JP2006259486A - Inspecting method and device, and manufacturing method, for matrix structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inspecting method, an inspecting device, and a manufacturing method for a matrix structure that make it possible to easily detect a dotted defect due to a characteristic defect etc., of a switching element etc., of the matrix structure. <P>SOLUTION: Disclosed is the inspecting method for the matrix structure having a structure wherein a plurality of gate lines arranged along an X axis and a plurality of data lines arranged along a Y axis intersect in a grating shape, switching elements arranged at intersections, and driving elements driven with signals flowing through the switching elements, the inspecting method being characterized in that each gate line is supplied with a signal controlling the opening/closing state of a switching element and a signal for inspection which is a signal having nearly the same frequency as and a narrower pulse width d2 than a scanning signal applied to the gate line in normal operation of the matrix structure is applied to the gate line. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a matrix structure inspection method, a matrix structure inspection apparatus, and a matrix structure manufacturing method.

TFT liquid crystal display devices that control the display of each pixel area of a liquid crystal display device using thin film transistors (TFTs) are applied to flat-screen TVs, personal computer monitors, PDAs (Personal Digital Assistants), mobile phones, etc. The market is expanding rapidly. Conventionally, in a manufacturing process of a display device such as a TFT liquid crystal display device, there has been a method of inspecting display defects such as pixel defects and luminance unevenness using a test probe. In addition, a method has been devised in which a scanning signal in a liquid crystal display device has an on period or an off period that is longer than that in normal display to inspect a pixel electrode portion for charging failure or leakage failure (for example, Patent Document 1). reference).
JP-A-9-292428

  However, in the conventional inspection method described in Patent Document 1, since the on period or the off period of the scanning signal is inspected longer than that during normal display, the period of the scanning signal during inspection is the period during normal display. It will be longer. As a result, in the conventional inspection method, the inspection time becomes long and the manufacturing cost increases. For example, in the conventional inspection method, the OFF period of the scanning signal is doubled during normal display. Then, the amount of leakage in the switching transistor is twice that in normal display, and detection of a leakage defect is facilitated, but the inspection time takes a long time.

  Further, in the conventional inspection method described in Patent Document 1, the period of the scanning signal at the time of inspection is longer than the period at the time of normal display, and the operation of the inspection object (such as a switching element) is performed at the time of inspection and at the time of normal display. There is also a problem in that the state is greatly different and the improvement in defect detection accuracy is hindered.

The present invention has been made in view of the above circumstances, and has a matrix structure inspection method, a matrix structure inspection apparatus, and a matrix structure inspection device that can easily detect point-like defects caused by characteristic defects such as switching elements in the matrix structure. An object is to provide a method for manufacturing a matrix structure.
In addition, the present invention provides a matrix structure inspection method, a matrix structure inspection apparatus, and a matrix capable of detecting a point-like defect caused by a characteristic defect such as a switching element in a matrix structure with high accuracy and low cost. An object is to provide a method for manufacturing a structure.

In order to achieve the above object, a matrix structure inspection method according to the present invention includes a structure in which a plurality of gate lines arranged in the X-axis direction and a plurality of data lines arranged in the Y-axis direction intersect with each other. A method of inspecting a matrix structure having a switching element arranged at the intersection and a pixel electrode arranged corresponding to the switching element, wherein the gate line is a conduction state of the switching element And a test signal having a frequency substantially the same as that of the scanning signal applied to the gate line during normal operation in the matrix structure and a narrow pulse width. , Applied to the gate line.
According to the present invention, since the pulse width of the inspection signal is narrower than the pulse width of the scanning signal during normal operation, for example, a sufficiently high level signal (maximum) is applied to the input side (for example, the data line) of the switching element. Even if a value is applied, the pixel electrode (driving element) connected to the output side of the conduction (opening / closing) end of the switching element can be driven to a predetermined state (standard state: for example, halftone display). However, for example, when the switching element has an ON shortage defect in which the ON resistance becomes excessive, the amount of current transfer to the drive element is reduced when the test signal is applied, and the drive element is in a state lower than the standard state (for example, White display). In addition, when the switching element has an OFF leak failure that includes an OFF current leak, the amount of current transfer to the drive element increases when a test signal is applied, and the drive element is in a higher level than the standard state (for example, black). Display). Therefore, according to the present invention, for example, by checking the state of the drive element, it is possible to easily check whether the switching element or the like is normal. According to the present invention, since the above inspection can be performed simply by applying an inspection signal to the gate line, a point-like defect caused by a characteristic defect such as a switching element in the matrix structure, etc. Can be easily detected.
Furthermore, according to the present invention, the frequency of the inspection signal is substantially the same as the frequency of the scanning signal during normal operation. Here, the normal operation means an operation other than the inspection in the matrix structure. For example, the case where the matrix structure is incorporated in a liquid crystal display device or an information processing device and operates as a product corresponds to the normal operation. Therefore, according to the present invention, since the cycle of the inspection signal is substantially the same as the cycle of the scanning signal during normal operation, the inspection time can be shortened as compared with the conventional inspection method such as Patent Document 1. . Further, according to the present invention, since the frequency of the inspection signal is substantially the same as the frequency of the scanning signal during the normal operation, the switching element and the driving element can be inspected close to the state during the normal operation. Therefore, the present invention can detect a point-like defect caused by a characteristic defect such as a switching element with high accuracy and low cost.

In the inspection method of the matrix structure of the present invention, the switching element controls signal transmission between the data line and the pixel electrode, and at least when an inspection signal is applied to the gate line, If the switching element is conductive with respect to the data line, a drive level signal is applied to the pixel electrode, and the pulse width of the inspection signal is supplied to the pixel electrode via the switching element and driven. It is preferable that the pulse width is such that the drive state of the drive element to be driven is an intermediate state which is a state between the maximum state and the minimum state.
According to the present invention, during the period of the pulse width of the inspection signal, the switching element causes the driving level signal (for example, the maximum level signal) to flow to the driving element side so that the driving element is in an intermediate state (for example, halftone display). it can. However, when the switching element has an ON shortage defect, a phenomenon occurs such that the current flowing during the period of the pulse width decreases and the potential on the driving element side does not rise to an intermediate state, and the driving element is in a low level state (for example, White display). In addition, when the switching element has an OFF leakage defect, a phenomenon occurs in which the current flowing during the pulse width increases and the potential on the driving element side rises from an intermediate state, and the driving element is in a high level state ( For example, black display). Therefore, according to the present invention, for example, by checking the state of the drive element, it is possible to easily inspect whether or not the switching element is normal.
Further, according to the present invention, the intermediate state of the drive element can be set to a normal state (standard state). Here, in general, the intermediate state of the drive element is more likely to change than the maximum state and the minimum state. That is, the maximum state is a state in which it is difficult to increase any more, and the minimum state is a state in which it is difficult to decrease any further. Therefore, according to the present invention, since the inspection signal is a signal for setting the driving element in an intermediate state, the characteristics of the switching element can be inspected with high accuracy.

