JP2006245284A - Photoelectric conversion film stacked type solid-state image sensing device and method of manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion stacked type solid-state image sensing device which is excellent in color separation and has high sensitivity. <P>SOLUTION: In the photoelectric conversion film stacked type solid-state image sensing device, a photoelectric conversion film 13 sandwiched between a common electrode film 14 and a pixel electrode film 11 corresponding to pixels is stacked on a semiconductor substrate 1, and the pixel electrode film 11 and a charge accumulating section 2 formed on the semiconductor substrate 1 are connected to each other by a columnar electrode 25. In this device, the photoelectric conversion film 13 is configured by a porous silicon layer. In the porous silicon layer, nano-silicons are arranged comparatively closely with each other, compared to a nano-silicon film formed by vapor phase, and a trajectory phenomenon and avalanche amplification following thereto are easily caused, and quantum efficiency can be improved. Thus, the high color separation with high sensitivity is possible. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a photoelectric conversion film stacked solid-state imaging device configured by laminating a photoelectric conversion film on a semiconductor substrate, and in particular, a highly sensitive photoelectric film having excellent color separation using semiconductor crystal nanoparticles as a photoelectric conversion film. The present invention relates to a conversion film laminated solid-state imaging device and a method for manufacturing the same.

  A conventional single-plate color solid-state imaging device is provided with a color filter of red (R), green (G), or blue (B) for each pixel, and each pixel is one of R, G, and B. It has a structure that can only receive light in the wavelength range. For this reason, the light use efficiency is low, the resolution of the color image is low, and the RGB three colors are detected at different positions, so false colors are likely to occur, so an optical low-pass filter is required, and light loss due to this filter also occurs. It was.

  Further, a photodiode (photoelectric conversion unit) and a signal readout circuit (a MOS transistor circuit in the case of a CMOS type image sensor and a charge transfer unit in the case of a CCD type image sensor) are arranged on the same plane, and incident light is transmitted. Since the light is condensed on the photoelectric conversion unit by the microlens, there is a problem that light loss due to the microlens is unavoidable.

  In Patent Document 1 and Patent Document 2, by utilizing the wavelength dependence of the light absorption coefficient of silicon (Si), a PN junction for blue light and a PN junction for green light in the depth direction of the Si substrate. And a red light PN junction, and a solid-state imaging device that performs color separation is proposed.

  However, a solid-state imaging device using the wavelength dependence of the light absorption coefficient of silicon has a problem that in principle, sufficient color separation cannot be performed.

  Therefore, Patent Document 3 proposes a photoelectric conversion film stacked solid-state imaging device in which nanosilicon crystals having a particle diameter of several nanometers covered with an insulating film capable of carrier tunnel conduction are deposited to form a photoelectric conversion film. Yes. Patent Document 4 proposes a photoelectric conversion film stacked solid-state imaging device using a photoelectric conversion film in which ultrafine particles are dispersed in a substantially homogeneous medium.

  However, in both cases, the nanosilicon crystals formed in the gas phase are randomly arranged, so that there is a problem that the ballistic phenomenon of carriers important for avalanche amplification does not easily occur and the quantum efficiency is not easily increased. In order to solve this problem, in Patent Document 5, nanosilicon particles are aligned in the film thickness direction of the photoelectric conversion film, but the performance is not sufficient.

JP-A-7-38136 US Pat. No. 5,965,875 JP 2001-7381 A JP-A-10-160574 JP 2003-51608 A

  When a photoelectric conversion film used in a photoelectric conversion film stack type solid-state imaging device is formed by depositing semiconductor nanoparticles coated with an insulating film, a conventional nanosilicon crystal formed in a gas phase may cause avalanche amplification. There is a problem in that color separation performance and sensitivity are insufficient because the important carrier ballistic phenomenon hardly occurs and the quantum efficiency cannot be sufficiently improved.

  An object of the present invention is to provide a photoelectric conversion film stacked solid-state imaging device excellent in color separation and high in sensitivity, and a method for manufacturing the same.

  In the photoelectric conversion film laminated solid-state imaging device of the present invention, a photoelectric conversion film sandwiched between a common electrode film and a pixel electrode film corresponding to a pixel is stacked on a semiconductor substrate, and formed on the pixel electrode film and the semiconductor substrate. In the photoelectric conversion film laminated solid-state imaging device in which the charge storage portion is connected by a columnar electrode, the photoelectric conversion film is formed of a porous silicon layer.

