JP2006128250A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that has a package formed by transfer molding, can be inspected and adjusted easily, and is reduced in size. <P>SOLUTION: The semiconductor device 1 contains a resin package 2, a plurality of electrode terminals 4 projected to the lateral side from the package 2, and an insulating coating 6 which prevents erroneous contact with terminals for inspection or adjustment. The electrode terminals 4 are used in the normally used state of the semiconductor device 1. Under the insulating coating 6, the terminals for inspection or adjustment are formed so that end faces of the terminals may be exposed on the surface of the resin package 2. Internal signals can be confirmed and signals for adjustment can be inputted by bringing a probe 8 into contact with the terminals for inspection or adjusting by peeling the insulating coating 6 when needed. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device, and more particularly to a terminal of a semiconductor device.

  Since mass production is possible and the cost is low, a semiconductor device that is resin-sealed by transfer molding is often used for mass-produced products. In the transfer molding process, a lead frame on which a chip is mounted is set on a preheated mold, and a resin whose viscosity is lowered by heating is injected into the mold by being pressurized and cured. The transfer mold method enables a plurality of moldings at a time, and is excellent in productivity.

Japanese Patent Application Laid-Open No. 9-64080 (Patent Document 1) discloses a semiconductor device (CSP: Chip Scale Package) that is substantially equal to the chip size and can be sealed by transfer molding and manufactured in a single mold. Has been. One embodiment of this semiconductor device discloses that a part of a lead is exposed to the outside from a side surface of a package to form a protrusion. This protrusion can be used as a terminal for testing the operation of the semiconductor element. Even after the semiconductor device is mounted on the circuit board using the terminal provided on the bottom, an inspection probe or the like is brought into contact with the protrusion. Can be inspected.
JP-A-9-64080 (page 10, FIG. 11) Japanese Patent Laid-Open No. 2003-347459

  In recent years, as seen in hybrid vehicles and electric vehicles, semiconductor modules using power elements that control a large current are used for driving motors and generators.

  Advances in control technology and advances in semiconductor integration technology make it possible to house the power element and the control element in the same module. Such a module is called a so-called intelligent power module.

  As the number of production increases, it is becoming possible to obtain the merit of reducing the cost for adopting the transfer mold for such a semiconductor module.

  FIG. 7 is a diagram for explaining a control unit incorporated in the intelligent power module.

  Referring to FIG. 7, an IC 202 in which a control unit is integrated is accommodated in the resin package 200. The IC 202 includes a block 204 having a programmable function and blocks 206 and 208 that perform signal processing.

  However, when the power element adopting the transfer mold is made intelligent, a terminal that is not used at the time of steady use such as signal input at the time of adjustment using the programmable function and signal observation at the time of inspection is necessary.

  For example, a signal input at the time of adjustment is necessary for setting to change programmably such as constant adjustment of a built-in switching element, offset adjustment of a current sensor and temperature sensor, and current adjustment of a constant current source.

  For example, as a signal to be observed at the time of inspection, a module fail signal, a current sense value, a temperature sense value, and the like can be considered.

  The number of electrodes is increased by providing dedicated electrodes similar to normal electrodes for motor drive signal output, power supply, etc. as terminals for signal input during adjustment and signal observation during inspection. However, there is a concern that hinders downsizing of the module.

  An object of the present invention is to provide a semiconductor device which has a package by transfer molding, is easy to inspect and adjust, and is miniaturized.

  In summary, the present invention provides a semiconductor device, a semiconductor element, a resin package for housing the semiconductor element in a resin seal, and a first device for transmitting and receiving a signal or current to the semiconductor element in a steady use state. And a second terminal for transmitting and receiving a signal or current to the semiconductor element in an adjustment state or an inspection state different from the steady use state. The first terminal has a shape in which one end protrudes from the resin package, and the second terminal is formed such that the end face of one end is exposed on the surface of the resin package.

