JP2006191005A5 - - Google Patents
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- JP2006191005A5 JP2006191005A5 JP2005352934A JP2005352934A JP2006191005A5 JP 2006191005 A5 JP2006191005 A5 JP 2006191005A5 JP 2005352934 A JP2005352934 A JP 2005352934A JP 2005352934 A JP2005352934 A JP 2005352934A JP 2006191005 A5 JP2006191005 A5 JP 2006191005A5
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- 125000001424 substituent group Chemical group 0.000 claims 12
- 239000003795 chemical substances by application Substances 0.000 claims 7
- 238000001723 curing Methods 0.000 claims 7
- 239000000178 monomer Substances 0.000 claims 7
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims 6
- 125000003700 epoxy group Chemical group 0.000 claims 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000004593 Epoxy Substances 0.000 claims 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims 4
- 125000005396 acrylic acid ester group Chemical group 0.000 claims 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims 4
- 125000001072 heteroaryl group Chemical group 0.000 claims 4
- 229920000647 polyepoxide Polymers 0.000 claims 4
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 claims 4
- 125000003011 styrenyl group Chemical class [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims 4
- 238000000016 photochemical curing Methods 0.000 claims 3
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical class OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 claims 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 claims 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 claims 2
- 150000008062 acetophenones Chemical class 0.000 claims 2
- FZEYVTFCMJSGMP-UHFFFAOYSA-N acridone Chemical class C1=CC=C2C(=O)C3=CC=CC=C3NC2=C1 FZEYVTFCMJSGMP-UHFFFAOYSA-N 0.000 claims 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims 2
- 150000004982 aromatic amines Chemical group 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 150000008366 benzophenones Chemical class 0.000 claims 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims 2
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 claims 2
- KOMDZQSPRDYARS-UHFFFAOYSA-N cyclopenta-1,3-diene titanium Chemical class [Ti].C1C=CC=C1.C1C=CC=C1 KOMDZQSPRDYARS-UHFFFAOYSA-N 0.000 claims 2
- 230000002950 deficient Effects 0.000 claims 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 claims 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims 2
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical compound C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 claims 2
- 125000005504 styryl group Chemical group 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229930192474 thiophene Natural products 0.000 claims 2
- 150000003852 triazoles Chemical class 0.000 claims 2
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 claims 2
Claims (13)
前記記憶素子は、前記ビット線を構成する第１の導電層と、前記ワード線を構成する第２の導電層と、前記第１の導電層と前記第２の導電層の間に設けられ、光硬化する組成物を含む層と、を有し、
前記組成物を含む層は、モノマー、オリゴマー及び硬化剤を有することを特徴とする記憶装置。 A plurality of memory cells including a memory element; a plurality of bit lines extending in a first direction; and a plurality of word lines extending in a second direction perpendicular to the first direction. ,
The storage element is provided between a first conductive layer constituting the bit line, a second conductive layer constituting the word line, and between the first conductive layer and the second conductive layer, a layer containing a composition for photocuring, was closed,
Layer, the monomer, storage device, characterized by chromatic oligomers and curing agent comprising said composition.
前記記憶素子は、第１の導電層と、第２の導電層と、前記第１の導電層と前記第２の導電層の間に設けられ、光硬化する組成物を含む層と、を有し、
前記組成物を含む層は、モノマー、オリゴマー及び硬化剤を有することを特徴とする記憶装置。 A plurality of memory cells including memory elements and transistors;
The memory element includes a first conductive layer, a second conductive layer, and a layer provided between the first conductive layer and the second conductive layer and containing a photocuring composition. And
Layer, the monomer, storage device, characterized by chromatic oligomers and curing agent comprising said composition.
前記モノマーは、アクリル酸エステル類、スチレン類、エポキシ類、ビニルエーテル類、キャリア輸送性の置換基を含むアクリル酸エステル類、キャリア輸送性の置換基を含むスチレン類、キャリア輸送性の置換基を含むエポキシ類及びキャリア輸送性の置換基を含むビニルエーテル類から選択された少なくとも１つであり、
前記オリゴマーは、アクリロイル基、スチリル基、エポキシ基及びビニルエーテル基から選択された少なくとも１つであり、
前記硬化剤は、アセトフェノン誘導体、ベンゾフェノン誘導体、ベンゾインエーテル誘導体、ベンジルケタール誘導体、アクリドン誘導体、チタノセン誘導体及びホスフィンオキシド誘導体から選択された少なくとも１つであることを特徴とする記憶装置。 In claim 1 or claim 2,
The monomer includes acrylic acid esters, styrenes, epoxies, vinyl ethers, acrylic acid esters containing a carrier transporting substituent, styrenes containing a carrier transporting substituent, and a carrier transporting substituent. At least one selected from epoxies and vinyl ethers containing carrier transportable substituents,
The oligomer is at least one selected from an acryloyl group, a styryl group, an epoxy group, and a vinyl ether group,
The storage device, wherein the curing agent is at least one selected from acetophenone derivatives, benzophenone derivatives, benzoin ether derivatives, benzyl ketal derivatives, acridone derivatives, titanocene derivatives, and phosphine oxide derivatives.
