JP2006128287A - Electronic component and its manufacturing method - Google Patents

Electronic component and its manufacturing method Download PDF

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Publication number
JP2006128287A
JP2006128287A JP2004312459A JP2004312459A JP2006128287A JP 2006128287 A JP2006128287 A JP 2006128287A JP 2004312459 A JP2004312459 A JP 2004312459A JP 2004312459 A JP2004312459 A JP 2004312459A JP 2006128287 A JP2006128287 A JP 2006128287A
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electronic component
seam ring
substrate
brazing material
component element
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Haruto Ide
治人 井手
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component which provides stable characteristics even if a brazing material for bonding a seam ring and a solvent remaining in the brazing material are remelted, and to provide its manufacturing method. <P>SOLUTION: In the electronic component where an electronic component element 2 is mounted on the upper surface of a substrate 1, the seam ring 3 is bonded to the upper surface of the substrate 1 with the brazing material 5 so as to surround the electronic component element 2, and a metal cover 4 is joined with the upper part of the seam ring 3 by welding to hermetically seal the electronic component element 2, a groove 6 surrounding the lower surface of the seam ring 3 is formed and the brazing material 5 is formed in a region outside the groove 6. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、圧電素子等の電子部品素子を気密封止させた電子部品及びその製造方法に関するものである。   The present invention relates to an electronic component in which an electronic component element such as a piezoelectric element is hermetically sealed and a method for manufacturing the same.

従来より、圧電素子等の電子部品素子を気密封止させた電子部品が多くの用途に用いられている。   Conventionally, an electronic component in which an electronic component element such as a piezoelectric element is hermetically sealed has been used in many applications.

かかる従来の電子部品は、例えば図4に示すように、基板51の上面に電子部品素子52を搭載し、電子部品素子52を囲繞するようにシームリング53を基板51の上面にロウ材55で接合させるとともに、シームリング53の上部に金属蓋体54を溶接接合して電子部品素子52を気密封止させて成る構造を有している(例えば、特許文献1参照。)。   For example, as shown in FIG. 4, such a conventional electronic component has an electronic component element 52 mounted on the upper surface of a substrate 51, and a seam ring 53 is placed on the upper surface of the substrate 51 with a brazing material 55 so as to surround the electronic component element 52. The electronic component element 52 is hermetically sealed by welding a metal lid 54 to the upper part of the seam ring 53 (see, for example, Patent Document 1).

上記電子部品は以下の工程を含む製造方法によって製作される。   The electronic component is manufactured by a manufacturing method including the following steps.

先ず、基板51及びシームリング53を準備し、基板51の上面とシームリング53の下面とをロウ材55によって接合させる。次に、電子部品素子52を、基板51の上面でシームリング53に囲まれる領域に搭載した後に、金属蓋体54をシームリング53の上部に載置させ、金属蓋体54とシームリング53とを溶接して電子部品素子52を気密封止することにより、上記従来の電子部品が得られる。
特開2001−77660号公報(図9)
First, the substrate 51 and the seam ring 53 are prepared, and the upper surface of the substrate 51 and the lower surface of the seam ring 53 are joined by the brazing material 55. Next, after the electronic component element 52 is mounted on a region surrounded by the seam ring 53 on the upper surface of the substrate 51, the metal lid 54 is placed on the seam ring 53, and the metal lid 54, the seam ring 53, Are welded to hermetically seal the electronic component element 52 to obtain the conventional electronic component.
Japanese Patent Laying-Open No. 2001-77660 (FIG. 9)

しかしながら、上述した従来の電子部品においては、電子部品を回路配線基板上に実装した場合、リフロー等の工程で加熱された際に、シームリング53と基板51とを接合するロウ材55及びロウ材55中に残存した溶剤が、熱により再溶融して電子部品素子52にまで到達することがあった。電子部品素子52に接触したロウ材55及びロウ材55中に残存する溶剤は、電子部品素子52の特性を変動させ、ひいては電子部品の特性を変動させてしまう。   However, in the above-described conventional electronic component, when the electronic component is mounted on the circuit wiring board, the brazing material 55 and the brazing material which join the seam ring 53 and the substrate 51 when heated in a process such as reflow. The solvent remaining in 55 may reach the electronic component element 52 by being remelted by heat. The brazing material 55 in contact with the electronic component element 52 and the solvent remaining in the brazing material 55 fluctuate the characteristics of the electronic component element 52 and consequently the characteristics of the electronic component.

