JP2006128146A - Device and column for test piece inspection - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device and a column for test piece inspection. <P>SOLUTION: The device can make it possible to have access to a large amount of additional information of a test piece compared with a single flat face test piece image by providing one or more test piece images formed by different visual angles. By inclining the beams between two images and by moving the test piece to a new position, the visual angle (incident angle) is changed. Thereby, displacement of beams due to inclination of the beams are compensated. Therefore, the beams basically scan a second image while displaying and recording for the same region in which a first image is scanned while displaying and recording. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an apparatus and a column for sample inspection. In particular, the present invention relates to an apparatus and column using a charged particle beam.

  The resolution of conventional optical microscopy is limited by the wavelength of visible light. Furthermore, at the highest resolution, the depth of focus with conventional optical microscopy is very shallow. Because of these two limitations, charged particle devices for sample inspection have become popular. Compared with photoaccelerated charged particles, for example, electrons exhibit a shorter wavelength, so that the resolving power can be increased. Thus, charged particle beams (especially electron beams) are used in various methods such as biology, medicine, material science and lithography. Examples include diagnosing human, animal and plant diseases, visualizing structures such as cell components and DNA, determining the structure of synthetic materials, thin films and ceramics, or inspecting masks and wafers used in semiconductor technology. Etc. are included.

  Furthermore, the charged particle device is very suitable for inspection of the microstructure of a solid surface. In particular, the SEM is an instrument suitable for examining surface microstructures, because it provides high spatial resolution and depth of focus for the same image, and requires minimal sample preparation. This is because. Modern instruments have an identification function of less than 1 nm while maintaining a rapid focus of tens of microns in the vertical direction. It is therefore well suited for periodic inspection of complex surface details of large scale integrated circuits. Charged particle devices may be used, for example, in the semiconductor industry to monitor wafer processing quality. Thereby, the device is actually placed in the production environment so that wafer processing problems are recognized as soon as possible.

  However, conventional charged particle devices cannot provide accurate critical dimensions, accurate heights, and accurate edge width measurements without the need for extensive human intervention. For example, to measure the height difference between two image points, typically two images are recorded with a predetermined tilt of the sample between exposures. However, mechanically tilting the sample is associated with a number of disadvantages. Due to mechanical imperfections, lateral movement of the sample inevitably occurs, which often leads to errors between the elements of a stereo image pair. This necessitates additional alignment and inevitably slows the process. Furthermore, if a large sample (eg, a 12 inch semiconductor wafer) is tilted, a very robust and expensive machine configuration will be required to ensure proper resistance of the stage against vibration. .

  In order to overcome the problem of connecting the mechanical tilt of the sample, to obtain the same result, it has been proposed to tilt the electron beam to the electron optical column by electrical means, for example BC Brenton et al. " A DYNAMIC REAL TIME 3-DMEASUREMENT TECHNIQUE FOR IC INSPECTION ", Microelectronic Engineering 5 (1986) 541-545, North Holland and JTL Thong et al." In Situ Topography Measurement in the SEM ", SCANNING Vol. 14, 65 -72 ( 1992), FAMS, Inc. and the like. However, the resolution in the height direction of the proposed system is only about 75 to 100 nm, which is not sufficient for the requirements of the semiconductor industry.

  Because of these problems, critical dimension measurements and sidewall profiling are often performed with an atomic microscope. However, using an atomic microscope adds considerable cost and requires additional experimental setup that is very slow. Accordingly, there is a need for a method of sample inspection that is faster and more automatic and allows accurate critical dimensions, accurate heights or accurate edge width measurements.

  The present invention provides an apparatus and column for sample inspection using a charged particle beam. Providing one or more sample images made at different viewing angles allows access to a large amount of additional information about the sample as compared to a single planar sample image. By tilting the beam between the two images and moving the sample to a new position, the viewing angle (incident angle) is changed, thereby compensating for beam displacement due to beam tilt. Thus, the beam basically scans the same area as it was scanned while displaying / recording the first image while displaying / recording the second image.

