JP2006222463A - Light-emitting diode - Google Patents

Light-emitting diode Download PDF

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Publication number
JP2006222463A
JP2006222463A JP2006141977A JP2006141977A JP2006222463A JP 2006222463 A JP2006222463 A JP 2006222463A JP 2006141977 A JP2006141977 A JP 2006141977A JP 2006141977 A JP2006141977 A JP 2006141977A JP 2006222463 A JP2006222463 A JP 2006222463A
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light
compound semiconductor
wavelength
gallium nitride
emitting element
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JP4109297B2 (en
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Yoshiaki Tadatsu
芳昭 多田津
Shuji Nakamura
修二 中村
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Abstract

<P>PROBLEM TO BE SOLVED: To improve the visibility and brightness of a light-emitting diode with light-emitting elements made of gallium nitride compound semiconductor materials. <P>SOLUTION: A light-emitting diode contains n-type or p-type laminated gallium nitride compound semiconductor light-emitting elements; and fluorescent paints or fluorescent pigments that emit the visible light of wavelength longer than excitation wavelength through excitation, by the visible light emitted from the above gallium nitride compound semiconductor light-emitting elements to compensate the colors of the above gallium nitride compound semiconductor light-emitting elements. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は発光素子を樹脂モールドで包囲してなる発光ダイオード（以下ＬＥＤという）に係り、特に一種類の発光素子で多種類の発光ができ、さらに高輝度な波長変換発光ダイオードに関する。   The present invention relates to a light emitting diode (hereinafter referred to as an LED) in which a light emitting element is surrounded by a resin mold, and more particularly to a wavelength conversion light emitting diode capable of emitting various types of light with a single type of light emitting element and having higher brightness.

一般に、ＬＥＤは図１に示すような構造を有している。１は１ｍｍ角以下に切断された例えばＧａＡｌＡｓ、ＧａＰ等よりなる発光素子、２はメタルステム、３はメタルポスト、４は発光素子を包囲する樹脂モールドである。発光素子１の裏面電極はメタルステム２に銀ペースト等で接着され電気的に接続されており、発光素子１の表面電極は他端子であるメタルポスト３から伸ばされた金線によりその表面でワイヤボンドされ、さらに発光素子１は透明な樹脂モールド４でモールドされている。   In general, an LED has a structure as shown in FIG. Reference numeral 1 denotes a light emitting element made of, for example, GaAlAs, GaP or the like cut to 1 mm square or less, 2 is a metal stem, 3 is a metal post, and 4 is a resin mold surrounding the light emitting element. The back electrode of the light emitting element 1 is bonded and electrically connected to the metal stem 2 with silver paste or the like, and the surface electrode of the light emitting element 1 is wired on the surface by a gold wire extended from the metal post 3 which is another terminal. Further, the light emitting element 1 is molded with a transparent resin mold 4.

通常、樹脂モールド４は、発光素子の発光を空気中に効率よく放出する目的で、屈折率が高く、かつ透明度の高い樹脂が選択されるが、他に、その発光素子の発光色を変換する目的で、あるいは色を補正する目的で、その樹脂モールド４の中に着色剤として無機顔料、または有機顔料が混入される場合がある。例えば、ＧａＰの半導体材料を有する緑色発光素子の樹脂モールド中に、赤色顔料を添加すれば発光色は白色とすることができる。   Usually, a resin having a high refractive index and high transparency is selected for the resin mold 4 for the purpose of efficiently emitting light emitted from the light emitting element into the air. In addition, the resin mold 4 converts the light emission color of the light emitting element. An inorganic pigment or an organic pigment may be mixed as a colorant in the resin mold 4 for the purpose or for the purpose of correcting the color. For example, if a red pigment is added to a resin mold of a green light emitting element having a GaP semiconductor material, the emission color can be made white.

