JP2006097069A - Vacuum film-forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum film-forming apparatus having a thermometry means for precisely estimating the heat transferred onto a substrate from a heated vapor-deposition material through radiation, in a state of rotating the substrate, arranged in a proper position in a vacuum chamber. <P>SOLUTION: This vacuum film-forming apparatus 100 comprises: the vacuum chamber; a substrate holder 4 placed in the vacuum chamber 1 so as to hold and rotate the substrate 3; an evaporation source 2 which is placed in the vacuum chamber 1 so as to face the substrate holder 4, and emits vapor-deposition particles toward the substrate 3 through heating a vapor-deposition material; and the thermometry means 10 for receiving and detecting heat rays radiated from the vapor-deposition material. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a vacuum film-forming apparatus, and more particularly to a vacuum film-forming apparatus in which temperature measuring means for calculating the temperature of a rotating substrate is arranged at an appropriate place in a vacuum chamber.

  As one form of the vacuum film forming apparatus, a crucible for setting a deposition material and a dome-shaped substrate holder for holding a plurality of substrates (glass substrate or resin substrate) in a vacuum chamber of the vacuum film forming apparatus have an appropriate interval. Vapor deposition, in which the vapor deposition material is evaporated by heating and melting the vapor deposition material based on electron beam heating or resistance heating, thereby forming a vapor deposition film made of vapor deposition particles emitted from the vapor deposition material. There are devices and ion plating devices.

  In such a vacuum film forming apparatus, it is important to appropriately control the temperature of the substrate in order to suppress an excessive temperature rise on the substrate due to the influence of the melting and heating of the vapor deposition material.

  For this reason, the amount of heat brought to the substrate is reliably estimated by the heat radiation of the vapor deposition material or the heat conduction of the high-temperature vapor-deposited film deposited on the substrate, and the heat radiation or heat conduction causes heat damage to the resin substrate, for example. Technology to prevent it has been developed.

  For example, in addition to a semiconductor substrate for depositing vapor deposition material on a fixed wafer holder plate, a dummy substrate for substrate temperature measurement is arranged and obtained by a thermocouple connected to the dummy substrate for substrate temperature measurement. There is a vacuum deposition apparatus that estimates the temperature of the semiconductor substrate based on the measured temperature (see, for example, Patent Document 1).

Further, as a technique for estimating the temperature of the substrate while rotating the substrate holder holding the substrate, there is also a vacuum coating apparatus in which a temperature sensor is disposed on the back surface of the dome-shaped holding means for rotating the substrate so as to be close to the substrate. Yes (see, for example, Patent Document 2).
Japanese Patent No. 3451694 JP 2000-336472 A

  However, the apparatus described in Patent Document 1 relates to a substrate temperature measurement technique on the premise that the wafer holder plate is fixed. The temperature of the substrate that is held by the substrate holder and rotates together with the substrate holder as it is. Even if it is applied to the measurement, the thermocouple connected to the dummy substrate is entangled and the rotation of the substrate is hindered.

  In addition, the temperature sensor on the back surface of the holding means described in Patent Document 2 has a problem that heat rays radiated from the vapor deposition material to the substrate are shielded by the holding means and an accurate amount of radiant heat cannot be estimated.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a temperature measuring means for accurately estimating the radiant heat transfer to the substrate based on the heating of the deposition material while the substrate is rotated. Is to provide a vacuum film forming apparatus arranged in a proper position in a vacuum chamber.

  In order to solve the above problems, a vacuum film forming apparatus according to the present invention includes a vacuum chamber, a substrate holder disposed in the vacuum chamber so as to hold and rotate the substrate, and the substrate holder facing the substrate holder. An evaporation source that is disposed in a vacuum chamber and emits vapor deposition particles toward the substrate by heating the vapor deposition material; and a temperature measurement unit that detects the heat rays by receiving heat rays radiated from the vapor deposition material; .

  Thus, the temperature measuring means is disposed at a proper position in the vacuum chamber so as to directly face the evaporation source, so that the heat rays radiated from the vapor deposition material are applied to the temperature measuring means, so that the heat rays are accurate. Is detected.

  Here, a hollow rotating body having a hollow region that holds and rotates the substrate holder is provided, and the substrate holder is an annular body having an opening, while the temperature measuring means passes through the hollow region to the opening. You may comprise so that it may insert in the said vacuum chamber. By appropriately diverting the hollow region of the hollow rotating body, it is preferable that the temperature measuring means is arranged at an appropriate place in the vacuum chamber.

  Alternatively, the temperature measuring unit may be inserted into the vacuum chamber between the periphery of the substrate holder and the wall of the vacuum chamber. Preferably, the temperature measuring means is disposed at a suitable position in the vacuum chamber between the periphery of the substrate holder and the wall of the vacuum chamber.

