JP2006096813A - Silica base film-forming coating liquid - Google Patents
Silica base film-forming coating liquid Download PDFInfo
- Publication number
- JP2006096813A JP2006096813A JP2004282069A JP2004282069A JP2006096813A JP 2006096813 A JP2006096813 A JP 2006096813A JP 2004282069 A JP2004282069 A JP 2004282069A JP 2004282069 A JP2004282069 A JP 2004282069A JP 2006096813 A JP2006096813 A JP 2006096813A
- Authority
- JP
- Japan
- Prior art keywords
- silica
- forming
- based film
- coating liquid
- siloxane polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 238000000576 coating method Methods 0.000 title claims abstract description 52
- 239000011248 coating agent Substances 0.000 title claims abstract description 50
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 47
- 239000007788 liquid Substances 0.000 title claims abstract description 16
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims abstract description 35
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229920000642 polymer Polymers 0.000 claims abstract description 22
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002904 solvent Substances 0.000 claims abstract description 16
- 238000006460 hydrolysis reaction Methods 0.000 claims description 23
- 125000000217 alkyl group Chemical group 0.000 claims description 17
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 12
- 150000004756 silanes Chemical class 0.000 claims description 12
- 230000007062 hydrolysis Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 230000003301 hydrolyzing effect Effects 0.000 claims description 3
- 239000011800 void material Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 33
- -1 silane compound Chemical class 0.000 description 29
- 229910000077 silane Inorganic materials 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 9
- 125000001183 hydrocarbyl group Chemical group 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003377 acid catalyst Substances 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 150000005846 sugar alcohols Polymers 0.000 description 4
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 2
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 2
- JVUVKQDVTIIMOD-UHFFFAOYSA-N dimethoxy(dipropyl)silane Chemical compound CCC[Si](OC)(OC)CCC JVUVKQDVTIIMOD-UHFFFAOYSA-N 0.000 description 2
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 2
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- 150000003460 sulfonic acids Chemical class 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 description 1
- HQSLKNLISLWZQH-UHFFFAOYSA-N 1-(2-propoxyethoxy)propane Chemical compound CCCOCCOCCC HQSLKNLISLWZQH-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- CAQYAZNFWDDMIT-UHFFFAOYSA-N 1-ethoxy-2-methoxyethane Chemical compound CCOCCOC CAQYAZNFWDDMIT-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- KVMAQXBSRFDBSI-UHFFFAOYSA-N 2-methoxyethoxy(dimethyl)silane Chemical compound COCCO[SiH](C)C KVMAQXBSRFDBSI-UHFFFAOYSA-N 0.000 description 1
- NTGFGMVYTAPOSF-UHFFFAOYSA-N 2-methoxyethoxy(dipropyl)silane Chemical compound C(CC)[SiH](OCCOC)CCC NTGFGMVYTAPOSF-UHFFFAOYSA-N 0.000 description 1
- HRWFFDJQZODCGS-UHFFFAOYSA-N 2-methoxyethoxy(methyl)silane Chemical compound COCCO[SiH2]C HRWFFDJQZODCGS-UHFFFAOYSA-N 0.000 description 1
- XOTZXZZXBQKUNZ-UHFFFAOYSA-N 2-methoxyethoxy(propyl)silane Chemical compound C(CC)[SiH2]OCCOC XOTZXZZXBQKUNZ-UHFFFAOYSA-N 0.000 description 1
- WKRJCCZAZDZNJL-UHFFFAOYSA-N 2-methoxyethoxysilicon Chemical compound COCCO[Si] WKRJCCZAZDZNJL-UHFFFAOYSA-N 0.000 description 1
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 1
- SAQJKAAHQOXPQA-UHFFFAOYSA-N 3-(2-methoxyethoxy)propoxy-methylsilane Chemical compound C[SiH2]OCCCOCCOC SAQJKAAHQOXPQA-UHFFFAOYSA-N 0.000 description 1
- JZOPEAAYHHDTRJ-UHFFFAOYSA-N 3-(2-methoxyethoxy)propoxy-propylsilane Chemical compound C(CC)[SiH2]OCCCOCCOC JZOPEAAYHHDTRJ-UHFFFAOYSA-N 0.000 description 1
- RVDMGSOWQHKICR-UHFFFAOYSA-N 3-(2-methoxyethoxy)propoxysilane Chemical compound COCCOCCCO[SiH3] RVDMGSOWQHKICR-UHFFFAOYSA-N 0.000 description 1
- GMRWKIKDDGCKKP-UHFFFAOYSA-N 3-ethoxypropoxy(dimethyl)silane Chemical compound C[SiH](OCCCOCC)C GMRWKIKDDGCKKP-UHFFFAOYSA-N 0.000 description 1
- OFTFAIWXZRZGDV-UHFFFAOYSA-N 3-ethoxypropoxy(propyl)silane Chemical compound C(CC)[SiH2]OCCCOCC OFTFAIWXZRZGDV-UHFFFAOYSA-N 0.000 description 1
- DPAWRIYVWQXVHR-UHFFFAOYSA-N 3-ethoxypropoxy-ethyl-methylsilane Chemical compound C[SiH](OCCCOCC)CC DPAWRIYVWQXVHR-UHFFFAOYSA-N 0.000 description 1
- VKIHJUUXHCZCAG-UHFFFAOYSA-N 3-methoxypropoxy(methyl)silane Chemical compound COCCCO[SiH2]C VKIHJUUXHCZCAG-UHFFFAOYSA-N 0.000 description 1
- BNHRZSXEOVMJJG-UHFFFAOYSA-N 3-methoxypropoxysilane Chemical compound COCCCO[SiH3] BNHRZSXEOVMJJG-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- MXDLYHWABBLCEM-UHFFFAOYSA-N 5-ethoxypentoxysilane Chemical compound C(C)OCCCCCO[SiH3] MXDLYHWABBLCEM-UHFFFAOYSA-N 0.000 description 1
- JOVMKRBCVBAGPV-UHFFFAOYSA-N 5-methoxypentoxy(methyl)silane Chemical compound C[SiH2]OCCCCCOC JOVMKRBCVBAGPV-UHFFFAOYSA-N 0.000 description 1
- JVYVIFOODMGVPU-UHFFFAOYSA-N 5-methoxypentoxysilane Chemical compound COCCCCCO[SiH3] JVYVIFOODMGVPU-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- JQVCREABPACLSP-UHFFFAOYSA-N C=1C=CC=CC=1O[SiH2]OC1=CC=CC=C1 Chemical compound C=1C=CC=CC=1O[SiH2]OC1=CC=CC=C1 JQVCREABPACLSP-UHFFFAOYSA-N 0.000 description 1
- BGWWGDVCZYRRSZ-UHFFFAOYSA-N C=1C=CC=CC=1O[SiH](OC=1C=CC=CC=1)OC1=CC=CC=C1 Chemical compound C=1C=CC=CC=1O[SiH](OC=1C=CC=CC=1)OC1=CC=CC=C1 BGWWGDVCZYRRSZ-UHFFFAOYSA-N 0.000 description 1
- SCHYFEVPIBKUNB-UHFFFAOYSA-N CCCCCO[SiH](OCC)OCC Chemical compound CCCCCO[SiH](OCC)OCC SCHYFEVPIBKUNB-UHFFFAOYSA-N 0.000 description 1
- PBDYQPOAXBEPJI-UHFFFAOYSA-N CCCCO[SiH](OC)OC Chemical compound CCCCO[SiH](OC)OC PBDYQPOAXBEPJI-UHFFFAOYSA-N 0.000 description 1
- LDIKGRPEVICZDG-UHFFFAOYSA-N CCCC[SiH2]OCCOC Chemical compound CCCC[SiH2]OCCOC LDIKGRPEVICZDG-UHFFFAOYSA-N 0.000 description 1
- NTHKCSDJQGWPJY-UHFFFAOYSA-N CCCC[SiH](OC)OC Chemical compound CCCC[SiH](OC)OC NTHKCSDJQGWPJY-UHFFFAOYSA-N 0.000 description 1
- PMPGBDYFVDJHLK-UHFFFAOYSA-N CCCC[SiH](OCCC)OCCC Chemical compound CCCC[SiH](OCCC)OCCC PMPGBDYFVDJHLK-UHFFFAOYSA-N 0.000 description 1
- CEYKWTJRCMKNKX-UHFFFAOYSA-N CCCO[SiH](OCC)OCC Chemical compound CCCO[SiH](OCC)OCC CEYKWTJRCMKNKX-UHFFFAOYSA-N 0.000 description 1
- UGJLGGUQXBCUIA-UHFFFAOYSA-N CCO[SiH](OC)OC Chemical compound CCO[SiH](OC)OC UGJLGGUQXBCUIA-UHFFFAOYSA-N 0.000 description 1
- ATSKCUWHWYIJMW-UHFFFAOYSA-N CO[SiH2]Oc1ccccc1 Chemical compound CO[SiH2]Oc1ccccc1 ATSKCUWHWYIJMW-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- OAKGITOBDKUFBR-UHFFFAOYSA-N butoxy-butyl-ethoxy-methoxysilane Chemical compound CCCCO[Si](OCC)(OC)CCCC OAKGITOBDKUFBR-UHFFFAOYSA-N 0.000 description 1
- HUUOQEMAQQPKGS-UHFFFAOYSA-N butoxy-ethoxy-ethyl-methoxysilane Chemical compound CCCCO[Si](CC)(OC)OCC HUUOQEMAQQPKGS-UHFFFAOYSA-N 0.000 description 1
- CCBRDEWXSJFAMO-UHFFFAOYSA-N butoxy-ethoxy-methoxy-propylsilane Chemical compound CCCCO[Si](CCC)(OC)OCC CCBRDEWXSJFAMO-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical class CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MIJYHJNSTXWNQX-UHFFFAOYSA-N butyl diethyl methyl silicate Chemical compound CCCCO[Si](OC)(OCC)OCC MIJYHJNSTXWNQX-UHFFFAOYSA-N 0.000 description 1
- OIEKEOOORZPUGH-UHFFFAOYSA-N butyl diethyl propyl silicate Chemical compound CCCCO[Si](OCC)(OCC)OCCC OIEKEOOORZPUGH-UHFFFAOYSA-N 0.000 description 1
