CN106025080A - Ultraviolet/visible/infrared responding wide spectral organic detection device - Google Patents

Ultraviolet/visible/infrared responding wide spectral organic detection device Download PDF

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Publication number
CN106025080A
CN106025080A CN201610547672.3A CN201610547672A CN106025080A CN 106025080 A CN106025080 A CN 106025080A CN 201610547672 A CN201610547672 A CN 201610547672A CN 106025080 A CN106025080 A CN 106025080A
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ultraviolet
light
visible
infrared
buffer layer
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于军胜
王晓
邢珅
钟建
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention discloses an ultraviolet/visible/infrared responding wide spectral organic detection device, which belongs to the field of organic photodetector materials and devices. The device is composed of a transparent substrate, a conductive anode, an anode buffer layer, a light sensitive layer, a cathode buffer layer and a metal cathode. The light sensitive layer formed by mixing an ultraviolet sensitive material with the absorption band between 300 and 400nm, a visible light sensitive material with the absorption band between 400 and 700nm, and an infrared light sensitive material with the absorption band between 700 and 1000nm, wherein the absorption spectrum of three materials are complementary, and the mixing mass percentages are respectively 30% to 35%, 40% to 45% and 20% to 30%. The ultraviolet/visible/infrared responding wide spectral organic detection device provided by the invention is sensitive to light in the wavelength range of 300 to 1000nm, realizes wide-band light detection, and has a wide application prospect in the fields of science, industry, daily life and the like.

Description

A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response
Technical field
The present invention relates to organic optoelectronic field, be specifically related to be respectively adopted ultraviolet-sensitive material, it is seen that light sensitive material and red A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response of outer light sensitive material mixing composition light-sensitive layer.
Background technology
Organic photodetector belongs to electrooptical device, is to utilize have that photoelectric material makes to be capable of opto-electronic conversion Sensor.Traditional photo-detector inorganic semiconductor material is made, its complex manufacturing technology, and cost is high, and is unsuitable for Do broad area device.There is due to organic material the features such as efficient photaesthesia, light weight, inexpensive, processing characteristics excellence, be more easy to Prepare small size, low-power consumption, the sensitive detection parts of low cost, compensate for apparatus expensive, the work generally existed in inorganic photo-detector The deficiencies such as skill is complicated.Miscellaneous organic semiconducting materials also provides the biggest for the development of organic photodetector part and innovation Alternative, synthesizes the new material with corresponding light electrical characteristics as required, and therefore organic photodetector will have bigger grinding Study carefully space and commercial value, such as at astronomy, environmental monitoring, light splitting and medicine detector device etc..
It addition, major part photodetector owing to photoelectric material has specific band gap, there is stronger spectral selection, the most not Same photo-detector has response to the light of different wave length, such as, responds the ultraviolet detector in ultra-violet (UV) band, response at visible ray Visible-light detector, response infrared sensor in ultrared etc..The spectral region that these photo-detectors are suitable for is limited, spectrum Response range is unadjustable, limits its range of application.Such as the detector of image sensing, it is necessary to use each simultaneously Numerous photo-detectors of spectral coverage, cause complex operation, and structure is complicated.Although the spectral region width that inorganic silicon photo-detector is suitable for, But its Preparation equipment is expensive, and typically requires the complex process through multiple tracks highly energy-consuming so that it is use cost is the highest.Therefore, How to provide a kind of responsiveness high, response light spectrum width, preparing simple ultraviolet/visible/infrared broad spectrum detector is that it needs to solve Subject matter.
Summary of the invention
Problem to be solved by this invention is how to provide a kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response, mesh Be by by ultraviolet-sensitive material, it is seen that light sensitive material and infrared light sensitive material mixing composition light-sensitive layer, with realize Wide spectrum organic detectors part to ultraviolet-visible-infrared response.
For solving the problems referred to above, the technical scheme is that
A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response, device architecture includes the transparent substrates set gradually, Conductive anode, anode buffer layer, light-sensitive layer, cathode buffer layer, metallic cathode, light-sensitive layer by absorption bands at 300-400 The ultraviolet-sensitive material of nm, absorption bands at the visible ray sensitive material of 400-700nm and absorption bands at 700-1000nm Infrared light sensitive material mix.