In the inspection method for a matrix structure according to the present invention, it is preferable that a high level of the inspection signal is a level at which the switching element is turned on.
According to the present invention, current can be sufficiently supplied to the drive element side during the pulse width period of the inspection signal, and the inspection period can be shortened. Further, even if the pulse width of the inspection signal is made narrower, the driving element can be brought into an intermediate state, and the rising characteristics of the switching element can be inspected more accurately.

In the inspection method of the matrix structure of the present invention, it is preferable that the pulse width of the inspection signal is 1/3 to 2/3 of the pulse width of the scanning signal.
According to the present invention, the driving element can be brought into a predetermined intermediate state by the inspection signal.

In the matrix structure inspection method of the present invention, the state of the driving element is detected when an inspection signal is applied to the gate line, and whether the switching element is defective based on the detection result. It is preferable to determine whether or not.
According to the present invention, for example, when the state of the drive element is not a predetermined intermediate state when an inspection signal is applied to the gate line, it can be determined that the switching element that controls the drive element is defective. Therefore, the present invention can detect a point-like defect caused by a characteristic defect such as a switching element with high accuracy and low cost.

In the matrix structure inspection method of the present invention, the matrix structure is a constituent element of a liquid crystal display device, and the driving element is a pixel having a liquid crystal sandwiched between the pixel electrode and a counter electrode. Preferably, the switching element is a thin film transistor, the gate of the thin film transistor is connected to the gate line, and the thin film transistor controls the amount or level of a signal flowing from the data line to the pixel electrode.
According to the present invention, when the matrix structure is normal, the display state of the pixel can be set to a predetermined intermediate state (for example, gray display) by applying an inspection signal or the like. On the other hand, when the thin film transistor has a characteristic defect such as an ON shortage defect or an OFF leak defect, the pixel to be inspected does not enter a predetermined intermediate state. Therefore, the present invention can detect a characteristic failure of a thin film transistor with high accuracy and low cost based on the display state of each pixel having a matrix structure.

In the matrix structure inspection method of the present invention, it is preferable that the intermediate state of the drive element is a halftone display state in the pixel.
According to the present invention, it is possible to detect a characteristic defect of a switching element or the like depending on whether or not a pixel is in a halftone display state (for example, gray display) when an inspection signal is applied.

In the inspection method of the matrix structure of the present invention, it is preferable that the pulse width of the inspection signal is a plurality of widths.
According to the present invention, for example, as the pulse width of the inspection signal, the first width that makes the driving state of the driving element the intermediate state, the second width that is slightly larger than the first width, And a third width slightly smaller than the width. The state of the driving element when the detection signal of each pulse width is applied is changed from the first to the third state. If the first to third states are in a predetermined state, the switching element or the like is normal, and if not, it can be determined to be defective. Accordingly, the present invention can detect a characteristic defect of the switching element with higher accuracy.

In the inspection method of the matrix structure of the present invention, it is preferable that the pulse width of the inspection signal is changed.
According to the present invention, for example, the pulse width of the inspection signal is changed in a range including a level that makes the drive state of the drive element an intermediate state, and the drive state of the drive element at that time is observed. If the drive state of the drive element is a predetermined state, it can be determined that the switching element is normal, otherwise it is defective. Accordingly, the present invention can detect a characteristic defect of the switching element with higher accuracy. Further, the rate of change of the pulse width may be constant or variable. Alternatively, the pulse width may be periodically changed to remove noise having a period other than the period when the driving state is observed.

In order to achieve the above object, a matrix structure inspection apparatus according to the present invention has a structure in which a plurality of gate lines arranged in the X-axis direction and a plurality of data lines arranged in the Y-axis direction intersect each other. An inspection device having a matrix structure having a switching element arranged at the intersection and a pixel electrode arranged corresponding to the switching element, wherein the gate line is connected to the gate line during normal operation in the matrix structure. It has an inspection signal applying means for applying to the gate line an inspection signal having a frequency substantially the same as that of the applied scanning signal and having a narrow pulse width.
According to the present invention, the inspection signal applying means can apply the inspection signal to the gate line. The inspection signal can be composed of a signal such as a rectangular wave having the same frequency and a narrow pulse width as compared with the scanning signal that is a signal during normal operation. For example, even if a sufficiently high level signal (maximum value) is applied to the input side (for example, data line) of the switching element, the drive element connected to the output side of the switching element is in the standard state. (For example, halftone display). However, for example, when there is a characteristic defect in the switching element, the driving element does not enter the standard state when the inspection signal is applied. Therefore, according to the present invention, for example, by checking the state of the drive element, it is possible to easily check whether the switching element or the like is normal.
Furthermore, according to the present invention, since the frequency of the inspection signal is substantially the same as the frequency of the scanning signal during normal operation, the inspection time can be shortened as compared with the conventional inspection method such as Patent Document 1. Further, according to the present invention, since the frequency of the inspection signal is substantially the same as the frequency of the scanning signal during the normal operation, the switching element and the driving element can be inspected close to the state during the normal operation. Therefore, the present invention can detect a point-like defect caused by a characteristic defect such as a switching element with high accuracy and low cost.

In the inspection apparatus having the matrix structure according to the present invention, when the inspection signal is applied to the gate line, a signal having the maximum level in the data signal applied to the data line during normal operation in the matrix structure is transmitted to the data line. It is preferable to have a data signal applying means for applying to the signal.
According to the present invention, the maximum level signal applied to the data line by the data signal applying means can pass through the switching element only during the high level period with a narrow pulse width in the inspection signal. Thereby, the drive element can be in an intermediate state (for example, gray display). However, when the switching element has an ON shortage failure or an OFF leakage failure, the current passing through the switching element is larger or smaller than normal, and is close to the maximum state (for example, black display) or the minimum state (for example, white display). It becomes a state. Therefore, according to the present invention, for example, by checking the state of the drive element, it is possible to easily inspect whether or not the switching element is normal.

In the inspection apparatus having the matrix structure according to the present invention, the conduction state of the switching element in the matrix structure is controlled by a signal applied to the gate line, and the pulse width of the inspection signal passes through the switching element. The pulse width is preferably set to an intermediate state that is a state between the maximum state and the minimum state of the drive element that is supplied and driven to the pixel electrode.
According to the present invention, for example, the pulse width of the inspection signal can be set to a width that makes a threshold state that is an intermediate state between the maximum state and the minimum state in the drive state of the drive element. Therefore, according to the present invention, it is possible to more accurately and easily inspect whether or not the switching element is normal, for example, by looking at the state of the drive element.

In the inspection apparatus having a matrix structure according to the present invention, it is preferable that the inspection signal applying unit includes a probe that is capacitively coupled to a gate line or an electrode of the gate line in the matrix structure.
According to the present invention, an inspection signal can be applied to a gate line or an electrode of the gate line without mechanically contacting the probe. Therefore, according to the present invention, the inspection signal can be applied reliably and easily without damaging the gate line or the gate line electrode.

