JP2006202894A - Light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein an optional directional characteristic of a light is obtained at a low cost. <P>SOLUTION: The light emitting device is provided with: a supporting body having positive and negative lead electrodes; a light emitting element to be mounted to the supporting body; and a translucent cover to cover the light emitting element. The light emitting element is formed by covering a semiconductor light emitting chip with a protection film, and it is arranged in a hollow section comprised of the translucent cover and the supporting body. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a light source provided with a semiconductor light emitting element chip, and more particularly to a semiconductor light emitting device that can be mounted as a light source of a lighting fixture.

  2. Description of the Related Art A semiconductor light emitting device having a semiconductor light emitting element chip mounted thereon has been proposed in which the semiconductor light emitting element chip is covered with a resin in order to protect the semiconductor light emitting element chip from the external environment. For example, in a light emitting diode disclosed as a conventional example in Patent Document 1, an LED chip is mounted on one of a pair of positive and negative lead electrodes, and the electrode of the LED chip is connected to the other lead electrode via a conductive wire. Electrically connected. Furthermore, the LED chip and the conductive wire are covered with a translucent resin. Such a light emitting diode repeats light emission and extinction, whereby the translucent resin expands and contracts due to heat generation of the LED chip, and the LED chip and the conductive wire may peel off. In addition, there is a problem in that the light emitting efficiency is lowered and the life of the light emitting diode is shortened due to deterioration of the translucent resin such as yellowing and cracking.

  In order to solve such problems, Japanese Patent Application Laid-Open No. 8-153896 proposes a semiconductor device in which an inert gas is sealed in a hollow portion that houses a semiconductor element. That is, the semiconductor device disclosed in Patent Document 1 is encapsulated in an LED chip, a lead electrode for supplying current to the LED chip, a sealing part for housing the LED chip, and the sealing part. And inert gas. More specifically, the lead electrode includes an inverted L-shaped first lead electrode to which the LED chip is bonded and an I-shaped second lead electrode, and the upper end portion of the lead electrode is a hollow portion. Exposed. Further, an LED chip is bonded to the upper end portion of the first lead electrode, and the electrode of the LED chip and the upper end portion of the second lead electrode are connected by a conductive wire.

In addition, the sealing portion includes a cap portion that emits light emitted from the LED chip to the outside, and a support that holds the first lead electrode and the second lead electrode and fixes the cap portion. And the sealing part forms the hollow part sealed with the cap part and the support body. The cap part is formed in a dome shape having a cavity on the LED chip side, and is made of a light-transmitting resin having good light transmission. Note that both the cap portion and the support are made of a resin material.
JP-A-8-153896

However, the conventional semiconductor light emitting device having a hollow structure as described above has a problem that it is expensive because it requires a sealed structure.
In addition, because of the hermetic sealing structure, it may be difficult to obtain desired light distribution characteristics.
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor device which can obtain a desired light directivity characteristic at low cost, particularly in a semiconductor device on which an optical semiconductor element is mounted.

In order to achieve the above object, a light-emitting device according to the present invention includes a support having a positive lead electrode and a negative lead electrode, a light-emitting element mounted on the support, and a transparent covering the light-emitting element. A light emitting device having a light cover,
The light emitting element is characterized in that a semiconductor light emitting element chip is covered with a protective film, and the light emitting element is disposed in a hollow portion constituted by the light transmitting cover and the support.

In the light emitting device according to the present invention, when the light emitting device is viewed from a direction perpendicular to the side surface of the light emitting element, the side surface of the light emitting device is in a position where the side surface can be visually recognized through the light transmitting cover. Can be arranged.
Thus, a light emitting device capable of light distribution using light emitted from the side surface direction of the light emitting element can be configured.

  In the light emitting device according to the present invention, the support has a recess and a mounting base provided so as to protrude from the bottom surface of the recess, and the light emitting element is mounted on the mounting base. Good.

