JP2006257523A - High density solidified molding in which continuous phase and dispersed phase are controlled - Google Patents
High density solidified molding in which continuous phase and dispersed phase are controlled Download PDFInfo
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Abstract
Description
本発明は、２種以上の混合粉末を原料とした固化成形体において、連続相と分散相を制御することにより、機械的、熱的、電気的、磁気的特性および相対密度を改善した高密度固化成形体に関するものであり、例えば、スパッタリングターゲット材、半導体放熱板、サーメット工具などに関するものである。 The present invention is a solidified molded body made of two or more kinds of mixed powders, and has improved mechanical, thermal, electrical, magnetic properties and relative density by controlling the continuous phase and dispersed phase. The present invention relates to a solidified molded body, for example, a sputtering target material, a semiconductor heat sink, a cermet tool, and the like.
一般に、各種ディスクの記録膜、下地膜、反射膜の形成や電極膜の形成、さらには耐摩耗性、摺動性を付与する表面処理などの様々な組成のターゲット材を使用したＰＶＤ法が適用されている。近年、これら皮膜の特性改善を目的とした組成開発が盛んに行なわれており、様々な組成のターゲット材が検討、実用化されている。このような様々な組成のターゲット材の中でも、融点が著しく高いもの、液相分離するもの、活性元素を含み溶解時に坩堝と反応するもの、微細均一な組織を必要とするものなど、通常の溶解法での製造が困難なものに関して、混合粉末を適当な方法で固化成形することで複合材料とする粉末冶金法が適用されている。 In general, PVD method using target materials with various compositions such as recording film, base film, reflection film and electrode film formation of various discs, and surface treatment to give wear resistance and slidability is applied. Has been. In recent years, compositions have been actively developed for the purpose of improving the characteristics of these films, and target materials having various compositions have been studied and put into practical use. Among such various target materials, ordinary melting materials such as those with extremely high melting points, those that undergo liquid phase separation, those that contain active elements and react with the crucible during melting, and those that require a fine and uniform structure For those that are difficult to manufacture by the method, a powder metallurgy method is applied in which a mixed powder is solidified and molded by an appropriate method to form a composite material.
また、上記のように混合粉末を固化成形した複合材料としては、ターゲット材以外にも、超硬合金（ＷＣ−Ｃｏ系）に代表される高硬度と高靱性を有する焼結部材や半導体用放熱基板材（Ｃｕ−Ｍｏ、Ｃｕ−Ｗ系等）など多岐にわたる。このような混合粉末を固化成形した複合材料の機械的、熱的、電気的、磁気的特性は組成や相対密度により左右されるが、それら以外にもミクロ組織の影響が非常に大きく、特に２種以上の相を有する複合材料においては、特定の相を連続相（結合相）、分散相（孤立相）とすることにより、これらの特性を制御することが可能である。 In addition to the target material, the composite material obtained by solidifying and molding the mixed powder as described above includes a sintered member having high hardness and high toughness typified by cemented carbide (WC-Co), and heat dissipation for semiconductors. Wide variety of substrate materials (Cu-Mo, Cu-W, etc.). The mechanical, thermal, electrical, and magnetic properties of the composite material obtained by solidifying and molding such a mixed powder depend on the composition and relative density, but besides these, the influence of the microstructure is very large. In a composite material having more than one kind of phase, these characteristics can be controlled by setting a specific phase as a continuous phase (bonded phase) and a dispersed phase (isolated phase).
