JP2006128163A - Backlight apparatus and liquid crystal display device - Google Patents

Backlight apparatus and liquid crystal display device Download PDF

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JP2006128163A
JP2006128163A JP2004310535A JP2004310535A JP2006128163A JP 2006128163 A JP2006128163 A JP 2006128163A JP 2004310535 A JP2004310535 A JP 2004310535A JP 2004310535 A JP2004310535 A JP 2004310535A JP 2006128163 A JP2006128163 A JP 2006128163A
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light
guide plate
light emitting
backlight device
liquid crystal
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Shinko Nakajima
伸向 中嶋
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Sharp Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

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  • Planar Illumination Modules (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To eliminate the luminance unevenness of a backlight apparatus with the small dark region of a light guide plate even if it is the case where a plurality of LEDs are put in order and used in a row as a light source in a backlight apparatus of a planar light source type, in which a light from the light source is incident from the side face of the light guide plate and irradiates from the front surface. <P>SOLUTION: As the light source 1 of the backlight apparatus, an article is used that a semiconductor light emitting element 13 is sealed with a translucent resin 15, and that the light emitting surface of the translucent resin 15 is a curved surface or two or more flat surfaces. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明はバックライト装置および液晶表示装置に関し、より詳細には光源からの光が導光板の側面から入射し表面から出射するサイドライト方式のバックライト装置およびこれを用いた液晶表示装置に関するものである。   The present invention relates to a backlight device and a liquid crystal display device, and more particularly to a sidelight type backlight device in which light from a light source enters from a side surface of a light guide plate and exits from the surface, and a liquid crystal display device using the same. is there.

サイドライト方式のバックライト装置の光源としては、蛍光ランプなどの線状光源がこれまで多く用いられてきたが、ランプ寿命や小型軽量化に難があり、チップ型の発光ダイオード(LED、半導体発光装置)が近年多く用いられつつある。従来一般的に用いられているLEDは、図9に示すように、基板11の表面に実装された半導体発光素子13の周りが反射カバー19で囲まれ、反射カバー19内が透光性樹脂18で封止されたものであった。このLEDでは、半導体発光素子13からの光は、反射カバー19の上面開口、すなわち透光性樹脂18の上面S1のみから出射する。従来のバックライト装置では、このようなLED1’が導光板2(図10に図示)の光入射面21(図10に図示)に対向して所定間隔で列状に配置されていた。 As a light source of a sidelight type backlight device, a linear light source such as a fluorescent lamp has been used so far, but there are difficulties in reducing the lamp life and size and weight, and chip-type light emitting diodes (LEDs, semiconductor light emitting devices) In recent years, a large number of devices have been used. As shown in FIG. 9, the LED generally used conventionally is surrounded by a reflective cover 19 around the semiconductor light emitting element 13 mounted on the surface of the substrate 11, and the inside of the reflective cover 19 is a translucent resin 18. It was what was sealed with. In this LED, light from the semiconductor light emitting element 13 is emitted only from the upper surface opening of the reflection cover 19, that is, the upper surface S 1 of the translucent resin 18. In the conventional backlight device, such LEDs 1 ′ are arranged in rows at predetermined intervals so as to face the light incident surface 21 (shown in FIG. 10) of the light guide plate 2 (shown in FIG. 10).

ところが、図10に示すように、従来のLED1’では光照射領域角度が狭いため導光板2の光入射面側に光の通らない暗領域Bが生じ、これが原因でバックライト装置に輝度ムラが生じていた。   However, as shown in FIG. 10, in the conventional LED 1 ′, the light irradiation region angle is narrow, so that a dark region B where light does not pass is generated on the light incident surface side of the light guide plate 2, and this causes uneven brightness in the backlight device. It was happening.