  In the light emitting device according to the present invention, the first member may be combined with the central portion of the second member. Here, the first member has the mounting base, and the second member constitutes a side wall portion of the support body and holds the lead electrode.

  In the light emitting device according to the present invention, it is preferable that the first member has a higher thermal conductivity than the second member.

In the light emitting device according to the present invention, the outer shape of the translucent cover may be hemispherical.
In this case, the inner wall surface of the translucent cover may be hemispherical, and the light from the semiconductor light emitting element chip is substantially parallel to the mounting surface of the semiconductor light emitting element chip. A reflective surface for reflection may be formed. The reflecting surface is preferably conical.

  According to the light emitting device according to the present invention configured as described above, a semiconductor device can be provided that is inexpensive and can obtain desired light directivity characteristics in a semiconductor device on which an optical semiconductor element is mounted.

Embodiments according to the present invention will be described below with reference to the drawings.
However, the form shown below exemplifies a semiconductor device for embodying the technical idea of the present invention, and the present invention is not limited to the following embodiment.

Embodiment 1 FIG.
In the light emitting device of the first embodiment, the light emitting element 10 is mounted on the support 110 having the positive and negative lead electrodes 113 via the mount 1, and the translucent cover 120 is provided so as to cover the light emitting element 10. It is comprised by attaching (FIG. 1, FIG. 2, etc.).
Here, in particular, in the light emitting device of the first embodiment, the light emitting element 10 includes the semiconductor light emitting element chip 2 made of a semiconductor bare chip covered with the protective film 3, and the translucent cover 120 is not hermetically sealed. It is characterized by being arranged in a hollow part constituted by the support 110. As described above, the light-emitting device of Embodiment 1 has an extremely inexpensive structure as compared with the hermetic sealing structure.

  In particular, in the first embodiment, the protective coating 3 is formed on the upper surface and side surfaces of the semiconductor light emitting element chip 2 and the mounting surface (the surface on which the semiconductor light emitting element chip 2 is mounted, for example, the upper surface of the mount 1 in the following specific examples). ) So that high reliability can be obtained without hermetically sealing the hollow portion.

  Moreover, in this Embodiment 1, the fluorescent substance 6 is mixed in the protective film 3, and, thereby, the desired luminescent color is obtained. The fluorescent material 6 is preferably mixed almost uniformly in the protective film 3. Moreover, a pigment, a diffusing agent, or the like can be mixed in the protective coating 3 according to a desired application.

  Furthermore, in the light emitting device of the first embodiment, the support 110 has a recess 110r and a mounting base 111a provided so as to protrude from the bottom surface of the recess 110r, and the mount 1 is mounted on the mounting base 111a. The light emitting element 10 is mounted via Thus, in the light-emitting device of Embodiment 1, the light-emitting element 10 has a light-transmitting side surface of the light-emitting element 10 when the light-emitting device is viewed from the lateral direction (direction orthogonal to the side surface of the light-emitting element 10). The light emitted from the side surface of the light emitting element 10 can be effectively used by being arranged at a position where it can be visually recognized through the cover 120.

Hereinafter, the configuration of the light-emitting device of Embodiment 1 will be described more specifically.
In the following specific example, the mount-integrated light-emitting element 101 is manufactured, and the mount-integrated light-emitting element 101 is disposed in a hollow portion constituted by the translucent cover 120 and the support 110. In this specific example, the mount-integrated light-emitting element 101 has the semiconductor light-emitting element chip 2 mounted on the mount 1, and the upper surface and side surfaces of the semiconductor light-emitting element chip 2 and a part of the upper surface of the mount 1 are covered with the protective film 3. This configuration ensures high reliability, and enables the arrangement without being hermetically sealed in the hollow portion constituted by the translucent cover 120 and the support 110. Yes.