In order to achieve the above object, a method of manufacturing a matrix structure according to the present invention includes a structure in which a plurality of gate lines arranged in the X-axis direction and a plurality of data lines arranged in the Y-axis direction intersect each other. A method of manufacturing a matrix structure having a switching element arranged at the intersection and a pixel electrode arranged corresponding to the switching element, wherein the gate line is a conduction state of the switching element And a test signal having a frequency substantially the same as that of the scanning signal applied to the gate line during normal operation in the matrix structure and a narrow pulse width, The switching element is in a conductive state with respect to the data line at least when an inspection signal is applied to the gate line. If the driving level signal is applied to the pixel electrode, the state of the driving element driven through the pixel electrode is detected when the inspection signal and the driving level signal are applied, and the detection result is Based on this, a part of the matrix structure is modified or formed.
According to the present invention, defects such as switching elements in the matrix structure can be detected with high accuracy by applying the inspection signal and the drive level signal to detect the state of the drive element. Furthermore, according to the present invention, when a defect is detected, it is possible to make corrections such as replacing the switching element related to the defect with another switching element. Thus, even if a part of the matrix structure has a defect, the defect can be eliminated by correction or the like, and a high-quality matrix structure can be provided inexpensively and promptly.

In the method for manufacturing a matrix structure according to the present invention, the pulse width of the inspection signal may be set so as to change a driving state of the driving element driven through the switching element and the pixel electrode when the driving level signal is applied. The pulse width is preferably set to an intermediate state that is a state between the maximum state and the minimum state.
According to the present invention, since the drive element is inspected in an intermediate state, defects such as switching elements in the matrix structure can be detected with higher accuracy. Therefore, the present invention can provide an even higher quality matrix structure at low cost and quickly.

  Hereinafter, a matrix structure inspection method, a matrix structure inspection apparatus, and a matrix structure manufacturing method according to embodiments of the present invention will be described with reference to the drawings. In the embodiments described below, a display portion of a liquid crystal display device is given as an example of a matrix structure.

  FIG. 1 is a circuit diagram showing an example of an inspection apparatus having a matrix structure according to an embodiment of the present invention. The inspection apparatus having the matrix structure can be used for carrying out the inspection method for the matrix structure according to the present invention. Accordingly, a matrix structure inspection method according to the present invention will be described along with the description of the configuration and operation of the matrix structure inspection apparatus. The inspection apparatus having a matrix structure according to this embodiment includes an inspection signal applying unit 20 and a data signal applying unit 30. The inspection apparatus having the matrix structure is an apparatus for inspecting the matrix structure 100.

  First, the matrix structure 100 will be described. The matrix structure 100 forms a display portion of an active matrix liquid crystal display device driven by TFTs. In the matrix structure 100, a plurality of data lines 3a, 3b arranged in the Y-axis direction and a plurality of gate lines 4a, 4b, 4c, 4d, 4e arranged in the X-axis direction intersect in a lattice pattern. It has the structure which has. A TFT (switching element) 2 is arranged at each intersection of the data lines 3a, 3b and the gate lines 4a, 4b, 4c, 4d, 4e in the matrix structure 100. The TFT 2 is a switching element and controls signal transmission between the data lines 3a and 3b and the liquid crystal pixel 1 as a driving element. The TFT 2 is an n-channel TFT, for example. The sources of the TFTs 2 arranged in the vicinity of the data lines 3a and 3b are electrically connected to the data lines 3a and 3b. The gates of the TFTs 2 arranged in the vicinity of the gate lines 4a, 4b, 4c, 4d, and 4e are electrically connected to the gate lines 4a, 4b, 4c, 4d, and 4e.

  Further, a liquid crystal pixel (driving element) 1 is arranged at each intersection of the data lines 3a and 3b and the gate lines 4a, 4b, 4c, 4d, and 4e in the matrix structure 100. The liquid crystal pixel 1 serves as a driving element driven by a signal flowing through the TFT 2. The liquid crystal pixel 1 has a configuration in which the liquid crystal is sandwiched between the pixel electrode 1a and the counter electrode 1b. The pixel electrode 1a is electrically connected to the drain of the TFT2. A reference potential (for example, 0 volts or several volts) is applied to the counter electrode 1b. Further, an auxiliary capacitor 5 is electrically connected to the drain of each TFT 2.

  In the matrix structure 100 having such a configuration, a plurality of liquid crystal pixels 1 whose display states such as light and dark are driven and controlled by the TFTs 2 are arranged like a grid, and an image having a desired shape can be displayed. In the image display, image signals (data signals) are supplied to the data lines 3a and 3b, and scanning signals are supplied to the gate lines 4a, 4b, 4c, 4d, and 4e. For example, each TFT 2 is turned on (conductive state) for a certain period by a pulsed scanning signal sequentially applied to the gate lines 4a, 4b, 4c, 4d, and 4e. During this fixed period, the image signal applied to the data lines 3a and 3b passes through the TFT 2 and is applied to the pixel electrode 1a. The image signal (potential) applied to the pixel electrode 1a is held by the auxiliary capacitor 5 for a certain period. The liquid crystal sandwiched between the pixel electrode 1a and the counter electrode 1b changes the orientation and order of the molecular assembly depending on the applied voltage level, modulates the light transmittance, and enables gradation display. As a result, the liquid crystal pixel 1 has substantially constant brightness according to the image signal for a certain period.

  For example, it is assumed that the matrix structure 100 forms a normally white display unit. Then, when the level of the image signal is zero, the liquid crystal pixel 1 is displayed in white (minimum state). When the level of the image signal is the maximum level, the liquid crystal pixel 1 is displayed in black (maximum state). When the level of the image signal is an intermediate level, the liquid crystal pixel 1 is displayed in gray (halftone). In FIG. 1, an image signal supply unit that supplies an image signal and a scanning signal supply unit that supplies a scanning signal are not shown. Further, a color image is displayed by overlaying a color filter on each liquid crystal pixel 1.

  Further, in the matrix structure 100 shown in FIG. 1, there is one short-circuit defect 111a in the vicinity of the intersection of the data line 3a and the gate line 4c. The short-circuit defect 111a causes an OFF leak failure. That is, the short-circuit defect 111a is a defect that short-circuits between the drain and the source of the TFT 2 in the vicinity of the intersection of the data line 3a and the gate line 4c, or a defect that greatly reduces the OFF resistance between the drain and the source from the design value. is there.

  In the matrix structure 100, there is one open defect 111b in the vicinity of the intersection of the data line 3b and the gate line 4d. This open defect 111b is an ON shortage defect. In other words, the open defect 111b is a defect that opens between the drain and source of the TFT 2 in the vicinity of the intersection of the data line 3b and the gate line 4d, or a defect that greatly increases the ON resistance between the drain and source than the design value. It is.

