JP2006137060A - Electrostatic attraction type liquid ejection head and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To accurately and stably eject a desired quantity of liquid by accurately controlling the displacement magnitude of a meniscus formed in a nozzle. <P>SOLUTION: This electrostatic attraction type liquid ejection head is so constituted that an ejection voltage is applied and a droplet is ejected from the nozzle 10 selected by electrostatically attractive force, after the meniscus of the nozzle 10 is selectively controlled to form a convex equivalent to/above a certain level by an piezoelectric element 3. The nozzle 10 is composed of a resin substrate 4 and a jointing substrate of a second silicon substrate 5, and a liquid channel for being connected to the nozzle 10 is constituted by joining a first silicon substrate 2 with a groove 13 to the substrate 5. Thus, the liquid channel is constituted in a highly rigid manner by using a silicon material with high Young's modulus; attenuation caused by elastic deformation of the liquid channel due to pressure generated by driving the piezoelectric element 3 is kept at a low level; and the displacement magnitude of the meniscus is controlled with a high degree of accuracy. A material with high volume resistivity is used for the resin substrate 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an electrostatic suction type liquid discharge technique in which a charged liquid is guided to a nozzle tip and discharged by an electrostatic suction force, and in particular, electrostatic suction added with a pressurizing means for controlling a meniscus formed on a nozzle. The present invention relates to a liquid ejection technique.

  Conventionally, as an inkjet recording method, a piezoelectric method in which an ink flow path is deformed by pressure generated by deformation of a piezoelectric material such as PZT, and ink droplets are ejected. A heating element is provided in the ink flow path, and the heating element is caused to generate heat. The thermal method in which bubbles are generated and ink droplets are ejected in response to pressure changes in the ink channels due to the bubbles, and ink droplets are ejected by electrostatic attraction of ink by charging the ink in the ink channels An electrostatic suction method is known.

  Also, as one form of electrostatic attraction method, pressure means such as a piezoelectric body or a heating element is added, and by controlling the meniscus at the nozzle tip, ink flying and non-flying are selected and ink is ejected. There is known a so-called meniscus control method in which a voltage (discharge voltage) for generating an electrostatic attraction force is applied and ink droplets are ejected from a nozzle selected for ink flight (for example, Patent Documents 1 to 3). .

According to the pure electrostatic attraction method that controls ink ejection including selection of ink flight only by changing the electric field, the electrode for controlling ink ejection has a relatively high voltage (for example, several hundred to several thousand volts). A pulse voltage needs to be applied, and a switching element for high voltage is required.
On the other hand, according to the meniscus control type electrostatic attraction method, the control pulse voltage is sufficient to drive the piezoelectric element or the like (for example, several to several tens of volts). There is an advantage that no element is required.
JP-A-5-278212 Japanese National Patent Publication No. 10-501491 JP 2002-127428 A

  In the meniscus control type electrostatic attraction method described above, when the meniscus displacement amount varies from the desired displacement amount, the ink amount to be ejected varies, or the ink is not ejected from the nozzle to be ejected. Therefore, it is important to accurately control the meniscus displacement.

  Accordingly, the present invention provides an electrostatic suction type liquid discharge head capable of accurately controlling the amount of displacement of a meniscus formed in a nozzle and discharging a desired amount of liquid with high accuracy and a manufacturing method thereof. The task is to do.

The invention according to claim 1 for solving the above-described problems is that a composite base material formed by joining a plurality of base materials to a surface that penetrates the plurality of base materials and faces the discharge port and the inflow port. A nozzle forming substrate formed with a nozzle to be opened; and
A groove-forming substrate having grooves formed on at least one surface;
The surface of the nozzle forming substrate on which the inlet is opened and the surface of the groove forming substrate on which the groove is formed are joined to connect the inlet and the surface on which the inlet opens and the groove. A liquid channel is formed,
An electrode for charging the liquid in the nozzle, and a pressurizing means for controlling the meniscus formed in the nozzle by pressurizing the liquid in the liquid flow path,
An electrostatic suction type liquid discharge head characterized in that at least the base material in which the inflow port is opened and the groove forming base material of the composite base material are made of a material having a Young's modulus of 50 [GPa] or more. .

  Therefore, according to the first aspect of the present invention, the nozzle forming base material is composed of a composite base material formed by joining a plurality of base materials, and the base material in which the nozzle inlet and the groove forming base material are open are Young's modulus. Since it is made of a material of 50 [GPa] or more, the liquid flow path is configured with high rigidity, and attenuation due to elastic deformation of the pressure of the liquid flow path generated by the pressurizing means can be suppressed to a low level. Can be controlled with high accuracy. On the other hand, the rigidity of the liquid channel is not lowered even if the material of the base material through which the discharge port of the nozzle opens is freely selected. As a material having a Young's modulus of 50 [GPa] or more, for example, silicon or glass can be applied.

The invention described in claim 2 is such that a composite base material formed by joining a plurality of base materials is formed with a nozzle that penetrates the plurality of base materials and opens the discharge port and the inflow port on opposite surfaces. A nozzle forming substrate;
A groove-forming substrate having grooves formed on at least one surface;
The surface of the nozzle forming substrate on which the inlet is opened and the surface of the groove forming substrate on which the groove is formed are joined to connect the inlet and the surface on which the inlet opens and the groove. A liquid channel is formed,
An electrode for charging the liquid in the nozzle, and a pressurizing means for controlling the meniscus formed in the nozzle by pressurizing the liquid in the liquid flow path,
The Young's modulus of the base material in which the inflow opening constituting the composite base material opens and the groove forming base material is higher than the Young's modulus of the base material in which the discharge port constituting the composite base material opens,
The electrostatic attraction characterized in that the volume resistivity of the substrate opening the discharge port constituting the composite substrate is higher than the volume resistivity of the substrate opening the inlet forming the composite substrate. This is a liquid discharge head.

  Therefore, according to the invention described in claim 2, the nozzle forming base material is composed of a composite base material formed by joining a plurality of base materials, and the Young's modulus of the base material and the groove forming base material in which the nozzle inlet is opened. Is higher than the Young's modulus of the base material where the nozzle outlet opens, and the volume resistivity of the base material where the nozzle outlet opens is higher than the volume resistivity of the base material where the nozzle inlet opens. The insulating property on the nozzle tip side can be enhanced while the flow path is configured with high rigidity. As a result, the attenuation due to the elastic deformation of the liquid flow path of the pressure generated by the pressurizing means can be suppressed to a low level, the meniscus displacement amount can be controlled with high accuracy, and the electric field strength is concentrated in the liquid of the meniscus forming portion. And sufficient electrostatic attraction force which discharges the liquid of a meniscus formation part reliably can be generated. Therefore, a desired amount of liquid can be discharged accurately and stably.

According to a third aspect of the present invention, in the electrostatic suction type liquid discharge head according to the first or second aspect, the substrate on which the discharge port constituting the composite substrate is opened is made of a resin material. is there.