しかしながら、従来、樹脂モールドに着色剤を添加して波長を変換するという技術はほとんど実用化されておらず、着色剤により色補正する技術がわずかに使われているのみである。なぜなら、樹脂モールドに、波長を変換できるほどの非発光物質である着色剤を添加すると、ＬＥＤそのもの自体の輝度が大きく低下してしまうからである。   However, conventionally, a technique for converting a wavelength by adding a colorant to a resin mold has hardly been put to practical use, and a technique for color correction with a colorant is used only slightly. This is because if the colorant, which is a non-light-emitting substance capable of converting the wavelength, is added to the resin mold, the luminance of the LED itself is greatly reduced.

ところで、現在、ＬＥＤとして実用化されているのは、赤外、赤、黄色、緑色発光のＬＥＤであり、青色または紫外のＬＥＤは未だ実用化されていない。青色、紫外発光の発光素子はII-VI族のＺｎＳｅ、IV-IV族のＳｉＣ、III-V族のＧａＮ等の半導体材料を用いて研究が進められ、最近、その中でも一般式がＧａXＡｌ1-XＮ（但しXは０≦X≦１である。）で表される窒化ガリウム系化合物半導体が、常温で、比較的優れた発光を示すことが発表され注目されている。また、窒化ガリウム系化合物半導体を用いて、初めてｐｎ接合を実現したＬＥＤが発表されている（応用物理，６０巻，２号，ｐ１６３〜ｐ１６６，１９９１）。それによるとｐｎ接合の窒化ガリウム系化合物半導体を有するＬＥＤの発光波長は、主として４３０ｎｍ付近にあり、さらに３７０ｎｍ付近の紫外域にも発光ピークを有している。その波長は上記半導体材料の中で最も短い波長である。しかし、そのＬＥＤは発光波長が示すように紫色に近い発光色を有しているため視感度が悪いという欠点がある。   Incidentally, infrared, red, yellow, and green light emitting LEDs are currently put into practical use as LEDs, and blue or ultraviolet LEDs have not been put into practical use yet. Blue and ultraviolet light emitting devices have been studied using semiconductor materials such as II-VI group ZnSe, IV-IV group SiC, III-V group GaN, etc. Recently, the general formula is GaXAl1-XN. It has been noted that a gallium nitride compound semiconductor represented by (where X is 0 ≦ X ≦ 1) exhibits relatively excellent light emission at room temperature. In addition, an LED which has realized a pn junction for the first time using a gallium nitride compound semiconductor has been announced (Applied Physics, Vol. 60, No. 2, p163 to p166, 1991). According to this, the emission wavelength of an LED having a pn junction gallium nitride compound semiconductor is mainly in the vicinity of 430 nm, and also has an emission peak in the ultraviolet region near 370 nm. The wavelength is the shortest wavelength among the semiconductor materials. However, since the LED has a light emission color close to purple as indicated by the light emission wavelength, there is a drawback that the visibility is poor.

本発明はこのような事情を鑑みなされたもので、その目的とするところは、発光ピークが４３０ｎｍ付近、および３７０ｎｍ付近にある窒化ガリウム系化合物半導体材料よりなる発光素子を有するＬＥＤの視感度を良くし、またその輝度を向上させることにある。   The present invention has been made in view of such circumstances, and an object of the present invention is to improve the visibility of an LED having a light emitting element made of a gallium nitride compound semiconductor material having an emission peak near 430 nm and 370 nm. And to improve the brightness.

