JP2006250837A - Pressure sensor - Google Patents
Pressure sensor Download PDFInfo
- Publication number
- JP2006250837A JP2006250837A JP2005070252A JP2005070252A JP2006250837A JP 2006250837 A JP2006250837 A JP 2006250837A JP 2005070252 A JP2005070252 A JP 2005070252A JP 2005070252 A JP2005070252 A JP 2005070252A JP 2006250837 A JP2006250837 A JP 2006250837A
- Authority
- JP
- Japan
- Prior art keywords
- support substrate
- chip
- pressure
- strain
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
本発明は、圧力検出素子に発生する非線形な外乱歪を軽減させることにより、より高精度で安価な圧力センサに関するものである。 The present invention relates to a pressure sensor that is more accurate and inexpensive by reducing nonlinear disturbance distortion generated in a pressure detection element.
圧力センサに関連する先行技術文献としては次のようなものがある。
図３は従来より一般に使用されている従来例の構成説明図、図４は図３の動作説明図で、例えば、実開昭６３ー６３７３７号公報に示されている。 FIG. 3 is a diagram for explaining the configuration of a conventional example that has been generally used, and FIG. 4 is a diagram for explaining the operation of FIG.
図において、１は半導体チップである。
この場合は、シリコンが使用されている。
２は半導体チップ１に設けられ半導体チップ１に起歪部たるダイアフラム３を構成する凹部である。
In the figure, reference numeral 1 denotes a semiconductor chip.
In this case, silicon is used.
Reference numeral 2 denotes a recess that is provided in the semiconductor chip 1 and constitutes a diaphragm 3 that is a strain generating part of the semiconductor chip 1.
４は、半導体チップ１の起歪部３に設けられた半導体圧力検出素子である。
この場合は、振動子が使用されている。
５は半導体チップ１の一面に一面が接続され、凹部２と圧力導入室６を構成する絶縁材からなるチップ支持基板である。
Reference numeral 4 denotes a semiconductor pressure detecting element provided in the strain generating portion 3 of the semiconductor chip 1.
In this case, a vibrator is used.
Reference numeral 5 denotes a chip support substrate made of an insulating material which is connected to one surface of the semiconductor chip 1 and constitutes the recess 2 and the pressure introducing chamber 6.
この場合は、パイレックス（登録商標）ガラスが使用され、直接全面接合されている。
また、この場合は、半導体チップ１とチップ支持基板５とは、陽極接合により接合されている。
７はガラス支持基板５に設けられ、圧力導入室６に連通する連通孔である。
In this case, Pyrex (registered trademark) glass is used and the entire surface is directly bonded.
In this case, the semiconductor chip 1 and the chip support substrate 5 are bonded by anodic bonding.
A communication hole 7 is provided in the glass support substrate 5 and communicates with the pressure introducing chamber 6.
以上の構成において、圧力導入室６に低圧側圧力ＰLが導入され、ダイアフラム３の外側から高圧側圧力ＰＨが加わると、ダイアフラム３は、高圧側圧力ＰＨ―低圧側圧力ＰＬの差圧により変位する。
この変位を半導体圧力検出素子４により電気的に検出すれば、差圧に対応した電気信号出力が得られる。
In the above configuration, when the low pressure side pressure PL is introduced into the pressure introducing chamber 6 and the high pressure side pressure PH is applied from the outside of the diaphragm 3, the diaphragm 3 is displaced by the differential pressure of the high pressure side pressure PH and the low pressure side pressure PL. .
If this displacement is electrically detected by the semiconductor pressure detecting element 4, an electrical signal output corresponding to the differential pressure can be obtained.
しかしながら、このような装置においては、以下の間題点がある。
半導体チップ１とチップ支持基板５とは、陽極接合により接合され、非対称構造となっている。
周囲温度や静圧が変化すると、この非対称構造が原因となって、半導体チップ１とチップ支持基板５の熱膨張係数やヤング率の差によりダイアフラム３には非線形な外乱歪Ｆ１，Ｆ２が発生し、ダイアフラム３上に配置された半導体圧力検出素子４に印加されることになる。
However, such an apparatus has the following problems.