  Therefore, according to the third aspect of the present invention, among the resin materials as the material of the base material through which the nozzle outlet is opened, a highly insulating material, a material that can be finely processed, a material having high water repellency and erosion resistance A material having desired characteristics such as a material excellent in mass productivity and low cost can be selected.

According to a fourth aspect of the present invention, the base material in which the inflow opening constituting the composite base material is opened and the groove forming base material are both made of a silicon material and bonded by anodic bonding via a glass thin film. The electrostatic attraction type liquid discharge head according to claim 1, 2, or 3.

  Therefore, according to the invention described in claim 4, since the base material in which the inlet of the nozzle is opened and the groove forming base material are made of silicon material and are joined by anodic bonding through the glass thin film, Is configured to be highly rigid, and the meniscus can be controlled with high accuracy. In addition, since a glass thin film is formed without using an adhesive and anodic bonding is performed, there is no problem of overflowing into the liquid flow path and incompatibility with the liquid to be discharged as in the case of using an adhesive.

According to a fifth aspect of the present invention, the base material in which the inflow opening constituting the composite base material opens is made of a glass material, the groove forming base material is made of a silicon material, and both the base materials are joined by anodic bonding. The electrostatic attraction type liquid discharge head according to claim 1, 2, or 3.

  Therefore, according to the fifth aspect of the present invention, the base material through which the nozzle inlet opens is made of glass material, the groove forming base material is made of silicon material, and both the base materials are joined by anodic bonding. The liquid flow path is configured with high rigidity, and the meniscus can be controlled with high accuracy. Further, since anodic bonding is performed without using an adhesive, there is no problem of overflowing into the liquid flow path and incompatibility with the liquid to be discharged, as in the case of using an adhesive. Moreover, since the former board | substrate is a glass material, there is no effort of forming a glass thin film in order to perform anodic bonding.

The invention according to claim 6 is a nozzle-forming substrate in which a nozzle that opens a discharge port and an inflow port on a surface facing each other is formed on a single substrate,
A groove-forming substrate having grooves formed on at least one surface;
The surface of the nozzle forming substrate on which the inlet is opened and the surface of the groove forming substrate on which the groove is formed are joined to connect the inlet and the surface on which the inlet opens and the groove. A liquid channel is formed,
An electrode for charging the liquid in the nozzle, and a pressurizing means for controlling the meniscus formed in the nozzle by pressurizing the liquid in the liquid flow path,
The electrostatic suction type liquid discharge head is characterized in that the single base material and the groove forming base material are made of a material having a Young's modulus of 50 [GPa] or more.

  Therefore, according to the invention of claim 6, the nozzle forming base material is constituted by a single base material, and the single base material and the groove forming base material are constituted by a material having a Young's modulus of 50 [GPa] or more. Therefore, the liquid flow path is configured with high rigidity, the attenuation due to the elastic deformation of the liquid flow path of the pressure generated by the pressurizing means can be suppressed to a low level, and the displacement amount of the meniscus can be controlled with high accuracy. .

  The invention according to claim 7 is the electrostatic suction type liquid discharge head according to claim 6, wherein the discharge port is opened at a tip of a convex portion formed on the nozzle forming substrate. .

  Therefore, according to the seventh aspect of the present invention, the electric field strength is concentrated on the liquid at the meniscus forming portion at the protruding nozzle tip, and a sufficient electrostatic attraction force for reliably discharging the liquid at the meniscus forming portion can be generated. .

  The invention according to claim 8 is characterized in that the single base material and the groove forming base material are both made of a silicon material and joined by anodic bonding through a glass thin film. The electrostatic attraction type liquid discharge head according to claim 7.

  Therefore, according to the eighth aspect of the invention, the nozzle forming base material and the groove forming base material are made of a silicon material, and are joined by anodic bonding through a glass thin film, so that the liquid flow path has a high rigidity. Thus, the meniscus can be controlled with high accuracy. In addition, since a glass thin film is formed without using an adhesive and anodic bonding is performed, there is no problem of overflowing into the liquid flow path and incompatibility with the liquid to be discharged as in the case of using an adhesive.

  The invention according to claim 9 is characterized in that a pattern for alignment is formed on each of the two substrates to be joined to each other. This is an electrostatic suction type liquid discharge head.

Therefore, according to the ninth aspect of the invention, the alignment pattern formed on each of the two substrates to be bonded to each other can be quickly and accurately aligned at the time of bonding the two substrates. it can.
As the alignment pattern, a through hole is preferable. By inserting and fitting pins into the alignment through holes of both base materials, the alignment is completed quickly and reliably.

  The invention according to claim 10 is characterized in that a part of the liquid flow path is formed of a thin film, and the pressurizing means changes the volume of the liquid flow path by deforming the thin film. The electrostatic attraction type liquid discharge head according to any one of claims 1 to 9.

  Therefore, according to the tenth aspect of the present invention, the attenuation due to the elastic deformation of the liquid flow path caused by the deformation of the thin film can be suppressed to a low level, and the displacement amount of the meniscus can be controlled with high accuracy.

  An eleventh aspect of the invention is the electrostatic suction type liquid discharge head according to the tenth aspect, wherein the thin film is constituted by a portion where the groove forming base material is thinned by etching. .

  Therefore, according to the invention of claim 11, since the thin film of the pressurizing means is constituted by the portion where the groove forming substrate is thinned by etching, the thin film does not go through other materials such as an adhesive layer, It is formed of the same material continuously on the other inner wall of the liquid flow path, and is formed uniformly by etching without affecting the thickness of other materials such as the adhesive layer. The level can be suppressed to a low level, and the amount of meniscus displacement can be controlled with high accuracy.

  The invention according to claim 12 is characterized in that the thin film is composed of a metal thin film formed by electroforming on the groove forming base material. Head.

  Therefore, according to the twelfth aspect of the present invention, a thin film with high film thickness accuracy can be formed by electroforming, and the generated pressure is controlled with high accuracy by the thin film with high film thickness accuracy, and the amount of meniscus displacement is increased. The accuracy can be controlled.

  A thirteenth aspect of the invention is the electrostatic attraction type liquid discharge head according to any one of the first to twelfth aspects, wherein the pressurizing means is a piezoelectric element.

  Therefore, according to the thirteenth aspect of the present invention, the attenuation due to the elastic deformation of the liquid flow path of the pressure generated by driving the piezoelectric element can be suppressed to a low level, and the displacement amount of the meniscus can be controlled with high accuracy. .

  A fourteenth aspect of the invention is the electrostatic suction type liquid discharge head according to any one of the first to thirteenth aspects, wherein the discharge port is 20 [μm] or less.

  Therefore, according to the fourteenth aspect of the invention, since the diameter of the nozzle discharge port is 20 [μm] or less, when the liquid of the raised meniscus forming portion is caused to fly by electrostatic attraction force, It will be advantageous.