本発明は、断面が凹状のメタルに配置されると共に、ｎ型及びｐ型に積層されてなる窒化ガリウム系化合物半導体である発光素子と、この発光素子を包囲する断面が凸レンズ状樹脂モールドと、この発光素子を包囲する凸レンズ状樹脂モールド中にあって、青色を発光する発光素子からの第１の可視光により励起されて、励起波長よりも長波長の第２の可視光を出して発光ダイオードの視感度を良くする蛍光顔料を有することを特徴とする発光ダイオードである。またｎ型及びｐ型に積層された窒化ガリウム系化合物半導体である発光素子からの光を変換する蛍光染料又は蛍光顔料が添加された波長変換発光ダイオード用樹脂において、前記波長変換発光ダイオード用樹脂は、前記発光素子が配設されている凹状部分内に配置しており、前記波長変換発光ダイオード用樹脂中の蛍光染料又は蛍光顔料は、発光素子からの青色の可視光により励起されて、励起波長よりも長波長の可視光を出して発光ダイオードの視感度を良くして成ることを特徴とする蛍光染料又は蛍光顔料が添加された波長変換発光ダイオード用樹脂である。   The present invention provides a light emitting element that is a gallium nitride compound semiconductor that is disposed in a metal having a concave cross section and is laminated in an n-type and a p-type, and a convex lens-shaped resin mold that surrounds the light emitting element, A light emitting diode which is in a convex lens-shaped resin mold surrounding the light emitting element and is excited by the first visible light from the light emitting element emitting blue light and emits second visible light having a wavelength longer than the excitation wavelength. A light-emitting diode having a fluorescent pigment that improves the visual sensitivity of the light-emitting diode. In addition, in the wavelength conversion light emitting diode resin to which a fluorescent dye or fluorescent pigment that converts light from a light emitting element that is a gallium nitride compound semiconductor laminated in an n-type and a p-type is added, the wavelength conversion light-emitting diode resin is: The fluorescent dye or fluorescent pigment in the resin for wavelength-converting light-emitting diodes is excited by the blue visible light from the light-emitting element, and is disposed in the concave portion where the light-emitting element is disposed. A resin for wavelength-converting light-emitting diodes, to which a fluorescent dye or a fluorescent pigment is added, characterized by emitting visible light having a longer wavelength and improving the visibility of the light-emitting diodes.

蛍光染料、蛍光顔料は、一般に短波長の光によって励起され、励起波長よりも長波長光を発光する。逆に長波長の光によって励起されて短波長の光を発光する蛍光顔料もあるが、それはエネルギー効率が非常に悪く微弱にしか発光しない。前記したように窒化ガリウム系化合物半導体はＬＥＤに使用される半導体材料中で最も短波長側にその発光ピークを有するものであり、しかも紫外域にも発光ピークを有している。そのためそれを発光素子の材料として使用した場合、その発光素子を包囲する樹脂モールドに蛍光染料、蛍光顔料を添加することにより、最も好適にそれら蛍光物質を励起することができる。したがって青色ＬＥＤの色補正はいうにおよばず、蛍光染料、蛍光顔料の種類によって数々の波長の光を変換することができる。さらに、短波長の光を長波長に変え、エネルギー効率がよい為、添加する蛍光染料、蛍光顔料が微量で済み、輝度の低下の点からも非常に好都合である。   Fluorescent dyes and fluorescent pigments are generally excited by light having a short wavelength and emit light having a wavelength longer than the excitation wavelength. Conversely, there are fluorescent pigments that are excited by long-wavelength light to emit short-wavelength light, but they are very energy efficient and emit only faint light. As described above, the gallium nitride-based compound semiconductor has a light emission peak on the shortest wavelength side among semiconductor materials used in LEDs, and also has a light emission peak in the ultraviolet region. Therefore, when it is used as a material for a light-emitting element, the fluorescent substance can be excited most preferably by adding a fluorescent dye or fluorescent pigment to a resin mold surrounding the light-emitting element. Therefore, it goes without saying that the color of the blue LED is corrected, and light of various wavelengths can be converted depending on the type of fluorescent dye or fluorescent pigment. Furthermore, since the short wavelength light is changed to the long wavelength and the energy efficiency is high, the amount of the fluorescent dye and fluorescent pigment to be added is very small, which is very convenient from the viewpoint of lowering the luminance.