- LXTZTIXTSZSGBR-UHFFFAOYSA-N butyl ethyl dipropyl silicate Chemical compound CCCCO[Si](OCC)(OCCC)OCCC LXTZTIXTSZSGBR-UHFFFAOYSA-N 0.000 description 1
- AGBZIWDKCKUACI-UHFFFAOYSA-N butyl ethyl methyl propyl silicate Chemical compound CCCCO[Si](OC)(OCC)OCCC AGBZIWDKCKUACI-UHFFFAOYSA-N 0.000 description 1
- WWIIWYLGTMNOEU-UHFFFAOYSA-N butyl methyl dipropyl silicate Chemical compound CCCCO[Si](OC)(OCCC)OCCC WWIIWYLGTMNOEU-UHFFFAOYSA-N 0.000 description 1
- GPLARHNOLLDPGA-UHFFFAOYSA-N butyl trimethyl silicate Chemical compound CCCCO[Si](OC)(OC)OC GPLARHNOLLDPGA-UHFFFAOYSA-N 0.000 description 1
- ZEZXMFBCRYGNNP-UHFFFAOYSA-N butyl(diethoxy)silane Chemical compound CCCC[SiH](OCC)OCC ZEZXMFBCRYGNNP-UHFFFAOYSA-N 0.000 description 1
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 description 1
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 description 1
- RUCGYSQSVJNDCX-UHFFFAOYSA-N butyl(tripentoxy)silane Chemical compound CCCCCO[Si](CCCC)(OCCCCC)OCCCCC RUCGYSQSVJNDCX-UHFFFAOYSA-N 0.000 description 1
- OGCNPMTZBJEZKT-UHFFFAOYSA-N butyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(CCCC)OC1=CC=CC=C1 OGCNPMTZBJEZKT-UHFFFAOYSA-N 0.000 description 1
- GNRBSDIBKIHSJH-UHFFFAOYSA-N butyl(tripropoxy)silane Chemical compound CCCC[Si](OCCC)(OCCC)OCCC GNRBSDIBKIHSJH-UHFFFAOYSA-N 0.000 description 1
- AAVHUXGAYVEBMM-UHFFFAOYSA-N butyl-[3-(2-methoxyethoxy)propoxy]silane Chemical compound CCCC[SiH2]OCCCOCCOC AAVHUXGAYVEBMM-UHFFFAOYSA-N 0.000 description 1
- AFNPFLDWLMEASV-UHFFFAOYSA-N butyl-diethoxy-methylsilane Chemical compound CCCC[Si](C)(OCC)OCC AFNPFLDWLMEASV-UHFFFAOYSA-N 0.000 description 1
- ZQTCJZZVNNQCRS-UHFFFAOYSA-N butyl-diethoxy-propylsilane Chemical compound CCCC[Si](CCC)(OCC)OCC ZQTCJZZVNNQCRS-UHFFFAOYSA-N 0.000 description 1
- OOSZILWKTQCRSZ-UHFFFAOYSA-N butyl-dimethoxy-methylsilane Chemical compound CCCC[Si](C)(OC)OC OOSZILWKTQCRSZ-UHFFFAOYSA-N 0.000 description 1
- WEPTUKVCIZSMNO-UHFFFAOYSA-N butyl-dimethoxy-propylsilane Chemical compound CCCC[Si](OC)(OC)CCC WEPTUKVCIZSMNO-UHFFFAOYSA-N 0.000 description 1
- JVYLRDJQLUXKSK-UHFFFAOYSA-N butyl-ethoxy-propoxysilane Chemical compound CCCC[SiH](OCC)OCCC JVYLRDJQLUXKSK-UHFFFAOYSA-N 0.000 description 1
- JFPQZHIIXIHEEG-UHFFFAOYSA-N butyl-methoxy-dipentoxysilane Chemical compound CCCCCO[Si](CCCC)(OC)OCCCCC JFPQZHIIXIHEEG-UHFFFAOYSA-N 0.000 description 1
- YIKWDPVXTZFQFF-UHFFFAOYSA-N butyl-methoxy-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](OC)(CCCC)OC1=CC=CC=C1 YIKWDPVXTZFQFF-UHFFFAOYSA-N 0.000 description 1
- CFGAMKNEOXZXAN-UHFFFAOYSA-N butyl-methoxy-dipropoxysilane Chemical compound CCCC[Si](OC)(OCCC)OCCC CFGAMKNEOXZXAN-UHFFFAOYSA-N 0.000 description 1
- MRXFMDLZOBFPIP-UHFFFAOYSA-N butyl-methyl-dipentoxysilane Chemical compound CCCCCO[Si](C)(CCCC)OCCCCC MRXFMDLZOBFPIP-UHFFFAOYSA-N 0.000 description 1
- CDYVRVUUWSHRMD-UHFFFAOYSA-N butyl-methyl-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](C)(CCCC)OC1=CC=CC=C1 CDYVRVUUWSHRMD-UHFFFAOYSA-N 0.000 description 1
- WHFVJENFZHIOKB-UHFFFAOYSA-N butyl-methyl-dipropoxysilane Chemical compound CCCC[Si](C)(OCCC)OCCC WHFVJENFZHIOKB-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- DKXKWUWRJAEPGM-UHFFFAOYSA-N dibutyl dimethyl silicate Chemical compound CCCCO[Si](OC)(OC)OCCCC DKXKWUWRJAEPGM-UHFFFAOYSA-N 0.000 description 1
- DGPFXVBYDAVXLX-UHFFFAOYSA-N dibutyl(diethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)CCCC DGPFXVBYDAVXLX-UHFFFAOYSA-N 0.000 description 1
- YPENMAABQGWRBR-UHFFFAOYSA-N dibutyl(dimethoxy)silane Chemical compound CCCC[Si](OC)(OC)CCCC YPENMAABQGWRBR-UHFFFAOYSA-N 0.000 description 1
- LWXABEZWLYKMRO-UHFFFAOYSA-N dibutyl-ethoxy-propoxysilane Chemical compound CCCC[Si](CCCC)(OCC)OCCC LWXABEZWLYKMRO-UHFFFAOYSA-N 0.000 description 1
- IXWKLWJXDYRDML-UHFFFAOYSA-N dibutyl-methoxy-phenoxysilane Chemical compound CCCC[Si](CCCC)(OC)OC1=CC=CC=C1 IXWKLWJXDYRDML-UHFFFAOYSA-N 0.000 description 1
- SUXFXSDGMCJFMP-UHFFFAOYSA-N dibutyl-methoxy-propoxysilane Chemical compound CCCC[Si](CCCC)(OC)OCCC SUXFXSDGMCJFMP-UHFFFAOYSA-N 0.000 description 1
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 1
- HZLIIKNXMLEWPA-UHFFFAOYSA-N diethoxy(dipropyl)silane Chemical compound CCC[Si](CCC)(OCC)OCC HZLIIKNXMLEWPA-UHFFFAOYSA-N 0.000 description 1
- AWQTZFCYSLRFJO-UHFFFAOYSA-N diethoxy(methoxy)silane Chemical compound CCO[SiH](OC)OCC AWQTZFCYSLRFJO-UHFFFAOYSA-N 0.000 description 1
- MYEKFZTYZUIIAE-UHFFFAOYSA-N diethoxy(phenoxy)silane Chemical compound CCO[SiH](OCC)Oc1ccccc1 MYEKFZTYZUIIAE-UHFFFAOYSA-N 0.000 description 1
- FZQNBVBLHJXOEA-UHFFFAOYSA-N diethoxy(propyl)silane Chemical compound CCC[SiH](OCC)OCC FZQNBVBLHJXOEA-UHFFFAOYSA-N 0.000 description 1
- KWHPGQVFPWGFMG-UHFFFAOYSA-N diethoxy-ethyl-methoxysilane Chemical compound CCO[Si](CC)(OC)OCC KWHPGQVFPWGFMG-UHFFFAOYSA-N 0.000 description 1
- UWGJCHRFALXDAR-UHFFFAOYSA-N diethoxy-ethyl-methylsilane Chemical compound CCO[Si](C)(CC)OCC UWGJCHRFALXDAR-UHFFFAOYSA-N 0.000 description 1
- VUVODZCTKMTLTH-UHFFFAOYSA-N diethoxy-methoxy-methylsilane Chemical compound CCO[Si](C)(OC)OCC VUVODZCTKMTLTH-UHFFFAOYSA-N 0.000 description 1
- PJKZHPDNDUQMNP-UHFFFAOYSA-N diethoxy-methoxy-propylsilane Chemical compound CCC[Si](OC)(OCC)OCC PJKZHPDNDUQMNP-UHFFFAOYSA-N 0.000 description 1
- UJTGYJODGVUOGO-UHFFFAOYSA-N diethoxy-methyl-propylsilane Chemical compound CCC[Si](C)(OCC)OCC UJTGYJODGVUOGO-UHFFFAOYSA-N 0.000 description 1
- VGWJKDPTLUDSJT-UHFFFAOYSA-N diethyl dimethyl silicate Chemical compound CCO[Si](OC)(OC)OCC VGWJKDPTLUDSJT-UHFFFAOYSA-N 0.000 description 1
- WXAYXYTUOFVMKE-UHFFFAOYSA-N diethyl dipropyl silicate Chemical compound CCCO[Si](OCC)(OCC)OCCC WXAYXYTUOFVMKE-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- GDKYIZVVUAWETK-UHFFFAOYSA-N diethyl-methoxy-propoxysilane Chemical compound CCCO[Si](CC)(CC)OC GDKYIZVVUAWETK-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- RXBGEIGGCCSMHC-UHFFFAOYSA-N dimethoxy(propoxy)silane Chemical compound CCCO[SiH](OC)OC RXBGEIGGCCSMHC-UHFFFAOYSA-N 0.000 description 1
- SGKDAFJDYSMACD-UHFFFAOYSA-N dimethoxy(propyl)silane Chemical compound CCC[SiH](OC)OC SGKDAFJDYSMACD-UHFFFAOYSA-N 0.000 description 1
- XKRPWHZLROBLDI-UHFFFAOYSA-N dimethoxy-methyl-propylsilane Chemical compound CCC[Si](C)(OC)OC XKRPWHZLROBLDI-UHFFFAOYSA-N 0.000 description 1
- HOXUFWMHAIJENN-UHFFFAOYSA-N dimethyl dipropyl silicate Chemical compound CCCO[Si](OC)(OC)OCCC HOXUFWMHAIJENN-UHFFFAOYSA-N 0.000 description 1
- QVRPADXIQWATCJ-UHFFFAOYSA-N dimethyl(dipentoxy)silane Chemical compound CCCCCO[Si](C)(C)OCCCCC QVRPADXIQWATCJ-UHFFFAOYSA-N 0.000 description 1
- SWLVAJXQIOKFSJ-UHFFFAOYSA-N dimethyl(diphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](C)(C)OC1=CC=CC=C1 SWLVAJXQIOKFSJ-UHFFFAOYSA-N 0.000 description 1
- ZIDTUTFKRRXWTK-UHFFFAOYSA-N dimethyl(dipropoxy)silane Chemical compound CCCO[Si](C)(C)OCCC ZIDTUTFKRRXWTK-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- ARZAMTJRZZXHOE-UHFFFAOYSA-N dipentoxy(dipropyl)silane Chemical compound CCCCCO[Si](CCC)(CCC)OCCCCC ARZAMTJRZZXHOE-UHFFFAOYSA-N 0.000 description 1
- GVIRNLPCTJKMAW-UHFFFAOYSA-N dipentoxy(propyl)silane Chemical compound CCCCCO[SiH](CCC)OCCCCC GVIRNLPCTJKMAW-UHFFFAOYSA-N 0.000 description 1
- JFCVQVCWZYWWPV-UHFFFAOYSA-N diphenoxy(dipropyl)silane Chemical compound C=1C=CC=CC=1O[Si](CCC)(CCC)OC1=CC=CC=C1 JFCVQVCWZYWWPV-UHFFFAOYSA-N 0.000 description 1
- FODRZLHRNBNMCO-UHFFFAOYSA-N diphenoxy(propoxy)silane Chemical compound CCCO[SiH](Oc1ccccc1)Oc1ccccc1 FODRZLHRNBNMCO-UHFFFAOYSA-N 0.000 description 1
