JP2006275547A - Device and method for detecting defect of matrix structure - Google Patents

Device and method for detecting defect of matrix structure Download PDF

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JP2006275547A
JP2006275547A JP2005090777A JP2005090777A JP2006275547A JP 2006275547 A JP2006275547 A JP 2006275547A JP 2005090777 A JP2005090777 A JP 2005090777A JP 2005090777 A JP2005090777 A JP 2005090777A JP 2006275547 A JP2006275547 A JP 2006275547A
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matrix structure
defect detection
defect
signal
detection apparatus
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Toshihiro Hayashi
智弘 林
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Seiko Epson Corp
セイコーエプソン株式会社
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Abstract

<P>PROBLEM TO BE SOLVED: To facilitate detection of a point-like defect in a matrix structure. <P>SOLUTION: The device comprises: a structure in which a plurality of gate lines 4a-4e arranged along a first direction X and a plurality of data lines 3a, 3b arranged along a second direction Y intersect like a grid; a switching element disposed at each intersection part; and a driving element driven and controlled by a signal flowing through the switching element. The device is provided with: a gate signal application means 30 applying to the plurality of gate lines 4a-4e a signal for making the switching element into a conduction state; a data signal application means 20 applying to the plurality of data lines 3a, 3b a driving signal activating the driving element; a press means 210 pressing the matrix structure; and a synchronization means 203 synchronizing the application of the driving signal by the data signal application means 20 with the pressing by the press means 210. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a defect detection method having a matrix structure and a defect detection apparatus having a matrix structure.

  Conventionally, TFT liquid crystal display devices that control the display of each pixel region of a liquid crystal display device using thin film transistors (TFTs) are applied to flat-screen TVs, personal computer monitors, PDA (Personal Digital Assistants), mobile phones, and the like. As a result, the market is expanding rapidly. Further, in a manufacturing process of a display device such as a TFT liquid crystal display device, display defects such as pixel defects and luminance unevenness are visually inspected. This visual inspection makes it difficult to detect a single pixel defect, and is troublesome, which hinders cost reduction and quality improvement of the liquid crystal display device. In recent years, a method for mechanically detecting a display defect of a liquid crystal display device has been proposed. For example, a technique has been devised in which a display area of a liquid crystal display device is imaged with a camera and luminance unevenness of the liquid crystal display device is determined (for example, see Patent Document 1).

Further, each color dot constituting each pixel dot of the liquid crystal display device is imaged by a line sensor having a pixel pitch of 1 / n (n = 30) of the pixel dot pitch, and the captured image is analyzed. A method of selecting the resolution of an image in accordance with the type of display defect and detecting a target type of display defect from the image with the selected resolution has also been devised (for example, see Patent Document 2).
JP-A-6-325905 JP 2004-279239 A

However, the following problems exist in the conventional technology as described above.
Each pixel of the liquid crystal display device has a structure in which liquid crystal is sandwiched between a pixel electrode and a counter electrode. In some cases, conductive foreign matter exists between the pixel electrode and the counter electrode. Here, when the size of the conductive foreign matter is larger than the distance (cell gap) between the pixel electrode and the counter electrode, the pixel electrode and the counter electrode are always short-circuited by the conductive foreign matter. Accordingly, when the conductive foreign matter is larger than the cell gap, the pixel always shows an abnormal (defective) display, resulting in a pixel defect.

  However, particularly in a high-definition TFT liquid crystal display device or the like, dot-like pixel defects (dot-like defects) in the entire display area as described above are not conspicuous and the probability of being missed by visual inspection or the like increases. In addition, it is difficult to detect a point-like defect even in a method of automatic detection using a camera or the like, as in the methods described in Patent Documents 1 and 2 above. Therefore, in order to detect pixel defects with high accuracy, the automatic detection device becomes expensive, and the manufacturing cost of the liquid crystal display device increases.

  In addition, when the conductive foreign matter is smaller than the cell gap, a short circuit defect occurs when the cell gap is reduced by applying pressure (external force) to the pixel in the matrix structure. Therefore, when the conductive foreign matter is larger than the cell gap, the pixel is always abnormally displayed, but when the conductive foreign matter is smaller than the cell gap, the pixel is abnormally displayed only when pressure is applied. Detection becomes difficult. Here, a method of pressing the display screen (pixel) with a pressure member or the like to apply pressure to the pixel can be considered, but the pixel to be inspected may become a shadow of the pressure member, increasing the difficulty of inspection. I am letting.

The present invention has been made in consideration of the above points, and provides a matrix structure defect detection method and a matrix structure defect detection apparatus that can easily detect dot-like defects in a matrix structure. Objective.
Further, according to the present invention, a point-like defect generated when pressure or the like is applied to the matrix structure can be made into a linear defect, and the defect can be detected easily and with high accuracy at low cost. It is an object of the present invention to provide a matrix structure defect detection method and a matrix structure defect detection apparatus.

In order to achieve the above object, the present invention employs the following configuration.
The matrix structure defect detection apparatus of the present invention has a structure in which a plurality of gate lines arranged along the first direction and a plurality of data lines arranged along the second direction intersect in a lattice pattern, A device used for detecting a defect of a matrix structure having a switching element arranged at each intersection and a driving element driven and controlled by a signal flowing through the switching element, Gate signal applying means for applying a signal for turning on the switching element to all of the gate lines or all of the gate lines in a partial region of the matrix structure, and all of the plurality of data lines or the matrix Data signal applying means for applying a drive signal for operating the drive element for all data lines in a partial region of the structure, and pressurizing for applying pressure to the matrix structure Stage and the application of the drive signal by the data signal application means, the is characterized in further comprising a synchronizing means for synchronizing the pressurization by the pressurizing means.

Therefore, in the defect detection apparatus having the matrix structure according to the present invention, for example, the gate signal applying unit applies a predetermined signal to all the gate lines to make all the switching elements conductive. In this state, for example, when the data signal applying means applies a predetermined signal to all the data lines, all the drive elements (pixels, etc.) can be brought into an operation state (ON state). Here, by pressurizing the matrix structure by the pressurizing means, it is possible to cause a short circuit defect due to conductive foreign matter that does not occur without pressure.
When one drive element has a short-circuit defect, the short circuit causes one data line to be short-circuited to a short-circuited drive element (such as ground) via a conductive switching element. As a result, a short-circuit current flows and the state (potential or current value) of the one data line changes. Due to the change in the state of the data line, all the drive elements that are driven and controlled by the data line become non-operating. On the other hand, all the drive elements that are driven and controlled by the data lines that do not change state are in the operating state. By detecting these states, one short-circuit defect (dot-like defect) can be easily detected with high accuracy as a linear pattern.
Further, according to the present invention, it is possible to remove noise such as ambient light that is asynchronous with the synchronization timing by the synchronization means, and it is possible to detect a linear pattern indicating a dot-like short-circuit defect with higher accuracy.

As the pressurizing means, a configuration in which the matrix structure is linearly pressed can be suitably employed.
In this configuration, it is possible to pressurize a plurality of driving elements at once and detect defects efficiently.
In this case, it is preferable that the pressurizing unit pressurizes linearly in the second direction.
Thereby, it is possible to more effectively pressurize the plurality of drive elements arranged along the data line to which the drive signal is applied in synchronization with the pressurization over the entire length of the pressurizing unit.

