JP2006216750A - Method for sealing electronic part - Google Patents

Method for sealing electronic part Download PDF

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Publication number
JP2006216750A
JP2006216750A JP2005027457A JP2005027457A JP2006216750A JP 2006216750 A JP2006216750 A JP 2006216750A JP 2005027457 A JP2005027457 A JP 2005027457A JP 2005027457 A JP2005027457 A JP 2005027457A JP 2006216750 A JP2006216750 A JP 2006216750A
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Prior art keywords
substrate
mold
resin
metallic material
ceramic substrate
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Kazumasa Shiraishi
白石　一雅
Yuji Fujimori
雄二 藤森
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SAE Magnetics HK Ltd
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SAE Magnetics HK Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for sealing an electronic part easily sealing the whole substrate composed of a nonmetallic material at a low cost. <P>SOLUTION: A nonmetallic-material substrate loading the electronic part 10 is installed in a cavity 13a for a metal mold 13 so as not to be brought into contact directly with the metal mold 13, and a molding is conducted by a resin. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、表面実装部品（ＳＭＤ）等の電子部品が実装されている基板を樹脂封止する方法に関する。   The present invention relates to a method for resin-sealing a substrate on which an electronic component such as a surface mount component (SMD) is mounted.

半導体チップを樹脂封止する技術として、半導体チップとボンディングしたリードフレームを金型にセットし、流動性を持たせた樹脂をこの金型に流し込むことによってモールドするトランスファモールド法等のモールド成型法が良く知られている（例えば特許文献１及び２）。   As a technique for resin-sealing a semiconductor chip, there is a molding method such as a transfer molding method in which a lead frame bonded with a semiconductor chip is set in a mold and a resin having fluidity is poured into the mold. It is well known (for example, Patent Documents 1 and 2).

半導体チップの場合、リードフレームは金属材料であるからこれを金型で挟み込んでセットしても、損傷を受けることはない。これに対して、半導体チップではなく、例えばＳＭＤ等の電子部品を搭載したセラミック基板やガラスエポキシ基板の場合、モールド成型しようとすると、このセラミック基板やガラスエポキシ基板が金型に挟まれてセットされることから基板自体に損傷が生じてしまう。   In the case of a semiconductor chip, the lead frame is a metal material, so even if it is sandwiched and set by a mold, it will not be damaged. On the other hand, in the case of a ceramic substrate or a glass epoxy substrate on which electronic parts such as SMD are mounted instead of a semiconductor chip, the ceramic substrate or the glass epoxy substrate is set by being sandwiched between molds when trying to mold. As a result, the substrate itself is damaged.

このため、セラミック基板やガラスエポキシ基板に対しては、モールド成型法を用いず、液状の樹脂を局所的にコーティング又はモールディングするポッティング方式で封止することが行われている（例えば特許文献３）。   For this reason, a ceramic substrate or a glass epoxy substrate is sealed by a potting method in which a liquid resin is locally coated or molded without using a molding method (for example, Patent Document 3). .

特開平５−３２６５９１号公報JP-A-5-326591 特開平６−０２１１２４号公報JP-A-6-021124 再表０１／０６１７５４号公報No. 01/061754

しかしながら、ポッティング法による封止は、液状の樹脂を使用するため、流動性調整が非常に難しいことから、生産性を高めることが困難である。また、製造コストが高く、さらに、基板全体を封止することができないという問題点を有している。   However, since sealing by the potting method uses a liquid resin, it is very difficult to adjust the fluidity, and it is difficult to increase productivity. In addition, the manufacturing cost is high, and the entire substrate cannot be sealed.

従って本発明は、従来技術の上述の問題点を解消しようとするものであり、その目的は、非金属材料による基板全体を容易にかつ低コストで封止できる電子部品の封止方法を提供することにある。   Accordingly, the present invention is intended to solve the above-described problems of the prior art, and an object of the present invention is to provide an electronic component sealing method capable of easily and inexpensively sealing an entire substrate made of a nonmetallic material. There is.

