JP2006139850A - Reproducing head, composite type thin-film magnetic head, and disk device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent crosstalk between adjacent tracks on a storage medium by controlling the magnetic domain of a magnetoresistive effect element by a hard film or the like so as to deal with the higher recording density of a disk device or the like, regarding the reproducing head of a magnetoresistive effect type for reproducing information from the storage medium by the magnetoresistive effect element, a composite type thin-film magnetic head where the reproducing head and an inductive recording head are integrated, and a disk device having the composite type thin-film magnetic head. <P>SOLUTION: In the reproducing head 10 provided with a magnetoresistive effect element 1 and first and second electrode terminals 2-1 and 2-2 formed to sandwich the magnetoresistive effect element 1 to reproduce information in an arbitrary storage area of a storage medium by using a change in the resistance value of the magnetoresistive effect element 1, lamination parts 6 including high coercive force films 5 and soft magnetic films 4 are formed in both ends of the width direction of the magnetoresistive effect element 1 to apply a certain bias magnetic field to the magneto-resistance effect element 1 beforehand. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a magnetoresistive effect type reproducing head for reproducing information (data) in a storage medium such as a disk as a magnetic signal by utilizing a phenomenon in which the resistance value of the magnetoresistive effect element is changed by an external magnetic field, and a storage A composite thin film magnetic head having a structure in which an inductive recording head for recording information on a medium and the reproducing head are integrated, and information at an arbitrary position on the disk using the composite thin film magnetic head And a disk device (for example, a magnetic disk device) that performs control for reading information written at an arbitrary position.

  In recent years, two types of magnetic layers stacked via a nonmagnetic layer (or a low resistance layer) (for example, a pinned layer in which the direction of magnetization is fixed, and the direction of magnetization can be changed by an external magnetic field. A magnetoresistive effect type magnetic head (hereinafter referred to as MR head (Magnetoresistive Head)) using a magnetoresistive effect element (hereinafter also abbreviated as MR (Magnetoresistance Effect) element) having a magnetoresistive effect having a free layer). However, it tends to be used as a reproducing head of a magnetic storage device such as a disk device. This magnetoresistive effect reproducing head has higher sensitivity than the induction type magnetic head, and the output of the reproduction signal does not depend on the relative speed between the recording medium such as a disk and the magnetic head, and the thin film IC ( The magnetic head can be easily manufactured by a fine element processing technique such as an integrated circuit), and thus is a magnetic head advantageous for increasing the recording density and size of the magnetic storage device. Actually, a composite thin film magnetic head having a structure in which the magnetoresistive reproducing head described above and an inductive recording head for recording data on a storage medium are integrated into a magnetic disk such as a disk device. Built in storage device.

  On the other hand, in recent years, there is a tendency that the bit length and the track width of a track on a storage medium such as a disk are abruptly reduced as the capacity of the disk device increases. Along with this, the output of the reproduction signal detected as a magnetic signal from the storage medium is also decreasing. Therefore, it is desired to use a high-sensitivity reproducing head such as an MR head. Furthermore, since the track width on the storage medium is narrowed, the miniaturization of the MR head and the MR element is advanced, and there is a possibility that the data of the adjacent track is erroneously read by the leakage magnetic field from the adjacent track. In order to prevent this, a structure is also known in which shields for shielding a leakage magnetic field from adjacent tracks are provided on both sides of the MR element in the track width direction.

  In general, a storage medium such as a disk is composed of a plurality of concentric tracks that can be accessed by a reproducing head or a composite thin film magnetic head. Further, each track is divided into a plurality of storage areas. Each of the plurality of storage areas is called a “sector”.

  Further, a reproducing head using an MR element generates Barkhausen noise when the magnetoresistive film constituting the MR element does not have a single domain structure. Due to this Barkhausen noise, an inconvenient situation occurs in which the output of the reproduction signal detected from the storage medium varies greatly. As a countermeasure, in order to perform magnetic domain control of the magnetoresistive effect film of the MR element and to make the magnetoresistive effect film into a single magnetic domain structure, as shown in FIG. 31 and FIG. A magnetic domain control film for applying a bias magnetic field (static magnetic field) in advance is formed on the reproducing head.

  FIG. 31 is a perspective view showing a schematic configuration of a reproducing head according to a conventional first example, FIG. 32 is a perspective view showing a schematic configuration of a reproducing head according to a second conventional example, and FIG. It is a perspective view which shows schematic structure of the reproducing head which concerns on the conventional 3rd example.

  In the first example of FIG. 31, the reproducing head 100 includes an MR element 1 whose resistance value changes due to a magnetic field, and an upper electrode terminal 2-1 and a lower electrode terminal 2-2 formed so as to sandwich the MR element 1 therebetween. And an upper shield part 3-1 and a lower shield part 3-2 for shielding a leakage magnetic field from an adjacent track on the storage medium.

  In general, as one of the structures aimed at increasing the sensitivity of the MR head, a CPP that allows a current to flow in a direction perpendicular to the plane of the MR element 1 in order to relatively increase the change in resistance value due to the magnetic field of the MR element. (Current Perpendicular to Plane) structure is used. More specifically, as shown in FIG. 31, by applying a predetermined voltage V from the constant voltage source PS to the MR element 1 via the upper electrode terminal 2-1 and the lower electrode terminal 2-2. A constant current is made to flow in a direction perpendicular to the in-plane of the MR element 1.

  Furthermore, as shown in FIG. 31, the MR element 1 has two types of magnetic layers including a pinned layer 12 and a free layer 13 that are stacked via a nonmagnetic layer (or low resistance layer) 14. Here, the magnetization direction of the pinned layer 12 is fixed by the antiferromagnetic layer 11. On the other hand, the magnetization direction of the free layer 13 is changed by a magnetic field from a track on the storage medium. In order to perform the magnetic domain control as described above on the free layer 13, the MR element 1 has a high coercive force on both sides in the track width direction (direction perpendicular to the height direction and the film thickness direction of the MR element). A hard film 600 is provided. The hard film 600 functions as a magnetic domain control film for applying a constant bias magnetic field to the free layer 13. More specifically, as the hard film 600, a high coercivity film typified by CoPt (cobalt platinum) or the like, or a laminated film of an antiferromagnetic film typified by PdPtMn (palladium platinum manganese) and the like, and a ferromagnetic film, It is formed on both sides of the MR element 1 in the track width direction.

  On the other hand, in the second example of FIG. 32, the reproducing head 110 includes the MR element 1, the upper electrode terminal 2-1, the lower electrode terminal 2-2, and the upper shield as in the case of FIG. Part 3-1 and lower shield part 3-2. Further, also in FIG. 32, a predetermined voltage V is applied from the constant voltage source PS to the MR element 1 through the upper electrode terminal 2-1 and the lower electrode terminal 2-2, as in the case of FIG. By applying this, a constant current flows in a direction perpendicular to the in-plane of the MR element 1.

  Further, in FIG. 32, in order to perform the magnetic domain control as described above on the free layer of the MR element 1 (see FIG. 31), a laminated film of the biasing antiferromagnetic film 610 and the ferromagnetic film 620 (FIG. 31 corresponding to the hard film 31) is laminated on one side of the MR element 1 in the film thickness direction (that is, the track bit length direction). This laminated film also functions as a magnetic domain control film for applying a constant bias magnetic field to the free layer.

  On the other hand, in the reproducing head 120 as shown in FIG. 33, the soft film 630 which is a soft magnetic film having a low coercive force is provided on the track width of the MR element 1 in order to promote the high recording density of the magnetic storage device. It is formed on both sides of the direction. The soft film 630 has a side shield function that reliably shields a leakage magnetic field from an adjacent track on the storage medium. This reliably suppresses crosstalk between a desired track on the storage medium and an adjacent track, so that a reproduction signal having a good signal-to-noise ratio (S / N ratio) can be obtained and adjacent to each other. It can be considered that the distance between the tracks to be recorded can be made relatively narrow, and the high recording density of the magnetic storage device is promoted.

  Here, in order to increase the recording density of the magnetic storage device, when soft films are formed on both sides in the track width direction of the MR element as shown in FIG. 33, the structure of the conventional read head is as shown in FIG. A hard film functioning as a magnetic domain control film cannot be provided on both sides of the MR element in the track width direction.

  Therefore, when soft films are formed on both sides in the track width direction of the MR element as shown in FIG. 33, the conventional read head has a magnetic domain control film on one side in the film thickness direction of the MR element as shown in FIG. Therefore, a structure in which a laminated film of an antiferromagnetic film and a ferromagnetic film functioning as a structure is provided must be provided.