  In the photoelectric conversion film stacked solid-state imaging device of the present invention, at least three photoelectric conversion films sandwiched between a common electrode film and a pixel electrode film corresponding to a pixel are stacked on a semiconductor substrate with an insulating layer interposed therebetween. In the photoelectric conversion film stack type solid-state imaging device in which the pixel electrode film deposited on each photoelectric conversion film is connected to the charge storage portion formed on the semiconductor substrate with a columnar electrode, the photoelectric conversion of the first layer Each photoelectric conversion film is porous so that the absorption peak of the film is 420 nm to 500 nm, the absorption peak of the photoelectric conversion film of the second layer is 500 nm to 580 nm, and the absorption peak of the photoelectric conversion film of the third layer is 580 nm to 660 nm. It is characterized by comprising a quality silicon layer.

  The porous silicon layer of the photoelectric conversion film laminated solid-state imaging device of the present invention is manufactured by anodizing a polysilicon layer.

  The pixel electrode film of the photoelectric conversion film stacked solid-state imaging device of the present invention is provided on the semiconductor substrate side of the corresponding photoelectric conversion film or on the light incident side.

  According to the method for manufacturing a photoelectric conversion film stacked solid-state imaging device of the present invention, an electrode film is formed on a semiconductor substrate on which a signal readout circuit is formed via an insulating layer, and a polysilicon layer is formed on the electrode film. The porous silicon layer is formed by anodizing the polysilicon layer by flowing a current between the electrode film and the solution in a solution containing hydrofluoric acid.

  According to the present invention, since the photoelectric conversion film is composed of a porous silicon layer, the nanosilicones are arranged relatively close to each other as compared with the nanosilicon film formed in the gas phase, and the carrier ballistic phenomenon and the associated avalanche are formed. Amplification is likely to occur, and quantum efficiency can be improved. For this reason, it is possible to obtain a photoelectric conversion film stacked solid-state imaging device with high sensitivity and capable of high-level color separation. In addition, since the red, green, and blue signals are detected simultaneously in one pixel, the aliasing distortion of the spatial frequency that is higher than the Nyquist frequency component does not differ for each color, so an optical low-pass filter is not used. However, no color moire occurs and shading can be suppressed.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a schematic cross-sectional view of one pixel of a photoelectric conversion layer stacked solid-state imaging device according to an embodiment of the present invention. In the photoelectric conversion film laminated solid-state imaging device shown in FIG. 1, a P-well layer is formed on the surface portion of the n-type semiconductor substrate 1. Three signal charge accumulation regions (n regions) 2, 3 and 4 are formed on the surface of the P well layer per pixel. In the illustrated example, the region 2 is a region for storing signal charges according to the amount of incident light of red light, the region 3 is a region for storing signal charges according to the amount of incident light of green light, and the region 4 is an amount of incident light of blue light. It is set as the area | region which accumulate | stores the corresponding signal charge.

  A signal readout circuit (not shown) is further formed on the surface of the well layer of the semiconductor substrate 1. The signal readout circuit may be constituted by a MOS transistor circuit like a conventional CMOS image sensor, You may comprise with a charge transfer path like the conventional CCD type image sensor.

  An insulating layer 7 is stacked on the semiconductor substrate 1 on which the signal charge storage regions 2, 3, 4 and a signal readout circuit (not shown) are formed. A planarizing layer made of an insulating material is formed on the insulating layer 7. 8 are stacked.

  On the planarizing layer 8, a pixel electrode film 11 for red color divided for each pixel is laminated. The pixel electrode film 11 may be formed of a transparent material or an opaque material. A blocking layer 12 is laminated on each pixel electrode film 11, and a photoelectric conversion film 13 for photoelectrically converting red incident light is laminated thereon. Then, a transparent common electrode film (a counter electrode film of the pixel electrode film 11) 14 is laminated on the photoelectric conversion film 13 so as to be common to each pixel.

