JP2006203635A - Power combiner, power amplifier, and high frequency communication apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power combiner and a power amplifier capable of processing signals of a plurality of frequency bands largely apart from each other and to provide a multi-band high frequency communication apparatus provided with the power amplifier so as to decrease the number of components. <P>SOLUTION: In the power combiner 106, a resonance circuit composed of a capacitor C101, and inductors L101, L102 is provided between a connection node P3 of high frequency lines T101, T102 and a connection node P4 of high frequency transmission lines T103, T104, thereby making the impedance values of the high frequency transmission lines T101 to T104 different depending on a plurality of the frequency bands. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a power combiner that can be used in a plurality of frequency bands, a power amplifier including the power combiner, and a high-frequency communication apparatus including the power amplifier.

  In recent years, high-frequency communication devices such as mobile phones and wireless LANs have been rapidly spreading. In these high-frequency communication devices, with the rapid increase in the number of users, there is a problem of tightness of frequency resources. For this reason, 1.5 GHz band and 2 GHz band are assigned as new frequency bands in mobile phones originally used only in the 800 MHz band, and 5 GHz band is assigned in wireless LANs originally used only in the 2.4 GHz band.

  For a high-frequency communication apparatus to which a plurality of frequency bands are assigned, such as a mobile phone or a wireless LAN, it is required to support the assigned frequency bands. That is, one mobile phone is required to be able to communicate in both 800 MHz band and 2 GHz band, and one wireless LAN is required to be able to communicate in both 2.4 GHz band and 5 GHz band. Yes.

  As described above, a multiband high-frequency communication device having a transmission system circuit structure as shown in FIG. 7 is configured as a communication device in a plurality of frequency bands. In the transmission system circuit of the multiband high frequency communication apparatus of FIG. 7, a plurality of transmission system circuits 408 and 409 are configured in parallel according to the number of frequency bands to be multibanded (for example, two). Then, in each of the transmission system circuits 408 and 409, the modulated wave signal sources 402 and 403 that generate signals modulated in the frequency bands fa and fb, and the signals generated by the modulated wave signal sources 402 and 403, respectively. Power amplifiers 404 and 405 that respectively amplify, and antennas 406 and 407 that radiate the signals amplified by the power amplifiers 404 and 405 into the air.

  That is, when communication is performed in the frequency band fa, the signal obtained by modulating the signal encoded in the modulated wave signal source 402 by the frequency band fa by the transmission system circuit 408 is amplified by the power amplifier 404, Transmit from antenna 406. When communication is performed in the frequency band fb, the signal obtained by modulating the signal encoded in the modulated wave signal source 403 in the frequency band fb by the transmission system circuit 409 is amplified by the power amplifier 405. Transmit from antenna 407.

  The power amplifiers 404 and 405 used in such a multi-band high-frequency communication device are used to generate a low-power electric signal of the order of several mW generated by the modulated wave signal sources 402 and 403, for example, when used in a mobile phone. This is a circuit component that amplifies a signal of high power close to the order and sends it to the antennas 406 and 407. In recent high-frequency communication devices, there is a strong demand for lower power consumption, that is, improved power efficiency, in power amplifiers in transmission circuits that occupy most of the power consumption.

  Furthermore, recently, as a signal modulation / demodulation method, a digital modulation / demodulation method using QPSK modulation with high frequency utilization efficiency has been adopted. In this digital modulation / demodulation method, information is conveyed by both the amplitude and phase of the signal, and thus the power amplifier is required to linearly amplify the input signal. For these reasons, power amplifiers used in high-frequency communication devices such as the power amplifiers 404 and 405 in FIG. 7 are required to have high efficiency and high linearity in amplification characteristics.

  As described above, power amplifiers using the outphasing method are provided as power amplifiers having high linearity in amplification characteristics and high efficiency. The outphasing method is an amplification method that performs linear amplification using nonlinear elements called LINC (LInear Amplification with Nonlinear Components) (see Non-Patent Document 1). In this outphasing method, first, an input signal is decomposed into two signals having different phase differences, and each of the two signals having different phase differences is amplified by a nonlinear amplifier. Then, an output signal obtained by linearly amplifying the original input signal can be obtained by again synthesizing the two signals having different phase differences.

