JP2006202589A - Electron source and manufacturing method of the same, electro-optical device, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron source with a difference in the level of the formation face of an element electrode taken into consideration, hardly generating wire disconnection, and to provide a manufacturing method of the same, an electro-optical device, and an electronic apparatus. <P>SOLUTION: The electron source 1 is composed of a lower layer insulation part 21 formed into a laminar shape with a thickness almost the same as that of a first signal wire 16, and having a reversed pattern of the first signal wire 16; and an upper layer insulation part 22 formed into a laminar shape with a thickness almost the same as that of the element electrodes 14, 15, having reversed patterns of the element electrodes 14, 15. The electron source 1 is formed into lamination structure in which the first signal wire 16 and the lower layer insulation part 21 form a first layer, the element electrodes 14, 15 and the upper layer insulation part 22 form a second layer, and a conductive thin film 12 and a second signal wire 17 are formed on the second layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an electron source including a surface conduction electron-emitting device, a manufacturing method thereof, an electro-optical device including the electron source, and an electronic apparatus.

Conventionally, thermionic emission type and cold cathode electron emission type are known as electron emission elements. As a cold cathode electron emission type electron-emitting device, a field emission type that emits electrons by an electric field, and a surface conduction type that emits electrons from the conduction band of the electrode surface by passing a current through the electrode are known. ing.
Among these, a surface conduction electron-emitting device is known in which an electron-emitting portion is formed on a conductive thin film by energization forming. Due to energization forming, a locally broken micro crack (narrow gap) is formed in the conductive thin film, and when current is passed through the conductive thin film in this state, the electrons at the vacuum level leak out from the crack. Is used as an electron emission portion. The electron-emitting device is driven by applying an electrical signal to a pair of device electrodes connected to the conductive thin film. For example, Patent Document 1 discloses an electrical wiring for applying an electrical signal to an electron-emitting device and a device electrode. Are disclosed in a matrix type.
In an electron source according to Patent Document 1, an insulating layer is formed on the entire surface of a substrate on which a lower signal line is formed, and a contact hole is further formed in the insulating layer, and then a pair of element electrodes, an upper signal line, and a conductive thin film Are manufactured sequentially.

JP-A-6-342636

  However, in the above-described manufacturing method, it is difficult to form the element electrode formed across the step of the contact hole with a uniform film thickness. Therefore, the locally thinned element electrode may be disconnected. A method of forming the device electrode after filling the contact hole with a conductive material is also conceivable, but this increases the resistance of the connection between the lower signal line and the device electrode.

  The present invention has been made in order to solve the above-described problems. An electron source, an electron source manufacturing method, an electro-optical device, an electron, and an electron source, in which an element electrode forming surface is considered and a disconnection of the element electrode is unlikely to occur. The purpose is to provide equipment.

The present invention provides a conductive thin film having an electron emission portion, a pair of element electrodes that are electromechanically connected to the conductive thin film, and first and second wirings corresponding to the pair of element electrodes, respectively. A method of manufacturing an electron source including a signal line, the step of forming a first signal line on one surface of a substrate, and a spacer corresponding to the film thickness of the first signal line on one surface of the substrate And a step of forming the pair of element electrodes on the lower layer insulating portion and the first signal line.
According to the method for manufacturing an electron source of the present invention, the step due to the film thickness of the first signal line is compensated by the lower insulating layer and the formation surface of the element electrode is flattened, so that the element electrode is less likely to be disconnected. .

  In the method of manufacturing an electron source, the first and second signal lines function as spacers corresponding to the film thickness of the pair of element electrodes on the lower insulating layer and the first signal line. A step of forming an upper insulating portion that electrically insulates the substrate, and a step of forming the second signal line on the upper insulating portion and on the second element electrode. . Preferably, the method further includes the step of forming the conductive thin film on the upper insulating portion and the second element electrode.

  According to the method of manufacturing an electron source of the present invention, the step due to the film thickness of the element electrode is compensated for by the upper insulating layer, and the step due to the film thickness of the element electrode is compensated by the lower insulating layer. Thus, the formation surface of the second signal line is flattened, and disconnection of the second signal line is less likely to occur. Moreover, the formation surface of the conductive thin film is flattened, and disconnection of the conductive thin film is less likely to occur.

In the method for manufacturing an electron source, the lower insulating layer is patterned using a droplet discharge method.
According to the electron source of the manufacturing method of the present invention, it is easy to form the pattern of the lower insulating layer.