In the defect detection apparatus having a matrix structure according to the present invention, it is preferable to employ a configuration in which the length of the pressing unit in the second direction is shorter than the length of the range in which the driving elements are arranged in the second direction. it can.
Therefore, in this configuration, even when a linear pattern exists directly under the pressurizing means (contact location), a gap can be formed between the range where the drive elements are arranged and the pressurizing means. For example, a linear pattern indicating the presence of a defect can be visually observed through the gap.

Moreover, in the defect detection apparatus having a matrix structure according to the present invention, a configuration in which the pressurizing means has light permeability can be suitably employed.
According to the present invention, when the driving element is an optical element such as a pixel, it can be avoided that the state of the optical element becomes a shadow of the pressure member and cannot be detected. That is, it is possible to visually recognize the bright and dark state of the pixel or the like with a linear pattern that passes through the pressure member while pressing the pixel or the like to be inspected with the transparent pressure member.

In the defect detection apparatus having a matrix structure according to the present invention, a configuration in which the pressurizing unit relatively moves in the arrangement direction of the data lines with respect to the matrix structure can be suitably employed.
According to the present invention, it is possible to sequentially pressurize data lines (and driving elements connected to the data lines) in the matrix structure sequentially with the relative movement of the pressurizing means, and all the data lines are efficiently used. Can be pressurized.

In addition, the defect detection apparatus having a matrix structure according to the present invention may include a detection unit (camera or the like) that detects a phenomenon related to a state change (potential or the like) of the data line that occurs due to a short circuit caused by pressurization of the pressurization unit. It can be suitably employed.
According to the present invention, when a short-circuit defect occurs, the single short-circuit defect can be converted into a defect (linear defect) for one data line, and the linear defect can be detected by the detecting means. . Here, when the driving element is a pixel, an imaging unit can be applied as the detecting unit. The detecting means may detect a change in the state (potential or current value of the drive signal) of each data line. Therefore, according to the present invention, it is possible to easily and accurately detect a short-circuit defect caused by a conductive foreign material that does not occur when no pressure is applied.

In the defect detection apparatus having a matrix structure according to the present invention, the data signal applying unit is a driving signal for switching between an operating state and a non-operating state of the driving element when a short circuit occurs due to pressurization of the pressurizing unit. The structure which applies can be employ | adopted suitably.
According to the present invention, it is possible to detect a short circuit defect or the like due to a conductive foreign object easily and with high sensitivity based on a change in the operating state of the drive element.

In the defect detection apparatus having a matrix structure according to the present invention, the driving element includes a liquid crystal sandwiched between a pixel electrode and a counter electrode, and the defect is applied to the pixel electrode by pressing the matrix structure. When the distance between the counter electrode and the counter electrode becomes small, the conductive foreign matter between them can be used.
According to the present invention, when there is a conductive foreign material that is smaller than the distance between the pixel electrode and the counter electrode, an unsteady short-circuit defect can be easily and accurately detected by the conductive foreign material. . That is, when pressure is applied from the outside to the matrix structure, the distance between the pixel electrode and the counter electrode is narrowed. Here, when the small conductive foreign matter exists between the pixel electrode and the counter electrode, the pixel electrode and the counter electrode are short-circuited by the conductive foreign matter. This short circuit causes a change in the state of the data line. As a result, the drive signal applied to the data line is changed from a signal for setting the drive element to an operating state to a signal for setting the non-operating state. Then, all the drive elements that are driven and controlled by the data line are in a non-operating state. On the other hand, when there is no short circuit defect, all the drive elements are in an operating state. By these, this invention can detect the short circuit defect by the conductive foreign material which arises at the time of pressurization simply and precisely.

  On the other hand, the defect detection method having a matrix structure according to the present invention has a structure in which a plurality of gate lines arranged along the first direction and a plurality of data lines arranged along the second direction intersect in a lattice pattern. And a method of detecting a defect in a matrix structure comprising a switching element arranged at each intersection and a driving element driven and controlled by a signal flowing through the switching element, Applying a signal for turning on the switching element to all or all of the gate lines in a partial region of the matrix structure; and all of the plurality of data lines or partial regions of the matrix structure. For all of the data lines, the method includes a step of applying a drive signal for operating the drive element, and a step of pressurizing the matrix structure in synchronization with the application of the drive signal. It is characterized in.

Therefore, in the defect detection method of the matrix structure according to the present invention, for example, a predetermined signal is applied to all the gate lines to make all the switching elements conductive. In this state, for example, by applying a predetermined signal to all the data lines, all the drive elements (pixels and the like) can be brought into an operation state (ON state). Here, by pressurizing the matrix structure, it is possible to cause a short circuit defect or the like due to conductive foreign matter that does not occur without pressure.
When one drive element has a short-circuit defect, the short circuit causes one data line to be short-circuited to a short-circuited drive element (such as ground) via a conductive switching element. As a result, a short-circuit current flows and the state (potential or current value) of the one data line changes. Due to the change in the state of the data line, all the drive elements that are driven and controlled by the data line become non-operating. On the other hand, all the drive elements that are driven and controlled by the data lines that do not change state are in the operating state. By detecting these states, one short-circuit defect (dot-like defect) can be easily detected with high accuracy as a linear pattern.
Further, according to the present invention, it becomes possible to remove noise such as ambient light asynchronous to the synchronization timing in the synchronization step, and it is possible to detect a linear pattern indicating a dot-like short-circuit defect with higher accuracy.

Moreover, in the defect detection method of the matrix structure of this invention, it is preferable to pressurize the said matrix structure linearly.
Thereby, in this invention, a several drive element can be pressurized collectively and it becomes possible to detect a defect efficiently.
In this case, it is preferable that the pressurizing unit pressurizes linearly in the second direction.
Thereby, it is possible to more effectively pressurize the plurality of drive elements arranged along the data line to which the drive signal is applied in synchronization with the pressurization over the entire length of the pressurizing unit.

In the defect detection method for a matrix structure according to the present invention, it is preferable that the pressurization is performed while being relatively moved with respect to the matrix structure in the arrangement direction of the data lines.
As a result, in the present invention, it becomes possible to sequentially pressurize the data lines (and drive elements connected to the data lines) in the matrix structure sequentially with the relative movement of the pressurization, and all the data lines are It can pressurize efficiently.

Embodiments of a matrix structure defect detection apparatus and a matrix structure defect detection method according to the present invention will be described below with reference to FIGS.
(First embodiment)
FIG. 1 is a circuit diagram showing an outline of a matrix structure and a defect detection apparatus having the matrix structure according to an embodiment of the present invention. The matrix structure of this embodiment is used for an active matrix liquid crystal display device driven by TFTs.

  The matrix structure 100 of this embodiment includes a plurality of data lines 3a and 3b arranged in the Y-axis direction (second direction) and a plurality of gate lines 4a and 4b arranged in the X-axis direction (first direction). It has a structure in which 4c, 4d, and 4e intersect in a lattice pattern. A TFT (switching element) 2 is arranged at each intersection of the data lines 3a, 3b and the gate lines 4a, 4b, 4c, 4d, 4e in the matrix structure 100. The TFT 2 is an n-channel TFT, for example. The sources of the TFTs 2 arranged in the vicinity of the data lines 3a and 3b are electrically connected to the data lines 3a and 3b. The gates of the TFTs 2 arranged in the vicinity of the gate lines 4a, 4b, 4c, 4d, and 4e are electrically connected to the gate lines 4a, 4b, 4c, 4d, and 4e.

