JP2006130710A - Metal composite film - Google Patents
Metal composite film Download PDFInfo
- Publication number
- JP2006130710A JP2006130710A JP2004320141A JP2004320141A JP2006130710A JP 2006130710 A JP2006130710 A JP 2006130710A JP 2004320141 A JP2004320141 A JP 2004320141A JP 2004320141 A JP2004320141 A JP 2004320141A JP 2006130710 A JP2006130710 A JP 2006130710A
- Authority
- JP
- Japan
- Prior art keywords
- metal composite
- composite film
- polyimide
- thermoplastic polyimide
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002905 metal composite material Substances 0.000 title claims abstract description 25
- 229920006259 thermoplastic polyimide Polymers 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 238000007772 electroless plating Methods 0.000 claims abstract description 11
- 238000009713 electroplating Methods 0.000 claims abstract description 9
- 229920001721 polyimide Polymers 0.000 claims description 32
- 239000004642 Polyimide Substances 0.000 claims description 27
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 21
- 150000004985 diamines Chemical class 0.000 claims description 12
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- 239000009719 polyimide resin Substances 0.000 claims description 5
- BKDVBBSUAGJUBA-UHFFFAOYSA-N bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid Chemical compound C1=CC2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O BKDVBBSUAGJUBA-UHFFFAOYSA-N 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000004760 aramid Substances 0.000 claims description 3
- 229920003235 aromatic polyamide Polymers 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 229920006122 polyamide resin Polymers 0.000 claims description 2
- 238000006068 polycondensation reaction Methods 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 229920000417 polynaphthalene Polymers 0.000 claims description 2
- 229920001955 polyphenylene ether Polymers 0.000 claims description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 24
- 239000010408 film Substances 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 8
- 239000002253 acid Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 150000002596 lactones Chemical class 0.000 description 7
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UENRXLSRMCSUSN-UHFFFAOYSA-N 3,5-diaminobenzoic acid Chemical compound NC1=CC(N)=CC(C(O)=O)=C1 UENRXLSRMCSUSN-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 150000004984 aromatic diamines Chemical class 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BBDGNUHKKJPLRG-UHFFFAOYSA-N 1,4-diaminonaphthalene-2-carboxylic acid Chemical compound C1=CC=C2C(N)=CC(C(O)=O)=C(N)C2=C1 BBDGNUHKKJPLRG-UHFFFAOYSA-N 0.000 description 2
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 description 2
- WIOZZYWDYUOMAY-UHFFFAOYSA-N 2,5-diaminoterephthalic acid Chemical compound NC1=CC(C(O)=O)=C(N)C=C1C(O)=O WIOZZYWDYUOMAY-UHFFFAOYSA-N 0.000 description 2
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 description 2
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229920001646 UPILEX Polymers 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000003377 acid catalyst Substances 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 238000006358 imidation reaction Methods 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- QPJVMBTYPHYUOC-UHFFFAOYSA-N methyl benzoate Chemical compound COC(=O)C1=CC=CC=C1 QPJVMBTYPHYUOC-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- KHZHJGIOIIUHOO-UHFFFAOYSA-N 2-(2,4-diaminophenyl)acetic acid Chemical compound NC1=CC=C(CC(O)=O)C(N)=C1 KHZHJGIOIIUHOO-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- MXPYJVUYLVNEBB-UHFFFAOYSA-N 2-[2-(2-carboxybenzoyl)oxycarbonylbenzoyl]oxycarbonylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)OC(=O)C1=CC=CC=C1C(=O)OC(=O)C1=CC=CC=C1C(O)=O MXPYJVUYLVNEBB-UHFFFAOYSA-N 0.000 description 1
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 1
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 description 1
- WLJVXDMOQOGPHL-PPJXEINESA-N 2-phenylacetic acid Chemical compound O[14C](=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-PPJXEINESA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- UCQABCHSIIXVOY-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]phenoxy]aniline Chemical group NC1=CC=CC(OC=2C=CC(=CC=2)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 UCQABCHSIIXVOY-UHFFFAOYSA-N 0.000 description 1
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- QJENIOQDYXRGLF-UHFFFAOYSA-N 4-[(4-amino-3-ethyl-5-methylphenyl)methyl]-2-ethyl-6-methylaniline Chemical compound CC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(C)C=2)=C1 QJENIOQDYXRGLF-UHFFFAOYSA-N 0.000 description 1
- AJYDKROUZBIMLE-UHFFFAOYSA-N 4-[2-[2-[2-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=CC=C(OC=2C=CC(N)=CC=2)C=1C(C)(C)C1=CC=CC=C1OC1=CC=C(N)C=C1 AJYDKROUZBIMLE-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- SSDBTLHMCVFQMS-UHFFFAOYSA-N 4-[4-(1,1,1,3,3,3-hexafluoropropan-2-yl)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C(F)(F)F)C(F)(F)F)C=C1 SSDBTLHMCVFQMS-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 1
- XPAQFJJCWGSXGJ-UHFFFAOYSA-N 4-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 XPAQFJJCWGSXGJ-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- AXPZDYVDTMMLNB-UHFFFAOYSA-N Benzyl ethyl ether Chemical compound CCOCC1=CC=CC=C1 AXPZDYVDTMMLNB-UHFFFAOYSA-N 0.000 description 1
- 241000238366 Cephalopoda Species 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- TUQQUUXMCKXGDI-UHFFFAOYSA-N bis(3-aminophenyl)methanone Chemical compound NC1=CC=CC(C(=O)C=2C=C(N)C=CC=2)=C1 TUQQUUXMCKXGDI-UHFFFAOYSA-N 0.000 description 1
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- WQPDQJCBHQPNCZ-UHFFFAOYSA-N cyclohexa-2,4-dien-1-one Chemical compound O=C1CC=CC=C1 WQPDQJCBHQPNCZ-UHFFFAOYSA-N 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- PHTQWCKDNZKARW-UHFFFAOYSA-N isopentyl alcohol Natural products CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 1
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Landscapes
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Abstract
Description
本発明はフレキシブルプリント配線板として使用でき、金属と絶縁層との密着性及び微細配線での密着力に優れた金属複合フィルムに関する。 The present invention relates to a metal composite film that can be used as a flexible printed wiring board and has excellent adhesion between a metal and an insulating layer and adhesion in fine wiring.