本発明によれば、電子部品を搭載した非金属材料基板を、金型に直接接触しないようにこの金型のキャビティ内に設置し、樹脂によるモールド成型を行なう電子部品の封止方法が提供される。   According to the present invention, there is provided an electronic component sealing method in which a non-metallic material substrate on which an electronic component is mounted is placed in a cavity of this mold so as not to directly contact the mold, and molding is performed with a resin. The

非金属材料基板が金型に直接接触しないように金型内にセットしてモールド成型を行なっているため、この基板に損傷を与えることなくモールド成型法の利点等を得ることができる。即ち、基板全体を容易にかつ低コストで封止することができ、しかも信頼性の高い封止が可能となる。   Since molding is performed by setting in a mold so that the non-metallic material substrate does not directly contact the mold, advantages of the molding method and the like can be obtained without damaging the substrate. That is, the entire substrate can be easily and inexpensively sealed, and highly reliable sealing is possible.

非金属材料基板の外周部に緩衝部材を設け、非金属材料基板を、緩衝部材を介して金型で挟むことによりキャビティ内に設置することが好ましい。   It is preferable that a buffer member is provided on the outer peripheral portion of the nonmetallic material substrate, and the nonmetallic material substrate is placed in the cavity by sandwiching the nonmetallic material substrate with a mold through the buffer member.

この場合、モールド成型の後、非金属材料基板の外周部及び緩衝部材が切り離される。   In this case, after molding, the outer peripheral portion of the nonmetallic material substrate and the buffer member are separated.

緩衝部材が、樹脂材料からなることが好ましい。   It is preferable that the buffer member is made of a resin material.

非金属材料基板の電子部品搭載面とは反対側の面に、非金属材料基板より大きなサイズの補助基板を固着し、補助基板の外周部を金型で挟むことによりキャビティ内に設置することも好ましい。   An auxiliary board having a size larger than that of the non-metallic material substrate is fixed to the surface of the non-metallic material board opposite to the electronic component mounting surface, and the outer peripheral portion of the auxiliary board is sandwiched between molds and installed in the cavity preferable.

この場合、モールド成型の後、補助基板が非金属材料基板から取り外される。   In this case, the auxiliary substrate is removed from the non-metallic material substrate after molding.

補助基板が、金属材料板又は樹脂材料板であることが好ましい。   The auxiliary substrate is preferably a metal material plate or a resin material plate.

非金属材料基板が、樹脂基板、セラミック基板、ガラスエポキシ基板又はガラス基板であることも好ましい。   It is also preferable that the nonmetallic material substrate is a resin substrate, a ceramic substrate, a glass epoxy substrate, or a glass substrate.

本発明によれば、非金属材料基板に損傷を与えることなく、基板全体を容易にかつ低コストで封止することができ、しかも信頼性の高い封止が可能となる。   According to the present invention, the entire substrate can be easily and inexpensively sealed without damaging the non-metallic material substrate, and highly reliable sealing is possible.

図１は本発明の一実施形態として、トランスファモールド法を用いた封止工程の一例を概略的に示す断面図であり、図２はこの実施形態において、緩衝テープを貼り付けた状態のセラミック基板の平面図である。   FIG. 1 is a sectional view schematically showing an example of a sealing process using a transfer mold method as one embodiment of the present invention, and FIG. 2 is a ceramic substrate with a buffer tape attached in this embodiment. FIG.

まず、図１（Ａ）の断面図及び図２の平面図に示すように、ＳＭＤ等の電子部品１０を表面に実装し、裏面に外部電極端子等を形成した非金属材料基板、例えばセラミック基板１１の外周部の表裏両面に、緩衝部材として、例えばフッ素樹脂やポリイミド樹脂等の樹脂材料による緩衝テープ１２を貼り付ける。緩衝テープを貼り付ける代わりに、同様の機能を有する部材を貼り付けるか又は膜として形成しても良い。   First, as shown in the cross-sectional view of FIG. 1A and the plan view of FIG. 2, a non-metallic material substrate such as a ceramic substrate in which an electronic component 10 such as SMD is mounted on the front surface and external electrode terminals and the like are formed on the back surface. A buffer tape 12 made of, for example, a resin material such as a fluororesin or a polyimide resin is attached to both the front and back surfaces of the outer peripheral portion of 11 as a buffer member. Instead of attaching the buffer tape, a member having a similar function may be attached or formed as a film.