前記キャリア輸送性の置換基は、芳香族アミン、電子過剰型ヘテロ芳香環、縮合芳香環、電子欠如型ヘテロ芳香環又は典型金属キノリノール錯体であることを特徴とする記憶装置。 In claim 4 ,
The storage device, wherein the carrier transporting substituent is an aromatic amine, an electron-rich heteroaromatic ring, a condensed aromatic ring, an electron-deficient heteroaromatic ring, or a typical metal quinolinol complex.
前記キャリア輸送性の置換基は、カルバゾール、トリフェニルアミン、チオフェン、ピロール、アントラセン、ピレン、ペリレン、ナフタレン、ピリジン、フェナントロリン、ビピリジン、イミダゾール、ジアゾ−ル又はトリアゾールであることを特徴とする記憶装置。 In claim 4 ,
The storage device, wherein the carrier transporting substituent is carbazole, triphenylamine, thiophene, pyrrole, anthracene, pyrene, perylene, naphthalene, pyridine, phenanthroline, bipyridine, imidazole, diazole, or triazole.
電磁波を交流の電気信号に変換するアンテナと、
前記アンテナから供給される交流の電気信号を基に電源電位を生成し、前記電源電位を前記メモリセルに供給する電源回路と、を有し、
前記記憶素子は、第１の導電層と、第２の導電層と、前記第１の導電層と前記第２の導電層の間に設けられ、光硬化する組成物を含む層と、を有し、
前記組成物を含む層は、モノマー、オリゴマー及び硬化剤を有することを特徴とする半導体装置。 A plurality of memory cells including a memory element and a transistor;
An antenna that converts electromagnetic waves into alternating electrical signals;
A power supply circuit that generates a power supply potential based on an alternating electrical signal supplied from the antenna and supplies the power supply potential to the memory cell, and
The memory element includes a first conductive layer, a second conductive layer, and a layer provided between the first conductive layer and the second conductive layer and containing a photocuring composition. And
The semiconductor device layer, characterized in that the organic monomers, oligomers and curing agent comprising said composition.
前記第１の導電層と前記第２の導電層の少なくとも一方は、透光性を有することを特徴とする半導体装置。 In claim 7 ,
At least one of the first conductive layer and the second conductive layer has a light-transmitting property.
前記モノマーは、アクリル酸エステル類、スチレン類、エポキシ類、ビニルエーテル類、キャリア輸送性の置換基を含むアクリル酸エステル類、キャリア輸送性の置換基を含むスチレン類、キャリア輸送性の置換基を含むエポキシ類及びキャリア輸送性の置換基を含むビニルエーテル類から選択された少なくとも１つであり、
前記オリゴマーは、アクリロイル基、スチリル基、エポキシ基及びビニルエーテル基から選択された少なくとも１つであり、
前記硬化剤は、アセトフェノン誘導体、ベンゾフェノン誘導体、ベンゾインエーテル誘導体、ベンジルケタール誘導体、アクリドン誘導体、チタノセン誘導体及びホスフィンオキシド誘導体から選択された少なくとも１つであることを特徴とする半導体装置。 In claim 7 ,
The monomer includes acrylic acid esters, styrenes, epoxies, vinyl ethers, acrylic acid esters containing a carrier transporting substituent, styrenes containing a carrier transporting substituent, and a carrier transporting substituent. At least one selected from epoxies and vinyl ethers containing carrier transportable substituents,
The oligomer is at least one selected from an acryloyl group, a styryl group, an epoxy group, and a vinyl ether group,
The semiconductor device, wherein the curing agent is at least one selected from acetophenone derivatives, benzophenone derivatives, benzoin ether derivatives, benzyl ketal derivatives, acridone derivatives, titanocene derivatives, and phosphine oxide derivatives.