従来から接着剤としてエポキシ系、アクリル系、ポリアミド系、フェノール系等を使用した、絶縁性基材/接着剤/金属箔の3層構造のフレキシブルプリント配線板がよく知られているが、耐熱性や金属層の密着性は接着剤の特性によって決まってしまい、耐熱性の点で問題が多かった。また、耐熱性を向上させる接着剤として熱可塑性ポリイミドの前駆体を用い、金属箔を高温で熱圧着させたフレキシブルプリント配線板(例えば特許文献1,2)が知られているが、金属箔を高温で熱圧着しなければならないため加工後に残留歪みの問題が生じ、圧着に用いる金属箔の厚さが通常10μm以上であるのでピッチの狭いパターニングが困難であるという欠点があった。 Conventionally, a flexible printed wiring board having a three-layer structure of insulating substrate / adhesive / metal foil using epoxy, acrylic, polyamide, phenol, etc. as an adhesive is well known. In addition, the adhesion of the metal layer was determined by the properties of the adhesive, and there were many problems in terms of heat resistance. In addition, a flexible printed wiring board (for example, Patent Documents 1 and 2) in which a thermoplastic polyimide precursor is used as an adhesive for improving heat resistance and a metal foil is thermocompression bonded at a high temperature is known. Since it has to be thermocompression bonded at a high temperature, there is a problem of residual distortion after processing, and since the thickness of the metal foil used for pressure bonding is usually 10 μm or more, patterning with a narrow pitch is difficult.
また、絶縁性フィルム、例えば非熱可塑性ポリイミドフィルムやアラミドフィルムに直接金属をスパッタリング又は無電解メッキした後、電解メッキにて金属層を形成する2層構造のフレキシブルプリント配線板も知られているが、密着性が低く特に熱負荷後の密着性の低下が大きいという欠点がある。 Also known is a flexible printed wiring board having a two-layer structure in which a metal layer is formed by electrolytic plating after sputtering or electroless plating of a metal directly on an insulating film such as a non-thermoplastic polyimide film or an aramid film. In addition, there is a drawback in that the adhesion is low and the deterioration of the adhesion after heat load is particularly large.
また、非熱可塑性ポリイミドに熱可塑性ポリイミド層を設け、その面上に銅をスパッタリングした後、電解メッキにより金属層を形成するフレキシブルプリント配線板も知られているが(例えば特許文献3)、微細配線における密着力が低くなる問題があった。 A flexible printed wiring board is also known in which a thermoplastic polyimide layer is provided on a non-thermoplastic polyimide, copper is sputtered on the surface, and then a metal layer is formed by electrolytic plating (for example, Patent Document 3). There was a problem that the adhesion in the wiring was lowered.
本発明の目的は、耐熱性及び密着性に優れた、微細配線形成可能なフレキシブルプリント配線板用の金属複合フィルムを提供することである。 The objective of this invention is providing the metal composite film for flexible printed wiring boards excellent in heat resistance and adhesiveness in which fine wiring formation is possible.
本願発明者らは、鋭意研究の結果、絶縁性フィルムの少なくとも片面に熱可塑性ポリイミド層を設け、該熱可塑性ポリイミド層上に無電解メッキ、次いで電解メッキによって金属層を形成することにより、耐熱性及び密着性に優れた、微細配線形成可能なフレキシブルプリント配線板用の金属複合フィルムが得られることを見出し、本発明に到達した。 As a result of diligent research, the inventors of the present application have provided a thermoplastic polyimide layer on at least one surface of an insulating film, and formed a metal layer on the thermoplastic polyimide layer by electroless plating, and then by electrolytic plating. And it discovered that the metal composite film for flexible printed wiring boards excellent in adhesiveness and fine wiring formation was obtained, and reached | attained this invention.
すなわち、本発明は、絶縁性フィルムの少なくとも片面に熱可塑性ポリイミド層を形成し、更に該熱可塑性ポリイミド層表面に無電解メッキ、次いで電解メッキを行うことにより金属層を形成させた金属複合フィルムを提供する。 That is, the present invention provides a metal composite film having a metal layer formed by forming a thermoplastic polyimide layer on at least one surface of an insulating film, and further performing electroless plating on the surface of the thermoplastic polyimide layer, followed by electrolytic plating. provide.