  Preferably, the direction in which the second terminal is drawn out to the outside of the resin package is the same as the direction in which the first terminal is drawn out to the outside of the resin package.

  More preferably, the resin package includes an upper surface and a lower surface on which no terminal is formed, and a side surface on which both the first and second terminals are formed so that the heat radiating cooler can be attached.

  More preferably, the semiconductor device further includes first and second heat equalizing plates that are supported by the resin package so that each one surface is exposed on the upper surface and the lower surface, respectively, and diffuses the heat of the semiconductor element.

  Preferably, the semiconductor element includes a power element unit having a power element for controlling the main current and a control unit for controlling conduction of the power element. The first terminal is electrically connected to the power element unit, and the second terminal is electrically connected to the control unit.

  Preferably, the cross-sectional area of the first lead portion from the semiconductor element to the first terminal is larger than the cross-sectional area of the second lead portion from the semiconductor element to the second terminal.

  Preferably, the semiconductor element includes a power element unit having a power element for controlling the main current and a control unit for controlling conduction of the power element. The control unit collectively outputs a plurality of internal signals to the first terminal, and outputs some or all of the plurality of internal signals individually to the second terminal.

  Preferably, the semiconductor element includes a power element unit having a power element that controls a main current, and a current sensor that detects a current flowing through the power element. The first terminal is electrically connected to the power element unit, and the second terminal is a terminal that provides a gain adjustment signal to the current sensor.

  Preferably, the semiconductor element includes a power element unit having a power element for controlling a main current and a voltage monitoring unit for monitoring a voltage of the power element. The first terminal is electrically connected to the power element unit, and the second terminal is a terminal that provides a gain adjustment signal to the voltage monitoring unit.

  Preferably, the end face of the second terminal is covered with a peelable insulating layer.

  According to the present invention, since there is a terminal used in the adjustment or inspection state in addition to the terminal used in the steady use state, later adjustment and inspection are facilitated. Further, since the space for adjustment or inspection is smaller than that for the regular use terminals, it is easy to cope with the increase in the number of terminals.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

  FIG. 1 is an external view of a semiconductor device of the present invention.

  Referring to FIG. 1, a semiconductor device 1 includes a resin package 2, a plurality of electrode terminals 4 projecting laterally from the resin package 2, and an insulating coating 6 for preventing erroneous contact with inspection or adjustment terminals. including. The plurality of electrode terminals 4 are terminals used in the steady use state of the semiconductor device 1. As will be described later, a terminal 10 for inspection or adjustment bent along the surface of the resin package is formed under the insulating coating 6.

  If necessary, the insulating coating 6 is peeled off, and the probe 8 comes into contact with the inspection or adjustment terminal, whereby an internal signal can be confirmed or an adjustment signal can be input.

  FIG. 2 is a perspective view showing the resin package of the semiconductor device 1 shown in FIG.

  Referring to FIG. 2, the resin package 2 accommodates a semiconductor chip 12 in which a power element and a control element are integrated. The semiconductor chip 12 is electrically connected to the plurality of electrode terminals 4 and the plurality of adjustment / inspection terminals 10.

  For example, the plurality of electrode terminals 4 and the plurality of adjustment / inspection terminals 10 are leads of the lead frame. Further, for example, the electrical connection may be made by a wire, or the lead and the electrode formed on the semiconductor element may be brazed directly by soldering or the like.

  Preferably, the lead of the adjustment / inspection terminal 10 has a smaller cross-sectional area than the lead of the terminal connected to the power element among the plurality of electrode terminals 4 and through which a large current flows. Can do.

  The lead-out direction of the plurality of adjustment / inspection terminals 10 to the outside of the resin package is the same as the lead-out direction of the plurality of electrode terminals 4 to the outside of the resin package.

  That is, no terminals are formed on the upper and lower surfaces of the resin package 2 so that a heat radiating cooler can be attached. A plurality of electrode terminals 4 and a plurality of adjustment / inspection terminals 10 are drawn out on the same side surface for easy assembly and inspection.

