JP2006195470A5

JP2006195470A5 -

Info

Publication number: JP2006195470A5
Application number: JP2006005543A
Authority: JP
Filing date: 2006-01-13
Publication date: 2006-11-09
Anticipated expiration: 2016-11-22

Claims

A thin film transistor using silicon as a source and a drain ;
An insulating film covering the source and drain;
A conductive film having a stacked structure connected to the source or drain through a contact hole provided in the insulating film ;
The conductive film having the stacked structure includes a first conductive film formed in contact with the source or drain and a second conductive film formed in contact with the first conductive film. A display device.

  A thin film transistor using silicon as a source and a drain;
  An insulating film covering the source and drain;
  A conductive film having a stacked structure connected to the source or drain through a contact hole provided in the insulating film;
  The conductive film having the stacked structure includes a first conductive film formed in contact with the source or drain, and a second conductive film formed in contact with the first conductive film.
  The first conductive film is formed along the contact hole,
  The display device, wherein the second conductive film is formed on a first conductive film formed along the contact hole.

  A thin film transistor using silicon as a source and a drain;
  An insulating film covering the source and drain;
  A conductive film having a stacked structure connected to the source or drain through a contact hole provided in the insulating film;
  The conductive film having the stacked structure includes a first conductive film formed in contact with the source or drain, and a second conductive film formed in contact with the first conductive film.
  The first conductive film is formed along the contact hole by a sputtering method,
  The display device, wherein the second conductive film is formed on the first conductive film formed along the contact hole by a sputtering method continuously with the first conductive film.

A thin film transistor using silicon as a source and a drain;
  A gate insulating film covering the source and drain;
  A first interlayer insulating film provided on the gate insulating film;
  A second interlayer insulating film provided on the first interlayer insulating film;
  A conductive film having a stacked structure connected to the source or drain through a contact hole provided in the gate insulating film, the first interlayer insulating film, and the second interlayer insulating film; ,
  The conductive film having the stacked structure includes a first conductive film formed so as to be in contact with the source or the drain and a second conductive film formed so as to be in contact with the first conductive film. A display device.

A thin film transistor using silicon as a source and a drain;
  An insulating film covering the source and drain;
  A conductive film having a stacked structure connected to the source or drain through a contact hole provided in the insulating film;
  The conductive film having the stacked structure includes a first conductive film formed in contact with the source or drain, and a second conductive film formed in contact with the first conductive film.
  The first conductive film is formed using a material having an oxidation potential lower than that of the silicon,
  The display device, wherein the second conductive film is formed using a material having an oxidation potential higher than that of the silicon.

A thin film transistor using silicon as a source and a drain;
  An insulating film covering the source and drain;
  A conductive film having a stacked structure connected to the source or drain through a contact hole provided in the insulating film;
  The conductive film having the stacked structure includes a first conductive film formed in contact with the source or drain, and a second conductive film formed in contact with the first conductive film.
  The first conductive film is formed along the contact hole using a material having an oxidation potential lower than that of the silicon.
  The display device, wherein the second conductive film is formed on the first conductive film formed along the contact hole using a material having an oxidation potential higher than that of the silicon.

A thin film transistor using silicon as a source and a drain;
  An insulating film covering the source and drain;
  A conductive film having a stacked structure connected to the source or drain through a contact hole provided in the insulating film;
  The conductive film having the stacked structure includes a first conductive film formed in contact with the source or drain, and a second conductive film formed in contact with the first conductive film.
  The first conductive film is formed along the contact hole by a sputtering method using a material having an oxidation potential lower than that of the silicon,
  The second conductive film is formed using a material having an oxidation potential higher than that of the silicon and continuously along the contact hole by a sputtering method with the first conductive film. A display device formed on top.

The display device according to claim 1, wherein the first conductive film is made of titanium.

The display device according to claim 1, wherein the first conductive film has a thickness of 10 nm or less.

The display device according to claim 1, wherein the second conductive film is made of ITO.

8. The display device according to claim 1, wherein the conductive film having the stacked structure is in contact with a drain.