本発明で得られた金属複合フィルムは、耐熱性、密着性に優れ、微細配線形成後も密着性に優れるため、微細回路を有する高密度フレキシブルプリント配線板として好適に使用されることから、本発明の金属複合基板の工業的な実用性は極めて高いものである。 Since the metal composite film obtained in the present invention is excellent in heat resistance and adhesion and excellent in adhesion even after the formation of fine wiring, it is preferably used as a high-density flexible printed wiring board having fine circuits. The industrial utility of the metal composite substrate of the invention is extremely high.
本発明に用いられる絶縁性フィルムは、絶縁性のフィルムであれば、特に限定されず、好ましい例として、従来からフレキシブルプリント配線板に用いられているポリエチレンテレフタレート、ポリナフタレンテレフタレート、ポリフェニレンスルフィド、ポリフェニレンエーテル系樹脂、ポリアミド系樹脂、アラミカ(帝人アドバンストフィルム株式会社製)等の芳香族ポリアミド系樹脂、商品名「カプトン」(東レ・デュポン株式会社製、デュポン株式会社製)の非熱可塑性ポリイミドシリーズ、商品名「ユーピレックス」(宇部興産株式会社製)の非熱可塑性ポリイミドシリーズ、商品名「アピカル」(鐘淵化学株式会社製)の非熱可塑性ポリイミドシリーズ等のポリイミド系樹脂、テトラフルオロエチレン樹脂、フッ化エチレンプロピレン共重合樹脂、パーフルオロアルコキシ樹脂等のフッ素系樹脂、商品名「ベクスター」(クラレ株式会社製)等の液晶ポリマー等を挙げることができる。 The insulating film used in the present invention is not particularly limited as long as it is an insulating film. Preferred examples include polyethylene terephthalate, polynaphthalene terephthalate, polyphenylene sulfide, and polyphenylene ether that have been used in flexible printed wiring boards. Resins, polyamide resins, aromatic polyamide resins such as Aramika (manufactured by Teijin Advanced Film Co., Ltd.), non-thermoplastic polyimide series and products under the trade name "Kapton" (manufactured by Toray DuPont, DuPont) Non-thermoplastic polyimide series with the name “UPILEX” (manufactured by Ube Industries), polyimide resin such as the non-thermoplastic polyimide series with the product name “APICAL” (manufactured by Kaneka Chemical Co., Ltd.), tetrafluoroethylene resin, fluoride Ethylene pro It can be mentioned alkylene copolymer resin, fluorine resin such as perfluoroalkoxy resin, trade name "VECSTAR" (manufactured by Kuraray Co., Ltd.) such as liquid crystal polymer or the like.
絶縁性フィルムの厚さは、特に限定されないが、5〜500μmが好ましく、さらに好ましくは5〜125μmである。 Although the thickness of an insulating film is not specifically limited, 5-500 micrometers is preferable, More preferably, it is 5-125 micrometers.
本発明に用いられる熱可塑性ポリイミドは、好ましくは溶剤可溶性のポリイミド樹脂が用いられる。なお、ここで、「溶剤可溶」とは、N−メチル−2−ピロリドン(NMP)中に、5重量%以上、好ましくは10重量%以上の濃度で溶解することを意味する。絶縁性フィルムがポリイミド系樹脂のように耐熱性が高い場合、該熱可塑性ポリイミドの前駆体であるポリアミド酸の溶液を塗布後、加熱脱水閉環反応を行うことで熱可塑性ポリイミド層を設けることも可能であるが、耐熱性の低い基材に適用することを考慮すると、ポリイミド溶液を塗布、乾燥する方法がより広範な絶縁性フィルムに適用できる。 As the thermoplastic polyimide used in the present invention, a solvent-soluble polyimide resin is preferably used. Here, “solvent soluble” means dissolution in N-methyl-2-pyrrolidone (NMP) at a concentration of 5 wt% or more, preferably 10 wt% or more. When the insulating film has high heat resistance like a polyimide resin, it is possible to provide a thermoplastic polyimide layer by applying a polyamic acid solution, which is a precursor of the thermoplastic polyimide, followed by a heat dehydration cyclization reaction However, in consideration of application to a substrate having low heat resistance, a method of applying and drying a polyimide solution can be applied to a wider range of insulating films.
溶剤可溶性のポリイミドは、ジアミン成分とテトラカルボン酸二無水物との直接的なイミド化反応により製造することができる(特許文献4)。該ポリイミドを構成するテトラカルボン酸二無水物の好ましい例(モノマーの形態で記載)として、3,4,3’,4’−ビフェニルテトラカルボン酸二無水物、3,4,2’,3’−ビフェニルテトラカルボン酸二無水物、3,4,3’,4’−ジフェニルエーテルテトラカルボン酸二無水物、3,4,3’,4’−ジフェニルスルホンテトラカルボン酸二無水物、ベンゾフェノンテトラカルボン酸二無水物、ビス(ジカルボキシフェニル)プロパン無水物、ピロメリト酸、4,4’−(2,2−イソプロピリデン)ジフタル酸二無水物、ビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸二無水物等があげられる。 A solvent-soluble polyimide can be produced by a direct imidation reaction between a diamine component and tetracarboxylic dianhydride (Patent Document 4). Preferred examples of the tetracarboxylic dianhydride constituting the polyimide (described in the form of a monomer) include 3,4,3 ′, 4′-biphenyltetracarboxylic dianhydride, 3,4,2 ′, 3 ′. -Biphenyltetracarboxylic dianhydride, 3,4,3 ', 4'-diphenyl ether tetracarboxylic dianhydride, 3,4,3', 4'-diphenylsulfone tetracarboxylic dianhydride, benzophenone tetracarboxylic acid Dianhydride, bis (dicarboxyphenyl) propane anhydride, pyromellitic acid, 4,4 ′-(2,2-isopropylidene) diphthalic dianhydride, bicyclo [2,2,2] oct-7-ene- 2,3,5,6-tetracarboxylic dianhydride and the like.