  Further, the liquid crystal pixel 1 is arranged at each intersection of the data lines 3a and 3b and the gate lines 4a, 4b, 4c, 4d, and 4e in the matrix structure 100. The liquid crystal pixel 1 has a configuration in which liquid crystal is sandwiched between a pixel electrode 1a and a counter electrode 1b. The pixel electrode 1a is electrically connected to the drain of the TFT2. A reference potential (for example, 0 volts) is applied to the counter electrode 1b. Further, an auxiliary capacitor 5 is electrically connected to the drain of each TFT 2.

  In the matrix structure 100 having such a configuration, a plurality of liquid crystal pixels 1 whose brightness and darkness are driven and controlled by the TFTs 2 are arranged like grids along the data lines 3a and 3b, and display an image of a desired shape. can do. In the image display, image signals are supplied to the data lines 3a and 3b, and scanning line signals are supplied to the gate lines 4a, 4b, 4c, 4d, and 4e. For example, each TFT 2 is turned on (conductive state) for a certain period by a pulsed scanning line signal sequentially applied to the gate lines 4a, 4b, 4c, 4d, and 4e. During this fixed period, the image signal applied to the data lines 3a and 3b passes through the TFT 2 and is applied to the pixel electrode 1a. The image signal (potential) applied to the pixel electrode 1a is held by the auxiliary capacitor 5 for a certain period. The liquid crystal sandwiched between the pixel electrode 1a and the counter electrode 1b changes the orientation and order of the molecular assembly depending on the applied voltage level, modulates the light transmittance, and enables gradation display. As a result, the liquid crystal pixel 1 has substantially constant brightness according to the image signal for a certain period. In FIG. 1, the image signal supply unit and the scanning line signal supply unit are not shown. Further, a color image is displayed by overlaying a color filter on each liquid crystal pixel 1.

FIG. 1 also shows a defect detection apparatus having a matrix structure according to an embodiment of the present invention.
The defect detection apparatus having the matrix structure includes a data signal applying unit 20, a gate signal applying unit 30, a pressure roller (pressure unit) 210 shown in FIG. . The data signal applying means 20 can apply drive signals to all of the data lines 3a and 3b. Here, the drive signal is one of the image signals, and is a signal that finally turns on the liquid crystal pixel 1 (drive element) (operation state). In other words, the driving signal is a signal that is in a state close to a threshold state where the operation / non-operation (dark / bright) state of the liquid crystal pixel 1 is switched, and causes the operation state.

  The data signal applying means 20 may be configured to have current limiting means 21a and 21b for each data line 3a and 3b. The current limiting units 21a and 21b are, for example, current limiters, and limit current values that flow out (or flow in) from the data signal applying unit 20 to the data lines 3a and 3b. Moreover, you may comprise each current limiting means 21a and 21b with a resistor.

  The gate signal applying unit 30 can apply a signal (scanning line signal) for turning on the TFT 2 (conduction state) to all of the gate lines 4a, 4b, 4c, 4d, and 4e. Therefore, the gate signal applying means 30 has a terminal electrically connected to the gate lines 4a, 4b, 4c, 4d, and 4e, and a means for outputting a signal for turning on the terminal.

  The pressure roller 210 is a cylindrical member that pressurizes the matrix structure 100, and the cell gap d1 (see FIG. 5) of some or all of the liquid crystal pixels 1 that is driven and controlled by one data line 3a, 3b in the matrix structure 100. 3) is preferably pressurized so that it becomes smaller than a predetermined value at the same time. The pressure roller 210 is disposed along the Y-axis direction and is rotatable about an axis parallel to the Y-axis, and pressurizes the surface of the matrix structure 100 under the control of the synchronization unit 203. In such a state, it rolls in the X-axis direction and can be moved up and down in the Z direction. The length of the pressure roller 210 is shorter than the length of the range in which the liquid crystal pixels 1 are arranged along the data lines 3a and 3b. Specifically, the matrix structure 100 is longer than half the length of the matrix structure 100 in the Y-axis direction so that the entire surface of the matrix structure 100 can be pressed by rotating the pressure roller 210 twice. Is shorter than the length in the Y-axis direction.

Further, in the matrix structure 100 shown in FIG. 1, there is one short-circuit defect (defect) 11 near the intersection of the data line 3a and the gate line 4d.
FIG. 3 is a schematic cross-sectional view showing an example of the short-circuit defect 11. The short-circuit defect 11 is composed of a conductive foreign material 11a made of a conductive member. The short-circuit defect 11 is formed, for example, in the manufacturing process of the matrix structure 100, and is made of a metal pattern residue forming a wiring or the like. Further, there is a case where a short-circuit defect 11 is formed due to the mixing of minute conductive foreign matter 11a in the manufacturing process.

  Further, as shown in FIG. 3, the conductive foreign material 11a forming the short-circuit defect 11 exists between the pixel electrode 1a and the counter electrode 1b. The size (height) d2 of the conductive foreign material 11a is smaller than the cell gap d1 that is the distance between the pixel electrode 1a and the counter electrode 1b. The cell gap d1 is 4 μm, for example, and the size d2 of the conductive foreign material 11a is 2 μm to 3 μm, for example. Therefore, in a state where the matrix structure 100 is not subjected to any pressure, the conductive foreign material 11a does not short-circuit between the pixel electrode 1a and the counter electrode 1b. Therefore, no pixel failure or the like due to the short-circuit defect 11 occurs, and the entire matrix structure 100 operates normally.

  On the other hand, when an external force is applied to the matrix structure 100, the pixel electrode 1a and the counter electrode 1b may receive the pressure F. This pressure F reduces the cell gap d1. When the cell gap d1 becomes smaller than the size d2 of the conductive foreign material 11a, the conductive foreign material 11a short-circuits between the pixel electrode 1a and the counter electrode 1b. As a result, the liquid crystal pixel 1 formed by the shorted pixel electrode 1a, the counter electrode 1b, and the like becomes a pixel defect (pixel defect).

In the matrix structure 100 of the present embodiment, the liquid crystal pixel 1 is in a normal state where no signal is applied to the gate lines 4a, 4b, 4c, 4d, and 4e (that is, when the potentials of the pixel electrode 1a and the counter electrode 1b are the same). It is assumed that a normally white display device in which is in a bright (white) state is formed. Therefore, in a non-normal state where signals are applied to the gate lines 4a, 4b, 4c, 4d, 4e and the data lines 3a, 3b, the liquid crystal pixel 1 is in a dark (black) state.
Therefore, when the liquid crystal pixel 1 becomes defective due to the short-circuit defect 11, the liquid crystal pixel 1 displays only “white”.

Next, a matrix structure defect detection method using the matrix structure defect detection apparatus according to the present embodiment will be described with reference to FIGS.
FIG. 4 is an enlarged view showing the periphery of the short-circuit defect 11 in the matrix structure 100 shown in FIG.
FIG. 5 is a diagram illustrating an example of a state in which the short-circuit defect 11 is displayed as a linear defect in the present embodiment.

