JP2006204999A - Coating apparatus and method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a coating apparatus in which a shape of the tip of a liquid discharge nozzle for discharging liquid for film formation can be restrained from being changed owing to a rebound of the liquid for film formation. <P>SOLUTION: The coating apparatus is provided with: a wafer holding part 12 for holding a semiconductor wafer 1; a power source 14 for rotating the wafer holding part 12; the liquid discharge nozzle 30a for discharging the liquid for film formation onto the semiconductor wafer 1 held by the wafer holding part 12; and a nozzle wait part 20 where the liquid discharge nozzle 30a waits. The liquid discharge nozzle 30a discharges the dummy liquid for film formation when waiting in the nozzle wait part 20. The nozzle wait part 20 is provided with: a vessel 22 for receiving the dummy liquid for film formation discharged from the liquid discharge nozzle 30a; and an inclined member 24 which is arranged in the vessel 22 and below the liquid discharge nozzle 30a and has an inclined upper surface. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a coating apparatus for applying a film-forming liquid onto a semiconductor wafer and a method for manufacturing the semiconductor apparatus. In particular, the present invention relates to a coating apparatus and a method for manufacturing a semiconductor device that can suppress a change in shape of the tip of a liquid discharge nozzle caused by the rebound of the film forming liquid.

  FIG. 7 is a schematic view for explaining the structure of a conventional coating apparatus. The coating apparatus shown in this figure is an apparatus for applying SOG to the silicon wafer 101. The SOG is held in a container 140 provided with a lid 142. Nitrogen gas is fed into the container 140 through the pipe 144, and thereby SOG is pushed out of the container 140 through the pipe 132. The distal end of the pipe 132 is connected to the liquid discharge unit 130. The SOG supplied to the liquid discharge unit 130 is discharged onto the center portion of the silicon wafer 101 from the liquid discharge nozzle 130 a provided on the lower surface of the liquid discharge unit 130.

  The silicon wafer 101 is attracted to the spin chuck 112. The spin chuck 112 rotates using the motor 114 as a power source. For this reason, the SOG discharged to the center of the silicon wafer 101 spreads over the entire surface of the silicon wafer 101 due to centrifugal force.

Further, the liquid ejection unit 130 stands by on the container 122 of the standby unit 120 when SOG is not being ejected onto the silicon wafer 101. While waiting on the container 122, the liquid discharge unit 130 periodically discharges SOG from the liquid discharge nozzle 130a to the container 122 in order to prevent clogging (see, for example, Patent Document 1).
JP-A-6-120132 (FIG. 1)

  When a film-forming liquid such as SOG is discharged by a dummy, the film-forming liquid rebounds from the standby container and may adhere to the liquid discharge nozzle. When the film formation liquid adheres to the liquid discharge nozzle, the shape of the tip of the liquid discharge nozzle changes (for example, a portion indicated by reference numeral 130b in FIG. 7), and the discharge timing and discharge amount of the film formation liquid can be controlled with high accuracy. It becomes difficult.

  The present invention has been made in consideration of the above-described circumstances, and an object of the present invention is to suppress a change in the shape of the tip of a liquid discharge nozzle that discharges a film-forming liquid caused by the rebound of the film-forming liquid. An object of the present invention is to provide a coating apparatus and a method for manufacturing a semiconductor device.

In order to solve the above problems, a coating apparatus according to the present invention includes a wafer holding unit for holding a semiconductor wafer,
A power source for rotating the wafer holder;
A liquid discharge nozzle for discharging a film-forming liquid onto the semiconductor wafer held by the wafer holder;
A nozzle standby unit in which the liquid discharge nozzle is on standby, and the film-forming liquid is dummy-discharged from the liquid discharge nozzle;
Comprising
The nozzle standby unit is
A container for receiving the film-forming liquid that has been dummy-discharged from the liquid-discharge nozzle;
An inclined member disposed in the container and below the liquid discharge nozzle and having an inclined upper surface.

  According to this coating apparatus, the inclined member whose upper surface is inclined is disposed in the container for receiving the dummy-discharged film-forming liquid. Therefore, the film-forming liquid discharged by dummy is prevented from splashing upward, and as a result, the deposition liquid is prevented from adhering to the liquid discharge nozzle located above the container.