  As a configuration of the power combiner used in the power amplifier using the Outphasing method, a configuration equivalent to a Wilkinson type power combiner as a typical power combiner as shown in FIG. 8 is used. The power combiner 206 shown in FIG. 8 having a Wilkinson type has input terminals 201 and 202 to which signals output from two nonlinear amplifiers 204 and 205 are input, respectively, and one end of each of the input terminals 201 and 202 is connected to one end. High frequency lines T201 and T202 to be connected, an output terminal 203 connected to the other end of each of the high frequency lines T201 and T202, and a resistance component R201 connected between the input terminals 201 and 202 (non-patent document) 2).

  The lengths of the high-frequency lines T201 and T202 constituting the power combiner 206 are designed so that they appear to be approximately ¼ wavelength at the frequency of the signal amplified by the amplifiers 204 and 205. That is, it has a simple structure in which two high-frequency lines T201 and T202 having approximately ¼ wavelength are connected in a V shape. The power combiner 206 having the configuration shown in FIG. 8 configured as described above is provided with two signals having different phases amplified by the amplifiers 204 and 205 in order to perform an operation based on the outphasing method. At this time, one signal amplified by the amplifier 204 is input from the input terminal 201, and the other signal amplified by the amplifier 205 is input from the input terminal 202. The high frequency power input from the input terminal 201 and the high frequency power input from the input terminal 202 are combined and output from the output terminal 203.

  The power amplifier including the power combiner 206 having such a configuration includes a signal distributor 200 that decomposes an input signal into two signals having different phases, and an amplifier that amplifies each of the two signals output from the signal distributor 200. 204, 205. In the power amplifier having such a configuration, in the signal distributor 200, first, an input signal is divided into two signals, and each signal is phase-shifted, whereby two signals having different phases are amplified by the amplifiers 204 and 205. Output to each. The two signals having different phases are amplified by the amplifiers 204 and 205 and then combined by the power combiner 206. By operating in this way, the power amplifier can be made highly efficient and the linearity in its amplification characteristic can be enhanced. However, in general, in a power amplifier using the Outphasing method, it is known that the efficiency and the linearity in amplification characteristics are in a trade-off relationship.

That is, when the configuration of the power combiner used in the power amplifier is the same as that of the Wilkinson type power combiner including the resistance component R201 as a loss factor, as shown in FIG. However, its efficiency is lowered. On the other hand, in order to increase the efficiency, as shown in FIG. 9, the power component 206 having the same configuration as that of the Wilkinson power combiner is omitted from the resistance component R201 that causes the loss. The Outphasing method using a power amplifier including the power combiner 206a excluding the resistance component R201 as shown in FIG. 9 is called the Chireix method. Compared with the power amplifier shown in FIG. Although it decreases, the power efficiency can be increased (see Patent Document 1 and Non-Patent Document 3).
Japanese Patent Publication No. 2002-510927 X.Zhang et al, "Design of Linear RF Outphasing Power Amplifiers", Arctech House, 2003 The Institute of Electronics, Information and Communication Engineers "Monolithic Microwave Integrated Circuit (MMIC)" First Edition, pages 55-56 J. Grundlingh et al, "A High Efficiency Chireix Out-phasing Power Amplifier for 5GHz WLAN Applications", 2004 IEEE MTT-S Digest, pp.1535-1538

  However, in the case of the power amplifier configured as shown in FIG. 8 or FIG. 9, it is possible to achieve high efficiency and good linearity in amplification characteristics as described above, but since the use frequency band is narrow, It cannot be operated for multiband frequency bands. That is, in the power combiners 206 and 206a included in the power amplifier having the configuration as shown in FIG. 8 or FIG. 9, the lengths of the high-frequency lines T201 and T202 are approximately ¼ wavelength with respect to the frequency assumed in advance. Set to Therefore, the power amplifier including the power combiners 206 and 206a operates in a good state only in a narrow band including a frequency assumed in advance.