  The short-circuit defect 111a and the open defect 111b are generated, for example, when electrostatic breakdown occurs in the matrix structure 100 and the physical properties between the drain and source of the TFT 2 change. Alternatively, in the manufacturing process of the matrix structure 100, there may be a case where a short conductive defect 111a and an open defect 111b are formed when a minute conductive foreign material including a metal pattern residue forming a wiring or the like is mixed in the formation layer of the TFT2. Further, in such a manufacturing process, the short-circuit defect 111a and the open defect 111b may occur due to the formation layer of the TFT 2 not being formed as designed.

  Next, the inspection apparatus having the matrix structure in FIG. 1 will be described. The data signal applying unit 30 can apply a drive level signal to the data lines 3a and 3b. Here, the drive level signal is a signal having a potential level that brings the liquid crystal pixel 1 into the maximum drive state (black display state) if the TFT 2 is sufficiently conductive (closed state). In other words, the drive level signal is the maximum level signal in the image signal.

  The data signal applying means 30 has an output probe 31. Then, the data signal applying unit 30 outputs a drive level signal to the output probe 31. Therefore, by bringing the output probe 31 into contact with the electrodes 17 of the data lines 3a and 3b of the matrix structure 100, a drive level signal can be applied to the data lines 3a and 3b. The data signal applying means 30 may output drive level signals to all the data lines 3a and 3b at the same time, and output drive level signals for each data line 3a and 3b individually by shifting the timing. May be. Further, the data signal applying unit 30 may include a current limiting unit for output. This is to prevent an excessive current from flowing due to a short-circuit defect 111a in the matrix structure 100 or the like.

  Next, the inspection signal applying means 20 that forms the main part of the inspection apparatus having the matrix structure will be described. The inspection signal applying means 20 is a signal having substantially the same frequency and a narrow pulse width as compared with the scanning signals applied to the gate lines 4a, 4b, 4c, 4d, and 4e during normal operation in the matrix structure 100. An inspection signal is applied to the gate lines 4a, 4b, 4c, 4d, and 4e. The inspection signal applying means 20 has an output probe 21. Then, the inspection signal applying unit 20 outputs an inspection signal to the output probe 21. Therefore, by applying the output probe 21 to the electrodes 16 of the gate lines 4a, 4b, 4c, 4d, and 4e of the matrix structure 100, it is possible to apply inspection signals to the gate lines 4a, 4b, 4c, 4d, and 4e. it can. The inspection signal applying means 20 may simultaneously output inspection signals to all the gate lines 4a, 4b, 4c, 4d, and 4e, and each gate line 4a, 4b, 4c, 4d, and 4e is individually output. The inspection signal may be output by shifting the timing. Further, the inspection signal applying unit 20 may include a current limiting unit for output. This is to prevent an excessive current from flowing due to a short-circuit defect 111a in the matrix structure 100 or the like.

  FIG. 2 is a waveform diagram showing an example of the inspection signal output by the inspection signal applying means 20. In this waveform diagram, the horizontal axis indicates time, and the vertical axis indicates the signal level. In FIG. 2A, the inspection signal is indicated by a solid line and the scanning signal is indicated by a dotted line. FIG. 2B shows only the scanning signal, and FIG. 2C shows only the inspection signal. As described above, the scanning signal is a signal given to the gate lines 4a, 4b, 4c, 4d, and 4e during the normal operation in the matrix structure 100. Here, the normal operation time is an operation time when the matrix structure 100 is incorporated into the liquid crystal display device as a finished product, and the liquid crystal display device operates according to a desired design.

  The cycle T of the inspection signal is the same as the cycle T of the scanning signal. Here, “identical” does not require theoretically the same. For example, in the matrix structure 100, there are 200 gate lines 4a, 4b, 4c, 4d, 4e, and a scanning signal is applied to all the gate lines 4a, 4b, 4c, 4d, 4e in 1/60 seconds. Period T = (1/60) / 200 = about 83 microseconds.

  The high level L of the inspection signal is the same as the high level L of the scanning signal. Therefore, it is preferable that the high level L of the inspection signal is a level that sufficiently brings the TFT 2 into a conductive state, similarly to the high level of the scanning signal of a general display device. Specifically, the high level L of the inspection signal can be 10 volts to 15 volts.

  The pulse width d2 of the inspection signal is narrower than the pulse width d1 of the scanning signal. The pulse width d1 of the scanning signal is defined by the capacity of the liquid crystal pixel 1 and the auxiliary capacitor 5 and the like. For example, the pulse width d2 of the inspection signal can be set to 1/3 to 2/3 of the pulse width d1 of the scanning signal. The pulse width d2 of the inspection signal is an intermediate state (halftone gray) in which the driving state of the liquid crystal pixel 1 is between the maximum state (black display) and the minimum state (white display) by the current flowing through the TFT 2. It is preferable that the pulse width be displayed.

  FIG. 3 is a diagram showing an example of operating characteristics of the TFT 2 that is a component of the matrix structure 100. This example of operating characteristics shows an example in which the TFT 2 provided in the matrix structure 100 is inspected. A signal having the same level as the high level L of the inspection signal is applied to the gate of the TFT 2 to be inspected. Further, it is assumed that a signal having the same level as the drive level signal applied to the data lines 3a and 3b is applied to the source of the TFT 2 to be inspected. Further, the liquid crystal pixel 1 and the auxiliary capacitor 5 are connected to the drain side of the TFT 2 to be inspected as shown in FIG. In FIG. 3, the horizontal axis indicates the elapsed time since the signal having the same level as the high level L of the inspection signal is applied to the gate of the TFT 2. In FIG. 3, the vertical axis indicates the potential on the drain side (liquid crystal pixel 1) of the TFT2.

  A solid line in FIG. 3 indicates a normal operation characteristic of the TFT 2. When an inspection signal and a drive level signal are applied to a normal TFT 2, a current flows from the source side to the drain side, and the potential on the drain side gradually increases. This potential increase continues to a potential defined by the level of the inspection signal and the drive level signal, and is saturated at the defined potential.

  The dotted line in FIG. 3 shows the operating characteristics of the TFT 2 having the short-circuit defect 111a, that is, the OFF leakage defect. In the TFT 2 having the OFF leak defect, the potential on the drain side gradually increases with time, but the potential rises more rapidly than the normal TFT 2 and becomes a saturated potential in a short time.

  The broken line in FIG. 3 shows the operating characteristics of the TFT 2 having the open defect 111b, that is, the ON shortage defect. The TFT 2 with the ON shortage failure gradually increases in potential on the drain side as time elapses, but the potential increase is slower than that in the normal TFT 2 and becomes saturated after a long time.

  3 is a time corresponding to the pulse width d1 of the scanning signal. At this time t1, the potential difference Vd11 between the normal TFT 2 and the TFT 2 with the OFF leakage defect is relatively small, and the potential difference Vd12 between the normal TFT 2 and the TFT 2 with the ON shortage defect is also relatively small. Therefore, at time t1, the liquid crystal pixels 1 driven by the normal TFT 2 and the TFT 2 having poor characteristics display substantially the same black display, and it is difficult to identify the display state. Therefore, it can be seen that it is difficult to detect a characteristic failure of the TFT 2 using the scanning signal.