<Mount-integrated light emitting device 101>
5A is a plan view after the semiconductor light emitting element chip is flip-chip mounted on the mount 1, and FIG. 5B is a cross-sectional view taken along the line AA ′ of FIG. 5A.
In the first embodiment, the semiconductor light emitting element chip 2 is placed on the upper surface of the mount 1, and the upper surface and side surfaces of the semiconductor light emitting element chip 2 and a part of the upper surface of the mount 1 are covered with the protective film 3. An electrode 4 is formed on the mount 1 so as to face the electrode pattern of the semiconductor light emitting element chip 2. The semiconductor light emitting element chip 2 is flip-chip (face-down) mounted on the upper surface of the mount 1. The positive and negative electrodes of the semiconductor light emitting element chip 2 are electrically connected to the electrodes 4 of the mount 1 facing each other through the bonding member 5. As the connection method, for example, a method can be used in which a solder bump is provided on the electrode 4 side, and the semiconductor light emitting element chip 2 is placed on the solder bump and fixed while applying ultrasonic vibration. As the joining member, for example, Au, eutectic material (Au—Sn, Ag—Sn), solder (Pb—Sn), lead-free solder, or the like can be used.

  The electrode 4 is embedded in the mount except that the connecting portion with the semiconductor light emitting element chip 2 and the wire bonding pad portion for connecting to the positive and negative lead electrodes of the support are exposed on the mounting surface of the mount. Yes. An insulating underfill 2 u is inserted in the gap between the semiconductor light emitting element chip 2 and the mount 1 to prevent a short circuit. Further, the protective film 3 is mixed with a fluorescent material 6 that emits light having a wavelength different from that of the light absorbed and absorbed from the semiconductor light emitting element chip 2. The bonding member 5 includes solder, gold bumps ultrasonically bonded between the conductive pattern and the pad electrode, conductive paste such as gold, silver, palladium, rhodium, carbon paste, ITO paste, anisotropic A conductive paste or the like can be used. The size of the semiconductor light emitting element chip 2 to be used is not particularly limited, but a 1 mm square, 0.5 mm square, 2 mm square, 2 mm × 1 mm, or the like can be used.

As the mount 1, a glass epoxy laminated substrate, a liquid crystal polymer substrate, a polyimide resin substrate, a ceramic substrate, or the like can be used.
Further, as a material of the mount 1, SiC, GaAs, BN, C (diamond), or the like can be used. The material of the mount 1 is preferably a material having a thermal expansion coefficient substantially equal to that of the semiconductor light emitting element chip. For example, when a nitride semiconductor light emitting element chip is used, aluminum nitride (AlN) is preferable. As described above, by using a material having substantially the same thermal expansion coefficient as that of the semiconductor light emitting element chip, it is possible to reduce the influence of thermal stress generated between the support substrate and the semiconductor element.

Furthermore, Si (silicon) can also be used as the material of the mount 1, and a protective element for protecting the semiconductor light emitting element chip from electrostatic breakdown may be formed on this Si substrate. For example, a Si diode element can be configured by forming a p-type semiconductor region by selectively implanting impurity ions into an n-type silicon substrate and setting a reverse breakdown voltage to a predetermined voltage.
For the conductive pattern, a good electrical conductor such as copper, phosphor bronze, iron or nickel can be used. Moreover, noble metal plating, such as silver, gold | metal | money, palladium, rhodium, can also be given to the surface of a conductive pattern.

In this specific example, the protective coating 3 covers at least part of the upper surface and side surfaces of the semiconductor light emitting element chip 2 and the upper surface of the mount 1 following the side surfaces.
Although it is preferable to use a silicone resin composition or a modified silicone resin composition as a material for the protective coating 3, an insulating resin composition having translucency such as an epoxy resin composition, a modified epoxy resin composition, or an acrylic resin composition. Can be used.
In this specific example, the fluorescent material 6 is mixed in the protective film 3, but a pigment, a diffusing agent, and the like can be further mixed in accordance with a desired application.
Further, for example, the protective film containing the phosphor can be formed by stencil printing or screen printing using a translucent material containing the phosphor.