  Further, as shown in FIG. 4 of Non-Patent Document 3, instead of the high-frequency lines T201 and T202, a circuit equivalent to the circuit composed of the three inductances L501 to L503 shown in FIG. , It can be widened. However, the degree of widening the bandwidth is only limited, and a plurality of frequency bands (e.g., 2.4 GHz) that are widely separated as required by a multiband high-frequency communication device having a transmission system circuit structure as shown in FIG. And 5GHz) can not be used as a usable frequency band. Therefore, in the multiband high-frequency communication device, as described above, a plurality of transmission circuits corresponding to the number of frequency bands to be multibanded are required, which increases the number of components, and reduces the cost, size, and weight. To increase.

  In view of such a problem, the present invention provides a power combiner and a power amplifier that can process a plurality of frequency bands that are widely separated, and a multi-unit that has a reduced number of parts by including this power amplifier. An object is to provide a band high-frequency communication device.

  In order to achieve the above object, a power combiner according to the present invention includes a first input terminal to which a first signal that is a high-frequency signal is input, a second input terminal to which a second signal that is a high-frequency signal is input, An output terminal that outputs a signal obtained by combining the first signal and the second signal; and a first high-frequency line having one end connected to the first input terminal, A second high-frequency line to which the other end and one end of the first high-frequency line are connected; a third high-frequency line to which the second input terminal is connected to one end; and a second high-frequency line to which the other end and one end are connected. 4 high-frequency lines, and a resonance circuit having one end connected to the connection part of the first and second high-frequency lines and the other end connected to the connection part of the third and fourth high-frequency lines, When the frequency of the first and second signals is the first frequency, Impedance with increases, characterized in that the impedance of the resonant circuit when said first and second frequency higher than the frequency of the first frequency of the second signal is reduced.

  In such a power combiner, the resonant circuit includes a first inductance component connected in series between the connection portion of the first and second high-frequency lines and the connection portion of the third and fourth high-frequency lines, and A capacitance component and a second inductance component connected in parallel with a series resonance circuit including the first inductance component and the capacitance component, and resonance by a parallel resonance circuit including the first and second inductance components and the capacitance component. It is assumed that the frequency is substantially equal to the first frequency, and the resonance frequency by the series resonance circuit using the first inductance component and the capacitance component is substantially equal to the second frequency.

  At this time, the length of each of the first and third high-frequency lines is set to a length substantially equal to ¼ of the wavelength with respect to the second frequency, and the total length of the first and second high-frequency lines, Each of the total lengths of the third and fourth high-frequency lines is assumed to have a length equal to approximately ¼ of the wavelength with respect to the first frequency.

  In these power combiners, the first to fourth high-frequency lines may be replaced with a circuit in which an integer number of series-connected inductance components and an integer number of shunt-connected inductance components are alternately connected, An integer number of series-connected inductance components and an integer number of shunt-connected capacitance components may be replaced by a circuit that is alternately connected.

  The power amplifier according to the present invention also includes a signal distributor for vector-decomposing an input signal into two signals having the same amplitude and different phases, and a first one for amplifying one of the two signals distributed by the signal distributor. One amplifier, a second amplifier that amplifies the other of the two signals distributed by the signal distributor, and any one of the power combiners described above, and is amplified by the first and second amplifiers The received signals are input to the power combiner as the first and second signals, respectively.

  That is, the power amplifier of the present invention employs an outphasing method in which the two signals distributed by the signal distributor have substantially equal amplitudes and different phases.

  The high-frequency communication apparatus of the present invention is a high-frequency communication apparatus that processes signals in two frequency bands of the first and second frequencies. The high-frequency communication apparatus includes any one of the power amplifiers described above, and has the first and second frequencies. Each signal is amplified in common by the power amplifier.