- XNAZVASFWJAZNT-UHFFFAOYSA-N diphenoxy(propyl)silane Chemical compound CCC[SiH](Oc1ccccc1)Oc1ccccc1 XNAZVASFWJAZNT-UHFFFAOYSA-N 0.000 description 1
- SACPKRUZWRIEBW-UHFFFAOYSA-N dipropoxysilane Chemical compound CCCO[SiH2]OCCC SACPKRUZWRIEBW-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- CEZDZFIYWRNIOW-UHFFFAOYSA-N ethoxy(diphenoxy)silane Chemical compound CCO[SiH](Oc1ccccc1)Oc1ccccc1 CEZDZFIYWRNIOW-UHFFFAOYSA-N 0.000 description 1
- DMSVKKSBEJFTSD-UHFFFAOYSA-N ethoxy(dipropoxy)silane Chemical compound CCCO[SiH](OCC)OCCC DMSVKKSBEJFTSD-UHFFFAOYSA-N 0.000 description 1
- OMUZVOVPUNRELL-UHFFFAOYSA-N ethoxy(phenoxy)silane Chemical compound CCO[SiH2]Oc1ccccc1 OMUZVOVPUNRELL-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- LWVQRZRMDDXSQO-UHFFFAOYSA-N ethyl methyl dipropyl silicate Chemical compound CCCO[Si](OC)(OCC)OCCC LWVQRZRMDDXSQO-UHFFFAOYSA-N 0.000 description 1
- ITAHRPSKCCPKOK-UHFFFAOYSA-N ethyl trimethyl silicate Chemical compound CCO[Si](OC)(OC)OC ITAHRPSKCCPKOK-UHFFFAOYSA-N 0.000 description 1
- PZORNJWVGCSGJN-UHFFFAOYSA-N ethyl(dipentoxy)silane Chemical compound CCCCCO[SiH](CC)OCCCCC PZORNJWVGCSGJN-UHFFFAOYSA-N 0.000 description 1
- XBQKHZAEBLQEHX-UHFFFAOYSA-N ethyl(diphenoxy)silane Chemical compound CC[SiH](Oc1ccccc1)Oc1ccccc1 XBQKHZAEBLQEHX-UHFFFAOYSA-N 0.000 description 1
- BNFBSHKADAKNSK-UHFFFAOYSA-N ethyl(dipropoxy)silane Chemical compound CCCO[SiH](CC)OCCC BNFBSHKADAKNSK-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- CZZBVPSIWUGVPZ-UHFFFAOYSA-N ethyl(tripentoxy)silane Chemical compound CCCCCO[Si](CC)(OCCCCC)OCCCCC CZZBVPSIWUGVPZ-UHFFFAOYSA-N 0.000 description 1
- HGWSCXYVBZYYDK-UHFFFAOYSA-N ethyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(CC)OC1=CC=CC=C1 HGWSCXYVBZYYDK-UHFFFAOYSA-N 0.000 description 1
- KUCGHDUQOVVQED-UHFFFAOYSA-N ethyl(tripropoxy)silane Chemical compound CCCO[Si](CC)(OCCC)OCCC KUCGHDUQOVVQED-UHFFFAOYSA-N 0.000 description 1
- BKPOHJLJSNVXOQ-UHFFFAOYSA-N ethyl-(2-methoxyethoxy)-propylsilane Chemical compound C(C)[SiH](OCCOC)CCC BKPOHJLJSNVXOQ-UHFFFAOYSA-N 0.000 description 1
- HTSRFYSEWIPFNI-UHFFFAOYSA-N ethyl-dimethoxy-methylsilane Chemical compound CC[Si](C)(OC)OC HTSRFYSEWIPFNI-UHFFFAOYSA-N 0.000 description 1
- MXIPHWDAHRGDRK-UHFFFAOYSA-N ethyl-dimethoxy-propylsilane Chemical compound CCC[Si](CC)(OC)OC MXIPHWDAHRGDRK-UHFFFAOYSA-N 0.000 description 1
- NKRGKSMCFNVANI-UHFFFAOYSA-N ethyl-methoxy-dipentoxysilane Chemical compound CCCCCO[Si](CC)(OC)OCCCCC NKRGKSMCFNVANI-UHFFFAOYSA-N 0.000 description 1
- PSKLDHFDQSYMOL-UHFFFAOYSA-N ethyl-methoxy-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](OC)(CC)OC1=CC=CC=C1 PSKLDHFDQSYMOL-UHFFFAOYSA-N 0.000 description 1
- HIPNKAPHGKUQDM-UHFFFAOYSA-N ethyl-methoxy-dipropoxysilane Chemical compound CCCO[Si](CC)(OC)OCCC HIPNKAPHGKUQDM-UHFFFAOYSA-N 0.000 description 1
- UNBRJJYHSVNZBW-UHFFFAOYSA-N ethyl-methoxy-propoxysilane Chemical compound CCCO[SiH](CC)OC UNBRJJYHSVNZBW-UHFFFAOYSA-N 0.000 description 1
- QGLJHHJQWDIRDJ-UHFFFAOYSA-N ethyl-methyl-dipentoxysilane Chemical compound CCCCCO[Si](C)(CC)OCCCCC QGLJHHJQWDIRDJ-UHFFFAOYSA-N 0.000 description 1
- QIDROACCJPQEGZ-UHFFFAOYSA-N ethyl-methyl-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](C)(CC)OC1=CC=CC=C1 QIDROACCJPQEGZ-UHFFFAOYSA-N 0.000 description 1
- GXAOCGRUWCYNML-UHFFFAOYSA-N ethyl-methyl-dipropoxysilane Chemical compound CCCO[Si](C)(CC)OCCC GXAOCGRUWCYNML-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229940093915 gynecological organic acid Drugs 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- TZMQHOJDDMFGQX-UHFFFAOYSA-N hexane-1,1,1-triol Chemical compound CCCCCC(O)(O)O TZMQHOJDDMFGQX-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- QBCNIGWTXULERZ-UHFFFAOYSA-N methoxy(dipropoxy)silane Chemical compound CCCO[SiH](OC)OCCC QBCNIGWTXULERZ-UHFFFAOYSA-N 0.000 description 1
- GQDLEOAFQKIWSO-UHFFFAOYSA-N methoxy-dipentoxy-propylsilane Chemical compound CCCCCO[Si](CCC)(OC)OCCCCC GQDLEOAFQKIWSO-UHFFFAOYSA-N 0.000 description 1
- JTOARSATYYFDSP-UHFFFAOYSA-N methoxy-diphenoxy-propylsilane Chemical compound C=1C=CC=CC=1O[Si](OC)(CCC)OC1=CC=CC=C1 JTOARSATYYFDSP-UHFFFAOYSA-N 0.000 description 1
- NPKCRFQGOQDCPM-UHFFFAOYSA-N methoxy-dipropoxy-propylsilane Chemical compound CCCO[Si](CCC)(OC)OCCC NPKCRFQGOQDCPM-UHFFFAOYSA-N 0.000 description 1
- SPRNSXHIODBTJQ-UHFFFAOYSA-N methoxy-methyl-dipentoxysilane Chemical compound CCCCCO[Si](C)(OC)OCCCCC SPRNSXHIODBTJQ-UHFFFAOYSA-N 0.000 description 1
- IKESVYSZFPIZDP-UHFFFAOYSA-N methoxy-methyl-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](C)(OC)OC1=CC=CC=C1 IKESVYSZFPIZDP-UHFFFAOYSA-N 0.000 description 1
- JRUSMKPBJTYUCR-UHFFFAOYSA-N methoxy-methyl-dipropoxysilane Chemical compound CCCO[Si](C)(OC)OCCC JRUSMKPBJTYUCR-UHFFFAOYSA-N 0.000 description 1
- NJISVYSHLYACRT-UHFFFAOYSA-N methoxy-methyl-phenoxysilane Chemical compound CO[SiH](C)Oc1ccccc1 NJISVYSHLYACRT-UHFFFAOYSA-N 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- PKWNWHSONVFEON-UHFFFAOYSA-N methyl tripentyl silicate Chemical compound CCCCCO[Si](OC)(OCCCCC)OCCCCC PKWNWHSONVFEON-UHFFFAOYSA-N 0.000 description 1
- WUHFHHFIAKZOGV-UHFFFAOYSA-N methyl triphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(OC)OC1=CC=CC=C1 WUHFHHFIAKZOGV-UHFFFAOYSA-N 0.000 description 1
- QRBAVICMCJULJS-UHFFFAOYSA-N methyl(tripentoxy)silane Chemical compound CCCCCO[Si](C)(OCCCCC)OCCCCC QRBAVICMCJULJS-UHFFFAOYSA-N 0.000 description 1
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000004028 organic sulfates Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- JGTNAGYHADQMCM-UHFFFAOYSA-N perfluorobutanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-N 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical class [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- KCTGOQZIKPDZNK-UHFFFAOYSA-N tetrapentyl silicate Chemical compound CCCCCO[Si](OCCCCC)(OCCCCC)OCCCCC KCTGOQZIKPDZNK-UHFFFAOYSA-N 0.000 description 1
- ADLSSRLDGACTEX-UHFFFAOYSA-N tetraphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 ADLSSRLDGACTEX-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- HSDAZXVGQVMFAY-UHFFFAOYSA-N tributyl methyl silicate Chemical compound CCCCO[Si](OC)(OCCCC)OCCCC HSDAZXVGQVMFAY-UHFFFAOYSA-N 0.000 description 1
- PZOOLKGCOFWELU-UHFFFAOYSA-N tributyl propyl silicate Chemical compound CCCCO[Si](OCCC)(OCCCC)OCCCC PZOOLKGCOFWELU-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- CXZMPNCYSOLUEK-UHFFFAOYSA-N triethyl propyl silicate Chemical compound CCCO[Si](OCC)(OCC)OCC CXZMPNCYSOLUEK-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- WKEXHTMMGBYMTA-UHFFFAOYSA-N trimethyl propyl silicate Chemical compound CCCO[Si](OC)(OC)OC WKEXHTMMGBYMTA-UHFFFAOYSA-N 0.000 description 1
- OMBAQAOBNOSBNU-UHFFFAOYSA-N tripentoxy(propyl)silane Chemical compound CCCCCO[Si](CCC)(OCCCCC)OCCCCC OMBAQAOBNOSBNU-UHFFFAOYSA-N 0.000 description 1
- XJXSSNSCWGKDOW-UHFFFAOYSA-N tripentoxysilane Chemical compound CCCCCO[SiH](OCCCCC)OCCCCC XJXSSNSCWGKDOW-UHFFFAOYSA-N 0.000 description 1
- AMUIJRKZTXWCEA-UHFFFAOYSA-N triphenoxy(propyl)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(CCC)OC1=CC=CC=C1 AMUIJRKZTXWCEA-UHFFFAOYSA-N 0.000 description 1
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
Landscapes
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
Abstract
Description
本発明は、シリカ系被膜形成用塗布液に関する。 The present invention relates to a coating liquid for forming a silica-based film.