  FIG. 3 is a view for explaining a package surface portion of the adjustment / inspection terminal 10.

  Referring to FIGS. 1 and 3, adjustment / inspection terminal 10 is formed on the surface of the resin package such that the end face is exposed. For example, the lead may be bent along the surface of the resin package so that it can be easily contacted with the probe. Alternatively, the leads may be bent in advance so as to be flush with the package surface, and then resin sealing may be performed.

  The adjustment / inspection terminal 10 is provided with an insulating coating 6 thereon to prevent erroneous contact. For example, a resin thin plate made of the same material as the package resin may be attached after the resin sealing is completed to form the insulating coating 6. Further, for example, after the resin sealing is completed, an insulating coating may be partially applied to the adjustment / inspection terminal portion of the resin package 2.

  FIG. 4 is a circuit diagram for explaining an internal circuit of the semiconductor device 1.

  Referring to FIG. 4, semiconductor device 1 includes a control unit 22, a power element unit 24, insulating circuits 30 and 32, a current sensor 28, resistors 34 and 36, and a flywheel diode 26.

  The power element unit 24 includes an IGBT (Insulated Gate Bipolar Transistor) element 62 having an electrode terminal P1 connected to a collector and an electrode terminal P2 connected to an emitter, an electrode terminal P1 connected to the collector, and an emitter via a resistor 36. IGBT element 64 connected to electrode terminal P2 and temperature detecting diode 66.

  The IGBT element 62 is a main current control element, and the IGBT element 64 is a monitoring element for overcurrent detection. The flywheel diode 26 is connected in parallel to the IGBT element 62 with the direction from the emitter to the collector of the IGBT element 62 as the forward direction.

  The control unit 22 receives the power supply potential from the electrode terminal P0 and supplies it to the internal circuit of the control unit 22, and the voltage of the electrode terminal P1 according to the gain of the voltage sense input from the adjustment terminal TV. A voltage monitoring unit 42 for monitoring and an overvoltage detection unit 44 for receiving an output of the voltage monitoring unit 42 and detecting an overvoltage are included. The output of the voltage monitoring unit 42 is also output to the monitoring inspection terminal TM1.

  The control unit 22 further includes a constant current source 54 that supplies a constant current in the forward direction to the temperature detection diode 66, and an overheat detection unit 52 that detects the overheating of the IGBT by observing the terminal voltage of the temperature detection diode 66. A PWM modulation unit 56 that performs pulse width modulation by observing the terminal voltage of the temperature detection diode 66, and an overcurrent detection unit 60 that detects the overcurrent flowing through the IGBT by observing the terminal voltage of the resistor 36. .

  The output of the PWM modulator 56 is output to the monitoring inspection terminal TM2. The output of the overcurrent detection unit 60 is output to the inspection terminal TM3 for monitoring.

  The control unit 22 further receives an output from the overvoltage detection unit 44, the overcurrent detection unit 60, and the overheat detection unit 52 and outputs a signal NFAIL, and is enabled in response to the signal NFAIL. A buffer circuit 46 that receives a gate signal from the electrode terminal SG through the drive circuit 50 that drives the gates of the IGBTs 62 and 64 via the resistor 34 according to the output of the buffer circuit 46, the output of the PWM modulator 56, and the signal NFAIL And an AND circuit 58 for receiving.

  The output of the AND circuit 58 is output to the signal output electrode terminal SF via the insulation circuit 32. The electrode terminal SF outputs a signal in which a fail signal in which some abnormality has occurred and a temperature signal are superimposed.

  The insulating circuits 30 and 32 are circuits for electrically separating a power module that controls a high voltage of several hundred volts and an ECU that operates with a normal battery voltage of about 12 volts. For example, a photocoupler or a pulse transformer can be used as the insulation circuits 30 and 32.