  According to the present invention, by providing a resonance circuit between the connection portion of the first and second high-frequency lines and the connection portion of the third and fourth high-frequency lines, the first frequency signal is obtained with respect to signals having a plurality of different frequencies. Since the impedance of the fourth high-frequency line can be switched, a multiband power combiner that can be driven at a plurality of frequencies can be configured. Also, in this power combiner, by configuring a resonance circuit with a series resonance circuit and a parallel resonance circuit having different resonance frequencies, the impedance by the first to fourth high-frequency lines is automatically set according to the signal of the frequency to be processed. Can be switched. Further, in this power combiner, by providing a resistance component between the first and second input terminals, the same circuit structure as that of the Wilkinson type power combiner is obtained, and the good isolation characteristic of the Wilkinson type power combiner is provided. Can be given.

  In addition, according to the present invention, a multi-band power amplifier that can be driven at a plurality of frequencies can be configured by using the power amplifier including the above-described power combiner. Furthermore, since a high-frequency communication device equipped with this power amplifier can amplify signals of a plurality of frequencies with a single power amplifier, when configured as a multiband high-frequency communication device, its internal components The number can be reduced.

  Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram showing an internal configuration of a multiband high-frequency communication device according to this embodiment.

  The multiband high-frequency communication device of FIG. 1 amplifies a modulated wave signal source 301 that generates a signal modulated in one of frequency bands fa and fb (fa <fb), and a signal generated by the modulated wave signal source 301 A power amplifier 302 using the outphasing method, an antenna 303 for transmitting the signal amplified by the power amplifier 302, a control circuit 304 for controlling the modulation wave signal source 301 and switching the modulation frequency in the modulation wave signal source 301, Is provided.

  That is, when communication is performed in the frequency band fa, the encoded signal is modulated at the frequency fa in the modulated wave signal source 301, amplified by the power amplifier 302, and then transmitted from the antenna 303. Similarly, when communicating in the frequency band fb, similarly, the modulated wave signal source 301 modulates the encoded signal at the frequency fb, amplifies it by the power amplifier 302, and transmits it from the antenna 303. .

  The configuration of the power amplifier 302 in such a multiband high frequency communication apparatus is shown in FIG. A power amplifier 302 shown in FIG. 2 includes an input terminal 101 to which a signal output from the modulated wave signal source 301 is input, and a signal distributor 102 that decomposes the signal input from the input terminal into two signals having different phases. The amplifiers 104 and 105 that amplify the two signals having different phases obtained by the signal distributor 102, the power combiner 106 that combines the two signals amplified by the amplifiers 104 and 105, and the power combiner 106, respectively. And an output terminal 103 connected to the antenna 303. The amplifiers 104 and 105 are amplifiers having the same design, and a signal having an equal amplitude is input from the signal distributor 102.

  When the power amplifier 302 is configured in this way, the power combiner 106 further includes a high-frequency line T101, T103 connected to the output terminal of each of the amplifiers 104, 105 and one end of the high-frequency line T101, T103. High-frequency lines T102 and T104 to which one ends are connected, a resistor R101 connected between the output terminals of the amplifiers 104 and 105, a connection node P3 of the high-frequency lines T101 and T102, and a connection node P4 of the high-frequency lines T103 and T104 And a resonance circuit 107 connected between the two. A connection node between the output terminal of the amplifier 104 and the high-frequency line T101 is P1, and a connection node between the output terminal of the amplifier 105 and the high-frequency line T103 is P2. The high-frequency lines T101 to T104 can be configured, for example, by installing a microstrip line on a glass epoxy substrate.

  The resonance circuit 107 installed in the power combiner 106 includes an inductance L101 having one end connected to the connection node P3, a capacitance C101 connected between the other end of the inductance L101 and the connection node P4, and a connection node. And an inductance L102 connected between P3 and P4. That is, in the resonance circuit 107, the inductance L101 and the capacitance C101 are directly connected to form a series resonance circuit, and the series resonance circuit including the inductance L101 and the capacitance C101 and the inductance L102 are connected in parallel to achieve parallel resonance. A circuit is constructed. The inductances L101 and L102 and the capacitance C101 are each configured by using, for example, a multilayer ceramic chip component.