The electron source of the present invention includes a conductive thin film having an electron emission portion, a pair of element electrodes that are electromechanically connected to the conductive thin film, and a wiring corresponding to each of the pair of element electrodes. As a spacer corresponding to the film thickness of the first signal line formed on one side of the element electrode, the second signal line formed on the other side of the pair of element electrodes, and the first signal line And a functioning lower insulating layer.
According to the electron source of the present invention, the step due to the film thickness of the first signal line is compensated by the lower insulating portion, and the formation surface of the element electrode is flattened, so that the element electrode is less likely to be disconnected.

The electro-optical device of the present invention includes the electron source.
The electro-optical device according to the present invention includes an electron source in which an electron emission portion is arranged corresponding to a pixel of the display portion. For example, the emission electron hits a phosphor applied to the anode to perform display. In this electro-optical device, the lower layer insulating portion and the upper layer insulating portion compensate for the step on the pattern forming surface depending on the film thickness of the signal line and the element electrode, and the signal line, the element electrode, etc. are less likely to be disconnected. Is excellent.

The electronic device of the present invention includes the electron source.
In the electronic device according to the present invention, the lower layer insulating portion and the upper layer insulating portion compensate for the step on the pattern formation surface depending on the film thickness of the signal line and the element electrode, and the signal line and the element electrode are not easily disconnected. Excellent in properties.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described in detail with reference to the accompanying drawings.
Note that the embodiments described below are preferred specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention is particularly limited in the following description. Unless otherwise stated, the present invention is not limited to these forms. In the drawings referred to in the following description, the scale and aspect ratio of each layer and each member are shown to be different from the actual ones so that each layer and each member can be recognized on the drawing. .

(First embodiment)
(Configuration of electron-emitting device)
First, the configuration of the electron-emitting device will be described with reference to FIG. 1A and 1B are diagrams showing a main part structure of an electron source according to the first embodiment, wherein FIG. 1A is a plan view and FIG. 1B is a partially broken perspective view.
In FIG. 1, an electron source 1 includes an element substrate 11 forming a base, an electron emitter 10, a first element electrode 14 and a second element electrode 15 formed as ohmic electrodes of the electron emitter 10, A first signal line 16 and a second signal line 17 for transmitting an electric signal applied to the device electrodes 14 and 15 are provided. Further, the electron source 1 includes a lower layer insulating portion 21 formed with substantially the same thickness as the first signal line 16 and an upper layer insulating portion 22 formed with substantially the same thickness as the device electrodes 14 and 15. Although description of the entire structure of the electron source 1 is omitted, the periphery of the electron-emitting device 10 is sealed in a high vacuum.

The electron-emitting device 10 is a so-called electron-emitting portion 13 (illustrated schematically) by forming a narrow crack in the conductive thin film 12 having a thickness of several angstroms to several thousand angstroms by energization forming or the like. It is of the surface conduction type. Examples of the material of the conductive thin film 12 include metals such as Pd, Pt, Ti, Ru, In, Cu, Cr, Ag, Au, Fe, Zn, Sn, Ta, W, and Pb, PdO, SnO ₂ , Oxides such as In ₂ O ₃ , PbO, Sb ₂ O ₃ , borides such as HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB ₄ , GdB ₄ , TiC, ZrC, HfC, TaC, SiC, WC, etc. Carbides, nitrides such as TiN, ZrN, and HfN, semiconductors such as Si and Ge, and carbon can be used. In this embodiment, PdO is used in particular.

  The device electrodes 14 and 15 and the signal lines 16 and 17 are both conductive films having a film thickness of about several tens of nm to several μm formed of a conductor, and are Au, Mo, W, Pt, Ti, Al, Cu, Metals such as Pd, Ni, Cr, and alloys thereof, and transparent conductors such as indium tin oxide (ITO) can be used. In the present embodiment, Ni is used for the device electrodes 14 and 15 and Au is used for the signal lines 16 and 17. The reason why the two materials are different is that the main function intended for the purpose is as follows. Because it is different. That is, the element electrodes 14 and 15 have a function of establishing an ohmic connection with the conductive thin film 12, and the signal lines 16 and 17 have a function of transmitting an electric signal with a low resistance. Although the film thickness may be different depending on the same purpose, the device electrodes 14 and 15 and the signal lines 16 and 17 are formed separately because of such circumstances.