次いで、図１（Ｂ）に示すように、セラミック基板１１を金型１３のキャビティ１３ａ内にセットする。この場合、金型１３がこの緩衝テープ１２を介してセラミック基板１１の外周部を上下から間接的に挟み込むようにセットする。この場合、高圧でトランスファされる熱可塑性樹脂が金型１３とセラミック基板１１との間の隙間から流れでないような密封構造を構成する。また、その熱可塑性樹脂がセラミック基板１１の裏面に回りこむ構成の場合は、例えばフッ素樹脂やポリイミド樹脂等の樹脂による被覆体１４を裏面に貼り付けておく。   Next, as shown in FIG. 1B, the ceramic substrate 11 is set in the cavity 13 a of the mold 13. In this case, the mold 13 is set so as to indirectly sandwich the outer peripheral portion of the ceramic substrate 11 from above and below via the buffer tape 12. In this case, a sealing structure is formed in which the thermoplastic resin transferred at high pressure does not flow from the gap between the mold 13 and the ceramic substrate 11. When the thermoplastic resin is configured to wrap around the back surface of the ceramic substrate 11, for example, a cover 14 made of a resin such as a fluororesin or a polyimide resin is attached to the back surface.

次いで、図１（Ｃ）に示すように、エポキシ樹脂やポリイミド樹脂等の熱可塑性樹脂によるトランスファモールド成型を行って、モールド樹脂１５を形成する。具体的には、予備加熱した樹脂タブレットを金型１３に投入してプランジャ１６で加圧し、流動樹脂をキャビティ１３ａ内にトランスファした後、熱硬化させる。   Next, as shown in FIG. 1C, transfer molding is performed using a thermoplastic resin such as an epoxy resin or a polyimide resin to form a mold resin 15. Specifically, a preheated resin tablet is put into the mold 13 and pressurized by the plunger 16, and the fluidized resin is transferred into the cavity 13a and then thermally cured.

次いで、図１（Ｄ）に示すように、金型１３を取り外し、その後、図１（Ｅ）に示すように、緩衝テープ１２が除去されるように、モールド樹脂１５及びセラミック基板１１の外周部を切断する。   Next, as shown in FIG. 1 (D), the mold 13 is removed, and then, as shown in FIG. 1 (E), the outer periphery of the mold resin 15 and the ceramic substrate 11 so that the buffer tape 12 is removed. Disconnect.

このように本実施形態によれば、セラミック基板１１が金型１３に直接接触しないように、セラミック基板１１の外周部の表裏両面に緩衝テープ１２が貼り付けられ、この緩衝テープ１２を介して金型１３がセラミック基板１１を支持しているため、この基板１１に損傷を与えることなく、基板全体を容易にかつ低コストで封止することができ、しかも信頼性の高い封止が可能となる。   As described above, according to this embodiment, the buffer tape 12 is attached to both the front and back surfaces of the outer peripheral portion of the ceramic substrate 11 so that the ceramic substrate 11 does not directly contact the mold 13. Since the mold 13 supports the ceramic substrate 11, the entire substrate can be easily and inexpensively sealed without damaging the substrate 11, and highly reliable sealing is possible. .

なお、非金属材料基板としては、セラミック基板の他に樹脂基板、ガラスエポキシ基板又はガラス基板が適用可能である。   In addition to the ceramic substrate, a resin substrate, a glass epoxy substrate, or a glass substrate can be used as the nonmetallic material substrate.

図３は本発明の他の実施形態として、トランスファモールド法を用いた封止工程の一例を概略的に示す断面図であり、図４はこの実施形態において、補助基板を貼り付けた状態のセラミック基板の平面図である。   FIG. 3 is a cross-sectional view schematically showing an example of a sealing process using a transfer mold method as another embodiment of the present invention, and FIG. 4 shows a ceramic with an auxiliary substrate attached in this embodiment. It is a top view of a board | substrate.