  Here, an example of the temperature measuring unit includes a linear temperature sensor and a concave cover member surrounding at least an end portion of the temperature sensor, and the end portion of the temperature sensor and the cover member are in contact with each other. It is.

  If it carries out like this, the vapor deposition particle discharge | released from vapor deposition material will adhere to the said cover member, As a result, it can eliminate that the front-end | tip of the said temperature sensor is contaminated with the said vapor deposition particle.

  Further, the vacuum film forming apparatus includes a control device that calculates the temperature of the substrate based on a signal output from the temperature measuring means.

  The temperature measurement means is, for example, a first temperature measurement that detects the heat ray by receiving a heat ray that is inserted into the vacuum chamber through the hollow region toward the opening and radiated from the vapor deposition material. Means, and a second temperature measurement that detects the heat ray by receiving a heat ray radiated from the vapor deposition material, inserted into the vacuum vessel between the periphery of the substrate holder and the wall of the vacuum vessel. And the temperature of the substrate may be calculated based on the signal output from the first temperature measuring means and the signal output from the second temperature measuring means. .

  An example of the substrate holder has an inclined surface inclined toward the evaporation source side from the center toward the periphery, and the tip of the first temperature measuring means is formed at the center. The tip of the second temperature measuring means may be positioned substantially on the same plane as the periphery parallel to the opening.

  With this configuration, the ambient temperature in the vacuum chamber at two locations, the center and the periphery of the substrate holder, can be obtained, and even if the temperatures of the plurality of substrates arranged on the inclined surface of the substrate holder are calculated appropriately It becomes possible.

  Here, when the film of the substrate obtained by depositing the vapor deposition particles has a laminated structure divided into a plurality of layers, the control device is configured to perform the film formation after the formation of the layers on the substrate. An interlayer stop time for stopping the release of vapor deposition particles to the substrate may be set based on the signal.

In this case, the interlayer stop time is appropriately set based on the signal, and as a result, the temperature of the substrate is reliably prevented from rising beyond the threshold temperature (TK ₀ ), which is preferable.

  The control device may compare the signal immediately after the start of the interlayer stop time with a preset value, and determine the validity of the interlayer stop time based on the comparison result.

  If the interlayer stop time is not appropriate, the control device calculates a time constant and a settling time corresponding to a change with time of the signal after the start of the interlayer stop time, and then calculates the time constant and the settling time. The interlayer stop time may be reset based on the time-varying profile of the signal obtained from (1).

In this way, by appropriately resetting the interlayer stop time based on the time-dependent change profile of the signal, even when a vapor deposition film having a laminated structure is formed on the substrate, the temperature of the substrate is lower than the threshold temperature. It becomes possible to keep (TK ₀ ).

  Further, the film has a first layer and a second layer formed continuously with different materials, and the control device is configured to perform the control after the film formation of the first layer on the substrate is completed. Prior to the passage of the interlayer stop time, the vapor deposition material for forming the second layer on the substrate may be controlled to be preheated based on the interlayer stop time.

  Thereby, it is possible to properly predict the preheating time of the vapor deposition material in the vacuum film forming apparatus, and as a result, even in the case of continuously forming a vapor deposition film composed of a plurality of layers of different materials on the substrate, The waste of the vapor deposition material of the vacuum film forming apparatus and the delay of the film forming tact are eliminated.

  According to the present invention, there is provided a vacuum film forming apparatus in which temperature measuring means for accurately estimating the radiant heat transfer to the substrate based on the heating of the vapor deposition material in a state where the substrate is rotated is disposed at an appropriate position in the vacuum chamber. can get.

  Embodiments for carrying out the invention will be described below with reference to the drawings.

  FIG. 1 is a cross-sectional view showing a configuration of a vacuum film forming apparatus according to an embodiment of the present invention.

  FIG. 2 is an enlarged cross-sectional view of the peripheral structure of the hollow rotating body that holds the substrate holder in the vacuum film forming apparatus shown in FIG.

  First, the configuration of the vacuum film forming apparatus will be outlined with reference to FIG. 1 and FIG.

  As shown in FIG. 1, the vacuum film forming apparatus 100 has a conductive vacuum chamber 1. A pair (two) of evaporation sources 2 for evaporating the vapor deposition material are disposed below the internal space 1 e of the vacuum chamber 1. A dome-shaped substrate holder 4 that rotates while holding a plurality of substrates 3 facing the evaporation source 2 is disposed above the internal space 1 e of the vacuum chamber 1.

  Each of the evaporation sources 2 is a crucible 2a formed with a concave deposition material reservoir for setting a deposition material (not shown), and the deposition material set in the deposition material reservoir of the crucible 2a is evaporated by electron energy. An electron gun 2b that emits a high-speed electron beam toward the material reservoir and an appropriate driving device (not shown) for controlling the coating of the vapor deposition particles emitted from the vapor deposition material on the substrate 3 And a shutter member 2c for opening and closing the opening.