例えば、焼結工具部材では高硬度なセラミックス粒子を分散相とし高靱性な金属相を連続相とすることで、高硬度と高靱性を両立できる。また、低熱膨張と高熱伝導性が要求される半導体用放熱基板材では、低熱膨張のセラミックスあるいは金属粒子を分散相とし高熱伝導性を有するＣｕ、Ａｌなどを連続相にすることにより低熱膨張と高熱伝導性を両立できる。 For example, in a sintered tool member, both high hardness and high toughness can be achieved by using high-hardness ceramic particles as a dispersed phase and a high-toughness metal phase as a continuous phase. In addition, in semiconductor heat dissipation substrate materials that require low thermal expansion and high thermal conductivity, low thermal expansion and high heat are achieved by using low thermal expansion ceramics or metal particles as a dispersed phase and Cu, Al, etc. having high thermal conductivity as a continuous phase. Both conductivity can be achieved.
さらには、Ｆｅ、Ｃｏ、Ｎｉなどの軟磁性を有する金属をベースとしたターゲット材を用いてマグネトロンスパッタなどを行なう際に、ターゲット材の透磁率が高いため印加磁場の大半がターゲット内を通り、電子を捕捉する磁場がターゲット外に良好に漏れずスパッタ効率が下がる問題があるが、この場合にも、非磁性相あるいは低透磁率相を連続相とし、Ｆｅ、Ｃｏ、Ｎｉなどの強磁性相を分散相にし分断することで複合材料（ターゲット材）全体の透磁率を下げ、良好なスパッタ効率を確保することもできる。上記例のように連続相と分散相を制御することは複合材料の諸特性制御にとって極めて重要な技術である。 Furthermore, when performing magnetron sputtering using a target material based on a soft magnetic metal such as Fe, Co, Ni, etc., most of the applied magnetic field passes through the target because the magnetic permeability of the target material is high. There is a problem that the magnetic field for trapping electrons does not leak well outside the target and the sputtering efficiency is lowered. In this case, too, a non-magnetic phase or a low-permeability phase is used as a continuous phase, and a ferromagnetic phase such as Fe, Co, Ni, etc. By dividing into a dispersed phase, the permeability of the entire composite material (target material) can be lowered, and good sputtering efficiency can be secured. Controlling the continuous phase and the dispersed phase as in the above example is a very important technique for controlling various properties of the composite material.
しかしながら、一般的に混合粉末の固化成形体において、連続相と分散相を意図的に制御することは困難であり、体積率の高い相が自動的に連続相になってしまうことが多い。あるいは、混合した異種粉末間で固相反応し、新たな反応相が形成され、高密度化（相対密度９８％以上）する組合せの混合粉末においては、反応相の形態も様々であり、連続相と分散相の制御はさらに困難である。また、高密度化を実現するため液相焼結を適用している例もあるが、液相焼結の場合、連続相、分散相の粗大化による諸特性の劣化を抑制するための検討が別途必要となり課題となる。 However, in general, it is difficult to intentionally control the continuous phase and the dispersed phase in a solidified compact of a mixed powder, and a phase with a high volume ratio often becomes a continuous phase automatically. Alternatively, in the mixed powder in which the solid phase reaction is performed between the mixed different powders, a new reaction phase is formed, and the density is increased (relative density of 98% or more), the form of the reaction phase varies, and the continuous phase And the control of the dispersed phase is even more difficult. In addition, there are examples where liquid phase sintering is applied to achieve high density, but in the case of liquid phase sintering, there are studies to suppress deterioration of various characteristics due to coarsening of the continuous phase and dispersed phase. It is necessary separately and becomes a problem.
上述した課題に対して、例えば、特開平２−８３０１号公報（特許文献１）に開示されているように、金属粉末を融点より低い温度で加圧、固化成形し、高密度成形体を得る粉末キャンニング加工による金属材の製造方法が提案されている。また、特開２００１−２５４１７３号公報（特許文献２）に開示されているように、ＳｉＯ2 とＺｎＳの混合粉末の固化成形体において連続相と分散相を制御して高出力スパッタ条件で優れた耐割損性を発揮する光記録媒体保護層形成用スパッタリングターゲット焼結材が提案されている。 In response to the above-described problems, for example, as disclosed in Japanese Patent Laid-Open No. 2-8301 (Patent Document 1), a metal powder is pressed and solidified at a temperature lower than the melting point to obtain a high-density molded body. A method for producing a metal material by powder canning has been proposed. Further, as disclosed in Japanese Patent Application Laid-Open No. 2001-254173 (Patent Document 2), in a solidified compact of a mixed powder of SiO 2 and ZnS, the continuous phase and the dispersed phase are controlled and excellent under high power sputtering conditions. There has been proposed a sputtering target sintered material for forming a protective layer for an optical recording medium, which exhibits crack resistance.