まず、図３（Ａ）の断面図及び図４の平面図に示すように、ＳＭＤ等の電子部品３０を表面に実装し、裏面に外部電極端子等を形成した非金属材料基板、例えばセラミック基板３１の裏面に、このセラミック基板３１より大きいサイズの補助基板３２、例えば金属材料板又は樹脂材料板、を貼り付ける。   First, as shown in the cross-sectional view of FIG. 3A and the plan view of FIG. 4, a non-metallic material substrate such as a ceramic substrate in which an electronic component 30 such as SMD is mounted on the front surface and external electrode terminals and the like are formed on the back surface. An auxiliary substrate 32 having a size larger than the ceramic substrate 31, for example, a metal material plate or a resin material plate is attached to the back surface of the ceramic substrate 31.

次いで、図３（Ｂ）に示すように、補助基板３２付きのセラミック基板３１を金型３３のキャビティ３３ａ内にセットする。この場合、金型３３が、セラミック基板３１に接触せずに補助基板３２の外周部を上下から挟み込むようにセットする。   Next, as shown in FIG. 3B, the ceramic substrate 31 with the auxiliary substrate 32 is set in the cavity 33 a of the mold 33. In this case, the mold 33 is set so as to sandwich the outer peripheral portion of the auxiliary substrate 32 from above and below without contacting the ceramic substrate 31.

次いで、図３（Ｃ）に示すように、エポキシ樹脂やポリイミド樹脂等の熱可塑性樹脂によるトランスファモールド成型を行って、モールド樹脂３５を形成する。具体的には、予備加熱した樹脂タブレットを金型３３に投入してプランジャ３６で加圧し、流動樹脂をキャビティ３３ａ内にトランスファした後、熱硬化させる。   Next, as shown in FIG. 3C, transfer molding is performed using a thermoplastic resin such as an epoxy resin or a polyimide resin to form a mold resin 35. Specifically, a preheated resin tablet is put into the mold 33 and pressurized by the plunger 36 to transfer the fluid resin into the cavity 33a, and then thermally cured.

次いで、図３（Ｄ）に示すように、金型３３を取り外し、その後、図３（Ｅ）に示すように、補助基板３２を取り外す。   Next, as shown in FIG. 3D, the mold 33 is removed, and then the auxiliary substrate 32 is removed as shown in FIG.

このように本実施形態によれば、セラミック基板３１が金型３３に直接接触しないように、セラミック基板３１の裏面にこのセラミック基板３１よりサイズの大きい補助基板３２が貼り付けられ、この補助基板３２を金型３３が挟んでいるため、このセラミック基板３１に損傷を与えることなく、基板全体を容易にかつ低コストで封止することができ、しかも信頼性の高い封止が可能となる。   As described above, according to the present embodiment, the auxiliary substrate 32 larger in size than the ceramic substrate 31 is attached to the back surface of the ceramic substrate 31 so that the ceramic substrate 31 does not directly contact the mold 33. Since the metal mold 33 is sandwiched, the entire substrate can be easily and inexpensively sealed without damaging the ceramic substrate 31, and highly reliable sealing is possible.

なお、非金属材料基板としては、セラミック基板の他に樹脂基板、ガラスエポキシ基板又はガラス基板が適用可能である。   In addition to the ceramic substrate, a resin substrate, a glass epoxy substrate, or a glass substrate can be used as the nonmetallic material substrate.

なお、本発明のモールド成型法としては、上述したトランスファモールド法以外にも例えばインジェクションモールド法等を用いても良いことは明らかである。   In addition, as a mold forming method of the present invention, it is obvious that, for example, an injection mold method may be used in addition to the transfer mold method described above.

以上述べた実施形態は全て本発明を例示的に示すものであって限定的に示すものではなく、本発明は他の種々の変形態様及び変更態様で実施することができる。従って本発明の範囲は特許請求の範囲及びその均等範囲によってのみ規定されるものである。   All the embodiments described above are illustrative of the present invention and are not intended to be limiting, and the present invention can be implemented in other various modifications and changes. Therefore, the scope of the present invention is defined only by the claims and their equivalents.