  However, when a structure in which a laminated film of an antiferromagnetic film and a ferromagnetic film is provided on one side in the film thickness direction of the MR element, the laminated film of the antiferromagnetic film and the ferromagnetic film is on the MR element. As a result, the distance between the upper shield part and the lower shield part of the read head increases. For this reason, the length of the track of the reproducing head in the bit length direction (that is, the read gap) is increased. Therefore, it becomes difficult to cope with the higher recording density of the magnetic storage device.

  Here, for reference, the following Patent Documents 1 to 3 related to the structure of the conventional reproducing head as described above are presented as prior art documents. In any of these Patent Documents 1 to 3, the same problem as the conventional reproducing head described above occurs.

JP 2003-264324 A JP 7-210828 A JP 2002-222504 A

  The present invention has been made in view of the above problems, and in order to obtain a reproduction signal having a good S / N ratio and to cope with an increase in recording density of a magnetic storage device such as a disk device, a magnetic film formed by a hard film or the like. Read head, composite thin-film magnetic head, and composite thin-film magnetic head capable of performing magnetic domain control of a resistive element and reliably preventing crosstalk between a desired track and an adjacent track on a storage medium An object of the present invention is to provide a disk device in which a magnetic head is incorporated.

  In order to solve the above-described problems, one aspect of the present invention includes a magnetoresistive effect element whose resistance value varies depending on a magnetic field, a first electrode terminal formed so as to sandwich the magnetoresistive effect element, and a second electrode terminal. In a reproducing head that reproduces information of an arbitrary storage area in a storage medium as a magnetic signal by using a change in the resistance value of the magnetoresistive element, the magnetoresistive element A laminated portion including a high coercive force film and a soft magnetic film for applying a bias magnetic field in advance is formed at both ends in the width direction of the magnetoresistive effect element.

  Preferably, in one embodiment of the present invention, a nonmagnetic film is formed between the high coercive force film and the soft magnetic film.

  Furthermore, preferably, in one aspect of the present invention, the laminated portion has a configuration in which at least one high coercive force film is formed between at least two soft magnetic films.

  Furthermore, preferably, in one aspect of the present invention, the stacked portion has a configuration in which at least one soft magnetic film and at least one high coercive force film are stacked.

  On the other hand, according to another aspect of the present invention, there is provided a magnetoresistive effect element whose resistance value is changed by a magnetic field, and a first electrode terminal and a second electrode terminal formed so as to sandwich the magnetoresistive effect element. In a reproducing head that reproduces information of a desired storage area in a storage medium as a magnetic signal using a change in resistance value of the magnetoresistive effect element, a constant bias magnetic field is applied in advance to the magnetoresistive effect element And a laminated portion including a soft magnetic film and a laminated film in which an antiferromagnetic film and a ferromagnetic film magnetically fixed by the antiferromagnetic film are laminated. It is comprised so that it may form in the both ends.

  Preferably, in another aspect of the present invention, the laminated portion has a configuration in which a nonmagnetic film is formed between the laminated film of the antiferromagnetic film and the ferromagnetic film, and the soft magnetic film. ing.

  Still preferably, in another aspect of the present invention, the laminated portion has a configuration in which at least one antiferromagnetic film and the laminated film of the ferromagnetic film are formed between at least two soft magnetic films. It has become.

  Further, preferably, in another aspect of the present invention, at least one soft magnetic film, at least one antiferromagnetic film, and the laminated film of the ferromagnetic film are laminated.

  On the other hand, the present invention provides a composite thin film magnetic head having a structure in which a reproducing head having the above-described configuration and a recording head for recording information in an arbitrary storage area in a storage medium are integrated. .

  On the other hand, the present invention provides a composite type thin film magnetic head having a structure in which a reproducing head having the above-described structure and a recording head for recording information in an arbitrary storage area in a storage medium are integrated. The composite thin-film magnetic head is configured to reciprocate between a disk in which a storage area composed of a plurality of concentric tracks is formed in the storage medium, and an inner circumferential position and an outer circumferential position of the disk. A voice coil motor that drives the disk, a spindle motor that drives the disk to be rotatable, and the composite thin film magnetic head are used to record information at an arbitrary position of the disk and to be recorded at the arbitrary position. And a control unit that controls the operation of reproducing the stored information.

  In summary, in the present invention, a high coercive force film (for example, a hard film) functioning as a magnetic domain control film on both ends in the track width direction of a magnetoresistive effect element (MR element) in a reproducing head, and between adjacent tracks. A laminated portion with a soft magnetic film (for example, a soft film) for suppressing crosstalk is formed. Therefore, it is possible to simultaneously realize the magnetic domain control of the magnetoresistive effect element by the high coercive force film and the prevention of crosstalk between adjacent tracks by the side shield of the soft magnetic film, which could not be achieved at the same time. Become.

  On the other hand, instead of the above-mentioned high coercive force film, even if a laminated film of an antiferromagnetic film and a ferromagnetic film is formed, the ferromagnetic film is magnetically fixed (pinned) by the antiferromagnetic film Thus, it is possible to realize the magnetic domain control of the magnetoresistive effect element.

  As described above, the magnetic domain control of the magnetoresistive effect element and the prevention of crosstalk between adjacent tracks on the storage medium can be realized at the same time, which is favorable in the fine element processing corresponding to the high density recording of the magnetic storage device. A reproducing head can be easily manufactured with a yield, and a reproducing signal having a good S / N ratio without Barkhausen noise can be obtained.

  On the other hand, in the present invention, a composite having a structure in which the magnetoresistive effect reproducing head having the above-described configuration and an inductive recording head for recording information (data) on a storage medium are integrated. A thin film magnetic head is incorporated in a magnetic storage device such as a disk device. The composite thin-film magnetic head having the reproducing head and the recording head can be easily manufactured with a good yield in micro-element processing corresponding to high-density recording of a magnetic storage device.

  On the other hand, in the present invention, a disk device incorporating the composite thin film magnetic head having the above-described configuration can be easily manufactured with a good yield, and therefore, it can cope with high density recording of the disk device. Is easily possible.

  Hereinafter, the configuration of a preferred embodiment of the present invention will be described with reference to the accompanying drawings (FIGS. 1 to 30).

  FIG. 1 is a perspective view showing a schematic configuration of a basic embodiment based on the basic principle of the present invention. Hereinafter, the same components as those described above are denoted by the same reference numerals.

  As shown in FIG. 1, the reproducing head 10 according to the basic embodiment of the present invention includes an MR element 1 whose resistance value varies with a magnetic field, as in the case of the first conventional example (see FIG. 31), Leakage from the upper electrode terminal (first electrode terminal) 2-1 and lower electrode terminal (second electrode terminal) 2-2 formed so as to sandwich the MR element 1 and the adjacent track on the storage medium It has an upper shield part (first shield part) 3-1 and a lower shield part (second shield part) 3-2 for shielding a magnetic field.

  Also in FIG. 1, a CPP structure is used in which a current flows in a direction perpendicular to the plane of the MR element 1 as in the case of the first example of the related art described above. More specifically, as shown in FIG. 1, by applying a predetermined voltage V from the constant voltage source PS to the MR element 1 via the upper electrode terminal 2-1 and the lower electrode terminal 2-2. A constant current is made to flow in a direction perpendicular to the in-plane of the MR element 1.

  Further, as shown in FIG. 1, the MR element 1 has two types of magnetic layers including a pinned layer 12 and a free layer 13 stacked via a nonmagnetic layer (or low resistance layer) 14. Here, the magnetization direction of the pinned layer 12 is fixed by the antiferromagnetic layer 11. On the other hand, the magnetization direction of the free layer 13 is changed by a magnetic field from a track on the storage medium.

  Further, in the basic embodiment of FIG. 1, a high coercive force film (also called a hard film) that functions as a magnetic domain control film for applying a constant bias magnetic field to the free layer 13 in advance on both sides of the MR element 1 in the track width direction. 5 and a laminated portion 6 including a soft magnetic film (also referred to as a soft film) 4 for suppressing crosstalk between adjacent tracks is formed. The laminated portion 6 simultaneously realizes the magnetic domain control of the MR element 1 by the high coercive force film 5 and the prevention of crosstalk between adjacent tracks by the side shield of the soft magnetic film 4 that could not be achieved at the same time. Will be able to.

  More specifically, conventionally, since the high coercive force film and the soft magnetic film exist at the same position as described based on FIGS. 31 and 33, the magnetic domain control by the high coercive force film and the adjacent by the soft magnetic film. It was not possible to simultaneously prevent crosstalk between tracks. On the other hand, when the magnetic domain control is performed by the antiferromagnetic film, as described with reference to FIG. 32, since the antiferromagnetic film is laminated on the MR element, the upper shield portion and the lower shield corresponding to the read gap are formed. The distance between the parts has increased, and it has been difficult to cope with the higher recording density of the magnetic storage device.