  As will be described later, the shutter member 2c also serves as a means for controlling the amount of heat by heat radiation transmitted from the high-temperature vapor deposition material to the substrate 3.

  Note that the evaporation material may be simultaneously released from each of these evaporation sources 2 to the substrate 3 by opening and closing the shutter member 2c, and the shutter members 2c installed in each of the evaporation sources 2 can be opened and closed appropriately. The vapor deposition particles may be emitted toward the substrate 3 at every time interval. Furthermore, the same vapor deposition material may be set in each crucible 2a of these evaporation sources 2, or vapor deposition materials of different materials may be set.

  In short, depending on the configuration and operation of the evaporation source 2, a vapor deposition film having an appropriate laminated structure or alloy structure can be formed on the substrate 3.

  The substrate holder 4 is held by a hollow rotating body 6 (described later), and is configured to be driven and rotated together with the hollow rotating body 6 by a rotation driving device 27 (see FIG. 2; described later). By the rotation operation of the substrate 3, a vapor deposition film having a uniform thickness is formed on the substrate 3.

  Further, as shown in FIG. 2, the substrate holder 4 exposes a part of the substrate 3 to the evaporation source 2 so that the vapor deposition particles adhere to the substrate 3 with the plurality of substrates 3 held on the back surface. The dome-shaped conductive first plate plate 7 having the vapor deposition holes 5 to be formed, and the bolts 32 on the back side of the first plate plate 7 with a predetermined interval by an annular conductive spacer 31. And a conductive second plate plate 8 having the same shape as the first plate plate 7 and connected to the first plate plate 7.

  When the vacuum film forming apparatus 100 is used as, for example, an ion plating apparatus, a predetermined discharge gas is introduced into the internal space 1e of the vacuum chamber 1, and the first and second discharge gases are supplied from a power supply source (not shown). Predetermined electric power is supplied to the second plate plates 7 and 8, thereby causing a discharge phenomenon between the grounded vacuum chamber 1 and the first and second plate plates, and in the vicinity of the front surface of the first plate 7. In addition, a plasma region due to this discharge is appropriately formed.

  The first and second plate plates 7 and 8 are both annular bodies having openings 7a and 8a formed at the centers thereof, and an optical monitor 9 for monitoring the thickness of the deposited film formed on the substrate 3. (Described later) and first temperature measuring means 10 (described later) for estimating and monitoring the temperature of the substrate 3 pass through the hollow region of the hollow rotating body 6 toward the openings 7a and 8a. As a result, the optical monitor 9 and the tip of the first temperature measuring means 10 are arranged so as to directly face the evaporation source 2 (vapor deposition material).

  Further, as shown in FIG. 1, the second temperature measuring means 11 for estimating and monitoring the temperature of the substrate 3 includes the periphery of the substrate holder 4 (the edges of the first and second plate plates 7 and 8) and the vacuum chamber. Similarly, the tip of the second temperature measuring means 11 is arranged so as to directly face the evaporation source 2 (deposition material).

  The control device 12 receives the signals output from the first and second temperature measuring means 10 and 11, and based on these signals, calculates the amount of heat due to thermal radiation transmitted from the evaporation source 2 (deposition material) to the substrate 3. The output of the evaporation source 2 and the opening / closing of the shutter member 2c are controlled so as to control appropriately. In other words, if the heat radiation that exceeds the threshold temperature of the substrate 3 (explained later) is transmitted from the evaporation source 2 to the substrate 3, the control device 12 allows the vapor deposition material by the electron gun 2b. Vacuum film formation to suppress the heat supply amount of heat radiation transmitted from the evaporation source 2 (deposition material) to the substrate 3 by reducing the electron energy with respect to the surface and blocking the opening of the crucible 2a storing the evaporation material by the shutter member 2c. The apparatus 100 is controlled.

  Next, the hollow rotating body 6 and its peripheral structure will be described in detail with reference to FIG.

  As shown in FIG. 2, a rotatable conductive hollow rotator 6 is disposed on the back surface of the substrate holder 4 so as to hold the substrate holder 4. The hollow rotator 6 penetrates the opening 1b formed in the wall 1a of the vacuum chamber 1 in an airtight and rotatable manner, and extends from the internal space 1e to the outside (atmosphere) of the vacuum chamber 1. It is arranged like this. Thus, the hollow region surrounded by the side wall portion of the hollow rotating body 6 communicates with the internal space 1e of the vacuum chamber 1 below the axial direction. The upper part of the hollow rotating body 6 in the axial direction is closed by a lid (described later).

  Further, in the middle of the axial direction of the portion of the hollow rotator 6 from the wall 1a to the tip on the atmosphere side, a rotation driving device 27 is disposed so that the hollow rotator 6 can be rotationally driven.