そこでこのような輝度ムラを抑えるため、導光板2の光入射面21の、LED1’に対向する部分に凹凸を設けたり、導光板2上に種々の拡散シートを設けて光を散乱させる対策などが従来行われていた。
特開2004−177890号公報(特許請求の範囲、(0018)〜(000039)、図1〜図6)
Therefore, in order to suppress such luminance unevenness, the light incident surface 21 of the light guide plate 2 is provided with unevenness on the portion facing the LED 1 ′, or various diffusion sheets are provided on the light guide plate 2 to scatter light. Has been done in the past.
JP 2004-177890 A (Claims (0018) to (000030), FIGS. 1 to 6)

しかしながら従来の対策では輝度ムラを充分には抑えることができない。また近年、LEDの高輝度化に伴って、少ない数のLEDで従来と同様の明るさを確保できるようになってきた。ところが、LEDの数を減らすと、図11に示すように、暗領域Bが大きくなり輝度ムラが増大するという問題が生じる。   However, the conventional measures cannot sufficiently suppress luminance unevenness. In recent years, with the increase in the brightness of LEDs, it has become possible to ensure the same brightness with a small number of LEDs. However, if the number of LEDs is reduced, as shown in FIG. 11, there arises a problem that the dark region B becomes larger and luminance unevenness increases.

そこで、本発明はこのような従来の問題に鑑みてなされたものであり、その目的とするところは、光源としてのLEDの使用個数が少なく、しかも導光板における暗領域が小さく、輝度ムラの抑えられたサイドライト方式のバックライト装置を提供することにある。   Therefore, the present invention has been made in view of such conventional problems, and the object of the present invention is to reduce the number of LEDs used as light sources and to reduce luminance unevenness with a small dark area in the light guide plate. And providing a sidelight type backlight device.

また本発明の目的は、光源としてのLEDの使用個数が少なく、しかも輝度ムラの抑えられた液晶表示装置を提供することにある。   Another object of the present invention is to provide a liquid crystal display device in which the number of LEDs used as a light source is small and luminance unevenness is suppressed.

本発明によれば、表面に光出射面、側面に光入射面を有する導光板と、光入射面に対向して列状に複数配置された光源とを備え、前記光源として、半導体発光素子が透光性樹脂で封止され、透光性樹脂の光出射面が曲面又は2以上の平面である半導体発光装置を用いたことを特徴とするバックライト装置が提供される。   According to the present invention, a light guide plate having a light emitting surface on a surface and a light incident surface on a side surface, and a plurality of light sources arranged in a row facing the light incident surface, the semiconductor light emitting element is used as the light source. There is provided a backlight device characterized by using a semiconductor light-emitting device that is sealed with a light-transmitting resin and the light-emitting surface of the light-transmitting resin is a curved surface or two or more planes.

ここで、前記透光性樹脂を、垂直断面が台形状の6面体形状とし、光出射面が底面を除く5面となるようにしてもよい。   Here, the translucent resin may be a hexahedron having a trapezoidal vertical cross section, and the light emission surface may be five surfaces excluding the bottom surface.

また、半導体発光素子からの出射光を効率的に導光板に入射させると共に、導光板から液晶パネルの背面へ出射させるためには、導光板の光出射面と反対側の面に反射シートを設け、この反射シートの光源側の側部を延出させて、透光性樹脂の、導光板の光入射面に垂直な面を覆うようにしてもよい。あるいは、半導体発光素子から出射した光を、導光板の光入射面の方向に反射させる反射部材を半導体発光装置にさらに設けてもよい。   In addition, in order to efficiently allow the light emitted from the semiconductor light emitting element to enter the light guide plate and to be emitted from the light guide plate to the back surface of the liquid crystal panel, a reflective sheet is provided on the surface opposite to the light output surface of the light guide plate. The light source side of the reflection sheet may be extended to cover the surface of the translucent resin perpendicular to the light incident surface of the light guide plate. Alternatively, a reflective member that reflects the light emitted from the semiconductor light emitting element in the direction of the light incident surface of the light guide plate may be further provided in the semiconductor light emitting device.

また本発明によれば、液晶パネルと、この液晶パネルの背面側に配置されたバックライト装置とを備え、バックライト装置として請求項1〜3のいずれかに記載のものを使用したことを特徴とする液晶表示装置が提供される。   According to the invention, there is provided a liquid crystal panel and a backlight device arranged on the back side of the liquid crystal panel, and the backlight device according to any one of claims 1 to 3 is used. A liquid crystal display device is provided.

本発明のバックライト装置および液晶表示装置では、光出射面が曲面又は2以上の平面である半導体発光装置を用いるので、光照射領域角度が従来に比べ大きくなり、導光板に生じる暗領域が小さくなる。これにより、使用する半導体発光装置の個数を少なくしても、輝度ムラが小さく抑えられる。   In the backlight device and the liquid crystal display device of the present invention, since the light emitting surface is a semiconductor light emitting device having a curved surface or two or more planes, the light irradiation region angle is larger than before and the dark region generated in the light guide plate is small. Become. Thereby, even if the number of semiconductor light emitting devices to be used is reduced, the luminance unevenness can be kept small.