  In the defect detection method of this matrix structure, one short-circuit defect 11 is detected as a linear defect. For example, as shown in FIG. 5, in the matrix structure 100, one short-circuit defect 11 that is a defect related to the intersection of the data line 4d and the data line 3a is changed to a linear defect that is a defect related to the data line 3a. To detect. Here, the defect regarding the data line 3a means a state displayed by a plurality of liquid crystal pixels 1 that are driven and controlled by the TFT 2 connected to the data line 3a. In other words, if it is normal, the pixel that should be displayed as “black” is displayed as “white”, and the erroneously displayed pixels are connected in a line along the data line 3a. Specifically, one short-circuit defect 11 is converted into a linear defect as follows.

  First, a predetermined scanning line signal is applied to all the gate lines 4a, 4b, 4c, 4d, and 4e by the gate signal applying means 30. This scanning line signal is a signal for turning on (conducting) all TFTs connected to the gate lines 4a, 4b, 4c, 4d, and 4e.

  Next, a drive signal is applied to each of the data lines 3a and 3b by the data signal applying means 20. As described above, the drive signal is a signal that finally turns on the liquid crystal pixel 1 (black). For example, the liquid crystal pixel 1 is turned on (black) when the potential difference between the pixel electrode 1a and the counter electrode 1b is 2.9 volts or more, and is turned off (white) when the potential difference is less than 2.9 volts. Shall. In this case, the ON / OFF threshold value of the liquid crystal pixel 1 is 2.9 volts. Therefore, the drive signal is, for example, a direct current of 3 volts.

At this time, the drive signal is applied to the data line in synchronization with the pressure applied to the matrix structure 100 by the pressure roller 210.
Specifically, as illustrated in FIG. 2, after the pressure roller 210 is positioned on the + Y side with respect to the matrix structure 100, the synchronization unit 203 is linearly formed along the Y-axis direction by the pressure roller 210. While pressing the surface of the matrix structure 100, the matrix structure 100 is moved from the −X side to the + X side while rolling in the X-axis direction. As a result, the linear pressure region moves in the X-axis direction as the pressure roller 210 rolls. When the pressure roller 210 reaches the + X side end of the matrix structure 100, the pressure roller 210 is raised to the + Z side and then moved stepwise to the -Y side. Then, after the matrix structure 100 is lowered to a position where pressure is applied to the matrix structure 100 (position indicated by a two-dot chain line in FIG. 2), the pressure roller 210 is rolled to the −X side.

  Then, the synchronization unit 203 controls the current so that the drive signal is synchronously applied only to the data line (the data line 3a in FIG. 2) connected to the liquid crystal pixel 1 pressed by the pressure roller 210. Control means 21a, 21b.

  Here, when there is no pixel defect in the liquid crystal pixel 1 pressed by the pressure roller 210, a scanning line signal is applied to the gate lines 4a, 4b, 4c, 4d, and 4e, and further, a driving signal is applied to the data line. Is applied, the liquid crystal pixel 1 connected to the data line to which the drive signal is applied becomes “black” in the ON state.

  On the other hand, the matrix structure 100 of this embodiment has a short-circuit defect 11. Then, as described above, a scanning line signal is applied to all the gate lines 4a, 4b, 4c, 4d, and 4e, and a drive signal is sequentially applied to each data line, as shown in FIG. When pressure F by the pressure roller 210 is applied in the vicinity of the short-circuit defect 11 of the structure 100, the cell gap d1 is reduced by the pressure F, and the conductive foreign material 11a is short-circuited between the pixel electrode 1a and the counter electrode 1b. It becomes.

  Then, as shown in FIG. 4, since the counter electrode 1b is connected to the ground and zero volt is applied, the pixel electrode 1a related to the short-circuit defect 11 is also almost zero volt. As a result, the liquid crystal pixel 1 related to the short-circuit defect 11 becomes “white” in the OFF state.

  Here, the TFT 2a for driving and controlling the liquid crystal pixel 1 related to the short-circuit defect 11 is in a conductive state by the scanning line signal of the gate line 4d, and the driving signal of the data line 3a is applied to the source terminal. Therefore, the TFT 2a passes a large current (short-circuit current) from the source to the drain (further ground). As a result, the potential of the data line 3a connected to the source of the TFT 2a approaches zero volts, which is the potential of the counter electrode 1b. It can be considered that this potential change is caused by the current limiting function of the current limiting unit 21a in the data signal applying unit 20.

  When the potential of the data line 3a approaches zero volts, the source potential of all the TFTs 2 connected to the data line 3a (for example, TFT 2b in FIG. 4) approaches zero volts. As a result, all the liquid crystal pixels 1 that are driven and controlled by the TFTs 2 connected to the data lines 3a become “white” in the OFF state. That is, as shown in FIGS. 4 and 5, all of the pixel electrodes 1 arranged in the vicinity of the data line 3a are displayed in “white”, and all of the other electrode pixels 1 are displayed in “black”. Since this state is maintained for a certain period by the auxiliary capacitor 5, it is possible to detect a pixel defect by visually observing the linear “white” at a position away from the pressure roller 210.

  As described above, according to the matrix structure defect detection method and the matrix structure defect detection apparatus of the present embodiment, when there is one short-circuit defect 11, all of the drive lines controlled to the data lines 3a in the vicinity of the short-circuit defect 11 are controlled. Since the liquid crystal pixel 1 is displayed as “white” and all the liquid crystal pixels 1 that are driven and controlled by all the data lines 3b other than the data line 3a are displayed as “black” at the same time, the minute short-circuit defect 11 is displayed as “white”. About the short-circuit defect 11 in which only one liquid crystal pixel 1 short-circuited by the short-circuit defect 11 is displayed as “white spot defect” in the prior art because it can be conspicuous as a “line defect”. Then, it can be easily detected using visual observation or imaging means.

  In the present embodiment, the pressure applied by the pressure roller 210 and the application of the drive signal to the data line are synchronized, so it is possible to remove noise such as disturbance light that is not synchronized with the synchronization timing. It is possible to detect the linear pattern indicating the above-described dot-like short-circuit defect with higher accuracy.

Further, in the present embodiment, since the matrix structure 100 is pressed linearly, the plurality of liquid crystal pixels 1 can be pressed collectively and defects can be detected efficiently. In particular, in this embodiment, since the matrix structure 100 is pressed linearly along the alignment direction of the liquid crystal pixels 1 and the Y-axis direction that is the direction in which the data lines 3a and 3b extend, the length of the pressure roller 210 is increased. It becomes possible to pressurize the liquid crystal pixel 1 over the whole, and the defect detection work can be carried out effectively.
Furthermore, in the present embodiment, the pressure roller 210 is formed shorter than the length of the arrangement range of the liquid crystal pixels 1 in the Y-axis direction, so that a gap is formed between the arrangement range and the pressure roller 210. Is possible. Therefore, even when a linear pattern is displayed immediately below the pressure roller 210, the display state can be easily detected from this gap.