  On the other hand, by providing an oblique angle of incidence and, on the other hand, providing corresponding sample movement, it is fast and reliable without the need for additional alignment and the need for excessive image processing. A three-dimensional image of the sample can be created in a sophisticated manner. Therefore, it is possible to access additional information included in the stereoscopic image and extremely valuable in many cases without increasing the cost.

  According to a further aspect of the invention, a column is provided for directing a beam of charged particles onto the surface of the sample at a predetermined angle of incidence. The predetermined incident angle is realized by a combination of an operation of deflecting the beam away from the optical axis of the objective lens and an operation of focusing the beam on the sample. The deflection is performed by at least two steps that are mutually adjusted to minimize the chromatic aberration of the sample surface.

  The inventors have found that the chromatic aberration due to the first step of deflection can be significantly compensated by the second step of deflection if the two deflections are adjusted correctly. The combined operation of two-step beam deflection and focus concentration can lead to a resolution of 2-3 nanometers, which is comparable to the resolution that can be achieved in the absence of incident angle tilt. The present invention has an advantage that the angle of incidence on the sample can be increased without lowering the resolution caused by large chromatic aberration.

  According to a further aspect, accurate measurement of important distances is enabled on the sample surface, in particular on the semiconductor wafer surface. Information is obtained by a very fast and reliable method using a tilted beam of charged particles.

  According to the present invention, an apparatus and column for sample inspection are provided.

  First, it should be understood by one skilled in the art that the present invention can be used with any charged particle device. However, for simplicity, the present invention will be described with respect to implementation with a scanning electron microscope (SEM). A preferred embodiment according to the present invention is shown schematically in FIG. The basic components of the apparatus are an electron source 2, a lens system (condensing lens 5 and objective lens 10), scanning coils 12 </ b> A and 12 </ b> B, a beam shift coil 7, and a detection unit 16. In operation, an electron beam 4 is emitted from the electron source 2. The electron source may be, for example, a tungsten-hairpin gun, a lanthanum-hexaboride gun, or a field-emission gun. The electrons are accelerated by the acceleration voltage supplied to the electron source 2. Usually, the beam diameter directly produced by the electron source is too large to produce a sharp image at high magnification, so the electron beam 4 is guided to the condenser lens 5 and the beam is reduced toward the sample 8. The electron beam 4 to which the electron beam 4 is directed then enters the field of the deflector 7A where it deflects away from the path along the optical axis of the objective lens 10. A deflector 7A follows the scanning coil 12, which is used to move the electron beam 4 over the surface of the sample 8 with a raster, such as a television. After the scanning coil 12, the electron beam 4 enters an objective lens 10 that focuses the electron beam 4 onto the sample 8. The objective lens 10 not only focuses the electron beam 4 but also rotates the electron beam 4. However, this effect is not shown, because it is difficult to represent in a two-dimensional drawing, and those skilled in the art are familiar with this additional effect.

  By combining the deflector 7A and the objective lens 10, the electron beam 4 strikes the sample at a predetermined incident angle (preferably 10 ° to 20 °). When the electrons hit the surface of the sample 8, various by-products such as electrons having different energies, X-rays, photoelectrons, heat, backscattered electrons, and the like are generated. Many of these by-products and backscattered charged particles are used to create an image of the sample and collect additional data from the sample. A by-product of major importance for sample inspection or imaging is secondary electrons that leak from the sample 8 at various angles with relatively low energy (3-50 eV). Secondary backscattered electrons reach the detector 16 and are measured. An image of the surface of the sample 8 is formed by scanning the sample with an electron beam and displaying / recording the output of the detection unit 16.

  The sample 8 is supported on a stage 11 (sample stage), which is movable in all horizontal directions to allow the electron beam 4 to reach a target area on the sample to be inspected. . When the sample 8 is at a tilted incident angle, the electron beam is moved from the optical axis without hitting the sample along the optical axis. Thus, the stage 11 performs a motion corresponding to the sample 8, so that the electron beam strikes the same region on the sample that would have been hit if the electron beam was not deflected by the beam shift coil 7A. For example, to create a pair of stereoscopic images, if the deflection of the electron beam 4, i.e., the angle of incidence, is changed, the stage 11 is again moved to a new position so that beam displacement due to tilting the beam is compensated. The sample 8 is moved. Therefore, an error appearance between two images can be basically prevented.