The first signal line 16 is formed on the lower surface 14b, 15b side of the element electrodes 14, 15 and is electromechanically connected to the first element electrode 14 on the lower surface 14b. The second signal line 17 is formed on the upper surface 14a, 15a side of the element electrodes 14, 15, and is electromechanically connected to the second element electrode 15 on the upper surface 15a.
The lower layer insulating portion 21 is formed of an insulator such as SiO ₂ and has a layer shape with substantially the same thickness as the first signal line 16, and is inverted from the first signal line 16 when viewed in a plan view. There is a pattern. The lower insulating layer 21 functions as a spacer corresponding to the film thickness of the first signal line 16, and forms a first layer in the cross-sectional structure of the electron source 1 together with the first signal line 16.
The upper layer insulating portion 22 is formed of an insulator such as SiO ₂ , has a layer shape with substantially the same thickness as the element electrodes 14 and 15, and has an inverted pattern of the element electrodes 14 and 15 as viewed in a plan view. There is no. The upper insulating portion 22 functions as a spacer corresponding to the film thickness of the device electrodes 14 and 15, and forms a second layer in the cross-sectional structure of the electron source 1 together with the device electrodes 14 and 15, and the first signal line 16 and the second signal line 17 are electrically insulated.
Thus, in the electron source 1, the first signal line 16 and the lower layer insulating portion 21 form a first layer, the device electrodes 14 and 15 and the upper layer insulating portion 22 form a second layer, and the second layer It has a laminated structure in which the conductive thin film 12 and the second signal line 17 are formed thereon.

The electron source 1 has a planar structure in which the first and second signal lines 16 and 17 extend along the Y-axis direction and the X-axis direction, respectively, and the device electrodes 14 are equally spaced along the extension direction. , 15 are arranged, and one electron-emitting device 10 is formed corresponding to the pair of device electrodes 14, 15.
A scanning signal for sequentially driving the electron-emitting devices 10 row by row (alignment in the X-axis direction in the figure) is selected for the second signal line 17, and the scanning signal is selected for the first signal line 16. A gradation signal for controlling electron emission of the electron-emitting devices 10 in the selected row is applied. Thus, when a voltage difference is generated between the device electrodes 14 and 15 due to the electrical signals transmitted through the signal lines 16 and 17, electron conduction occurs in the conductive thin film 12 across the electron emission portion 13. At this time, a part of the electrons conducted through the crack of the electron emission portion 13 leaks into the vacuum due to the quantum mechanical effect, and these electrons are used as emitted electrons.

(Configuration of droplet discharge device)
Next, the configuration of the droplet discharge device used for manufacturing the electron source 1 will be described with reference to FIG. FIG. 2 is a schematic perspective view showing an example of a droplet discharge device used for manufacturing an electron source.
As shown in FIG. 2, the droplet discharge device 100 mounts a head mechanism unit 102 having a head unit 110 that discharges droplets and a substrate 120 that is a discharge target of droplets discharged from the head unit 110. The substrate mechanism unit 103, the functional liquid supply unit 104 that supplies the functional liquid 133 to the head unit 110, and the control unit 105 that collectively controls these mechanism units and the supply unit.
The head unit 110 is equipped with a droplet discharge head (not shown) having a plurality of nozzles as used in an ink jet printer, and receives an electrical signal from the control unit 105 and uses the functional liquid 133 as droplets. Discharge. In addition, the ejection of droplets can be controlled for each nozzle by the control unit 105.

As the substrate 120, most substrates such as a glass substrate, a metal substrate, a synthetic resin substrate and the like can be used. In the manufacture of an electron source to be described later, the element substrate 11 shown in FIG.
Examples of the functional liquid 133 include filter materials for color filters, luminescent materials and fluorescent materials used in optical display devices, curable resin materials for forming banks and surface coating layers on the surface of substrates, electrodes, and metal wirings. A solution containing a conductive material for forming a film, an insulating material for forming an insulating film, a resist material, and the like is prepared according to the purpose.

  The droplet discharge device 100 includes a plurality of support legs 106 installed on the floor and a surface plate 107 installed on the upper side of the support legs 106. On the upper side of the surface plate 107, the substrate mechanism unit 103 is disposed over the longitudinal direction (X-axis direction) of the surface plate 107, and above the substrate mechanism unit 103, two columns fixed to the surface plate 107 are provided. The head mechanism unit 102 that is supported at both ends is arranged in a direction (Y-axis direction) orthogonal to the substrate mechanism unit 103.