従来より、半導体素子や液晶素子の基板製造において使用される平坦化膜や層間絶縁膜として、SOG(スピンオングラス)法によるシリカ系被膜がよく用いられる。この手法は、溶剤中にアルコキシシランを溶解し加水分解反応を生じさせて得られる塗布液を、基材上に塗布した後、加熱処理することによりシリカ系被膜を形成する方法である。 Conventionally, silica-based coatings by the SOG (spin on glass) method are often used as planarization films and interlayer insulating films used in the manufacture of substrates for semiconductor elements and liquid crystal elements. This method is a method of forming a silica-based film by applying a coating solution obtained by dissolving alkoxysilane in a solvent to cause a hydrolysis reaction on a substrate and then heat-treating it.
かかるSOG法によりシリカ系被膜を形成するための塗布液(シリカ系被膜形成用塗布液)に関して種々の提案がなされている(例えば、下記特許文献1,2,3)。
近年、半導体素子や液晶素子の分野においては、高集積化、高速化、多機能化等の要求に応えるために、基板上に形成されるパターンの微細化が急速に進んでいる。このため、平坦化膜や層間絶縁膜にあっては、より狭いスペースをボイド無く埋め込むことが要求されるが、従来のシリカ系被膜形成用塗布液ではかかる要求に応えるのが難しい。
本発明は、上記の課題を解決するためになされたものであって、微小なスペースをボイド無く埋め込むことができるシリカ系被膜形成用塗布液を提供することを目的とする。
In recent years, in the field of semiconductor elements and liquid crystal elements, in order to meet the demands for higher integration, higher speed, more functions, etc., the miniaturization of patterns formed on a substrate is rapidly progressing. For this reason, in the flattening film and the interlayer insulating film, it is required to fill a narrower space without voids, but it is difficult to meet such a request with a conventional coating liquid for forming a silica-based film.
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a coating solution for forming a silica-based film that can embed a minute space without voids.
上記の目的を達成するために、本発明のシリカ系被膜形成用塗布液は、シロキサンポリマーと溶剤とを含むシリカ系被膜形成用塗布液において、上記溶剤は、n−ブタノールおよびメチル−3−メトキシプロピオネートを含有することを特徴とする。 In order to achieve the above object, the silica-based film forming coating solution of the present invention is a silica-based film forming coating solution containing a siloxane polymer and a solvent, wherein the solvent includes n-butanol and methyl-3-methoxy. It contains propionate.
本発明によれば、埋め込み性に優れ、微小なスペースをボイド無く埋め込んでシリカ系被膜を形成することができるシリカ系被膜形成用塗布液が得られる。 According to the present invention, it is possible to obtain a coating solution for forming a silica-based film that is excellent in embedding property and can form a silica-based film by filling a minute space without voids.
本発明のシリカ系被膜形成用塗布液に含まれるシロキサンポリマーは、SOG法によるシリカ系被膜の形成材料として知られているものを適宜用いることができる。好ましくは下記一般式(I)で表されるシラン化合物から選択される少なくとも1種を加水分解反応させて得られる反応生成物が用いられる。 As the siloxane polymer contained in the coating solution for forming a silica-based film of the present invention, those known as a material for forming a silica-based film by the SOG method can be appropriately used. Preferably, a reaction product obtained by hydrolyzing at least one selected from silane compounds represented by the following general formula (I) is used.
R4−nSi(OR’)n …(I)
一般式(I)において、Rは水素原子、アルキル基またはフェニル基を表し、R’はアルキル基またはフェニル基を表し、nは2〜4の整数を表す。Siに複数のRが結合している場合、該複数のRは同じであっても異なっていてもよい。またSiに結合している複数の(OR’)基は同じであっても異なっていてもよい。
Rとしてのアルキル基は、好ましくは炭素数1〜20の直鎖状または分岐状のアルキル基であり、より好ましくは炭素数1〜4の直鎖状または分岐状のアルキル基である。
R’としてのアルキル基は好ましくは炭素数1〜5の直鎖状または分岐状のアルキル基である。R’としてのアルキル基は、特に加水分解速度の点から炭素数1または2が好ましい。
R 4-n Si (OR ′) n (I)
In general formula (I), R represents a hydrogen atom, an alkyl group or a phenyl group, R ′ represents an alkyl group or a phenyl group, and n represents an integer of 2 to 4. When a plurality of R are bonded to Si, the plurality of R may be the same or different. The plurality of (OR ′) groups bonded to Si may be the same or different.
The alkyl group as R is preferably a linear or branched alkyl group having 1 to 20 carbon atoms, and more preferably a linear or branched alkyl group having 1 to 4 carbon atoms.
The alkyl group as R ′ is preferably a linear or branched alkyl group having 1 to 5 carbon atoms. The alkyl group as R ′ preferably has 1 or 2 carbon atoms from the viewpoint of hydrolysis rate.
上記シラン化合物を加水分解反応させて得られる反応生成物には、低分子量の加水分解物、および加水分解反応と同時に分子間で脱水縮合反応を生じて生成された縮合物(シロキサンオリゴマー)が含まれ得る。本発明におけるシロキサンポリマーとは、かかる加水分解物または縮合物を含む場合、これらをも含む全体を指す。
本発明のシリカ系被膜形成用塗布液に含まれるシロキサンポリマーの質量平均分子量(Mw)(ゲルパーミエーションクロマトグラフィーによるポリスチレン換算基準、以下同様、)は、1000〜3000が好ましい。より好ましい範囲は1200〜2700であり、さらに好ましい範囲は1500〜2000である。該シロキサンポリマーのMwを上記範囲の下限値以上とすることにより良好な膜形成能が得られ、上記範囲の上限値以下とすることにより良好な埋め込み性および平坦性が得られる。
The reaction product obtained by hydrolyzing the silane compound includes a low molecular weight hydrolyzate and a condensate (siloxane oligomer) produced by causing a dehydration condensation reaction between molecules simultaneously with the hydrolysis reaction. Can be. When the siloxane polymer in the present invention includes such a hydrolyzate or condensate, it refers to the whole including these.
The mass average molecular weight (Mw) (polystyrene conversion standard by gel permeation chromatography, the same shall apply hereinafter) of the siloxane polymer contained in the coating solution for forming a silica-based film of the present invention is preferably 1000 to 3000. A more preferable range is 1200 to 2700, and a further preferable range is 1500 to 2000. When the Mw of the siloxane polymer is at least the lower limit of the above range, good film forming ability is obtained, and when the Mw is at most the upper limit of the above range, good embedding and flatness are obtained.
上記一般式(I)におけるnが4の場合のシラン化合物(i)は下記一般式(II)で表される。
Si(OR1)a(OR2)b(OR3)c(OR4)d …(II)
式中、R1、R2、R3及びR4は、それぞれ独立に上記R’と同じアルキル基またはフェニル基を表す。
a、b、c及びdは、0≦a≦4、0≦b≦4、0≦c≦4、0≦d≦4であって、かつa+b+c+d=4の条件を満たす整数である。
The silane compound (i) when n in the general formula (I) is 4 is represented by the following general formula (II).
Si (OR 1 ) a (OR 2 ) b (OR 3 ) c (OR 4 ) d (II)
In the formula, R 1 , R 2 , R 3 and R 4 each independently represent the same alkyl group or phenyl group as the above R ′.
a, b, c and d are integers satisfying the condition of 0 ≦ a ≦ 4, 0 ≦ b ≦ 4, 0 ≦ c ≦ 4, 0 ≦ d ≦ 4 and a + b + c + d = 4.
一般式(I)におけるnが3の場合のシラン化合物(ii)は下記一般式(III)で表される。
R5Si(OR6)e(OR7)f(OR8)g …(III)
式中、R5は水素原子、上記Rと同じアルキル基、またはフェニル基を表す。R6、R7、及びR8は、それぞれ独立に上記R’と同じアルキル基またはフェニル基を表す。
e、f、及びgは、0≦e≦3、0≦f≦3、0≦g≦3であって、かつ
e+f+g=3の条件を満たす整数である。
The silane compound (ii) when n in the general formula (I) is 3 is represented by the following general formula (III).
R 5 Si (OR 6 ) e (OR 7 ) f (OR 8 ) g (III)
Wherein, R 5 represents a hydrogen atom, the same alkyl groups as the R or a phenyl group. R 6 , R 7 , and R 8 each independently represent the same alkyl group or phenyl group as R ′ described above.
e, f, and g are integers that satisfy 0 ≦ e ≦ 3, 0 ≦ f ≦ 3, 0 ≦ g ≦ 3, and satisfy the condition of e + f + g = 3.
一般式(I)におけるnが2の場合のシラン化合物(iii)は下記一般式(IV)で表される。
R9R10Si(OR11)h(OR12)i …(IV)
式中、R9及びR10は水素原子、上記Rと同じアルキル基、またはフェニル基を表す。R11、及びR12は、それぞれ独立に上記R’と同じアルキル基またはフェニル基を表す。
h及びiは、0≦h≦2、0≦i≦2であって、かつh+i=2の条件を満たす整数である。
The silane compound (iii) when n in the general formula (I) is 2 is represented by the following general formula (IV).