  On the other hand, in the reproducing head according to the basic embodiment of FIG. 1, as described with reference to FIG. 1, the magnetic domain control and the soft magnetic film by the high coercive force film are performed by laminating the high coercive force film and the soft magnetic film. Can also prevent crosstalk between adjacent tracks. On the other hand, even if a laminated film of an antiferromagnetic film and a ferromagnetic film is used instead of the high coercive force film, the magnetic domain of the magnetoresistive effect element is obtained by the ferromagnetic film magnetically fixed by the antiferromagnetic film. Control can be realized.

  Preferably, in the MR element used in the reproducing head represented by the basic embodiment of FIG. 1, a low resistance film composed of a nonmagnetic low resistance layer is sandwiched between two magnetic films (for example, a pinned layer and a free layer). It may be an element having a structure.

  Further preferably, the MR element used in the reproducing head described above may be an element having a ferromagnetic tunnel junction structure using a tunnel junction of two ferromagnetic films including a pinned layer and a free layer.

  Further preferably, the MR element used in the reproducing head described above may be an element having a multilayer film structure in which at least two magnetic layers and at least one nonmagnetic layer are laminated.

  FIG. 2 is a perspective view showing a schematic configuration of the reproducing head according to the first embodiment of the present invention. Hereinafter, the track width direction, the height direction, and the film thickness direction of the MR element are represented as an X direction, a Y direction, and a Z direction, respectively.

  As shown in FIG. 2, the reproducing head 10 according to the first embodiment of the present invention includes an MR element 1 whose resistance value varies with a magnetic field, as in the case of the basic embodiment (see FIG. 1). The upper electrode terminal 2-1 and the lower electrode terminal 2-2 formed so as to sandwich the MR element 1, the upper shield part 3-1 for shielding a leakage magnetic field from an adjacent track on the storage medium, and the lower electrode terminal 2-1 Side shield part 3-2. In FIG. 2, as in the case of the basic embodiment described above, a CPP structure is used in which current flows in a direction perpendicular to the in-plane of the MR element 1.

  Furthermore, as shown in FIG. 2, the MR element 1 has two types of magnetic layers including a pinned layer 12 and a free layer 13 stacked via a nonmagnetic layer (or low resistance layer) 14. Here, the magnetization direction of the pinned layer 12 is fixed by the antiferromagnetic layer 11. On the other hand, the magnetization direction of the free layer 13 is changed by a magnetic field from a track on the storage medium.

  Further, the reproducing head 10 according to the embodiment of FIG. 2 includes an upper soft film 40 and a lower soft film for suppressing crosstalk between adjacent tracks on both sides of the MR element 1 in the track width direction (X direction). 41, a hard film 50 functioning as a magnetic domain control film is formed. By applying a certain bias magnetic field to the free layer 13 of the MR element 1 by the hard film 50, the magnetic domain control of the free layer 13 of the MR element 1 is performed. The upper soft film 40, the hard film 50, and the lower soft film 41 constitute a stacked film 60 that functions as a stacked portion (see FIG. 1).

  Preferably, a nonmagnetic film is formed between the upper soft film 40 and the hard film 50 and between the hard film 50 and the lower soft film 41, respectively. Further, preferably, a nonmagnetic insulating film is formed between the MR element 1 and the laminated film 60.

  In the reproducing head according to the embodiment of FIG. 2, the MR element of the hard film 50, which could not be achieved by the laminated film 60 of the upper soft film 40, the hard film 50, and the lower soft film 41 in the past, could be achieved. Magnetic domain control and prevention of crosstalk between adjacent tracks by side shields of the two soft films 40 and 41 can be realized at the same time.

  FIG. 3 is a plan view showing a schematic configuration of the disk device according to the embodiment of the present invention, and FIG. 4 is a front view showing a schematic configuration of the composite thin film magnetic head according to the embodiment of the present invention. .

  The disk device 200 shown in FIG. 3 roughly includes a disk enclosure 201 for housing the disk 205, the composite thin film magnetic head 18, the spindle motor 220, the voice coil motor 140, and the like in the disk device, and a composite thin film. The magnetic head 18 includes a control unit (not shown) that controls a data writing operation and a data reading operation with respect to the disk 205. In the disk enclosure 201 described above, a rotating disk 205 such as a single hard disk or a plurality of hard disks that are rotationally driven by a spindle motor 220 coupled to a spindle 210 is coaxially provided. The operation of the spindle motor 220 is controlled by a servo controller (not shown) of the control unit. A plurality of tracks (or a plurality of cylinders) are formed on the magnetic recording surface on the front surface (or the back surface) of the disk 205, and a data pattern corresponding to predetermined data is written in a sector at an arbitrary position on the track. ing.

  Here, “cylinder” refers to an assembly of a plurality of tracks in the vertical direction that can be simultaneously accessed by a plurality of thin film magnetic heads on each disk when a plurality of disks are stacked and arranged. (Ie, a plurality of cylinder-shaped tracks).

  More specifically, as shown in FIG. 4, the composite thin film magnetic head 18 magnetically records data recorded at an arbitrary position on the magnetic recording surface of the disk 205 as typified by the embodiment of FIG. Any magnetic recording surface of the disk 205 is utilized by utilizing a magnetoresistive reproducing head 10 (for data reading operation) for reproducing as a signal and a gap (gap) G between the upper magnetic pole 16 and the lower electrode 17. In this structure, an inductive recording head 15 (for data writing operation) for recording data at the position is integrated.

  Further, as shown in FIG. 3 again, the composite thin film magnetic head 18 is mounted on the tip of a head supporting arm 170. The arm 170 is driven by a voice coil motor 140 controlled by a servo controller so as to reciprocate between the position of the inner periphery (inner side) and the outer periphery (outer side) of the disk 205. . As a result, it becomes possible to access the sectors of all data areas where data is written on the magnetic recording surface of the disk 200. Here, a pivot bearing 300 is attached to the center of the voice coil motor 140 so that the arm 170 can smoothly reciprocate.

  For example, when the arm 170 is rotated in the direction of arrow B by the voice coil motor 140, the composite thin-film magnetic head 18 moves in the radial direction of the disk 205, and a desired track can be scanned. The components including the voice coil motor 140 and the arm 170 are also called a head actuator. Further, a flexible printed circuit board (usually abbreviated as FPC (Flexible Printed Circuit)) 310 is attached to the head actuator, and the voice coil motor 140 and the composite thin film magnetic field are connected via the flexible printed circuit board 310. A servo signal for controlling the operation of the head 18 is supplied.

  A ramp mechanism 180 is disposed on the outer periphery of the disk 205, and engages with the tip of the arm 170 to hold the composite thin film magnetic head 18 away from the disk 205.

  Next, with reference to FIG. 5 to FIG. 10, the manufacturing process of the reproducing head according to the first embodiment of the present invention will be described in detail.

  FIG. 5 is a perspective view showing the configuration of the main part of the read head according to the embodiment of FIG. 2, and FIG. 6 is a cross-sectional view (No. 1) for explaining the read head manufacturing process according to the embodiment. 7 is a cross-sectional view for explaining the manufacturing process of the reproducing head according to the above embodiment (part 2), and FIG. 8 is a cross-sectional view for explaining the manufacturing process of the reproducing head according to the above embodiment (part 3). FIG. 9 is a cross-sectional view for explaining the manufacturing process of the reproducing head according to the embodiment (No. 4), and FIG. 10 is a cross-sectional view for explaining the manufacturing process of the reproducing head according to the embodiment. (No. 5).

  In FIG. 5, in order to easily understand the manufacturing process of the reproducing head according to the embodiment of FIG. 2, the uppermost upper shield part 3-1 and the lowermost lower shield part 3-2 A schematic structure of the reproducing head 10 in a state in which is removed is shown. Therefore, the structure of the reproducing head 10 in FIG. 5 is the same as the structure of the reproducing head 10 in FIG. 2 except for the shield part 3-1 and the lower shield part 3-2. Therefore, the description of the reproducing head 10 in FIG. 5 is omitted here.

  In FIGS. 6 to 10, the left side view (a) shows a cross-sectional view in the height direction of the MR element at the center of the terminal width of the read head 10, and the right side view (b) of FIG. ) Shows a cross-sectional view in the width direction (track width direction) of the MR element at the center of the terminal width of the read head 10. A manufacturing process of the reproducing head according to the embodiment of FIG. 2 will be described below.