  In the present embodiment, since the pressure roller 210 moves relative to the matrix structure 100, the liquid crystal element 1 can be continuously pressed, and all the data lines and the liquid crystal connected to the data lines can be pressed. The pixel 1 can be efficiently pressurized. In particular, in this embodiment, since the pressure roller 210 rolls and presses the surface of the matrix structure 100, no force other than the direction perpendicular to the matrix structure 100 is applied to prevent the matrix structure 100 from being damaged. In addition, the entire surface of the matrix structure 100 can be easily pressurized with a simple configuration.

  In the above embodiment, the gate signal applying unit 30 applies a predetermined scanning signal to all the gate lines 4a, 4b, 4c, 4d, and 4e. For example, a partial region of the matrix structure 100 is used. A predetermined scanning signal may be applied to all of the gate lines (4a, 4b, etc.) in (for example, half of the display area of the matrix structure 100). Then, the presence / absence of the short-circuit defect 11 is detected for the partial area by the above method, and then the presence / absence of the short-circuit defect 11 is detected for the other area by the above-described method. Also by these, the presence or absence of the short-circuit defect 11 can be detected for the entire matrix structure 100.

(Second Embodiment of Defect Detection Device)
Next, a second embodiment of the defect detection apparatus according to the present invention will be described with reference to FIG. In this figure, the same reference numerals are given to the same elements as those of the first embodiment shown in FIGS. 1 to 5, and the description thereof is omitted.

In the present embodiment, in addition to the configuration of the above-described embodiment, an imaging unit 201, a pattern recognition unit 202, and a control unit 204 are provided.
The imaging means 201 is constituted by, for example, a CCD camera. The subject of the imaging unit 201 is a display area of the matrix structure 100. According to this configuration example, since the dot-like defect is displayed as a linear image pattern in the matrix structure 100, it is possible to detect the dot-like defect with high accuracy without increasing the resolution of the imaging unit 201. it can.

  The pattern recognition unit 202 recognizes a pattern as to whether or not there is a linear pattern (such as the above “black linear defect”) in the image input by the imaging unit 201. Therefore, according to this configuration example, it is possible to avoid erroneous detection even when the input image of the imaging unit 201 includes point-like noise, and to detect point-like defects with high accuracy.

The synchronizing unit 203 synchronizes the timing of signal application by the gate signal applying unit 30, the timing of applying the drive signal by the data signal applying unit 20, and the timing at which the imaging unit 201 captures (detects) an image. The control means 204 controls the operation of the entire defect detection apparatus having the matrix structure.
In the present embodiment, it is possible to eliminate the oversight of visual defect detection and to perform more reliable defect detection.

  In the first and second embodiments, one short-circuit defect 11 is detected as a “white linear defect” formed by the display of a plurality of liquid crystal pixels 1 connected in a straight line. A detection method can also be used. For example, the short-circuit defect 11 may be detected by detecting that the potential of the data line 3a has changed due to the short-circuit defect 11. Alternatively, the short-circuit defect 11 may be detected by detecting that the value of the current flowing through the data line 3a has changed due to the short-circuit defect 11. Each of the current limiting units 21a and 21b of the data signal applying unit 20 may have a function of detecting these potential changes or current value changes (changes in the state of the data lines). Even in this way, the short-circuit defect 11 can be easily detected.

  7 and 8 are waveform diagrams showing examples of scanning line signals for turning on all the TFTs 2 of the matrix structure 100 in this embodiment. In other words, the scanning line signal is an output signal of the gate signal applying unit 30 in the defect detection apparatus having the matrix structure according to the present embodiment. In the waveform diagrams of FIGS. 7 and 8, the vertical axis represents voltage and the horizontal axis represents time.

  The scanning line signal shown in FIG. 7A is a DC voltage of 8 volts. This DC voltage is not limited to 8 volts, but may be any voltage as long as the TFT 2 becomes conductive. Therefore, the TFT 2 to which the scanning line signal is applied to the gate is constantly in a conductive state. In addition, the “conducting state” here does not need to have a resistance (or impedance) of approximately 0Ω, and may be a state in which at least a current for driving and controlling the liquid crystal pixel 1 flows.

  The scanning line signals shown in FIGS. 7B and 7C are rectangular wave voltages. This rectangular wave voltage is a signal having a period during which the TFT 2 is turned on every unit time. That is, the TFT 2 is turned on during the period of 8 volts, but the TFT 2 is turned off during the period of 0 volts. Then, the scanning line signal shown in FIG. 7C has a shorter period of time for the conduction state per unit time than that shown in FIG. 7B. As described above, even when the period in which the TFT 2 is in the non-conducting state is every unit time, the state of the liquid crystal pixel 1 can be maintained by the charge charged in the auxiliary electrode 5 during the conducting state. Therefore, the scanning line signal shown in FIGS. 7B and 7C can have the same effect as the scanning line signal shown in FIG.

  Here, the minimum value of the period in which the scanning line signal is turned on per unit time shown in FIG. 7C is the peak value and period of the scanning line signal, the ON resistance characteristics of the TFT 2, the capacitance of the auxiliary electrode 5, and the pixel. The driving voltage and leakage current of the electrode 1, the number of TFTs 2 connected to one data line 3a, 3b, the waveform of the driving signal output to the data lines 3a, 3b by the data signal applying means 20, etc. .

  The scanning line signal shown in FIG. 8 is a rectangular wave AC voltage. Even with such an AC voltage, since the TFT 2 can be turned on every unit time, the same effect as the scanning line signal shown in FIG. 7 can be exerted.

  9 and 10 are waveform diagrams illustrating examples of drive signals applied to the data lines 3a and 3b in the matrix structure 100 in the present embodiment. In other words, this drive signal is an output signal of the data signal applying means 20 in the defect detection apparatus having the matrix structure according to the present embodiment. In the waveform diagrams of FIGS. 9 and 10, the vertical axis represents voltage and the horizontal axis represents time.

  In FIG. 9A, the drive signal indicated by the solid line is DC 3 volts. The dotted line indicates 2.9 volts, which is an example of a potential serving as a threshold value for separating the bright and dark states of the liquid crystal pixel 1. That is, when the potentials of the data lines 3a and 3b are set to 2.9 volts or more, the liquid crystal pixels 1 that are driven and controlled by the data lines 3a and 3b display “black”. On the other hand, when the potential of the data lines 3a and 3b is set to less than 2.9 volts, the liquid crystal pixel 1 that is driven and controlled by the data lines 3a and 3b displays “white”. Note that the potential difference between the pixel electrode 1a and the counter electrode 1b becomes substantially equal to the potential of the data lines 3a and 3b by the scanning line signals shown in FIGS. Therefore, the drive signal shown in FIG. 9A is a signal that finally turns on the liquid crystal pixel 1 (black).

  FIG. 9B shows a state in which the potential of the drive signal is lowered due to the short-circuit defect 11. That is, an example is shown in which the potential of the data line 3a approaches the potential (0 volts) of the counter electrode 1b and becomes 2.8 volts due to the short-circuit defect 11. As a result, all of the TFTs 2 that are driven and controlled by the data line 3a are displayed as "white" as shown in FIG.

  Accordingly, since the drive signal shown in FIG. 9 has a potential close to the threshold value, a slight change in the potential of the drive signal due to the short-circuit current becomes a change exceeding the threshold value. Due to the change exceeding the threshold value, all the liquid crystal pixels 1 that are driven and controlled by the data line are barely switched from the ON state (black) to the OFF state (white). Therefore, the short-circuit defect 11 can be detected with high sensitivity by using the drive signal shown in FIG.