R 9 R 10 Si (OR 11 ) h (OR 12 ) i (IV)
In the formula, R 9 and R 10 each represent a hydrogen atom, the same alkyl group as R, or a phenyl group. R 11 and R 12 each independently represents the same alkyl group or phenyl group as the above R ′.
h and i are integers that satisfy 0 ≦ h ≦ 2, 0 ≦ i ≦ 2, and satisfy the condition of h + i = 2.
シラン化合物(i)の具体例としては、テトラメトキシシラン、テトラエトキシシラン、テトラプロポキシシラン、テトラブトキシシラン、テトラペンチルオキシシラン、テトラフェニルオキシシラン、トリメトキシモノエトキシシラン、ジメトキシジエトキシシラン、トリエトキシモノメトキシシラン、トリメトキシモノプロポキシシラン、モノメトキシトリブトキシシラン、モノメトキシトリペンチルオキシシラン、モノメトキシトリフェニルオキシシラン、ジメトキシジプロポキシシラン、トリプロポキシモノメトキシシラン、トリメトキシモノブトキシシラン、ジメトキシジブトキシシラン、トリエトキシモノプロポキシシラン、ジエトキシジプロポキシシラン、トリブトキシモノプロポキシシラン、ジメトキシモノエトキシモノブトキシシラン、ジエトキシモノメトキシモノブトキシシラン、ジエトキシモノプロポキシモノブトキシシラン、ジプロポキシモノメトキシモノエトキシシラン、ジプロポキシモノメトキシモノブトキシシラン、ジプロポキシモノエトキシモノブトキシシラン、ジブトキシモノメトキシモノエトキシシラン、ジブトキシモノエトキシモノプロポキシシラン、モノメトキシモノエトキシモノプロポキシモノブトキシシランなどのテトラアルコキシシランが挙げられ、中でもテトラメトキシシラン、テトラエトキシシランが好ましい。 Specific examples of the silane compound (i) include tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetrabutoxysilane, tetrapentyloxysilane, tetraphenyloxysilane, trimethoxymonoethoxysilane, dimethoxydiethoxysilane, and triethoxy. Monomethoxysilane, trimethoxymonopropoxysilane, monomethoxytributoxysilane, monomethoxytripentyloxysilane, monomethoxytriphenyloxysilane, dimethoxydipropoxysilane, tripropoxymonomethoxysilane, trimethoxymonobutoxysilane, dimethoxydibutoxy Silane, triethoxymonopropoxysilane, diethoxydipropoxysilane, tributoxymonopropoxysilane, dimethoxymonoethoxymonobutyl Xysilane, diethoxymonomethoxymonobutoxysilane, diethoxymonopropoxymonobutoxysilane, dipropoxymonomethoxymonoethoxysilane, dipropoxymonomethoxymonobutoxysilane, dipropoxymonoethoxymonobutoxysilane, dibutoxymonomethoxymonoethoxysilane, Examples thereof include tetraalkoxysilanes such as dibutoxymonoethoxymonopropoxysilane and monomethoxymonoethoxymonopropoxymonobutoxysilane, among which tetramethoxysilane and tetraethoxysilane are preferable.
シラン化合物(ii)の具体例としては、トリメトキシシラン、トリエトキシシラン、トリプロポキシシラン、トリペンチルオキシシラン、トリフェニルオキシシラン、ジメトキシモノエトキシシラン、ジエトキシモノメトキシシラン、ジプロポキシモノメトキシシラン、ジプロポキシモノエトキシシラン、ジペンチルオキシルモノメトキシシラン、ジペンチルオキシモノエトキシシラン、ジペンチルオキシモノプロポキシシラン、ジフェニルオキシルモノメトキシシラン、ジフェニルオキシモノエトキシシラン、ジフェニルオキシモノプロポキシシラン、メトキシエトキシプロポキシシラン、モノプロポキシジメトキシシラン、モノプロポキシジエトキシシラン、モノブトキシジメトキシシラン、モノペンチルオキシジエトキシシラン、モノフェニルオキシジエトキシシラン、メチルトリメトキシシラン、メチルトリエトキシシラン、メチルトリプロポキシシラン、メチルトリペンチルオキシシラン、エチルトリメトキシシラン、エチルトリプロポキシシラン、エチルトリペンチルオキシシラン、エチルトリフェニルオキシシラン、プロピルトリメトキシシラン、プロピルトリエトキシシラン、プロピルトリペンチルオキシシラン、プロピルトリフェニルオキシシラン、ブチルトリメトキシシラン、ブチルトリエトキシシラン、ブチルトリプロポキシシラン、ブチルトリペンチルオキシシラン、ブチルトリフェニルオキシシラン、メチルモノメトキシジエトキシシラン、エチルモノメトキシジエトキシシラン、プロピルモノメトキシジエトキシシラン、ブチルモノメトキシジエトキシシラン、メチルモノメトキシジプロポキシシラン、メチルモノメトキシジペンチルオキシシラン、メチルモノメトキシジフェニルオキシシラン、エチルモノメトキシジプロポキシシラン、エチルモノメトキシジペンチルオキシシラン、エチルモノメトキシジフェニルオキシシラン、プロピルモノメトキシジプロポキシシラン、プロピルモノメトキシジペンチルオキシシラン、プロピルモノメトキシジフェニルオキシシラン、ブチルモノメトキシジブロポキシシラン、ブチルモノメトキシジペンチルオキシシラン、ブチルモノメトキシジフェニルオキシシラン、メチルメトキシエトキシプロポキシシラン、プロピルメトキシエトキシプロポキシシラン、ブチルメトキシエトキシプロポキシシラン、メチルモノメトキシモノエトキシモノブトキシシラン、エチルモノメトキシモノエトキシモノブトキシシラン、プロピルモノメトキシモノエトキシモノブトキシシラン、ブチルモノメトキシモノエトキシモノブトキシシランなどが挙げられ、中でもトリメトキシシラン、トリエトキシシラン、メチルトリメトキシシランが好ましい Specific examples of the silane compound (ii) include trimethoxysilane, triethoxysilane, tripropoxysilane, tripentyloxysilane, triphenyloxysilane, dimethoxymonoethoxysilane, diethoxymonomethoxysilane, dipropoxymonomethoxysilane, Dipropoxymonoethoxysilane, dipentyloxylmonomethoxysilane, dipentyloxymonoethoxysilane, dipentyloxymonopropoxysilane, diphenyloxylmonomethoxysilane, diphenyloxymonoethoxysilane, diphenyloxymonopropoxysilane, methoxyethoxypropoxysilane, monopropoxydimethoxy Silane, monopropoxydiethoxysilane, monobutoxydimethoxysilane, monopentyloxydiethoxysilane, Phenyloxydiethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltripropoxysilane, methyltripentyloxysilane, ethyltrimethoxysilane, ethyltripropoxysilane, ethyltripentyloxysilane, ethyltriphenyloxysilane, propyl Trimethoxysilane, propyltriethoxysilane, propyltripentyloxysilane, propyltriphenyloxysilane, butyltrimethoxysilane, butyltriethoxysilane, butyltripropoxysilane, butyltripentyloxysilane, butyltriphenyloxysilane, methylmono Methoxydiethoxysilane, ethylmonomethoxydiethoxysilane, propylmonomethoxydiethoxysilane, butylmonomethoxydiet Sisilane, methylmonomethoxydipropoxysilane, methylmonomethoxydipentyloxysilane, methylmonomethoxydiphenyloxysilane, ethylmonomethoxydipropoxysilane, ethylmonomethoxydipentyloxysilane, ethylmonomethoxydiphenyloxysilane, propylmonomethoxydipropoxysilane , Propylmonomethoxydipentyloxysilane, propylmonomethoxydiphenyloxysilane, butylmonomethoxydipropyloxysilane, butylmonomethoxydipentyloxysilane, butylmonomethoxydiphenyloxysilane, methylmethoxyethoxypropoxysilane, propylmethoxyethoxypropoxysilane, butyl Methoxyethoxypropoxysilane, methyl monomethoxymonoethoxy monobutoxy Examples include silane, ethyl monomethoxy monoethoxy monobutoxy silane, propyl monomethoxy monoethoxy monobutoxy silane, butyl monomethoxy monoethoxy monobutoxy silane, among which trimethoxy silane, triethoxy silane, methyl trimethoxy silane are preferable.