  First, as shown in FIG. 6, the lower shield part 3-2, the lower electrode terminal 2-2, the MR element 1, and the upper electrode terminal 2-1 are sequentially formed on the substrate. .

  Here, the lower electrode terminal 2-2 may not be formed, and the lower shield part 3-2 may also serve as the lower electrode terminal. In this case, it is preferable to use the same material for the lower electrode terminal and the lower shield part. Further, the upper electrode terminal 2-1 may not be formed, and the upper shield 3-1 to be formed later may also serve as the upper electrode terminal. In this case, it is preferable to use the same material for the upper electrode terminal and the upper shield part.

Preferably, the MR element 1 is a spin such as NiFe / Cu / NiFe / IrMn (permalloy / copper / permalloy / iridium / manganese) made of a giant magnetoresistive effect element (usually abbreviated as GMR (Giant Magnetoresistance Effect) element). Valve film, laminated ferrimagnetic spin valve film such as NiFe / Cu / CoFeB / Ru / CoFeB / PdPtMn (permalloy / copper / cobalt iron boron / ruthenium / cobalt iron boron / palladium platinum manganese), or NiFe / Al ₂ O ₃ A tunnel junction type magnetoresistive film such as / NiFe / PdPtMn (permalloy / aluminum oxide / permalloy / palladium platinum manganese) is used.

  Second, as shown in FIG. 7, the resist 7-1 is patterned so as to have a desired shape. Using the resist 7-1 as a mask, the upper electrode terminal 2-1, the MR element 1, and the lower electrode terminal 2-2 are partially etched by ion milling or the like. At this point, it is desirable to adjust the etching depth so that the hard film 50 (see FIG. 5, for example) to be formed later is disposed in the vicinity of the free layer in the MR element.

Third, as shown in FIG. 7, a nonmagnetic and nonconductive insulating film 7-2 is formed without removing the resist 7-1. As this insulating film, Al ₂ O ₃ (aluminum oxide) or the like is used.

  Fourth, as shown in FIG. 8, the lower soft film 41, the lower nonmagnetic film 43, the hard film 50, the upper nonmagnetic film 42, and the upper soft film 40 are sequentially formed without removing the resist 7-1. Form a film. NiFe (permalloy) or the like is used as the upper soft film and the lower soft film. On the other hand, CoPt (cobalt platinum), CoCrPt (cobalt / chromium platinum) or the like is used as the hard film.

  Fifth, as shown in FIG. 9, after removing the resist 7-1, the resist 8-1 is patterned so as to have a desired shape again. Next, using the resist 8-1 as a mask, the upper electrode terminal, the MR element, the lower electrode terminal, the hard film, the upper and lower soft films, the upper and lower nonmagnetic films and the like are etched by ion milling or the like. Next, an insulating film 8-2 is formed.

  Sixth, as shown in FIG. 10, after the resist 8-1 is removed, the upper shield part 3-1 is formed.

  In the above structure, the upper soft film 40 may be in electrical and magnetic contact with the upper shield part 3-1. On the other hand, the upper non-magnetic film 42 and the lower non-magnetic film 43 are insulating films, and the upper soft film 40, the upper non-magnetic film 42, the hard film 50, the lower non-magnetic film 43, and the lower soft film 41. Suppose that the current does not flow to the extent that the detection of the change in the resistance value of the MR element 1 is affected. In this case, when the lower soft film 41 and the lower electrode terminal 2-2 or the lower electrode terminal 2-2 is used as the lower shield part 3-2, the lower soft film 41 and the lower shield part 3- 2 may be in electrical or magnetic contact.

  In the above description, the upper shield part 3-1, the lower shield part 3-2, the upper electrode terminal 2-1, and the lower electrode terminal 2-2 are formed by plating, vapor deposition, sputtering, or the like. The MR element 1, the upper soft film 40, the upper nonmagnetic film 42, the hard film 50, the lower nonmagnetic film 43, the lower soft film 41, and the insulating films 7-2 and 8-2 are formed by sputtering or the like. Be filmed.

  By the above-described reproducing head manufacturing process, the laminated film of the hard film and the upper and lower soft films is disposed on both ends in the track width direction of the MR element via the insulating film. With this laminated film, it is possible to control the magnetic layer of the free layer and not to be affected by the leakage magnetic field from the adjacent track. As a result, data can be recorded on the track at a high recording density, and a composite thin film magnetic head that can cope with an increase in the recording density of the magnetic storage device can be obtained.

  FIG. 11 is a perspective view showing a schematic configuration of a first modification of the embodiment of FIG. The reproducing head 10 according to the first modified example of FIG. 11 has a crosstalk between adjacent tracks on both sides in the track width direction (X direction) of the MR element 1 in substantially the same manner as in the embodiment of FIG. In this structure, a hard film 50 functioning as a magnetic domain control film is formed between the upper soft film 40 and the lower soft film 41. The upper soft film 40, the hard film 50, and the lower soft film 41 constitute a laminated film 60.

  Furthermore, in the reproducing head 10 according to the first modification example of FIG. 11, the MR element 1 whose resistance value changes due to the magnetic field, and the upper shield part 30-1 for shielding the leakage magnetic field from the adjacent track on the storage medium The lower shield terminal 30-2 is formed, but the upper electrode terminal and the lower electrode terminal as shown in the embodiment of FIG. 2 are not formed. In other words, in the first modified example of FIG. 11, the upper shield part 30-1 and the lower shield part 30-2 have a structure that also serves as the upper electrode terminal and the lower electrode terminal, respectively. In this case, it is desirable to use the same material for the upper shield part, the lower shield part, the upper electrode terminal, and the lower electrode terminal. In the first modification of FIG. 11 as well, as in the case of the embodiment of FIG. 2 described above, a CPP structure is used in which current flows in a direction perpendicular to the in-plane of the MR element 1.

  According to the first modification of FIG. 11, since it is not necessary to form the upper electrode terminal and the lower electrode terminal, the manufacturing process of the reproducing head can be simplified.

  FIG. 12 is a perspective view showing a schematic configuration of a second modification of the embodiment of FIG. The reproducing head 10 according to the first modified example of FIG. 12 has a crosstalk between adjacent tracks on both sides in the track width direction (X direction) of the MR element 1 in substantially the same manner as in the embodiment of FIG. In this structure, a hard film 50 functioning as a magnetic domain control film is formed between the upper soft film 40 and the lower soft film 41. The upper soft film 40, the hard film 50, and the lower soft film 41 constitute a laminated film 60.

  Further, also in the reproducing head 10 according to the second modified example of FIG. 12, the MR element 1 whose resistance value changes due to the magnetic field and the adjacent on the storage medium are substantially the same as in the first modified example of FIG. The upper shield part 31-1 and the lower shield part 31-2 for shielding the leakage magnetic field from the track are formed, but the upper electrode terminal and the lower electrode terminal are not formed. In other words, also in the 2nd modification of FIG. 12, the upper side shield part 31-1 and the lower side shield part 31-2 have a structure which each serves as an upper side electrode terminal and a lower side electrode terminal, respectively. In the second modified example of FIG. 12 as well, the CPP structure in which current flows in a direction perpendicular to the plane of the MR element 1 is used as in the case of the above-described embodiment of FIG.

  However, in the second modified example of FIG. 12, unlike the case of the first modified example of FIG. 11 described above, the shape of the upper shield part 31-1 is the same as that of the upper shield part 3 in the example of FIG. -1 and the upper electrode terminal 2-1 are combined.

  Therefore, according to the second modification of FIG. 12, the upper shield part can be provided with a shielding function under substantially the same conditions as those of the above-described embodiment of FIG. 2, and in the direction perpendicular to the plane of the MR element. Current can flow.

  FIG. 13 is a perspective view showing a schematic configuration of a third modification of the embodiment of FIG. The reproducing head 10 according to the third modification example of FIG. 13 has a crosstalk between adjacent tracks on both sides in the track width direction (X direction) of the MR element 1 in substantially the same manner as in the embodiment of FIG. In this structure, a hard film 50 functioning as a magnetic domain control film is formed between the upper soft film 40 and the lower soft film 41. The upper soft film 40, the hard film 50, and the lower soft film 41 constitute a laminated film 60.

  Further, in the reproducing head 10 according to the third modified example of FIG. 13, the MR element 1 whose resistance value changes due to the magnetic field, the upper MR element electrode terminal portion 15-1 and the lower MR formed in advance in this MR element. An element electrode terminal portion 15-2 and an upper shield portion 3-1 and a lower shield portion 3-2 for shielding a leakage magnetic field from an adjacent track on the storage medium are formed. In other words, in the third modification of FIG. 13, the reproducing head is manufactured using MR elements in which electrode terminal portions are formed in advance at both ends. In the third modified example of FIG. 13 as well, the CPP structure in which current flows in a direction perpendicular to the in-plane of the MR element 1 is used as in the case of the embodiment of FIG.