  The rotation drive device 27 is a motor that generates a rotation drive force for the hollow rotator 6, for example, and a drive unit of the rotation drive device 27 and an annular pulley 22 installed on the outer peripheral surface of the hollow rotator 6. The rotational force of the rotational drive device 27 is transmitted to the hollow rotator 6 via the belt 21.

  The peripheral structure of the hollow rotator 6 is mainly hollow with a substantially cylindrical housing member 28 that covers the outer periphery of the hollow rotator 6 and a flange that contacts the upper ends of the hollow rotator 6 and the housing member 28 in the axial direction. A cylindrical inner lid 29 to be inserted into the hollow region of the rotating body 6 and a disc-like shape arranged so as to be in close contact with the flange portion of the inner lid 29 and to close the axially upper opening of the hollow rotating body 6. The outer cover 30 is constituted by two annular upper and lower bearings 25 and 26 which are fixed to the inner surface of the side wall of the housing member 28 and rotatably support the hollow rotating body 6.

  The lower end of the housing member 28 is fitted into the opening 1b of the wall 1a of the vacuum chamber 1, and is fixed to the wall 1a by a fixture (not shown). In addition, an annular groove (not shown) is formed on the surface of the outer lid 30 at the contact surface between the collar portion of the inner lid 29 and the outer lid 30, and an O-ring (not shown) is disposed here. Both are fixed by appropriate fixing means (not shown), and this contact portion is hermetically vacuum-sealed.

  An oil seal 23 is annularly arranged between the inner peripheral surface of the hollow rotator 6 and the outer peripheral surface of the cylindrical portion of the inner lid 29, and the outer peripheral surface of the hollow rotator 6 and the inner peripheral surface of the housing member 28 are arranged. An oil seal 24 is annularly arranged between the hollow rotator 6 and the cylindrical portion of the inner lid 29 and between the hollow rotator 6 and the housing member 28 in an airtight manner.

  Further, the optical monitor 9 and the first temperature measuring means 10 pass through the outer lid 30 in an airtight manner and extend in the axial direction of the hollow region, and the respective tips of the first and second plate plates 7 and 8 It arrange | positions so that it may be located in opening 7a, 8a. Thereby, these front-end | tips have faced the evaporation source 2 (vapor deposition material).

  The optical monitor 9 is provided as a standard in the existing vacuum film forming apparatus 100, and is an apparatus capable of setting about 60 monitor glass plates 9a. For example, the light monitor 9 irradiates light from a light projecting unit (not shown) to a deposited film formed on the monitor glass plate 9a, and receives reflected light reflected by the deposited film as a light receiving unit (not shown). Is a device capable of measuring the thickness of the deposited film formed on the glass plate for monitoring 9a based on the intensity of the reflected light.

  And the thickness of the vapor deposition film formed in the board | substrate 3 can be measured by converting the thickness of the vapor deposition film formed in the glass plate 9a for monitors by a suitable method.

  In addition, if the vapor deposition film formed on the substrate 3 has a laminated structure composed of a plurality of single layers, the monitor glass plate 9a on which the single layer is deposited at the same time each time a single layer is formed on the substrate 3 is newly formed. By replacing with a glass plate, it is possible to measure the total thickness of each single layer constituting the deposited film.

  Next, the configuration of the first temperature measuring means 10 will be described with reference to FIG. The configuration of the second temperature measuring unit 11 shown in FIG. 1 is the same as the configuration of the first temperature measuring unit 10, and thus the description of the configuration of the second temperature measuring unit 11 is omitted.

  FIG. 3 is a cross-sectional view showing the configuration of the tip portion of the first temperature measuring means.

  The first temperature measuring means 10 is mounted so as to extend in the axial direction of the hollow region of the hollow rotating body 6 and, as understood from FIG. 3, is a linear shape that detects heat rays radiated from the vapor deposition material. Thermocouple 10c (temperature sensor), a cylindrical stainless steel tube 10b for protection which covers the outer periphery of the thermocouple 10c and prevents its deformation, and an upper end portion is connected to the tip of the stainless steel tube 10b. A concave copper cover member 10a having a space for accommodating the thermocouple 10c so as to contact the tip of the thermocouple 10c extending downward and to cover at least the axial end of the thermocouple 10c. It is configured.

  Each of the outer peripheral surface of the stainless steel tube 10b and the inner surface of the cover member 10a is, for example, threaded, and the stainless steel tube 10b is screwed inward of the cover member 10a so that the stainless steel tube 10b is axially moved together with the stainless steel tube 10b. It can be reliably confirmed whether or not the tip of the thermocouple 10c moving in contact with the bottom surface (inner surface) of the cover member 10a.

  Moreover, both are processed in the taper shape so that the bottom face of the cover member 10a and the front-end | tip of the thermocouple 10c may be in surface contact, and, by this, the heat ray radiated | emitted from vapor deposition material hits the cover member 10a, vapor deposition material The heat radiation based on this heating is accurately transmitted to the thermocouple 10c through the copper cover member 10a having excellent heat transfer characteristics.