  The container may further include a discharge port formed on a side surface of the container and disposed at a position substantially in contact with the bottom surface of the container, and the inclined member may be disposed on the bottom surface of the container. A discharge port formed on a side surface of the container and spaced upward from the bottom surface of the container may further be provided, and the inclined member may be disposed above the discharge port.

Another coating apparatus according to the present invention includes a wafer holding unit for holding a semiconductor wafer,
A power source for rotating the wafer holder;
A liquid discharge nozzle for discharging a film-forming liquid onto the semiconductor wafer held by the wafer holder;
A nozzle standby unit in which the liquid discharge nozzle is on standby, and the film-forming liquid is dummy-discharged from the liquid discharge nozzle;
Comprising
The nozzle standby unit includes a container that has a bottom surface that is inclined and receives the film-forming liquid that is dummy-discharged from the liquid-discharge nozzle.

Another coating apparatus according to the present invention includes a wafer holding unit for holding a semiconductor wafer,
A power source for rotating the wafer holder;
A liquid discharge nozzle for discharging a film-forming liquid onto the semiconductor wafer held by the wafer holder;
A nozzle standby unit in which the liquid discharge nozzle is on standby, and the film-forming liquid is dummy-discharged from the liquid discharge nozzle;
Comprising
The nozzle standby unit is
A container for receiving the film-forming liquid that has been dummy-discharged from the liquid-discharge nozzle;
A rebound preventing member disposed in the container and spaced upward from the bottom surface of the container and having an opening at a portion located below the liquid discharge nozzle.

  According to this coating apparatus, the rebound preventing member is disposed in the container that receives the dummy-discharged film forming container. Since the bounce preventing member has an opening in a portion located below the liquid discharge nozzle, the dummy-discharging film forming liquid passes through the opening and falls to the bottom surface of the container. Part of the film-forming liquid that has fallen to the bottom surface rebounds, but since a splash-prevention member is provided between the bottom surface and the liquid discharge nozzle, it is possible to prevent the rebound film-forming liquid from adhering to the liquid discharge nozzle. Is done.

It is preferable that the upper surface of the rebound preventing member is inclined in a direction of falling from the peripheral portion toward the opening.
In each coating apparatus described above, the film forming liquid is, for example, SOG.

A method of manufacturing a semiconductor device according to the present invention includes a step of causing a liquid discharge nozzle that discharges a film forming liquid to stand by on a container, and a dummy discharge of the film forming liquid from the liquid discharge nozzle to the container;
The semiconductor wafer is moved by moving the liquid discharge nozzle above the semiconductor wafer placed on the wafer holding unit, rotating the wafer holding unit, and discharging the film forming liquid from the liquid discharge nozzle. Applying a film-forming liquid to
Comprising
An inclined member whose upper surface is inclined is disposed in the container so as to be positioned below the standby liquid discharge nozzle.

In another method of manufacturing a semiconductor device according to the present invention, a liquid discharge nozzle for discharging a film forming liquid is made to stand by on a container whose bottom surface is inclined, and the film forming liquid is supplied from the liquid discharge nozzle to the container. A process of discharging a dummy,
The semiconductor wafer is moved by moving the liquid discharge nozzle above the semiconductor wafer placed on the wafer holding unit, rotating the wafer holding unit, and discharging the film forming liquid from the liquid discharge nozzle. And a step of applying a film-forming liquid.

In another method of manufacturing a semiconductor device according to the present invention, a step of causing a liquid discharge nozzle that discharges a film forming liquid to stand by on a container and causing the liquid discharge nozzle to discharge the film forming liquid into the container by a dummy discharge. When,
The semiconductor wafer is moved by moving the liquid discharge nozzle above the semiconductor wafer placed on the wafer holding unit, rotating the wafer holding unit, and discharging the film forming liquid from the liquid discharge nozzle. Applying a film-forming liquid to
Comprising
In the container, an anti-bounce member having an opening in a portion located below the liquid discharge nozzle in standby is disposed so as to be spaced upward from the bottom surface of the container.