The semiconductor chip 1 and the chip support substrate 5 are bonded by anodic bonding and have an asymmetric structure.
When the ambient temperature or static pressure changes, nonlinear disturbance strains F1 and F2 are generated in the diaphragm 3 due to the difference in thermal expansion coefficient and Young's modulus between the semiconductor chip 1 and the chip support substrate 5 due to this asymmetric structure. Then, it is applied to the semiconductor pressure detecting element 4 arranged on the diaphragm 3.
この非線形歪により、高精度な圧力センサを実現する場合は、次数の高い複雑な補正項が静圧補正、温度補正の両工程で必要となり、校正点外での特性悪化や多数の校正点が必要となり、製造コスト高の要因にもなっている。 In order to realize a high-accuracy pressure sensor due to this non-linear distortion, a complicated correction term with a high degree is required in both the static pressure correction and temperature correction processes, resulting in characteristic deterioration outside the calibration point and a large number of calibration points. It is necessary and is a factor of high manufacturing cost.
本発明の目的は、上記の課題を解決するもので、圧力検出素子に発生する非線形な外乱歪を軽減させることにより、より高精度で安価な圧力センサを提供することにある。 An object of the present invention is to solve the above-described problems, and to provide a pressure sensor that is more accurate and inexpensive by reducing nonlinear disturbance distortion generated in a pressure detection element.
このような課題を達成するために、本発明では、請求項１の圧力センサにおいては、
センサチップに設けられこのセンサチップに起歪部たるダイアフラムを構成する凹部と、前記センサチップの起歪部に設けられた圧力検出素子と、前記センサチップの一面に一面が接続され前記凹部と圧力導入室を構成するチップ支持基板とを具備する圧力センサにおいて、
前記センサチップの他面に一面が接続され前記チップ支持基板と相対する位置に配置され略同一な形状を有する補償支持基板を具備したことを特徴とする。
In order to achieve such a problem, in the present invention, in the pressure sensor of claim 1,
A recess provided in the sensor chip that constitutes a diaphragm serving as a strain generating portion in the sensor chip, a pressure detecting element provided in the strain generating portion of the sensor chip, and one surface connected to one surface of the sensor chip, the pressure in the recess and the pressure In a pressure sensor comprising a chip support substrate constituting an introduction chamber,
A compensation support substrate having one surface connected to the other surface of the sensor chip and disposed at a position facing the chip support substrate and having substantially the same shape is provided.
本発明の請求項２の圧力センサにおいては、請求項１記載の圧力センサにおいて、
前記補償支持基板は、前記チップ支持基板と異なるヤング率を有し前記チップ支持基板が前記圧力検出素子に作用する歪を打ち消すことを特徴とする。
In the pressure sensor according to claim 2 of the present invention, in the pressure sensor according to claim 1,
The compensation support substrate has a Young's modulus different from that of the chip support substrate, and the chip support substrate cancels strain acting on the pressure detection element.
本発明の請求項３の圧力センサにおいては、請求項１記載の圧力センサにおいて、
前記補償支持基板は、前記チップ支持基板と異なる熱膨張係数を有し前記チップ支持基板が前記圧力検出素子に作用する歪を打ち消すことを特徴とする。
In the pressure sensor according to claim 3 of the present invention, in the pressure sensor according to claim 1,
The compensation support substrate has a coefficient of thermal expansion different from that of the chip support substrate, and the chip support substrate cancels strain acting on the pressure detection element.
本発明の請求項４の圧力センサにおいては、請求項１記載の圧力センサにおいて、
前記補償支持基板は、前記センサチップとの接合面積が調整されて前記チップ支持基板が前記圧力検出素子に作用する歪を打ち消すことを特徴とする。
In the pressure sensor according to claim 4 of the present invention, in the pressure sensor according to claim 1,
The compensation support substrate is characterized in that a bonding area with the sensor chip is adjusted, and the chip support substrate cancels strain acting on the pressure detection element.