  Further, since the cover member 10a covers at least the tip of the thermocouple 10c, the vapor deposition particles released from the vapor deposition material of the evaporation source 2 adhere to the cover member 10a, and as a result, the thermocouple 10c is contaminated by the vapor deposition particles. Disappear. That is, the cover member 10a functions as an adhesion preventing member that prevents the deposition particles from adhering to the thermocouple 10, and the cover member 10a can keep the tip of the thermocouple 10c clean.

  According to such a vacuum film-forming apparatus 100, the evaporation source 2 (deposition material) can be used by properly utilizing the arrangement hollow region of the optical monitor 9 in the hollow rotating body 6 that rotates the substrate holder 4 on which the plurality of substrates 3 are arranged. The first temperature measuring means 10 can be arranged at an appropriate position in the internal space 1e of the vacuum chamber 1 so that the heat rays radiated from the vapor deposition material can be transferred by the first temperature measuring means 10. Therefore, the control device 12 can appropriately calculate the temperature of each of the substrates 3 based on the signal output from the first temperature measuring means 10.

  Further, in addition to the first temperature measuring means 10, the second temperature measuring means 11 is arranged at a suitable position in the internal space 1e of the vacuum chamber 1 so that the evaporation source 2 (deposition material) can be directly faced. The control device 12 can appropriately calculate each temperature of the substrate 3 based on the signal output from the first temperature measurement unit 10 and the signal output from the second temperature measurement unit 11.

  For example, the first plate plate 7 (substrate holder 4) is inclined downwardly from the center of the first plate plate 7 toward the periphery thereof, that is, toward the evaporation source 2 (for example, curved in a dome shape). The tip of the first temperature measurement means 10 is positioned substantially on the same plane as the opening 7a formed at the center of the first plate 7 (on the first horizontal plane). When the tip of the second temperature measuring means 11 is positioned on the same plane as the periphery of the first plate plate 7 (on the second horizontal plane) parallel to the opening 7a, the first and second temperatures are measured. From the signals output from the measuring means 10 and 11, two locations, the vicinity of the center and the vicinity of the first plate plate 7, which are substantially on the same horizontal plane as the tips of the first and second temperature measuring means 10 and 11, are shown. When the ambient temperature of the internal space 1e is obtained, it tilts downward Even at a temperature of the first plurality of substrate 3 disposed on the entire surface of the plate board 7 having an inclined surface becomes properly be computed.

  Further, a cover member 10a as an adhesion preventing member is disposed at the tip of the first and second temperature measuring means 10, 11, and thereby a thermocouple 10c by vapor deposition particles emitted from the evaporation source 2 (vapor deposition material). It is possible to prevent the adhesion contamination.

  Next, using the signal (hereinafter referred to as the thermocouple temperature) output from the first or second temperature measuring means 10 or 11 (hereinafter referred to as the thermocouple) shown in FIG. An example of the film forming operation of the vacuum film forming apparatus 100 controlled by the control device 12 when a deposited film having a laminated structure is formed will be described.

  Prior to the description of the film forming operation of the vacuum film forming apparatus 100, the result of the element test for obtaining the correlation between the temperature of the thermocouple and the temperature of the substrate 3 will be described. The result of the element test is stored in advance in a storage device (not shown) of the control device 12.

  FIG. 4 is a diagram showing an example of the result of the element test. The horizontal axis represents time, and the vertical axis represents the substrate temperature (FIG. 4 (a)) and the thermocouple temperature (FIG. 4 (b)). It is a figure drawn.

  FIG. 4 shows the time course of the thermocouple temperature curve measured by the thermocouple and the corresponding substrate temperature curve (a specific substrate).

Here, in the substrate temperature curve shown in FIG. 4A, a threshold temperature (TK ₀ ) specified in advance based on the shape and material of the substrate 3 is stored in the storage device of the control device 12.

The threshold temperature (TN ₀ ) of the thermocouple temperature curve (FIG. 4B) corresponding to the threshold temperature (TK ₀ ) of the substrate temperature curve (FIG. 4A) is also based on the element test. Are measured in advance and stored in the storage device of the control device 12. For this reason, the control device 12 can appropriately control the temperature of the substrate 3 so as not to rise above the threshold temperature (TK ₀ ) by sequentially monitoring the temperature of the thermocouple.

  Next, the meaning of the interlayer stop time used for the temperature control of the substrate 3 by the control device 12 will be described with reference to FIG.

  Here, the interlayer stop time refers to a time for stopping the release of the vapor deposition particles to the substrate 3 after the film formation of a predetermined single layer is completed for the vapor deposition film having a laminated structure divided into a plurality of single layers.