  According to these semiconductor device manufacturing methods, the shape change at the tip of the liquid discharge nozzle that discharges the film-forming liquid caused by the rebound of the film-forming liquid is suppressed. Can be applied.

BEST MODE FOR CARRYING OUT THE INVENTION

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a view for explaining the configuration of a coating apparatus according to the first embodiment of the present invention. This coating apparatus is an apparatus that applies SOG (Spin On Glass) to the silicon wafer 1 by spin coating. The silicon wafer 1 coated with SOG is heat-treated at 400 ° C., for example. Thereby, an SOG film is formed on the silicon wafer 1. The SOG film is used as an interlayer insulating film, for example.

  The silicon wafer 1 is attracted to the spin chuck 12. The spin chuck 12 is connected to a motor 14 via a shaft 12a, and rotates using the motor 14 as a power source. The spin chuck 12 is disposed in the cup 10 to prevent SOG from scattering.

  The SOG is held in a container 40 provided with a lid 42. The lid 42 penetrates the pipe 44 and the pipe 32. The pipe 44 is provided for feeding nitrogen gas into the container 40. When nitrogen gas is sent into the container 40, the SOG in the container 40 is pushed out through the pipe 32.

The tip of the pipe 32 is connected to the liquid discharge unit 30. The SOG extruded from the container 40 is supplied from the pipe 32 to the liquid discharge unit 30 and discharged onto the silicon wafer 1 from the liquid discharge nozzle 30 a provided on the lower surface of the liquid discharge unit 30.
The pipes 32 and 44 are provided with opening and closing valves 32a and 44a, respectively.

  The liquid discharge unit 30 stands by on the container 22 of the standby unit 20 when SOG is not being discharged onto the silicon wafer 1. While waiting on the container 22, the liquid ejection unit 30 performs dummy ejection of SOG into the container 22 periodically from the liquid ejection nozzle 30 a in order to prevent the liquid ejection nozzle 30 a from being clogged.

  The container 22 has a shape in which the bottom of the cylinder is closed. A discharge port 22 a is provided on the side surface of the container 22. The discharge port 22 a is disposed at a position substantially in contact with the bottom surface of the container 22. An inclined member 24 is provided on the bottom surface of the container 22.

  FIG. 2 is a perspective view of the inclined member 24. The inclined member 24 has a shape obtained by obliquely dividing a disk having a certain thickness into two equal parts so that the cut surface 24a passes through the outer peripheral edges of the upper surface and the bottom surface of the disk.

  As shown in FIG. 1, the inclined member 24 is disposed on the bottom surface of the container 22 so that the inclined cut surface 24 a becomes the upper surface and the thinnest portion faces the discharge port 22 a. For this reason, the dummy-discharged SOG rebounds obliquely by the cut surface 24a. Therefore, the SOG is prevented from bouncing toward the liquid discharge nozzle 30a. Further, since the inclined member 24 is very thin in the vicinity of the discharge port 22a, SOG is quickly discharged from the discharge port 22a. In addition, the inclination angle of the upper surface of the inclination member 24 should just be 5 degrees or more.

  As described above, according to the first embodiment of the present invention, since the inclined member 24 whose upper surface is inclined is provided on the bottom surface of the container 22 from which SOG is dummy-discharged, the dummy-discharged SOG is a liquid discharge nozzle. Rebounding to 30a can be suppressed. Therefore, the liquid discharge nozzle 30a is suppressed from being deformed due to the rebound of the SOG, and the SOG discharge timing and discharge amount can be controlled with high accuracy. For this reason, the SOG film can be formed on the silicon wafer 1 with high accuracy.

  Note that the above-described effects can be obtained by inclining the bottom surface of the container 22 instead of providing the inclined member 24.

FIG. 3 is a diagram for explaining the configuration of the coating apparatus according to the second embodiment. This embodiment has the same configuration as that of the first embodiment except for the configuration of the standby unit 20. Further, the silicon wafer 1 coated with SOG by the coating apparatus according to the present embodiment is heat-treated at, for example, 400 ° C. as in the first embodiment. Thereby, an SOG film is formed on the silicon wafer 1.
Hereinafter, the same configurations as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment, and description thereof is omitted.