  As a bonding member for fixing the mount 1 to the support (heat radiating member), it is preferable to use a conductive adhesive such as Au paste, Ag paste, etc., so that heat dissipation of heat generated by the semiconductor light emitting element chip can be improved. Can be improved.

<Support>
In the first embodiment, as shown in FIG. 3 and the like, the support body 110 has a second member 112 that constitutes a side wall portion and holds the positive and negative lead electrodes, and a mounting base 111a, and is a second member. The first member 111 is combined with the central portion of the member 112. Here, the second member 112 is made of, for example, a thermoplastic resin, and the first member 111 is made of, for example, a metal. Such a support can be formed relatively easily by transfer molding, insert molding, or the like.

  As the thermoplastic material constituting the second member 112, aromatic nylon resin, polyphthalamide resin (PPA), sulfone resin, polyamideimide resin (PAI), polyketone resin (PK), polycarbonate resin, polyphenylene sulfide (PPS) ), Thermoplastic resins such as liquid crystal polymer (LCP), ABS resin, PBT resin, and the like. In addition, you may use what contained glass fiber in these thermoplastic resins as a material which comprises the 2nd member 112. FIG. Thus, by containing glass fiber, it is possible to form a support body having high rigidity and high strength.

  Further, when a display is configured by arranging a plurality of light emitting devices according to the present invention, the support is preferably colored in a dark color system such as black or gray in order to provide light shielding properties. As a colorant for coloring the support in a dark color system, various dyes and pigments may be mixed with the thermoplastic resin. Specifically, examples of the dye and pigment include Cr2O3, MnO2, Fe2O3, and carbon black.

In the first embodiment, the first member 111 is preferably made of a material having higher thermal conductivity than the second member 112 in order to effectively dissipate heat generated by the light emitting element. As the material, metal is used.
The second member 112 according to the first embodiment has a function of dissipating heat released from the light emitting element from the back surface at the same time as placing the light emitting element on the concave side of the support.

  Therefore, it is preferable that the material of the first member 111 is, for example, a metal having a good thermal conductivity in order to efficiently release heat to the outside as a heat radiating member. The thermal conductivity of the material of the second member 112 is preferably 0.01 cal / (s) (cm 2) (° C./cm) or more, more preferably 0.5 cal / (s) (cm 2) (° C./cm) or more. It is.

  As the material of the first member 111, a material obtained by subjecting the surface of copper or phosphor bronze plate to metal plating or solder plating of silver, palladium, silver, gold or the like is preferably used. When silver plating is performed in this manner, the reflectance of light emitted from the light emitting element is increased, and the light extraction efficiency of the light emitting device is also improved. The first member 111 may have various shapes such as a columnar shape and a prismatic shape, but the shape is such that the conductive wire does not contact the first member 111.

  In addition, the first member 111 is formed with an annular flange or a plurality of arranged protrusions on the side surface as shown in FIG. 1 and FIG. 2 so as not to be separated from the second member 112 (in order to prevent disconnection). Therefore, a highly reliable semiconductor device can be obtained.

  As shown in FIGS. 3, 4, and the like, the second member 112 has a V-shaped groove 112 b to which the end of the light-transmitting cover is joined and a concave portion of the support 110. A first step 112s1 and a second step 112s2 are formed so as to be sequentially lower than the upper end surface of the side wall. Note that the positive and negative lead electrodes 113 are inserted and held in the first member 111 so that the upper surface of the positive and negative lead electrodes 113 is almost the same height as the second step 112s2, and a notch 112a is formed in a part of the first step 112s1. It is exposed by forming.

  The first member 111 has a mounting base 111 a and a third step 111 b that constitutes the lowest part of the bottom surface of the recess 110 r of the support 110, and is combined with the center portion of the second member 112. Specifically, for example, the first member 111 and the second member 111 are formed using insert molding in which the first member 111 made of metal is held in the mold and the resin constituting the second member 112 is injected into the mold. The members 112 are combined.