  Further, in the resonance circuit 107 configured as described above, the resonance frequency of the parallel resonance circuit including the inductances L101 and L102 and the capacitance C101 is set to fa, and the resonance frequency of the series resonance circuit including the inductance L101 and the capacitance C101 is set to fb. To do. Therefore, when a signal modulated at the frequency fa is input, the impedance of the resonance circuit 107 becomes maximum due to the parallel resonance of the parallel resonance circuit by the inductances L101 and L102 and the capacitance C101, and the equivalent circuit of FIG. Thus, the nodes P3 and P4 are opened. When a signal modulated at the frequency fb is input, the impedance of the resonance circuit 107 is minimized by the series resonance of the series resonance circuit due to the inductance L101 and the capacitance C101, as shown in the equivalent circuit of FIG. The nodes P3 and P4 are short-circuited.

  When the wavelengths of the signals of the frequencies fa and fb are λa and λb, respectively, the lengths of the high-frequency lines T101 and T103 are set to about λb / 4, and the lengths of the high-frequency lines T102 and T104 are set to about ( λa−λb) / 4. That is, the total length of the high-frequency lines T101 and T102 and the total length of the high-frequency lines T103 and T104 are approximately λa / 4, and the length of each of the high-frequency lines T101 and T103 is approximately λb / 4. .

  The power combiner 106 configured in this manner receives signals of the frequency fa from the amplifiers 104 and 105 when a signal modulated at the frequency fa is supplied from the modulated wave signal source 301 to the power amplifier 302. The resonance circuit 107 opens the nodes P3 and P4. Therefore, as in the equivalent circuit of FIG. 3A, the high frequency lines T101 and T102 are connected in series, the high frequency lines T103 and T104 are connected in series, and the high frequency lines T102 and T104 are connected at the output terminal 103. It becomes the state. That is, the power combiner 106 is equivalent to a state in which two high-frequency lines having a length of approximately λa / 4 are connected at the output terminal 103, and operates as a power combiner for combining signals of the frequency fa.

  When a signal modulated at the frequency fb is supplied from the modulated wave signal source 301 to the power amplifier 302, the signal at the frequency fb is input from the amplifiers 104 and 105 to the power combiner 106. A short circuit occurs between P3 and P4. Therefore, as shown in the equivalent circuit of FIG. 3B, the other ends of the high-frequency lines T101 and T103 are connected. The high frequency lines T102 and T104 are connected in parallel between the connection node P5 of the high frequency lines T101 and T103 and the output terminal 103. The portion composed of the two high-frequency lines T102 and T104 in which both ends are short-circuited has only an effect of giving a slight phase rotation or impedance mismatch to the signal of the frequency fb, so that it can be almost ignored. Become. That is, the power combiner 106 is equivalent to a state in which two high-frequency lines having a length of approximately λb / 4 are connected at the output terminal 103, and operates as a power combiner for combining signals of the frequency fb.

  As described above, the power combiner 106 can function with respect to a signal modulated at either the frequency fa or fb. The power amplifier 302 including the power combiner 106 can perform an amplification operation based on the Outphasing method on the signals modulated at the frequencies fa and fb. That is, the power amplifier 302 has high power efficiency with respect to each of the frequencies fa and fb, and has good linearity in its amplification characteristics.

  The power amplifier 302 having such characteristics, when a signal modulated at one of the frequencies fa and fb is generated by the modulated wave signal source 301 and applied to the input terminal 101, first, in the signal distributor 102 Then, by decomposing the given signal into two signals and giving a phase difference, two signals having a phase difference are generated. Then, when these two signals having different phases are respectively supplied to the amplifiers 104 and 105 to be amplified, they are supplied to the power combiner 106, and the power combiner 106 performs the above-described operation, thereby the amplifiers 104 and 105. The two signals amplified in step 1 are synthesized. When these two signals are combined into one signal, it is output to the antenna 303 via the output terminal 103.

  Therefore, in the power amplifier 302, the signal modulated at either the frequency fa or fb by the modulated wave signal source 301 is amplified based on the outphasing method and output from the antenna 303 from the output terminal 103. Then, the signal amplified by the power amplifier 302 is radiated from the antenna 303, whereby a signal modulated in one of the frequency bands fa and fb (fa <fb) is transmitted.

