JP2006147704A - Cooling device of semiconductor element - Google Patents

Cooling device of semiconductor element Download PDF

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JP2006147704A
JP2006147704A JP2004333300A JP2004333300A JP2006147704A JP 2006147704 A JP2006147704 A JP 2006147704A JP 2004333300 A JP2004333300 A JP 2004333300A JP 2004333300 A JP2004333300 A JP 2004333300A JP 2006147704 A JP2006147704 A JP 2006147704A
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semiconductor element
cavity
refrigerant
cooling
cooling plate
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Japanese (ja)
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Akira Ikeda
明 池田
Masao Nakano
雅夫 中野
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2004333300A priority Critical patent/JP2006147704A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cooling device which can cool a semiconductor element of high exothermic density efficiently. <P>SOLUTION: A cavity 1a which cooling medium passes is formed in the interior of a cooling plate 1 for constituting a refrigerating cycle, and the wall 8 which the semiconductor element 7 touches of the ambient wall of the cavity 1a is thinned. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、高発熱の半導体素子を冷媒を用いて効率良く冷却する冷却装置に関する。   The present invention relates to a cooling device that efficiently cools a highly heat-generating semiconductor element using a refrigerant.

図５は、ノートパソコン等に使用されＣＰＵ等の発熱体を冷却する従来の冷却装置に設けられた冷却板２０を示しており、内部にキャビティ２２ａが形成された筐体２２と、筐体２２の上面に取り付けられ筐体２２の開口部を封止する蓋体２４とを備え、筐体２２の対向する二つの側面には冷媒吸入管２６と冷媒吐出管２８とが接続されている。冷却板２０は発熱体の上面に伝熱パッドを介して取り付けられる（例えば、特許文献１参照。）。   FIG. 5 shows a cooling plate 20 provided in a conventional cooling device that is used in a notebook computer or the like and cools a heating element such as a CPU. The casing 22 has a cavity 22 a formed therein, and the casing 22. And a cover body 24 that seals the opening of the housing 22. A refrigerant suction pipe 26 and a refrigerant discharge pipe 28 are connected to two opposite side surfaces of the housing 22. The cooling plate 20 is attached to the upper surface of the heating element via a heat transfer pad (see, for example, Patent Document 1).

特開２００２−３１４２７９号公報JP 2002-314279 A

上述した特許文献１に記載の冷却板２０にあっては、その内部に単純な形状のキャビティを形成しただけの構成で、高発熱密度の半導体素子を冷却するには冷却性能的に限界に近づいてきており、まだまだ改善の余地があった。   In the cooling plate 20 described in Patent Document 1 described above, the cooling performance is approaching the limit in order to cool a semiconductor element having a high heat generation density by simply forming a cavity with a simple shape inside. There is still room for improvement.

本発明は、従来技術の有するこのような問題点に鑑みてなされたものであり、高発熱密度の半導体素子を効率良く冷却できる冷却装置を提供することを目的としている。   The present invention has been made in view of such problems of the prior art, and an object of the present invention is to provide a cooling device capable of efficiently cooling a semiconductor element having a high heat generation density.

上記目的を達成するために、本発明のうちで請求項１に記載の発明は、半導体素子を冷却するための冷却板と、熱交換器と、冷媒ポンプとを冷媒配管により接続して冷媒循環式の冷媒サイクルを構成するとともに、前記冷却板の内部に冷媒が通過するキャビティを形成し、該キャビティの周囲壁のうち、前記半導体素子が接触している壁部を薄肉化したことを特徴とする。   In order to achieve the above object, the invention according to claim 1 of the present invention is a refrigerant circulation in which a cooling plate for cooling a semiconductor element, a heat exchanger, and a refrigerant pump are connected by a refrigerant pipe. And a cavity through which the refrigerant passes is formed inside the cooling plate, and a wall portion of the peripheral wall of the cavity that is in contact with the semiconductor element is thinned. To do.