また、該ポリイミドを構成するジアミン成分の好ましい例(モノマーの形態で記載)として、3,3’−ジカルボキシル−4,4’−ジアミノジフェニルメタン、3,5−ジアミノ安息香酸、2,4−ジアミノフェニル酢酸、2,5−ジアミノテレフタル酸、1,4−ジアミノ−2−ナフタレンカルボン酸、2,5−ジアミノ−n−吉草酸、1,4−ジアミノベンゼン、1,3−ジアミノベンゼン、2,4−ジアミノトルエン、4,4’−ジアミノジフェニルメタン、3,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルエーテル、3,3’−ジメチル−4,4’−ジアミノビフェニル、2,2’−ジメチル−4,4’−ジアミノビフェニル、4,4’−ジアミノベンゾフェノン、3,3’−ジアミノベンゾフェノン、4,4’−ビス(4−アミノフェニル)スルフィド、4,4’−ジアミノジフェニルスルホン、4,4’−ジアミノベンズアニリド、9,9−ビス(4−アミノフェニル)フルオレン、1,4−ビス(4−アミノフェノキシ)ベンゼン、1,3−ビス(4−アミノフェノキシ)ベンゼン、4,4’−ビス(4−アミノフェノキシ)ビフェニル、4,4’−ビス(3−アミノフェノキシ)ビフェニル、2,2−ビス(4−アミノフェノキシフェニル)プロパン、ビス[4−(4−アミノフェノキシ)フェニル]スルホン、2,2、−ビス[4−(4−アミノフェノキシ)フェニル]ヘキサフルオロプロパン、3,3’−ジカルボキシ−4,4’−ジアミノジフェニルメタン、3,3’,5,5’−テトラメチル−4,4’−ジアミノジフェニルメタン、3,3’,5,5’−テトラエチル−4,4’−ジアミノジフェニルメタン、3,3’−ジエチル−5,5’−ジメチル−4,4’−ジアミノジフェニルメタン、3,3’−ジヒドロキシ−4,4’−ジアミノビフェニル、ヘキサメチレンジアミン、イソホロンジアミン、1,3−ビス(3−アミノプロピル)−1,1,3,3−テトラメチルジシロキサン、α,ω−ビス(3−アミノプロピル)ポリジメチルシロキサン等が挙げられる。 Preferred examples of the diamine component constituting the polyimide (described in the form of monomer) include 3,3′-dicarboxyl-4,4′-diaminodiphenylmethane, 3,5-diaminobenzoic acid, and 2,4-diamino. Phenylacetic acid, 2,5-diaminoterephthalic acid, 1,4-diamino-2-naphthalenecarboxylic acid, 2,5-diamino-n-valeric acid, 1,4-diaminobenzene, 1,3-diaminobenzene, 2, 4-diaminotoluene, 4,4′-diaminodiphenylmethane, 3,4′-diaminodiphenyl ether, 4,4′-diaminodiphenyl ether, 3,3′-dimethyl-4,4′-diaminobiphenyl, 2,2′-dimethyl -4,4'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4, 4′-bis (4-aminophenyl) sulfide, 4,4′-diaminodiphenylsulfone, 4,4′-diaminobenzanilide, 9,9-bis (4-aminophenyl) fluorene, 1,4-bis (4 -Aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 4,4'-bis (4-aminophenoxy) biphenyl, 4,4'-bis (3-aminophenoxy) biphenyl, 2,2 -Bis (4-aminophenoxyphenyl) propane, bis [4- (4-aminophenoxy) phenyl] sulfone, 2,2, -bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, 3,3 ' -Dicarboxy-4,4'-diaminodiphenylmethane, 3,3 ', 5,5'-tetramethyl-4,4'-diaminodiphenylmeta 3,3 ′, 5,5′-tetraethyl-4,4′-diaminodiphenylmethane, 3,3′-diethyl-5,5′-dimethyl-4,4′-diaminodiphenylmethane, 3,3′-dihydroxy- 4,4′-diaminobiphenyl, hexamethylenediamine, isophoronediamine, 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane, α, ω-bis (3-aminopropyl) ) Polydimethylsiloxane and the like.
用いるポリイミドが、カルボキシル基を含んでいると、耐熱性、密着性に特に優れるので好ましい。カルボキシル基を含むポリイミドは、好ましくは、カルボキシル基を有するジアミン成分を用いることにより製造することができる。このようなジアミン成分の例として、3,3’−ジカルボキシル−4,4’−ジアミノジフェニルメタン、3,5−ジアミノ安息香酸、2,4−ジアミノフェニル酢酸、2,5−ジアミノテレフタル酸、1,4−ジアミノ−2−ナフタレンカルボン酸及び2,5−ジアミノ−n−吉草酸等を例示することができる。 It is preferable that the polyimide to be used contains a carboxyl group because it is particularly excellent in heat resistance and adhesion. The polyimide containing a carboxyl group can be preferably produced by using a diamine component having a carboxyl group. Examples of such diamine components include 3,3′-dicarboxyl-4,4′-diaminodiphenylmethane, 3,5-diaminobenzoic acid, 2,4-diaminophenylacetic acid, 2,5-diaminoterephthalic acid, 1 , 4-diamino-2-naphthalenecarboxylic acid, 2,5-diamino-n-valeric acid, and the like.