また、特開平５−２６３１６３号公報（特許文献３）に開示されているように、バインダーとなるＦｅ、Ｎｉの液相温度以上に加熱することで、Ｆｅ、Ｎｉを結合相として高密度化したＷ−Ｎｉ−Ｆｅ焼結合金の製造方法が提案されている。さらには、特開２００４−２７７８５５号公報（特許文献４）に開示されているように、高密度化のために、Ｃｕの融点（１０８３℃）以上に加熱し液相焼結した高放熱性合金、放熱板、半導体素子用パッケージ、およびこれらの製造方法が提案されている。 Further, as disclosed in Japanese Patent Application Laid-Open No. 5-263163 (Patent Document 3), the Fe and Ni are heated to a temperature higher than the liquid phase temperature of Fe and Ni to increase the density of Fe and Ni as a binder phase. A method for producing a W—Ni—Fe sintered alloy has been proposed. Furthermore, as disclosed in Japanese Patent Application Laid-Open No. 2004-277855 (Patent Document 4), a high heat dissipation alloy that is heated to a melting point of Cu (1083 ° C.) or higher and subjected to liquid phase sintering for higher density. A heat sink, a package for a semiconductor device, and a manufacturing method thereof have been proposed.
しかしながら、上述した特許文献１に提案されている方法には、連続相と分散相の制御についての記載はない。また、特許文献２に提案されている方法であるＳｉＯ2 とＺｎＳの両原料粉末とも比較的焼結性の低いセラミックス粒子を使用していることから高密度化が困難である。また、特許文献３に提案されている方法では、粗大化抑制のために保持時間や冷却速度などの工夫を必要としている。さらに、特許文献４に提案されている方法では、高密度化のためにＣｕの融点（１０８３℃）以上に加熱して液相焼結しなければならないと言う問題がある。
However, the method proposed in Patent Document 1 described above does not describe the control of the continuous phase and the dispersed phase. Further, since both SiO 2 and ZnS raw material powders, which are the methods proposed in
上述したような問題を解消するために、発明者らは鋭意研究を重ねた結果、本発明では、２種以上の混合原料粉末を液相温度未満で固化成形した相対密度９８％以上の高密度固化成形体において、所定の原料粉末粒径比と原料粉末Ａの混合率を満たすことで、連続相と分散相が制御された複合成形体を提供するものである。
その発明の要旨とするところは、
（１）２種以上の混合粉末を原料とし、ミクロ組織が連続相と分散相からなる相対密度９８％以上の固化成形体において、原料粉末Ａの混合率が４０容量％以下であり、かつ原料粉末Ａと原料粉末Ｂの平均粒径の比が、以下の式（１）を満たす混合粉末を液相温度未満で固化成形したことを特徴とする連続相と分散相が制御された高密度固化成形体。
（原料粉末Ａの平均粒径）／（原料粉末Ｂの平均粒径）≦（原料粉末Ａの混合率）／５０ ‥‥ （１）
ただし、原料粉末Ａの混合率は容量％
In order to solve the above-mentioned problems, the inventors have conducted intensive research. As a result, in the present invention, a high density of 98% or higher relative density obtained by solidifying and molding two or more mixed raw material powders below the liquidus temperature. In the solidified molded body, a composite molded body in which a continuous phase and a dispersed phase are controlled is provided by satisfying a predetermined raw material powder particle size ratio and a mixing ratio of the raw material powder A.