  FIG. 10A shows another example of the drive signal. The drive signal in FIG. 10A is a pulse wave. FIG. 10B shows the potentials of the data lines 3a and 3b to which the drive signal of FIG. 10A is applied. Charge is charged in the liquid crystal pixel 1 and the auxiliary capacitor 5 by the ON period of the pulse wave. The charged electric charge is discharged during the OFF period of the pulse wave. Thereby, the potential of the data lines 3a and 3b gradually decreases during the OFF period of the pulse wave. Here, the peak value of the pulse wave, the duty ratio, and the like may be set so that the minimum value of the potential of the data lines 3a and 3b is equal to or higher than a threshold value (2.9 volts).

  FIG. 10C shows a state where the potential of the drive signal is lowered due to the short-circuit defect 11. That is, due to the short-circuit defect 11, the potential drop rate of the data line 3a increases during the OFF period of the pulse wave. In the OFF period of the pulse wave, there is a period in which the potential of the data line 3a is equal to or lower than a threshold value (2.9 volts). During the period below this threshold, all of the TFTs 2 that are driven and controlled by the data line 3a display “white” as shown in FIG.

  Thus, the drive signal shown in FIG. 10 becomes a signal having a potential close to the threshold on the data line, and a slight change in the potential due to the short-circuit current becomes a change exceeding the threshold. Due to the change exceeding the threshold value, all the liquid crystal pixels 1 driven and controlled by the data line are barely turned from the ON state (black) to the OFF state (white). Therefore, the short-circuit defect 11 can be detected with high sensitivity by using the drive signal shown in FIG.

  In the drive signal shown in FIG. 10, the minimum value of the ON period of the pulse waveform is the peak value of the pulse waveform, the period, the mode of the scanning line signal, the ON resistance characteristics of the TFT 2, the capacity of the auxiliary electrode 5, and the drive of the pixel electrode 1. The voltage and leakage current are defined by the number of TFTs 2 connected to one data line 3a, 3b. For example, the integral value of the short-circuit current flowing in one cycle of the pulse waveform is the difference between the integral value of the waveform in FIG. 10B and the integral value of the waveform in FIG. The drive signal waveform may be determined in consideration of these factors.

(Liquid crystal display device)
FIG. 11 is a plan view showing a main part of a liquid crystal display device according to an application example of the present embodiment. The main part of this liquid crystal display device has a matrix structure in which defects are inspected by the matrix structure defect detection method and the matrix structure defect detection apparatus according to the present embodiment. In FIG. 11, the same components as those shown in FIG.

  The main part of the liquid crystal display device includes a TFT array substrate 7 having a configuration corresponding to the matrix structure 100. As shown in FIG. 11, a plurality of pixel electrodes 1a (contours are indicated by broken lines) made of a transparent conductive film such as indium tin oxide (hereinafter abbreviated as ITO) on the TFT array substrate 7. ) Are arranged in a matrix, and data lines 3 (the outline is indicated by a two-dot chain line) are provided along the side extending in the vertical direction on the paper surface of the pixel electrode 1a, and gate lines are provided along the side extending in the horizontal direction on the paper surface. (Scanning line) 4 and capacitive line 6 (both contours are indicated by solid lines) are provided.

  In the main part of the present liquid crystal display device, the gate line 4 includes a main gate line 4A intersecting with the plurality of data lines 3, and a branch gate line 4B extending from the main gate line 4A, and a polysilicon film. An L-shaped portion 8a intersecting the branch gate line 4B and the main gate line 4A is formed in the semiconductor layer (first capacitor electrode) 8 (contour is indicated by a one-dot chain line). That is, the L-shaped portion 8a intersects the main gate line 4A and the branch gate line 4B to form two channel regions.

  Contact holes 9 and 10 are formed at both ends of the L-shaped portion 8a of the semiconductor layer 8, and one contact hole 9 serves as a source contact hole that electrically connects the data line 3 and the source region of the semiconductor layer 8, and the other The contact hole 10 is a drain contact hole that electrically connects the drain electrode 110 (the outline is indicated by a two-dot chain line) and the drain region of the semiconductor layer 8. That is, the source contact hole 9 and the drain contact hole 10 are disposed on opposite sides of the gate line 4. Further, a pixel contact hole 12 for electrically connecting the drain electrode 110 and the pixel electrode 1a is formed at the end of the drain electrode 110 opposite to the side where the drain contact hole 10 is provided. .

  The TFT 2 in the main part of the present liquid crystal display device intersects the main gate line 4A and the branch gate line 4B at the L-shaped portion 8a of the semiconductor layer 8, and the semiconductor layer 8 and the gate line 4 intersect twice. Therefore, a TFT having two gates on one semiconductor layer, a so-called dual gate type TFT is formed. Further, the capacitor line 6 extends along the gate line 4 so as to pass through pixels arranged in the horizontal direction on the paper surface, and a branched part 6 a extends along the data line 3 in the vertical direction on the paper surface. Therefore, the storage capacitor 5 is formed by the semiconductor layer 8 and the capacitor line 6 along the data line 3. In the present embodiment, half of the branch gate line 4B is covered with the wide portion 3A in which the width of the data line 3 is increased, thereby suppressing light from entering the channel region of this portion.

  FIG. 12 is a view showing a cross-sectional structure of the TFT array substrate 7. As shown in FIG. 12, the TFT array substrate 7 has the glass substrate 41 as a supporting substrate, and the TFT 2 is formed on the inner surface via a base insulating film 42. The TFT 2 includes a gate line 4, a channel region 50 of the semiconductor layer 8 in which a channel is formed by an electric field from the gate line 4, a gate insulating film 44 that is an insulating thin film that insulates the gate line 4 and the semiconductor layer 8, data Line 3, source region 49 and drain region 51 of semiconductor layer 8 are provided.

  Further, on the glass substrate 41 including the gate line 4 and the gate insulating film 44, the first interlayer insulating layer 52 in which the source contact hole 9 leading to the source region 49 and the drain contact hole 10 leading to the drain region 51 are respectively formed. Is formed. That is, the data line 3 is electrically connected to the source region 49 through the source contact hole 9 that penetrates the first interlayer insulating layer 52. Further, a second interlayer insulating layer 53 in which the drain contact hole 10 leading to the drain region 51 is formed is formed on the data line 3 and the first interlayer insulating layer 51. That is, the drain region 51 is electrically connected to the drain electrode 110 and the pixel electrode 1a through the drain contact hole 10 penetrating the first interlayer insulating layer 52 and the second interlayer insulating layer 53. Further, an alignment film 54 that has been subjected to an alignment process in a certain rubbing direction Y by a rubbing process is provided on the second interlayer insulating layer 53 and the pixel electrode 1a. The alignment film 54 is a horizontal alignment film made of a polyimide-based polymer resin.

  The wide portion (light shielding layer) 3A and the capacitor line (light shielding layer) 6 function as a so-called black matrix that shields light from areas other than the display area of each pixel. That is, the wide portion 3A and the capacitor line 6 have a function of hiding the disclination portion, and incident light from the counter substrate 15 side enters the channel region 50, the source region 49, the drain region 51, and the like in the semiconductor layer 8 of the TFT 2. In addition to preventing intrusion, it has functions such as improving the contrast ratio and preventing color mixing of the color filter color material.