Further, the absorption spectrum of three kinds of mixing materials of light-sensitive layer is complementary, and mass percent consists of: ultraviolet is photosensitive Sense material is 30%～35%, it is seen that light sensitive material is 40%～45%, and infrared light sensitive material is 20%～30%.
Further, in described light-sensitive layer, ultraviolet-sensitive material be Polyvinyl carbazole (PVK), zinc oxide (ZnO), Titanium dioxide (TiO2) or 4,4 ', 4 " one in-three (N-3-methylphenyl-N-phenyl-amino) triphenylamine (m-MTDATA) Or it is multiple.
Further, in described light-sensitive layer, it is seen that light sensitive material is fullerene derivate PC61BM or PC71In BM One or both.
Further, in described light-sensitive layer, infrared light sensitive material be vulcanized lead (PbS), side sour little molecule (SQ), One or more in thiophene-based material or phthalocyanine dye, wherein thiophene-based material is poly-(4,4 '-bis-(2-ethylhexyl) dithieno [3,2-b:2 ', 3 '-d] thiophene is coughed up)-2,6-biphenyl-ALT-(2,1,3-diazosulfide)-4,7-biphenyl (PSBTBT), [2,6-(4,4- Two-(2-ethylhexyl)-4H-cyclopentenes [2,1-b；3,4-b ']-two thiophene)-replace-4,7-(2,1,3-diazosulfide)] copolymer (PCPDTBT) or the copolymer (PTB) of thiophene (3,4-b) bithiophene and benzene 1,4-Dithiapentalene, phthalocyanine dye is chloro sub--2,3-naphthalene phthalocyanine One or more in boron (SubNc), chloro aluminum phthalocyanine (ClAlPc) or naphthalene CuPc (CuNc).
Further, the material of described transparent substrates is glass, transparent polymer flexible material or biodegradable flexible material In any one or more；Wherein, transparent polymer flexible material be polyethylene, polymethyl methacrylate, Merlon, Any one or more in polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic acid.
Further, described conductive anode material is tin indium oxide (ITO), conductive polymer poly 3,4-ethylene dioxythiophene/poly- Appointing in styrene sulfonate (PEDOT:PSS), Graphene (Graphene) or CNT (Carbon Nanotube) Anticipate one or more.
Further, described anode buffer layer material is molybdenum trioxide (MoO3), vanadic anhydride (V2O5), Tungstic anhydride. (WO3)、 N, N '-bis-(3-aminomethyl phenyls)-(1,1 '-biphenyl)-4 '-diamidogen (TPD), 4,4 '-bis-[N-(naphthyl)-N-phenyl-amino] biphenyl (α-NPD), 3,4-ethylene dioxythiophene mixing poly styrene sulfonate (PEDOT:PSS) or polyaniline (PANI) class, anode buffer layer thickness is 10 nm。
Further, described cathode cushioning layer material is cesium carbonate (Cs2CO3), lithium fluoride (LiF), calcium oxide (CaO), 2,9-bis- Methyl-4,7-biphenyl-1,10-phenanthrolene (BCP), 4,7-biphenyl-1,10-phenanthrolene (BPhen), 2-(4-diphenyl)-5-(4- 2-methyl-2-phenylpropane base)-1,3,4-diazole (PBD), 1,3-bis-[(4-tertiary amine-butyl phenyl)-1,3,4-diazo acid-5-yl] benzene (OXD-7) Or 1,3,5-tri-(N-Phenyl-benzoimidazol-2) benzene (TPBi), cathode buffer layer thickness is 10nm.
Further, the material of described metal cathode layer is lithium, magnesium, calcium, strontium, aluminum or indium or their conjunctions golden or silver-colored with copper Gold, metallic cathode thickness is 100nm.
Further, described anode buffer layer, light-sensitive layer, cathode buffer layer gross thickness are less than 500nm.
It is an advantage of the current invention that:
(1) light-sensitive layer involved in the application is by having stronger UV Absorption, it is seen that light absorbs and infrared Absorption Three kinds of material mixing form, and device has high responsiveness and sensitivity to 300-1000nm band of light.