The gist of the invention is that
(1) In a solidified molded body having a relative density of 98% or more, in which two or more kinds of mixed powders are used as raw materials and the microstructure is a continuous phase and a dispersed phase, the mixing ratio of the raw material powder A is 40% by volume or less A mixed powder satisfying the following formula (1) with a ratio of average particle diameters of powder A and raw material powder B is solidified and molded at a temperature lower than the liquidus temperature. Molded body.
(Average particle diameter of raw material powder A) / (average particle diameter of raw material powder B) ≦ (mixing ratio of raw material powder A) / 50 (1)
However, the mixing ratio of the raw material powder A is volume%.
（２）原料粉末Ａが非金属もしくは非金属の化合物以外からなることを特徴とする前記（１）に記載の連続相と分散相が制御された高密度固化成形体。なお、原料粉末が非金属、もしくは非金属の化合物以外からなるとは、金属、半金属、半導体や、それらの化合物、あるいはそれらの（亜／過）共晶、（亜／過）共析組織が主な対象となることを意味する。
（３）連続相の融点が分散相の融点より３００℃以上低いことを特徴とする前記（１）または（２）に記載の連続相と分散相が制御された高密度固化成形体にある。
(2) The high-density solidified article in which the continuous phase and the dispersed phase are controlled as described in (1) above, wherein the raw material powder A is composed of other than a non-metallic or non-metallic compound. It should be noted that the raw material powder is made of non-metallic or non-metallic compound means that a metal, a semi-metal, a semiconductor, a compound thereof, or a (sub / hyper) eutectic or (sub / hyper) eutectoid structure. It means to be the main target.
(3) The high-density solidified article in which the continuous phase and the dispersed phase are controlled as described in (1) or (2) above, wherein the melting point of the continuous phase is 300 ° C. or more lower than the melting point of the dispersed phase.
以上述べたように、本発明は２種以上の混合粉末を原料とした固化成形体において、混合率の少ない方の粉末成分濃度が高い相でも、意図的に連続相とすることを可能にすることによって、機械的、熱的、電気的、磁気的特性および焼結性に優れた高密度固化成形体を得ることが出来る極めて優れた効果を奏するものである。 As described above, the present invention makes it possible to intentionally make a continuous phase even in a phase having a higher powder component concentration with a lower mixing ratio in a solidified molded body using two or more kinds of mixed powder as a raw material. As a result, it is possible to obtain a high-density solidified molded body excellent in mechanical, thermal, electrical, magnetic properties and sinterability, and has an extremely excellent effect.
以下、本発明について図面に従って詳細に説明する。
先ず、本発明の前提条件とする、２種以上の混合粉末を原料とし、ミクロ組織が連続相と分散相からなる相対密度９８％以上の固化成形体であること。相対密度９８％未満では、異常放電などの原因となりターゲット材としてはスパッタ不良を起こしたり、あるいはサーメット工具としては機械的特性の劣化などにつながる。
Hereinafter, the present invention will be described in detail with reference to the drawings.
First, it is a solidified molded body having a relative density of 98% or more, using two or more kinds of mixed powders as a raw material and having a microstructure composed of a continuous phase and a dispersed phase. If the relative density is less than 98%, it may cause abnormal discharge or the like, resulting in spatter failure as a target material, or deterioration of mechanical properties as a cermet tool.