また、請求項２に記載の発明は、冷媒流れに直交する方向の前記キャビティの断面積を略一定に形成したことを特徴とする。   The invention according to claim 2 is characterized in that the cross-sectional area of the cavity in a direction orthogonal to the refrigerant flow is formed substantially constant.

さらに、請求項３に記載の発明は、前記キャビティの周囲壁のうち、少なくとも前記半導体素子の取付面側の壁面を前記半導体素子に向かって凸状に形成したことを特徴とする。   Further, the invention described in claim 3 is characterized in that, of the peripheral walls of the cavity, at least the wall surface on the mounting surface side of the semiconductor element is formed in a convex shape toward the semiconductor element.

また、請求項４に記載の発明は、前記キャビティの周囲壁のうち、対向する二つの壁面を平坦で互いに平行に形成するとともに、該二つの壁面の一方に近接する前記冷却板の外面に凹部を形成し、該凹部に前記半導体素子を収容したことを特徴とする。   According to a fourth aspect of the present invention, two opposing wall surfaces of the peripheral walls of the cavity are formed flat and parallel to each other, and a recess is formed on the outer surface of the cooling plate adjacent to one of the two wall surfaces. And the semiconductor element is accommodated in the recess.

本発明は、以上説明したように構成されているので、以下に記載されるような効果を奏する。
冷却板の内部に形成されたキャビティの周囲壁のうち、半導体素子が接触している壁部を薄肉化したので、発熱体である半導体素子の冷却性能が向上するとともに、冷却板の強度低下を抑えることができる。 Since the present invention is configured as described above, the following effects can be obtained.
Among the peripheral walls of the cavity formed inside the cooling plate, the wall part where the semiconductor element is in contact is thinned, so that the cooling performance of the semiconductor element as a heating element is improved and the strength of the cooling plate is reduced. Can be suppressed.

また、冷媒流れに直交する方向のキャビティの断面積を略一定に形成するようにしたので、冷媒の速度を略一定に維持して蒸発面で発生した泡状冷媒を速やかに取り去ることができ、より効率的に半導体素子を冷却することができる。   In addition, since the cross-sectional area of the cavity in the direction orthogonal to the refrigerant flow is formed to be substantially constant, it is possible to quickly remove the bubble-like refrigerant generated on the evaporation surface while maintaining the refrigerant speed substantially constant, The semiconductor element can be cooled more efficiently.

以下、本発明の実施の形態について、図面を参照しながら説明する。
実施の形態１．
図１は、本発明にかかる半導体素子の冷却装置の冷凍サイクル図を示している。
図１に示されるように、本発明にかかる冷却装置は、高発熱体である半導体素子（図２参照）を冷却するための冷却板１と、コンデンサとしての熱交換器２と、冷媒ポンプ３とを備えており、冷却板１、コンデンサ２及び冷媒ポンプ３を冷媒配管５，６で接続して冷媒循環式の冷凍サイクルを構成している。また、コンデンサ２は、隣接配置されたファン４により冷却され、冷凍サイクル内には冷媒が封入されている。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Embodiment 1 FIG.
FIG. 1 shows a refrigeration cycle diagram of a semiconductor device cooling apparatus according to the present invention.
As shown in FIG. 1, a cooling device according to the present invention includes a cooling plate 1 for cooling a semiconductor element (see FIG. 2) that is a high heating element, a heat exchanger 2 as a condenser, and a refrigerant pump 3. The refrigerant plate 5, the condenser 2 and the refrigerant pump 3 are connected by refrigerant pipes 5 and 6 to constitute a refrigerant circulation type refrigeration cycle. Further, the condenser 2 is cooled by a fan 4 disposed adjacent to the condenser 2, and a refrigerant is sealed in the refrigeration cycle.