  A transparent insulating layer 15 is laminated on the common electrode film 14, and a transparent pixel electrode film 16 for green divided for each pixel is further laminated thereon. A blocking layer 17 is stacked on each pixel electrode film 16, and a photoelectric conversion film 18 that photoelectrically converts green incident light is further stacked on the pixel electrode film 16, and a transparent common layer is formed on the photoelectric conversion film 18. An electrode film (a counter electrode of the pixel electrode film 16) 19 is laminated in a single configuration for each pixel.

  A transparent insulating layer 20 is laminated on the common electrode film 19, and a blue transparent pixel electrode film 21 partitioned for each pixel is further laminated thereon. A blocking layer 22 is laminated on each pixel electrode film 21, and a photoelectric conversion film 23 for photoelectrically converting blue incident light is laminated thereon. On the photoelectric conversion film 23, a transparent common electrode film (a counter electrode film of the pixel electrode film 21) 24 is laminated in a single configuration for each pixel. Further, a protective film may be formed thereon, but this is not shown.

  The red pixel electrode film 11 is electrically connected to the red signal charge storage region 2 by a vertical wiring (columnar electrode) 25, and the green pixel electrode film 16 is connected to the green signal charge storage region 3. The blue pixel electrode film 21 is electrically connected by the vertical wiring (columnar electrode) 26, and the blue signal charge storage region 4 and the vertical wiring (columnar electrode) 27 are electrically connected.

  Each of the vertical wirings 25, 26, 27 is insulated from other than the corresponding pixel electrode films 11, 16, 22 and signal charge storage regions 2, 3, 4. That is, the pixel electrode film, the common electrode film, the blocking layer, and the photoelectric conversion film through which the vertical wiring passes are formed with through holes, and the periphery of the vertical wiring is filled with an insulating material.

  When light is incident on the photoelectric conversion film stacked solid-state imaging device of the present embodiment, light in the blue wavelength region or less of the incident light is absorbed by the photoelectric conversion film 23, and charges corresponding to the absorbed light amount are generated. This charge flows from the pixel electrode film 21 through the vertical wiring 27 into the signal charge storage region 4.

  Similarly, light in the green wavelength region or less of the incident light is absorbed by the photoelectric conversion film 18, and a charge corresponding to the absorbed light amount is generated. This charge passes from the pixel electrode film 16 through the vertical wiring 26. Into the signal charge storage region 3.

  Similarly, light in the red wavelength region or less of the incident light is absorbed by the photoelectric conversion film 13, and a charge corresponding to the absorbed light amount is generated. This charge passes from the pixel electrode film 11 through the vertical wiring 25. Into the signal charge storage region 2.

  Signal extraction from each of the signal charge storage regions 2, 3, and 4 can be performed by a technique according to signal extraction from a light receiving unit in a conventional CCD image sensor or CMOS image sensor. For example, a predetermined amount of bias charge is injected into the signal charge storage regions 2, 3, 4 (refresh mode), the signal charge is read out after storing the charge due to light incidence.

  As described above, in the photoelectric conversion film stacked solid-state imaging device according to this embodiment, the three layers of photoelectric conversion films sandwiched between the common electrode film and the pixel electrode film are used as the uppermost photoelectric conversion film 23. A layer that absorbs light shorter than light and B light; an intermediate photoelectric conversion film 18 that absorbs light shorter than G light and G light; and a lowermost photoelectric conversion film 13 that is shorter than light R and R light. By using the layer that absorbs light, visible light is color-separated into blue (B) light, green (G) light, and red (R) light.

  In the present embodiment, each of the photoelectric conversion films 13, 18, and 23 is formed using porous silicon. Nanosilicon crystal grains in the photoelectric conversion film made of porous silicon have a band gap larger than that of bulk silicon due to the quantum confinement effect, and the wavelength of the absorption edge becomes shorter as the diameter becomes smaller. Utilizing this effect, a color-separated signal can be obtained by forming a photoelectric conversion film having a small nanosilicon diameter in order from the upper layer on the light incident side.

  In addition, the surface of the nanosilicon crystal grains is covered with a thin oxide film (insulating film) of several nanometers. This oxide film plays a role of confining carriers and exhibiting a quantum confinement effect, and has a dielectric constant higher than that of silicon. Since it is small, it can be expected that the electric field in the photoelectric conversion film generated when a bias power supply is applied to the common electrode film is concentrated on the oxide film on the surface and carriers are transported ballistically to cause avalanche amplification.