  On the other hand, by providing a tilted incident angle and corresponding motion of the other sample, a stereoscopic image of the sample can be created in a fast and reliable manner without the need for additional alignment. Therefore, it is possible to access additional information that exists in a stereoscopic image and is very useful in many cases without increasing the cost. In general, both images of a stereo pair are created using a tilted incident angle. However, depending on the application, one of the stereoscopic images may be created by using a plan view of the sample.

  The specific example shown in FIG. 1 uses a pre-lens deflector 7A to deflect the electron beam 4. Through the objective lens 10 causing chromatic aberration, the deflection of the electron beam 4 leads to the off-axis path of the beam.

  FIG. 2 shows a circuit diagram of an apparatus for reducing chromatic aberration according to a further embodiment of the invention. This specific example is the same as FIG. 1 except for the following. The pre-lens deflector 7A was replaced with an in-lens deflector 7B disposed in the objective lens 10. When the deflector 7B is placed in the field of the objective lens 10, the chromatic aberration is considerably reduced. This reduction can reach 50% or more when the deflector 7B is placed inwardly of the objective lens 10 or partially under the objective lens 10.

  To further improve system performance, the embodiment shown in FIG. 2 has a reference target 40 that is integrated with the stage 11. The reference target 40 is used to determine the exact incident angle of the electron beam 4 impinging on the reference target 40. For example, the reference target may have a line relay structure or a trench indicating a vertical wall.

  By moving the stage 11 so that the reference target 40 is within the scanning range of the electron beam 4, the incident angle using the image of the reference target 40 is such that the electron beam 4 strikes the reference target 40 at a predetermined incident angle. , And parameter settings (eg, deflector 7B, objective lens 10, beam energy, etc.) can be found. Once this parameter setting is found, it can later be used for accurate measurements on the actual sample 8.

  In the specific example shown in FIG. 2, the reference target 40 is integrated with the stage 11. However, a reference target 40 may also be provided on a separate support as well, and this can be rotated, for example, to bring the reference target 40 within the scanning range of the electron beam 4. Also good. Furthermore, a heating system (not shown) can be provided for the reference target 40 so that the contaminants of the reference target 40 present on the target surface are volatilized by heating. By performing the reference target cleaning by heating each time, the reference target can be guaranteed for a long time. Therefore, it becomes possible to reduce the inoperable time of the entire system.

  For the purpose of further reducing chromatic aberration, FIG. 3 shows a circuit diagram of an apparatus according to a further embodiment of the invention. This specific example is similar to that of FIGS. 1 and 2 except for the following points. Instead of using the pre-lens deflector 7A or the in-lens deflector 7B, the specific example shown in FIG. 3 uses a combination of the pre-lens deflector 7A and the in-lens deflector 7B. Chromatic aberration due to the first deflector (pre-lens deflector 7A in this example) is caused by the second deflector (in-lens deflector 7B in this example) if the deflection due to these coils is correctly adjusted. It has been found by the present inventors that a considerable degree of compensation is possible. In this embodiment, a prelens deflector 7A and an in-lens deflector 7B are used. However, similar results can be achieved using two prelens deflectors or two in-lens deflectors.

  The exact adjustment of the two deflections depends on a number of parameters, such as the selected angle of incidence, beam energy, objective lens current, etc. However, the practice of the present invention does not depend on accurate knowledge of these parameters and their effects of chromatic aberration due to beam polarization. The direction of the deflection and deflection angles of the pre-lens and in-lens deflectors that gives a minimum aberration for a preselected angle of incidence is either an image, ie an image of the sample 8 or an image of the reference target 40. May be extracted from By combining the operation of pre-lens and in-lens deflectors, a resolution of 2-3 nanometers can be obtained, which is comparable to the resolution that can be achieved without a tilted incident angle. The present invention has an advantage in that even if the angle of incidence on the sample is increased, the resolution is not reduced due to the increase in chromatic aberration.