また、導光板の光出射面と反対側の面に反射シートを設け、この反射シートの光源側の側部を延出させて、半導体発光装置の、導光板の光入射面に垂直な面を覆うようにする、あるいは、半導体発光素子からの出射光を導光板の光入射面の方向に反射させる反射部材を半導体発光装置にさらに設けると、半導体発光素子からの出射光を効率的に導光板に入射させることができるようになる。   In addition, a reflection sheet is provided on the surface opposite to the light emitting surface of the light guide plate, and the side portion on the light source side of the reflection sheet is extended to provide a surface perpendicular to the light incident surface of the light guide plate of the semiconductor light emitting device. If the semiconductor light emitting device is further provided with a reflection member that covers or reflects the light emitted from the semiconductor light emitting element in the direction of the light incident surface of the light guide plate, the light emitted from the semiconductor light emitting element is efficiently guided by the light guide plate. It becomes possible to make it enter.

以下、本発明のバックライト装置および液晶表示装置について図に基づいて説明するが、本発明はこれらの実施形態に何ら限定されるものではない。   Hereinafter, the backlight device and the liquid crystal display device of the present invention will be described with reference to the drawings. However, the present invention is not limited to these embodiments.

図1に、本発明のバックライト装置および液晶表示装置の一例を示す概略断面図を示す。この図のバックライト装置では、上面開口の直方体形状のケース6内に、断面楔形状のアクリル樹脂板からなる導光板2と、導光板2の側方に配置された光源1とが備えられている。そして導光板2の表面側には拡散シート4、導光板2の裏面側には反射シート3がそれぞれ設けられ、導光板2の表面の対向上方に液晶パネル5が配置されている。   FIG. 1 is a schematic cross-sectional view showing an example of a backlight device and a liquid crystal display device of the present invention. In the backlight device of this figure, a light guide plate 2 made of an acrylic resin plate having a wedge-shaped cross section and a light source 1 disposed on the side of the light guide plate 2 are provided in a rectangular parallelepiped case 6 having an upper surface opening. Yes. A diffusion sheet 4 is provided on the surface side of the light guide plate 2, and a reflection sheet 3 is provided on the back side of the light guide plate 2, and a liquid crystal panel 5 is disposed above the surface of the light guide plate 2.

光源1から発せられた光は、導光板2の側面(光入射面)21から導光板2内に入射し、直接または反射シート3で反射して導光板2の表面(光出射面)22から出射する。そして、導光板2から出射した光は拡散シート4で拡散されて、液晶パネル5を背面から照明する。   The light emitted from the light source 1 enters the light guide plate 2 from the side surface (light incident surface) 21 of the light guide plate 2 and is reflected directly or by the reflection sheet 3 from the surface (light emission surface) 22 of the light guide plate 2. Exit. And the light radiate | emitted from the light-guide plate 2 is diffused by the diffusion sheet 4, and illuminates the liquid crystal panel 5 from the back.

図2に、図1で使用されている光源としての発光ダイオード(LED、半導体発光装置)1の一例を示す斜視図を示す。図2のLED1は、平面視長矩形状をした基板11の上面長手方向両端にそれぞれ電極部12,12’が形成されている。一方の電極部12の基板表面側にはボンディング部(不図示)が形成され、ここに半導体発光素子13がボンディングされている。もう一方の電極12’の基板表面側にはワイヤボンディング部(不図示)が形成され、半導体発光素子13の上面電極(不図示)とボンディングワイヤ14によって結線されている。そして、半導体発光素子13およびボンディングワイヤ14は透光性樹脂15で封止されている。   FIG. 2 is a perspective view showing an example of a light emitting diode (LED, semiconductor light emitting device) 1 as a light source used in FIG. In the LED 1 of FIG. 2, electrode portions 12 and 12 ′ are formed at both ends in the longitudinal direction of the upper surface of the substrate 11 having a rectangular shape in plan view. A bonding portion (not shown) is formed on the substrate surface side of one electrode portion 12, and a semiconductor light emitting element 13 is bonded thereto. A wire bonding portion (not shown) is formed on the substrate surface side of the other electrode 12 ′, and is connected to the upper surface electrode (not shown) of the semiconductor light emitting element 13 by the bonding wire 14. The semiconductor light emitting element 13 and the bonding wire 14 are sealed with a translucent resin 15.