As the homogeneous transparent electrode (pixel electrode film, common electrode film), a tin oxide (SnO ₂ ), titanium oxide (TiO ₂ ), indium oxide (lnO ₂ ), or indium oxide-tin (ITO) thin film may be used. As a formation method thereof, a laser abrasion method, a sputtering method, or the like can be employed. A SiC film capable of tunneling electrons is stacked on the transparent electrode. Using this as a base, a nanosilicon layer is laminated. The insulating film is formed of a transparent material such as SiO ₂ and can be formed by a sputtering method or the like.

  2, 3, and 4 are manufacturing process diagrams of the photoelectric conversion film laminated solid-state imaging device shown in FIG. 1, and (a) is a schematic cross-sectional view taken along line AA shown in (b). (B) is a top view.

  First, as shown in FIG. 2, an insulating film 7 is formed on the semiconductor substrate 1 on which the signal readout circuit and the charge storage regions 2, 3, and 4 are formed by a normal sputtering method or the like. Tungsten plugs 25, 26, and 27 connected to the signal charge storage regions 2, 3, and 4 are formed by dry etching or the like, and an Al film is formed on the entire surface thereof. By etching this Al film, the connection films 31, 32, 33 on the end faces of the tungsten plugs 25, 26, 27 are left, and the planarizing layer 8 is formed thereon. Then, the tungsten plug 25 is extended upward again by a normal resist and a dry etching method.

  Next, an Al electrode film (not yet separated for each pixel) to be the pixel electrode film 11 is formed on the upper surface of the planarizing layer 8. In order to protect the Al electrode film from corrosion resistance due to hydrofluoric acid used in anodic oxidation described later, SiC is deposited on the Al electrode film by sputtering. At this time, it is preferable that the thickness of SiC is about several nanometers so that carrier tunnel conduction can be sufficiently performed, or a film that also functions as the hole blocking layer 12 using P-type SiC.

  Next, a polysilicon layer of several μm is formed by plasma CVD. Subsequently, the polysilicon layer is anodized. FIG. 5 is a schematic diagram of the anodic oxidation method. A mixed solution of hydrofluoric acid and ethanol is placed in a container 50 made of tetrafluoroethylene resin, and a substrate 51 with the polysilicon layer as the upper surface side is placed on the bottom of the container 50. Then, under the irradiation of the tungsten lamp 52, an anodic oxidation is performed by passing a current between the polysilicon layer and the mixed solution.

  At this time, it is necessary to immerse only the upper surface of the polysilicon layer in a mixed solution of hydrofluoric acid and ethanol. A platinum electrode 53 is provided in the solution to serve as a cathode, and a conducting wire is drawn from the Al electrode film to serve as an anode. Anodic oxidation is advanced while controlling the current value flowing between the anode and cathode. In the photoelectric conversion film stacked solid-state imaging device of the present embodiment, the electrode film that is the source of the pixel electrode film deposited on the photoelectric conversion film is used as it is as an anodizing electrode, so that anodization can be easily performed. There is.

  In the porous silicon obtained by anodic oxidation of the polysilicon layer, nanosilicon crystal grains covered with a thin oxide film of several nanometers are continuously formed. By changing the current density, the hydrofluoric acid ratio of the solution, the characteristics of the substrate (such as the doping type and doping density of the polysilicon layer), the temperature, the amount of light irradiation, etc. It is possible to control the volume density, the speed at which the porosity is increased, and the like.

  Further, by passing a current similarly in sulfuric acid after anodic oxidation, the surface of the nanosilicon crystal grains can be oxidized to control the average diameter or to reduce crystal defects. Therefore, by changing these conditions, a porous silicon film containing nanosilicon crystal grains having a particle size and density suitable for absorption of light of B, G, and R can be obtained as a photoelectric conversion film.

  Next, as shown in FIG. 3, photoelectric conversion is performed in order to separate the Al electrode film for each pixel and to extend the tungsten plugs 26 and 27 further upward to connect to the respective pixel electrode films 16 and 21. The porous silicon film formed as the film 13 is coated with a resist, the porous silicon film 13 and the SiC film (blocking layer 12) are dry-etched with a fluorine-based gas, and the Al electrode film is further dry-etched with a chlorine-based gas. Separate the pixels.