  According to the third modification of FIG. 13, it is unnecessary to form the upper electrode terminal and the lower electrode terminal in the reproducing head manufacturing process by using the existing electrode terminal portion. The process can be simplified.

  FIG. 14 is a perspective view showing a schematic configuration of a fourth modification of the embodiment of FIG. In the reproducing head 10 according to the fourth modified example of FIG. 14, as in the case of the third modified example of FIG. 13 described above, the MR element 1 whose resistance value is changed by a magnetic field and the MR element 1 formed in advance on this MR element. Upper MR element electrode terminal portion 15-1 and lower MR element electrode terminal portion 15-2, and upper shield portion 3-1 and lower shield portion 3- for shielding leakage magnetic fields from adjacent tracks on the storage medium 2 are formed. 14 also uses a CPP structure in which current flows in a direction perpendicular to the in-plane of the MR element 1, as in the case of the above-described embodiment of FIG.

  Furthermore, the reproducing head 10 according to the fourth modification example of FIG. 14 includes an upper soft film 40 for suppressing crosstalk between adjacent tracks on both sides of the MR element 1 in the track width direction (X direction), and a magnetic domain. A hard film 50 functioning as a control film is formed. The upper soft film 40 and the hard film 50 constitute a laminated film 61. In other words, in the fourth modified example of FIG. 14, the lower soft film is omitted, and the crosstalk is suppressed only by the upper soft film 40.

  Therefore, according to the fourth modified example of FIG. 14, it is not necessary to bother forming the lower soft film in the manufacturing process of the reproducing head, so that the manufacturing process of the reproducing head can be simplified.

  FIG. 15 is a perspective view showing a schematic configuration of a fifth modification of the embodiment of FIG. In the reproducing head 10 according to the fifth modified example of FIG. 15, the MR element 1 whose resistance value changes due to the magnetic field, the upper MR element electrode terminal portion 15-1 and the lower MR element electrode formed in advance on this MR element. A terminal portion 15-2 and an upper shield portion 32-1 and a lower shield portion 32-2 for shielding a leakage magnetic field from an adjacent track on the storage medium are formed. 15 also uses a CPP structure in which a current flows in a direction perpendicular to the plane of the MR element 1, as in the case of the above-described embodiment of FIG.

  Further, in the reproducing head 10 according to the fifth modified example of FIG. 15, the soft film is not formed on both sides of the MR element 1 in the track width direction (X direction), and only the hard film 50 functioning as a magnetic domain control film is formed. It has a formed structure. Instead, the upper shield part 32-1 and the lower shield part 32-2 are formed in a shape that includes portions of the upper soft film and the lower soft film, respectively. In other words, in the fifth modified example of FIG. 15, the upper shield part 32-1 and the lower shield part 32-2 have a structure that also serves as the upper soft film and the lower soft film, respectively, The shape is such that each of the soft film and the lower soft film is included.

  Therefore, according to the fifth modification of FIG. 15, it is not necessary to bother forming the upper soft film and the lower soft film in the reproducing head manufacturing process, so that the reproducing head manufacturing process can be simplified.

  FIG. 16 is a perspective view showing a schematic configuration of a sixth modification of the embodiment of FIG. In the reproducing head 10 according to the sixth modified example of FIG. 16, the MR element 1 whose resistance value changes due to the magnetic field, the upper MR element electrode terminal portion 15-1 and the lower MR element electrode formed in advance on this MR element. A terminal portion 15-2 and an upper shield portion 33-1 and a lower shield portion 33-2 for shielding a leakage magnetic field from an adjacent track on the storage medium are formed. Also in the sixth modified example of FIG. 16, a CPP structure is used in which current flows in a direction perpendicular to the in-plane of the MR element 1, as in the case of the above-described embodiment of FIG.

  Further, in the reproducing head 10 according to the sixth modified example of FIG. 16, the soft film is not formed on both sides of the MR element 1 in the track width direction (X direction), and only the hard film 50 functioning as a magnetic domain control film is formed. It has a formed structure. Instead, the upper shield part 33-1 is formed in the vicinity of the upper soft film. In other words, in the sixth modified example of FIG. 16, the upper shield part 33-1 has a structure that also serves as the upper soft film. However, in the sixth modified example of FIG. 16, only the upper shield part 33-1 has a shape that includes the upper soft film part, and the shape of the lower shield part 33-2 is the same as that of the above-described figure. This is the same as the case of the 14th modified example.

  Therefore, according to the sixth modification of FIG. 16, it is not necessary to bother forming the lower soft film in the reproducing head manufacturing process, so that the reproducing head manufacturing process can be simplified.

  FIG. 17 is a perspective view showing a schematic configuration of a seventh modification of the embodiment of FIG. In the reproducing head 10 according to the seventh modified example of FIG. 17, the MR element 1 whose resistance value is changed by a magnetic field, the upper MR element electrode terminal portion 15-1 and the lower MR element electrode formed in advance on this MR element. A terminal portion 15-2 and an upper shield portion 34-1 and a lower shield portion 34-2 for shielding a leakage magnetic field from an adjacent track on the storage medium are formed. In the seventh modification of FIG. 17 as well, the CPP structure in which current flows in a direction perpendicular to the in-plane of the MR element 1 is used as in the case of the embodiment of FIG.

  Furthermore, the read head 10 according to the seventh modification example of FIG. 17 has crosstalk between the hard film 50 functioning as a magnetic domain control film and adjacent tracks on both sides of the MR element 1 in the track width direction (X direction). It has a structure in which a lower soft film 41 for suppression is formed. In other words, in the seventh modification of FIG. 17, the upper shield part 34-1 has a structure that also serves as the upper soft film, and has a shape that includes the upper soft film part. .

  Therefore, according to the seventh modification of FIG. 17, it is not necessary to form the upper soft film in the reproducing head manufacturing process, so that the reproducing head manufacturing process can be simplified.

  FIG. 18 is a perspective view showing a schematic configuration of an eighth modification of the embodiment of FIG. In the reproducing head 10 according to the eighth modification shown in FIG. 18, as in the case of the fifth modification shown in FIG. 15, the MR element 1 whose resistance value changes due to the magnetic field and the adjacent tracks on the storage medium An upper shield part 35-1 and a lower shield part 35-2 for shielding a leakage magnetic field are formed. However, in the reproducing head 10 according to the eighth modified example of FIG. 18, unlike the above-described fifth modified example of FIG. 15, the upper MR element electrode terminal portion and the lower MR element electrode terminal portion are provided in advance in the MR element. Not formed.

  In other words, in the eighth modified example of FIG. 18, the upper shield part 35-1 and the lower shield part 35-2 have a structure that also serves as the upper MR element electrode terminal part and the lower MR element electrode terminal part, respectively. ing. In the eighth modification of FIG. 18 as well, the CPP structure in which current flows in the direction perpendicular to the in-plane of the MR element 1 is used, as in the case of the embodiment of FIG.

  Further, in the reproducing head 10 according to the eighth modified example of FIG. 18, the soft film is not formed on both sides of the MR element 1 in the track width direction (X direction), and only the hard film 50 functioning as a magnetic domain control film is formed. It has a formed structure. Instead, the upper shield part 35-1 and the lower shield part 35-2 are formed so as to include the upper soft film part and the lower soft film part, respectively. In other words, in the eighth modified example of FIG. 18, the upper shield part 35-1 and the lower shield part 35-2 have a structure that also serves as the upper soft film and the lower soft film, respectively, The shape is such that each of the soft film and the lower soft film is included. Further, as described above, the upper shield part 35-1 and the lower shield part 35-2 have a structure in which the upper MR element electrode terminal part and the lower MR element electrode terminal part are also used.

  Therefore, according to the eighth modified example of FIG. 18, it is not necessary to form the upper MR element electrode terminal portion, the lower MR element electrode terminal portion, the upper soft film, and the lower soft film. The manufacturing process is significantly simplified.

  FIG. 19 is a perspective view showing a schematic configuration of a ninth modification of the embodiment of FIG. In the reproducing head 10 according to the ninth modification shown in FIG. 19, as in the case of the sixth modification shown in FIG. 16, the MR element 1 whose resistance value is changed by a magnetic field and the adjacent track on the storage medium An upper shield part 36-1 and a lower shield part 36-2 for shielding the leakage magnetic field are formed. However, in the reproducing head 10 according to the ninth modification of FIG. 19, unlike the above-described sixth modification of FIG. 16, the upper MR element electrode terminal portion and the lower MR element electrode terminal portion are provided in advance in the MR element. Not formed.