  The head mechanism unit 102 includes a head unit 110 that discharges the functional liquid 133, a carriage 111 on which the head unit 110 is mounted, a Y-axis guide 113 that guides the movement of the carriage 111 in the Y-axis direction, and a Y-axis guide 113. A Y-axis ball screw 115 installed along the Y-axis motor 114 that rotates the Y-axis ball screw 115 forward and backward, and a lower part of the carriage 111, which is screwed with the Y-axis ball screw 115 to move the carriage 111. And a carriage screwing portion 112 in which a female screw portion is formed.

  The movement mechanism of the substrate mechanism unit 103 is arranged in the X-axis direction with a configuration substantially the same as that of the head mechanism unit 102, and an X for guiding the movement of the mounting table 121 and the mounting table 121 on which the substrate 120 is mounted. An axis guide 123, an X axis ball screw 125 installed along the X axis guide 123, an X axis motor 124 for rotating the X axis ball screw 125 forward and backward, and a lower part of the mounting table 121, the X axis ball A mounting table screwing portion 122 that is screwed with the screw 125 to move the mounting table 121 is provided.

  The functional liquid supply unit 104 that supplies the functional liquid 133 to the head unit 110 includes a tube 131 a that forms a flow path that communicates with the head unit 110, a pump 132 that supplies liquid to the tube 131 a, and a functional liquid 133 that is supplied to the pump 132. And a tank 130 that communicates with the tube 131b and stores the functional liquid 133, and is disposed at one end on the surface plate 107.

With these configurations, the head unit 110 can reciprocate relative to the substrate 120 in the Y-axis direction and the X-axis direction, respectively, and droplets ejected from the head unit 110 can be transferred onto the substrate 120. It can be landed at any position. Then, by performing this position control and the ejection control for each nozzle in the head unit 110 in synchronization, the functional liquid 133 can be arranged (drawn) on the substrate 120 in a predetermined pattern.
In FIG. 2, the functional liquid supply unit 104 is drawn so as to supply one type of functional liquid to the head unit 110, but actually, it is configured to be able to supply a plurality of types of functional liquid at a time. In addition, the head unit 110 can simultaneously discharge a plurality of types of functional liquids.

(Electron source manufacturing process)
Next, an electron source manufacturing process will be described with reference to FIGS. FIGS. 3A to 3C and FIGS. 4D to 4F are partially broken perspective views showing one process in the manufacturing process of the electron source according to the first embodiment.

First, as shown in FIG. 3A, on an element substrate 11 formed of glass or ceramic,
The first signal line 16 is patterned using a droplet discharge method. Specifically, using the droplet discharge device 100 shown in FIG. 2, a functional liquid in which conductive fine particles are dispersed in a dispersion medium is arranged in a pattern on the element substrate 11, and the functional liquid is solidified by drying, baking, or the like. Thus, film formation is performed.
The conductive fine particles are obtained by forming the conductive material used for the signal lines 16 and 17 into fine particles, and the surface can be coated with an organic substance or the like in order to improve dispersibility. As the dispersion medium, water, alcohols, hydrocarbon compounds, ether compounds or the like are used, and the vapor pressure thereof is the drying speed at the time of film formation or the storage stability when stored in the droplet discharge device 100. From the viewpoint of the above, it is preferable to set the pressure in the range of 0.1 Pa to 27 kPa. The surface tension of the functional liquid is preferably in the range of 0.02 N / m or more and 0.07 N / m or less from the viewpoint of ejection stability or the like, and can be adjusted by adding a surfactant. In addition, a resin for improving the fixability after film formation and various additives for adjusting the viscosity and adjusting the storage stability can be appropriately added to the functional liquid.
Prior to drawing, as a pretreatment, it is also possible to perform a surface treatment such as lyophilicity and liquid repellency (for example, plasma treatment or film formation with surface adsorbed molecules) in accordance with a pattern to be arranged. By performing such pretreatment, the functional liquid can be arranged in a pattern with higher accuracy. Further, instead of such a droplet discharge method, the signal line 16 may be patterned using a photolithography technique or a printing method.