この透光性樹脂15は垂直断面が台形状の6面体形状をしてなり、半導体発光素子13からの光は透光性樹脂15の底面を除く5面(S1〜S5)から出射する。このため、LED1の光照射領域角度は従来に比べ大きくなる。このLED1を用いたバックライト装置の平面図を図3に示す。 The translucent resin 15 has a hexahedral shape with a trapezoidal vertical cross section, and light from the semiconductor light emitting element 13 is emitted from five surfaces (S 1 to S 5 ) excluding the bottom surface of the translucent resin 15. . For this reason, the light irradiation area | region angle of LED1 becomes large compared with the past. A plan view of a backlight device using the LED 1 is shown in FIG.

図3から理解されるように、LED1の光照射領域角度が大きくなったことによって、導光板2の暗領域Bが小さくなっている。これにより本発明のバックライト装置では輝度ムラが格段に抑えられる。   As understood from FIG. 3, the dark region B of the light guide plate 2 is reduced as the light irradiation region angle of the LED 1 is increased. Thereby, in the backlight device of the present invention, luminance unevenness is remarkably suppressed.

本発明で使用する半導体発光装置は、図2に示すLEDに限定されるものではなく、透光性樹脂の光出射面が曲面又は2以上の平面を有してればどのようなものであってものよい。例えば図4に示すように、透光性樹脂16の断面形状がアーチ状で、光出射面S6が曲面であるもの(同図(a))や、透光性樹脂17の形状がかまぼこ状で、光出射面S7〜S9が曲面と平面とからなるもの(同図(b))などが挙げられる。 The semiconductor light-emitting device used in the present invention is not limited to the LED shown in FIG. 2, but can be any type as long as the light exit surface of the translucent resin has a curved surface or two or more planes. It's good. For example, as shown in FIG. 4, the translucent resin 16 has an arched cross section and the light exit surface S 6 is a curved surface (FIG. 4A), or the translucent resin 17 has a semi-cylindrical shape. The light emitting surfaces S 7 to S 9 are composed of a curved surface and a flat surface ((b) in the figure).

ところで、図2に示したLED1では、導光板2の光入射面21(図3に図示)に垂直な面S3,S5があり、これらの面から出射した光が導光板2の光入射面21に入射することはほとんどない。そこで、図5に示すように、導光板2の下面に取り付けた反射シート3’のLED側の側部を延出させて、LED1の光出射面S3,S5を覆うようにするのが望ましい。このような構成にすることによって、これまでは光出射面S3,S5から出射していた光が反射シート3’で反射されて、LED1の光出射面S1,S2,S4から出射し、導光板2へ入射する。これによりバックライト装置としての輝度が高くなる。 Incidentally, the LED 1 shown in FIG. 2 has surfaces S 3 and S 5 perpendicular to the light incident surface 21 (shown in FIG. 3) of the light guide plate 2, and light emitted from these surfaces is incident on the light guide plate 2. There is almost no incident on the surface 21. Therefore, as shown in FIG. 5, the side portion on the LED side of the reflection sheet 3 ′ attached to the lower surface of the light guide plate 2 is extended so as to cover the light emitting surfaces S 3 and S 5 of the LED 1. desirable. By adopting such a configuration, the light that has been emitted from the light emitting surfaces S 3 and S 5 so far is reflected by the reflecting sheet 3 ′, and from the light emitting surfaces S 1 , S 2 , and S 4 of the LED 1 . The light exits and enters the light guide plate 2. Thereby, the brightness | luminance as a backlight apparatus becomes high.

また、図6に示すように、LEDに反射部材10をさらに設け、光出射面S3,S5(図2に図示)から出射していた光を反射部材10で反射させて、導光板2へ入射させるようにしてもよい。これにより、前記と同様に、バックライト装置としての輝度が高くなる。 Further, as shown in FIG. 6, the LED is further provided with a reflecting member 10, and the light emitted from the light emitting surfaces S 3 and S 5 (shown in FIG. 2) is reflected by the reflecting member 10, so that the light guide plate 2. You may make it inject into. Thereby, the brightness | luminance as a backlight apparatus becomes high like the above.