本発明の請求項５の圧力センサにおいては、請求項１記載の圧力センサにおいて、
前記補償支持基板は、厚さが調整されて前記チップ支持基板が前記圧力検出素子に作用する歪を打ち消すことを特徴とする。
In the pressure sensor according to claim 5 of the present invention, in the pressure sensor according to claim 1,
The compensation support substrate is adjusted in thickness to cancel the strain applied to the pressure detection element by the chip support substrate.
本発明によれば、次のような効果がある。
センサチップの他面に一面が接続され、チップ支持基板と相対する位置に配置され略同一な形状を有する補償支持基板が設けられたので、対称構造により、圧力検出素子には静圧による圧縮歪、温度による圧縮歪と引張歪も線形に印加されることになり、外乱歪の線形性が保たれることになる。
静圧補正、温度補正の両工程での補正項の低次数化が可能となり、校正点以外の精度も改善できため、高精度化と製造コスト低減が出来る圧力センサが得られる。
The present invention has the following effects.
Since one surface is connected to the other surface of the sensor chip and a compensation support substrate having a substantially identical shape is provided at a position facing the chip support substrate, the pressure detection element has a compressive strain due to static pressure due to the symmetrical structure. The compressive strain and tensile strain due to temperature are also applied linearly, and the linearity of disturbance strain is maintained.
The correction terms in both the static pressure correction process and the temperature correction process can be reduced, and the accuracy other than the calibration point can be improved, so that a pressure sensor capable of increasing the accuracy and reducing the manufacturing cost can be obtained.
以下本発明を図面を用いて詳細に説明する。
図１は本発明の一実施例の要部構成説明図、図２は図１の動作説明図である。
Hereinafter, the present invention will be described in detail with reference to the drawings.
FIG. 1 is a diagram illustrating the configuration of the main part of one embodiment of the present invention, and FIG. 2 is a diagram illustrating the operation of FIG.
補償支持基板１１は、センサチップの他面に一面が接続され、チップ支持基板５と相対する位置に配置され略同一な形状を有し、チップ支持基板５が圧力検出素子４に作用する静圧歪や温度歪が減少される。 The compensation support substrate 11 has one surface connected to the other surface of the sensor chip, is disposed at a position facing the chip support substrate 5, has substantially the same shape, and the static pressure at which the chip support substrate 5 acts on the pressure detection element 4. Strain and temperature strain are reduced.
以上の構成において、補償支持基板１１をセンサチップ１の他面側に陽極接合により接合し、チップ支持基板５と対称な構造にする。
この構造により、チップ支持基板５と補償支持基板１１には、静圧による同じ量の圧縮歪Ｆ１、あるいは、温度変化による同じ量の圧縮歪と引張歪Ｆ１が印加されることになる。
In the above configuration, the compensation support substrate 11 is joined to the other surface side of the sensor chip 1 by anodic bonding so as to have a symmetric structure with the chip support substrate 5.
With this structure, the same amount of compressive strain F1 due to static pressure or the same amount of compressive strain and tensile strain F1 due to temperature change is applied to the chip support substrate 5 and the compensation support substrate 11.
以上により、センサチップ１には静圧による圧縮歪、温度による圧縮歪と引張歪も原理的には線形に印加されることになり、従来構造で発生する非線形性歪が大きく軽減されることになる。 Thus, compressive strain due to static pressure, compressive strain due to temperature, and tensile strain are linearly applied to the sensor chip 1 in principle, and nonlinear strain generated in the conventional structure is greatly reduced. Become.
この結果、
チップ支持基板５が圧力検出素子４に作用する静圧歪や温度歪を減少する材料からなる補償支持基板１１が設けられたので、対称構造により、圧力検出素子４には静圧による圧縮歪、温度による圧縮歪と引張歪も線形に印加されることになり、外乱歪の線形性が保たれることになる。
静圧補正、温度補正の両工程での補正項の低次数化が可能となり、校正点以外の精度も改善できため、高精度化と製造コスト低減が出来る圧力センサが得られる。
As a result,
Since the compensation support substrate 11 made of a material that reduces the static pressure strain and the temperature strain that the chip support substrate 5 acts on the pressure detection element 4 is provided, the pressure detection element 4 has a compressive strain due to the static pressure due to the symmetrical structure. The compressive strain and tensile strain due to temperature are also applied linearly, and the linearity of the disturbance strain is maintained.