また、テトラカルボン酸二無水物成分として、ビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸二無水物を含んでいると、耐熱性、密着性に特に優れるので好ましい。 Further, when bicyclo [2,2,2] oct-7-ene-2,3,5,6-tetracarboxylic dianhydride is contained as a tetracarboxylic dianhydride component, heat resistance and adhesion It is preferable because it is particularly excellent.
ジアミン成分とテトラカルボン酸二無水物成分との直接イミド化反応は、ラクトンと塩基と水との次の平衡反応を利用した触媒系を用いて行なうことができる。
{ラクトン}+{塩基}+{水} = {酸基}+{塩基}―
The direct imidation reaction between the diamine component and the tetracarboxylic dianhydride component can be carried out using a catalyst system utilizing the following equilibrium reaction of lactone, base and water.
{Lactone} + {base} + {water} = {acid group} + {base} ―
この{酸基}+{塩基}―系を触媒として、120〜200℃に加熱してポリイミド溶液を得ることができる。イミド化反応により生成する水は、トルエンと共沸させて反応系外へ除く。反応系のイミド化が終了した時点で、{酸基}+{塩基}―はラクトンと塩基になり、触媒作用を失うと同時にトルエンと共に反応系外へ除かれる。この方法によるポリイミド溶液は、上記触媒物質が、反応後のポリイミド溶液に含まれないため高純度のポリイミド溶液として、そのまま使用可能である。また、p−トルエンスルホン酸等の酸触媒を用いることも可能である。 Using this {acid group} + {base} − system as a catalyst, a polyimide solution can be obtained by heating to 120 to 200 ° C. Water generated by the imidization reaction is azeotroped with toluene and removed from the reaction system. When the imidization of the reaction system is completed, {acid group} + {base} − becomes a lactone and a base and loses the catalytic action, and at the same time is removed from the reaction system together with toluene. The polyimide solution obtained by this method can be used as it is as a high-purity polyimide solution because the catalyst substance is not contained in the polyimide solution after the reaction. It is also possible to use an acid catalyst such as p-toluenesulfonic acid.
上記イミド化反応に使われる反応溶媒は、上記したトルエンに加え、極性の有機溶媒が使用される。これらの有機溶媒としては、N−メチルー2―ピロリドン、ジメチルホルムアミド、ジメチルアセトアミド、ジメチルスルホキシド、スルホラン、テトラメチル尿素γ−ブチロラクトン等、ポリイミドを溶解する極性溶媒が挙げられる。また、エステル系又はケトン系又はエーテル系の溶媒を混合して使用する事も可能であり、エステル系溶媒としては安息香酸メチル等が、ケトン系溶媒としては、メチルエチルケトン、メチルプロピルケトン、メチルイソプロピルケトン、メチルブチルケトン、メチルイソブチルケトン、メチル−n−ヘキシルケトン、ジエチルケトン、ジイソプロピルケトン、ジイソブチルケトン、シクロペンタノン、シクロヘキサノン、メチルシクロヘキサノン、アセチルアセトン、ジアセトンアルコール、シクロヘキセン−n−オン等が、エーテル系溶媒としてはジプロピルエーテル、ジイソプロピルエーテル、ジブチルエーテル、テトラヒドロフラン、テトラヒドロピラン、エチルイソアミルアルコール、エチル−t−ブチルエーテル、エチルベンジルエーテル、ジエチレングリコールジメチルエーテル、クエジルメチルエーテル、アニソール、フェネトール等が使用可能である。 As a reaction solvent used for the imidization reaction, a polar organic solvent is used in addition to the above-described toluene. Examples of these organic solvents include polar solvents that dissolve polyimide, such as N-methyl-2-pyrrolidone, dimethylformamide, dimethylacetamide, dimethyl sulfoxide, sulfolane, and tetramethylurea γ-butyrolactone. It is also possible to use a mixture of ester, ketone or ether solvents, such as methyl benzoate as the ester solvent, methyl ethyl ketone, methyl propyl ketone, methyl isopropyl ketone as the ketone solvent. , Methyl butyl ketone, methyl isobutyl ketone, methyl-n-hexyl ketone, diethyl ketone, diisopropyl ketone, diisobutyl ketone, cyclopentanone, cyclohexanone, methylcyclohexanone, acetylacetone, diacetone alcohol, cyclohexene-n-one, etc. Solvents include dipropyl ether, diisopropyl ether, dibutyl ether, tetrahydrofuran, tetrahydropyran, ethyl isoamyl alcohol, ethyl tert-butyl ether, ethyl benzyl Ether, diethylene glycol dimethyl ether, Que Jill methyl ether, anisole, phenetole and the like can be used.
また、ラクトンとしてはγ−バレロラクトンが好ましく、塩基としてはピリジン及び/又はメチルモルフォリンが好ましい。 In addition, γ-valerolactone is preferable as the lactone, and pyridine and / or methylmorpholine is preferable as the base.