前記キャリア輸送性の置換基は、芳香族アミン、電子過剰型ヘテロ芳香環、縮合芳香環、電子欠如型ヘテロ芳香環又は典型金属キノリノール錯体であることを特徴とする半導体装置。 In claim 9 ,
The semiconductor device, wherein the carrier transporting substituent is an aromatic amine, an electron-rich heteroaromatic ring, a condensed aromatic ring, an electron-deficient heteroaromatic ring, or a typical metal quinolinol complex.
前記キャリア輸送性の置換基は、カルバゾール、トリフェニルアミン、チオフェン、ピロール、アントラセン、ピレン、ペリレン、ナフタレン、ピリジン、フェナントロリン、ビピリジン、イミダゾール、ジアゾ−ル又はトリアゾールであることを特徴とする半導体装置。 In claim 9 ,
The semiconductor device, wherein the carrier transporting substituent is carbazole, triphenylamine, thiophene, pyrrole, anthracene, pyrene, perylene, naphthalene, pyridine, phenanthroline, bipyridine, imidazole, diazole, or triazole.
前記第１の導電層に接するように、組成物を含む層を形成し、
前記組成物を含む層が硬化するように、前記組成物を含む層に光を照射し、
前記組成物を含む層に接するように、第２の導電層を形成し、
前記組成物を含む層として、モノマー、オリゴマー及び硬化剤を含む層を形成することを特徴とする記憶装置の作製方法。 Forming a first conductive layer on the substrate;
Forming a layer containing the composition in contact with the first conductive layer;
Irradiating the layer containing the composition with light so that the layer containing the composition is cured;
Forming a second conductive layer so as to be in contact with the layer containing the composition;
A method for manufacturing a memory device, comprising forming a layer containing a monomer, an oligomer, and a curing agent as the layer containing the composition.
前記トランジスタ上に第１の絶縁層を形成し、
前記第１の絶縁層に設けられた開口部を介して、前記トランジスタに電気的に接続された第１の導電層を形成し、
前記第１の導電層に電気的に接続された第２の導電層を形成し、
前記第２の導電層に接するように、組成物を含む層を形成し、
前記組成物を含む層が硬化するように、前記組成物を含む層に光を照射し、
前記組成物を含む層に接するように、第３の導電層を形成し、
前記組成物を含む層として、モノマー、オリゴマー及び硬化剤を含む層を形成することを特徴とする半導体装置の作製方法。 Forming transistors on the substrate,
Forming a first insulating layer on the transistor;
Forming a first conductive layer electrically connected to the transistor through an opening provided in the first insulating layer;
Forming a second conductive layer electrically connected to the first conductive layer;
Forming a layer containing the composition in contact with the second conductive layer;
Irradiating the layer containing the composition with light so that the layer containing the composition is cured;
Forming a third conductive layer so as to be in contact with the layer containing the composition;
A method for manufacturing a semiconductor device, wherein a layer containing a monomer, an oligomer, and a curing agent is formed as the layer containing the composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005352934A JP2006191005A (en) | 2004-12-07 | 2005-12-07 | Memory device and its manufacturing method, and semiconductor device and its manufacturing method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004354452 | 2004-12-07 | ||
| JP2005352934A JP2006191005A (en) | 2004-12-07 | 2005-12-07 | Memory device and its manufacturing method, and semiconductor device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006191005A JP2006191005A (en) | 2006-07-20 |
| JP2006191005A5 true JP2006191005A5 (en) | 2008-11-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005352934A Withdrawn JP2006191005A (en) | 2004-12-07 | 2005-12-07 | Memory device and its manufacturing method, and semiconductor device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006191005A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7692999B2 (en) * | 2006-12-25 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd | Nonvolatile memory and semiconductor device including nonvolatile memory |
| JP5767492B2 (en) * | 2011-03-25 | 2015-08-19 | ホーチキ株式会社 | Wireless communication system, parent device and child device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2908098B2 (en) * | 1991-01-31 | 1999-06-21 | 大日本印刷株式会社 | Information recording medium and information recording / reproducing method |
| JPH06265931A (en) * | 1992-10-26 | 1994-09-22 | Dainippon Printing Co Ltd | System and method for information recording |
| JP2003529223A (en) * | 2000-03-28 | 2003-09-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Integrated circuit with programmable storage element |
| NO321555B1 (en) * | 2004-03-26 | 2006-05-29 | Thin Film Electronics Asa | Organic electronic device and method for making such device |
-
2005
- 2005-12-07 JP JP2005352934A patent/JP2006191005A/en not_active Withdrawn
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