本発明の一実施形態として、トランスファモールド法を用いた封止工程の一例を概略的に示す断面図である。It is sectional drawing which shows roughly an example of the sealing process using the transfer mold method as one Embodiment of this invention. 図１の実施形態において、緩衝テープを貼り付けた状態のセラミック基板の平面図である。In the embodiment of FIG. 1, it is a top view of the ceramic substrate of the state which affixed the buffer tape. 本発明の他の実施形態として、トランスファモールド法を用いた封止工程の一例を概略的に示す断面図である。It is sectional drawing which shows roughly an example of the sealing process using the transfer mold method as other embodiment of this invention. 図３の実施形態において、補助基板を貼り付けた状態のセラミック基板の平面図である。FIG. 4 is a plan view of a ceramic substrate with an auxiliary substrate attached in the embodiment of FIG. 3.

符号の説明Explanation of symbols

１０、３０ 電子部品
１１、３１ セラミック基板
１２ 緩衝テープ
１３、３３ 金型
１３ａ、３３ａ キャビティ
１４ 被覆体
１５、３５ モールド樹脂
１６、３６ プランジャ
３２ 補助基板
10, 30 Electronic component 11, 31 Ceramic substrate 12 Buffer tape 13, 33 Mold 13a, 33a Cavity 14 Covering body 15, 35 Mold resin 16, 36 Plunger 32 Auxiliary substrate

Claims (8)

電子部品を搭載した非金属材料基板を、金型に直接接触しないように該金型のキャビティ内に設置し、樹脂によるモールド成型を行なうことを特徴とする電子部品の封止方法。   A method for sealing an electronic component, comprising: placing a non-metallic material substrate on which an electronic component is mounted in a cavity of the mold so as not to directly contact the mold, and performing molding with a resin. 前記非金属材料基板の外周部に緩衝部材を設け、該非金属材料基板を該緩衝部材を介して前記金型で挟むことにより前記キャビティ内に設置することを特徴とする請求項１に記載の方法。   The method according to claim 1, wherein a buffer member is provided on an outer peripheral portion of the nonmetallic material substrate, and the nonmetallic material substrate is placed in the cavity by being sandwiched by the mold through the buffer member. . 前記モールド成型の後、前記非金属材料基板の外周部及び前記緩衝部材を切り離すことを特徴とする請求項２に記載の方法。   The method according to claim 2, wherein after the molding, the outer peripheral portion of the non-metallic material substrate and the buffer member are separated. 前記緩衝部材が、樹脂材料からなることを特徴とする請求項２又は３に記載の方法。   The method according to claim 2, wherein the buffer member is made of a resin material. 前記非金属材料基板の前記電子部品搭載面とは反対側の面に、該非金属材料基板より大きなサイズの補助基板を固着し、該補助基板の外周部を前記金型で挟むことにより前記キャビティ内に設置することを特徴とする請求項１に記載の方法。   An auxiliary substrate having a size larger than that of the non-metallic material substrate is fixed to the surface of the non-metallic material substrate opposite to the electronic component mounting surface, and the outer peripheral portion of the auxiliary substrate is sandwiched between the molds. The method according to claim 1, wherein the method is installed in a computer. 前記モールド成型の後、前記補助基板を前記非金属材料基板から取り外すことを特徴とする請求項５に記載の方法。   The method according to claim 5, wherein the auxiliary substrate is removed from the non-metallic material substrate after the molding. 前記補助基板が、金属材料板又は樹脂材料板であることを特徴とする請求項５又は６に記載の方法。   The method according to claim 5 or 6, wherein the auxiliary substrate is a metal material plate or a resin material plate. 前記非金属材料基板が、樹脂基板、セラミック基板、ガラスエポキシ基板又はガラス基板であることを特徴とする請求項１から７のいずれか１項に記載の方法。
The method according to claim 1, wherein the non-metallic material substrate is a resin substrate, a ceramic substrate, a glass epoxy substrate, or a glass substrate.
JP2005027457A 2005-02-03 2005-02-03 Method for sealing electronic part Pending JP2006216750A (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148392A (en) * 1999-05-27 2001-05-29 Matsushita Electronics Industry Corp Electronic device, its manufacturing method, and its manufacturing equipment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148392A (en) * 1999-05-27 2001-05-29 Matsushita Electronics Industry Corp Electronic device, its manufacturing method, and its manufacturing equipment

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