上記構成において、コンデンサ２より出てきた液冷媒は、冷媒ポンプ３により吸入管５を通って冷却板１に送られて高発熱の半導体素子の熱を奪い、冷却板１の中で液冷媒から蒸気冷媒に相変化を起こす。蒸気冷媒は、次に吐出管６を通ってコンデンサ２に送られ、ファン４により冷却されることで蒸気冷媒から液冷媒に相変化を起こす。   In the above configuration, the liquid refrigerant coming out of the condenser 2 is sent to the cooling plate 1 through the suction pipe 5 by the refrigerant pump 3 to take heat of the highly heat-generating semiconductor element, and from the liquid refrigerant in the cooling plate 1. Causes a phase change in the vapor refrigerant. The vapor refrigerant is then sent to the condenser 2 through the discharge pipe 6 and cooled by the fan 4 to cause a phase change from the vapor refrigerant to the liquid refrigerant.

図２は、本発明の実施の形態１における冷却板１内の詳細図である。
図２に示されるように、冷却板１は直方体の形状を呈し、その内部にはキャビティ１ａが形成されており、高発熱の半導体素子７は、冷却板１の底面に接触した状態で取り付けられる。キャビティ１ａは、冷却板１の上面に略平行な上壁１ｂと、上壁１ｂに略直交する四つの側壁１ｃと、底壁とを備えており、底壁は、各側壁１ｃから冷却板１の底面に向かって傾斜した傾斜壁部１ｄと、傾斜壁部１ｄの下縁につながり冷却板１の底面に略平行な中央壁部１ｅとを有し、中央壁部１ｅは半導体素子７の対向面と略同一の形状を呈している。 FIG. 2 is a detailed view of the inside of the cooling plate 1 according to Embodiment 1 of the present invention.
As shown in FIG. 2, the cooling plate 1 has a rectangular parallelepiped shape, and a cavity 1 a is formed therein, and the high-heat-generating semiconductor element 7 is attached in contact with the bottom surface of the cooling plate 1. . The cavity 1a includes an upper wall 1b that is substantially parallel to the upper surface of the cooling plate 1, four side walls 1c that are substantially orthogonal to the upper wall 1b, and a bottom wall. The bottom wall extends from each side wall 1c to the cooling plate 1. And the central wall 1e connected to the lower edge of the inclined wall 1d and substantially parallel to the bottom of the cooling plate 1. The central wall 1e is opposed to the semiconductor element 7. It has almost the same shape as the surface.

また、側壁１ｃは冷却板１の上面及び底面間の略中央に位置していることから、冷却板１の底面とキャビティ１ａの底壁の中央壁部１ｅとの間には薄肉部８が形成されている。   Moreover, since the side wall 1c is located at the approximate center between the upper surface and the bottom surface of the cooling plate 1, a thin portion 8 is formed between the bottom surface of the cooling plate 1 and the central wall portion 1e of the bottom wall of the cavity 1a. Has been.

本実施の形態においては、キャビティ１ａの底壁を半導体素子取付面に向かって凸状に形成して半導体素子７に対向する冷却板１の底部を薄肉化したことで、冷媒が半導体素子７の近傍を通過して半導体素子７を冷却するので、冷却性能を向上させることができる。   In the present embodiment, the bottom wall of the cavity 1 a is formed convex toward the semiconductor element mounting surface, and the bottom of the cooling plate 1 facing the semiconductor element 7 is thinned, so that the refrigerant Since the semiconductor element 7 is cooled by passing through the vicinity, the cooling performance can be improved.

実施の形態２．
図３は、本発明の実施の形態２にかかる半導体素子の冷却装置における冷却板１内の詳細図である。 Embodiment 2. FIG.
FIG. 3 is a detailed view of the inside of the cooling plate 1 in the semiconductor device cooling apparatus according to the second embodiment of the present invention.

本実施の形態における冷却板１は、キャビティ１ａの上壁が底壁１ｄ，１ｅと同一形状を呈し、互いに平行に形成した点において、上述した実施の形態１と相違している。   The cooling plate 1 according to the present embodiment is different from the above-described first embodiment in that the upper wall of the cavity 1a has the same shape as the bottom walls 1d and 1e and is formed in parallel with each other.