上述した相対密度９８％以上の固化成形体において、本発明の第１の要件は、粒径比と混合率について、式（１）を満たす原料粉末を選定することで、連続相と分散相を制御していることである。式（１）を満たす条件の混合粉末を原料粉末として使用することで、混合率が４０容量％以下と低い相でも連続相にすることができる。この式（１）から分かる通り、より低い体積率の相を連続相とした複合材料を得るためには、原料粉末Ｂより平均粒径の小さい原料粉末Ａを用いることが必要であり、本発明は鋭意検討の結果、両原料粉末の混合率と平均粒径比の相関により連続相と分散相を制御する方法を明らかにしたものである。 In the above-described solidified molded body having a relative density of 98% or more, the first requirement of the present invention is that the raw material powder satisfying the formula (1) is selected for the particle size ratio and the mixing ratio, whereby the continuous phase and the dispersed phase are changed. It is controlling. By using a mixed powder satisfying the formula (1) as a raw material powder, even a phase having a low mixing ratio of 40% by volume or less can be made a continuous phase. As can be seen from this formula (1), in order to obtain a composite material having a lower volume fraction phase as a continuous phase, it is necessary to use a raw material powder A having an average particle size smaller than that of the raw material powder B. Has clarified a method for controlling the continuous phase and the dispersed phase by the correlation between the mixing ratio of both raw material powders and the average particle size ratio as a result of intensive studies.
上記相関の作用については、以下の２点が推測される。
（１）粒径の異なる粉末を固化成形する際、より高い表面エネルギーを有する小径の粉末が表面エネルギーを低下させるために大径の粉末の表面を覆うように原子拡散し結合することで、小径粉末が連続相になるのではないか推測される。この概念を図１に示す。図１は、小径粉末と大径粉末が焼結し小径粉末が連続相になると推測される概念図である。この図に示すように、表面エネルギーの高い小径粉末２が大径粉末１の表面を覆うように拡散し結合することにより連続相３を形成する状態が分かる。さらに、（２）固化成形する際、小径の粉末が大径の粉末の隙間に流れ込むことにより連続相となるのではないかと推測される。より好ましくは、原料粉末Ａの混合率が２５容量％以下の固化成形において有効である。
The following two points are presumed for the function of the correlation.
(1) When solidifying and molding powders having different particle diameters, small diameter powders having higher surface energy are atomically diffused and bonded so as to cover the surface of large diameter powders in order to reduce the surface energy. It is presumed that the powder becomes a continuous phase. This concept is illustrated in FIG. FIG. 1 is a conceptual diagram in which a small diameter powder and a large diameter powder are sintered and the small diameter powder is assumed to be a continuous phase. As shown in this figure, it can be seen that the
本発明の第２の要件は、液相温度未満での固化成形であること。液相温度以上で固化成形すると、ミクロ組織の粗大化が顕著となり諸特性が劣化する。また、より好ましくは、有機バインダーなどを使用せず、熱間静水圧プレス（ＨＩＰ）、アップセットにより固化成形する方が高密度化が容易である。
次に、本発明の要件は、原料粉末Ａが非金属もしくは非金属の化合物以外であること。原料粉末Ａとして、上記粉末を使用することで、固相焼結でも良好な固化成形が可能である。
The second requirement of the present invention is solidification molding below the liquidus temperature. When solidification molding is performed at a temperature higher than the liquidus temperature, coarsening of the microstructure becomes remarkable and various properties deteriorate. More preferably, it is easier to increase the density by solid forming by hot isostatic pressing (HIP) or upset without using an organic binder.
Next, the requirement of the present invention is that the raw material powder A is other than a non-metallic or non-metallic compound. By using the above powder as the raw material powder A, good solidification molding is possible even by solid phase sintering.