上述した従来の電子部品の製造方法においても、金属蓋体54とシームリング53とを溶接する際に、シームリング53に加えられた熱がロウ材55を再溶融させ、再溶融したロウ材55及びロウ材55中に残存する溶剤が電子部品素子52に接触することがあった。   Also in the above-described conventional method of manufacturing an electronic component, when the metal lid 54 and the seam ring 53 are welded, the heat applied to the seam ring 53 remelts the brazing material 55 and remelts the brazing material 55. In addition, the solvent remaining in the brazing material 55 may come into contact with the electronic component element 52.

本発明は上記欠点に鑑み案出されたもので、その目的は、シームリングを接合するロウ材及びロウ材中に残存した溶剤が再溶融しても安定した特性が得られる電子部品及び電子部品の製造方法を提供することにある。   The present invention has been devised in view of the above-mentioned drawbacks, and the object thereof is an electronic component and an electronic component in which stable characteristics can be obtained even when a solvent remaining in the brazing material and a solder remaining in the brazing material are remelted. It is in providing the manufacturing method of.

本発明の電子部品は、基板の上面に電子部品素子を搭載し、該電子部品素子を囲繞するようにシームリングを前記基板の上面にロウ材で接合させるとともに、該シームリングの上部に金属蓋体を溶接接合して前記電子部品素子を気密封止させて成る電子部品において、前記シームリングの下面に周回する溝部が形成され、前記ロウ材が、前記溝部より外側の領域に形成されていることを特徴とするものである。   The electronic component of the present invention has an electronic component element mounted on the upper surface of the substrate, a seam ring is joined to the upper surface of the substrate with a brazing material so as to surround the electronic component element, and a metal lid is formed on the upper portion of the seam ring. In an electronic component formed by welding the body and hermetically sealing the electronic component element, a groove portion is formed around the lower surface of the seam ring, and the brazing material is formed in a region outside the groove portion. It is characterized by this.

また本発明の電子部品は、前記溝部が、前記シームリングの内周寄りに形成されていることを特徴とするものである。   The electronic component according to the present invention is characterized in that the groove is formed closer to the inner periphery of the seam ring.

更に本発明の電子部品は、前記シームリングの上面に、前記溝部と面対称な上面側の溝部を形成したことを特徴とするものである。   Furthermore, the electronic component of the present invention is characterized in that a groove on the upper surface side that is plane-symmetric with the groove is formed on the upper surface of the seam ring.

また更に本発明の電子部品の製造方法は、基板及び少なくとも下面に周回する溝部が形成されたシームリングを準備する工程と、基板の上面と、前記シームリングの下面の前記溝部より外側の領域とをロウ材によって接合する工程と、電子部品素子を、前記基板の上面で前記シームリングに囲まれる領域に搭載する工程と、金属蓋体を前記シームリングの上部に載置した後に、前記金属蓋体と前記シームリングとを溶接して前記電子部品素子を気密封止する工程と、を含むものである。尚、上面にも、前記溝部と面対称な上面側の溝部を形成したシームリングを用いてもよい。   Furthermore, the method of manufacturing an electronic component according to the present invention includes a step of preparing a substrate and a seam ring in which a groove portion that circulates at least on the lower surface, an upper surface of the substrate, and a region outside the groove portion on the lower surface of the seam ring. Bonding with a brazing material, mounting the electronic component element on a region surrounded by the seam ring on the upper surface of the substrate, and placing the metal lid on the seam ring, the metal lid Welding a body and the seam ring to hermetically seal the electronic component element. A seam ring in which a groove on the upper surface side that is plane-symmetric with the groove may be used on the upper surface.