  The lead electrode in the support is a member for electrically connecting an external electrode of the semiconductor device and a semiconductor element disposed on the support. In this embodiment, the lead electrode includes an outer lead portion that protrudes from the side surface of the support, and an inner lead that extends through the outer wall surface of the support and into the recess of the support, and has an exposed end. It consists of parts. The lead electrode can be formed in various sizes in consideration of heat dissipation, electrical conductivity, characteristics of the semiconductor element, and the like. The specific electric resistance of the lead electrode is preferably 300 μΩ · cm or less, more preferably 3 μΩ · cm or less. The specific thermal conductivity is preferably 0.01 cal / (s) (cm 2) (° C./cm) or more, more preferably 0.5 cal / (s) (cm 2) (° C./cm) or more. .

  As such a lead electrode, a copper or phosphor bronze plate surface that is subjected to metal plating such as silver, palladium, gold, silver or solder plating is preferably used. Such silver plating is preferable because the reflectance of the light emitted from the light emitting element is increased and the light extraction efficiency of the semiconductor light emitting device is improved. In the present embodiment, various thicknesses of 0.1 mm to 2.0 mm are preferable from the viewpoint of workability although they can be variously used depending on electric conductivity and thermal conductivity.

In the form shown in FIG. 3 and the like, the first member 111, the second member 112, and the lead electrode 113 are integrally molded by insert molding, but the first member 111 and the lead electrode are formed on the second member 112. 113 may be produced by fitting or the like.
In the drawings attached to the present specification, the outer shape of the support is circular when viewed from above, but in the present invention, any three-dimensional shape such as an ellipse, a rectangular parallelepiped, or a polygon may be used.

<Translucent cover>
In the first embodiment, the translucent cover 120 is made of a translucent resin molded into a dome shape (hemispherical shape), for example, and its end (joint portion with the support) is V-shaped. It is processed into a sharp shape according to the shape of the groove 112b.
In this embodiment, the translucent cover is disposed on the support so as to cover the members mainly to protect the light emitting element, the conductive wire, and the like from destruction by an external force, and preferably has a hemispherical spherical surface. A translucent lens.

  The material of the translucent cover 120 according to this embodiment can be an epoxy resin or a silicone resin having translucency. Alternatively, it may be composed of a translucent inorganic material including at least one selected from soda glass, silica glass, borosilicate glass, aluminoborosilicate glass, aluminosilicate glass, oxynitride glass, and chalcogenide glass. . By using such a material, a semiconductor device with high light resistance can be obtained. Further, by selecting a material having the same linear expansion coefficient as that of the support 110 (in particular, the second member 112) as the material of the translucent cover 120, a highly reliable semiconductor device can be obtained. .

  The adhesive for bonding the translucent cover 120 to the support 110 is selected from an epoxy resin, a polyimide resin, a polyamide resin, a fluorine elastomer, glass, a hot melt material, a modified silicone, and an organic-inorganic hybrid resin. In addition, the material may include at least one kind.

In the first embodiment, the mount-integrated light emitting element 101 is mounted on the mounting base 111a of the support 110 configured as described above, and then the end of the translucent cover 120 is aligned with the groove 112b of the support 110. And fix with adhesive.
Here, the mount-integrated light emitting element 101 is die-bonded to the central portion of the mounting base 111a, and then the two electrodes 4 exposed on the upper surface of the mount 1 are respectively exposed by forming the notch portions 112a. The positive and negative lead electrodes 113 are electrically connected by wire bonding.
Here, the mounting-integrated light emitting element 101 on the mounting base 111a can be adhered by a thermosetting resin or the like. Specifically, an epoxy resin, an acrylic resin, an imide resin, etc. are mentioned.

Then, after the mount-integrated light emitting element 101 is mounted on the support 110, the end of the translucent cover 120 is positioned by the V-shaped groove 112b of the support 110, and the translucent cover 120 is attached with an adhesive. Fix to the support 110.
In the first embodiment, an adhesive reservoir portion is formed at the joint portion of the support 110 with the translucent cover 120, as indicated by reference numerals 112c and 112d in FIG. This prevents the adhesive from protruding.