シラン化合物(iii)の具体例としては、ジメトキシシラン、ジエトキシシラン、ジプロポキシシラン、ジペンチルオキシシラン、ジフェニルオキシシラン、メトキシエトキシシラン、メトキシプロポキシシラン、メトキシペンチルオキシシラン、メトキシフェニルオキシシラン、エトキシプロポキシシラン、エトキシペンチルオキシシラン、エトキシフェニルオキシシラン、メチルジメトキシシラン、メチルメトキシエトキシシラン、メチルジエトキシシラン、メチルメトキシプロポキシシラン、メチルメトキシペンチルオキシシラン、メチルメトキシフェニルオキシシラン、エチルジプロポキシシラン、エチルメトキシプロポキシシラン、エチルジペンチルオキシシラン、エチルジフェニルオキシシラン、プロピルジメトキシシラン、プロピルメトキシエトキシシラン、プロピルエトキシプロポキシシラン、プロピルジエトキシシラン、プロピルジペンチルオキシシラン、プロピルジフェニルオキシシラン、ブチルジメトキシシラン、ブチルメトキシエトキシシラン、ブチルジエトキシシラン、ブチルエトキシプロポキシシシラン、ブチルジプロポキシシラン、ブチルメチルジペンチルオキシシラン、ブチルメチルジフェニルオキシシラン、ジメチルジメトキシシラン、ジメチルメトキシエトキシシラン、ジメチルジエトキシシラン、ジメチルジペンチルオキシシラン、ジメチルジフェニルオキシシラン、ジメチルエトキシプロポキシシラン、ジメチルジプロポキシシラン、ジエチルジメトキシシラン、ジエチルメトキシプロポキシシラン、ジエチルジエトキシシラン、ジエチルエトキシプロポキシシラン、ジプロピルジメトキシシラン、ジプロピルジエトキシシラン、ジプロピルジペンチルオキシシラン、ジプロピルジフェニルオキシシラン、ジブチルジメトキシシラン、ジブチルジエトキシシラン、ジブチルジプロポキシシラン、ジブチルメトキシペンチルオキシシラン、、ジブチルメトキシフェニルオキシシラン、メチルエチルジメトキシシラン、メチルエチルジエトキシシラン、メチルエチルジプロポキシシラン、メチルエチルジペンチルオキシシラン、メチルエチルジフェニルオキシシラン、メチルプロピルジメトキシシラン、メチルプロピルジエトキシシラン、メチルブチルジメトキシシラン、メチルブチルジエトキシシラン、メチルブチルジプロポキシシラン、メチルエチルエトキシプロポキシシラン、エチルプロピルジメトキシシラン、エチルプロピルメトキシエトキシシラン、ジプロピルジメトキシシラン、ジプロピルメトキシエトキシシラン、プロピルブチルジメトキシシラン、プロピルブチルジエトキシシラン、ジブチルメトキシエトキシシラン、ジブチルメトキシプロポキシシラン、ジブチルエトキシプロポキシシランなどが挙げられ、中でもジメトキシシラン、ジエトキシシラン、メチルジメトキシシラン、メチルジエトキシシランが好ましい。 Specific examples of the silane compound (iii) include dimethoxysilane, diethoxysilane, dipropoxysilane, dipentyloxysilane, diphenyloxysilane, methoxyethoxysilane, methoxypropoxysilane, methoxypentyloxysilane, methoxyphenyloxysilane, ethoxypropoxy. Silane, ethoxypentyloxysilane, ethoxyphenyloxysilane, methyldimethoxysilane, methylmethoxyethoxysilane, methyldiethoxysilane, methylmethoxypropoxysilane, methylmethoxypentyloxysilane, methylmethoxyphenyloxysilane, ethyldipropoxysilane, ethylmethoxy Propoxysilane, ethyldipentyloxysilane, ethyldiphenyloxysilane, propyldimethoxysilane, Propylmethoxyethoxysilane, propylethoxypropoxysilane, propyldiethoxysilane, propyldipentyloxysilane, propyldiphenyloxysilane, butyldimethoxysilane, butylmethoxyethoxysilane, butyldiethoxysilane, butylethoxypropoxysilane, butyldipropoxysilane , Butylmethyldipentyloxysilane, butylmethyldiphenyloxysilane, dimethyldimethoxysilane, dimethylmethoxyethoxysilane, dimethyldiethoxysilane, dimethyldipentyloxysilane, dimethyldiphenyloxysilane, dimethylethoxypropoxysilane, dimethyldipropoxysilane, diethyldimethoxysilane , Diethylmethoxypropoxysilane, diethyldiethoxysilane, die Luethoxypropoxysilane, dipropyldimethoxysilane, dipropyldiethoxysilane, dipropyldipentyloxysilane, dipropyldiphenyloxysilane, dibutyldimethoxysilane, dibutyldiethoxysilane, dibutyldipropoxysilane, dibutylmethoxypentyloxysilane, dibutyl Methoxyphenyloxysilane, methylethyldimethoxysilane, methylethyldiethoxysilane, methylethyldipropoxysilane, methylethyldipentyloxysilane, methylethyldiphenyloxysilane, methylpropyldimethoxysilane, methylpropyldiethoxysilane, methylbutyldimethoxysilane, Methylbutyldiethoxysilane, methylbutyldipropoxysilane, methylethylethoxypropoxysilane , Ethylpropyldimethoxysilane, ethylpropylmethoxyethoxysilane, dipropyldimethoxysilane, dipropylmethoxyethoxysilane, propylbutyldimethoxysilane, propylbutyldiethoxysilane, dibutylmethoxyethoxysilane, dibutylmethoxypropoxysilane, dibutylethoxypropoxysilane, etc. Among them, dimethoxysilane, diethoxysilane, methyldimethoxysilane, and methyldiethoxysilane are preferable.
上記反応生成物を得るのに用いるシラン化合物は、上記シラン化合物(i)〜(iii)の中から適宜選択することができる。
より好ましい組み合わせはシラン化合物(i)とシラン化合物(ii)との組み合わせである。シラン化合物(i)とシラン化合物(ii)とを用いる場合、これらの使用割合はシラン化合物(i)が5〜90モル%で、シラン化合物(ii)が95〜10モル%の範囲内が好ましく、シラン化合物(i)が10〜80モル%で、シラン化合物(ii)が90〜20モル%の範囲内がより好ましく、シラン化合物(i)が15〜75モル%で、シラン化合物(ii)が85〜25モル%の範囲内がさらに好ましい。またシラン化合物(ii)は、上記一般式(III)におけるR5がアルキル基またはフェニル基、好ましくはアルキル基であるものがより好ましい。
The silane compound used to obtain the reaction product can be appropriately selected from the silane compounds (i) to (iii).
A more preferred combination is a combination of a silane compound (i) and a silane compound (ii). When the silane compound (i) and the silane compound (ii) are used, these silane compounds (i) are preferably used in a range of 5 to 90 mol% and the silane compound (ii) in a range of 95 to 10 mol%. More preferably, the silane compound (i) is 10 to 80 mol%, the silane compound (ii) is more preferably 90 to 20 mol%, the silane compound (i) is 15 to 75 mol%, and the silane compound (ii). Is more preferably in the range of 85 to 25 mol%. The silane compound (ii) is more preferably one in which R 5 in the general formula (III) is an alkyl group or a phenyl group, preferably an alkyl group.
上記反応生成物は、例えば、上記シラン化合物(i)〜(iii)の中から選ばれる1種以上を、酸触媒、水、有機溶剤の存在下で加水分解、縮合反応せしめる方法で調製することができる。 The reaction product is prepared by, for example, a method in which one or more selected from the silane compounds (i) to (iii) are hydrolyzed and condensed in the presence of an acid catalyst, water, and an organic solvent. Can do.
上記酸触媒は有機酸、無機酸のいずれも使用できる。
無機酸としては、硫酸、リン酸、硝酸、塩酸などが使用でき、中でも、リン酸、硝酸が好適である。
上記有機酸としては、ギ酸、シュウ酸、フマル酸、マレイン酸、氷酢酸、無水酢酸、プロピオン酸、n−酪酸などのカルボン酸及び硫黄含有酸残基をもつ有機酸が用いられる。上記硫黄含有酸残基をもつ有機酸としては、有機スルホン酸が挙げられ、それらのエステル化物としては有機硫酸エステル、有機亜硫酸エステルなどが挙げられる。これらの中で、特に有機スルホン酸、例えば、下記一般式(V)で表わされる化合物が好ましい。
As the acid catalyst, either an organic acid or an inorganic acid can be used.
As the inorganic acid, sulfuric acid, phosphoric acid, nitric acid, hydrochloric acid and the like can be used, among which phosphoric acid and nitric acid are preferable.
Examples of the organic acid include carboxylic acids such as formic acid, oxalic acid, fumaric acid, maleic acid, glacial acetic acid, acetic anhydride, propionic acid, and n-butyric acid, and organic acids having sulfur-containing acid residues. Examples of the organic acid having a sulfur-containing acid residue include organic sulfonic acids, and examples of esterified products thereof include organic sulfates and organic sulfites. Among these, organic sulfonic acids, for example, compounds represented by the following general formula (V) are particularly preferable.
R13−X …(V)
(式中、R13は、置換基を有していてもよい炭化水素基、Xはスルホン酸基である。)
R 13 -X (V)
(In the formula, R 13 is a hydrocarbon group which may have a substituent, and X is a sulfonic acid group.)
上記一般式(V)において、R13としての炭化水素基は、炭素数1〜20の炭化水素基が好ましく、この炭化水素基は飽和のものでも、不飽和のものでもよいし、直鎖状、枝分かれ状、環状のいずれであってもよい。
R13の炭化水素基が環状の場合、例えばフェニル基、ナフチル基、アントリル基などの芳香族炭化水素基がよく、中でもフェニル基が好ましい。この芳香族炭化水素基における芳香環には置換基として炭素数1〜20の炭化水素基が1個又は複数個結合していてもよい。該芳香環上の置換基としての炭化水素基は飽和のものでも、不飽和のものでもよいし、直鎖状、枝分かれ状、環状のいずれであってもよい。
また、R13としての炭化水素基は1個又は複数個の置換基を有していてもよく、該置換基としては、例えばフッ素原子等のハロゲン原子、スルホン酸基、カルボキシル基、水酸基、アミノ基、シアノ基などが挙げられる。
上記一般式(V)で表わされる有機スルホン酸としては、レジストパターン下部の形状改善効果の点から、特にノナフルオロブタンスルホン酸、メタンスルホン酸、トリフルオロメタンスルホン酸、ドデシルベンゼンスルホン酸又はこれらの混合物などが好ましい。
In the general formula (V), the hydrocarbon group as R 13 is preferably a hydrocarbon group having 1 to 20 carbon atoms. The hydrocarbon group may be saturated or unsaturated, or linear. , May be branched or cyclic.
When the hydrocarbon group of R 13 is cyclic, for example, an aromatic hydrocarbon group such as a phenyl group, a naphthyl group, and an anthryl group is preferable, and among them, a phenyl group is preferable. One or more hydrocarbon groups having 1 to 20 carbon atoms may be bonded to the aromatic ring in the aromatic hydrocarbon group as a substituent. The hydrocarbon group as a substituent on the aromatic ring may be saturated or unsaturated, and may be linear, branched or cyclic.
Further, the hydrocarbon group as R 13 may have one or more substituents, and examples of the substituent include halogen atoms such as fluorine atoms, sulfonic acid groups, carboxyl groups, hydroxyl groups, amino Group, cyano group and the like.
The organic sulfonic acid represented by the general formula (V) is particularly nonafluorobutanesulfonic acid, methanesulfonic acid, trifluoromethanesulfonic acid, dodecylbenzenesulfonic acid or a mixture thereof from the viewpoint of the effect of improving the shape of the lower part of the resist pattern. Etc. are preferable.
上記酸触媒は、水の存在下でシラン化合物を加水分解するときの触媒として作用するが、使用する酸触媒の量は、加水分解反応の反応系中の濃度が1〜1000ppm、特に5〜800ppmの範囲になるように調製するのがよい。
水の添加量は、これによってシロキサンポリマーの加水分解率が変わるので、得ようとする加水分解率に応じて決められる。
本明細書におけるシロキサンポリマーの加水分解率とは、該シロキサンポリマーを合成するための加水分解反応の反応系中に存在する、シラン化合物中のアルコキシ基の数(モル数)に対する水分子の数(モル数)の割合(単位:%)である。
本発明において、シロキサンポリマーの加水分解率は50〜200%が好ましく、より好ましい範囲は75〜180%である。該加水分解率を上記範囲の下限値以上とすることによりシリカ系被膜における良好な膜質が安定して得られる。上記範囲の下限値以下とすることによりシリカ系被膜形成用塗布液の保存安定性が良好となる。
The acid catalyst acts as a catalyst when the silane compound is hydrolyzed in the presence of water. The amount of the acid catalyst used is 1 to 1000 ppm, particularly 5 to 800 ppm, in the reaction system of the hydrolysis reaction. It is good to prepare so that it may become the range of.
The amount of water added is determined according to the hydrolysis rate to be obtained because the hydrolysis rate of the siloxane polymer changes accordingly.