本発明の電子部品によれば、シームリングの下面に溝部を形成し、溝部よりも外側の領域で基板とシームリングとを接合させ、シームリングの内周付近にロウ材が形成されないようにしたので、リフロー等によって加熱した際に再溶融したロウ材中に残存する溶剤が、溝部より内側に移動することが少なくなるので、電子部品素子は、ロウ材及びロウ材中に残存した溶剤と接触することがなく特性が安定したものとなる。   According to the electronic component of the present invention, a groove is formed on the lower surface of the seam ring, and the substrate and the seam ring are joined in a region outside the groove, so that the brazing material is not formed near the inner periphery of the seam ring. Therefore, since the solvent remaining in the remelted brazing material when heated by reflowing or the like is less likely to move inward from the groove, the electronic component element is in contact with the brazing material and the solvent remaining in the brazing material. The characteristics are stable without any problem.

また本発明の電子部品によれば、溝部を内周寄りに設定して接合部の面積を大きくさせたので、基板とシームリングとの接合強度が高いものとなる。   Further, according to the electronic component of the present invention, since the groove portion is set closer to the inner periphery and the area of the joint portion is increased, the joint strength between the substrate and the seam ring is high.

更に本発明の電子部品によれば、溝部をシームリングの上面及び下面の両方に形成したので、工程中に、シームリングの上下位置についての確認をしなくて済むようになる。   Furthermore, according to the electronic component of the present invention, since the groove portions are formed on both the upper surface and the lower surface of the seam ring, it is not necessary to check the vertical position of the seam ring during the process.

また更に本発明の電子部品の製造方法によれば、シームリングの内周付近にロウ材が形成されていない基板上に電子部品素子を搭載するので、電子部品素子を搭載する工程において、リフロー等による熱が加わってもロウ材及びロウ材中に残存した溶剤が再溶融して電子部品素子に到達しにくくなり、また、金属蓋体を溶接する工程においても、シームリングと基板とを接合するロウ材中に残存した溶剤が、熱によって再溶融して電子部品素子に到達することが少なくなり、電子部品素子の特性が安定したものとなる。   Furthermore, according to the method for manufacturing an electronic component of the present invention, since the electronic component element is mounted on the substrate on which the brazing material is not formed near the inner periphery of the seam ring, reflow or the like is performed in the step of mounting the electronic component element. Even when heat is applied, the brazing material and the solvent remaining in the brazing material are remelted, making it difficult to reach the electronic component element. Also, in the process of welding the metal lid, the seam ring and the substrate are joined. The solvent remaining in the brazing material is less likely to remelt by heat and reach the electronic component element, thereby stabilizing the characteristics of the electronic component element.

以下、本発明の電子部品を添付の図面に基づいて詳細に説明する。   Hereinafter, an electronic component of the present invention will be described in detail with reference to the accompanying drawings.

図1は本発明の一実施形態に係る電子部品の分解斜視図、図2は本発明の一実施形態に係る電子部品の断面図、図3は図2の丸印zの部分の要部拡大図であり、同図に示す電子部品は大略的に電子部品素子2、基板1、シームリング3及び金属蓋体4からなる構造を有している。   FIG. 1 is an exploded perspective view of an electronic component according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the electronic component according to an embodiment of the present invention, and FIG. The electronic component shown in FIG. 1 has a structure generally composed of an electronic component element 2, a substrate 1, a seam ring 3, and a metal lid 4.

電子部品素子2は、例えば弾性表面波素子及び水晶振動素子等の圧電素子や、半導体素子等であり、基板表面に微細配線が形成され、特定の特性・機能を有する。   The electronic component element 2 is, for example, a piezoelectric element such as a surface acoustic wave element or a quartz crystal vibration element, a semiconductor element, or the like. A fine wiring is formed on the surface of the substrate and has specific characteristics / functions.

電子部品素子2が上面に搭載される基板1は、複数個の絶縁層を積層させた構造を有しており、上面には、周回するように導体パターン1cを形成し、その内側には凹部1aが形成され、凹部1a内にはさらに開口の小さなキャビティ10aが形成されている。キャビティ10aの開口面には、端部がキャビティ10aの開口部と接する導体パターン1bが形成され、キャビティ10aの底面には、外周部の一部がキャビティ10aの内壁と接するように導体パターン1dが形成されている。   A substrate 1 on which an electronic component element 2 is mounted has a structure in which a plurality of insulating layers are laminated. A conductor pattern 1c is formed on the upper surface so as to circulate, and a recess is formed on the inner side. 1a is formed, and a cavity 10a having a smaller opening is formed in the recess 1a. A conductor pattern 1b whose end is in contact with the opening of the cavity 10a is formed on the opening surface of the cavity 10a, and a conductor pattern 1d is formed on the bottom of the cavity 10a so that a part of the outer peripheral portion is in contact with the inner wall of the cavity 10a. Is formed.