  In the multiband high-frequency communication apparatus configured as described above, a multiband antenna that can be used in both frequency bands fa and fb is used as the antenna 303. For the modulated wave signal source 302, for example, by using a direct conversion architecture with few filters, a multiband signal source capable of performing a modulation operation at both frequencies fa and fb is configured. Can do.

  Further, in the present embodiment, the power combiner 106 in the power amplifier 302 is provided with the resistor R101 connected between the nodes P1 and P2, but when the Chireix method is used as the Outphasing method, As shown in FIG. 4, a power combiner 106 a configured by removing the resistor R <b> 101 from the power combiner 106 in FIG. 2 may be provided in the power amplifier 302.

  The high frequency lines T101 to T104 of the power combiners 106 and 106a in the power amplifier 302 may be replaced with lumped constant circuits. That is, when the signal is composed of the high frequency lines T101 to T104 of the power combiners 106 and 106a for a signal in a frequency band having a large wavelength such as a quasi-microwave band, the length of the high frequency lines T101 to T104 is several cm to It becomes several tens of centimeters. On the other hand, the power combiners 106 and 106a and the power amplifier 302 can be reduced in size by replacing the high-frequency lines T101 to T104 with lumped constant circuits.

  At this time, a lumped constant circuit installed in place of each of the high-frequency lines T101 to T104 is, for example, as shown in FIG. 5, three lumped constant inductances L201 to L203 are connected in a shunt connection / series connection / shunt connection. A lumped constant circuit may be used. In other words, the lumped constant inductances L201 and L203 having one end grounded and the lumped constant inductance L202 connected between the other ends of the lumped constants L201 and L203 may be used. When this π-type lumped constant circuit is installed in place of each of the high-frequency lines T101 to T104, in order to increase the bandwidth, the lumped constant inductance forming the lumped constant circuit and the lumped constant inductance forming the series connection are used. The number of constant inductances may be increased to increase the number of stages.

  Further, a lumped constant circuit installed in place of each of the high-frequency lines T101 to T104 is, for example, an integer number of shunt-connected lumped constant capacitances C6-1 to C6-n and an integer number of series connections. Alternatively, the lumped constant inductances L6-1 to L6- (n-1) may be alternately connected in multiple stages. That is, the lumped constant inductances L6-1 to L6- (n-1) are connected in series and the other end of the lumped constant capacitance C6-k (k is an integer of 1 ≦ k ≦ n) with one end grounded. Alternatively, the connection node of the lumped constant inductances L6- (k-1) and L6-k may be connected. Note that each of the lumped constant capacitances C6-1 to C6-n and the lumped constant inductances L6-1 to L6- (n-1) may be constituted by, for example, multilayer ceramic chip parts.

  Further, in the multiband high-frequency communication device of the present embodiment, if the signal output from the power amplifier is an analog signal, the modulation may be a digital signal from the signal source to the power amplifier. It does not matter. When a digital signal is input to the power amplifier, the signal distributor in the power amplifier distributes one signal into two signals (vector decomposition). This signal distribution processing is virtually performed as arithmetic processing in the digital circuit. To be done.

  The power combiner, the power amplifier, and the high-frequency communication device according to the present invention can be used in a multiband communication system that uses a plurality of frequency bands. For example, the 800 MHz band, the 1.5 GHz band, and the 2 GHz band are used. It can be used in a mobile phone or a wireless LAN using the 2.4 GHz band and the 5 GHz band.