上記イミド化反応に供するテトラカルボン酸二無水物とジアミンとの混合比率(酸/ジアミン)は、モル比で1.05〜0.95程度が好ましい。また、反応開始時における反応混合物全体中の酸二無水物の濃度は4〜16重量%程度が好ましく、ラクトンの濃度は0.2〜0.6重量%程度が好ましく、塩基の濃度は0.3〜0.9重量%程度が好ましく、トルエンの濃度は6〜15重量%程度が好ましい。また、反応時間は特に限定されず、製造しようとするポリイミドの分子量等により異なるが、通常2〜10時間程度である。また、反応は撹拌下に行なうことが好ましい。 The mixing ratio (acid / diamine) of tetracarboxylic dianhydride and diamine used for the imidization reaction is preferably about 1.05 to 0.95 in terms of molar ratio. The concentration of the acid dianhydride in the entire reaction mixture at the start of the reaction is preferably about 4 to 16% by weight, the concentration of the lactone is preferably about 0.2 to 0.6% by weight, and the concentration of the base is 0.00. About 3 to 0.9% by weight is preferable, and the concentration of toluene is preferably about 6 to 15% by weight. Moreover, reaction time is not specifically limited, Although it changes with the molecular weight etc. of the polyimide which is going to manufacture, it is about 2 to 10 hours normally. The reaction is preferably performed with stirring.
なお、ラクトン及び塩基から成る2成分系触媒を用いたポリイミドの製造方法自体は公知であり、例えば特許文献4に記載されている。 In addition, the manufacturing method of the polyimide itself using the two-component catalyst consisting of a lactone and a base is known, and is described in Patent Document 4, for example.
上記のイミド化反応を、異なる酸二無水物及び/又は異なるジアミンを用いて逐次的に2段階行なうことにより、ブロック共重合ポリイミドを製造することができる。従来のポリアミック酸を経由するポリイミドの製造方法によれば、共重合体はランダム共重合体しか製造できなかった。任意の酸及び/又はジアミン成分を選択してブロック共重合ポリイミドを製造することができるので、接着性や寸法安定性の付与、低誘電率化等の任意の所望の性質又は機能をポリイミドに付与することができる。本発明では、このような共重合ポリイミドを好ましく採用することもできる。 A block copolymerized polyimide can be produced by sequentially performing the above-described imidization reaction in two steps using different acid dianhydrides and / or different diamines. According to the conventional method for producing polyimide via a polyamic acid, only a random copolymer can be produced. A block copolymerized polyimide can be produced by selecting any acid and / or diamine component, so that any desired property or function such as adhesion, dimensional stability, or low dielectric constant can be imparted to the polyimide. can do. In the present invention, such a copolymerized polyimide can be preferably employed.
ブロック共重合ポリイミドを製造する場合の好ましい方法として、上記のラクトンと塩基により生成した酸触媒を用いて、芳香族ジアミンとテトラカルボン酸二無水物のいずれかの成分を多量にして、ポリイミドオリゴマーとし、ついで芳香族ジアミン及び/又はテトラカルボン酸二無水物を加えて(全芳香族ジアミンと全テトラカルボン酸二無水物のモル比は、1.05―0.95である)2段階重縮合する方法を挙げることができる。 As a preferred method for producing a block copolymerized polyimide, a polyimide oligomer is obtained by using an acid catalyst produced from the above lactone and a base and increasing the amount of either an aromatic diamine or tetracarboxylic dianhydride component. Then, aromatic diamine and / or tetracarboxylic dianhydride is added (molar ratio of total aromatic diamine to total tetracarboxylic dianhydride is 1.05-0.95), and two-stage polycondensation is performed. A method can be mentioned.
本発明に用いられる熱可塑性ポリイミドは、膜性の観点から重量平均分子量は50000以上が望ましく、塗料粘度の観点から重量平均分子量は300000以下が好ましい。また、分子量制御のために、用いるテトラカルボン酸二無水物とジアミンの比率は必ずしも等モルである必要はない。また、樹脂末端をマレイン酸無水物やフタル酸無水物のような酸無水物、あるいは、アニリン等のモノアミンで封止してもよい。 The thermoplastic polyimide used in the present invention desirably has a weight average molecular weight of 50,000 or more from the viewpoint of film properties, and preferably has a weight average molecular weight of 300,000 or less from the viewpoint of paint viscosity. Moreover, the ratio of the tetracarboxylic dianhydride and diamine used for the molecular weight control does not necessarily need to be equimolar. Further, the resin terminal may be sealed with an acid anhydride such as maleic anhydride or phthalic anhydride, or a monoamine such as aniline.
本発明の熱可塑性ポリイミド層は、前述の方法で得られたポリイミド溶液を絶縁性のフィルムの表面に塗工、乾燥することで、容易に形成することができる。塗工の方式は、リバースロール、ロッド(バー)、ブレード、ナイフ、コンマ、ダイ、リップ、グラビア、ロータリースクリーン等の種々の方式が可能である。乾燥には、熱風乾燥機や赤外線乾燥機等、使用する溶媒の除去に充分な温度をかける事が出来るものであれば特に限定されるものではない。本発明の熱可塑性ポリイミド層の厚さ(乾燥後)は1〜20μmが好ましく2〜10μmであることがさらに好ましい。1μm以下であれば、樹脂層の効果が充分に得られず密着性が低下する。一方20μmより厚くなると、寸法変化率や吸湿時のハンダ耐熱が低下する問題がある。 The thermoplastic polyimide layer of the present invention can be easily formed by coating and drying the polyimide solution obtained by the above-described method on the surface of an insulating film. As the coating method, various methods such as reverse roll, rod (bar), blade, knife, comma, die, lip, gravure, and rotary screen are possible. The drying is not particularly limited as long as it can apply a temperature sufficient to remove the solvent to be used, such as a hot air dryer or an infrared dryer. 1-20 micrometers is preferable and, as for the thickness (after drying) of the thermoplastic polyimide layer of this invention, it is more preferable that it is 2-10 micrometers. If it is 1 micrometer or less, the effect of a resin layer will not fully be acquired but adhesiveness will fall. On the other hand, when it becomes thicker than 20 μm, there is a problem that the rate of dimensional change and solder heat resistance during moisture absorption are lowered.