基板1を構成する絶縁層の材質としては、例えばアルミナ、ムライト、ガラスセラミック等の気密性に優れるセラミック材料が用いられ、導体パターン1b、1c、1dは、例えばWやMo等の金属材料が用いられる。尚、導体パターン1b、1c、1dの表面には、表面の酸化を防止する目的で、Au等のメッキ膜が形成され、半田耐熱性及びワイヤボンディング性を高める目的で、中間層としてNiメッキ膜が形成される。Auメッキ膜は、0.1〜0.6μmに設定され、Niメッキ膜は、1〜6μmに設定される。   As the material of the insulating layer constituting the substrate 1, for example, a ceramic material having excellent airtightness such as alumina, mullite, and glass ceramic is used. For the conductor patterns 1b, 1c, and 1d, for example, a metal material such as W or Mo is used. It is done. Note that a plating film such as Au is formed on the surface of the conductor patterns 1b, 1c, and 1d for the purpose of preventing surface oxidation, and an Ni plating film is used as an intermediate layer for the purpose of improving solder heat resistance and wire bonding properties. Is formed. The Au plating film is set to 0.1 to 0.6 μm, and the Ni plating film is set to 1 to 6 μm.

上記基板1に対し、電子部品素子2は、キャビティ10a内に収容され、下面を基板1の導体パターン1dに導電性樹脂等を用いて固定され、電子部品素子2の上面に形成された電極パッド2aと基板1の導体パターン1bとがワイヤボンディングされた構造を有している。   The electronic component element 2 is accommodated in the cavity 10a with respect to the substrate 1, the lower surface is fixed to the conductor pattern 1d of the substrate 1 using a conductive resin or the like, and the electrode pad formed on the upper surface of the electronic component element 2 2a and the conductor pattern 1b of the board | substrate 1 have the structure bonded by wire bonding.

電子部品素子2は、上記基板1と、電子部品素子2を囲繞するように基板1の上面に接合されたシームリング3と、シームリング3の上部に溶接接合される金属蓋体4とで形成される空間内に気密封止される。   The electronic component element 2 is formed by the substrate 1, a seam ring 3 joined to the upper surface of the substrate 1 so as to surround the electronic component element 2, and a metal lid 4 welded and joined to the upper part of the seam ring 3. In a sealed space.

シームリング3の材質としては、例えばコバール等が用いられ、表面にはNiメッキが1〜6μm形成され、更にその表面にAuメッキが0.1〜0.6μm形成される。金属蓋体4の材質としては例えばコバール等が用いられ、その表面にはNiメッキが1〜6μm形成される。   As the material of the seam ring 3, for example, Kovar is used. Ni plating is formed on the surface by 1 to 6 μm, and Au plating is further formed on the surface by 0.1 to 0.6 μm. For example, Kovar is used as the material of the metal lid 4, and Ni plating is formed on the surface of 1 to 6 μm.

基板1とシームリング3との接合には、ロウ材5が用いられる。ロウ材5は、材質としては例えば銀ロウ等が用いられ、基板1の上面に形成された導体パターン1cとシームリング3の下面との間に、例えば5〜30μmの薄い層状に形成される。   For joining the substrate 1 and the seam ring 3, a brazing material 5 is used. The brazing material 5 is made of, for example, silver solder or the like, and is formed in a thin layer of, for example, 5 to 30 μm between the conductor pattern 1 c formed on the upper surface of the substrate 1 and the lower surface of the seam ring 3.

そして本実施形態の電子部品において、ロウ材5は、シームリング3の下面に周回するように形成された溝部6より外側の領域に形成させた。   In the electronic component of the present embodiment, the brazing material 5 is formed in a region outside the groove 6 formed so as to circulate on the lower surface of the seam ring 3.