  In the main part of the present liquid crystal display device, the overlapping part (hatched part in FIG. 11) of the wide part 3A and the capacitor line 6 and the pixel electrode 1a is on the opposite side of the rubbing direction Y in the peripheral part of the pixel electrode 1a. A region overlapping with the peripheral portion (region where the disclination is large) is formed wider than the peripheral portion (region where the disclination is small) on the forward direction side in the rubbing direction Y. That is, the width of the overlapping portion b is wider than that of the overlapping portion a, and the width of the overlapping portion c is set wider than that of the overlapping portion d, so that the overlapping portion is asymmetric on the left and right and top and bottom. Note that the widths of these overlapping portions a, b, c, and d are determined according to the range of disclination that occurs in those portions.

  FIG. 13 is a plan view showing the overall configuration of the liquid crystal display device 40 having the TFT array substrate 7. That is, FIG. 13 shows the overall configuration of a liquid crystal display device 40 according to an application example of this embodiment. FIG. 14 is a cross-sectional view of the liquid crystal display device 40 shown in FIG.

  13 and 14, a sealing material 28 is provided on the TFT array substrate 7 along the edge thereof, and a light shielding film 29 as a frame is provided in parallel to the inside thereof. A data line driving circuit 130 and an external circuit connection terminal 31 are provided along one side of the TFT array substrate 7 in a region outside the sealing material 28, and the gate line driving circuit 32 is provided on two sides adjacent to the one side. It is provided along. Needless to say, if the delay of the scanning signal supplied to the gate line 4 does not become a problem, the gate line driving circuit 32 may be only on one side. Further, the data line driving circuit 130 may be arranged on both sides along the side of the image display area. For example, the odd-numbered data lines 3 supply an image signal from a data line driving circuit disposed along one side of the image display area, and the even-numbered data lines 3 are on the opposite side of the image display area. The image signal may be supplied from a data line driving circuit arranged along the line. If the data lines 3 are driven in a comb shape in this way, the area occupied by the data line driving circuit can be expanded, and a complicated circuit can be configured. Further, on the remaining side of the TFT array substrate 7, a plurality of wirings 33 are provided for connecting between the gate line driving circuits 32 provided on both sides of the image display area. In addition, a conductive material 34 for providing electrical continuity between the TFT array substrate 7 and the counter substrate 15 is provided in at least one corner of the counter substrate 15 on which the counter electrode is formed inside. . The counter substrate 15 having substantially the same outline as the sealing material 28 is fixed to the TFT array substrate 7 by the sealing material 28.

  In the present liquid crystal display device 40, in the overlapping portion of the wide portion 3A and the capacitor line 6 and the pixel electrode 1a, the region overlapping the peripheral portion on the opposite side of the rubbing direction Y in the peripheral portion of the pixel electrode 1a is in the rubbing direction Y. Since it is formed wider than the area overlapping the forward direction side, an appropriate size black matrix (overlapping part) is arranged according to the size of disclination determined by the rubbing direction, and disclination from the opening Can be prevented, and the aperture ratio can be improved by not shielding light more than necessary in a portion where the disclination is small.

  In the liquid crystal display device 40, the wide portion 3A and the capacitor line 6 which are part of the data line 3 are used as the light shielding layer, but a light shielding layer may be provided separately from these. For example, a black matrix may be formed inside the counter substrate 15. However, if the wide portion 3A of the data line 3 and the capacitor line 6 function as a black matrix as in the present liquid crystal display device 40, it is not necessary to separately provide a light shielding layer serving as a black matrix on the counter substrate 15 or the like. Simplification of the structure and reduction of manufacturing processes can be achieved.

  Furthermore, in the manufacturing process of the TFT array substrate 7 which is a component of the liquid crystal display device 40, the matrix structure defect detection method and the matrix structure defect detection device according to the embodiment of the present invention are used. As a result, a short-circuit defect between the pixel electrode 1a caused by the pressure applied to the TFT array substrate 7 or the like and the conductive foreign matter and the counter electrode (1b) of the counter substrate 15 can be easily and accurately detected as a linear defect. Therefore, according to this application example, the high-quality and low-cost liquid crystal display device 40 can be provided.

(Electronics)
Next, another electronic device having the liquid crystal display device 40 of the application example as a constituent element will be described.
FIG. 15A is a perspective view showing an example of a mobile phone. In FIG. 15A, reference numeral 500 denotes a mobile phone body, and reference numeral 501 denotes a display unit having the liquid crystal display device 40 of the application example. FIG. 15B is a perspective view showing an example of a wristwatch type electronic device.
In FIG. 15B, reference numeral 600 denotes a watch body, and reference numeral 601 denotes a display unit having the liquid crystal display device 40 of the application example. FIG. 15C is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 15C, reference numeral 700 denotes an information processing apparatus, reference numeral 701 denotes an input unit such as a keyboard, reference numeral 702 denotes a display unit including the liquid crystal display device 40 of the application example, and reference numeral 703 denotes an information processing apparatus main body. Show.
The electronic device illustrated in FIG. 15 includes the liquid crystal display device 40 of the above application example, and thus can be an electronic device with high reliability, high performance, and reduced manufacturing costs.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

  For example, in the above embodiment, a linear pattern indicating a pixel defect is detected from the gap between the liquid crystal pixel 1 and the pressure roller 210. However, the present invention is not limited to this configuration. It is good also as a structure using the pressure roller which has a light transmittance with respect to the emitted light. In this case, since light is emitted through the pressure roller, the detection range is widened and detection is easy. Further, in this configuration, since it is not necessary to form a defect detection gap in order to visually or receive light, the length of the pressure roller is set to a size that covers the entire arrangement range of the liquid crystal pixels 1. be able to. Therefore, in this configuration, it is not necessary to perform rolling twice to pressurize the entire surface of the matrix structure 100, and the time required for defect detection can be halved.

In the above embodiment, the pressure roller is configured to roll relative to the surface of the matrix structure 100. However, the present invention is not limited to this, and the matrix structure 100 is not limited to the pressure roller that is rotatably positioned. It may be configured to move in a pressurized state (for example, in the X direction).
Furthermore, in the said embodiment, although it was set as the structure which uses a cylindrical pressure roller as a pressurization means, it is not limited to this, Other shapes may be sufficient. For example, a configuration may be adopted in which the matrix structure 100 is relatively moved while a columnar member having a rectangular cross section such as a stamp is continuously raised and lowered in the Z direction.

  Further, for example, in the above-described embodiment, an example of a matrix structure used for a liquid crystal display device has been described, but the present invention is not limited to this, and is applied to various devices having a matrix structure. Can do. That is, the matrix structure defect detection method and the matrix structure defect detection apparatus according to the present invention are applied to an organic electroluminescence display device, a CMOS (Complementary Metal Oxide Semiconductor) memory integrated circuit or an imaging element integrated circuit, etc. The matrix structure is given.