図2に示すLED1は例えば次のようにして作製される。図2のLEDの製造工程図の一例を図7に示す。銅箔71を両面に貼着した絶縁性基板11に金型やルータで複数本のスリット81を設けて複数本の桟72を形成する(同図(a))。そしてフォトレジストの塗布・露光・現像を行って、電極部の上面部と下面部となる電極パターン部分をフォトレジストで被覆し、このレジストパターンをエッチレジストとして不要部分の銅箔71をエッチングにより除去する(同図(b))。次に、無電解メッキにより端子電極の側面部となる桟の側面にCu層73を形成する(同図(c))。そして、桟72の側面を含む電極パターン部分にCu,Ni,Auの各層74を電解メッキにより積層形成する(同図(d))。   LED1 shown in FIG. 2 is produced as follows, for example. An example of a manufacturing process diagram of the LED of FIG. 2 is shown in FIG. A plurality of slits 81 are provided on the insulating substrate 11 with the copper foil 71 adhered on both sides by a mold or a router to form a plurality of crosspieces 72 (FIG. 1A). Then, the photoresist is coated, exposed and developed to cover the upper and lower electrode pattern portions of the electrode with photoresist, and this resist pattern is used as an etch resist to remove the unnecessary copper foil 71 by etching. (FIG. (B)). Next, a Cu layer 73 is formed on the side surface of the cross-piece that becomes the side surface portion of the terminal electrode by electroless plating ((c) in the figure). Then, each layer 74 of Cu, Ni, and Au is laminated on the electrode pattern portion including the side surface of the crosspiece 72 by electrolytic plating ((d) in the figure).

上記のように作製した絶縁性基板11に対し、各桟72における一方の電極部12上に、それぞれ半導体発光素子13をボンディングする。そして、各半導体発光素子13の上面電極(不図示)ともう一方の電極部12’との間をボンディングワイヤ14によって結線する(同図(e))。この状態の平面図を図8に示す。そして、各桟72にその長手方向に並ぶ各チップボンディング部の全てに半導体発光素子13をボンディングし、かつ所定のワイヤボンディングを行った後、例えばトランスファモールド法によって各桟72の上面をその長手方向に透光性樹脂15で一連に覆って封止体を形成する(図7(f))。封止体の形状は、ここで用いる金型の形状によって自由に形成することができ、本発明ではこの封止体の形状として曲面又は2以上の平面を備えるようにする。そしてダイシングなどで一定長さごとに桟72を切断して図2に示したLEDを得る。   The semiconductor light emitting element 13 is bonded to the insulating substrate 11 manufactured as described above on one electrode portion 12 of each crosspiece 72. Then, the upper surface electrode (not shown) of each semiconductor light emitting element 13 and the other electrode portion 12 'are connected by the bonding wire 14 ((e) in the figure). A plan view of this state is shown in FIG. Then, after bonding the semiconductor light emitting element 13 to all of the chip bonding portions arranged in the longitudinal direction on each crosspiece 72 and performing predetermined wire bonding, the upper surface of each crosspiece 72 is placed in the longitudinal direction by a transfer molding method, for example. Then, a sealing body is formed by covering with a transparent resin 15 in series (FIG. 7F). The shape of the sealing body can be freely formed depending on the shape of the mold used here. In the present invention, the sealing body has a curved surface or two or more planes. And the crosspiece 72 is cut | disconnected for every fixed length by dicing etc., and LED shown in FIG. 2 is obtained.

本発明で用いる半導体発光素子に特に限定はなく、従来公知のものが使用できる。例えば、GaN系やSiC系などの青色発光素子や、GaAs系、AlGaAs系、AlGaInP系、InP系などの赤色発光素子や緑色発光素子などが挙げられる。   There is no limitation in particular in the semiconductor light-emitting device used by this invention, A conventionally well-known thing can be used. For example, blue light emitting elements such as GaN and SiC, red light emitting elements such as GaAs, AlGaAs, AlGaInP, and InP, and green light emitting elements can be used.