また、シームリング3の上面に、下面側の溝部6と面対称な上面側溝部7(以下、単に溝部とうい)7が形成されている。   Further, on the upper surface of the seam ring 3, an upper surface side groove portion 7 (hereinafter simply referred to as a groove portion) 7, which is symmetrical with the lower surface side groove portion 6, is formed.

このように、溝部6よりも外側の領域で基板1とシームリング3とを接合させ、シームリング3の内周付近にはロウ材5が形成されないようにしたので、リフロー等によって加熱した際に再溶融したロウ材5及びロウ材5中に残存した溶剤が、溝部6より内側に移動することが少なくなり、電子部品素子2は、ロウ材5中に残存した溶剤と接触することがなく特性が安定したものとなる。   As described above, since the substrate 1 and the seam ring 3 are joined in the region outside the groove portion 6 so that the brazing material 5 is not formed in the vicinity of the inner periphery of the seam ring 3, when heated by reflow or the like, The remelted brazing material 5 and the solvent remaining in the brazing material 5 are less likely to move inward from the groove 6, and the electronic component element 2 is not in contact with the solvent remaining in the brazing material 5. Becomes stable.

溝部6は、再溶融したロウ材5及びロウ材5中に残存した溶剤を溜める役割も有しているので、深さは10μm以上、幅は20μm以上あることが好ましい。   Since the groove 6 also has a role of storing the remelted brazing material 5 and the solvent remaining in the brazing material 5, the depth is preferably 10 μm or more and the width is preferably 20 μm or more.

また本実施形態において、溝部6は、シームリング3を横断する幅方向の中心よりも内寄りに設定して接合部の面積を大きくさせ、基板1とシームリング3との接合強度が高くなるようにした。   Further, in the present embodiment, the groove 6 is set inward from the center in the width direction crossing the seam ring 3 to increase the area of the joint, so that the joint strength between the substrate 1 and the seam ring 3 is increased. I made it.

本実施形態の電子部品は以下の製造方法によって製作される。   The electronic component of this embodiment is manufactured by the following manufacturing method.

(工程A)先ず、基板1及び上面及び下面に周回する溝部6、上面側の溝部7が形成されたシームリング3を準備する。   (Step A) First, the seam ring 3 in which the substrate 1, the groove portion 6 that circulates on the upper surface and the lower surface, and the groove portion 7 on the upper surface side is prepared.

基板1は、例えば従来から知られたグリーンシート法により製作される。具体的には、セラミックを主成分とした無機粉末を有機バインダ中に分散させて成るセラミックグリーンシートに、金型を用いてキャビティ1aに対応する孔を形成し、得られたセラミックグリーンシートを積層した後に焼成することによって製作される。   The substrate 1 is manufactured, for example, by a conventionally known green sheet method. Specifically, holes corresponding to the cavity 1a are formed using a mold on a ceramic green sheet in which inorganic powder mainly composed of ceramic is dispersed in an organic binder, and the obtained ceramic green sheet is laminated. And then fired.

基板1の表面に形成される導体パターン1b、1c、1dは、上記基板1を製作する際、セラミックグリーンシート上にスクリーン印刷法等を用いてW等の金属粉末をビヒクル中に分散させて成る導体ペーストを塗布し、焼成により被膜形成された金属メタライズの表面にAu、Ni等のメッキ膜を形成することにより得られる。   Conductor patterns 1b, 1c, and 1d formed on the surface of the substrate 1 are obtained by dispersing metal powder such as W in a vehicle using a screen printing method or the like on a ceramic green sheet when the substrate 1 is manufactured. It is obtained by applying a conductive paste and forming a plating film of Au, Ni or the like on the surface of the metal metallized film formed by firing.

溝部6,7をシームリング3の上面及び下面の両方に形成しておけば、工程中に、シームリング3の上下位置についての確認をしなくて済むようになる。   If the groove portions 6 and 7 are formed on both the upper surface and the lower surface of the seam ring 3, it is not necessary to check the vertical position of the seam ring 3 during the process.

(工程B)次に、基板1の上面に、周回するように形成された導体パターン1c上に銀ロウ等のロウ材5を被膜形成しておき、この上にシームリング3を載置させ、加熱処理してシームリング3を接合する。   (Step B) Next, a brazing material 5 such as silver brazing is formed on the upper surface of the substrate 1 on the conductive pattern 1c formed so as to circulate, and the seam ring 3 is placed thereon. The seam ring 3 is joined by heat treatment.