  The time t2 in FIG. 3 is a time corresponding to the pulse width d2 of the inspection signal. At this time t2, the potential difference Vd21 between the normal TFT 2 and the TFT 2 with the OFF leakage defect is relatively large, and the potential difference Vd22 between the normal TFT 2 and the TFT 2 with the ON shortage defect is also relatively large. Therefore, at time t2, the liquid crystal pixel 1 driven by the normal TFT 2 is displayed in gray, and the liquid crystal pixel 1 driven by the TFT 2 having the OFF leak defect is displayed in black, and is driven by the TFT 2 having the ON shortage defect. The liquid crystal pixel 1 to be displayed has a whitish display. Therefore, at the time t2 corresponding to the pulse width d2 of the inspection signal, the liquid crystal pixels 1 driven by the normal TFT 2 and the defective TFT 2 are greatly different in display state, and it is easy to identify the display state. It becomes.

  Thus, according to the present embodiment, by applying inspection signals to the gate lines 4a, 4b, 4c, 4d, and 4e, and inspecting the display state of the matrix structure 100 at that time, it is possible to reduce the characteristics of the TFT 2 and the like. The resulting point defect can be detected efficiently and reliably.

  FIG. 4 is a diagram showing a state in which the matrix structure 100 is inspected by the matrix structure inspection apparatus of the present embodiment. That is, FIG. 4 shows a state in which an inspection signal is applied to the matrix structure 100 by the inspection signal applying unit 20 and a drive level signal is applied by the data signal applying unit 30. In other words, the inspection signal is applied to all the gate lines 4a, 4b, 4c, 4d, and 4e, and the drive level signal is applied to all the data lines 3a and 3b.

  Here, when the TFT 2 and the liquid crystal pixel 1 etc. of the matrix structure 100 are normal and free of defects, each liquid crystal pixel 1 is displayed in a gray-scale “gray” color as shown in FIG. 4 by the inspection signal and the drive level signal. It becomes.

  On the other hand, when there is a short-circuit defect 111a, the drive level signal that is the maximum level image signal leaks in the TFT 2 including the short-circuit defect 111a. Therefore, the TFT 2 including the short-circuit defect 111 a supplies a larger current to the liquid crystal pixel 1 than the normal TFT 2. As a result, the liquid crystal pixel 1 that is driven and controlled by the TFT 2 including the short-circuit defect 111a is in a state of “black” display in the maximum state or a state close to “black” display as shown in FIG.

  Further, when there is an open defect 111b, transmission of a drive level signal, which is an image signal at the maximum level, is inhibited in the TFT 2 including the open defect 111b. Therefore, the TFT 2 including the open defect 111 b supplies a current smaller than that of the normal TFT 2 to the liquid crystal pixel 1. As a result, the liquid crystal pixel 1 that is driven and controlled by the TFT 2 including the open defect 111b is in a state of “white” display in the minimum state or close to “white” display as shown in FIG.

  Therefore, by applying inspection signals and drive level signals to the matrix structure 100 and detecting the display state of the matrix structure 100 at that time, the TFT 2 has a characteristic abnormality such as a short-circuit defect 111a or an open defect 111b. It can be inspected. That is, in the detection of the display state, if all the liquid crystal pixels 1 are displayed in a predetermined gray color, it can be determined that the matrix structure 100 is not defective. On the other hand, in the detection of the display state, if there is a liquid crystal pixel 1 that displays “black” or “gray close to black”, the TFT 2 that drives and controls the liquid crystal pixel 1 has a short-circuit defect 111 a that causes an OFF leakage defect. Judgment can be made. In the detection of the display state, if there is a liquid crystal pixel 1 displaying “white” or “gray close to white”, the TFT 2 that drives and controls the liquid crystal pixel 1 has an open defect 111b that causes an ON shortage defect. Judgment can be made.

  As a result, according to the inspection apparatus and inspection method having the matrix structure of the present embodiment, it is possible to easily and accurately inspect for defective characteristics of the TFT 2. Further, according to the present embodiment, since the cycle T of the inspection signal is the same as the cycle T of the scanning signal, the inspection time can be shortened as compared with the conventional inspection apparatus and method. Further, according to the present embodiment, since the inspection can be performed in a state close to a normal driving state, it is possible to detect a point-like defect caused by a characteristic defect of the TFT 2 with high accuracy and low cost.

  In the present embodiment, the pulse width d2 of the inspection signal may be a plurality of widths. For example, the inspection signal has, as the pulse width d2, a first width that makes the liquid crystal pixel 1 halftone, a second width that is slightly larger than the first width, and slightly smaller than the first width. And a third width. That is, the inspection signal has the pulse width d2 as the first width at a certain timing, the pulse width d2 as the second width at other timings, and the pulse width d2 as the third width at other timings. It is good. The display state of the liquid crystal pixel 1 corresponding to each pulse width is defined as the first, second, and third states. If the first, second, and third states are in a predetermined state, it can be determined that the TFT 2 or the like is normal, otherwise it is defective. Accordingly, it is possible to detect a characteristic failure of the TFT 2 with higher accuracy.

  In the present embodiment, the pulse width d2 of the inspection signal may be changed. For example, it is assumed that the pulse width d2 of the inspection signal changes within a range including a width that makes the liquid crystal pixel 1 halftone. The display state of the liquid crystal pixel 1 when changed is observed. If the display state of the liquid crystal pixel 1 is a predetermined state, it can be determined that the TFT 2 or the like is normal, and if not, there is a defect. Accordingly, it is possible to detect a characteristic failure of the TFT 2 with higher accuracy.

  5 and 6 are circuit diagrams showing other configuration examples of the inspection apparatus having the matrix structure according to the present embodiment. 5 and 6, the same components as those in FIG. 1 are denoted by the same reference numerals. The difference between the inspection apparatus having the matrix structure shown in FIG. 5 and the inspection apparatus shown in FIG. 1 is that the output probe 21 of the inspection signal applying means 20 has a common probe 21a.

  The common probe 21a has rod-shaped electrodes that can simultaneously contact the plurality of electrodes 16 of the gate lines 4a, 4b, 4c, 4d, and 4e. The inspection signal applying means 20 outputs an inspection signal to the common probe 21a. Thus, the same inspection signal can be applied to the plurality of gate lines 4a, 4b, 4c, 4d, and 4e via the common probe 21a. Therefore, according to the inspection apparatus having this matrix structure, the common probe 21a can be brought into contact with the plurality of electrodes 16 more simply than the output probes 21 are brought into contact with the plurality of electrodes 16, respectively. Therefore, the inspection apparatus having the present matrix structure can make the inspection of the matrix structure 100 easier.