Next, as shown in FIG. 3B, a lower layer insulating portion 21 is pattern-formed on the element substrate 11 by using a droplet discharge method. The functional liquid used at this time is a functional liquid containing insulating fine particles such as SiO ₂ . The lower insulating portion 21 is formed in a layer shape with substantially the same thickness as the first signal line 16 and so as to form an inverted pattern of the first signal line 16 when viewed from the plan view. Since the lower insulating layer 21 is formed by using a droplet discharge method, the process is easy even with such a complicated pattern.
Thus, the upper surface 16a of the first signal line 16 and the upper surface 21a of the lower insulating layer 21 are integrated to form a smooth surface 23 having almost no step.

  Next, as shown in FIG. 3C, the device electrodes 14 and 14 are formed on the smooth surface 23 formed by the first signal line 16 and the lower insulating layer 21 by using a droplet discharge method or a photolithography technique. 15 is formed into a pattern. At this time, the first element electrode 14 is electromechanically connected to the first signal line 16 on the upper surface 16a. In addition, since the device electrodes 14 and 15 are formed on the smooth surface 23, they are formed with a substantially uniform film thickness and are less likely to cause local disconnection.

Next, as shown in FIG. 4 (d), the upper insulating layer 22 is formed on the smooth surface 23 formed by the first signal line 16 and the lower insulating layer 21 in the same procedure as the lower insulating layer 21. Form a pattern. The upper layer insulating portion 22 is formed in a layer shape with substantially the same thickness as the element electrodes 14 and 15 and so as to form an inverted pattern of the element electrodes 14 and 15 when viewed from the plan view. Since the upper insulating portion 22 is also formed by using a droplet discharge method, the process is easy even with such a complicated pattern.
Thus, the upper surfaces 14a and 15a of the device electrodes 14 and 15 and the upper surface 22a of the upper insulating portion 22 are integrated to form a smooth surface 24 having almost no step.

  Next, as shown in FIG. 4E, the second signal is formed on the smooth surface 24 formed by the device electrodes 14 and 15 and the upper insulating portion 22 in the same procedure as the case of the first signal line 16. Line 17 is patterned. At this time, the second signal line 17 is electromechanically connected to the second element electrode 15 on the upper surface 15a. Further, since the second signal line 17 is formed on the smooth surface 24, the second signal line 17 is formed with a substantially uniform film thickness, and local disconnection hardly occurs.

Next, as shown in FIG. 4F, the conductive thin film 12 is formed on the smooth surface 24 formed by the device electrodes 14 and 15 and the upper insulating layer 22 by using a droplet discharge method or a photolithography technique. Form. At this time, both ends of the conductive thin film 12 are electromechanically connected to the device electrodes 14 and 15, respectively. Further, since the conductive thin film 12 is formed on the smooth surface 24, the conductive thin film 12 is formed with a substantially uniform film thickness, and local disconnection hardly occurs.
Finally, an electron emission portion 13 (see FIG. 1) is formed in the conductive thin film 12 by energization forming or the like, and the mounting surface side (the upper surface side in the drawing) of the element substrate 11 is sealed in a high vacuum state. 1 is completed.

(Configuration of electro-optical device)
Next, the configuration of the electro-optical device will be described with reference to FIG. FIG. 5 is a partial cross-sectional view showing the main structure of the electro-optical device.
In FIG. 5, an electro-optical device 70 includes an electron source 1 in which an electron-emitting device 10, device electrodes 14 and 15, and signal lines 16 and 17 are arranged on a device substrate 11, and a display substrate 71 that faces the device substrate 11. It has. The element substrate 11 and the display substrate 71 are kept at a constant interval via an outer frame member (not shown), and the space 72 between the substrates 11 and 71 is sealed in a vacuum state of about 10 ⁻⁷ Pa. Further, a spacer member for maintaining the distance between the substrates 11 and 71 is formed by extending in the X-axis direction on the second signal line 17 or the smooth surface 24, or in order to maintain the degree of vacuum. In some cases, a gas adsorption film (not shown) is formed on the surface with respect to the space 72 by vapor deposition.

The display substrate 71 includes a counter electrode 73, a fluorescent film 74, and a light shielding film 75. The light shielding film 75 is formed in accordance with the arrangement of the electron-emitting devices 10 so as to partition the pixels, and plays a role of reducing crosstalk between pixels and reflection of external light from the fluorescent film 74. As the material, a material having conductivity and light shielding properties such as graphite is used.
The phosphor film 74 contains a phosphor, and the phosphor emits light due to the collision of the emitted electrons from the electron-emitting device 10 and plays a role in lighting the pixel. When the electro-optical device 70 is a color display type, the fluorescent film 74 is formed by being divided for each pixel by phosphors corresponding to the three primary colors.
An acceleration voltage (for example, about 10 kV) is applied to the counter electrode 73 and plays a role of accelerating the emitted electrons in order to give sufficient energy to excite the phosphor of the phosphor film 74. For the counter electrode 73, for example, a transparent conductor such as ITO is used.