As shown in FIG. 4A, when the vapor deposition of a single layer constituting the vapor deposition film having a laminated structure is started on the substrate 3, the temperature of the substrate 3 is a critical initial temperature due to thermal radiation based on heating of the vapor deposition material. The temperature is raised from (TK _s ) to the threshold temperature (TK ₀ ). At the same time as the film formation on the single-layer substrate 3 is completed, the heat radiation transmitted from the vapor deposition material to the substrate 3 is blocked by, for example, the shutter member 2c, whereby the temperature of the substrate 3 is increased with time. Go down.

  Of course, by reducing the output of the evaporation source 2, the heat radiation brought from the vapor deposition material to the substrate 3 may be suppressed.

Similarly, as shown in FIG. 4B, the temperature of the thermocouple is raised from the critical initial temperature (TN _s ) to the threshold temperature (TN ₀ ) due to thermal radiation based on heating of the vapor deposition material. To do. At the same time as the film formation on the single-layer substrate 3 is completed, the heat radiation transmitted from the vapor deposition material to the substrate 3 is blocked by, for example, the shutter member 2c, so that the temperature of the thermocouple also increases with time. Go down.

As understood from FIG. 4, if the deposition of the next layer on the substrate 3 is started in a state where the substrate 3 is made higher than the above-mentioned limit initial temperature (TK _s ), the threshold temperature (TK ₀ ) is exceeded. The substrate 3 may be heated. For this reason, the control device 12 calculates in advance an appropriate initial temperature (αTK _s ) obtained by multiplying the above-mentioned limit initial temperature (TK _s ) by the safety factor α, and the appropriate amount of the substrate 3 from the time when the deposition of the single layer is completed. the initial temperature (αTK _s) time the temperature of the substrate 3 is lowered down to, on the basis of the suitable initial temperature of the thermocouple corresponding to (αTK _s) suitable initial temperature (αTN _s) and the temperature curve of thermocouple terms By doing so, the interlayer stop time βtin is set.

That is, the control device 12 appropriately sets the interlayer stop time βtin based on the temperature of the thermocouple, and then deposits on the substrate 3 for at least the interlayer stop time βtin every time a single layer is formed on the substrate 3. The vacuum film forming apparatus 100 is controlled so as to interrupt the film forming operation based on the particles (for example, the heat radiation transmission interruption by the shutter member 2c), whereby the temperature of the substrate 3 becomes the threshold temperature (TK ₀ ). The temperature is surely prevented from exceeding.

  Next, an example of setting change operation for each single layer of the interlayer stop time βtin will be described with reference to FIG. The interlayer stop time βtin changes from moment to moment depending on the number of single layers stacked on the substrate 3 and the ambient temperature of the substrate 3, and this interlayer stop time βtin every time a single layer is formed on the substrate 3. It is necessary to grasp correctly.

  FIG. 5 shows an interlayer in an nth single layer (hereinafter referred to as an nth order layer) and a next (n + 1) th single layer (hereinafter referred to as an (n + 1) th order layer) in a deposited film formed on a substrate. It is the flowchart which showed the setting change operation example of stop time.

When the formation of the n-th layer on the substrate 3 is completed (step S501), immediately after the start of the initial interlayer stop time βtin, the control device 12 sets the thermocouple temperature T and the thermocouple threshold temperature (TN _0). ) To determine whether or not the temperature T of the thermocouple is equal to or lower than the threshold temperature (TN ₀ ) of the thermocouple (step S502).

Here, when it is determined that the temperature T of the thermocouple is equal to or lower than the threshold temperature (TN ₀ ) of the thermocouple (YES in step S502), that is, the temperature of the substrate 3 is the threshold temperature (TK ₀ ). If it is determined that the initial interlayer stop time βtin is appropriate and the initial interlayer stop time βtin has elapsed from the end of the formation of the n-th layer (step S503). Then, the deposition of the (n + 1) next layer on the substrate 3 is executed (step S508).

On the other hand, when it is determined that the temperature T of the thermocouple exceeds the threshold temperature (TN ₀ ) of the thermocouple (No in step S502), that is, the temperature of the substrate 3 is the threshold temperature (TK). _If the initial interlayer stop time βtin is determined to be invalid, the control device 12 performs control so as to proceed to the next step for resetting the interlayer stop time.

First, based on the initial thermocouple temperature drop curve L of the thermocouple temperature curve corresponding to the time change of the thermocouple temperature T, the time constant corresponding to the time change and the settling time t ₀ (the thermocouple temperature drop curve is The time that becomes constant over time) is calculated by the control device 12 (step S504), whereby the entire time-dependent change profile of the thermocouple temperature curve is predicted promptly after the deposition of the n-th layer is completed. .