These are block diagrams which show the internal structure of the multiband high frequency communication apparatus in embodiment of this invention. FIG. 2 is a schematic diagram showing an internal configuration of a power amplifier provided in the multiband high-frequency communication device of FIG. 1. FIG. 3 is an equivalent circuit diagram based on an input signal of a power combining circuit in the power amplifier of FIG. 2. FIG. 5 is a schematic diagram showing another configuration of a power amplifier provided in the multiband high-frequency communication device of FIG. 1. These are circuit diagrams which show the example of 1 structure of the lumped constant circuit used for the electric power synthetic | combination circuit in the power amplifier with which the multiband high frequency communication apparatus of FIG. 1 is equipped. These are circuit diagrams which show another example of a structure of the lumped constant circuit used for the electric power synthetic | combination circuit in the power amplifier with which the multiband high frequency communication apparatus of FIG. 1 is equipped. These are block diagrams which show the internal structure of the conventional multiband high frequency communication apparatus. FIG. 8 is a schematic diagram showing an internal configuration of a power amplifier provided in the multiband high-frequency communication device of FIG. 7. FIG. 8 is a schematic diagram showing another configuration of a power amplifier provided in the multiband high-frequency communication device of FIG. 7. These are circuit diagrams which show the example of 1 structure of the lumped constant circuit used for the electric power synthetic | combination circuit in the power amplifier with which the multiband high frequency communication apparatus of FIG. 7 is equipped.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Input terminal 102 Signal distributor 103 Output terminal 104,105 Amplifier 106 Power combiner 107 Resonant circuit T101-T104 High frequency line R101 Resistance L101, L102 Inductance C101 Capacitance 301 Modulating wave signal source 302 Power amplifier 303 Antenna 304 Control circuit

Claims (8)

A first input terminal to which a first signal that is a high frequency signal is input, a second input terminal to which a second signal that is a high frequency signal is input, and the first signal and the second signal are synthesized. A power combiner comprising: an output terminal that outputs the output signal;
A first high-frequency line connected at one end to the first input terminal;
A second high frequency line to which the other end and one end of the first high frequency line are connected;
A third high-frequency line connected at one end to the second input terminal;
A fourth high-frequency line to which the other end and one end of the third high-frequency line are connected;
A resonance circuit having one end connected to the connection part of the first and second high-frequency lines and the other end connected to the connection part of the third and fourth high-frequency lines;
With
The impedance of the resonance circuit increases when the frequency of the first and second signals is the first frequency, and the frequency when the frequency of the first and second signals is a second frequency higher than the first frequency. A power combiner characterized in that the impedance of the resonant circuit is reduced. The resonant circuit is
A first inductance component and a capacitance component connected in series between the connection portion of the first and second high-frequency lines and the connection portion of the third and fourth high-frequency lines;
A second inductance component connected in parallel with the series resonant circuit by the first inductance component and the capacitance component;
With
The resonance frequency by the parallel resonance circuit by the first and second inductance components and the capacitance component is substantially equal to the first frequency,
2. The power combiner according to claim 1, wherein a resonance frequency of a series resonance circuit including the first inductance component and the capacitance component is substantially equal to the second frequency. The length of each of the first and third high-frequency lines is a length equal to approximately ¼ of the wavelength with respect to the second frequency,
The total length of the first and second high-frequency lines and the total length of the third and fourth high-frequency lines are each set to a length equal to approximately ¼ of the wavelength with respect to the first frequency. The power combiner according to claim 1 or 2.   4. The first to fourth high-frequency lines are each replaced by a circuit in which an integer number of series-connected inductance components and an integer number of shunt-connected inductance components are alternately connected. The power combiner according to any one of the above.   The first to fourth high-frequency lines are each replaced by a circuit in which an integer number of series-connected inductance components and an integer number of shunt-connected capacitance components are alternately connected. The power combiner according to any one of the above.   The power combiner according to claim 1, further comprising a resistance component connected between the first and second input terminals. A signal distributor for vector-decomposing the input signal into two signals having the same amplitude and different phases;
A first amplifier for amplifying one of the two signals distributed by the signal distributor;
A second amplifier for amplifying the other of the two signals distributed by the signal distributor;
The power combiner according to any one of claims 1 to 6,
With
The power amplifier, wherein the signals amplified by the first and second amplifiers are input to the power combiner as the first and second signals, respectively. In a high-frequency communication device that processes signals in two frequency bands of the first and second frequencies,
A high-frequency communication apparatus comprising the power amplifier according to claim 7, wherein each of the first and second frequency signals is amplified in common by the power amplifier.

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