  The difference between the inspection apparatus having the matrix structure shown in FIG. 6 and the inspection apparatus shown in FIG. 5 is that the common probe 21b in the inspection signal applying means 20 is connected to the plurality of electrodes 16 of the gate lines 4a, 4b, 4c, 4d, 4e. In contrast, it is capacitively coupled. That is, at the time of inspection, the common probe 21b and the plurality of electrodes 16 are arranged with a predetermined gap without contacting each other. An AC or pulsating test signal is applied to the common probe 21b. The inspection signal is transmitted from the common probe 21b to the plurality of electrodes 16 by capacitive coupling. Therefore, since the inspection apparatus having the matrix structure does not require the common probe 21b to contact the electrode 16, damage to the electrode 16 and the like due to the inspection can be avoided, and a plurality of inspection signals can be more easily and reliably provided. The electrode 16 can be applied.

  FIG. 7 is a circuit diagram showing a modification of the inspection apparatus having a matrix structure according to the present embodiment. In FIG. 7, the same components as those shown in FIG. The inspection apparatus having a matrix structure according to this modification includes an imaging unit 201, a pattern recognition unit 202, a synchronization unit 203, and a control unit 204 in addition to the configuration of the above-described embodiment shown in FIGS.

  The imaging means 201 is constituted by, for example, a CCD camera. The subject of the imaging unit 201 is a display area of the matrix structure 100. According to this configuration example, dot-like defects in the matrix structure 100 are displayed as an image pattern of “black” points or “white” points in a gray region, for example. Therefore, it is possible to detect a point-like defect or the like with high accuracy without increasing the sensitivity and resolution of the imaging unit 201.

  The pattern recognition unit 202 recognizes a pattern as to whether there is a dot pattern, for example, for the image input by the imaging unit 201. Therefore, according to the present modified example, even if there is noise such as ambient light on the entire input image of the imaging unit 201, false detection can be reduced and point-like defects can be detected with high accuracy.

  The synchronizing unit 203 synchronizes the timing of signal application by the inspection signal applying unit 20 and the timing at which the imaging unit 201 detects an image. The control means 204 controls the operation of the entire inspection apparatus having the matrix structure. According to this modification, noise such as ambient light that is asynchronous with the synchronization timing by the synchronization means 203 can be removed. Therefore, it is possible to detect a point-like defect or the like with higher accuracy.

(Production method)
Next, with reference to FIG. 4, the manufacturing method of the matrix structure which concerns on embodiment of this invention is demonstrated. The manufacturing method of this matrix structure is a method for manufacturing a matrix structure like the matrix structure 100 shown in FIG. Then, the matrix structure 100 is once manufactured, and the matrix structure 100 is inspected by using the inspection apparatus or inspection method of the matrix structure of the above embodiment.

  In this inspection, when it is detected that a part of the matrix structure 100 is defective, the defect is corrected to make the entire matrix structure 100 a normal structure. Thereby, the manufacture of the matrix structure 100 is completed. For example, as shown in FIG. 4, when it is detected that the TFT 2 in the vicinity of the intersection of the data line 3a and the gate line 4c in the matrix structure 100 has a short-circuit defect 111a, the TFT 2 is preliminarily stored in the matrix structure 100 as a spare. Replace with the normal TFT that has been formed. Further, instead of replacing with a normal TFT, the TFT 2 having the short-circuit defect 111a may be restored to a normal TFT. Further, a normal TFT may be separately formed in the vicinity of the TFT 2 having the short-circuit defect 111a. Even when the TFT 2 near the intersection of the data line 3b and the gate line 4d in the matrix structure 100 has the open defect 111b, it can be repaired in the same manner as the short-circuit defect 111a.

  Thus, according to the manufacturing method of the matrix structure of the present embodiment, a high-quality matrix structure can be provided inexpensively and promptly. For example, a large-screen liquid crystal display device can be provided quickly and inexpensively.

(Application examples)
FIG. 8 is a plan view showing a main part of a liquid crystal display device according to an application example of the present embodiment. The main part of the liquid crystal display device has a matrix structure in which defects are inspected by the matrix structure inspection method and the matrix structure inspection apparatus according to the present embodiment. In FIG. 8, the same components as those shown in FIG.

  The main part of the liquid crystal display device includes a TFT array substrate 7 having a configuration corresponding to the matrix structure 100. As shown in FIG. 8, a plurality of pixel electrodes 1a (outlined by broken lines) made of a transparent conductive film such as indium tin oxide (hereinafter abbreviated as ITO) is formed on the TFT array substrate 7. ) Are arranged in a matrix, and data lines 3 (the outline is indicated by a two-dot chain line) are provided along the side extending in the vertical direction on the paper surface of the pixel electrode 1a, and gate lines are provided along the side extending in the horizontal direction on the paper surface. (Scanning line) 4 and capacitive line 6 (both contours are indicated by solid lines) are provided.

  In the main part of the present liquid crystal display device, the gate line 4 includes a main gate line 4A intersecting with the plurality of data lines 3, and a branch gate line 4B extending from the main gate line 4A, and a polysilicon film. An L-shaped portion 8a intersecting the branch gate line 4B and the main gate line 4A is formed in the semiconductor layer (first capacitor electrode) 8 (contour is indicated by a one-dot chain line). That is, the L-shaped portion 8a intersects the main gate line 4A and the branch gate line 4B to form two channel regions.

  Contact holes 9 and 10 are formed at both ends of the L-shaped portion 8a of the semiconductor layer 8, and one contact hole 9 serves as a source contact hole that electrically connects the data line 3 and the source region of the semiconductor layer 8, and the other The contact hole 10 is a drain contact hole that electrically connects the drain electrode 11 (the outline is indicated by a two-dot chain line) and the drain region of the semiconductor layer 8. That is, the source contact hole 9 and the drain contact hole 10 are disposed on opposite sides of the gate line 4. Further, a pixel contact hole 12 for electrically connecting the drain electrode 11 and the pixel electrode 1a is formed at the end of the drain electrode 11 opposite to the side where the drain contact hole 10 is provided. .

  The TFT 2 in the main part of the present liquid crystal display device intersects the main gate line 4A and the branch gate line 4B at the L-shaped portion 8a of the semiconductor layer 8, and the semiconductor layer 8 and the gate line 4 intersect twice. Therefore, a TFT having two gates on one semiconductor layer, a so-called dual gate type TFT is formed. Further, the capacitor line 6 extends along the gate line 4 so as to pass through pixels arranged in the horizontal direction on the paper surface, and a branched part 6 a extends along the data line 3 in the vertical direction on the paper surface. Therefore, the storage capacitor 5 is formed by the semiconductor layer 8 and the capacitor line 6 along the data line 3. In the present embodiment, half of the branch gate line 4B is covered with the wide portion 3A in which the width of the data line 3 is increased, thereby suppressing light from entering the channel region of this portion.

  FIG. 9 is a diagram showing a cross-sectional structure of the TFT array substrate 7. As shown in FIG. 9, the TFT array substrate 7 has a glass substrate 41 as a supporting substrate, and the TFT 2 is formed on the inner surface via a base insulating film 42. The TFT 2 includes a gate line 4, a channel region 50 of the semiconductor layer 8 in which a channel is formed by an electric field from the gate line 4, a gate insulating film 44 that is an insulating thin film that insulates the gate line 4 and the semiconductor layer 8, data Line 3, source region 49 and drain region 51 of semiconductor layer 8 are provided.