(2) device architecture that the present invention uses is the structure of " sandwich " formula, and all functional layer material use evaporation to become with spin coating Film, device preparation method is simple compared with the preparation method of wide spectral light sensitive detection parts based on inorganic material, and easily operates.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response involved in the present invention；
Fig. 2 is that at ultraviolet light, (wavelength is 300nm to device described in embodiment 2 provided by the present invention, and intensity is 0.6 mW/cm2) irradiate and without the Current density-voltage characteristic curve under the conditions of ultraviolet light irradiation；
Fig. 3 is that at visible ray, (wavelength is 550nm to device described in embodiment 4 provided by the present invention, and intensity is 2mW/cm2) Irradiate and without the response curve under the conditions of radiation of visible light；
Fig. 4 is that at infrared light, (wavelength is 1000nm to device described in embodiment 4 provided by the present invention, and intensity is 15 mW/cm2) irradiate and without the response curve under the conditions of Infrared irradiation；
Detailed description of the invention
The invention will be further described below in conjunction with the accompanying drawings:
The technical scheme is that the wide spectrum organic detectors part of a kind of ultraviolet/visible/infrared response, as it is shown in figure 1, device Structure include 1, transparent substrates, 2, conductive anode, 3, anode buffer layer, 5, light-sensitive layer, 6, cathode buffer layer, 7, Metallic cathode.
Heretofore described backing material is glass or transparent polymer, and described transparent polymer material is polyethylene, poly-methyl-prop E pioic acid methyl ester, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.Described Cathode layer generally uses tin indium oxide (ITO), conductive polymer poly 3,4-ethylenedioxy thiophene/poly styrene sulfonate (PEDOT:PSS), any one or more in Graphene (Graphene), CNT (Carbon Nanotube). Described anode buffer layer material is MoO3、V2O5、WO3, TPD, α-NPD, PEDOT:PSS, PANI, anode buffer Layer thickness is 10nm.Cathode cushioning layer material is Cs2CO3, LiF, CaO, BCP, BPhen, PBD, OXD-7, TPBi, Cathode buffer layer thickness is 10nm.Described metal anode material is one or more in Ag, Al or Cu, and metal anode is thick Degree is 100nm.
The percentage by weight of light-sensitive layer consists of: ultraviolet-sensitive material is 30%～35%, it is seen that light sensitive material is 40%～45%, infrared light sensitive material is 20%～30%.Ultraviolet sensitivity material PVK, ZnO, TiO2, m-MTDATA In one or more.Visible sensitive material is PC61BM or PC71One in BM.Infrared-sensitive material is PbS, SQ, One or more in PSBTBT, PCPDTBT, PTB, SubNc, ClAlPc, CuNc.
The following is the specific embodiment of the present invention:
Embodiment 1:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare PVK:PC61BM:SQ (30%:40%:30%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (130 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer Bphen 10nm, evaporation metal anode A g (100nm) on hole blocking layer. Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1012Jones.Wherein, at-2V Under the conditions of, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 1.5A/W of device, 550nm, 2mW/cm2Can See under light, record responsiveness 3.4A/W of device, 1000nm, 15mW/cm2Under infrared light, record the responsiveness 0.4 of device A/W。
Embodiment 2:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare PVK:PC71BM:SQ (30%:40%:30%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer Bphen 10nm, evaporation metal anode A g (100nm) on hole blocking layer. Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1013Jones.Wherein, at-2V Under the conditions of, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 1.9A/W of device, 550nm, 2mW/cm2Can See under light, record responsiveness 4.5A/W of device, 1000nm, 15mW/cm2Under infrared light, record the responsiveness 1.4 of device A/W。
Embodiment 3:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode ITO surface evaporation MoO3Prepare anode buffer layer, and carry out the thin film formed toasting (150 DEG C, 30min)； Anode buffer layer use spin coating prepare ZnO:PC61BM:PbS (30%:45%:25%) light-sensitive layer (1000rpm, 200 And carry out toasting (100 DEG C, 15min) nm),；Cathode buffer layer BCP 10nm is prepared at light-sensitive layer surface evaporation, Evaporation metal anode A g (100nm) on hole blocking layer.Under standard test condition: 300-1000nm wave band is had by device Response, detector is～1011Jones.Wherein, under the conditions of-2V, 350nm, 0.6mW/cm2Under ultraviolet light, record device Responsiveness 0.8A/W of part, 550nm, 2mW/cm2Under visible ray, record responsiveness 2.5A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 1.1A/W of device.