一方、本発明で使用する透光性樹脂としては透光性であれば特に限定はなく、例えばエポキシ樹脂や不飽和ポリエステル樹脂、シリコーン樹脂、ユリア・メラミン樹脂などが挙げられる。この中でも透光性などの点からエポキシ樹脂がより好適に使用できる。エポキシ樹脂としては、一分子中に2個以上のエポキシ基を有するものでエポキシ樹脂成形材料として使用されるものであれば制限はなく、フェノールノボラック型エポキシ樹脂、オルクレゾールノボラック型エポキシ樹脂を代表するフェノール類とアルデヒド類のノボラック樹脂をエポキシ化したもの、ビスフェノールA、ビスフェノールF、ビスフェノールS、水添ビスフェノールAなどのジグリシジルエーテル、フタル酸、ダイマー酸などの多塩基酸とエピクロルヒドリンの反応により得られるジグリシジルエステル型エポキシ樹脂、ジアミノジフェニルメタン、イソシアヌル酸などのポリアミンとエピクロルヒドリンの反応により得られるグリシジルアミン型エポキシ樹脂、オレフィン結合を過酢酸などの過酸により、酸化して得られる綿状脂肪族エポキシ樹脂、および脂環族エポキシ樹脂などを挙げることができ、これらを単独であるいは2以上の混合物として使用することができる。これらのエポキシ樹脂は十分に精製されたもので、常温で液状であっても固形であってもよいが、液化時の外観ができる限り透明なものを使用するのが好ましい。   On the other hand, the translucent resin used in the present invention is not particularly limited as long as it is translucent, and examples thereof include an epoxy resin, an unsaturated polyester resin, a silicone resin, and a urea / melamine resin. Among these, an epoxy resin can be more suitably used from the viewpoint of translucency. The epoxy resin is not limited as long as it has two or more epoxy groups in one molecule and can be used as an epoxy resin molding material, and represents a phenol novolac type epoxy resin and an orcresol novolac type epoxy resin. It is obtained by epoxidizing phenol and aldehyde novolak resins, diglycidyl ethers such as bisphenol A, bisphenol F, bisphenol S, hydrogenated bisphenol A, etc., and reaction with epichlorohydrin such as phthalic acid and dimer acid. Diglycidyl ester type epoxy resin, diaminodiphenylmethane, isocyanuric acid and other polyamines obtained by the reaction of epichlorohydrin and glycidylamine type epoxy resin, obtained by oxidizing the olefin bond with peracid such as peracetic acid. That flocculent aliphatic epoxy resins, and alicyclic epoxy resins and the like can be mentioned, and these can be used alone or as a mixture of two or more. These epoxy resins are sufficiently purified and may be liquid or solid at room temperature, but it is preferable to use a resin that is as transparent as possible when it is liquefied.

なお、蛍光物質を透光性樹脂の中に含有させてもよい。蛍光物質を含有させた透光性樹脂は半透明となる。透光性樹脂に含有させる蛍光物質としては従来公知のものが使用でき、半導体発光素子の種類および得たい発光色などから適宜決定すればよい。   Note that a fluorescent material may be included in the light-transmitting resin. The translucent resin containing the fluorescent material becomes translucent. As the fluorescent substance to be contained in the light-transmitting resin, conventionally known fluorescent substances can be used, and may be appropriately determined from the type of the semiconductor light-emitting element and the desired emission color.

本発明の液晶表示装置の一例を示す概略垂直断面図である。It is a general | schematic vertical sectional view which shows an example of the liquid crystal display device of this invention. 本発明のバックライト装置で使用するLEDの一例を示す斜視図である。It is a perspective view which shows an example of LED used with the backlight apparatus of this invention. 図1のLEDを用いた場合の導光板における暗領域Bを示す図である。It is a figure which shows the dark area B in a light-guide plate at the time of using LED of FIG. 本発明のバックライト装置で使用するLEDの他の例を示す斜視図である。It is a perspective view which shows the other example of LED used with the backlight apparatus of this invention. 本発明の液晶表示装置の他の例を示す概略垂直断面図である。It is a general | schematic vertical sectional view which shows the other example of the liquid crystal display device of this invention. 本発明のバックライト装置で使用する、反射部材を備えたLEDの例を示す斜視図である。It is a perspective view which shows the example of LED provided with the reflection member used with the backlight apparatus of this invention. 図2のLEDの作製工程例を示す図である。It is a figure which shows the example of a manufacturing process of LED of FIG. 図7の作製工程における半導体発光素子の実装後の基板平面図である。FIG. 8 is a plan view of the substrate after the semiconductor light emitting element is mounted in the manufacturing process of FIG. 7. 従来使用していたLEDの一例を示す斜視図である。It is a perspective view which shows an example of LED used conventionally. 図9のLEDを用いた場合の導光板における暗領域Bを示す図である。It is a figure which shows the dark area B in a light-guide plate at the time of using LED of FIG. LEDの取付個数を減らした場合の、導光板における暗領域Bを示す図である。It is a figure which shows the dark area B in a light-guide plate at the time of reducing the attachment number of LED.