  To further improve system performance, the embodiment shown in FIG. 3 has an objective lens 10, which is a combination of a magnetic lens 10A and an electrostatic lens 10B. Therefore, the objective lens 10 is a composite magnetic electrostatic lens. Preferably, the electrostatic portion of the composite magnetic electrostatic lens 10 is an electrostatic suppression lens 10B. By using such a composite magnetic electrostatic lens 10, an excellent resolution can be generated with low acceleration energy (such as several hundred electron volts in the case of SEM). Such low acceleration energy is particularly desirable in the modern semiconductor industry to prevent charging or to prevent damage to radiation sensitive samples.

  4 and 5 show enlarged views of the composite magnetic electrostatic lens 10 and the sample 8 shown in FIG. In order to shorten the focal length, the magnetic flux generated by the current flowing through the excitation coil is conducted to the pole piece and concentrated in a small area along the optical axis of the magnetic lens. The magnetic field is rotationally symmetric about the optical axis and reaches a maximum at the interpole gap between the upper and lower sides of the pole piece. Further, the beam shift coil 7B is placed in the magnetic field of the objective lens 10A so that an overlap occurs between the magnetic fields.

  In addition to the magnetic lens 10A, the specific examples shown in FIGS. 3 to 5 include an electrostatic suppression lens in the vicinity of the magnetic lens 10A. The static electricity suppressing lens 10B has two electrodes held at different potentials. In the illustrated example, one of the two electrodes is formed by a cylindrical beam tube 14 disposed in the magnetic lens 10A along the optical axis. The second electrode of the static electricity suppressing lens 10B is a metal cup provided under the magnetic lens 10A. During operation of the system, the first electrode is typically held at a high positive potential (eg, 8 kilovolts) and the second electrode is held at a lower positive potential (eg, 3 kilovolts), thereby allowing electrons to As the energy goes from one energy to a lower second energy, it is correspondingly decelerated in the electrostatic field.

  In the example shown in FIGS. 4 and 5, the sample 8 is held at the ground potential. Therefore, another static suppression field exists between the metal cup and the sample 8. Due to the static suppression field between the metal cup and the specimen 8, the initial value of the deflection of the electron beam 4 generated by the beam shift coils 7A and 7B is increased, which increases the incident angle. Therefore, only a small deflection generated by the beam shift coils 7A and 7B is necessary to achieve the expected angle of incidence.

  There is no need to ground the sample surface. Further, the potential of the surface of the sample may be adjusted by applying a voltage to the sample. For example, a voltage may be applied to the wafer to obtain a voltage contrast image that is used to detect a short circuit. If the potential of the metal cup is higher than the potential of the sample surface, an electrostatic suppression field is generated.

  As can be seen from FIG. 5, when measured with respect to an axis perpendicular to the sample surface, the electron beam can strike the sample along the optical axis of the objective lens 10 when the sample 8 is in the field of view at an oblique incident angle. Absent. The electron beam 4 is moved from the optical axis by a distance d. Therefore, the stage 11 performs a motion corresponding to the sample 8 so that the electron beam strikes the same region as the region on the sample that would have been hit if the electron beam was not deflected by the beam shift coil 7A. When the electron beam 4 is deflected, that is, when the incident angle θ is changed (for example, to −θ), the stage 11 is again placed at a new position so that an error appearance between the two images can be basically prevented. Move 8.

  6A and 6B and the following description describe how accurate height measurements are performed by the present invention. 6A and 6B show pillars extending from a plane. 6A is an image of a pillar causing a beam tilt of θL = −3 °, while FIG. 6B is an image of a pillar causing a beam tilt of θR = + 3 ° with respect to an axis perpendicular to the plane.