本実施形態においては、ロウ材5は、シームリング3の下面の溝部6より外側の領域に対応する導体パターン1cの領域に形成される。   In the present embodiment, the brazing material 5 is formed in the region of the conductor pattern 1 c corresponding to the region outside the groove 6 on the lower surface of the seam ring 3.

(工程C)次に、電子部品素子2を、基板1の上面でシームリング3に囲まれる領域に搭載する。   (Step C) Next, the electronic component element 2 is mounted on a region surrounded by the seam ring 3 on the upper surface of the substrate 1.

シームリング3の内周付近にロウ材5が形成されていない基板1上に電子部品素子2を搭載するので、電子部品素子2を搭載する工程において、リフロー等による熱が加わってもロウ材5及びロウ材5中に残存した溶剤が再溶融して電子部品素子2に到達しにくくなる。   Since the electronic component element 2 is mounted on the substrate 1 on which the brazing material 5 is not formed in the vicinity of the inner periphery of the seam ring 3, the brazing material 5 is applied even when heat due to reflow or the like is applied in the step of mounting the electronic component element 2. In addition, the solvent remaining in the brazing material 5 is remelted and hardly reaches the electronic component element 2.

(工程D)そして、金属蓋体4をシームリング3の上部に載置した後に、金属蓋体4とシームリング3とを溶接して電子部品素子2を気密封止することにより電子部品が製作される。   (Step D) Then, after placing the metal lid 4 on the seam ring 3, the metal lid 4 and the seam ring 3 are welded to hermetically seal the electronic component element 2 to produce an electronic component. Is done.

この工程においても、シームリング3と基板1とを接合するロウ材5及びロウ材5中に残存した溶剤が、熱によって再溶融して電子部品素子2に到達することが少なくなり、電子部品素子2の特性が安定したものとなる。   Also in this process, the brazing material 5 that joins the seam ring 3 and the substrate 1 and the solvent remaining in the brazing material 5 are less likely to re-melt by heat and reach the electronic component element 2. The characteristic of 2 is stable.

シームリング3の四隅部は、溶接時に印加される熱量が多いので、溝部6を、シームリング3の四隅部において各辺部よりも幅が広くなるようにしておくと、特にシームリング3の上面で、過剰に溶融した分についても充分に溜めることができる。   Since the four corners of the seam ring 3 have a large amount of heat applied at the time of welding, it is particularly preferable that the groove 6 has a width wider than each side at the four corners of the seam ring 3. Thus, the excessively melted portion can be sufficiently accumulated.

かくして本実施形態の電子部品は、例えば電子部品素子として弾性表面波素子を用いた場合、回路配線基板上に実装した際に、特定の周波数帯域を選択的に通過させる高周波フィルタや、所定の周波数で発振する回路に用いられる共振器として機能する。   Thus, the electronic component of the present embodiment, for example, when a surface acoustic wave element is used as an electronic component element, a high frequency filter that selectively passes a specific frequency band when mounted on a circuit wiring board, or a predetermined frequency It functions as a resonator used in a circuit that oscillates.

尚、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良が可能である。   In addition, this invention is not limited to the above-mentioned embodiment, A various change and improvement are possible in the range which does not deviate from the summary of this invention.

例えば、上述した実施形態において、電子部品素子2は、凹部1a内に形成されたキャビティ10aに収納されているが、キャビティ10aを形成しない構成にしても構わず、更に凹部1aを形成しない構成にしても構わない。   For example, in the above-described embodiment, the electronic component element 2 is housed in the cavity 10a formed in the recess 1a. However, the cavity 10a may not be formed, and the recess 1a may not be formed. It doesn't matter.

図1は本発明の一実施形態に係る電子部品の分解斜視図である。FIG. 1 is an exploded perspective view of an electronic component according to an embodiment of the present invention. 図2は本発明の一実施形態に係る電子部品の断面図である。FIG. 2 is a cross-sectional view of an electronic component according to an embodiment of the present invention. 図3は図2の丸領域の要部拡大図である。FIG. 3 is an enlarged view of a main part of the circle region in FIG. 従来の電子部品の断面図である。It is sectional drawing of the conventional electronic component.