すなわち、図３に示されるように、キャビティ１ａの上壁も、傾斜壁部１ｆと中央壁部１ｇとにより構成されており、上下の傾斜壁部１ｄ，１ｆ及び上下の中央壁部１ｅ，１ｇはそれぞれ互いに平行に形成され、冷却板１内における冷媒流れに直交する方向のキャビティ１ａの断面積が略一定となるように設定している。   That is, as shown in FIG. 3, the upper wall of the cavity 1a is also composed of the inclined wall portion 1f and the central wall portion 1g, and the upper and lower inclined wall portions 1d and 1f and the upper and lower central wall portions 1e and 1g. Are formed in parallel to each other, and are set so that the cross-sectional area of the cavity 1a in the direction perpendicular to the refrigerant flow in the cooling plate 1 is substantially constant.

この構成によれば、蒸発面で気化した冷媒を速やかに下流へ流すことができ、冷却性能を向上させることができる。   According to this configuration, the refrigerant evaporated on the evaporation surface can be quickly flowed downstream, and the cooling performance can be improved.

実施の形態３．
図４は、本発明の実施の形態３にかかる半導体素子の冷却装置における冷却板１内の詳細図である。 Embodiment 3 FIG.
FIG. 4 is a detailed view of the inside of the cooling plate 1 in the semiconductor element cooling apparatus according to the third embodiment of the present invention.

本実施の形態においては、キャビティ１ａの上壁１ｂ及び底壁１ｈを平坦で互いに平行に形成して、冷却板１内における冷媒流れに直交する方向のキャビティ１ａの断面積が略一定となるように設定するとともに、冷却板１の底面に半導体素子７と略同一形状の凹部９を形成し、この凹部９に半導体素子７を収容している。凹部９の半導体素子取付面とキャビティ１ａの底壁１ｈとの間には薄肉部８が形成されている   In the present embodiment, the upper wall 1b and the bottom wall 1h of the cavity 1a are formed flat and parallel to each other so that the cross-sectional area of the cavity 1a in the direction perpendicular to the refrigerant flow in the cooling plate 1 is substantially constant. In addition, a recess 9 having substantially the same shape as the semiconductor element 7 is formed on the bottom surface of the cooling plate 1, and the semiconductor element 7 is accommodated in the recess 9. A thin portion 8 is formed between the semiconductor element mounting surface of the recess 9 and the bottom wall 1h of the cavity 1a.

この構成によれば、冷却板１の強度を確保しながら半導体素子７から冷却板内部の蒸発面までの距離を短縮できて冷却性能を向上させることができる。   According to this configuration, it is possible to shorten the distance from the semiconductor element 7 to the evaporation surface inside the cooling plate while ensuring the strength of the cooling plate 1 and to improve the cooling performance.

本発明にかかる半導体素子の冷却装置は、高発熱密度の半導体素子を効率よく冷却することができるので、サーバーのＣＰＵ、パワー系デバイス素子等の冷却装置として有用である。   The semiconductor element cooling apparatus according to the present invention can efficiently cool a semiconductor element having a high heat generation density, and thus is useful as a cooling apparatus for server CPUs, power system device elements, and the like.

本発明にかかる半導体素子の冷却装置の冷凍サイクル図である。It is a refrigerating cycle figure of the cooling device of the semiconductor device concerning the present invention. 本発明の実施の形態１における冷却板を示しており、（ａ）は縦断面図であり、（ｂ）は（ａ）の線IIｂ−IIｂに沿った断面図である。The cooling plate in Embodiment 1 of this invention is shown, (a) is a longitudinal cross-sectional view, (b) is sectional drawing along line IIb-IIb of (a). 本発明の実施の形態２における冷却板を示しており、（ａ）は縦断面図であり、（ｂ）は（ａ）の線IIIｂ−IIIｂに沿った断面図である。The cooling plate in Embodiment 2 of this invention is shown, (a) is a longitudinal cross-sectional view, (b) is sectional drawing along line IIIb-IIIb of (a). 本発明の実施の形態３における冷却板を示しており、（ａ）は縦断面図であり、（ｂ）は（ａ）の線IVｂ−IVｂに沿った断面図である。The cooling plate in Embodiment 3 of this invention is shown, (a) is a longitudinal cross-sectional view, (b) is sectional drawing along line IVb-IVb of (a). 従来の半導体冷却装置の冷却板の分解斜視図である。It is a disassembled perspective view of the cooling plate of the conventional semiconductor cooling device.