Embodiment 4:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode ITO surface evaporation MoO3Prepare anode buffer layer, and carry out the thin film formed toasting (150 DEG C, 30min)； Anode buffer layer use spin coating prepare ZnO:PC71BM:PbS (30%:42%:28%) light-sensitive layer (1000rpm, 200 And carry out toasting (100 DEG C, 15min) nm),；Cathode buffer layer BCP 10nm is prepared at light-sensitive layer surface evaporation, Evaporation metal anode A g (100nm) on hole blocking layer.Under standard test condition: 300-1000nm wave band is had by device Response, detectivity is～1011Jones.Wherein, under the conditions of-2V, 350nm, 0.6mW/cm2Under ultraviolet light, record device Responsiveness 0.9A/W of part, 550nm, 2mW/cm2Under visible ray, record responsiveness 1.3A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 0.7A/W of device.
Embodiment 5:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode ITO surface evaporation MoO3Prepare anode buffer layer, and carry out the thin film formed toasting (150 DEG C, 30min)； On anode buffer layer use spin coating prepare ZnO:PC61BM:PCPDTBT (35%:45%:20%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Cathode buffer layer BCP 10nm is prepared at light-sensitive layer surface evaporation, Evaporation metal anode A g (100nm) on hole blocking layer.Under standard test condition: device is to 300-1000nm wave band Having response, detectivity is～1012Jones.Wherein, under the conditions of-2V, 350nm, 0.6mW/cm2Under ultraviolet light, record Responsiveness 3.2A/W of device, 550nm, 2mW/cm2Under visible ray, record responsiveness 7.5A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 3.7A/W of device.
Embodiment 6:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode ITO surface evaporation MoO3Prepare anode buffer layer, and carry out the thin film formed toasting (150 DEG C, 30min)； On anode buffer layer use spin coating prepare ZnO:PC71BM:PCPDTBT (35%:40%:25%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Cathode buffer layer BCP 10nm is prepared at light-sensitive layer surface evaporation, Evaporation metal anode A g (100nm) on hole blocking layer.Under standard test condition: device is to 300-1000nm wave band Having response, detectivity is～1013Jones.Wherein, under the conditions of-2V, 350nm, 0.6mW/cm2Under ultraviolet light, record Responsiveness 3.4A/W of device, 550nm, 2mW/cm2Under visible ray, record responsiveness 5.5A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 3.9A/W of device.
Embodiment 7:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode ITO surface evaporation MoO3Prepare anode buffer layer, and carry out the thin film formed toasting (150 DEG C, 30min)； Anode buffer layer use spin coating prepare PVK:PC61BM:PCPDTBT (35%:42%:23%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Cathode buffer layer BCP 10nm is prepared at light-sensitive layer surface evaporation, Evaporation metal anode A g (100nm) on hole blocking layer.Under standard test condition: device is to 300-1000nm wave band Having response, detectivity is～1013Jones.Wherein, under the conditions of-2V, 350nm, 0.6mW/cm2Under ultraviolet light, record Responsiveness 3.9A/W of device, 550nm, 2mW/cm2Under visible ray, record responsiveness 7.8A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 3.3A/W of device.
Embodiment 8:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode ITO surface evaporation MoO3Prepare anode buffer layer, and carry out the thin film formed toasting (150 DEG C, 30min)； Anode buffer layer use spin coating prepare PVK:PC71BM:PCPDTBT (32%:40%:28%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Cathode buffer layer BCP 10nm is prepared at light-sensitive layer surface evaporation, Evaporation metal anode A g (100nm) on hole blocking layer.Under standard test condition: device is to 300-1000nm wave band Having response, detectivity is～1013Jones.Wherein, under the conditions of-2V, 350nm, 0.6mW/cm2Under ultraviolet light, record Responsiveness 3.2A/W of device, 550nm, 2mW/cm2Under visible ray, record responsiveness 5.8A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 3.4A/W of device.
Embodiment 9:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare PVK:PC61BM:SubNc (32%:45%:23%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer TPBi 10nm, evaporation metal anode A g (100nm) on hole blocking layer.? Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1013Jones.Wherein, at-2V bar Under part, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 1.8A/W of device, 550nm, 2mW/cm2Visible Under light, record responsiveness 6.7A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 4.9A/W of device.