  In other words, in the ninth modification of FIG. 19, the upper shield part 36-1 and the lower shield part 36-2 have a structure that also serves as the upper MR element electrode terminal part and the lower MR element electrode terminal part, respectively. ing. In the ninth modification of FIG. 19 as well, as in the case of the embodiment of FIG. 2 described above, a CPP structure is used in which current flows in a direction perpendicular to the in-plane of the MR element 1.

  Further, in the reproducing head 10 according to the ninth modification of FIG. 19, the soft film is not formed on both sides of the MR element 1 in the track width direction (X direction), and only the hard film 50 functioning as a magnetic domain control film is formed. It has a formed structure. Instead, the upper shield part 36-1 is formed in the vicinity of the upper soft film. In other words, in the ninth modification example of FIG. 19, the upper shield part 36-1 has a structure that also serves as the upper soft film. However, in the ninth modification of FIG. 19, only the upper shield part 36-1 is shaped to include the upper soft film part, and the shape of the lower shield part 36-2 is as described above. This is the same as in the case of the sixteenth modification. Further, as described above, the upper shield part 36-1 and the lower shield part 36-2 have a structure in which the upper MR element electrode terminal part and the lower MR element electrode terminal part are also used.

  Therefore, according to the ninth modification of FIG. 19, it is not necessary to bother to form the upper MR element electrode terminal portion, the lower MR element electrode terminal portion, and the upper soft film. Simplified.

  FIG. 20 is a perspective view showing a schematic configuration of a tenth modification of the embodiment of FIG. In the reproducing head 10 according to the tenth modification shown in FIG. 20, as in the case of the seventh modification shown in FIG. 17, the MR element 1 whose resistance value is changed by a magnetic field and the adjacent track on the storage medium An upper shield part 37-1 and a lower shield part 37-2 for shielding the leakage magnetic field are formed. However, in the reproducing head 10 according to the tenth modified example of FIG. 20, unlike the above-described seventh modified example of FIG. 17, the upper MR element electrode terminal portion and the lower MR element electrode terminal portion are provided in advance in the MR element. Not formed.

  In other words, in the tenth modified example of FIG. 20, the upper shield part 37-1 and the lower shield part 37-2 have a structure that also serves as the upper MR element electrode terminal part and the lower MR element electrode terminal part, respectively. ing. In the tenth modification of FIG. 20 as well, the CPP structure in which current flows in a direction perpendicular to the in-plane of the MR element 1 is used as in the case of the above-described embodiment of FIG.

  Furthermore, the read head 10 according to the tenth modification example of FIG. 20 has crosstalk between the hard film 50 functioning as a magnetic domain control film and adjacent tracks on both sides of the MR element 1 in the track width direction (X direction). It has a structure in which a lower soft film 41 for suppression is formed. In other words, in the 10th modification of FIG. 20, the upper shield part 37-1 has a structure that also serves as the upper soft film, and has a shape that includes the upper soft film part. . Further, as described above, the upper shield part 37-1 and the lower shield part 37-2 have a structure in which the upper MR element electrode terminal part and the lower MR element electrode terminal part are also used.

  Therefore, according to the tenth modification of FIG. 20, there is no need to bother to form the upper MR element electrode terminal portion, the lower MR element electrode terminal portion, and the upper soft film. Simplified.

  FIG. 21 is a perspective view showing a schematic configuration of a reproducing head according to the second embodiment of the present invention. As shown in FIG. 21, the reproducing head 10 according to the second embodiment of the present invention has an MR element 1 whose resistance value varies with a magnetic field, as in the case of the basic embodiment (see FIG. 1). The upper electrode terminal 2-1 and the lower electrode terminal 2-2 formed so as to sandwich the MR element 1, the upper shield part 3-1 for shielding a leakage magnetic field from an adjacent track on the storage medium, and the lower electrode terminal 2-1 Side shield part 3-2. In FIG. 21 as well, as in the case of the basic embodiment described above, a CPP structure is used in which a current flows in a direction perpendicular to the plane of the MR element 1.

  Furthermore, the reproducing head 10 according to the embodiment of FIG. 21 includes an upper soft film 40 for suppressing crosstalk between adjacent tracks on both sides of the MR element 1 in the track width direction (X direction), and a magnetic domain control film. The hard film 50 functioning as a structure is formed. The hard film 50 controls the magnetic domain of the free layer of the MR element 1 by applying a constant bias magnetic field to the free layer of the MR element 1 (see FIG. 2). The upper soft film 40 and the hard film 50 constitute a laminated film 62 that functions as a laminated portion (see FIG. 1).

  Preferably, a nonmagnetic film is formed between the upper soft film 40 and the hard film 50. Further, preferably, a nonmagnetic insulating film is formed between the MR element 1 and the laminated film 62.

  In the reproducing head according to the embodiment of FIG. 21, the magnetic domain control of the MR element by the hard film 50 and the upper soft film, which could not be made compatible with each other by the laminated film 62 of the upper soft film 40 and the hard film 50, can be achieved. The prevention of crosstalk between adjacent tracks by 40 side shields can be realized at the same time.

  Next, a manufacturing process of the reproducing head according to the second embodiment of the present invention will be described with reference to FIGS.

  FIG. 22 is a perspective view showing a configuration of a main part of the reproducing head according to the embodiment of FIG. 21, and FIG. 23 is a cross-sectional view for explaining a manufacturing process of the reproducing head according to the embodiment.

  In FIG. 22, in order to easily understand the manufacturing process of the reproducing head according to the embodiment of FIG. 21, the uppermost upper shield part 3-1, the lowermost lower shield part 3-2, A schematic structure of the reproducing head 10 in a state in which is removed is shown. Therefore, the structure of the reproducing head 10 in FIG. 22 is the same as the structure of the reproducing head 10 in FIG. 21 except for the shield part 3-1 and the lower shield part 3-2. Therefore, the re-explanation regarding the reproducing head 10 of FIG. 22 is omitted here.

  In the left side view (a) of FIG. 23, a sectional view in the height direction of the MR element at the center of the terminal width of the reproducing head 10 is shown, and in the right front view (b) of FIG. A sectional view in the width direction (track width direction) of the MR element at the center of the terminal width of the read head 10 is shown. The manufacturing process of the reproducing head according to the example of FIG. 21 is described below. However, since the portions other than the configuration of the laminated film of the soft film and the hard film are the same as those in the first embodiment shown in FIGS. 5 to 10 described above, the description thereof is omitted here.

  In FIG. 23, instead of sequentially forming the lower soft film, the lower nonmagnetic film, the hard film, the upper nonmagnetic film, and the upper soft film, the hard film 50, the upper nonmagnetic film 42, and the upper soft film are formed. A laminated film of only 40 is used. In the above structure, the upper soft film 40 may be in electrical and magnetic contact with the upper shield part 3-1.

  FIG. 24 is a perspective view showing a schematic configuration of a first modification of the embodiment of FIG. The reproducing head 10 according to the first modification example of FIG. 24 has a crosstalk between adjacent tracks on both sides in the track width direction (X direction) of the MR element 1 in substantially the same manner as in the embodiment of FIG. In this structure, an upper soft film 40 for suppressing the film and a hard film 50 functioning as a magnetic domain control film are formed. The upper soft film 40 and the hard film 50 constitute a laminated film 62.

  Furthermore, in the reproducing head 10 according to the first modification example of FIG. 24, the MR element 1 whose resistance value varies depending on the magnetic field, and the upper shield part 30-1 for shielding the leakage magnetic field from the adjacent track on the storage medium. And the lower shield part 30-2 is formed, but the upper electrode terminal and the lower electrode terminal as shown in the embodiment of FIG. 21 are not formed. In other words, in the first modification of FIG. 24, the upper shield part 30-1 and the lower shield part 30-2 have a structure that also serves as the upper electrode terminal and the lower electrode terminal, respectively. 24 also uses a CPP structure in which a current flows in a direction perpendicular to the plane of the MR element 1, as in the case of the above-described embodiment of FIG.

  According to the first modification of FIG. 24, it is not necessary to form the upper electrode terminal and the lower electrode terminal, so that the manufacturing process of the reproducing head can be simplified.

  FIG. 25 is a perspective view showing a schematic configuration of a second modification of the embodiment of FIG. The reproducing head 10 according to the first modification example of FIG. 25 has a crosstalk between adjacent tracks on both sides in the track width direction (X direction) of the MR element 1 in substantially the same manner as in the embodiment of FIG. In this structure, an upper soft film 40 for suppressing the film and a hard film 50 functioning as a magnetic domain control film are formed. The upper soft film 40 and the hard film 50 constitute a laminated film 62.