Next, as shown in FIG. 4, the etched portion is filled with SiO ₂ by sputtering, and then planarized. Then, an ITO electrode is formed on the entire planarized surface by sputtering, and this ITO electrode film is used as the common electrode film 14.

  Next, although not shown, dry etching and plug embedding are performed in order to extend the tungsten plugs 26 and 27 erected in the signal charge storage regions 3 and 4 to an upper layer, and the same processing as described above is repeated. The photoelectric conversion film 18 that performs photoelectric conversion of green light and the photoelectric conversion film 23 that performs photoelectric conversion of blue light are formed by anodic oxidation. However, for the green and blue light photoelectric conversion films, both the pixel electrode and the common electrode are ITO electrodes made of a transparent ITO film. In this case, the grain size of the nanosilicon crystal grains is set to an appropriate grain size by setting the conditions for anodic oxidation appropriately. As described above, the photoelectric conversion film laminated solid-state imaging device shown in FIG. 1 is manufactured.

(Second Embodiment)
FIG. 6 is a schematic cross-sectional view of one pixel of a photoelectric conversion film stacked solid-state imaging device according to the second embodiment of the present invention, and FIGS. 7, 8, and 9 are manufacturing process diagrams thereof. The same members as those in the first embodiment are denoted by the same reference numerals. The uppermost layer 28 is a transparent insulating film that also serves as a protective film.

  In the photoelectric conversion film stacked solid-state imaging device according to the first embodiment described above, the pixel electrode films 11, 16, and 21 are provided below the photoelectric conversion films 13, 18, and 23 (on the substrate 1 side). Common electrode films 14, 19, and 24 are provided above the conversion films 13, 18, and 23 (light incident side). In contrast, in the present embodiment, conversely, the common electrode films 14, 19, and 24 are provided on the lower side (substrate 1 side) of the photoelectric conversion films 13, 18, and 23, and the pixel electrodes are provided on the upper side (light incident side). Films 11, 16, and 21 are provided. The manufacturing process is also substantially the same as in the first embodiment, and the components for connecting the tungsten plugs 25, 26, 27 from the upper side of the pixel electrode films 11, 16, 21 are different.

  In the case of the first embodiment, when the polysilicon layer is anodized in order to form the photoelectric conversion films 13, 18, and 23, the Al electrode film that is the source of the pixel electrode film is used as the anode. As shown in FIG. 1, the Al electrode film is connected to the signal charge storage regions 2, 3, and 4 via tungsten plugs (vertical wiring), and the signal charge storage regions 2, 3, and 4 are connected to each other. It is connected to a signal readout circuit (not shown). For this reason, when anodization is performed by applying a voltage using the Al electrode film as an anode, the voltage has an effect on the signal readout circuit.

  On the other hand, in this embodiment, when the polysilicon layer is anodized, the common electrode film on the substrate 1 side is not connected to the signal readout circuit, so that the influence at the time of anodization does not affect the signal readout circuit. There are advantages.

  In the embodiment shown in FIGS. 1 and 6, only one pixel is shown, but a solid-state imaging device mounted on a digital camera or the like is formed by arranging the pixels two-dimensionally in an array. . In this case, in order to avoid color mixing between pixels, it is preferable to form a transparent insulating film (protective film) on the uppermost surface of the element and to form a light shielding film having an opening for each pixel on the transparent insulating film. Further, it is preferable to form a microlens for each pixel to improve the light collection efficiency.

  Further, any one of an ultraviolet cut filter that cuts ultraviolet rays that are invisible light photoelectrically converted by the uppermost photoelectric conversion film 23 before entering the photoelectric conversion film 23, and three layers of photoelectric conversion films 13, 18, and 23. However, an infrared cut filter that cuts the infrared rays that reach the semiconductor substrate without photoelectric conversion before the semiconductor substrate is provided, or light that is not absorbed is blocked in the insulating film formed on the upper layer of the porous silicon layer. A film may be provided. Alternatively, the lowermost electrode film (the pixel electrode film 11 in FIG. 1 and the common electrode film 14 in FIG. 6) may be made of an opaque metal film to cut off infrared rays that have not been absorbed in the upper layer.