  In the above-described configuration, the scanning signal applied to the second signal line 17 and the gradation signal applied to the first signal line 16 are controlled to emit electrons from the electron-emitting device 10 and accelerated by the counter electrode 73. When the emitted electrons collide with the fluorescent film 74, the pixel is turned on, and a desired image is displayed. Since the electro-optical device 70 includes the electron source 1 described above, the signal lines 16 and 17 and the element electrodes 14 and 15 are not easily disconnected, and is excellent in reliability. Further, when the spacer member is formed on the second signal line 17 or the smooth surface 24, since the formation surface is flat, the distance between the substrates 11 and 71 can be easily defined by the thickness of the spacer. It is possible to reduce the variation in light emission characteristics between the two.

(Electronics)
Next, a specific example of the electronic device will be described with reference to FIG. FIG. 6 is a schematic perspective view illustrating an example of an electronic apparatus.
A portable information processing device 700 as an electronic apparatus illustrated in FIG. 6 includes a keyboard 701, an information processing body 703, and an electro-optical device 702. More specific examples of such a portable information processing apparatus 700 are a word processor and a personal computer. Since this portable information processing device 700 is equipped with the electro-optical device 702 including the electron source 1 described above, the signal lines 16 and 17 and the element electrodes 14 and 15 are not easily disconnected, and the reliability is improved. Is excellent.
In addition, as another example of an electronic apparatus including the electron source according to the present invention, various apparatuses using the electron-emitting device 10 as a coherent electron source, such as a coherent electron beam converging apparatus, an electron beam holography apparatus, and a monochromatic type. There are electron guns, electron microscopes, multiple coherent electron beam creation devices, electron beam exposure devices, drawing devices for electrophotographic printers, and the like.

(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIGS. In addition, below, description is abbreviate | omitted about the content which overlaps with 1st Embodiment, and it demonstrates centering around difference. FIGS. 7A to 7C and FIGS. 8D to 8F are partially broken perspective views showing one process in the manufacturing process of the electron source according to the second embodiment.

  In the second embodiment, when the electron source 1 is manufactured, first, as shown in FIG. 7A, the recess 30 is formed in the element substrate 11 by pattern etching using a photolithography technique. The recess 30 is formed in accordance with the pattern of the first signal line 16 (see FIG. 7B) to be formed later, and thus the upper layer of the element substrate 11 partitioned by the imaginary line in the drawing. A portion is formed as the lower layer insulating portion 31. Then, as shown in FIG. 7B, the first signal line 16 is patterned so as to fill the recess 30, and the upper surface 16a of the first signal line 16 and the upper surface 31a of the lower insulating part 31 are integrated. Thus, the smooth surface 23 having almost no step is formed.

  As described above, the lower insulating layer in the present invention may be formed integrally with the element substrate 11. Regardless of whether it is a separate member, it is a requirement that it has a function as a spacer substantially corresponding to the film thickness of the first signal line 16. Further, the lower insulating layer may be formed before or after the first signal line is formed.

Next, as shown in FIG. 7C, the upper insulating layer 32 is patterned on the smooth surface 23 formed by the first signal line 16 and the lower insulating layer 31 by using a droplet discharge method. The upper insulating layer 32 is formed in a layer shape with substantially the same thickness as the device electrodes 14 and 15 (see FIG. 8D) formed on the smooth surface 23 thereafter. Further, it is formed in a pattern having a notch portion 33 for preventing interference with the second element electrode 15 and a protruding portion 34 forming a formation surface of the conductive thin film 12 (see FIG. 8F).
Next, as shown in FIG. 8D, the device electrodes 14 and 15 are formed. Thus, the upper surfaces 14a and 15a of the device electrodes 14 and 15 and the upper surface 32a of the upper insulating portion 32 are integrated to form a smooth surface 24 having almost no step.
Finally, as shown in FIGS. 8E and 8F, the second signal line 17 and the conductive thin film 12 are formed on the smooth surface 24, and the electron emitting portion 13 is formed on the conductive thin film 12. Then, the mounting surface side (the upper surface side in the drawing) of the element substrate 11 is sealed in a high vacuum state, and the electron source 1 is completed.