  In the light emitting device of the first embodiment configured as described above, the joint portion between the support 110 and the translucent cover 120 and the boundary portion between the first member 111 and the second member 112 in the support 110 are hermetically sealed. Therefore, it can be manufactured at a low cost.

  The light emitting device 100 of the first embodiment configured as described above can be used in place of a miniature light bulb of a flashlight as shown in FIG. That is, it is disposed at the center of a conical reflecting mirror 201 provided in the housing 200, and the light emitted in the lateral direction out of the emitted light is mainly reflected by the reflecting mirror 201 and emitted toward the front. Is done.

In addition, a nitride semiconductor light-emitting device configured by growing a nitride semiconductor layer on a light-transmitting substrate such as sapphire or a nitride semiconductor substrate emits a relatively large amount of light from the side surface of the device. However, with the structure shown in Embodiment Mode 1, light emitted from the side surface of the light-emitting element can be used more effectively.
In addition, by modifying the basic structure shown in FIG. 1, the light emitting device according to the present invention can obtain desired light directivity characteristics.

Further, in the light emitting device of the first embodiment, the light emitting element 10 is mounted on the mounting base 111a provided so as to protrude from the bottom surface of the recess 110r, and the light emitting element 10 viewed the light emitting device from the side. Sometimes, the side surface of the light emitting element 10 is disposed at a position where the light emitting element 10 can be seen through the translucent cover 120, so that the light emitted from the side of the light emitting element is blocked by the side wall of the support. It is emitted without.
In addition, since wire bonding is performed at a position one step lower than the first step 112s1 exposed by forming the notch 112a in a part of the first step 112s1, the shape of the end portion of the lead electrode and the optical portion of the bonding portion are bonded. The influence on the characteristics can be suppressed, and the uniformity of the directivity characteristics in the lateral direction is maintained.

Embodiment 2. FIG.
The light emitting device according to the second embodiment of the present invention is configured by using a light transmitting cover 121 having a reflection surface 121a on the inner wall surface instead of the light transmitting cover 120 in the light emitting device according to the first embodiment. Is configured similarly to the light emitting device of the first embodiment. That is, the inner wall surface of the translucent cover 121 in the second embodiment has a reflection surface that reflects light from the semiconductor light emitting element chip so as to be substantially parallel to the mounting surface of the semiconductor light emitting element chip. ing.

  Specifically, the translucent cover 121 has a conical projection 121a with a straight line passing through the center of the hemisphere and perpendicular to the mounting surface of the semiconductor light emitting element chip as a central axis. The reflection film 121b is formed on the conical surface.

  As shown in FIG. 8, the light emitting device of the second embodiment configured as described above emits stronger light in the lateral direction than the light emitting device of the first embodiment. When the light-emitting device of Embodiment 2 that emits strong light in the lateral direction is used in the flashlight shown in FIG. 6, strong light can be emitted forward, and a highly directional flashlight can be configured ( FIG. 7).

Modified example.
In the above embodiment, the groove 112b is formed in the outer peripheral portion of the support 110, and the translucent cover 120 is positioned and fixed by the adhesive. However, the present invention is not limited to this. .
For example, as shown in FIG. 9, the translucent cover 120 may be fixed to the support 110 by forming an outer peripheral guide 112g for positioning the translucent cover 120 in place of the groove 112b. .

  Further, as shown in FIG. 10, a convex portion 120k is formed on the outer periphery of the end portion of the translucent cover, and a concave portion 112k in which the convex portion 120k fits is formed on the support body 110 instead of the groove 112b. By combination, the translucent cover and the support 110 may be fixed.