  The current sensor 28 receives the operating power supply current from the power supply electrode terminal PS, and can adjust the gain according to the signal given from the adjustment terminal TI. The current sensor 28 detects the current flowing through the IGBT 62 and outputs it to the electrode terminal SI for current sensor output.

  In FIG. 4, electrode terminals P0, P1, P2, SG, SF, PS, and SI are terminals for transmitting and receiving a signal or current to the semiconductor device 1 in a steady use state.

  Terminals TV, TM1 to TM3, and TI are terminals for exchanging signals or currents to the semiconductor device 1 in an adjustment state or an inspection state different from the steady use state. As shown in FIG. 3, these terminals are formed such that one end face is exposed on the surface of the resin package.

  If the shape is changed in this way, it can be prevented that the terminal is mistakenly connected to the terminal for inspection or the terminal for adjustment during the experiment or product assembly.

  Furthermore, as described with reference to FIG. 3, the end surfaces of the inspection terminal and the adjustment terminal are covered with a peelable insulating layer to prevent erroneous contact.

  Preferably, since the main current flows through the electrode terminals P1 and P2, the thickness and width of the electrode are made larger than those of the other terminals, and the terminals other than the electrode terminals P1 and P2 are made thicker than the electrode terminals P1 and P2. The width may be reduced.

  FIG. 5 is an operation waveform diagram for explaining a signal output to electrode terminal SF in FIG.

  4 and 5, each of overvoltage detection unit 44, overheat detection unit 52, and overcurrent detection unit 60 outputs an H level signal when it is normal, and outputs an L level signal when it is abnormal.

  If the outputs of the overvoltage detection unit 44, the overheat detection unit 52, and the overcurrent detection unit 60 do not all attain an H level, the AND circuit 48 does not output an H level signal. That is, if at least one of the overvoltage detection unit 44, the overheat detection unit 52, and the overcurrent detection unit 60 outputs an L level signal, the AND circuit 48 outputs an L level signal.

  In FIG. 5, when any of the overvoltage detection unit 44, the overheat detection unit 52, and the overcurrent detection unit 60 detects an abnormality, the signal NFAIL output from the AND circuit 48 falls from the H level to the L level.

  Then, the signal indicating the temperature output to the electrode terminal SF is fixed at the L level. If this state continues for X seconds, the ECU (not shown) that has received the signal detects that there is an abnormality, and notifies the driver or mechanic with a display lamp or the like.

  Then, the mechanic can peel off the coating, apply the probe to the inspection terminal, observe the internal waveform, and analyze which part is abnormal. In this case, if the inspection terminals TM1 to TM3 are observed in order, it is possible to know which abnormality of overcurrent, overheating, or overvoltage has occurred.

[Modification]
FIG. 6 is a diagram illustrating a modification of the semiconductor device.

  Referring to FIG. 6, an electrode block 108 for taking out current is soldered to the surface of the semiconductor chip 110. The back surface of the semiconductor chip 110 is fixed to the conductive layer 116.

  The conductive layer 116 is, for example, a copper or aluminum layer. An insulating layer 114 is disposed below the conductive layer 116, and a heat equalizing plate 112 is disposed below the insulating layer 114.

  On the other hand, the electrode block 108 is fixed to the conductive layer 106. The conductive layer 106 is, for example, a copper or aluminum layer. An insulating layer 104 is disposed on the conductive layer 106, and a soaking plate 102 is disposed thereon.

  The soaking plates 102 and 112, the insulating layers 104 and 114, the conductive layers 106 and 116, the electrode block 108, and the semiconductor chip 108 are resin-sealed with the resin 100.

  Although not shown, a terminal for transmitting / receiving a control signal and an output current and a terminal for transmitting / receiving an inspection signal and an adjustment signal are formed by dividing the conductive layer 116 or 106, and the side surface on which the heat equalizing plate is not disposed. Drawn from.