  Thus, the upper insulating portion in the present invention may be formed prior to the device electrodes 14 and 15. Further, the pattern is not limited to the inversion pattern of the device electrodes 14 and 15 as in the first embodiment, but is a smooth surface as a formation surface of the second signal line 17 together with the second device electrode 15. Any pattern can be used as long as it can form 24. The same can be said for the pattern of the lower insulating layer. In this case, any pattern may be used as long as the first signal line 16 and the smooth surface 23 as the formation surface of the device electrodes 14 and 15 and the conductive thin film 12 can be formed. .

  The present invention is not limited to the above-described embodiment. Moreover, each structure of each embodiment can combine these suitably, can be abbreviate | omitted, or can combine with the other structure which is not shown in figure.

(A) is a top view which shows the principal part structure of the electron source which concerns on 1st Embodiment. (B) is a partially broken perspective view showing the main structure of the electron source. The schematic perspective view which shows an example of the droplet discharge apparatus used for manufacture of an electron source. (A)-(c) is a partially broken perspective view which shows one process in the manufacturing process of the electron source which concerns on 1st Embodiment. (D)-(f) is a partially broken perspective view which shows one process in the manufacturing process of the electron source which concerns on 1st Embodiment. FIG. 3 is a partial cross-sectional view showing a main part structure of an electro-optical device. The schematic perspective view which shows an example of an electronic device. (A)-(c) is a partially broken perspective view which shows one process in the manufacturing process of the electron source which concerns on 2nd Embodiment. (D)-(f) is a partially broken perspective view which shows one process in the manufacturing process of the electron source which concerns on 2nd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Electron source, 10 ... Electron emission element, 11 ... Element board | substrate, 12 ... Conductive thin film, 13 ... Electron emission part, 14 ... 1st element electrode, 14a ... Upper surface as one surface of an element electrode, 14b ... Element electrode A lower surface as the other surface, 15 ... a second element electrode, 15a ... an upper surface as one surface of the element electrode, 15b ... a lower surface as the other surface of the element electrode, 16 ... a first signal line, 16a ... an upper surface, 17 ... 2nd signal line, 21 ... lower layer insulating part, 21a ... upper surface, 22 ... upper layer insulating part, 22a ... upper surface, 23 ... smooth surface, 24 ... smooth surface, 30 ... recess, 31 ... lower layer insulating part, 31a ... upper surface, 32 ... upper layer insulating part, 32a ... upper surface, 33 ... notch part, 34 ... protruding part, 70 ... electro-optical device, 71 ... display substrate, 72 ... space, 73 ... counter electrode, 74 ... fluorescent film, 75 ... light shielding film , 100 ... droplet discharge device, 700 ... as electronic equipment Portable information processing apparatus, 701 ... keyboard, 702 ...... electrooptic device, 703 ... information processing body.

Claims (6)

A conductive thin film having an electron emission portion; a pair of element electrodes that are electromechanically connected to the conductive thin film; and first and second signal lines wired corresponding to the pair of element electrodes, A method of manufacturing an electron source comprising:
Forming a first signal line on one surface of the substrate;
Forming a lower insulating layer functioning as a spacer corresponding to the thickness of the first signal line on one surface of the substrate;
Forming the pair of device electrodes on the lower insulating layer and on the first signal line. A method of manufacturing an electron source, comprising: On the lower insulating layer and on the first signal line, the upper insulating layer functions as a spacer corresponding to the film thickness of the pair of element electrodes and electrically insulates between the first and second signal lines. Forming a step;
The method of manufacturing an electron source according to claim 1, further comprising: forming the second signal line on the upper insulating layer and on the second element electrode.   The method of manufacturing an electron source according to claim 1, wherein the lower insulating layer is patterned using a droplet discharge method. A conductive thin film having an electron emitting portion;
A pair of device electrodes electromechanically connected to the conductive thin film;
A first signal line formed on one surface side of the pair of element electrodes and a second signal line formed on the other surface side of the pair of element electrodes, corresponding to each of the pair of element electrodes. When,
An electron source comprising: a lower insulating layer functioning as a spacer corresponding to the film thickness of the first signal line.   An electro-optical device comprising the electron source according to claim 4. An electronic device comprising the electron source according to claim 4.

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