Embodiment 10:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare PVK:PC71BM:SubNc (33%:43%:24%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer TPBi 10nm, evaporation metal anode A g (100nm) on hole blocking layer.? Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1013Jones.Wherein, at-2V bar Under part, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 1.9A/W of device, 550nm, 2mW/cm2Visible Under light, record responsiveness 6.4A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 5.3A/W. of device
Embodiment 11:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare ZnO:PC61BM:SubNc (33%:45%:22%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer TPBi 10nm, evaporation metal anode A g (100nm) on hole blocking layer.? Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1013Jones.Wherein, at-2V bar Under part, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 5.8A/W of device, 550nm, 2mW/cm2Visible Under light, record responsiveness 9.3A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 1.6A/W of device
Embodiment 12:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare ZnO:PC71BM:SubNc (33%:40%:27%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer TPBi 10nm, evaporation metal anode A g (100nm) on hole blocking layer.? Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1013Jones.Wherein, at-2V bar Under part, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 3.8A/W of device, 550nm, 2mW/cm2Visible Under light, record responsiveness 5.3A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 2.6A/W of device.
Embodiment 13:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare TiO2:PC61BM:SubNc (35%:45%:20%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer TPBi 10nm, evaporation metal anode A g (100nm) on hole blocking layer.? Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1013Jones.Wherein, at-2V bar Under part, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 3.3A/W of device, 550nm, 2mW/cm2Visible Under light, record responsiveness 5.5A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 5.6A/W of device.
Embodiment 14:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare TiO2:PC71BM:SubNc (35%:40%:25%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer TPBi 10nm, evaporation metal anode A g (100nm) on hole blocking layer.? Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1013Jones.Wherein, at-2V bar Under part, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 3.2A/W of device, 550nm, 2mW/cm2Visible Under light, record responsiveness 8.3A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 1.1A/W of device.
Embodiment 15:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare TiO2:PC71BM:PbS (31%:41%:28%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer TPBi 10nm, evaporation metal anode A g (100nm) on hole blocking layer.? Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1013Jones.Wherein, at-2V bar Under part, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 3.5A/W of device, 550nm, 2mW/cm2Visible Under light, record responsiveness 1.3A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 6.6A/W of device.
Embodiment 16:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare TiO2:PC71BM:SQ (34%:44%:22%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer TPBi 10nm, evaporation metal anode A g (100nm) on hole blocking layer.? Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1013Jones.Wherein, at-2V bar Under part, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 1.8A/W of device, 550nm, 2mW/cm2Visible Under light, record responsiveness 2.2A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 2.4A/W of device.
Embodiment 17:
The substrate being made up of substrate and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；At electrically conducting transparent Anode buffer layer is prepared on anode ITO surface rotary coating PEDOT:PSS (2000rpm, 10nm), and thin by formed Film carries out toasting (150 DEG C, 30min)；Anode buffer layer use spin coating prepare m-MTDATA:PC71BM:PbS (35%:43%:22%) light-sensitive layer (1000rpm, 200nm), and carry out toasting (100 DEG C, 15min)；Photosensitive Sense layer surface evaporation prepares cathode buffer layer TPBi 10nm, evaporation metal anode A g (100nm) on hole blocking layer.? Under standard test condition: device has response to 300-1000nm wave band, detectivity is～1013Jones.Wherein, at-2V bar Under part, 350nm, 0.6mW/cm2Under ultraviolet light, record responsiveness 0.8A/W of device, 550nm, 2mW/cm2Visible Under light, record responsiveness 1.3A/W of device, 1000nm, 15mW/cm2Under infrared light, record responsiveness 0.6A/W of device.

Claims (10)

1. the wide spectrum organic detectors part to ultraviolet/visible/infrared response, device architecture includes the transparent lining set gradually The end, conductive anode, anode buffer layer, light-sensitive layer, cathode buffer layer, metallic cathode, it is characterised in that light-sensitive layer by Absorption bands is at the ultraviolet-sensitive material of 300-400nm, and absorption bands is in the visible ray sensitive material of 400-700nm and suction Receive wave band to mix at the infrared light sensitive material of 700-1000nm.
A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response the most according to claim 1, its feature exists In, the absorption spectrum of three kinds of mixing materials of light-sensitive layer is complementary, and mass percent consists of: ultraviolet-sensitive material is 30%～35%, it is seen that light sensitive material is 40%～45%, infrared light sensitive material is 20%～30%.