  The electrostatic suction method according to any one of claims 1 to 14, wherein the inlet has a diameter of 50 [μm] or more and 100 [μm] or less. A liquid discharge head;

Therefore, according to the fifteenth aspect of the present invention, since the nozzle inlet has a diameter of 50 [μm] or more, the pressure loss of the nozzle channel does not increase, and a meniscus can be formed even with a relatively high viscosity liquid. .
Further, since the nozzle inlet diameter is 100 [μm] or less, the liquid flow path before the inlet is maintained at a constant high rigidity, and the generated pressure due to elastic deformation of the liquid flow path is suppressed to a low level, The amount of meniscus displacement can be controlled with high accuracy.

  The invention according to claim 16 is characterized in that the thickness of the base material through which the inflow opening opens is 50 [μm] or more and 200 [μm] or less. This is an electrostatic suction type liquid discharge head.

Therefore, according to the invention described in claim 16, since the thickness of the base material through which the inlet of the nozzle opens is 50 [μm] or more, the liquid channel becomes sufficiently rigid, and due to elastic deformation of the liquid channel. Attenuation of the generated pressure can be suppressed to a low level, and the amount of meniscus displacement can be controlled with high accuracy.
Moreover, since the thickness of the base material through which the nozzle inlet opens is 200 [μm] or less, the pressure loss in the nozzle flow path does not increase, and a meniscus can be formed even with a relatively high viscosity liquid.

  Next, an advantageous manufacturing method for manufacturing the above electrostatic suction type liquid discharge head of the present invention will be disclosed.

The invention according to claim 17 is a groove forming step of forming a groove in the first silicon substrate by etching,
A through hole forming step of forming a through hole in the second silicon substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by molding a resin material;
The surface of the second silicon substrate and the opening of the through hole of the second silicon substrate are aligned with the groove, and the first silicon substrate and the second silicon substrate are joined and connected to the opening. A flow path assembly process for assembling a liquid flow path;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step of assembling a nozzle by joining the second silicon base material and the resin base material and connecting through holes to each other. .

The invention according to claim 18 is a groove forming step of forming grooves in the first silicon substrate by etching,
A through hole forming step of forming a through hole in the second silicon substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by a photolithography technique for optically processing the photosensitive resin material;
The surface of the second silicon substrate and the opening of the through hole of the second silicon substrate are aligned with the groove, and the first silicon substrate and the second silicon substrate are joined and connected to the opening. A flow path assembly process for assembling a liquid flow path;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step of assembling a nozzle by joining the second silicon base material and the resin base material and connecting through holes to each other. .

The invention according to claim 19 is a groove forming step of forming a groove on the first silicon substrate by etching,
A through hole forming step of forming a through hole in the second silicon substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by laser drilling a resin material;
The surface of the second silicon substrate and the opening of the through hole of the second silicon substrate are aligned with the groove, and the first silicon substrate and the second silicon substrate are joined and connected to the opening. A flow path assembly process for assembling a liquid flow path;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step of assembling a nozzle by joining the second silicon base material and the resin base material and connecting through holes to each other. .

The invention according to claim 20 is a groove forming step of forming a groove in the first silicon substrate by etching,
A nozzle forming step of forming a nozzle that opens a discharge port at a convex portion and a tip of the convex portion by etching in the second silicon substrate, and opens an inflow port on the opposite side of the convex portion;
A liquid flow that joins the first silicon substrate and the second silicon substrate together with the surface of the second silicon substrate and the inlet of the second silicon substrate in the groove, and connects to the nozzle. And a flow path assembling step for assembling a path.

  The invention according to claim 21 is characterized in that the first silicon substrate and the second silicon substrate are bonded by an anodic bonding method by forming a glass thin film on one of the bonding surfaces. It is a manufacturing method of the electrostatic attraction type liquid discharge head according to any one of 17 to 20.

The invention according to claim 22 is a groove forming step of forming a groove in the first silicon substrate by etching,
A through hole forming step of forming a through hole in the glass substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by molding a resin material;
A flow for assembling a liquid flow path connecting the first silicon substrate and the glass substrate by aligning the surface of the glass substrate and the opening of the through hole of the glass substrate in the groove and joining the first silicon substrate and the glass substrate. Road assembly process;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step in which the glass base material and the resin base material are joined and the through holes are connected to each other to assemble a nozzle.

The invention according to claim 23 is a groove forming step of forming a groove in the first silicon substrate by etching,
A through hole forming step of forming a through hole in the glass substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by a photolithography technique for optically processing the photosensitive resin material;
A flow for assembling a liquid flow path connecting the first silicon substrate and the glass substrate by aligning the surface of the glass substrate and the opening of the through hole of the glass substrate in the groove and joining the first silicon substrate and the glass substrate. Road assembly process;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step in which the glass base material and the resin base material are joined and the through holes are connected to each other to assemble a nozzle.

The invention according to claim 24 is a groove forming step of forming a groove in the first silicon substrate by etching,
A through hole forming step of forming a through hole in the glass substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by laser drilling a resin material;
A flow for assembling a liquid flow path connecting the first silicon substrate and the glass substrate by aligning the surface of the glass substrate and the opening of the through hole of the glass substrate in the groove and joining the first silicon substrate and the glass substrate. Road assembly process;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step in which the glass base material and the resin base material are joined and the through holes are connected to each other to assemble a nozzle.

  The invention described in claim 25 is characterized in that the first silicon substrate and the glass substrate are bonded by an anodic bonding method. This is a method for manufacturing an electro-suction liquid discharge head.

The invention according to claim 26 is characterized in that in the groove forming step, a part of the bottom of the groove is made thinner than the surrounding to form a thin film,
26. The method of manufacturing an electrostatic attraction type liquid discharge head according to claim 17, further comprising a step of disposing a piezoelectric element on the thin film.

The invention described in claim 27 has a step of forming a metal thin film on the first silicon substrate by electroforming before the groove forming step, and the metal thin film is formed in the groove forming step. Etching the groove from the opposite side of the surface, exposing a part of the metal thin film at a part of the bottom of the groove,
26. The method of manufacturing an electrostatic attraction type liquid discharge head according to claim 17, further comprising a step of disposing a piezoelectric element on the metal thin film.

  As described above, according to the present invention, the attenuation due to the elastic deformation of the liquid flow path of the pressure generated by the pressurizing means can be suppressed to a low level, and the displacement amount of the meniscus formed in the nozzle is accurately controlled, There is an effect that a desired amount of liquid can be discharged accurately and stably. Moreover, according to the manufacturing method of the electrostatic attraction type liquid discharge head of the present invention, there is an effect that such an electrostatic attraction type liquid discharge head can be advantageously manufactured.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The following is one embodiment of the present invention and does not limit the present invention.