本発明において金属層に用いられる金属は、配線として実用的な金属であれば特に限定されず、銅が好適に用いられる。金属層の形成には種々の方法が可能であるが、本発明では、熱可塑性ポリイミド層の上に無電解メッキ、次いで電解メッキを行うことで形成する。 In the present invention, the metal used for the metal layer is not particularly limited as long as it is a practical metal for wiring, and copper is preferably used. Various methods can be used to form the metal layer. In the present invention, the metal layer is formed by electroless plating and then electrolytic plating on the thermoplastic polyimide layer.
無電解メッキの方法自体は周知であり、種々の無電解メッキ用の溶液が市販されているので、本発明においてもこれらの市販の溶液を好ましく用いることができる。例えば、荏原ユージライト(株)製のデスミア液DS-250、中和還元液DS-350で処理後、プレディップ液PI-3000、キャタリスト液PI-3500、アクセレレーター液PI-4000の処理を行うことができる。その後、無電解銅めっき液PI-5000に浸漬することで、無電解銅めっき皮膜を析出させることができる。 Since the electroless plating method itself is well known and various electroless plating solutions are commercially available, these commercially available solutions can be preferably used in the present invention. For example, after processing with Desmear liquid DS-250 and Neutralized reducing liquid DS-350 manufactured by EBARA Eugilite Co., Ltd., treatment with pre-dip liquid PI-3000, catalyst liquid PI-3500, and accelerator liquid PI-4000 It can be performed. Then, an electroless copper plating film can be deposited by immersing in electroless copper plating solution PI-5000.
無電解メッキの方法自体は周知であり、種々の装置及びそのための溶液が市販されているので、本発明においてもこれらの市販の装置及び溶液を好ましく用いることができる。例えば、荏原ユージライト(株)製の酸性脱脂液PB-242D処理後、酸活性を行い、Cu-Brite TH-RII(商品名)を用いて電解銅めっき処理を行うことができる。電流密度、めっき時間を変化させることで、任意の銅箔厚を得ることができる。 The electroless plating method itself is well known, and various apparatuses and solutions therefor are commercially available. In the present invention, these commercially available apparatuses and solutions can be preferably used. For example, after treatment with acidic degreasing solution PB-242D manufactured by EBARA Eugelite Co., Ltd., acid activation is performed, and electrolytic copper plating can be performed using Cu-Brite TH-RII (trade name). An arbitrary copper foil thickness can be obtained by changing the current density and the plating time.
上記無電解メッキ及び電解メッキにより形成される金属層の厚さ(両メッキの合計の厚さ)は、配線として適度の導電性を有し、また、適度の可撓性を有するという観点から、1〜40μmが好ましい。 From the viewpoint that the thickness of the metal layer formed by the electroless plating and electrolytic plating (total thickness of both platings) has appropriate conductivity as the wiring, and has appropriate flexibility. 1-40 micrometers is preferable.
以下、本発明を実施例に基づきより具体的に説明する。もっとも、本発明は下記実施例に限定されるものではない。 Hereinafter, the present invention will be described more specifically based on examples. However, the present invention is not limited to the following examples.
合成例1
(2リッター容量の三つ口セパラブルフラスコに、ステンレス製のイカリ型攪拌器、窒素ガス導入管及びストップコックのついたトラップの上に玉付き冷却管をつけた還流冷却器を取り付け、窒素ガス気流中で反応する。ビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸二無水物44.9g(200ミリモル)、3,5−ジアミノ安息香酸15.22g(100ミリモル)、γ−バレロラクトン3.0g(30ミリモル)、ピリジン3.6g(40ミリモル)、N−メチルピロリドン300gとトルエン60gを加えた。これに窒素ガスを通じながら180℃で1時間反応した。トルエンと水の共沸物を除いた。この反応液中に、3,4,3’,4’−ビフェニルテトラカルボン酸ジ無水物29.4g(100ミリモル)、1,3−ビス−(3−アミノフェノキシ)ベンゼン58.46g(200ミリモル)、N−メチルピロリドン268gとトルエン40gを加え、窒素ガスを通じながら室温で1時間反応した。次いで180℃で3時間、トルエンと水の共沸物を除きながら反応した。重合したポリイミドのポリスチレン換算分子量は、数平均分子量で58,900、重量平均分子量で95,000であった。このポリイミドのガラス転移温度は、213−226℃、熱分解開始温度は422℃であった。また、得られたポリイミド溶液中のポリイミドの濃度は19.5重量%であった。
Synthesis example 1
(A 2-liter capacity three-necked separable flask was equipped with a stainless steel squid type stirrer, a nitrogen gas inlet tube, and a reflux condenser with a condenser tube with a ball on a trap with a stopcock. Reacts in a stream of air: 44.9 g (200 mmol) of bicyclo [2,2,2] oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 3,5-diaminobenzoic acid 15 0.22 g (100 mmol), 3.0 g (30 mmol) of γ-valerolactone, 3.6 g (40 mmol) of pyridine, 300 g of N-methylpyrrolidone and 60 g of toluene were added to this at 180 ° C. while passing nitrogen gas. Toluene and water azeotrope was removed, and 29.4 g (100 milliliters) of 3,4,3 ′, 4′-biphenyltetracarboxylic dianhydride was added to the reaction mixture. Mol), 58.46 g (200 mmol) of 1,3-bis- (3-aminophenoxy) benzene, 268 g of N-methylpyrrolidone and 40 g of toluene were added, and the mixture was reacted for 1 hour at room temperature while passing nitrogen gas. The reaction was conducted for 3 hours while removing the azeotrope of toluene and water, and the polymerized polyimide had a polystyrene equivalent molecular weight of 58,900 in terms of number average molecular weight and 95,000 in terms of weight average molecular weight. Was 213-226 ° C., and the thermal decomposition start temperature was 422 ° C. The polyimide concentration in the obtained polyimide solution was 19.5% by weight.