Subsequently, based on the time-dependent change profile of the thermocouple temperature curve thus obtained, the control device 12 reaches the appropriate initial temperature (αTN _s ) obtained by multiplying the limit initial temperature (TN _s ) of the thermocouple by the safety factor α. the time [beta] t _0, is reconfigured as a new interlayer stop time (step S505).

Thereafter, when the interlayer stop time βt ₀ has elapsed from the end of deposition of the n-th layer on the substrate 3 (step S506), the control device 12 determines the thermocouple temperature T and the appropriate initial temperature (αTN _s ) To determine whether the temperature T of the thermocouple is equal to or lower than the appropriate initial temperature (αTN _s ) of the thermocouple (step S507).

Here, when it is determined that the temperature T of the thermocouple after the lapse of the interlayer stop time βt ₀ is equal to or lower than the appropriate initial temperature (αTN _s ) of the thermocouple (YES in step S507), that is, the temperature of the substrate 3 is set. When it is determined that the newly set interlayer stop time βt ₀ is appropriate in the sufficiently lowered state, the control device 12 executes the deposition of the (n + 1) -th layer on the substrate 3. (Step S508).

On the other hand, when it is determined that the temperature T of the thermocouple after the lapse of the interlayer stop time βt ₀ exceeds the appropriate initial temperature (αTN _s ) of the thermocouple (No in step S507), that is, newly set If it is determined that the interlayer stop time βt ₀ is not valid, the control device 12 reviews the conditions of the initial thermocouple temperature drop curve L, for example, and performs the processing shown in steps S504 to S507. Re-execute.

In this way, even when the vapor deposition film having the laminated structure is formed on the substrate 3 by appropriately setting the interlayer stop times βtin and βt ₀ based on the temporal change profile of the temperature T of the thermocouple, It becomes possible to keep the temperature below its threshold temperature (TK ₀ ).

Further, the control device 12 compares the temperature T of the thermocouple with the threshold temperature (TN ₀ ) of the thermocouple immediately after completion of the formation of the single layer on the substrate 3 (immediately after the start of the interlayer stop time). The validity of the initial interlayer stop time βtin can be determined from the comparison result. If the initial interlayer stop time βtin is not appropriate, an appropriate alternative to the initial interlayer stop time βtin is obtained immediately after completion of the formation of the single layer on the substrate 3 (immediately after the start of the interlayer stop time). The interlayer stop time βt ₀ can be calculated based on the initial thermocouple temperature drop curve L, and the vacuum film forming apparatus 100 can perform a plurality of operations with different materials on the substrate 3 by such a quick calculation operation of the interlayer stop time βt ₀ . When continuously depositing a vapor deposition film made of a single layer, it is possible to optimize the preheating operation of the vapor deposition material.

  Hereinafter, the effect of optimizing the preheating operation of the vapor deposition material will be described using an example in which different vapor deposition materials are set in each of the pair of evaporation sources 2 in the vacuum film forming apparatus 100 shown in FIG. .

  A vapor deposition material of a different material is set in each of the pair of evaporation sources 2 shown in FIG. 1, and the control device 12 interlocks with switching between the heating operation by the electron gun 2b and the opening / closing operation by the shutter member 2c. The substrate 3 is controlled so that vapor deposition particles of different materials are alternately attached.

  Here, the control device 12 starts the film formation on the substrate 3 by the other evaporation source 2 after the film formation operation on the substrate 3 by one evaporation source 2 (the heating of one evaporation source 2 ends) (the other). In general, prior to the elapse of the interlayer stop time accompanying the end of heating of one evaporation source 2, the vapor deposition material of the other evaporation source 2 is transferred to the electron gun 2b. Is also controlled in advance to preheat to a constant temperature.

  If the preheating time of the vapor deposition material of the other evaporation source 2 is too early, the vapor deposition material is wasted, which is not desirable. Also, if the preheating time of the vapor deposition material is too late, the vapor deposition particles cannot be released promptly when the interlayer stop time elapses, which is undesirable because the film formation tact time of the vacuum film formation apparatus 100 is delayed.

According to the vacuum film forming apparatus 100 according to the first embodiment, prior to the arrival of the elapsed time of the interlayer stop time, an appropriate interlayer stop time βt ₀ (when the initial interlayer stop time βtin is not appropriate) Based on the thermocouple temperature drop curve L, it can be estimated quickly and accurately, so that the preheating time of the vapor deposition material in the vacuum film forming apparatus 100 can be properly predicted, and as a result, a plurality of different materials for the substrate 3 can be used. Even when a vapor deposition film composed of a single layer is continuously formed, waste of vapor deposition material of the vacuum film formation apparatus 100 and delay in film formation tact can be prevented in advance.

  ADVANTAGE OF THE INVENTION According to this invention, the temperature of the board | substrate arrange | positioned in a vacuum chamber and rotating can be calculated correctly, for example, it can apply to the use of the vacuum film-forming apparatus which forms a vapor deposition film in a board | substrate.