[First Embodiment]
First, a first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a sectional view showing an electrostatic suction type liquid discharge head according to a first embodiment of the present invention.
As shown in FIG. 1, the electrostatic suction liquid discharge head of this embodiment includes a nozzle forming base material 1, a groove forming base material 2, and a piezoelectric element 3.
The nozzle forming substrate 1 is a composite substrate in which a resin substrate 4 and a second silicon substrate 5 are joined. A through hole 6 is provided in the resin base material 4. The inner diameter of the through hole 6 of the resin base material 4 is constant in the axial direction. The second silicon substrate 5 is provided with a through hole 7. The inner diameter of the through hole 7 of the second silicon base material 5 is constant in the axial direction and is larger than the inner diameter of the through hole 6 of the resin base material 4.

An electrode film 8 is formed on the joint surface of the resin substrate 4 with the second silicon substrate 5 and the inner surface of the through hole 6.
The through hole 6 of the resin base material 4 and the through hole 7 of the second silicon base material 5 are arranged coaxially, and the resin base material 4 and the second silicon base material 5 are bonded via the adhesive layer 9. . A nozzle 10 is constituted by the through hole 6 of the resin base material 4 and the through hole 7 of the second silicon base material 5. The nozzle 10 takes in the liquid from the inlet 11 and discharges the liquid from the outlet 12.

  The electrode film 8 formed around the through hole 6 is exposed in the nozzle 10 in the range inside the through hole 7. Further, the electrode film 8 formed on the inner surface of the through hole 6 is also exposed in the nozzle 10. The electrode film 8 is brought into contact with and charged by the liquid supplied to the nozzle 10 by a portion exposed in these nozzles. In order to ensure the contact between the electrode film 8 and the liquid, it is preferable to form the electrode film 8 up to the inner surface of the through hole 6 as in the present embodiment. Even when the electrode film 8 is not formed on the inner surface of the through hole 6, by making the through hole 7 larger in diameter than the through hole 6, the electrode film 8 is exposed at the nozzle step portion, and the contact surface of the electrode film 8 with respect to the liquid is formed. Can be bigger.

  The groove forming substrate 2 is a silicon substrate and corresponds to the first silicon substrate in the production method of the present invention. Grooves 13 are formed on the surface of the groove forming substrate 2 to be bonded to the second silicon substrate 5. The groove forming substrate 2 and the second silicon substrate 5 are bonded by an anodic bonding method through a glass thin film 14, and the liquid pressurizing chamber is formed by the groove 13 and the surface where the inlet 11 of the second silicon substrate 5 opens. A liquid flow path including 15 is formed.

One end of the liquid flow path is constituted by the liquid pressurizing chamber 15 and is formed up to the liquid supply port at the other end (not shown). The liquid pressurizing chamber 15 is disposed immediately before the inlet 11 of the nozzle 10 and is a part of a flow path for supplying liquid to the nozzle 10. Further, the bottom of the liquid pressurizing chamber 15 facing the inflow port 11 is composed of a thin film 16. The piezoelectric element 3 is attached to the surface of the thin film 16 on the outer side of the liquid pressurizing chamber 15, and the thin film 16 is deformed by driving the piezoelectric element 3 to change the volume of the liquid pressurizing chamber 15. The meniscus formed in the nozzle 10 is changed by the volume change of the liquid pressurizing chamber 15.
As the piezoelectric element 3, PZT which is frequently used for an ink jet head which discharges only by applying pressure may be used. However, in the case of an electrostatic suction type liquid discharge head, the discharge force is mainly generated by the electrostatic suction force. Since the piezoelectric element 3 only needs to generate a pressure sufficient to control the meniscus, a piezoelectric material having a piezoelectric constant lower than that of PZT may be applied as the piezoelectric element 3.

The diameter of the discharge port 12 is set to 20 [μm] or less because of the flying of a fine droplet. The diameter of the inlet 11 is 50 [μm] or more and 100 [μm] or less. In the present embodiment, the diameter of the through hole 6 is set to 20 [μm] or less, and the diameter of the through hole 7 is set to 50 [μm] or more and 100 [μm] or less.
Regardless of the embodiment, the through hole 6 and / or the through hole 7 may be formed in a tapered shape in which the area decreases as the cross section approaches the discharge port 12. In the connecting portion between the through hole 6 and the through hole 7, the diameter of the through hole 7 is the same as or larger than the diameter of the through hole 6.

The material of the resin base material 4 can be selected from Table 1, for example, and the thickness d2 is set to 150 [μm] as shown in Table 1, for example. Table 1 shows the Young's modulus and volume resistivity of each resin material.
The second silicon substrate 5 can be made of borosilicate glass as a material instead of silicon, and any material can be arbitrarily combined with the resin materials shown in Table 1. The thickness d1 is preferably 50 [μm] or more and 200 [μm] or less, and is set to 100 [μm] as shown in Table 2, for example. The Young's modulus of each material is as shown in Table 2.
Also for the groove forming substrate (first silicon substrate) 2, borosilicate glass may be applied as a material instead of silicon. The groove forming substrate (first silicon substrate) 2 and the second silicon substrate 5 are preferably made of a material having a high Young's modulus in order to make the liquid flow path highly rigid, and a material having a Young's modulus of 50 [GPa] or more is applied. .

In order to configure the liquid flow path with high rigidity, the Young's modulus of the material applied to the groove forming substrate (first silicon substrate) 2 and the second silicon substrate 5 is preferably 50 [GPa] or more.
Since the liquid flow path is configured with high rigidity by the groove forming base material (first silicon base material) 2 and the second silicon base material 5, the insulation is given priority mainly as the base material on the head surface side. Resin substrate 4 is used as in the form. In addition, by using a resin material, diversification of manufacturing methods, improvement in productivity, and cost reduction can be achieved.
Materials having low electrical conductivity to be applied to the resin base material 4 include polyimide resin, polyethylene terephthalate resin (PET), polysulfone resin, tetrafluoroethylene resin, polyethylene, phenol resin, epoxy resin, polypropylene resin, fluorine Examples thereof include resin, polyethylene-2, 6-naphthalenedicarboxylate resin (PEN), polyester resin, polyethersulfone, and polyphenylene oxide resin (PPO).

  This electrostatic suction type liquid discharge head is a multi-nozzle head provided with a large number of configurations of the nozzle 10, the liquid pressurizing chamber 15, and the piezoelectric element 3. The recording substrate is held on a counter electrode plate (not shown), and the ink ejection operation is performed as follows.

The liquid to be discharged is supplied to each nozzle 10 through the liquid flow path. The liquid that has entered the nozzle 10 comes into contact with the electrode film 8 and is charged.
In a state where the voltage between the electrode film 8 and the counter electrode is lower than a predetermined discharge voltage, the meniscus formed in the nozzle that drives the piezoelectric element 3 to perform the discharge operation is controlled to be convex so as to fly under the discharge voltage. The meniscus formed on the nozzle that is not ejected is controlled to a level that does not fly under the ejection voltage. Then, a discharge voltage is applied between the electrode film 8 and the counter electrode, and droplets are discharged from the nozzle selected as the nozzle to be discharged by electrostatic attraction, and land on the recording substrate on the counter electrode. Let As described above, droplets are selectively ejected from multiple nozzles.