符号の説明Explanation of symbols

1・・・基板
1a・・・凹部
10a・・・キャビティ
1b、1c、1d・・・導体パターン
2・・・電子部品素子
2a・・・電極パッド
3・・・シームリング
4・・・金属蓋体
5・・・ロウ材
DESCRIPTION OF SYMBOLS 1 ... Board | substrate 1a ... Recessed part 10a ... Cavity 1b, 1c, 1d ... Conductor pattern 2 ... Electronic component element 2a ... Electrode pad 3 ... Seam ring 4 ... Metal lid Body 5 ... brazing material

Claims (4)

基板の上面に電子部品素子を搭載し、該電子部品素子を囲繞するようにシームリングを前記基板の上面にロウ材で接合させるとともに、該シームリングの上部に金属蓋体を溶接接合して前記電子部品素子を気密封止させて成る電子部品において、
前記シームリングの下面に周回する溝部が形成され、前記ロウ材が、前記溝部より外側の領域に形成されていることを特徴とする電子部品。
An electronic component element is mounted on the upper surface of the substrate, and a seam ring is bonded to the upper surface of the substrate with a brazing material so as to surround the electronic component element, and a metal lid is welded and bonded to the upper portion of the seam ring. In an electronic component formed by hermetically sealing an electronic component element,
An electronic component, wherein a groove portion is formed around the lower surface of the seam ring, and the brazing material is formed in a region outside the groove portion.
前記溝部が、前記シームリングの内周寄りに形成されていることを特徴とする請求項1に記載の電子部品。 The electronic component according to claim 1, wherein the groove is formed closer to an inner periphery of the seam ring. 前記シームリングの上面に、前記溝部と面対称な上面側溝部を形成したことを特徴とする請求項1に記載の電子部品。 The electronic component according to claim 1, wherein an upper surface side groove portion that is plane-symmetric with the groove portion is formed on an upper surface of the seam ring. 基板及び少なくとも下面に周回する溝部が形成されたシームリングを準備する工程と、
基板の上面と、前記シームリングの下面の前記溝部より外側の領域とをロウ材によって接合する工程と、
電子部品素子を、前記基板の上面で前記シームリングに囲まれる領域に搭載する工程と、
金属蓋体を前記シームリングの上部に載置した後に、前記金属蓋体と前記シームリングとを溶接して前記電子部品素子を気密封止する工程と、
を含む電子部品の製造方法。
Preparing a seam ring formed with a substrate and at least a groove that circulates on the lower surface;
Bonding the upper surface of the substrate and the region outside the groove on the lower surface of the seam ring with a brazing material;
Mounting an electronic component element in a region surrounded by the seam ring on the upper surface of the substrate;
A step of hermetically sealing the electronic component element by welding the metal lid and the seam ring after placing the metal lid on the seam ring; and
A method for manufacturing an electronic component comprising:
JP2004312459A 2004-10-27 2004-10-27 Electronic component and its manufacturing method Pending JP2006128287A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009207067A (en) * 2008-02-29 2009-09-10 Kyocera Kinseki Corp Piezoelectric device
JP2018014581A (en) * 2016-07-20 2018-01-25 日本電波工業株式会社 Package and piezoelectric device
WO2021010153A1 (en) * 2019-07-16 2021-01-21 スタンレー電気株式会社 Semiconductor device and manufacturing method for same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009207067A (en) * 2008-02-29 2009-09-10 Kyocera Kinseki Corp Piezoelectric device
JP2018014581A (en) * 2016-07-20 2018-01-25 日本電波工業株式会社 Package and piezoelectric device
WO2021010153A1 (en) * 2019-07-16 2021-01-21 スタンレー電気株式会社 Semiconductor device and manufacturing method for same
JP2021015949A (en) * 2019-07-16 2021-02-12 スタンレー電気株式会社 Semiconductor device and manufacturing method thereof
JP7245132B2 (en) 2019-07-16 2023-03-23 スタンレー電気株式会社 Semiconductor device and its manufacturing method

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