  Further, also in the reproducing head 10 according to the second modified example of FIG. 25, the MR element 1 whose resistance value is changed by a magnetic field and the adjacent on the storage medium are substantially the same as in the first modified example of FIG. The upper shield part 31-1 and the lower shield part 31-2 for shielding the leakage magnetic field from the track are formed, but the upper electrode terminal and the lower electrode terminal are not formed. In other words, also in the 2nd modification of FIG. 25, the upper side shield part 31-1 and the lower side shield part 31-2 have a structure which each serves as an upper side electrode terminal and a lower side electrode terminal, respectively. 25 also uses a CPP structure in which a current flows in a direction perpendicular to the plane of the MR element 1, as in the case of the above-described embodiment of FIG.

  However, in the second modified example of FIG. 25, unlike the first modified example of FIG. 24 described above, the shape of the upper shield part 31-1 is the upper shield part 3-1 in the embodiment of FIG. And the upper electrode terminal 2-1.

  Therefore, according to the second modification of FIG. 25, the upper shield part can be provided with a shielding function under substantially the same conditions as those of the above-described embodiment of FIG. 21, and in the direction perpendicular to the plane of the MR element. Current can flow.

  FIG. 26 is a perspective view showing a schematic configuration of a reproducing head according to the third embodiment of the present invention. As shown in FIG. 26, the reproducing head 10 according to the first embodiment of the present invention includes an MR element 1 whose resistance value varies with a magnetic field, as in the case of the basic embodiment described above (see FIG. 1). The upper electrode terminal 2-1 and the lower electrode terminal 2-2 formed so as to sandwich the MR element 1, the upper shield part 3-1 for shielding a leakage magnetic field from an adjacent track on the storage medium, and the lower electrode terminal 2-1 Side shield part 3-2. Also in FIG. 26, as in the case of the basic embodiment described above, a CPP structure is used in which current flows in a direction perpendicular to the plane of the MR element 1.

  Further, the reproducing head 10 according to the embodiment of FIG. 26 includes an upper soft film 40 and a lower soft film for suppressing crosstalk between adjacent tracks on both sides of the MR element 1 in the track width direction (X direction). 41, a laminated film in which an antiferromagnetic film 51 and a ferromagnetic film 52 functioning as a magnetic domain control film are laminated is formed. In other words, the reproducing head 10 according to the embodiment of FIG. 26 has a structure in which the ferromagnetic film 52 is magnetically fixed by the antiferromagnetic film 51. The upper soft film 40, the laminated film in which the antiferromagnetic film 51 and the ferromagnetic film 52 are laminated, and the lower soft film 41 constitute a laminated film 63 that functions as a laminated portion (see FIG. 1). .

  In the reproducing head according to the embodiment of FIG. 26, a constant bias magnetic field is applied from the ferromagnetic film 52 magnetically fixed (pinned) by the antiferromagnetic film 51 to the free layer of the MR element 1. Thus, it becomes possible to realize the magnetic domain control of the MR element.

  As described above, in the reproducing head 10 according to the third example of FIG. 26, an antiferromagnetic film and a ferromagnetic film are laminated instead of the hard film of the first and second examples described above. By forming the laminated film, a function as a magnetic domain control film of the MR element can be provided.

  As an alternative example, the magnetic domain control of the MR element can be realized even in a structure in which at least one soft film and at least one antiferromagnetic film and a laminated film of ferromagnetic films are laminated.

  Preferably, between the upper soft film 40 and the laminated film of the antiferromagnetic film 51 and the ferromagnetic film 52, and between the laminated film of the antiferromagnetic film 51 and the ferromagnetic film 52 and the lower soft film 41. Each of the nonmagnetic films is formed. Further, preferably, a nonmagnetic insulating film is formed between the MR element 1 and the laminated film 63.

  In the reproducing head according to the embodiment of FIG. 26, it is impossible to achieve both conventionally by the laminated film 63 of the upper soft film 40, the antiferromagnetic film 51 and the ferromagnetic film 52, and the laminated film 63 of the lower soft film 41. As described above, the magnetic domain control of the MR element by the laminated film of the antiferromagnetic film 51 and the ferromagnetic film 52 and the prevention of crosstalk between adjacent tracks by the side shields of the two soft films 40 and 41 can be realized simultaneously. It becomes like this.

  Next, a manufacturing process of the reproducing head according to the third embodiment of the present invention will be described with reference to FIGS.

  FIG. 27 is a perspective view showing a configuration of a main part of the reproducing head according to the embodiment of FIG. 26, and FIG. 28 is a cross-sectional view for explaining a manufacturing process of the reproducing head according to the embodiment.

  In FIG. 27, in order to easily understand the manufacturing process of the reproducing head according to the embodiment of FIG. 26, the uppermost upper shield part 3-1, the lowermost lower shield part 3-2, A schematic structure of the reproducing head 10 in a state in which is removed is shown. Therefore, the structure of the reproducing head 10 in FIG. 27 is the same as the structure of the reproducing head 10 in FIG. 26 described above, except for the shield part 3-1 and the lower shield part 3-2. Therefore, the description of the reproducing head 10 in FIG. 27 is omitted here.

  In the left side view (a) of FIG. 28, a sectional view in the height direction of the MR element at the center of the terminal width of the reproducing head 10 is shown, and in the right front view (b) of FIG. A sectional view in the width direction (track width direction) of the MR element at the center of the terminal width of the read head 10 is shown. The manufacturing process of the reproducing head according to the example of FIG. 26 is described below. However, portions other than the configuration of the soft film, the antiferromagnetic film, and the laminated film of the ferromagnetic film are the same as those in the first embodiment shown in FIGS. .

  In FIG. 28, instead of sequentially forming the lower soft film, the lower nonmagnetic film, the hard film, the upper nonmagnetic film, and the upper soft film, the lower soft film 41, the lower nonmagnetic film 43, A magnetic film 52, an antiferromagnetic film 51, an upper nonmagnetic film 42, and an upper soft film 40 are sequentially formed. In the above structure, the upper soft film 40 may be in electrical and magnetic contact with the upper shield part 3-1. On the other hand, regarding the ferromagnetic film 52 and the antiferromagnetic film 51, the stacking order may be reversed and the lower side may be the antiferromagnetic film 51.

  Further, instead of sequentially forming the lower soft film, the lower nonmagnetic film, the hard film, the upper nonmagnetic film, and the upper soft film, the ferromagnetic film 52, the antiferromagnetic film 51, the upper nonmagnetic film 42, Alternatively, a laminated film including only the upper soft film 40 may be used. Also at this time, the upper soft film 40 may be in electrical and magnetic contact with the upper shield part 3-1.

  FIG. 29 is a perspective view showing a schematic configuration of a first modification of the embodiment of FIG. The reproducing head 10 according to the first modified example of FIG. 29 has a crosstalk between adjacent tracks on both sides in the track width direction (X direction) of the MR element 1 in substantially the same manner as in the embodiment of FIG. A laminated film of an antiferromagnetic film 51 and a ferromagnetic film 52 functioning as a magnetic domain control film is formed between the upper soft film 40 and the lower soft film 41 for suppressing the above. The upper soft film 40, the laminated film of the antiferromagnetic film 51 and the ferromagnetic film 52, and the lower soft film 41 constitute a laminated film 63.

  Further, in the reproducing head 10 according to the first modification example of FIG. 29, the MR element 1 whose resistance value changes due to the magnetic field and the upper shield part 30-1 for shielding the leakage magnetic field from the adjacent track on the storage medium. And the lower shield part 30-2 is formed, but the upper electrode terminal and the lower electrode terminal as shown in the above-mentioned embodiment of FIG. 26 are not formed. In other words, in the first modification of FIG. 29, the upper shield part 30-1 and the lower shield part 30-2 have a structure that also serves as the upper electrode terminal and the lower electrode terminal, respectively. 29 also uses a CPP structure in which a current flows in a direction perpendicular to the plane of the MR element 1 as in the case of the above-described embodiment of FIG.

  According to the first modification of FIG. 29, since it is not necessary to form the upper electrode terminal and the lower electrode terminal, the manufacturing process of the reproducing head can be simplified.

  FIG. 30 is a perspective view showing a schematic configuration of a second modification of the embodiment of FIG. The reproducing head 10 according to the first modification example of FIG. 30 has a crosstalk between adjacent tracks on both sides in the track width direction (X direction) of the MR element 1 in substantially the same manner as in the embodiment of FIG. A laminated film of an antiferromagnetic film 51 and a ferromagnetic film 52 functioning as a magnetic domain control film is formed between the upper soft film 40 and the lower soft film 41 for suppressing the above. The upper soft film 40, the laminated film of the antiferromagnetic film 51 and the ferromagnetic film 52, and the lower soft film 41 constitute a laminated film 63.