The correction terms in both the static pressure correction process and the temperature correction process can be reduced, and the accuracy other than the calibration point can be improved, so that a pressure sensor capable of increasing the accuracy and reducing the manufacturing cost can be obtained.
なお、前述の実施例においては、補償支持基板１１がチップ支持基板５と対称構造を有すると、説明したが、更に、例えば、補償支持基板１１は、チップ支持基板５と異なるヤング率を有し、チップ支持基板１１が圧力検出素子４に作用する静圧歪や温度歪が減少される、あるいは、補償支持基板１１は、チップ支持基板５と異なる熱膨張係数を有し、チップ支持基板１１が圧力検出素子４に作用する静圧歪や温度歪が減少されても良い、要するに、更に、チップ支持基板５が圧力検出素子４に作用する静圧歪や温度歪が減少されれば良い。 In the above-described embodiment, it has been described that the compensation support substrate 11 has a symmetrical structure with the chip support substrate 5. Further, for example, the compensation support substrate 11 has a Young's modulus different from that of the chip support substrate 5. The static pressure strain and temperature strain that the chip support substrate 11 acts on the pressure detection element 4 are reduced, or the compensation support substrate 11 has a different thermal expansion coefficient from the chip support substrate 5. The static pressure strain and the temperature strain acting on the pressure detection element 4 may be reduced. In short, the static pressure strain and the temperature strain acting on the pressure detection element 4 by the chip support substrate 5 may be reduced.
また、補償支持基板１１は、センサチップ１との接合面積が調整されて、チップ支持基板１１が圧力検出素子４に作用する静圧歪や温度歪が減少される、あるいは、補償支持基板１１は、厚さが調整されて、チップ支持基板５が圧力検出素子４に作用する静圧歪や温度歪が減少されるようにしても良く、要するに、チップ支持基板５が圧力検出素子４に作用する静圧歪や温度歪が減少されれば良い。 In addition, the compensation support substrate 11 is adjusted in the bonding area with the sensor chip 1 to reduce the static pressure strain and the temperature strain that the chip support substrate 11 acts on the pressure detection element 4, or the compensation support substrate 11 The thickness may be adjusted to reduce the static pressure strain and temperature strain that the chip support substrate 5 acts on the pressure detection element 4. In short, the chip support substrate 5 acts on the pressure detection element 4. It is sufficient if the static pressure strain and the temperature strain are reduced.
なお、以上の説明は、本発明の説明および例示を目的として特定の好適な実施例を示したに過ぎない。
したがって本発明は、上記実施例に限定されることなく、その本質から逸脱しない範囲で更に多くの変更、変形をも含むものである。
The above description merely shows a specific preferred embodiment for the purpose of explanation and illustration of the present invention.
Therefore, the present invention is not limited to the above-described embodiments, and includes many changes and modifications without departing from the essence thereof.
１ 半導体チップ
２ 凹部
３ 測定ダイヤフラム
４ 半導体圧力検出素子
５ チップ支持基板
６ 圧力導入室
７ 連通孔
１１ 補償支持基板
Ｆ１ 歪
Ｆ２ 歪
ＰＬ 低圧側圧力
ＰＨ 高圧側圧力
DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Recessed part 3 Measurement diaphragm 4 Semiconductor pressure detection element 5 Chip support substrate 6 Pressure introducing chamber 7 Communication hole 11 Compensation support substrate F1 Strain F2 Strain PL Low pressure side pressure PH High pressure side pressure
Claims (5)
前記センサチップの起歪部に設けられた圧力検出素子と、
前記センサチップの一面に一面が接続され前記凹部と圧力導入室を構成するチップ支持基板とを具備する圧力センサにおいて、
前記センサチップの他面に一面が接続され前記チップ支持基板と相対する位置に配置され略同一な形状を有する補償支持基板
を具備したことを特徴とする圧力センサ。 A concave portion that is provided in the sensor chip and forms a diaphragm that is a strain generating portion in the sensor chip;
A pressure detecting element provided in a strain generating portion of the sensor chip;
In the pressure sensor comprising one surface connected to one surface of the sensor chip and the chip support substrate constituting the concave portion and the pressure introducing chamber,
A pressure sensor comprising: a compensation support substrate having one surface connected to the other surface of the sensor chip and disposed at a position facing the chip support substrate and having substantially the same shape.