In order to determine the height difference Δh between the top and bottom of the pillar, features must be arranged for each level. At the top of the pillar, the right end of the flake was used as the first feature. On the bottom surface, the edge of the particle was used as the second feature. Both images measure the distance in the X direction between two feature parts (P1 in FIG. 6A and P2 in FIG. 6B). The difference P between the distances P1 and P2 (P = P1-P2, where P is called parallax) is then used to calculate the height difference Δh between the top and bottom surfaces of the pillar. The height difference Δh is given by the following equation: Δh = P * ((sinθR * sinθL) / (sinθR-sinθL))
For small angle approximations (θR, θL ≤ 5 °), the height difference is given by Δh = P / (2 * sin ((θR-θL) / 2)).
In the example shown in FIGS. 6A and 6B, the distance P1 corresponds to 0.546 μm, while the distance P2 corresponds to 0.433 μm. Therefore, the height difference Δh between the top and bottom surfaces of the pillar is 1.079 μm in this example.

  According to the present invention, no extra effort is required to obtain additional height information from the sample. However, this additional information is of great value, especially for samples with a complex microstructure. In this example, the pillar height was determined. However, it is clear that the same technique can be used to determine the depth of the trench or hole. In the case of semiconductor wafers, the exact depth of the trench, such as the depth of the insulating trench and the precise depth of the contact hole, is very useful information for controlling the quality of the manufacturing process.

  Once the trench or hole depth or line height is known, this information can be used to determine further interesting functions. For example, by knowing the depth of the contact hole, another embodiment of the present invention can be used to determine the true width of the contact hole at its bottom. 7A and 7B show contact holes extending downward from the plane. 7A is an image of a contact hole that produces a beam tilt of θL = −3 °, while FIG. 7B is an image of a contact hole that produces a beam tilt of θR = + 3 ° with respect to an axis perpendicular to the plane. .

In FIG. 7A (left figure), the left top edge T1, the right top edge T2, and the right bottom edge BL of the contact hole can be seen. In FIG. 7B (right figure), the left top edge T1 and the right top edge T2 can be seen. Further, the left bottom edge BR of the contact hole can be seen. By measuring the visible distances T1BL and T1T2 as measured in FIG. 7A, the left figure, ie the distance T2BR measured in FIG. 7B, and the right figure, ie the true width Wb of the contact hole at the bottom, Can be calculated,
Wb = T1BL / cosθL + T2BR / cosθR + h (tanθL + tanθR)-Wt
Here, h is the depth of the contact hole, and Wt is the width of the contact hole at the top. In this embodiment, Wt is given by T1T2 / cosθL. In the example shown in FIGS. 7A and 7B, the distance T1BL / cos θL corresponds to 0.29 μm, the distance T2BR / cos θR corresponds to 0.334 μm, and the distance T1T2 / cos θL corresponds to 0.4005 μm. Further, the depth h of the contact hole was measured to be 1.0 μm. Therefore, the true width Wb of the contact hole at the bottom is 0.324 μm in this example.

  The method has the advantage that the true width W of the contact hole at its bottom can be determined even for high aspect ratio (deep and narrow) contact holes. This is in contrast to other methods such as atomic force microscopy which are very difficult.

In addition to determining the true width W of the contact hole at the bottom, further embodiments of the present invention can be used to determine the width of the sidewall that is visible in FIG. 7A or 7B. For example, the width of the left sidewall of the contact hole can be determined from FIG. 7B. In this situation, the width of the sidewall means the lateral distance in the horizontal wafer surface direction between the top of the sidewall and the bottom of the sidewall. As measured in FIG. 7B, the true width WL of the left sidewall of the contact hole can be calculated by measuring the visible distance T2BR,
WL = Wt-T2BR / cosθR-htanθR
T2BR is the measured visible distance between the bottom edge of the sidewall and the top edge on the opposite side of the trench or hole, h is the depth of the trench or hole, Wt is the width of the trench or the trench or hole. A hole on the upper surface, θR is the viewing angle of the image of FIG. 7B.

Similarly, by measuring the visible distance T1BL as measured in FIG. 7A, the true width WR of the left sidewall of the contact hole can be calculated,
WR = Wt-T1BL / cosθL-htanθL
T1BL is the visible distance measured between the bottom edge of the sidewall and the top edge on the opposite side of the trench or hole, h is the depth of the trench or hole, Wt is the trench or hole at the top of the trench or hole Is the viewing angle of the image of FIG. 7A.