符号の説明Explanation of symbols

１ 冷却板、 １ａ キャビティ、 １ｂ 上壁、 １ｃ 側壁、 １ｄ 傾斜壁部、
１ｅ 中央壁部、 １ｆ 傾斜壁部、 １ｇ 中央壁部、 １ｈ 底壁、
２ コンデンサ、 ３ 冷媒ポンプ、 ４ ファン、 ５ 吸入管、 ６ 吐出管、
７ 半導体素子、 ８ 薄肉部、 ９ 凹部。
1 cold plate, 1a cavity, 1b upper wall, 1c side wall, 1d inclined wall,
1e central wall, 1f inclined wall, 1g central wall, 1h bottom wall,
2 condenser, 3 refrigerant pump, 4 fan, 5 suction pipe, 6 discharge pipe,
7 Semiconductor element, 8 Thin part, 9 Concave part.

Claims (4)

半導体素子を冷却するための冷却板と、熱交換器と、冷媒ポンプとを冷媒配管により接続して冷媒循環式の冷媒サイクルを構成するとともに、前記冷却板の内部に冷媒が通過するキャビティを形成し、該キャビティの周囲壁のうち、前記半導体素子が接触している壁部を薄肉化したことを特徴とする半導体素子の冷却装置。 A cooling plate for cooling the semiconductor element, a heat exchanger, and a refrigerant pump are connected by refrigerant piping to form a refrigerant circulation type refrigerant cycle, and a cavity through which the refrigerant passes is formed inside the cooling plate And the cooling device of the semiconductor element characterized by thinning the wall part which the said semiconductor element is contacting among the surrounding walls of this cavity. 冷媒流れに直交する方向の前記キャビティの断面積を略一定に形成したことを特徴とする請求項１に記載の半導体素子の冷却装置。 2. The semiconductor element cooling device according to claim 1, wherein a cross-sectional area of the cavity in a direction perpendicular to the refrigerant flow is formed to be substantially constant. 前記キャビティの周囲壁のうち、少なくとも前記半導体素子の取付面側の壁面を前記半導体素子に向かって凸状に形成したことを特徴とする請求項１あるいは２に記載の半導体素子の冷却装置。 3. The semiconductor element cooling device according to claim 1, wherein, of the peripheral walls of the cavity, at least a wall surface on a mounting surface side of the semiconductor element is formed in a convex shape toward the semiconductor element. 前記キャビティの周囲壁のうち、対向する二つの壁面を平坦で互いに平行に形成するとともに、該二つの壁面の一方に近接する前記冷却板の外面に凹部を形成し、該凹部に前記半導体素子を収容したことを特徴とする請求項１あるいは２に記載の半導体素子の冷却装置。
Of the peripheral walls of the cavity, two opposing wall surfaces are formed flat and parallel to each other, a recess is formed on the outer surface of the cooling plate adjacent to one of the two wall surfaces, and the semiconductor element is formed in the recess. The semiconductor device cooling device according to claim 1, wherein the semiconductor device cooling device is housed.
JP2004333300A 2004-11-17 2004-11-17 Cooling device of semiconductor element Pending JP2006147704A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088127A (en) * 2007-09-28 2009-04-23 Panasonic Corp Cooling apparatus
JP2012026721A (en) * 2011-10-11 2012-02-09 Panasonic Corp Cooling device
US9074825B2 (en) 2007-09-28 2015-07-07 Panasonic Intellectual Property Management Co., Ltd. Heatsink apparatus and electronic device having the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088127A (en) * 2007-09-28 2009-04-23 Panasonic Corp Cooling apparatus
US9074825B2 (en) 2007-09-28 2015-07-07 Panasonic Intellectual Property Management Co., Ltd. Heatsink apparatus and electronic device having the same
JP2012026721A (en) * 2011-10-11 2012-02-09 Panasonic Corp Cooling device

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