  In producing the electrostatic suction type liquid ejection head of this embodiment, the following method is applied.

As a method of forming the through-hole 6 in the resin base material 4, (1) a method of laser perforating a film-like resin material, and (2) the entire resin base material 4 including the through-hole 6 portion using a mold. And (3) a method of forming the through-hole 6 by a photolithography technique using a photosensitive resin (photoresist).
A plurality of methods may be combined to form a through hole in the resin material. For example, a method may be used in which a concave portion is formed in a resin material by molding, and a through hole is formed by laser drilling in the concave portion.

  The groove 13 and the through hole 7 are formed by selective etching using a photolithography technique. As an etching method, dry etching is preferable. Since the space in the groove 13 becomes the space in the liquid channel as it is, the groove 13 is formed in the shape of the liquid channel to be manufactured.

  After the step of forming the groove 13, the thin film 16 at the bottom of the groove 13 is etched by etching a portion of the first silicon substrate 2 to which the piezoelectric element 3 opposite to the surface on which the groove 13 is formed is attached. The thin film is formed to a desired thickness. Alternatively, the thin film 16 may be formed by specially etching only the bottom of the groove 13 to which the piezoelectric element 3 is attached and deepening deeper than the others. Both of the two methods may be performed.

  After the through hole 6 is formed in the resin base material 4 and before the resin base material 4 and the second silicon base material 5 are joined, the surface of the resin base material 4 to be joined to the second silicon base material 5 and the through hole An electrode film 8 is formed in 6. A conductive thin film is formed by vapor deposition, sputtering, CVD, or the like, and this is used as an electrode film 8.

  After the electrode film 8 is formed on the resin base material 4, the resin base material 4 and the second silicon base material 5 are joined via the adhesive layer 9. At the time of this joining, by aligning the axes of the through hole 6 and the through hole 7, the through hole 6 and the through hole 7 are connected to assemble the nozzle 10. As shown in FIG. 2, the alignment of the base materials 4 and 5 to be joined is performed in advance by aligning through holes 17 and 18 for alignment at the edges, four corners, etc. of the base materials 4 and 5 (two or more in total). It is formed by inserting one pin into the corresponding through hole 17 and through hole 18 at the same time.

Bonding of the groove forming substrate 2 and the second silicon substrate 5 is performed by the following anodic bonding method. Since one of the surfaces to be bonded needs to be glass in the anodic bonding method, a glass thin film 14 of borosilicate glass having a thickness of 2 [μm] is first formed on one of the surfaces to be bonded by sputtering or CVD. . Subsequently, both base materials 2 and 5 are brought into contact with each other through the glass thin film 14. At this time, as shown in FIG. 2, the alignment of the base materials 2 and 5 is performed in advance by positioning the through holes 17 and 18 for alignment at the edges, four corners, etc. of the base materials 2 and 5 (two or more in total). It is formed by inserting one pin into the corresponding through hole 17 and through hole 18 at the same time. By heating both base materials 2 and 5 to 350 ° C. to 450 ° C. in a state where they are in contact with each other through the glass thin film 14, both voltages are applied by applying a voltage just before a leakage current flows between the base materials 2 and 5. The base materials 2 and 5 are joined.
When at least one of the base materials 2 and 5 is made of a glass material, the step of forming the glass thin film 14 is omitted.
By joining the groove forming substrate 2 and the second silicon substrate 5, the liquid flow path connected to the nozzle 10 is assembled.
After the assembly of the liquid flow path, the piezoelectric element 3 is attached to the thin film 16.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a sectional view showing an electrostatic suction type liquid discharge head according to a second embodiment of the present invention.
As shown in FIG. 3, the electrostatic attraction type liquid discharge head of this embodiment is different from the first embodiment in that a thin film as a component of a liquid flow path and a pressurizing means is made of a metal thin film by a Ni electroformed film 19. The other points are the same as those in the first embodiment.

A method for forming a metal thin film will be described.
First, before forming the groove 13 on the groove forming substrate 2, the conductive thin film 90 is formed on one surface of the groove forming substrate 2 by vapor deposition, sputtering, CVD, or the like. Next, the Ni electroformed film 19 is formed by electroforming using the conductive thin film 90 as an electrode. Next, silicon is dry-etched from the surface opposite to the surface on which the Ni electroformed film 19 is formed, and the groove 13 is continuously formed until the Ni electroformed film 19 is reached. A portion constituting the bottom of the groove 13 of the Ni electroformed film 19 is a component of the liquid flow path and the pressurizing means. The piezoelectric element 3 is disposed in this portion.

[Third Embodiment]
Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 4 is a cross-sectional view showing an electrostatic suction type liquid discharge head according to a third embodiment of the present invention.
As shown in FIG. 4, the electrostatic suction type liquid discharge head of the present embodiment excludes the resin base material 4, the electrode film 8, and the adhesive layer 9 from the first embodiment, and the second silicon base material. The nozzle 21 is formed only by 20 and the electrode film 25 is formed on the surface, and other configurations are the same as those in the first embodiment. That is, the nozzle forming base material is constituted only by the second silicon base material 20.

A method for forming the second silicon substrate 20 will be described.
The photolithography technique is used to dry-etch and remove the material around the portion where the convex portion 22 is formed, and dry-etch the through-hole penetrating from the tip of the convex portion 22 to the opposite surface of the convex portion 22, This is the nozzle 21.
Thereafter, a conductive thin film is formed on the surface of the second silicon substrate 20 on which the convex portions 22 are formed by vapor deposition, sputtering, CVD, or the like, and this is used as an electrode film 25. In order to ensure contact between the electrode film 25 and the liquid, the electrode film 25 is formed so as to extend from the tip of the convex portion 22 to the inner surface of the nozzle 21.
Thereafter, as in the first embodiment, the second silicon substrate 20 is anodically bonded to the first silicon substrate 2 via the glass thin film 14.

The produced second silicon substrate 20 is formed with a convex portion 22 and a nozzle 21 that opens a discharge port 24 at the tip of the convex portion 22.
The nozzle 21 of the present embodiment is a nozzle having a constant cross section from the inlet 23 to the outlet 24, and is set to have an arbitrary diameter.
Regardless of this embodiment, the nozzle 21 may be formed in a tapered shape in which the area decreases as the cross section approaches the discharge port 24. In this case, the discharge port 24 can be 20 [μm] or less, and the diameter of the inflow port 11 can be 50 [μm] or more and 100 [μm] or less.
Preferably, the thickness of the base material to be set to 50 [μm] or more and 200 [μm] or less is the thickness d1 of the second silicon base material 20 excluding the convex portion 22.

[Fourth Embodiment]
Next, a fourth embodiment of the present invention will be described with reference to FIG. FIG. 5 is a cross-sectional view showing an electrostatic suction type liquid discharge head according to a fourth embodiment of the present invention.
As shown in FIG. 5, the electrostatic attraction type liquid discharge head of this embodiment is different from the third embodiment in that a thin film as a component of the liquid flow path and the pressurizing means is made of a metal thin film by a Ni electroformed film 19. The other points are the same as in the third embodiment. The metal thin film is formed in the same manner as in the second embodiment.