  Further, on the glass substrate 41 including the gate line 4 and the gate insulating film 44, the first interlayer insulating layer 52 in which the source contact hole 9 leading to the source region 49 and the drain contact hole 10 leading to the drain region 51 are respectively formed. Is formed. That is, the data line 3 is electrically connected to the source region 49 through the source contact hole 9 that penetrates the first interlayer insulating layer 52. Further, a second interlayer insulating layer 53 in which the drain contact hole 10 leading to the drain region 51 is formed is formed on the data line 3 and the first interlayer insulating layer 51. That is, the drain region 51 is electrically connected to the drain electrode 11 and the pixel electrode 1a through the drain contact hole 10 penetrating the first interlayer insulating layer 52 and the second interlayer insulating layer 53. Further, an alignment film 54 that has been subjected to an alignment process in a certain rubbing direction Y by a rubbing process is provided on the second interlayer insulating layer 53 and the pixel electrode 1a. The alignment film 54 is a horizontal alignment film made of a polyimide-based polymer resin.

  The wide portion (light shielding layer) 3A and the capacitor line (light shielding layer) 6 function as a so-called black matrix that shields light from areas other than the display area of each pixel. That is, the wide portion 3A and the capacitor line 6 have a function of hiding the disclination portion, and incident light from the counter substrate 15 side enters the channel region 50, the source region 49, the drain region 51, and the like in the semiconductor layer 8 of the TFT 2. In addition to preventing intrusion, it has functions such as improving the contrast ratio and preventing color mixing of the color filter color material.

  In the main part of the present liquid crystal display device, the overlapping part (hatched part in FIG. 8) of the wide part 3A and the capacitor line 6 and the pixel electrode 1a is on the opposite side of the rubbing direction Y in the peripheral part of the pixel electrode 1a. A region overlapping with the peripheral portion (region where the disclination is large) is formed wider than the peripheral portion (region where the disclination is small) on the forward direction side in the rubbing direction Y. That is, the width of the overlapping portion b is wider than that of the overlapping portion a, and the width of the overlapping portion c is set wider than that of the overlapping portion d, so that the overlapping portion is asymmetric on the left and right and top and bottom. Note that the widths of these overlapping portions a, b, c, and d are determined according to the range of disclination that occurs in those portions.

  FIG. 10 is a plan view showing the entire configuration of the liquid crystal display device 40 having the TFT array substrate 7. That is, FIG. 10 shows an overall configuration of a liquid crystal display device 40 according to an application example of the present embodiment. FIG. 11 is a cross-sectional view of the liquid crystal display device 40 shown in FIG. The liquid crystal display device 40 has a configuration in which the liquid crystal layer 116 is sandwiched between the TFT array substrate 7 and the counter substrate 15.

  10 and 11, a sealing material 28 is provided on the TFT array substrate 7 along the edge thereof, and a light shielding film 29 as a frame is provided in parallel to the inside thereof. A data line driving circuit 130 and an external circuit connection terminal 31 are provided along one side of the TFT array substrate 7 in a region outside the sealing material 28, and the gate line driving circuit 32 is provided on two sides adjacent to the one side. It is provided along. Needless to say, if the delay of the scanning signal supplied to the gate line 4 does not become a problem, the gate line driving circuit 32 may be only on one side. Further, the data line driving circuit 130 may be arranged on both sides along the side of the image display area. For example, the odd-numbered data lines 3 supply an image signal from a data line driving circuit disposed along one side of the image display area, and the even-numbered data lines 3 are on the opposite side of the image display area. The image signal may be supplied from a data line driving circuit arranged along the line. If the data lines 3 are driven in a comb shape in this way, the area occupied by the data line driving circuit can be expanded, and a complicated circuit can be configured. Further, on the remaining side of the TFT array substrate 7, a plurality of wirings 33 are provided for connecting between the gate line driving circuits 32 provided on both sides of the image display area. In addition, a conductive material 34 for providing electrical continuity between the TFT array substrate 7 and the counter substrate 15 is provided in at least one corner of the counter substrate 15 on which the counter electrode is formed inside. . The counter substrate 15 having substantially the same outline as the sealing material 28 is fixed to the TFT array substrate 7 by the sealing material 28.

  In the present liquid crystal display device 40, in the overlapping portion of the wide portion 3A and the capacitor line 6 and the pixel electrode 1a, the region overlapping the peripheral portion on the opposite side of the rubbing direction Y in the peripheral portion of the pixel electrode 1a is in the rubbing direction Y. Since it is formed wider than the area overlapping the forward direction side, an appropriate size black matrix (overlapping part) is arranged according to the size of disclination determined by the rubbing direction, and disclination from the opening Can be prevented, and the aperture ratio can be improved by not shielding light more than necessary in a portion where the disclination is small.

  In the liquid crystal display device 40, the wide portion 3A and the capacitor line 6 which are part of the data line 3 are used as the light shielding layer, but a light shielding layer may be provided separately from these. For example, a black matrix may be formed inside the counter substrate 15. However, if the wide portion 3A of the data line 3 and the capacitor line 6 function as a black matrix as in the present liquid crystal display device 40, it is not necessary to separately provide a light shielding layer serving as a black matrix on the counter substrate 15 or the like. Simplification of the structure and reduction of manufacturing processes can be achieved.

  Furthermore, in the manufacturing process of the TFT array substrate 7 which is a component of the liquid crystal display device 40, the matrix structure inspection method, the matrix structure inspection device, and the matrix structure manufacturing method according to the embodiment of the present invention are used. As a result, a characteristic defect or the like of the TFT 2 is detected with high accuracy and low cost, and the liquid crystal display device 40 in which the defect is avoided or corrected can be manufactured. Therefore, according to this application example, the high-quality and low-cost liquid crystal display device 40 can be provided.

(Electronics)
Next, another electronic device having the liquid crystal display device 40 of the application example as a constituent element will be described.
FIG. 12A is a perspective view showing an example of a mobile phone. In FIG. 12A, reference numeral 500 denotes a mobile phone body, and reference numeral 501 denotes a display unit having the liquid crystal display device 40 of the application example. FIG. 12B is a perspective view showing an example of a wristwatch type electronic device. In FIG. 12B, reference numeral 600 denotes a watch body, and reference numeral 601 denotes a display unit having the liquid crystal display device 40 of the application example. FIG. 12C is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 12C, reference numeral 700 denotes an information processing apparatus, reference numeral 701 denotes an input unit such as a keyboard, reference numeral 702 denotes a display unit including the liquid crystal display device 40 of the application example, and reference numeral 703 denotes an information processing apparatus main body. Show.

  Since the electronic device shown in FIG. 12 has the liquid crystal display device 40 of the application example, it can be an electronic device that is highly reliable, has high performance, and can be manufactured at low cost.