図２は本発明のＬＥＤの構造を示す一実施例である。１１はサファイア基板の上にＧａＡｌＮがｎ型およびｐ型に積層されてなる青色発光素子、２および３は図１と同じくメタルステム、メタルポスト、４は発光素子を包囲する樹脂モールドである。発光素子１１の裏面はサファイアの絶縁基板であり裏面から電極を取り出せないため、ＧａＡｌＮ層のｎ電極をメタルステム２と電気的に接続するため、ＧａＡｌＮ層をエッチングしてｎ型層の表面を露出させてオーミック電極を付け、金線によって電気的に接続する手法が取られている。また他の電極は図１と同様にメタルポスト３から伸ばした金線によりｐ型層の表面でワイヤボンドされている。さらに樹脂モールド４には４２０〜４４０ｎｍ付近の波長によって励起されて４８０ｎｍに発光ピークを有する波長を発光する蛍光染料５が添加されている。   FIG. 2 shows an example of the structure of the LED of the present invention. Reference numeral 11 denotes a blue light-emitting element in which GaAlN is laminated in an n-type and p-type on a sapphire substrate, 2 and 3 are metal stems as in FIG. 1, and metal posts 4 are resin molds surrounding the light-emitting elements. Since the back surface of the light emitting element 11 is an insulating substrate of sapphire and electrodes cannot be taken out from the back surface, the GaAlN layer is etched to expose the surface of the n-type layer in order to electrically connect the n electrode of the GaAlN layer to the metal stem 2. A method of attaching ohmic electrodes and electrically connecting them with a gold wire is used. The other electrodes are wire-bonded on the surface of the p-type layer by a gold wire extended from the metal post 3 as in FIG. Further, a fluorescent dye 5 that emits a wavelength having an emission peak at 480 nm when excited by a wavelength in the vicinity of 420 to 440 nm is added to the resin mold 4.

従来の一ＬＥＤの構造を示す模式断面図。The schematic cross section which shows the structure of one conventional LED. 本発明のＬＥＤの一実施例の構造を示す模式断面図。The schematic cross section which shows the structure of one Example of LED of this invention.

符号の説明Explanation of symbols

１１・・・発光素子
２・・・メタルステム
３・・・メタルポスト
４・・・樹脂モールド
５・・・蛍光染料 DESCRIPTION OF SYMBOLS 11 ... Light emitting element 2 ... Metal stem 3 ... Metal post 4 ... Resin mold 5 ... Fluorescent dye

Claims (1)

ｎ型及びｐ型に積層されてなる窒化ガリウム系化合物半導体発光素子と、前記窒化ガリウム系化合物半導体発光素子からの可視光により励起されて、励起波長よりも長波長の可視光を出して前記窒化ガリウム系化合物半導体発光素子の色補正をする蛍光染料又は蛍光顔料と、を有することを特徴とする発光ダイオード。
Gallium nitride-based compound semiconductor light-emitting device stacked in n-type and p-type, and the nitridation by emitting visible light having a wavelength longer than the excitation wavelength by being excited by visible light from the gallium nitride-based compound semiconductor light-emitting device A light emitting diode comprising: a fluorescent dye or a fluorescent pigment for color correction of a gallium compound semiconductor light emitting element.
JP2006141977A 2006-05-22 2006-05-22 Light emitting diode Expired - Lifetime JP4109297B2 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147366U (en) * 1986-03-11 1987-09-17
JPS6413161A (en) * 1987-07-07 1989-01-18 Canon Kk Printer
JPH01179471A (en) * 1988-01-07 1989-07-17 Natl Inst For Res In Inorg Mater P-n junction type light emitting element of cubic boron nitride
JPH03203388A (en) * 1989-12-29 1991-09-05 Matsushita Electric Ind Co Ltd Semiconductor light emitting element and its manufacture
JPH05152609A (en) * 1991-11-25 1993-06-18 Nichia Chem Ind Ltd Light emitting diode
JP2005252312A (en) * 2005-05-30 2005-09-15 Nichia Chem Ind Ltd Light-emitting diode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147366U (en) * 1986-03-11 1987-09-17
JPS6413161A (en) * 1987-07-07 1989-01-18 Canon Kk Printer
JPH01179471A (en) * 1988-01-07 1989-07-17 Natl Inst For Res In Inorg Mater P-n junction type light emitting element of cubic boron nitride
JPH03203388A (en) * 1989-12-29 1991-09-05 Matsushita Electric Ind Co Ltd Semiconductor light emitting element and its manufacture
JPH05152609A (en) * 1991-11-25 1993-06-18 Nichia Chem Ind Ltd Light emitting diode
JP2005252312A (en) * 2005-05-30 2005-09-15 Nichia Chem Ind Ltd Light-emitting diode

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