[Fifth Embodiment]
Next, a fifth embodiment of the present invention will be described with reference to FIGS. This embodiment belongs to the same category as the first embodiment among the four classifications of the first to fourth embodiments.
The following describes the manufacturing process. 6 and 7 are cross-sectional views showing a process for forming a second silicon substrate according to the fifth embodiment of the present invention. 8 and 9 are cross-sectional views showing a first silicon substrate forming step according to the fifth embodiment of the present invention. FIG. 10 is a sectional view showing the assembly process of the fifth embodiment of the present invention.

[Second silicon substrate forming step]
First, as shown in FIG. 6A, oxide films 31 and 32 are formed on the front and back of the silicon substrate 30. At this time, a step of forming an oxide film by a thermal oxidation method or the like by masking with a resist mask by a photolithography technique is performed in two stages to form an opening 33 and an oxide film 31 having a two-stage structure. The oxide film 32 is formed on the entire surface.

  Next, as shown in FIG. 6B, the surface of the silicon substrate 30 is etched through the opening 33 by the ICP (Inductively Coupled Plasma) method using the oxide films 31 and 32 as a mask, and the back surface. Digging to a predetermined depth that does not reach.

  Next, as shown in FIG. 6C, the silicon oxide of the oxide film 31 is removed by reactive ion etching until the oxide film 31 becomes one stage. As a result, an opening 34 is formed in the oxide film 31.

  Next, as shown in FIG. 7 (4), silicon is etched through the openings 33 and 34 by the ICP method using the oxide films 31 and 32 as a mask, and dug until the bottom of the opening 33 penetrates.

Next, as shown in FIG. 7 (5), the oxide films 31 and 32 are removed by reactive ion etching, and then the silicon substrate 30 is coated with TEOS (not shown) as a surface treatment. Used as a silicon substrate.
The second silicon substrate 35 produced as described above has a through hole 36 that becomes a part of the nozzle and an adhesive retaining hole 37.

[Groove forming substrate (first silicon substrate) forming step]
On the other hand, oxide films 41 and 42 are formed on the front and back of the silicon substrate 40 as shown in FIG. At this time, a process of forming an oxide film by a thermal oxidation method or the like by masking with a resist mask by a photolithography technique is performed in two stages to form an oxide film 41 having openings 43 to 45 and a two-stage structure. Openings 46 and 47 are formed in the oxide film 42.

  Next, as shown in FIG. 8B, using the oxide film 41 as a mask, the surface of the silicon substrate 40 is etched through the openings 43 to 45 by the ICP method, and is dug down to a predetermined depth that does not reach the back surface.

  Next, as shown in FIG. 8C, the silicon oxide of the oxide film 41 is removed by reactive ion etching until the oxide film 41 becomes one stage. As a result, openings 48 and 49 are formed in the oxide film 41.

  Next, as shown in FIG. 8 (4), the resist mask 50 masks the corner mark 51 of the dicing line formed in the step of FIG. 8 (2), and then opens the opening by the ICP method using the oxide film 41 as a mask. The surface of the silicon substrate 40 is etched through the portions 44, 45, 48, and 49, and further dug down to a predetermined depth that does not reach the back surface.

  Next, as shown in FIG. 9 (5), the back surface of the silicon substrate 40 is etched through the openings 46 and 47 by the ICP method using the oxide film 42 as a mask, and the steps of FIGS. It digs and penetrates until it reaches the hole below the back surface openings 44 and 45 dug down. At this time, the holes below the openings 48 and 49 dug down in the process of FIG.

  Next, as shown in FIG. 9 (6), the oxide films 31 and 32 are removed by reactive ion etching, and then the silicon substrate 40 is coated with TEOS as a surface treatment, and a TEOS coat (not shown) is used as a base. As above, Tempax that forms the glass thin film 52 for bonding is coated. This is used as the first silicon substrate 53.

  The first silicon substrate 53 manufactured as described above includes a plurality of liquid flow channel grooves 55, 55... Having a pressurizing thin film 54 formed at the bottom, and a plurality of liquid flow channel grooves 55. , 55... Are joined, a through hole 57 for alignment, a through hole 58 for detecting a piezoelectric element installation position, and a corner mark 51 of a dicing line.

[Head assembly process]
The electrostatic suction type of the present embodiment is composed of the first silicon substrate 53 and the second silicon substrate 35 manufactured as described above, and the resin substrate 60 having a through hole 61 that is a separately formed nozzle tip. Assemble the liquid discharge head. An electrode metal film 62 is formed on the resin substrate 60.

  As shown in FIG. 10 (1), the second silicon substrate 35 is arranged on the first silicon substrate 53 so that the through hole 36 is arranged on the liquid flow channel groove 55. In a state where both base materials 35 and 53 are brought into contact with each other through the glass thin film 52, the base material 35 is heated to 350 ° C. to 450 ° C., and a voltage just before a leakage current flows between the base materials 35 and 53 is applied. 35 and 53 are anodically bonded.

  On the other hand, as shown in FIG. 10 (2), the resin base material 60 is disposed on the second silicon base material 35 with an adhesive so that the through hole 61 is disposed on the through hole 36. Thereby, both base materials 35 and 60 are joined via the adhesive layer 63. At the time of bonding, excess adhesive flows into the adhesive stop hole 37 formed so as to surround the through hole 36, thereby preventing the adhesive from flowing into the through holes 36 and 61. As a result, the liquid to be discharged is not adversely affected by the adhesive.

  Finally, the piezoelectric element 3 is attached to the thin film 54. The attachment of the piezoelectric element 3 includes electrode patterning for driving the piezoelectric element and pasting of the piezoelectric element. Thereafter, necessary wiring connection and packaging are performed.

[Sixth Embodiment]
Next, a sixth embodiment of the present invention will be described with reference to FIGS. This embodiment belongs to the same category as the third embodiment among the four classifications of the first to fourth embodiments.
The following describes the manufacturing process. FIGS. 11-13 is sectional drawing which shows the formation process of the nozzle formation base material (2nd silicon base material) of 6th Embodiment of this invention.

  First, as shown in FIG. 11 (1), oxide films 71 a, 71 b, 72 are formed on the front and back of the silicon substrate 70. At this time, an oxide film 71b is made thinner than the oxide film 71a by masking with a resist mask by a photolithography technique and forming an oxide film by a thermal oxidation method or the like, and an opening surrounding the oxide film 71b 73 is formed. An opening 74 is formed in the oxide film 72.

Next, as shown in FIG. 11B, an Si ₃ N ₄ layer 75 is formed by sputtering on the oxide films 71a and 71b, and an Al layer 76 is formed on the Si ₃ N ₄ layer 75 by sputtering. To do.