  The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention, and the specific materials and configurations described in the embodiment. These are merely examples, and can be changed as appropriate.

  For example, in the above-described embodiment, an example of a matrix structure used for a liquid crystal display device has been described, but the present invention is not limited to this, and can be applied to various devices having a matrix structure. . That is, a matrix structure inspection method, a matrix structure inspection apparatus, and a matrix structure manufacturing method according to the present invention are applied to a memory integrated circuit or an image pickup device composed of an organic electroluminescence display device, a complementary metal oxide semiconductor (CMOS), or the like. Examples include a matrix structure such as an integrated circuit.

  In the above embodiment, a normally white liquid crystal display device has been described. However, the present invention can also be applied to a normally black display device. In the above embodiment, a rectangular wave is used as the inspection signal. However, a waveform other than the rectangular wave (for example, a triangular wave, a sawtooth wave, a sine wave, etc.) may be applied to the inspection signal.

It is a circuit diagram which shows the test | inspection apparatus of the matrix structure which concerns on embodiment of this invention. It is a wave form diagram which shows an example of the signal for a test | inspection which an inspection apparatus same as the above outputs. It is a figure which shows the example of an operational characteristic of TFT. It is a figure which shows the state which test | inspects the matrix structure with the inspection apparatus same as the above. It is a circuit diagram of another example of the inspection apparatus of the matrix structure which concerns on embodiment of this invention. It is a circuit diagram of another example of the inspection apparatus of the matrix structure which concerns on embodiment of this invention. It is a circuit diagram which shows the modification of the test | inspection apparatus of the matrix structure which concerns on this embodiment. It is a top view which shows the example of a matrix structure test | inspected with the inspection apparatus same as the above. It is sectional drawing of the example of a matrix structure same as the above. It is a top view which shows the liquid crystal display device which has an example of a matrix structure same as the above. It is sectional drawing of a liquid crystal display device same as the above. It is a figure which shows an example of the electronic device which concerns on embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Liquid crystal pixel, 1a ... Pixel electrode, 1b ... Counter electrode, 2 ... TFT, 3a, 3b ... Data line, 4a, 4b, 4c, 4d, 4e ... Gate line (scanning line), 5 ... Auxiliary capacity, 16, DESCRIPTION OF SYMBOLS 17 ... Electrode, 20 ... Inspection signal application means, 30 ... Data signal application means, 100 ... Matrix structure, 111a ... Short-circuit defect, 111b ... Opening defect, d1, d2 ... Pulse width, L ... High level, T ... Period

Claims (15)

A structure in which a plurality of gate lines arranged in the X-axis direction and a plurality of data lines arranged in the Y-axis direction intersect with each other, a switching element arranged at the intersection, and the switching element And a matrix structure inspection method comprising pixel electrodes arranged in a row,
The gate line is provided with a signal for controlling the conduction state of the switching element,
A test signal having a frequency substantially the same as that of a scan signal applied to the gate line during normal operation in the matrix structure and having a narrow pulse width is applied to the gate line. Inspection method for matrix structure. The switching element controls signal transmission between the data line and the pixel electrode,
At least when a test signal is applied to the gate line, if the switching element is in a conductive state with respect to the data line, a drive level signal is applied to the pixel electrode,
The pulse width of the inspection signal is a pulse width that sets the driving state of the driving element supplied and driven to the pixel electrode via the switching element to an intermediate state that is a state between the maximum state and the minimum state. The inspection method for a matrix structure according to claim 1, wherein:   3. The matrix structure inspection method according to claim 1, wherein the high level of the inspection signal is a level that brings the switching element into a conductive state.   4. The matrix structure inspection method according to claim 1, wherein a pulse width of the inspection signal is 1/3 to 2/3 of a pulse width of the scanning signal. 5. When an inspection signal is applied to the gate line, the state of the driving element is detected,
5. The matrix structure inspection method according to claim 2, wherein whether or not the switching element is defective is determined based on the detection result. 6. The matrix structure is a component of a liquid crystal display device,
The drive element is a pixel having a liquid crystal sandwiched between the pixel electrode and a counter electrode,
The switching element is a thin film transistor,
A gate of the thin film transistor is connected to the gate line;
6. The matrix structure inspection method according to claim 1, wherein the thin film transistor controls an amount or level of a signal flowing from the data line to the pixel electrode.   The matrix structure inspection method according to claim 6, wherein the intermediate state of the driving element is a halftone display state in the pixel.   8. The matrix structure inspection method according to claim 1, wherein a pulse width of the inspection signal is set to a plurality of widths.   The matrix structure inspection method according to claim 1, wherein a pulse width of the inspection signal is changed. A structure in which a plurality of gate lines arranged in the X-axis direction and a plurality of data lines arranged in the Y-axis direction intersect with each other, a switching element arranged at the intersection, and the switching element An inspection apparatus having a matrix structure having pixel electrodes arranged in a row,
Inspection signal applying means for applying to the gate line an inspection signal having substantially the same frequency and a narrow pulse width as compared with the scanning signal applied to the gate line during normal operation in the matrix structure. An inspection apparatus having a matrix structure characterized by comprising:   Data signal applying means for applying, to the data line, a signal having the maximum level in the data signal applied to the data line during normal operation in the matrix structure when the inspection signal is applied to the gate line. The inspection apparatus with a matrix structure according to claim 10. The switching element in the matrix structure is one whose conduction state is controlled by a signal applied to the gate line,
The pulse width of the inspection signal is a pulse width that sets the driving state of the driving element supplied and driven to the pixel electrode via the switching element to an intermediate state that is a state between the maximum state and the minimum state. 12. The inspection apparatus having a matrix structure according to claim 10, wherein the inspection apparatus has a matrix structure.   13. The matrix structure inspection apparatus according to claim 10, wherein the inspection signal applying unit includes a probe that is capacitively coupled to a gate line or an electrode of the gate line in the matrix structure. . A structure in which a plurality of gate lines arranged in the X-axis direction and a plurality of data lines arranged in the Y-axis direction intersect with each other, a switching element arranged at the intersection, and the switching element A manufacturing method of a matrix structure having pixel electrodes arranged
The gate line is provided with a signal for controlling the conduction state of the switching element,
Compared with the scanning signal given to the gate line at the time of normal operation in the matrix structure, an inspection signal having a substantially same frequency and a narrow pulse width is applied to the gate line,
At least when a test signal is applied to the gate line, if the switching element is in a conductive state with respect to the data line, a drive level signal is applied to the pixel electrode,
When the inspection signal and the drive level signal are applied, the state of the drive element driven through the pixel electrode is detected,
A method of manufacturing a matrix structure, wherein a part of the matrix structure is corrected or formed based on the detection result. The pulse width of the inspection signal is a state between the maximum state and the minimum state of the drive element driven through the switching element and the pixel electrode when the drive level signal is applied. 15. The inspection method for a matrix structure according to claim 14, wherein the pulse width is an intermediate state.

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