さらに、連続相の融点が分散相の融点より３００℃以上低いことである。高融点相と低融点相よりなる複合材料を液相温度未満で固化成形する場合、高融点相では原子拡散が活発でないため高密度化が困難である。しかしながら、本発明により意図的に低融点相を連続相とすることで、低温でも高密度に固化成形が可能であり、特に、両相の融点差が３００℃以上であるときの固化成形に有効である。両相については、単相、複合相（共晶、亜共晶、過共晶、共析、亜共析、過共析など）、また金属相や非金属相などが考えられる。 Furthermore, the melting point of the continuous phase is 300 ° C. or lower than the melting point of the dispersed phase. When a composite material composed of a high melting point phase and a low melting point phase is solidified at a temperature lower than the liquidus temperature, it is difficult to increase the density because atomic diffusion is not active in the high melting point phase. However, by intentionally setting the low melting point phase as a continuous phase according to the present invention, it is possible to solidify and mold at high density even at a low temperature, and particularly effective for solidification molding when the difference between the melting points of both phases is 300 ° C. or more. It is. As for both phases, a single phase, a composite phase (eutectic, hypoeutectic, hypereutectic, eutectoid, hypoeutectoid, hypereutectoid, etc.), a metallic phase, a nonmetallic phase, and the like can be considered.
以下、本発明について実施例によって具体的に説明する。
表１に数種類の平均粒径に分級したＣｒ粉末とＳｉ粉末を混合した原料粉末を、ＨＩＰ（１３９０℃−５ｈ）した成形体の連続相と分散相の構成相の結果、および表２に数種類の平均粒径に分散したＷ粉末とＣｕ粉末を混合した原料粉末を、アップセット（９５０℃）した成形体の連続相と分散相の構成相の結果をそれぞれ示す。これにより原料粉末の平均粒径比と混合率により連続相、分散相を制御できることを示す。
Hereinafter, the present invention will be specifically described with reference to examples.
Table 1 shows the results of the constituent phases of the continuous phase and the dispersed phase of a molded body obtained by mixing raw material powder obtained by mixing Cr powder and Si powder classified into several kinds of average particle diameters with HIP (1390 ° C.-5 h), and Table 2 shows several types. The results of the constituent phase of the continuous phase and the dispersed phase of the molded body obtained by upsetting (950 ° C.) the raw material powder obtained by mixing the W powder and the Cu powder dispersed in the average particle diameter are shown. This shows that the continuous phase and the dispersed phase can be controlled by the average particle size ratio and mixing ratio of the raw material powder.
表１および表２に示す連続相および分散相の構成相については、研磨試料のＥＤＸ分析により同定した。また、相対密度については、研磨試料の光学顕微鏡写真を画像解析し、残存ポアの面積率より相対密度を算出した。ただし、光学顕微鏡写真は１００倍で、合計１ｍｍ×１ｍｍの視野について画像解析した。さらに、抗折力はアップセット材より１．７×１．７×２０の試料を切り出し、支点間距離１０ｍｍの３点曲げ試験により測定した。その結果、５００ＭＰａ以上のものを○、５００ＭＰａ未満のものを×とした。 The constituent phases of the continuous phase and the dispersed phase shown in Table 1 and Table 2 were identified by EDX analysis of the polished sample. Regarding the relative density, an optical micrograph of the polished sample was subjected to image analysis, and the relative density was calculated from the area ratio of the remaining pores. However, the optical microscope photograph was 100 times, and image analysis was performed on a total field of 1 mm × 1 mm. Further, the bending strength was measured by cutting a 1.7 × 1.7 × 20 sample from the upset material and performing a three-point bending test with a distance between supporting points of 10 mm. As a result, those with a pressure of 500 MPa or more were marked with ◯, and those with a viscosity of less than 500 MPa were marked with x.