  According to a further embodiment of the invention, knowing the height of the line, a pair of stereoscopic images of this line can be used to determine the true width of the line at its bottom. 8A (left figure) and FIG. 8B (right figure) show lines extending upward from the plane. FIG. 8A is an image of a line causing a beam tilt of θL = −3 ° with respect to an axis perpendicular to the plane, while FIG. 8B is a beam tilt of θR = + 3 ° with respect to an axis perpendicular to the plane. This is an image of a line that causes

FIG. 8A shows a left bottom edge X1, a left top edge X2, and a line right top edge X3. Also shown in FIG. 8B is a left top edge Y3 and a right top edge Y2. Furthermore, the right bottom edge Y1 of the line is known. By measuring the visible distances X1X2 and X2X3 as measured in FIG. 8A and by measuring the visible distances Y1Y2 and Y2Y3 as measured in FIG. 8B, the true width Wb of the line at its bottom is calculated. Can
Wb = (X1X2 + X2X3) / cosθL + (Y1Y2 + Y2Y3) / cosθR-h (tanθL + tanθR)-Wt
Or
(X1X2 + X2X3 = X1X3, Y1Y2 + Y2Y3 = Y1Y3)
Or
Wb = X1X3 / cosθL + Y1Y3 / cosθR-h (tanθL + tanθR)-Wt
Here, h is the line height, and Wt is the feature width on the feature top surface. For example, Wt is given by Y2Y3 / cosθR. In the example shown in FIGS. 8A and 8B, the distance (X1X2 + X2X3) / cos θL corresponds to 0.274 μm, the distance (Y1Y2 + Y2Y3) / cos θR corresponds to 0.312 μm, and the distance Y2Y3 / cos θR is It corresponds to 0.232 μm. Furthermore, the line depth h was measured to be 0.8 μm. Therefore, the true width Wb of the line at the bottom is 0.27 μm in this example.

Instead of the formula presented above, for example, an equivalent formula can be used,
Wb = X1X2 / cosθL + (Y1Y2 + Y2Y3) / cosθR-h (tanθL + tanθR)
Or
Wb = (X1X2 + X2X3) / cosθL + Y1Y2 / cosθR-h (tanθL + tanθR)
Or
Wb = X1X2 / cosθL + Y1Y2 / cosθR-h (tanθL + tanθR) + Wt.

  This method is advantageous in that the true width W of the line at the bottom can be determined even for a high aspect ratio (high and narrow) line.

  This is in contrast to other methods such as atomic force microscopy which are very difficult.

In addition to determining the true width W of the contact hole at the bottom, further embodiments of the present invention can be used to determine the width of the sidewall that is visible in FIG. 8A or 8B. For example, from FIG. 8B, the width of the right sidewall of the line can be determined. In this situation, the width of the side wall means the horizontal object side distance between the top of the side wall and the bottom of the side wall. By measuring the visible distance Y1Y2 as measured in FIG. 8B, the true width WR of the right side wall of the line can be calculated,
WR = Y1Y2 / cosθR-htanθR
Where Y1Y2 is the visible distance measured between the bottom and top edges of the feature sidewall, h is the feature height, and θR is the viewing angle of the image in FIG. 8B.

Similarly, the true width WL of the left sidewall of the line can be calculated by measuring the visible distance X1X2 as measured in FIG. 8A,
WL = X1X2 / cosθL-htanθL
X1X2 is the visible distance measured between the bottom and top edges of the feature sidewall, h is the feature height, and θL is the viewing angle of the image in FIG. 8A.

  9A and 9B show plan and tilt views of the trenches present on the surface of the wafer. As can be seen from FIG. 9B, this tilt view allows the true character of the trench sidewalls to be understood and defined. In this tilt view, the side walls will be very well understood with respect to a number of details not visible in FIG. 9A (plan view). Thus, the sidewall profile of the left sidewall of the trench can be collected from FIG. 9B. Furthermore, if the same edge portion is seen in both images, it will be readily understood that the edges of the tilt view are captured only for the same equivalent of twice as many pixels in the plan view. This clearly improves the accuracy of the edge width measurement.