It is sectional drawing which showed the structure of the vacuum film-forming apparatus which concerns on embodiment of this invention. It is sectional drawing which expanded and showed the periphery structure of the hollow rotary body holding the substrate holder of the vacuum film-forming apparatus shown in FIG. It is sectional drawing which illustrated the structure of the front-end | tip part of a 1st temperature measurement means. It is the figure which showed an example of the result of an element test, and is the figure which took time on the horizontal axis and took the substrate temperature (Fig. 4 (a)) and the thermocouple temperature (Fig. 4 (b)) on the vertical axis. is there. It is the flowchart which showed the setting change operation example of the interlayer stop time in the nth single layer and the next (n + 1) th single layer in the vapor deposition film formed in the board | substrate.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 1a Vacuum chamber wall 1e Vacuum chamber internal space 2 Evaporation source 2a Crucible 2b Electron gun 2c Shutter member 3 Substrate 4 Substrate holder 5 Deposition hole 6 Hollow rotating body 7 First plate plate 7a First plate plate Opening 8 second plate plate 8a second plate plate opening 9 light monitor 9a glass plate 10 for monitoring first temperature measuring means 10a cover member 10b stainless steel tube 10c thermocouple 11 second temperature measuring means 12 controller 21 Belt 22 Pulley 23, 24 Oil seal 25 Upper bearing 26 Lower bearing 27 Rotation drive device 28 Housing member 29 Inner lid 30 Outer lid 31 Spacer 32 Bolt 100 Vacuum film forming apparatus

Claims (11)

A vacuum chamber;
A substrate holder disposed in the vacuum chamber to hold and rotate the substrate;
An evaporation source disposed in the vacuum chamber facing the substrate holder and emitting vapor deposition particles toward the substrate by heating the vapor deposition material;
Temperature measuring means for detecting the heat rays by receiving the heat rays radiated from the vapor deposition material;
A vacuum film forming apparatus. The temperature measuring means includes a linear temperature sensor, and a concave cover member surrounding at least an end of the temperature sensor,
With
The vacuum film-forming apparatus according to claim 1, wherein an end of the temperature sensor and the cover member are in contact with each other. While holding and rotating the substrate holder, comprising a hollow rotating body having a hollow region,
The vacuum film forming apparatus according to claim 1, wherein the substrate holder is an annular body having an opening, and the temperature measurement unit is inserted into the vacuum chamber through the hollow region toward the opening.   The vacuum film forming apparatus according to claim 1, wherein the temperature measuring unit is inserted into the vacuum chamber between the periphery of the substrate holder and the wall of the vacuum chamber. The temperature measuring means is inserted into the vacuum chamber through the hollow region toward the opening, and receives the heat rays radiated from the vapor deposition material, thereby detecting the heat rays; A second temperature measuring unit that is inserted into the vacuum chamber between the periphery of the substrate holder and the wall of the vacuum chamber and detects the heat rays by receiving the heat rays radiated from the vapor deposition material; Composed of,
4. The vacuum film forming apparatus according to claim 3, wherein the temperature of the substrate is calculated based on a signal output from the first temperature measuring unit and a signal output from the second temperature measuring unit.   The substrate holder has an inclined surface inclined toward the evaporation source side from the center toward the periphery, and the tip of the first temperature measuring means is substantially flush with the opening of the substrate holder formed at the center. The vacuum film forming apparatus according to claim 5, wherein the vacuum film forming apparatus is positioned above and a tip of the second temperature measuring means is positioned substantially on the same plane as the surroundings in parallel with the opening.   The vacuum film forming apparatus according to claim 1, further comprising a control device that calculates a temperature of the substrate based on a signal output from the temperature measuring unit.   When the film of the substrate obtained by depositing the vapor deposition particles has a laminated structure divided into a plurality of layers, the control device can perform the deposition of the vapor deposition particles after the film formation of each layer on the substrate is completed. 8. The vacuum film forming apparatus according to claim 7, wherein an interlayer stop time for stopping the release to the substrate is set based on the signal.   The vacuum control according to claim 8, wherein the control device compares the signal immediately after the start of the interlayer stop time with a preset value, and determines the validity of the interlayer stop time based on the comparison result. Membrane device.   If the interlayer stop time is not appropriate, the control device calculates a time constant and a settling time corresponding to a change with time of the signal after the start of the interlayer stop time, and then obtains from the time constant and the settling time. The vacuum film-forming apparatus according to claim 9, wherein the interlayer stop time is reset based on a time-dependent change profile of the signal.   The film has a first layer and a second layer which are continuously formed of different materials, and the control device stops the interlayer after the film formation of the first layer on the substrate is completed. The vacuum film-forming apparatus according to claim 10, wherein a vapor deposition material for forming the second layer on the substrate is controlled to be preheated based on the interlayer stop time before the passage of time.

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