  Next, as shown in FIG. 11 (3), an opening 77 is formed on the center of the oxide film 71b of the Al layer 76 by etching with a resist mask.

  Next, as shown in FIG. 11 (4), the back surface of the silicon substrate 70 is etched through the opening 74 by the ICP method using the oxide film 73 as a mask to dig up to a predetermined depth that does not reach the oxide film 71b.

Next, as shown in FIG. 12 (5), the Si ₃ N ₄ layer 75 and the oxide film 71b are etched and etched through the opening 77 by reactive ion etching using the Al layer 76 as a mask. The surface of the silicon substrate 70 is etched by this method, and the silicon substrate 70 is dug until it reaches the hole below the back surface opening 74 dug in the step of FIG.

  Next, as shown in FIG. 12 (6), after the Al layer 76 is removed, an oxide film 79 is formed on the inner surface of the through-hole 78 formed up to the previous step by thermal oxidation.

Next, as shown in FIG. 12 (7), the Si ₃ N ₄ layer 75 is removed by reactive ion etching.

  Next, as shown in FIG. 13 (8), the surface of the silicon substrate 70 is etched through the opening 73 by the ICP method, and the periphery of the through hole 78 is dug down.

  Next, as shown in FIG. 13 (9), the oxide film 71b is removed by reactive ion etching until the thicker oxide film 71 remains and the thinner oxide film 71b disappears.

  Next, as shown in FIG. 13 (10), the surface of the silicon substrate 70 is etched by the ICP method so that the tip of the oxide film 79 formed on the inner surface of the through hole 78 is exposed in a cylindrical shape. Dig deeper into the surrounding silicon.

  Next, as shown in FIG. 13 (11), an electrode metal film 80 is formed on the surface of the silicon substrate 70 by sputtering. At this time, the electrode metal film 80 covers the tip end of the cylindrical oxide film 79.

  The substrate produced by the above steps is used as the nozzle forming base material. The nozzle forming base material 81 manufactured by the above process is formed with a silicon oxide nozzle tip 83 protruding in a cylindrical shape from the tip of the silicon projection 82, and the tip cut end of the nozzle tip 83 is formed. A stepped tip ultrafine nozzle having a discharge port as an outlet is configured. Such a nozzle forming substrate 81 makes it possible to discharge very fine droplets with high accuracy.

  Thereafter, in the same manner as in the fifth embodiment, the first silicon substrate 53 is bonded to the back surface of the nozzle forming substrate 81, and the piezoelectric element 3 is attached.

  In addition, this invention is not limited to the above embodiment. For example, in the above embodiment, the pressurizing unit using the piezoelectric body is configured, but a pressurizing unit using the heating element may be adopted.

It is sectional drawing which shows the electrostatic attraction | suction type liquid discharge head of 1st Embodiment of this invention. It is sectional drawing of the through-hole for alignment. It is sectional drawing which shows the electrostatic attraction | suction type liquid discharge head of 2nd Embodiment of this invention. It is sectional drawing which shows the electrostatic attraction | suction type liquid discharge head of 3rd Embodiment of this invention. It is sectional drawing which shows the electrostatic attraction | suction type liquid discharge head of 4th Embodiment of this invention. It is sectional drawing which shows the formation process of the 2nd silicon base material of 5th Embodiment of this invention. It is sectional drawing which shows the formation process of the 2nd silicon base material of 5th Embodiment of this invention following FIG. It is sectional drawing which shows the formation process of the 1st silicon base material of 5th Embodiment of this invention. It is sectional drawing which shows the formation process of the 1st silicon base material of 5th Embodiment of this invention following FIG. It is sectional drawing which shows the assembly process of 5th Embodiment of this invention. It is sectional drawing which shows the formation process of the nozzle formation base material (2nd silicon base material) of 6th Embodiment of this invention. It is sectional drawing which shows the formation process of the nozzle formation base material (2nd silicon base material) of 6th Embodiment of this invention following FIG. It is sectional drawing which shows the formation process of the nozzle formation base material (2nd silicon base material) of 6th Embodiment of this invention following FIG.

Explanation of symbols

1 Nozzle forming substrate 2 First silicon substrate (groove forming substrate)
DESCRIPTION OF SYMBOLS 3 Piezoelectric element 4 Resin base material 5 2nd silicon base material 6 Through-hole 7 Through-hole 8 Electrode film 9 Adhesive layer 10 Nozzle 11 Inlet 12 Outlet 13 Groove 14 Glass thin film 15 Liquid pressurization chamber (one liquid flow path Part)
16 Thin film 17 Through-hole 18 Through-hole 19 Electroformed film 20 Second silicon base material 21 Nozzle 22 Convex part 23 Inlet port 24 Outlet port 25 Electrode film

Claims (27)