  In the standby unit 20 of the present embodiment, the discharge port 22a of the container 22 is disposed away from the bottom surface of the container 22 for information. A portion of the container 22 positioned below the bottom of the discharge port 22a functions as a liquid reservoir 22b in which dummy discharged SOG is accumulated.

FIG. 4 is a perspective view of the container 22. The inclined member 24 is located above the discharge port 22a and suppresses the dummy-discharged SOG from bouncing back toward the liquid discharge nozzle 30a. A solvent supply unit 26 is provided on the side surface of the container 22. The solvent supply unit 26 is located above the inclined member 24, and supplies a solvent to the upper surface of the inclined member 24 in order to clean the SOG attached to the inner surface of the inclined member 24 and the container 22. In the present embodiment, the inclined member 24 has a slightly smaller planar shape than the bottom surface of the container 22 so that the SOG falls downward.
Also according to this embodiment, the same effect as that of the first embodiment can be obtained.

FIG. 5 is a diagram for explaining a configuration of a coating apparatus according to the third embodiment. This embodiment has the same configuration as that of the second embodiment except that a bounce prevention member 25 is disposed instead of the inclined member 24. Further, the silicon wafer 1 coated with SOG by the coating apparatus according to the present embodiment is heat-treated at, for example, 400 ° C. as in the first embodiment. Thereby, an SOG film is formed on the silicon wafer 1.
Hereinafter, the same configurations as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment, and description thereof is omitted.

  FIG. 6 is a perspective view of the rebound preventing member 25. The rebound preventing member 25 is formed in a circular plate having the same outer diameter as the inner diameter of the container 22, and a conical concave portion extending over the entire upper surface is formed. The shape is provided. The through hole 25a is located at a substantially central portion of the rebound preventing member 25 in the planar arrangement. And in the state where the liquid discharge part 30 is waiting, the liquid discharge nozzle 30a is located right above the through-hole 25a. In addition, as shown in FIG. 5, the through-hole 25a is smaller than the liquid discharge nozzle 30a in a planar shape.

  The SOG discharged dummy from the liquid discharge nozzle 30a falls through the through hole 25a into the liquid reservoir 22b of the container 22. A part of the fallen SOG rebounds, but since the rebound preventing member 25 is located above the liquid reservoir 22b, the rebound SOG is suppressed from adhering to the liquid discharge nozzle 30a. In particular, in this embodiment, since the through hole 25a of the rebound preventing member 25 is smaller than the liquid discharge nozzle 30a in the planar shape, the above-described effect is great.

Even when the dummy-discharged SOG hits the upper surface of the bounce prevention member 25, the upper surface of the bounce prevention member 25 is inclined, so that the SOG bounce is prevented from adhering to the liquid discharge nozzle 30a.
As described above, the present embodiment can provide the same effects as those of the first embodiment.

  Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in each of the embodiments described above, the liquid discharge nozzle 30 of the coating apparatus may discharge a resist instead of SOG.

The figure for demonstrating the structure of the coating device which concerns on 1st Embodiment. The perspective view of the inclination member 24. FIG. The figure for demonstrating the structure of the coating device which concerns on 2nd Embodiment. The perspective view of the container 22. FIG. The figure for demonstrating the structure of the coating device which concerns on 3rd Embodiment. The perspective view of the bounce prevention member 25. FIG. The figure for demonstrating the structure of the conventional coating device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101 ... Silicon wafer, 10 ... Cap, 12, 112 ... Spin chuck, 12a ... Rotary shaft, 14, 114 ... Motor, 20, 120 ... Standby part, 22, 122, 40, 140 ... Container, 22a ... Discharge port , 22b ... Liquid reservoir, 24 ... Inclined member, 25 ... Bounce prevention member, 25a ... Through hole, 26 ... Solvent supply part, 30, 130 ... Liquid discharge part, 30a, 130a ... Liquid discharge nozzle, 32, 44, 132, 144 ... Piping, 32a, 142a ... Open / close valve

Claims (10)