In this specification, the hydrolysis rate of the siloxane polymer refers to the number of water molecules relative to the number of alkoxy groups (in moles) in the silane compound present in the reaction system of the hydrolysis reaction for synthesizing the siloxane polymer ( The number of moles) (unit:%).
In the present invention, the hydrolysis rate of the siloxane polymer is preferably 50 to 200%, and more preferably 75 to 180%. By setting the hydrolysis rate to be equal to or higher than the lower limit of the above range, good film quality in the silica-based film can be stably obtained. By making it below the lower limit of the above range, the storage stability of the coating liquid for forming a silica-based film is improved.
加水分解反応の反応系における有機溶剤は、例えばメタノール、エタノール、プロパノール、n−ブタノールのような一価アルコール、メチル−3−メトキシプロピオネート、エチル−3−エトキシプロピオネートのようなアルキルカルボン酸エステル、エチレングリコール、ジエチレングリコール、プロピレングリコール、グリセリン、トリメチロールプロパン、ヘキサントリオール等の多価アルコール、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノプロピルエーテル、エチレングリコールモノブチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノプロピルエーテル、ジエチレングリコールモノブチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、プロピレングリコールモノブチルエーテル等の多価アルコールのモノエーテル類あるいはこれらのモノアセテート類、酢酸メチル、酢酸エチル、酢酸ブチルのようなエステル類、アセトン、メチルエチルケトン、メチルイソアミルケトンのようなケトン類、エチレングリコールジメチルエーテル、エチレングリコールジエチルエーテル、エチレングリコールジプロピルエーテル、エチレングリコールジブチルエーテル、プロピレングリコールジメチルエーテル、プロピレングリコールジエチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールメチルエチルエーテルのような多価アルコールの水酸基をすべてアルキルエーテル化した多価アルコールエーテル類などが挙げられる。
上記有機溶剤は単独で用いてもよい、2種以上を組み合わせて用いてもよい。
Examples of the organic solvent in the reaction system of the hydrolysis reaction include monohydric alcohols such as methanol, ethanol, propanol, and n-butanol, and alkylcarboxylic acids such as methyl-3-methoxypropionate and ethyl-3-ethoxypropionate. Acid esters, ethylene glycol, diethylene glycol, propylene glycol, glycerin, trimethylolpropane, hexanetriol and other polyhydric alcohols, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether , Diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol mono Monoethers of polyhydric alcohols such as chill ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, or their monoacetates, such as methyl acetate, ethyl acetate, butyl acetate Esters, ketones such as acetone, methyl ethyl ketone, methyl isoamyl ketone, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dipropyl ether, ethylene glycol dibutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, And polyhydric alcohols ethers which all alkyl-etherified hydroxyl of a polyhydric alcohol such as ethylene glycol methyl ethyl ether.
The said organic solvent may be used independently and may be used in combination of 2 or more type.
本発明のシリカ系被膜形成用塗布液は、溶剤としてn−ブタノールおよびメチル−3−メトキシプロピオネートを必須の成分として含むものであるので、シロキサンポリマーを合成する反応系における有機溶剤としてn−ブタノールおよびメチル−3−メトキシプロピオネートの混合溶剤を用いることが好ましい。
n−ブタノールとメチル−3−メトキシプロピオネートの混合溶剤を用いる場合、これらの質量比(n−ブタノール/メチル−3−メトキシプロピオネート)は20/80〜80/20の範囲が好ましく、より好ましい範囲は30/70〜70/30である。
n−ブタノールとメチル−3−メトキシプロピオネートの質量比を上記範囲内とすることにより、塗布時のはじきが抑えられて塗布性が向上し、埋め込み性が向上する効果、シリカ系被膜の形成時に発生する有機ガス量が低下する効果、および塗布液の経時安定性が向上する効果が得られる。特にブタノールの量を上記範囲の下限値以上とすることにより、塗布時にはじきなどの不良が生じ難くなる。また、メチル−3−メトキシプロピオネートの量を上記範囲の下限値以上とすることにより、塗布液の保存安定性が良くなる。
Since the coating liquid for forming a silica film of the present invention contains n-butanol and methyl-3-methoxypropionate as essential components as solvents, n-butanol and organic solvents in the reaction system for synthesizing the siloxane polymer are used. It is preferable to use a mixed solvent of methyl-3-methoxypropionate.
When a mixed solvent of n-butanol and methyl-3-methoxypropionate is used, these mass ratios (n-butanol / methyl-3-methoxypropionate) are preferably in the range of 20/80 to 80/20, A more preferable range is 30/70 to 70/30.
By making the mass ratio of n-butanol and methyl-3-methoxypropionate within the above-mentioned range, the effect of improving repelling during coating and improving the coating property and improving the embedding property, the formation of a silica-based film An effect of reducing the amount of organic gas generated sometimes and an effect of improving the temporal stability of the coating solution are obtained. In particular, when the amount of butanol is not less than the lower limit of the above range, defects such as repellency are less likely to occur during application. Moreover, the storage stability of a coating liquid becomes good by making the amount of methyl-3-methoxypropionate more than the lower limit of the said range.
このような反応系で加水分解反応させることによりシロキサンポリマーが得られる。該加水分解反応は、通常5〜100時間程度で完了するが、反応時間を短縮させるには、80℃を超えない温度範囲で加熱するのがよい。 A siloxane polymer is obtained by performing a hydrolysis reaction in such a reaction system. The hydrolysis reaction is usually completed in about 5 to 100 hours, but in order to shorten the reaction time, it is preferable to heat in a temperature range not exceeding 80 ° C.
反応終了後、合成されたシロキサンポリマーと、反応に用いた有機溶剤を含む反応溶液が得られる。該反応溶液は、そのままシリカ系被膜形成用塗布液として用いることができるが、好ましい固形分濃度に調整するために、さらに希釈溶剤を加えて希釈したものをシリカ系被膜形成用塗布液とするのが好ましい。
本発明のシリカ系被膜形成用塗布液のSiO2換算濃度は特に限定されないが、1〜30質量%程度が好ましく、5〜25質量%程度がより好ましい。
After completion of the reaction, a reaction solution containing the synthesized siloxane polymer and the organic solvent used for the reaction is obtained. The reaction solution can be used as it is as a coating solution for forming a silica-based film, but in order to adjust to a preferable solid content concentration, a solution diluted with a dilution solvent is used as a coating solution for forming a silica-based film. Is preferred.
Although in terms of SiO 2 concentration of the silica-based film-forming coating liquid of the present invention is not particularly limited, but it is preferably about 1 to 30 wt%, more preferably about 5 to 25 wt%.
上記希釈溶剤としては加水分解反応における有機溶剤として上記に挙げたものの中から適宜選択して用いることが好ましいが、それ以外の一般的な有機溶剤も使用可能である。より好ましい希釈溶剤は、上記n−ブタノールとメチル−3−メトキシプロピオネートの混合溶剤である。
シリカ系被膜形成用塗布液中の溶剤には、n−ブタノールおよびメチル−3−メトキシプロピオネート以外の溶剤が、本発明の効果を損なわない範囲で含まれていてもよいが、n−ブタノールおよびメチル−3−メトキシプロピオネートの含有量の合計が、シリカ系被膜形成用塗布液中の溶剤の50質量%以上であることが好ましく、より好ましくは80質量%以上であり、さらに好ましくは98%以上であり、100質量%が最も好ましい。
The dilution solvent is preferably selected from those listed above as the organic solvent in the hydrolysis reaction, but other common organic solvents can also be used. A more preferable dilution solvent is a mixed solvent of the above n-butanol and methyl-3-methoxypropionate.
The solvent in the coating solution for forming a silica-based film may contain a solvent other than n-butanol and methyl-3-methoxypropionate as long as the effects of the present invention are not impaired. And the total content of methyl-3-methoxypropionate is preferably 50% by mass or more, more preferably 80% by mass or more, and still more preferably, of the solvent in the coating solution for forming a silica-based film. 98% or more, and 100% by mass is most preferable.
上記反応溶液を含むシリカ系被膜形成用塗布液中には、シラン化合物の加水分解反応により生成するアルコールが含まれるが、アルコールが過剰に混入した場合には減圧蒸留で除去すればよい。減圧蒸留は真空度39.9×102〜39.9×103Pa、好ましくは66.5×102〜26.6×103Pa、温度20〜50℃で2〜6時間の範囲内で行うのがよい。 The silica-based coating-forming coating solution containing the reaction solution contains alcohol produced by the hydrolysis reaction of the silane compound. If the alcohol is excessively mixed, it may be removed by distillation under reduced pressure. The vacuum distillation has a degree of vacuum of 39.9 × 10 2 to 39.9 × 10 3 Pa, preferably 66.5 × 10 2 to 26.6 × 10 3 Pa, and a temperature of 20 to 50 ° C. within a range of 2 to 6 hours. It is better to do it.
本発明のシリカ系被膜形成用塗布液は、平坦化膜や層間絶縁膜としてのシリカ系被膜を形成するのに好適に用いられる。本発明のシリカ系被膜形成用塗布液を用いてシリカ系被膜を形成する方法としては、通常のSOG法を用いることができる。 The coating liquid for forming a silica-based film of the present invention is suitably used for forming a silica-based film as a planarizing film or an interlayer insulating film. As a method of forming a silica-based film using the coating liquid for forming a silica-based film of the present invention, a normal SOG method can be used.
例えば、まず基体上にシリカ系被膜形成用塗布液を所定の膜厚となるように、回転塗布、流延塗布、ロール塗布等の塗布方法により塗布して塗膜を形成する。塗膜の厚さは適用する基体の種類により適宜選択される。
次いでホットプレート上でベークする。このときのベーク温度は、例えば80〜500℃程度であり、より好ましくは80〜300℃程度である。通常、このベークに要する時間は、10〜360秒、好ましくは90〜210秒である。ベーク処理はベーク温度を変えつつ複数段階で行ってもよい。
この後、高温で焼成することによりシリカ系被膜が得られる。焼成温度は、通常、350℃以上で行われ、350〜450℃程度が好ましい。
For example, first, a coating film is formed by applying a coating solution for forming a silica-based film on a substrate by a coating method such as spin coating, cast coating, or roll coating so as to have a predetermined film thickness. The thickness of the coating film is appropriately selected depending on the type of substrate to be applied.
It is then baked on a hot plate. The baking temperature at this time is about 80-500 degreeC, for example, More preferably, it is about 80-300 degreeC. Usually, the time required for this baking is 10 to 360 seconds, preferably 90 to 210 seconds. The baking process may be performed in a plurality of stages while changing the baking temperature.
Then, a silica-type film is obtained by baking at high temperature. The firing temperature is usually 350 ° C. or higher, preferably about 350 to 450 ° C.