In the light emitting device according to the present invention, a semiconductor element other than a light emitting element such as a light receiving element may be mounted in the support body instead of the light emitting element.
In the light emitting device according to the present invention, a protective element (such as a Zener diode or a capacitor) for preventing the semiconductor light emitting element from being damaged by static electricity, surge voltage or the like may be provided in the support body together with the light emitting element. it can.

  In the light emitting device according to the present invention, an inert gas can be enclosed in the hollow portion. Thereby, oxidation of the lead electrode and the conductive wire can be prevented and the reliability can be further improved. For example, argon or helium can be used as the inert gas.

It is a perspective view which shows the structure of the light-emitting device of Embodiment 1 which concerns on this invention. FIG. 3 is a perspective view illustrating a configuration in a state where a light-transmitting cover is removed in the light-emitting device of Embodiment 1. It is a cross-sectional perspective view which shows the structure of the light-emitting device of Embodiment 1 which concerns on this invention. It is sectional drawing which expands and shows the junction part of the translucent cover and support body 110 in FIG. 3 is a plan view showing a configuration of a mount-integrated light emitting element in Embodiment 1. FIG. It is a schematic sectional drawing about the AA line of FIG. 5A. 3 is a partial cross-sectional view illustrating a configuration of a flashlight as an application example of the light-emitting device according to Embodiment 1. FIG. It is a fragmentary sectional view which shows the structure of the light-emitting device of Embodiment 2 which concerns on this invention. 5 is a graph schematically showing light distribution characteristics of the light-emitting device of Embodiment 2. It is a fragmentary sectional view which shows the structure of the junction part of the translucent cover and support body in the light-emitting device of the modification concerning this invention. It is a fragmentary sectional view which shows the structure of the junction part of the translucent cover and support body in the light-emitting device of another modification which concerns on this invention.

Explanation of symbols

1 ... Mount,
2 ... Semiconductor light emitting device chip,
2u ... underfill,
3 ... Protective coating,
4 ... Electrodes,
5 ... Joining member,
6 ... Fluorescent substance,
10: Light emitting element,
100: light emitting device,
101 ... Light-emitting element with an integrated mount,
110 ... support,
110r ... concave portion,
111 ... 1st member,
111a ... mounting base,
111b ... the third step,
112 ... second member,
112s1 ... 1st step,
112s2 ... 2nd step,
112a ... notch,
112b ... V-shaped groove,
113 ... Lead electrode,
120 ... translucent cover,
121a ... reflective surface,
121b ... reflective film,
200 ... housing,
201: Reflector.

Claims (9)

A light emitting device having a support having a positive lead electrode and a negative lead electrode, a light emitting element mounted on the support, and a translucent cover covering the light emitting element,
The light emitting device is characterized in that a semiconductor light emitting device chip is covered with a protective film, and the light emitting device is disposed in a hollow portion constituted by the translucent cover and the support. apparatus.   The said light emitting element is arrange | positioned in the position which can be visually recognized through the said translucent cover, when the said light-emitting device is seen from the direction orthogonal to the side surface of a light emitting element. Light-emitting device.   The light-emitting device according to claim 1, wherein the support has a recess and a mounting base provided so as to protrude from the bottom surface of the recess, and the light-emitting element is mounted on the mounting base.   The support includes a first member having the mounting base, and a second member that constitutes a side wall portion of the support and holds the lead electrode, and the first member is a central portion of the second member. The light emitting device according to claim 3, wherein the light emitting device is combined.   The light emitting device according to claim 4, wherein the first member has a higher thermal conductivity than the second member.   The light-emitting device according to claim 1, wherein at least the outer shape of the translucent cover is a hemispherical shape.   The light emitting device according to claim 6, wherein an inner wall surface of the translucent cover has a hemispherical shape.   The light emitting device according to claim 6, wherein an inner wall surface of the translucent cover has a reflection surface that reflects light from the semiconductor light emitting element chip so as to be substantially parallel to a mounting surface of the semiconductor light emitting element chip. apparatus. The light emitting device according to claim 8, wherein the reflecting surface has a conical shape.

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