  As described above, the photoelectric conversion film formed of the porous silicon layer used in the photoelectric conversion film stacked solid-state imaging device of this embodiment has high resolution characteristics, uniformity, and easy deposition on the base substrate. However, it has the same thermal stability as that of the crystal material, carrier dynamic characteristics, and the possibility of avalanche multiplication, and has an advantage that the absorption wavelength can be adjusted both in the film thickness direction and in the substrate in-plane direction.

  In the above-described embodiment, silicon particles are used as the nanoparticles. However, in order to greatly change the band gap, other semiconductor nanocrystals such as germanium, silicon germanium, and SiC similar to silicon nanocrystals can be used. It is.

  The photoelectric conversion film laminated image sensor of the present invention can be used as an image sensor used in a digital camera, a video camera, a facsimile, a scanner, a copying machine, etc., and can also be used as an optical sensor such as a biosensor or a chemical sensor. It is.

It is a cross-sectional schematic diagram for 1 pixel of the photoelectric converting film laminated | stacked solid-state image sensor which concerns on the 1st Embodiment of this invention. FIG. 3 is a manufacturing process diagram of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 3 is a manufacturing process diagram of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 3 is a manufacturing process diagram of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 2 is a schematic diagram of anodization produced by anodizing the photoelectric conversion film of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. It is a cross-sectional schematic diagram for 1 pixel of the photoelectric conversion film laminated | stacked solid-state image sensor which concerns on the 2nd Embodiment of this invention. FIG. 7 is a manufacturing process diagram of the photoelectric conversion film laminated solid-state imaging device shown in FIG. 6. FIG. 7 is a manufacturing process diagram of the photoelectric conversion film laminated solid-state imaging device shown in FIG. 6. FIG. 7 is a manufacturing process diagram of the photoelectric conversion film laminated solid-state imaging device shown in FIG. 6.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Red signal charge storage area 3 Green signal charge storage area 4 Blue signal charge storage area 11 Red pixel electrode film 13 Red photoelectric conversion film (porous silicon layer)
14 Common electrode film for red 15 Interlayer insulating layer 16 Pixel electrode film for green 18 Photoelectric conversion film for green (porous silicon layer)
19 Green common electrode film 20 Interlayer insulating layer 21 Blue pixel electrode film 23 Blue photoelectric conversion film (porous silicon layer)
24 Blue common electrode film 25, 26, 27 Vertical wiring (columnar electrode)

Claims (6)

A photoelectric conversion film sandwiched between a common electrode film and a pixel electrode film corresponding to a pixel is stacked on a semiconductor substrate, and the pixel electrode film and a charge storage portion formed on the semiconductor substrate are connected by a columnar electrode. A photoelectric conversion film laminated solid-state imaging device, wherein the photoelectric conversion film is composed of a porous silicon layer. The photoelectric conversion film sandwiched between the common electrode film and the pixel electrode film corresponding to the pixel is laminated on the semiconductor substrate via the insulating layer, and the pixel electrode is attached to the photoelectric conversion film for each layer. In a photoelectric conversion film stacked solid-state imaging device in which a film and a charge storage portion formed on the semiconductor substrate are connected by a columnar electrode, the absorption peak of the photoelectric conversion film of the first layer is 420 nm to 500 nm, Each photoelectric conversion film is composed of a porous silicon layer so that the absorption peak of the photoelectric conversion film is 500 nm to 580 nm, and the absorption peak of the photoelectric conversion film of the third layer is 580 nm to 660 nm. Film stack type solid-state imaging device. 3. The photoelectric conversion film stacked solid-state imaging device according to claim 1, wherein the porous silicon layer is manufactured by anodizing a polysilicon layer. 4. 4. The photoelectric conversion film stacked solid-state imaging device according to claim 1, wherein the pixel electrode film is provided on the semiconductor substrate side of the corresponding photoelectric conversion film. 5. 4. The photoelectric conversion film stacked solid-state imaging device according to claim 1, wherein the pixel electrode film is provided on a light incident side of the corresponding photoelectric conversion film. 5. An electrode film is formed on a semiconductor substrate on which a signal readout circuit is formed via an insulating layer, a polysilicon layer is formed on the electrode film, and the electrode film and the solution are contained in a solution containing hydrofluoric acid. 6. The photoelectric conversion film stacked solid-state imaging device according to claim 1, wherein a current is passed between the first and second polysilicon layers, and the polysilicon layer is anodized to form the porous silicon layer. Manufacturing method.

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