A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response the most according to claim 1, its feature exists In, in described light-sensitive layer, ultraviolet-sensitive material is Polyvinyl carbazole (PVK), zinc oxide (ZnO), titanium dioxide Titanium (TiO2) or 4,4 ', 4 " one or more in-three (N-3-methylphenyl-N-phenyl-amino) triphenylamine (m-MTDATA).
A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response the most according to claim 1, its feature exists In, in described light-sensitive layer, it is seen that light sensitive material is fullerene derivate PC61BM or PC71One or both in BM.
A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response the most according to claim 1, its feature exists In, in described light-sensitive layer, infrared light sensitive material is vulcanized lead (PbS), side sour little molecule (SQ), thiophene-based material Or one or more in phthalocyanine dye, wherein thiophene-based material is poly-(4,4 '-bis-(2-ethylhexyl) dithieno [3,2-b:2 ', 3 '-d] Thiophene is coughed up)-2,6-biphenyl-ALT-(2,1,3-diazosulfide)-4,7-biphenyl (PSBTBT), [2,6-(4,4-bis--(2-ethylhexyl)-4H- Cyclopentenes [2,1-b；3,4-b ']-two thiophene)-alternately-4,7-(2,1,3-diazosulfide)] copolymer (PCPDTBT) or thiophene (3,4-b) and The copolymer (PTB) of thiophene and benzene 1,4-Dithiapentalene, phthalocyanine dye is chloro sub--2,3-naphthalene phthalocyanine boron (SubNc), chloro aluminum phthalocyanine (ClAlPc) one or more or in naphthalene CuPc (CuNc).
A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response the most according to claim 1, its feature exists It is any one in glass, transparent polymer flexible material or biodegradable flexible material in, the material of described transparent substrates Plant or multiple；Wherein, transparent polymer flexible material is polyethylene, polymethyl methacrylate, Merlon, poly-amino first Any one or more in acid esters, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic acid.
A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response the most according to claim 1, its feature exists In, described conductive anode material is tin indium oxide (ITO), conductive polymer poly 3,4-ethylene dioxythiophene/polystyrolsulfon acid In salt (PEDOT:PSS), Graphene (Graphene) or CNT (Carbon Nanotube) any one or many Kind.
A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response the most according to claim 1, its feature exists In, described anode buffer layer material is molybdenum trioxide (MoO3), vanadic anhydride (V2O5), Tungstic anhydride. (WO3), N, N '-bis- (3-aminomethyl phenyl)-(1,1 '-biphenyl)-4 '-diamidogen (TPD), 4,4 '-bis-[N-(naphthyl)-N-phenyl-amino] biphenyl (α-NPD), 3,4-second Support dioxy thiophene mixing poly styrene sulfonate (PEDOT:PSS) or polyaniline (PANI) class, anode buffer layer thickness is 10nm.
A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response the most according to claim 1, its feature exists In, described cathode cushioning layer material is cesium carbonate (Cs2CO3), lithium fluoride (LiF), calcium oxide (CaO), 2,9-dimethyl-4,7-connection Benzene-1,10-phenanthrolene (BCP), 4,7-biphenyl-1,10-phenanthrolene (BPhen), 2-(4-diphenyl)-5-(4-2-methyl-2-phenylpropane Base)-1,3,4-diazole (PBD), 1,3-bis-[(4-tertiary amine-butyl phenyl)-1,3,4-diazo acid-5-yl] benzene (OXD-7) or 1,3,5-tri-(N-Phenyl-benzoimidazol-2) benzene (TPBi), cathode buffer layer thickness is 10nm.
A kind of wide spectrum organic detectors part to ultraviolet/visible/infrared response the most according to claim 1, its feature exists In, the material of described metal cathode layer is lithium, magnesium, calcium, strontium, aluminum or indium or their alloys golden or silver-colored with copper, and metal is cloudy Pole thickness is 100nm.
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CN107331776B (en) * 2017-07-18 2019-12-06 电子科技大学 Novel organic near-infrared photoelectric detector based on charge transfer compound
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CN108695436A (en) * 2018-06-25 2018-10-23 电子科技大学 A kind of organic detectors part of double spectral responses
CN109346613A (en) * 2018-10-11 2019-02-15 电子科技大学 Differential temperature preheats spin coating proceeding and the organic photodetector based on technique preparation
CN109888099A (en) * 2018-12-11 2019-06-14 西安理工大学 High specific detecivity organic photodetector of quaternary wide spectrum and preparation method thereof
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