符号の説明Explanation of symbols

1 LED(半導体発光装置)
2 導光板
3,3’ 反射シート
4 拡散シート
5 液晶パネル
10 反射部材
15,16,17,18 透光性樹脂
21 光入射面
22 光出射面
1〜S9 光出射面
1 LED (semiconductor light-emitting device)
2 Light guide plate 3, 3 ′ Reflective sheet 4 Diffusion sheet 5 Liquid crystal panel 10 Reflective member 15, 16, 17, 18 Translucent resin 21 Light incident surface 22 Light emitting surface S 1 to S 9 Light emitting surface

Claims (5)

光出射面と光入射面とを有する導光板と、前記光入射面に対向して列状に複数配置された光源とを備え、
前記光源として、半導体発光素子が透光性樹脂で封止され、透光性樹脂の光出射面が曲面又は2以上の平面である半導体発光装置を用いたことを特徴とするバックライト装置。
A light guide plate having a light emitting surface and a light incident surface, and a plurality of light sources arranged in a row facing the light incident surface,
A backlight device comprising a semiconductor light emitting device in which a semiconductor light emitting element is sealed with a light transmitting resin and a light emitting surface of the light transmitting resin is a curved surface or two or more flat surfaces.
前記透光性樹脂が、垂直断面が台形状の6面体形状をしてなり、その光出射面が底面を除く5面である請求項1記載のバックライト装置。   2. The backlight device according to claim 1, wherein the translucent resin has a hexahedral shape with a trapezoidal vertical cross section, and the light emission surface has five surfaces excluding the bottom surface. 前記導光板の光出射面と反対側の面に反射シートが設けられ、この反射シートの光源側の側部が延出して、透光性樹脂の、導光板の光入射面に垂直な面を覆っている請求項1又は2記載のバックライト装置。   A reflection sheet is provided on the surface opposite to the light exit surface of the light guide plate, and a side portion on the light source side of the reflection sheet extends so that a surface perpendicular to the light incident surface of the light guide plate extends. The backlight device according to claim 1, wherein the backlight device covers the backlight device. 前記半導体発光装置が、前記半導体発光素子から出射した光を、導光板の光入射面の方向に反射させる反射部材をさらに備えた請求項1又は2記載のバックライト装置。   The backlight device according to claim 1, wherein the semiconductor light emitting device further includes a reflecting member that reflects light emitted from the semiconductor light emitting element toward a light incident surface of the light guide plate. 液晶パネルと、この液晶パネルの背面側に配置されたバックライト装置とを備え、バックライト装置として請求項1〜4のいずれかに記載のものを使用したことを特徴とする液晶表示装置。   A liquid crystal display device comprising: a liquid crystal panel; and a backlight device disposed on the back side of the liquid crystal panel, wherein the backlight device according to any one of claims 1 to 4 is used.
JP2004310535A 2004-10-26 2004-10-26 Backlight apparatus and liquid crystal display device Pending JP2006128163A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009005035A1 (en) 2007-06-29 2009-01-08 Mitsubishi Chemical Corporation Phosphor, method for producing phosphor, phosphor-containing composition, and light-emitting device
WO2009034943A1 (en) * 2007-09-10 2009-03-19 Sharp Kabushiki Kaisha Backlight
JP2012507846A (en) * 2008-11-05 2012-03-29 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー LED with molded bidirectional optical components

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009005035A1 (en) 2007-06-29 2009-01-08 Mitsubishi Chemical Corporation Phosphor, method for producing phosphor, phosphor-containing composition, and light-emitting device
WO2009034943A1 (en) * 2007-09-10 2009-03-19 Sharp Kabushiki Kaisha Backlight
US8047697B2 (en) 2007-09-10 2011-11-01 Sharp Kabushiki Kaisha Backlight
JP2012507846A (en) * 2008-11-05 2012-03-29 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー LED with molded bidirectional optical components
TWI507635B (en) * 2008-11-05 2015-11-11 Philips Lumileds Lighting Co Led with molded bi-directional optics

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