実施例1
合成例1で得られた熱可塑性ポリイミド溶液を、リバースロール塗工機でカプトン100EN(商品名、東レ・デュポン株式会社製)に乾燥後5μmの厚みになるよう、塗工、乾燥し、熱可塑性ポリイミド層を設けた。市販(荏原ユージライト社製)の無電解メッキ用キットを用いて表1の工程で無電解銅めっき処理を行い、次いで、市販(荏原ユージライト社製)の装置及びキットを用いて、表2の工程で電解銅めっき処理を行った。金属層厚み12μmの本発明の金属複合基板が得られた。評価結果を表3に示す。なお、表1及び表2に記載されている各種溶液の名称は、荏原ユージライト社の商品名である。
Example 1
The thermoplastic polyimide solution obtained in Synthesis Example 1 is applied to a Kapton 100EN (trade name, manufactured by Toray DuPont Co., Ltd.) using a reverse roll coating machine, and then dried to a thickness of 5 μm. A polyimide layer was provided. Using a commercially available kit for electroless plating (manufactured by Sugawara Eugleite), electroless copper plating treatment was carried out in the steps shown in Table 1, and then, using a commercially available apparatus and kit (made by Sugawara Eugleite), Table 2 In this process, electrolytic copper plating was performed. A metal composite substrate of the present invention having a metal layer thickness of 12 μm was obtained. The evaluation results are shown in Table 3. In addition, the name of the various solutions described in Table 1 and Table 2 is a brand name of Ebara Eugelite.
実施例2
カプトン100EN(商品名)の代わりにアピカル25NPI(商品名、鐘淵化学株式会社製)を用いた以外は、全て実施例1と同様にして本発明の金属複合基板を得た。
Example 2
A metal composite substrate of the present invention was obtained in the same manner as in Example 1 except that Apical 25 NPI (trade name, manufactured by Kaneka Chemical Co., Ltd.) was used instead of Kapton 100EN (trade name).
実施例3
カプトン100EN(商品名)の代わりにユーピレックス25SGA(商品名、宇部興産株式会社製)を用いた以外は、全て実施例1と同様にして本発明の金属複合基板を得た。
Example 3
A metal composite substrate of the present invention was obtained in the same manner as in Example 1 except that Upilex 25SGA (trade name, manufactured by Ube Industries, Ltd.) was used instead of Kapton 100EN (trade name).
比較例1
カプトン100ENに熱可塑性ポリイミド層を設けなかった点を除いて、実施例1と同様の金属複合基板を得た。得られた金属複合基板の評価結果を表3に示す。
Comparative Example 1
A metal composite substrate similar to that of Example 1 was obtained except that the thermoplastic polyimide layer was not provided on Kapton 100EN. Table 3 shows the evaluation results of the obtained metal composite substrate.
比較例2
カプトン100ENにスパッタリングにより厚み10nmのNi薄膜を形成し、次いで、Ni膜上にスパッタリングにより厚み200nmの銅薄膜を形成した。その後、電気めっきにより厚み12μmの銅めっき層を設けた。評価結果を表3に示す。
Comparative Example 2
A 10 nm thick Ni thin film was formed on Kapton 100EN by sputtering, and then a 200 nm thick copper thin film was formed on the Ni film by sputtering. Thereafter, a copper plating layer having a thickness of 12 μm was provided by electroplating. The evaluation results are shown in Table 3.
比較例3
特許文献3に記載の方法で、金属層12μmの金属複合基板を得た。評価結果を表3に示す。
Comparative Example 3
A metal composite substrate having a metal layer of 12 μm was obtained by the method described in Patent Document 3. The evaluation results are shown in Table 3.
吸湿ハンダ耐熱:D−2/100+60s/280℃
Claims (8)
The metal composite film according to claim 1, wherein the metal layer has a thickness of 1 to 40 μm.
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JP2005088465A (en) * | 2003-09-19 | 2005-04-07 | Matsushita Electric Works Ltd | Manufacturing method for conductor-coated polyimide film and conductor-coated polyimide film |
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JP2008207550A (en) * | 2007-01-29 | 2008-09-11 | Somar Corp | Resin-coated metal foil and its manufacturing method, and metal clad laminated sheet using the resin-coated metal foil obtained by the manufacturing method and its manufacturing method |
JP2011251450A (en) * | 2010-06-01 | 2011-12-15 | Somar Corp | Laminate |
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