を特徴とする請求項１記載の圧力センサ。 The pressure sensor according to claim 1, wherein the compensation support substrate has a Young's modulus different from that of the chip support substrate, and the chip support substrate cancels strain acting on the pressure detection element.
を特徴とする請求項１記載の圧力センサ。 The pressure sensor according to claim 1, wherein the compensation support substrate has a coefficient of thermal expansion different from that of the chip support substrate, and the chip support substrate cancels strain acting on the pressure detection element.
を特徴とする請求項１記載の圧力センサ。 2. The pressure sensor according to claim 1, wherein the compensation support substrate is adjusted in a bonding area with the sensor chip to cancel the strain applied to the pressure detection element by the chip support substrate.
を特徴とする請求項１記載の圧力センサ。
2. The pressure sensor according to claim 1, wherein the compensation support substrate is adjusted in thickness so as to cancel strain applied to the pressure detection element by the chip support substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005070252A JP2006250837A (en) | 2005-03-14 | 2005-03-14 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005070252A JP2006250837A (en) | 2005-03-14 | 2005-03-14 | Pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2006250837A true JP2006250837A (en) | 2006-09-21 |
Family
ID=37091499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005070252A Pending JP2006250837A (en) | 2005-03-14 | 2005-03-14 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006250837A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8096189B2 (en) | 2008-04-09 | 2012-01-17 | Nagano Keiki Co., Ltd. | Physical quantity sensor and method for manufacturing the same |
-
2005
- 2005-03-14 JP JP2005070252A patent/JP2006250837A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8096189B2 (en) | 2008-04-09 | 2012-01-17 | Nagano Keiki Co., Ltd. | Physical quantity sensor and method for manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100741520B1 (en) | Semiconductor pressure sensor having diaphragm | |
| WO2013164927A1 (en) | Pressure sensor | |
| CN103115720B (en) | Quartz girder resonant mode micro-pressure sensor chip with silicon substrate single island structure | |
| KR100972161B1 (en) | Pressure sensor | |
| US20090096040A1 (en) | Sensor geometry for improved package stress isolation | |
| US6308577B1 (en) | Circuit and method of compensating for membrane stress in a sensor | |
| JP5353996B2 (en) | pressure sensor | |
| JP2006250837A (en) | Pressure sensor | |
| JPH07174652A (en) | Semiconductor pressure sensor and its manufacture as well as pressure detection method | |
| JPH0447244A (en) | Semiconductor pressure sensor | |
| JP2006029984A (en) | Oscillating type pressure sensor | |
| US11560302B2 (en) | Micromechanical pressure sensor with two cavities and diaphragms and corresponding production method | |
| JP2009265012A (en) | Semiconductor sensor | |
| US20090212899A1 (en) | Low Pressure Transducer Using Beam and Diaphragm | |
| JPH04328434A (en) | Composite sensor | |
| US8146436B2 (en) | Silicon sensing structure to detect through-plane motion in a plane of material with thermal expansion substantially different from that of silicon | |
| JP2512220B2 (en) | Multi-function sensor | |
| JPH03239938A (en) | Capacity type pressure sensor | |
| Suzuki et al. | Development of Corrosion‐Resistant Pressure Sensor with Semiconductor Strain Sensor | |
| JP2006275702A (en) | Diaphragm type pressure sensor | |
| JP3120388B2 (en) | Semiconductor pressure transducer | |
| JPH0483139A (en) | Semiconductor deflection sensor | |
| JPH0735634A (en) | Semiconductor pressure gage | |
| JP2016138844A (en) | Strain sensor | |
| JP2009075037A (en) | Force detection unit and pressure detection unit |