表１に示すように、Ｎｏ．１、４〜５、７〜９は本発明例であり、Ｎｏ．２〜３、６は比較例である。本発明例であるＮｏ．１、４〜５、７〜９は、いずれも（Ｓｉ粉末の平均粒径）／（Ｃｒ粉末の平均粒径）≦（Ｓｉ粉末の混合率）／５０を満たしており、その結果、成形体の連続相の構成相は混合粉末の混合率が４０容量％以下と低いにも関わらず、Ｓｉ化合物（Ｃｒ3 Ｓｉ）となっていることが分かる。一方、比較例であるＮｏ．２〜３、６については、いずれも（Ｓｉ粉末の平均粒径）／（Ｃｒ粉末の平均粒径）＞（Ｓｉ粉末の混合率）／５０であり、その結果、混合率の高いＣｒ固溶体が連続相になっていることが分かる。 As shown in Table 1, no. Nos. 1, 4 to 5 and 7 to 9 are examples of the present invention. 2 to 3 and 6 are comparative examples. No. which is an example of the present invention. 1, 4 to 5 and 7 to 9 all satisfy (average particle diameter of Si powder) / (average particle diameter of Cr powder) ≦ (mixing ratio of Si powder) / 50. It can be seen that the constituent phase of the continuous phase is a Si compound (Cr 3 Si) even though the mixing ratio of the mixed powder is as low as 40% by volume or less. On the other hand, No. which is a comparative example. 2 to 3 and 6, all are (average particle diameter of Si powder) / (average particle diameter of Cr powder)> (mixing ratio of Si powder) / 50. As a result, a Cr solid solution having a high mixing ratio is obtained. It turns out that it is a continuous phase.
また、表２に示すように、Ｎｏ．１０、１３、１６〜１７は本発明例であり、Ｎｏ．１１〜１２、１４〜１５、１８は比較例である。本発明例であるＮｏ．１０、１３、１６〜１７は、いずれも（Ｃｕ粉末の平均粒径）／（Ｗ粉末の平均粒径）≦（Ｃｕ粉末の混合率）／５０を満たしており、その結果、成形体の連続相の構成相は混合粉末の混合率が４０容量％以下と低いにも関わらず、Ｃｕ固溶体となっていることが分かる。 As shown in Table 2, No. Nos. 10, 13, 16 to 17 are examples of the present invention. Reference numerals 11 to 12, 14 to 15, and 18 are comparative examples. No. which is an example of the present invention. 10, 13, and 16 to 17 all satisfy (average particle diameter of Cu powder) / (average particle diameter of W powder) ≦ (mixing ratio of Cu powder) / 50. It can be seen that the constituent phase of the phase is a Cu solid solution although the mixing ratio of the mixed powder is as low as 40% by volume or less.
一方、比較例であるＮｏ．１１〜１２、１４〜１５、１８については、いずれも（Ｃｕ粉末の平均粒径）／（Ｗ粉末の平均粒径）＞（Ｃｕ粉末の混合率）／５０であり、その結果、混合率の高いＷ固溶体が連続相になっていることが分かる。また、式（１）を満たしていないため、変形能、反応性、焼結性に劣るＷ固溶体が連続相になっている比較例であるＮｏ．１１〜１２、１４〜１５、１８は相対密度が低いのに対し、式（１）を満たし、変形能、反応性、焼結性の良好なＣｕ固溶体を連続相にした本発明例Ｎｏ．１０、１３、１６〜１７は、いずれも高密度化が達成されており、抗折力も高いことが分かる。 On the other hand, No. which is a comparative example. About 11-12, 14-15, 18, all are (average particle diameter of Cu powder) / (average particle diameter of W powder)> (mixing ratio of Cu powder) / 50. It can be seen that a high W solid solution is in a continuous phase. Moreover, since it does not satisfy | fill Formula (1), it is a comparative example No. which is a W solid solution which is inferior to a deformability, a reactivity, and sinterability in the continuous phase. Nos. 11 to 12, 14 to 15 and 18 have low relative densities, but satisfy the formula (1), and the present invention examples No. 1 in which a Cu solid solution having good deformability, reactivity and sinterability is used as a continuous phase. It can be seen that all of Nos. 10, 13, and 16 to 17 have achieved high density and high bending strength.