本発明のシリカ系被膜形成用塗布液は基体表面の凹凸間のスペースを隙間無く埋め込む埋め込み性に優れ、平坦化膜または層間絶縁膜として良好なシリカ系被膜を形成することができる。
例えば後述の実施例に示されるように、幅0.1μmのラインアンドスペースパターン(1:1)をボイド無く埋め込むことができる程度の、優れた埋め込み性を達成することができる。
The coating solution for forming a silica-based film of the present invention is excellent in embedding ability to fill a space between irregularities on the surface of a substrate without a gap, and can form a good silica-based film as a planarizing film or an interlayer insulating film.
For example, as shown in Examples described later, it is possible to achieve excellent embeddability such that a line and space pattern (1: 1) having a width of 0.1 μm can be embedded without voids.
(実施例1)
メチルトリメトキシシラン367.7g(2.7モル)、テトラメトキシシラン411.0g(2.7モル)、n−ブタノール690.5g、メチル−3−メトキシプロピオネート690.5gを混合、撹拌した。そこに、水340.2g(19.0モル)、濃度60質量%の硝酸58.9μLを加え、さらに3時間撹拌して加水分解反応させた。加水分解率は約100%である。
その後、26℃で2日間反応させることにより、シロキサンポリマーを含む反応溶液を得た。反応溶液中のシロキサンポリマーの質量平均分子量(Mw)は1559であった。
上記反応溶液2415.2gに、希釈溶剤としてn−ブタノール388.8gおよびメチル−3−メトキシプロピオネート388.8gを混合し、シリカ系被膜形成用塗布液を得た。
Example 1
367.7 g (2.7 mol) of methyltrimethoxysilane, 411.0 g (2.7 mol) of tetramethoxysilane, 690.5 g of n-butanol and 690.5 g of methyl-3-methoxypropionate were mixed and stirred. . Thereto was added 340.2 g (19.0 mol) of water and 58.9 μL of nitric acid having a concentration of 60% by mass, and the mixture was further stirred for 3 hours to cause a hydrolysis reaction. The hydrolysis rate is about 100%.
Then, the reaction solution containing a siloxane polymer was obtained by making it react at 26 degreeC for 2 days. The mass average molecular weight (Mw) of the siloxane polymer in the reaction solution was 1559.
N-butanol 388.8g and methyl-3-methoxypropionate 388.8g were mixed with the said reaction solution 2415.2g as a diluent solvent, and the coating liquid for silica type film formation was obtained.
(埋め込み性の評価)
シリコンウェーハ上に0.1μmの1:1ラインアンドスペースパターンが形成された基体を用意した。
該基体上に、上記で得られたシリカ系被膜形成用塗布液を、スピンコートにより塗布し、ホットプレートにてベーク処理を行った。ベーク処理における加熱条件は、80℃で1分間、次いで150℃で1分間、次いで200℃で1分間の多段ベークとした。この後、空気中にて400℃で焼成してシリカ系被膜を得た。
得られたシリカ系被膜について、断面をSEM(走査型電子顕微鏡)により観察したところ、パターン間のスペース内にボイドは発生しておらず、埋め込み不良も無く、埋め込み性は良好であった。
(Evaluation of embeddability)
A substrate on which a 0.1 μm 1: 1 line and space pattern was formed on a silicon wafer was prepared.
The silica-based coating-forming coating solution obtained above was applied onto the substrate by spin coating, and baked on a hot plate. The heating conditions in the baking treatment were multi-stage baking at 80 ° C. for 1 minute, then at 150 ° C. for 1 minute, and then at 200 ° C. for 1 minute. Then, it baked at 400 degreeC in the air, and obtained the silica-type film.
When the cross section of the obtained silica-based film was observed with an SEM (scanning electron microscope), no void was generated in the space between the patterns, there was no imbedding defect, and the embedding property was good.
(実施例2)
上記実施例1において、加水分解率を変えてシリカ系被膜形成用塗布液を調製した。
すなわち、メチルトリメトキシシラン176.8g(1.3モル)、テトラメトキシシラン197.6g(1.3モル)、n−ブタノール249.0g、メチル−3−メトキシプロピオネート249.0gを混合、撹拌した。そこに、水327.6g(18.3モル)、濃度60質量%の硝酸28.3μLを加え、さらに3時間撹拌して加水分解反応させた。加水分解率は約200%である。
その後、26℃で2日間反応させることにより、シロキサンポリマーを含む反応溶液を得た。反応溶液中のシロキサンポリマーの質量平均分子量(Mw)は1741であった。
上記反応溶液150gに、希釈溶剤としてn−ブタノール24.8gおよびメチル−3−メトキシプロピオネート24.8gを混合し、シリカ系被膜形成用塗布液を得た。
(Example 2)
In the said Example 1, the hydrolysis rate was changed and the coating liquid for silica type film formation was prepared.
That is, 176.8 g (1.3 mol) of methyltrimethoxysilane, 197.6 g (1.3 mol) of tetramethoxysilane, 249.0 g of n-butanol, and 249.0 g of methyl-3-methoxypropionate were mixed. Stir. Thereto was added 327.6 g (18.3 mol) of water and 28.3 μL of nitric acid having a concentration of 60% by mass, and the mixture was further stirred for 3 hours to cause a hydrolysis reaction. The hydrolysis rate is about 200%.
Then, the reaction solution containing a siloxane polymer was obtained by making it react at 26 degreeC for 2 days. The mass average molecular weight (Mw) of the siloxane polymer in the reaction solution was 1741.
150 g of the reaction solution was mixed with 24.8 g of n-butanol and 24.8 g of methyl-3-methoxypropionate as dilution solvents to obtain a coating solution for forming a silica-based film.
得られたシリカ系被膜形成用塗布液について、実施例1と同様にして埋め込み性を評価したところ、パターン間のスペース内にボイドは発生しておらず、埋め込み不良も無く、埋め込み性は良好であった。 With respect to the obtained coating solution for forming a silica-based film, the embedding property was evaluated in the same manner as in Example 1. As a result, no void was generated in the space between patterns, there was no embedding failure, and the embedding property was good. there were.
(比較例1)
実施例2において、n−ブタノールおよびメチル−3−メトキシプロピオネートを用いず、代わりにアセトンおよびイソプロピルアルコール(IPA)を用いてシリカ系被膜形成用塗布液を調製した。
加水分解反応における加水分解率は約200%である。反応溶液中のシロキサンポリマーの質量平均分子量(Mw)は1956であった。
(Comparative Example 1)
In Example 2, a coating solution for forming a silica-based film was prepared by using acetone and isopropyl alcohol (IPA) instead of n-butanol and methyl-3-methoxypropionate.
The hydrolysis rate in the hydrolysis reaction is about 200%. The mass average molecular weight (Mw) of the siloxane polymer in the reaction solution was 1956.
得られたシリカ系被膜形成用塗布液について、実施例1と同様にして埋め込み性を評価したところ、パターン間のスペース内でボイドの発生が少量観察され、微細パターンにおける埋め込み性が劣っていた。
When the embedding property of the obtained coating solution for forming a silica-based film was evaluated in the same manner as in Example 1, a small amount of voids was observed in the space between patterns, and the embedding property in a fine pattern was inferior.
Claims (5)
上記溶剤は、n−ブタノールおよびメチル−3−メトキシプロピオネートを含有することを特徴とするシリカ系被膜形成用塗布液。 In a coating solution for forming a silica-based film containing a siloxane polymer and a solvent,
The said solvent contains n-butanol and methyl-3-methoxypropionate, The coating liquid for silica type film formation characterized by the above-mentioned.
R4−nSi(OR’)n …(I)
(式中、Rは水素原子、アルキル基またはフェニル基を表し、R’はアルキル基またはフェニル基を表し、nは2〜4の整数を表す。)
で表されるシラン化合物から選択される少なくとも1種を加水分解反応させて得られる反応生成物であることを特徴とする請求項1または2に記載のシリカ系被膜形成用塗布液。 The siloxane polymer has the following general formula (I)
R 4-n Si (OR ′) n (I)
(In the formula, R represents a hydrogen atom, an alkyl group or a phenyl group, R ′ represents an alkyl group or a phenyl group, and n represents an integer of 2 to 4.)
The coating solution for forming a silica-based film according to claim 1, wherein the coating solution is a reaction product obtained by hydrolyzing at least one selected from the silane compounds represented by formula (1).
The said siloxane polymer is 50 to 200% of hydrolysis rate, The coating liquid for silica-type film formation of any one of Claims 1-4 characterized by the above-mentioned.
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JPH10226767A (en) * | 1997-02-14 | 1998-08-25 | Mitsubishi Chem Corp | Coating liquid for forming silica film |
JPH10316935A (en) * | 1997-05-20 | 1998-12-02 | Mitsubishi Chem Corp | Coating liquid for forming silica coating film |
JP2000077410A (en) * | 1998-08-27 | 2000-03-14 | Tokyo Ohka Kogyo Co Ltd | Forming method of multilayer interconnection structure |
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2004
- 2004-09-28 JP JP2004282069A patent/JP4611701B2/en not_active Expired - Fee Related
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2005
- 2005-06-27 TW TW94121483A patent/TWI295309B/en active
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JPH0827420A (en) * | 1994-07-13 | 1996-01-30 | Sumitomo Chem Co Ltd | Coating liquid for forming silica-based insulating film |
JP2001354901A (en) * | 2000-04-10 | 2001-12-25 | Jsr Corp | Method for manufacturing composition for film formation, composition for film formation, method for forming film and silica-based film |
JP2001354903A (en) * | 2000-04-10 | 2001-12-25 | Jsr Corp | Method for manufacturing composition for film formation, composition for film formation, method for forming film and silica-based film |
JP2003253206A (en) * | 2002-02-27 | 2003-09-10 | Hitachi Chem Co Ltd | Siliceous film-forming composition, method for producing siliceous film and electronic part |
JP2004096076A (en) * | 2002-07-12 | 2004-03-25 | Tokyo Ohka Kogyo Co Ltd | Method of manufacturing silica-based organic coating film |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8551651B2 (en) | 2006-12-15 | 2013-10-08 | Tokyo Ohka Kogyo Co., Ltd. | Secondary cell having negative electrode base member |
US8927147B2 (en) | 2006-12-15 | 2015-01-06 | Kanto Gakuin School Corporation | Negative electrode base member |
US9105929B2 (en) | 2006-12-15 | 2015-08-11 | Tokyo Ohka Kogyo Co., Ltd. | Negative electrode base member |
Also Published As
Publication number | Publication date |
---|---|
CN1754930A (en) | 2006-04-05 |
CN100432173C (en) | 2008-11-12 |
TWI295309B (en) | 2008-04-01 |
JP4611701B2 (en) | 2011-01-12 |
TW200610787A (en) | 2006-04-01 |
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