  Further, also in the reproducing head 10 according to the second modified example of FIG. 30, the MR element 1 whose resistance value changes due to the magnetic field and the adjacent on the storage medium are substantially similar to the case of the first modified example of FIG. The upper shield part 31-1 and the lower shield part 31-2 for shielding the leakage magnetic field from the track are formed, but the upper electrode terminal and the lower electrode terminal are not formed. In other words, also in the second modified example of FIG. 30, the upper shield part 31-1 and the lower shield part 31-2 have a structure that also serves as the upper electrode terminal and the lower electrode terminal, respectively. 25 also uses a CPP structure in which a current flows in a direction perpendicular to the plane of the MR element 1, as in the case of the above-described embodiment of FIG.

  However, in the second modification example of FIG. 30, unlike the case of the first modification example of FIG. 29 described above, the shape of the upper shield part 31-1 is the same as that of the upper shield part 3-1. And the upper electrode terminal 2-1.

  Therefore, according to the second modification of FIG. 30, the upper shield part can be provided with a shielding function under substantially the same conditions as in the above-described embodiment of FIG. 26, and in a direction perpendicular to the plane of the MR element. Current can flow.

  The present invention is not only applied to a read head having a CPP structure in which a current flows in a direction perpendicular to the plane of the magnetoresistive element, but also a current in-plane to CIP (current in-plane to flow) in the in-plane direction of the MR element. Plane) can be applied to a reproducing head having a structure. Furthermore, the present invention provides a composite thin film magnetic head having a structure in which a magnetoresistive read head and an inductive recording head are integrated, and a magnetic disk device incorporating the composite thin film magnetic head. It can be applied to a magnetic storage device having a recording density.

It is a perspective view which shows schematic structure of the basic Example based on the basic principle of this invention. 1 is a perspective view showing a schematic configuration of a reproducing head according to a first embodiment of the present invention. It is a top view which shows schematic structure of the disc apparatus based on the Example of this invention. 1 is a front view showing a schematic configuration of a composite thin film magnetic head according to an embodiment of the present invention. FIG. 3 is a perspective view showing a configuration of a main part of the reproducing head according to the embodiment of FIG. 2. FIG. 6 is a cross-sectional view (No. 1) for describing a manufacturing process of the reproducing head according to the embodiment of FIG. 2; FIG. 6 is a cross-sectional view (No. 2) for describing a manufacturing process of the reproducing head according to the embodiment of FIG. 2; FIG. 6 is a cross-sectional view (No. 3) for describing a manufacturing process of the reproducing head according to the embodiment of FIG. 2; FIG. 6 is a cross-sectional view (No. 4) for explaining a manufacturing process of the reproducing head according to the embodiment of FIG. 2; FIG. 6 is a cross-sectional view (No. 5) for explaining a manufacturing process of the reproducing head according to the embodiment of FIG. 2; It is a perspective view which shows schematic structure of the 1st modification of the Example of FIG. It is a perspective view which shows schematic structure of the 2nd modification of the Example of FIG. It is a perspective view which shows schematic structure of the 3rd modification of the Example of FIG. It is a perspective view which shows schematic structure of the 4th modification of the Example of FIG. It is a perspective view which shows schematic structure of the 5th modification of the Example of FIG. It is a perspective view which shows schematic structure of the 6th modification of the Example of FIG. It is a perspective view which shows schematic structure of the 7th modification of the Example of FIG. It is a perspective view which shows schematic structure of the 8th modification of the Example of FIG. It is a perspective view which shows schematic structure of the 9th modification of the Example of FIG. It is a perspective view which shows schematic structure of the 10th modification of the Example of FIG. It is a perspective view which shows schematic structure of the reproducing head based on the 2nd Example of this invention. FIG. 22 is a perspective view illustrating a configuration of a main part of the reproducing head according to the embodiment in FIG. 21. FIG. 22 is a cross-sectional view for explaining a manufacturing process of the reproducing head according to the embodiment in FIG. 21; It is a perspective view which shows schematic structure of the 1st modification of the Example of FIG. It is a perspective view which shows schematic structure of the 2nd modification of the Example of FIG. It is a perspective view which shows schematic structure of the reproducing head based on the 3rd Example of this invention. FIG. 27 is a perspective view illustrating a configuration of a main part of the reproducing head according to the embodiment in FIG. 26. FIG. 27 is a cross-sectional view for explaining a manufacturing process of the read head according to the embodiment in FIG. 26; It is a perspective view which shows schematic structure of the 1st modification of the Example of FIG. It is a perspective view which shows schematic structure of the 2nd modification of the Example of FIG. It is a perspective view which shows schematic structure of the reproducing head which concerns on the conventional 1st example. It is a perspective view which shows schematic structure of the reproducing head based on the 2nd example of the past. It is a perspective view which shows schematic structure of the reproducing head which concerns on the conventional 3rd example.

Explanation of symbols

1 Magnetoresistive effect element (MR element)
2-1 Upper electrode terminal 2-2 Lower electrode terminal 3-1 Upper shield part 3-2 Lower shield part 4 Soft magnetic film 5 High coercive force film 6 Laminated part 7-1 Resist 7-1 Insulating film 8-1 Resist 8-2 Insulating film 10 Read head 15 Recording head 18 Composite thin film magnetic head 40 Upper soft film 41 Lower soft film 42 Upper nonmagnetic film 43 Lower nonmagnetic film 50 Hard film 51 Antiferromagnetic film 52 Ferromagnetic film 60 Laminated film 61 Laminated film 62 Laminated film 63 Laminated film 140 Voice coil motor 200 Disk device 201 Disk enclosure 205 Disk 210 Spindle 220 Spindle motor

Claims (10)

A magnetoresistive effect element whose resistance value varies depending on a magnetic field; and a first electrode terminal and a second electrode terminal formed so as to sandwich the magnetoresistive effect element; In a reproducing head that reproduces information of an arbitrary storage area in a storage medium as a magnetic signal by using a change,
A reproduction unit comprising: a laminated portion including a high coercive force film and a soft magnetic film for applying a constant bias magnetic field to the magnetoresistive element in advance at both ends in the width direction of the magnetoresistive element; head.   2. The read head according to claim 1, wherein a nonmagnetic film is formed between the high coercive force film and the soft magnetic film.   3. The read head according to claim 1, wherein the laminated portion has a configuration in which at least one high coercive force film is formed between at least two soft magnetic films.   3. The read head according to claim 1, wherein the laminated portion has a structure in which at least one soft magnetic film and at least one high coercive force film are laminated. A magnetoresistive effect element whose resistance value varies depending on a magnetic field; and a first electrode terminal and a second electrode terminal formed so as to sandwich the magnetoresistive effect element; In a reproducing head that reproduces information of a desired storage area in a storage medium as a magnetic signal using a change,
A laminated film and a soft magnetic film in which an antiferromagnetic film for applying a constant bias magnetic field to the magnetoresistive element in advance and a ferromagnetic film magnetically fixed by the antiferromagnetic film are laminated; A reproducing head comprising: a laminated portion including both ends of the magnetoresistive element in the width direction.   6. The laminated portion is configured such that a nonmagnetic film is formed between the antiferromagnetic film, the laminated film of the ferromagnetic film, and the soft magnetic film. Playhead.   7. The laminated portion is configured such that at least one of the antiferromagnetic film and the laminated film of the ferromagnetic film is formed between at least two soft magnetic films. The described reproduction head.   7. The stacked portion according to claim 5, wherein at least one soft magnetic film, at least one antiferromagnetic film, and the stacked film of the ferromagnetic film are stacked. The described reproduction head.   9. A composite type thin film magnetic comprising a structure in which the reproducing head according to claim 1 and a recording head for recording information in an arbitrary storage area in a storage medium are integrated. head. A composite thin-film magnetic head having a structure in which the reproducing head according to any one of claims 1 to 8 and a recording head for recording information in an arbitrary storage area in a storage medium are integrated;
A disk in which a storage area consisting of a plurality of substantially concentric tracks is formed in the storage medium;
A voice coil motor that drives the composite thin film magnetic head so as to reciprocate between the position of the inner periphery and the position of the outer periphery of the disk;
A spindle motor that rotatably drives the disk;
A disk comprising: a controller for recording information at an arbitrary position of the disk using the composite thin film magnetic head and controlling an operation of reproducing the information recorded at the arbitrary position apparatus.

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