上記実施例はＣｒ粉末とＳｉ粉末、およびＷ粉末とＣｕ粉末を混合した原料粉末について述べたが、この実施例以外にも、Ｃｏ（平均粒径５μｍ）：１０容量％、Ｗ（平均粒径３０μｍ）：９０容量％の混合粉末を用いた１３９０℃ＨＩＰ成形にて、Ｃｏを主とした化合物を連続相にした成形体を得た。さらに、Ｃｒ（平均粒径１８２μｍ）：７５容量％、Ｔｉ（平均粒径５１μｍ）：２５容量％の混合粉末を用いた１１５０℃アップセット成形にて、Ｔｉ固溶体を連続相にした成形体を得た。従って、特に、上述した実施例に限定するものではない。 Although the said Example described the raw material powder which mixed Cr powder and Si powder, and W powder and Cu powder, Co (average particle diameter of 5 micrometers): 10 volume%, W (average particle diameter) besides this Example 30 μm): 1390 ° C. HIP molding using 90% by volume of mixed powder to obtain a molded body containing a compound mainly composed of Co as a continuous phase. Furthermore, a molded body in which a Ti solid solution is made into a continuous phase is obtained by 1150 ° C. upset molding using a mixed powder of Cr (average particle size 182 μm): 75 vol% and Ti (average particle diameter 51 μm): 25 vol%. It was. Therefore, it is not particularly limited to the above-described embodiment.
さらに、Ｎｉ（平均粒径５μｍ）とＣｕ（平均粒径１２５μｍ）の混合粉末、Ｆｅ（平均粒径２μｍ）とＣｏ（平均粒径１３μｍ）の混合粉末、Ａｌ（平均粒径９μｍ）とＭｏ（平均粒径２５μｍ）の混合粉末、Ｆｅ５０ｍａｓｓ％Ｎｉ（平均粒径２５μｍ）とＣｕ（平均粒径１２５μｍ）の混合粉末において、いずれの場合も微粉原料の容量％を４０％以下とした組合せにおいて、微粉原料を主とした連続相を有する成形体を得た。
Furthermore, a mixed powder of Ni (average particle size 5 μm) and Cu (average particle size 125 μm), a mixed powder of Fe (
１ 大径粉末
２ 小径粉末
３ 連続相
特許出願人 山陽特殊製鋼株式会社
代理人 弁理士 椎 名 彊
1
Patent Applicant Sanyo Special Steel Co., Ltd.
Attorney: Attorney Shiina
Claims (3)
（原料粉末Ａの平均粒径）／（原料粉末Ｂの平均粒径）≦（原料粉末Ａの混合率）／５０ ‥‥ （１）
ただし、原料粉末Ａの混合率は容量％ In a solidified molded body having a relative density of 98% or more using a mixed powder of two or more kinds as a raw material and having a microstructure composed of a continuous phase and a dispersed phase, an element having a higher molar concentration in the continuous phase than in the dispersed phase. A raw material powder (hereinafter referred to as a raw material powder (hereinafter referred to as a raw material powder A)) having a mixing ratio of 40% by volume or less and having a molar concentration in the dispersed phase higher than that in the raw material powder A and the continuous phase. The mixed powder satisfying the following formula (1) having a ratio of average particle diameter of the raw material powder B) is solidified and molded at a temperature lower than the liquidus temperature. body.
(Average particle diameter of raw material powder A) / (average particle diameter of raw material powder B) ≦ (mixing ratio of raw material powder A) / 50 (1)
However, the mixing ratio of the raw material powder A is volume%.
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| CN113426997A (en) * | 2021-06-11 | 2021-09-24 | 西安交通大学 | High-specific-gravity tungsten-nickel-iron alloy and laser additive manufacturing method thereof |
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| JP2008138232A (en) * | 2006-11-30 | 2008-06-19 | Mitsubishi Materials Corp | HIGH Ga CONTENT Cu-Ga BINARY ALLOY SPUTTERING TARGET, AND ITS MANUFACTURING METHOD |
| CN113426997A (en) * | 2021-06-11 | 2021-09-24 | 西安交通大学 | High-specific-gravity tungsten-nickel-iron alloy and laser additive manufacturing method thereof |
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