Nozzle forming substrate formed by forming a nozzle that penetrates the plurality of substrates and opens the discharge port and the inflow port on a surface facing the composite substrate formed by bonding a plurality of substrates,
A groove-forming substrate having grooves formed on at least one surface;
The surface of the nozzle forming substrate on which the inlet is opened and the surface of the groove forming substrate on which the groove is formed are joined to connect the inlet and the surface on which the inlet opens and the groove. A liquid channel is formed,
An electrode for charging the liquid in the nozzle, and a pressurizing means for controlling the meniscus formed in the nozzle by pressurizing the liquid in the liquid flow path,
An electrostatic suction type liquid discharge head, wherein at least the base material in which the inflow opening is opened and the groove forming base material of the composite base material are made of a material having a Young's modulus of 50 [GPa] or more. Nozzle-forming substrate formed by forming a nozzle that penetrates the plurality of substrates and opens the discharge port and the inflow port on a surface facing the composite substrate formed by bonding a plurality of substrates,
A groove-forming substrate having grooves formed on at least one surface;
The surface of the nozzle forming substrate on which the inlet is opened and the surface of the groove forming substrate on which the groove is formed are joined, and the surface on which the inlet is opened and the groove are connected to the inlet. A liquid channel is formed,
An electrode for charging the liquid in the nozzle, and a pressurizing means for controlling the meniscus formed in the nozzle by pressurizing the liquid in the liquid flow path,
The Young's modulus of the base material in which the inflow opening constituting the composite base material opens and the groove forming base material is higher than the Young's modulus of the base material in which the discharge port constituting the composite base material opens,
The electrostatic attraction characterized in that the volume resistivity of the substrate opening the discharge port constituting the composite substrate is higher than the volume resistivity of the substrate opening the inlet forming the composite substrate. Type liquid discharge head. The electrostatic suction type liquid discharge head according to claim 1, wherein the base material on which the discharge ports constituting the composite base material are opened is made of a resin material. The base material in which the inflow opening constituting the composite base material is opened and the groove forming base material are both made of a silicon material and bonded by anodic bonding through a glass thin film. The electrostatic suction type liquid discharge head according to claim 1, 2 or 3. The base material in which the inflow opening constituting the composite base material opens is made of a glass material, the groove forming base material is made of a silicon material, and both the base materials are joined by anodic bonding. The electrostatic attraction type liquid discharge head according to claim 1, claim 2, or claim 3. A nozzle forming substrate in which a nozzle that opens a discharge port and an inflow port on a surface facing each other is formed on a single substrate;
A groove-forming substrate having grooves formed on at least one surface;
The surface of the nozzle forming substrate on which the inlet is opened and the surface of the groove forming substrate on which the groove is formed are joined to connect the inlet and the surface on which the inlet opens and the groove. A liquid channel is formed,
An electrode for charging the liquid in the nozzle, and a pressurizing means for controlling the meniscus formed in the nozzle by pressurizing the liquid in the liquid flow path,
The electrostatic suction type liquid discharge head, wherein the single base material and the groove forming base material are made of a material having a Young's modulus of 50 [GPa] or more. The electrostatic suction type liquid discharge head according to claim 6, wherein the discharge port is opened at a tip of a convex portion formed on the nozzle forming substrate. The electrostatic attraction according to claim 6 or 7, wherein the single base material and the groove forming base material are both made of a silicon material and bonded by anodic bonding through a glass thin film. Type liquid discharge head. The electrostatic attraction type liquid discharge head according to claim 1, wherein a pattern for alignment is formed on each of the two substrates to be bonded to each other. 10. A part of the liquid channel is formed of a thin film, and the pressurizing means changes the volume of the liquid channel by deforming the thin film. The electrostatic suction liquid discharge head according to any one of the above. The electrostatic attraction type liquid discharge head according to claim 10, wherein the thin film is constituted by a portion where the groove forming substrate is thinned by etching. The electrostatic suction type liquid discharge head according to claim 10, wherein the thin film is formed of a metal thin film formed by electroforming on the groove forming substrate. The electrostatic suction type liquid discharge head according to claim 1, wherein the pressurizing unit is a piezoelectric element. The electrostatic suction type liquid discharge head according to claim 1, wherein the discharge port is 20 [μm] or less. The electrostatic attraction type liquid discharge head according to claim 1, wherein a diameter of the inflow port is 50 [μm] or more and 100 [μm] or less. The electrostatic attraction type liquid discharge head according to any one of claims 1 to 15, wherein a thickness of a base material to which the inflow port is opened is 50 [μm] or more and 200 [μm] or less. . A groove forming step of forming a groove in the first silicon substrate by etching;
A through hole forming step of forming a through hole in the second silicon substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by molding a resin material;
The surface of the second silicon substrate and the opening of the through hole of the second silicon substrate are aligned with the groove, and the first silicon substrate and the second silicon substrate are joined and connected to the opening. A flow path assembly process for assembling a liquid flow path;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step of assembling a nozzle by joining the second silicon base material and the resin base material and connecting through holes to each other. A groove forming step of forming a groove in the first silicon substrate by etching;
A through hole forming step of forming a through hole in the second silicon substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by a photolithography technique for optically processing the photosensitive resin material;
The surface of the second silicon substrate and the opening of the through hole of the second silicon substrate are aligned with the groove, and the first silicon substrate and the second silicon substrate are joined and connected to the opening. A flow path assembly process for assembling a liquid flow path;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step of assembling a nozzle by joining the second silicon base material and the resin base material and connecting through holes to each other. A groove forming step of forming a groove in the first silicon substrate by etching;
A through hole forming step of forming a through hole in the second silicon substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by laser drilling a resin material;
The surface of the second silicon substrate and the opening of the through hole of the second silicon substrate are aligned with the groove, and the first silicon substrate and the second silicon substrate are joined and connected to the opening. A flow path assembly process for assembling a liquid flow path;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step of assembling a nozzle by joining the second silicon base material and the resin base material and connecting through holes to each other. A groove forming step of forming grooves on the first silicon substrate by etching;
A nozzle forming step of forming a nozzle that opens a discharge port at a convex portion and a tip of the convex portion by etching in the second silicon substrate, and opens an inflow port on the opposite side of the convex portion;
A liquid flow that joins the first silicon substrate and the second silicon substrate together with the surface of the second silicon substrate and the inlet of the second silicon substrate in the groove, and connects to the nozzle. A method for manufacturing an electrostatic suction type liquid discharge head, comprising: a flow path assembly step for assembling a path. 21. The method according to any one of claims 17 to 20, wherein the first silicon substrate and the second silicon substrate are bonded by an anodic bonding method by forming a glass thin film on any of the bonding surfaces. A method for producing an electrostatic suction liquid discharge head according to claim 1. A groove forming step of forming a groove in the first silicon substrate by etching;
A through hole forming step of forming a through hole in the glass substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by molding a resin material;
A flow for assembling a liquid flow path connecting the first silicon substrate and the glass substrate by aligning the surface of the glass substrate and the opening of the through hole of the glass substrate in the groove and joining the first silicon substrate and the glass substrate. Road assembly process;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step of assembling a nozzle by joining the glass base material and the resin base material and connecting through holes to each other. A groove forming step of forming a groove in the first silicon substrate by etching;
A through hole forming step of forming a through hole in the glass substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by a photolithography technique for optically processing the photosensitive resin material;
A flow for assembling a liquid flow path connecting the first silicon substrate and the glass substrate by aligning the surface of the glass substrate and the opening of the through hole of the glass substrate in the groove and joining the first silicon substrate and the glass substrate. Road assembly process;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step of assembling a nozzle by joining the glass base material and the resin base material and connecting through holes to each other. A groove forming step of forming a groove in the first silicon substrate by etching;
A through hole forming step of forming a through hole in the glass substrate by etching;
A resin base material forming step of forming a resin base material having a through hole by laser drilling a resin material;
A flow for assembling a liquid flow path connecting the first silicon substrate and the glass substrate by aligning the surface of the glass substrate and the opening of the through hole of the glass substrate in the groove and joining the first silicon substrate and the glass substrate. Road assembly process;
A method of manufacturing an electrostatic suction type liquid discharge head, comprising: a nozzle assembly step of assembling a nozzle by joining the glass base material and the resin base material and connecting through holes to each other. 25. The electrostatic suction liquid discharge head according to claim 22, wherein the first silicon substrate and the glass substrate are bonded by an anodic bonding method. Method. In the groove forming step, forming a thin film by making a part of the bottom of the groove thinner than the surroundings,
26. The method of manufacturing an electrostatic attraction type liquid discharge head according to claim 17, further comprising a step of disposing a piezoelectric element on the thin film. Before the groove forming step, the method includes a step of forming a metal thin film on the first silicon substrate by electroforming, and in the groove forming step, the groove is formed from a surface opposite to the surface on which the metal thin film is formed. Etching to form, exposing a part of the metal thin film at a part of the bottom of the groove;
26. The method of manufacturing an electrostatic attraction type liquid discharge head according to claim 17, further comprising a step of disposing a piezoelectric element on the metal thin film.

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