A wafer holding unit for holding a semiconductor wafer;
A power source for rotating the wafer holder;
A liquid discharge nozzle for discharging a film-forming liquid onto the semiconductor wafer held by the wafer holder;
A nozzle standby unit in which the liquid discharge nozzle is on standby, and the film-forming liquid is dummy-discharged from the liquid discharge nozzle;
Comprising
The nozzle standby unit is
A container for receiving the film-forming liquid that has been dummy-discharged from the liquid-discharge nozzle;
An inclined member disposed in the container and below the liquid discharge nozzle and having an upper surface inclined;
A coating apparatus comprising: Further comprising a discharge port formed on a side surface of the container and disposed at a position substantially in contact with the bottom surface of the container;
The coating apparatus according to claim 1, wherein the inclined member is disposed on a bottom surface of the container. Further comprising a discharge port formed on a side surface of the container and spaced upward from the bottom surface of the container;
The coating apparatus according to claim 1, wherein the inclined member is disposed above the discharge port. A wafer holding unit for holding a semiconductor wafer;
A power source for rotating the wafer holder;
A liquid discharge nozzle for discharging a film-forming liquid onto the semiconductor wafer held by the wafer holder;
A nozzle standby unit in which the liquid discharge nozzle is on standby, and the film-forming liquid is dummy-discharged from the liquid discharge nozzle;
Comprising
The nozzle standby unit is a coating apparatus that includes a container that has a bottom surface inclined and receives the film-forming liquid that has been dummy-discharged from the liquid-discharge nozzle. A wafer holding unit for holding a semiconductor wafer;
A power source for rotating the wafer holder;
A liquid discharge nozzle for discharging a film-forming liquid onto the semiconductor wafer held by the wafer holder;
A nozzle standby unit in which the liquid discharge nozzle is on standby, and the film-forming liquid is dummy-discharged from the liquid discharge nozzle;
Comprising
The nozzle standby unit is
A container for receiving the film-forming liquid that has been dummy-discharged from the liquid-discharge nozzle;
A rebound preventing member disposed in the container and spaced upward from the bottom surface of the container, and having an opening in a portion located below the liquid discharge nozzle;
A coating apparatus comprising:   The coating apparatus according to claim 5, wherein an upper surface of the bounce preventing member is inclined in a direction of dropping from a peripheral portion toward the opening.   The coating apparatus according to claim 1, wherein the film-forming liquid is SOG. A step of causing a liquid discharge nozzle for discharging a film forming liquid to stand by on the container, and a dummy discharge of the film forming liquid from the liquid discharge nozzle to the container; and
The semiconductor wafer is moved by moving the liquid discharge nozzle above the semiconductor wafer placed on the wafer holding unit, rotating the wafer holding unit, and discharging the film forming liquid from the liquid discharge nozzle. Applying a film-forming liquid to
Comprising
A manufacturing method of a semiconductor device, wherein an inclined member whose upper surface is inclined is disposed in the container so as to be positioned below the liquid discharge nozzle in standby. A step of waiting a liquid discharge nozzle for discharging a film forming liquid on a container having a bottom surface inclined, and a dummy discharge of the film forming liquid from the liquid discharge nozzle to the container;
The semiconductor wafer is moved by moving the liquid discharge nozzle above the semiconductor wafer placed on the wafer holding unit, rotating the wafer holding unit, and discharging the film forming liquid from the liquid discharge nozzle. Applying a film-forming liquid to
A method for manufacturing a semiconductor device comprising: A step of causing a liquid discharge nozzle for discharging a film forming liquid to stand by on the container, and a dummy discharge of the film forming liquid from the liquid discharge nozzle to the container;
The semiconductor wafer is moved by moving the liquid discharge nozzle above the semiconductor wafer placed on the wafer holding unit, rotating the wafer holding unit, and discharging the film forming liquid from the liquid discharge nozzle. Applying a film-forming liquid to
Comprising
A method of manufacturing a semiconductor device, wherein a bounce preventing member having an opening in a portion located below the liquid discharge nozzle in standby is disposed in the container so as to be spaced upward from the bottom surface of the container.

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