In the above embodiment, the normally white liquid crystal display device has been described. However, the present invention can also be applied to a normally black display device.
In the above embodiment, the data signal applying means 20 applies a drive signal that finally turns the liquid crystal pixel 1 to the data lines 3a and 3b. However, this drive signal may be applied to the counter electrode 1b. Good. That is, with the potentials of all the pixel electrodes 1a being constant, a drive signal that finally turns on the liquid crystal pixels 1 is applied to all the counter electrodes 1b. Even if it does in this way, there can exist an effect | action and effect similar to the said embodiment.

1 is a circuit diagram illustrating a defect detection apparatus having a matrix structure according to an embodiment of the present invention. It is a figure which shows schematic structure of the same defect detection apparatus. It is a schematic cross section which shows an example of the short circuit defect in a matrix structure same as the above. It is an enlarged view of the periphery of the short circuit defect in a matrix structure same as the above. It is a figure which displays the short circuit defect of a matrix structure same as the above as a linear defect. It is a figure which shows schematic structure of the defect detection apparatus which concerns on 2nd Embodiment. It is a wave form diagram which shows the example of the scanning line signal which concerns on embodiment of this invention. It is a wave form diagram which shows the example of the scanning line signal which concerns on embodiment of this invention. It is a wave form diagram which shows the example of the drive signal which concerns on embodiment of this invention. It is a wave form diagram which shows the example of the drive signal which concerns on embodiment of this invention. It is a top view which shows the example of a matrix structure inspected with the defect detection apparatus same as the above. It is sectional drawing of the example of a matrix structure same as the above. It is a top view which shows the liquid crystal display device which has an example of a matrix structure same as the above. It is sectional drawing of a liquid crystal display device same as the above. It is a figure which shows an example of the electronic device which concerns on embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Liquid crystal pixel (pixel), 2 ... TFT (switching element), 3a, 3b ... Data line, 4a-4e ... Gate line, 11 ... Short-circuit defect (defect), 20 ... Data signal application means (defect detection apparatus), DESCRIPTION OF SYMBOLS 30 ... Gate signal application means (defect detection apparatus), 100 ... Matrix structure, 201 ... Imaging means, 203 ... Synchronization means, 210 ... Pressure roller (pressure means)

Claims (15)

  1. A structure in which a plurality of gate lines arranged along the first direction and a plurality of data lines arranged along the second direction intersect in a grid pattern, and a switching element arranged for each intersection An apparatus used when detecting a defect in a matrix structure having a drive element driven and controlled by a signal flowing through the switching element,
    Gate signal applying means for applying a signal for turning on the switching element to the plurality of gate lines;
    A data signal applying means for applying a drive signal for operating the drive element for the plurality of data lines;
    A pressurizing means for pressurizing the matrix structure;
    A defect detection apparatus having a matrix structure, comprising synchronization means for synchronizing application of the drive signal by the data signal application means and pressurization by the pressurization means.
  2. The defect detection apparatus having a matrix structure according to claim 1,
    The defect detection apparatus having a matrix structure, wherein the pressurizing unit pressurizes the matrix structure linearly.
  3. The defect detection apparatus having a matrix structure according to claim 2,
    The defect detection apparatus having a matrix structure, wherein the pressurizing unit pressurizes linearly in the second direction.
  4. The defect detection apparatus having a matrix structure according to claim 2 or 3,
    A defect detection apparatus having a matrix structure, wherein a length of the pressing unit in the second direction is shorter than a length of a range in which the driving elements are arranged in the second direction.
  5. In the defect detector of the matrix structure in any one of Claim 2 to 4,
    A defect detection apparatus having a matrix structure, wherein the pressurizing means has light permeability.
  6. In the defect detector of the matrix structure in any one of Claim 1 to 5,
    The defect detection apparatus having a matrix structure, wherein the pressing unit moves relative to the matrix structure in an arrangement direction of the data lines.
  7. The defect detection apparatus having a matrix structure according to any one of claims 1 to 6,
    A defect detection apparatus having a matrix structure, comprising detection means for detecting a phenomenon related to a change in the state of the data line, which occurs due to a short circuit caused by pressurization of the pressurizing means.
  8. The defect detection apparatus having a matrix structure according to claim 7,
    The drive element constitutes a pixel,
    The defect detection apparatus having a matrix structure, wherein the detection unit includes an imaging unit that captures an image formed by a plurality of the pixels.
  9. The defect detection apparatus having a matrix structure according to claim 7,
    The defect detection apparatus having a matrix structure, wherein the detection means detects a change in potential or current value of the drive signal caused by the short circuit.
  10. In the defect detection apparatus of the matrix structure in any one of Claim 1 to 9,
    Defect detection of a matrix structure, wherein the data signal applying means applies a driving signal that switches between an operating state and a non-operating state of the driving element when a short circuit occurs due to pressurization of the pressurizing means. apparatus.
  11. The defect detection apparatus having a matrix structure according to any one of claims 1 to 10,
    The drive element has a liquid crystal sandwiched between a pixel electrode and a counter electrode,
    In the matrix structure, the defect is caused by a conductive foreign material between the pixel electrode and the counter electrode when the matrix structure is pressurized to reduce the distance between the pixel electrode and the counter electrode. Defect detection device.
  12. A structure in which a plurality of gate lines arranged along the first direction and a plurality of data lines arranged along the second direction intersect in a grid pattern, and a switching element arranged for each intersection And a method of detecting a defect in a matrix structure having a driving element driven and controlled by a signal flowing through the switching element,
    Applying a signal for turning on the switching element to the plurality of gate lines;
    Applying a driving signal for operating the driving element for the plurality of data lines;
    Pressurizing the matrix structure in synchronization with the application of the drive signal;
    A defect detection method having a matrix structure characterized by comprising:
  13. The defect detection method for a matrix structure according to claim 12,
    A defect detection method for a matrix structure, wherein the matrix structure is pressed linearly.
  14. The defect detection method for a matrix structure according to claim 13,
    A defect detection method having a matrix structure, characterized by pressurizing linearly in the second direction.
  15. In the defect detection method of the matrix structure in any one of Claim 12 to 14,
    A defect detection method for a matrix structure, wherein the pressing is performed while being relatively moved in the arrangement direction of the data lines with respect to the matrix structure.
JP2005090777A 2005-03-28 2005-03-28 Device and method for detecting defect of matrix structure Withdrawn JP2006275547A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010014696A (en) * 2008-07-01 2010-01-21 Utechzone Co Ltd Defect inspecting device of liquid crystal panel
US8249330B2 (en) 2007-12-27 2012-08-21 Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. System and method for testing a liquid crystal panel
JP2012159489A (en) * 2011-02-01 2012-08-23 Jokon Kaku Optical inspection apparatus
TWI393934B (en) * 2007-12-31 2013-04-21 Hon Hai Prec Ind Co Ltd System and method for testing a liquid crystal panel

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8249330B2 (en) 2007-12-27 2012-08-21 Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. System and method for testing a liquid crystal panel
TWI393934B (en) * 2007-12-31 2013-04-21 Hon Hai Prec Ind Co Ltd System and method for testing a liquid crystal panel
JP2010014696A (en) * 2008-07-01 2010-01-21 Utechzone Co Ltd Defect inspecting device of liquid crystal panel
JP2012159489A (en) * 2011-02-01 2012-08-23 Jokon Kaku Optical inspection apparatus
EP2482059A3 (en) * 2011-02-01 2017-11-01 Kuo Cooper S. K. Apparatus for optical inspection

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