquid crystal display device according to the description. 8. The substrate cleaning apparatus for a liquid crystal display device according to claim 4, wherein the discharge antenna is a spiral filament. 9. The apparatus for cleaning a substrate of a liquid crystal display device according to claim 4, wherein the discharge antenna is made of tungsten mixed with thorium. 10. The substrate cleaning apparatus for a liquid crystal display device according to claim 4, wherein the coaxially coupled antenna is fed by a coaxial cable. 11. 11. The substrate cleaning apparatus for a liquid crystal display device according to claim 4, wherein the plasma material gas introduction pipe has a variable mechanism capable of adjusting a position in an axial direction. The liquid crystal display assembling apparatus for assembling a semiconductor element for driving a liquid crystal element or a liquid crystal display for disposing an FPC on an anisotropic conductive film, and the cleaning according to any one of claims 4 to 11. A liquid crystal display assembling apparatus including the apparatus. The liquid crystal display according to claim 12, wherein the substrate facing the front opening end of the cleaning apparatus is moved with respect to the front opening end, and cleaning with plasma is performed in the process of transporting the substrate. It is a device assembly device.

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