  Thus, a transfer mold type semiconductor device incorporating a power element that handles a large current can obtain a better heat dissipation effect when a cooler is mounted on both sides if the soaking plate is molded together.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 is an external view of a semiconductor device of the present invention. FIG. 2 is a perspective view showing a resin package of the semiconductor device 1 shown in FIG. 1. 4 is a view for explaining a package surface portion of the adjustment / inspection terminal 10. FIG. 4 is a circuit diagram for explaining an internal circuit of the semiconductor device 1; FIG. FIG. 5 is an operation waveform diagram for explaining a signal output to an electrode terminal SF in FIG. 4. It is the figure which showed the modification of the semiconductor device. It is a figure for demonstrating the control part integrated in an intelligent power module.

Explanation of symbols

  1 semiconductor device, 2 resin package, 4, P0, P1, P2, SG, SF, PS, SI electrode terminal, 6 insulation coating, 8 probe, 10, TV, TM1 to TM3, TI terminal, 12,110 semiconductor chip, 22 control unit, 24 power element unit, 26 flywheel diode, 28 current sensor, 30, 32 insulation circuit, 34, 36 resistance, 40 power supply circuit, 42 voltage monitoring unit, 44 overvoltage detection unit, 46 buffer circuit, 50 drive circuit 52 overheat detection unit, 54 constant current source, 56 PWM modulation unit, 48, 58 AND circuit, 60 overcurrent detection unit, 62, 64 IGBT element, 66 temperature detection diode, 100 resin, 102, 112 soaking plate, 104, 114, insulating layer, 106, 116, conductive layer, 108 electrode block.

Claims (10)

A semiconductor element;
A resin package for containing the semiconductor element by resin sealing;
A first terminal for transferring a signal or current to the semiconductor element in a steady use state;
A second terminal connected to a node different from the first terminal, and for transmitting and receiving a signal or current to the semiconductor element in an adjustment state or an inspection state different from the steady use state;
The first terminal has a shape in which one end protrudes from the resin package;
The second terminal is a semiconductor device in which one end face is exposed on the surface of the resin package.   The semiconductor device according to claim 1, wherein a direction in which the second terminal is drawn out to the outside of the resin package is the same direction as a direction in which the first terminal is drawn out to the outside of the resin package. The resin package is
The upper surface and the lower surface on which no terminals are formed so that the heat dissipating cooler can be attached,
The semiconductor device according to claim 2, further comprising a side surface on which the first and second terminals are formed together.   4. The apparatus according to claim 3, further comprising first and second heat equalizing plates that are supported by the resin package so that each one surface is exposed on the surface of the upper surface and the lower surface, respectively, and diffuses heat of the semiconductor element. Semiconductor device. The semiconductor element is
A power element having a power element for controlling the main current;
A control unit for controlling conduction of the power element,
The first terminal is electrically connected to the power element unit,
The semiconductor device according to claim 1, wherein the second terminal is electrically connected to the control unit.   The cross-sectional area of the first lead portion from the semiconductor element to the first terminal is larger than the cross-sectional area of the second lead portion from the semiconductor element to the second terminal. The semiconductor device according to any one of the above. The semiconductor element is
A power element having a power element for controlling the main current;
A control unit for controlling conduction of the power element,
2. The control unit according to claim 1, wherein the control unit collectively outputs a plurality of internal signals to the first terminal, and outputs part or all of the plurality of internal signals to the second terminal individually. Semiconductor device. The semiconductor element is
A power element having a power element for controlling the main current;
A current sensor for detecting a current flowing in the power element,
The first terminal is electrically connected to the power element unit,
The semiconductor device according to claim 1, wherein the second terminal is a terminal that provides a gain adjustment signal to the current sensor. The semiconductor element is
A power element having a power element for controlling the main current;
A voltage monitoring unit for monitoring the voltage of the power element,
The first terminal is electrically connected to the power element unit,
The semiconductor device according to claim 1, wherein the second terminal is a terminal that provides a gain adjustment signal to the voltage monitoring unit.   The semiconductor device according to claim 1, wherein the end surface of the second terminal is covered with a peelable insulating layer.

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