  10A and 10B show plan and tilt views of the lines present on the surface of the wafer.

  As can be seen from this slope view (FIG. 10B), this slope view makes it possible to understand and define the true character of the side walls of the line. In the tilt view, the sidewall can be defined as T-top and its profile can be determined. At the top (FIG. 10A), T-top is not detected.

  While the invention has been described in terms of various exemplary embodiments, various embodiments and modifications are possible to those skilled in the art without departing from the scope and spirit of the invention as defined in the claims. It will be understood. For example, the angle, height and width dimensions presented with respect to FIGS. 6-8 are merely exemplary and it will be apparent that other angles, heights and width dimensions may be used. Similarly, although objective lens configurations have been provided, examples of objective lenses and other configurations may be used.

FIG. 1 is a circuit diagram of a charged particle device according to a first specific example of the present invention. FIG. 2 is a circuit diagram of a charged particle device according to a second specific example of the present invention. FIG. 3 is a circuit diagram of a charged particle device according to a third specific example of the present invention. FIG. 4 is an enlarged view showing the objective lens of the specific example of FIG. FIG. 5 is an enlarged view of FIG. 6A and 6B show a pillar, which extends from a plane and tries to determine its height. 7A and 7B show a contact hole (contact hole) that extends downward from the plane and tries to determine the width of its bottom. 8A and 8B show a line that extends upward from the plane and is trying to determine the width of its bottom. 9A and 9B show plan and tilt views of the trenches present on the surface of the wafer. 10A and 10B show plan and tilt views of lines present on the surface of the wafer.

Explanation of symbols

2 ... an electron source, 5 ... a condenser lens 57 ... a beam shift coil, 10 ... an objective lens, 12A, 12B ... a scanning coil, 16 ... a detector 16.

Claims (12)

An apparatus for inspecting a sample,
a) a particle source for supplying a beam of charged particles;
b) an objective lens that focuses the beam of charged particles onto the sample;
c) a detector for measuring at least one of by-products derived from the sample and backscattered particles;
d) at least one deflector for deflecting the beam away from the optical axis of the objective lens, the deflector being tilted by the cooperation of the deflector and the objective lens and being applied to the sample at a predetermined incident angle;
e) a sample stage for carrying the sample to a position corresponding to the tilt of the beam;
and f) a scanning device that scans a beam of charged particles on the sample to create an image.   The apparatus of claim 1, wherein the deflector is disposed outside and in front of the objective lens field. The apparatus according to claim 1, wherein the deflector is disposed in a field of the objective lens.   The apparatus according to claim 1, comprising two deflectors tuned to each other such that the chromatic aberration of the sample surface is minimized.   The apparatus of claim 4, wherein a first deflector is disposed outside and in front of the objective lens field, and a second deflector is disposed in the objective lens field.   The apparatus according to claim 1, wherein the objective lens is a combination of a magnetic lens and an electrostatic lens.   The apparatus of claim 6, wherein an electrostatic suppression field is provided between the electrostatic lens and the sample.   8. An apparatus according to any one of the preceding claims, provided with a reference target for determining the correct angle of incidence. A column for sample inspection that guides a beam of charged particles to the surface of the sample at a predetermined angle of incidence,
a) a particle source for supplying a beam of charged particles;
b) an objective lens that focuses the beam of charged particles onto the sample;
c) at least two deflectors that deflect the beam away from the optical axis of the objective lens and are mutually adjusted to minimize chromatic aberration on the surface of the sample, by cooperation of the deflector and objective lens A column comprising a deflector with which the beam is tilted and applied to the sample at a predetermined angle of incidence.   The column according to claim 9, wherein a first deflector is arranged outside and in front of the objective lens field and a second deflector is arranged in the objective lens field.   The column according to claim 9 or 10, wherein the objective lens is a combination of a magnetic lens and an electrostatic lens. The column according to claim 11, wherein an electrostatic suppression field is provided between the electrostatic lens and the sample.