JP2006093113A5 - - Google Patents
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- JP2006093113A5 JP2006093113A5 JP2005234103A JP2005234103A JP2006093113A5 JP 2006093113 A5 JP2006093113 A5 JP 2006093113A5 JP 2005234103 A JP2005234103 A JP 2005234103A JP 2005234103 A JP2005234103 A JP 2005234103A JP 2006093113 A5 JP2006093113 A5 JP 2006093113A5
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- molecular weight
- double bond
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Claims (9)
前記第１の化合物が付加反応により環状の構造を形成することによって生成された第２の化合物を含む第２の層とを有し、
第１の層と第２の層とが積層していることを特徴とする電子デバイス。 A first layer comprising a first compound comprising a conjugated double bond and having a molecular weight of 100 to 1000;
A second layer containing a second compound produced by the first compound forming a cyclic structure by an addition reaction;
An electronic device, wherein a first layer and a second layer are stacked.
前記第１の層は、共役二重結合を含み分子量１００〜１０００である第１の化合物を含み、
前記第２の層は、付加反応により前記第１の化合物が環状の構造を形成することによって生成された第２の化合物を含むことを特徴とする発光素子。 Having a first layer and a second layer between the first electrode and the second electrode;
The first layer includes a first compound having a conjugated double bond and a molecular weight of 100 to 1000,
The light-emitting element, wherein the second layer includes a second compound generated by the first compound forming a cyclic structure by an addition reaction.
前記第１の半導体層は、共役二重結合を含み分子量１００〜１０００である第１の化合物を含み、
前記第２の半導体層は、付加反応により前記第１の化合物が環状の構造を形成することによって生成された第２の化合物を含み、
前記第３の半導体層は、第１の半導体層と優先的に輸送されるキャリアの極性が異なることを特徴とする半導体素子。 Having a second semiconductor layer between the first semiconductor layer and the third semiconductor layer;
The first semiconductor layer includes a first compound having a conjugated double bond and a molecular weight of 100 to 1000,
The second semiconductor layer includes a second compound generated by the addition reaction of the first compound forming a cyclic structure ,
The semiconductor element, wherein the third semiconductor layer is different in polarity of carriers transported preferentially from the first semiconductor layer.
前記発光素子は、
共役二重結合を含み分子量１００〜１０００である第１の化合物を含む第１の層と、
前記第１の化合物が付加反応により環状の構造を形成することによって生成された第２の化合物を含む第２の層とを有し、
第１の層と第２の層とが積層していることを特徴とする発光装置。 Having a plurality of light emitting elements arranged;
The light emitting element is
A first layer comprising a first compound comprising a conjugated double bond and having a molecular weight of 100 to 1000;
A second layer containing a second compound produced by the first compound forming a cyclic structure by an addition reaction;
A light-emitting device in which a first layer and a second layer are stacked.
前記化合物について［２＋２］環化付加反応が生じるように前記層に光を照射する第２の工程と、を含むことを特徴とする電子デバイスの作製方法。 A first step of forming a layer containing a compound having a conjugated double bond and a molecular weight of 100 to 1000;
And a second step of irradiating the layer with light so that a [2 + 2] cycloaddition reaction occurs with respect to the compound.
前記化合物について［２＋２］環化付加反応が生じるように前記第１の層の上に光を照射し第２の層を形成する第２の工程と、
前記第２の層の上に第３の層を形成する第３の工程と、を含むことを特徴とする電子デバイスの作製方法。 Forming a first layer containing a compound having a conjugated double bond and a molecular weight of 100 to 1000;
A second step of irradiating light on the first layer to form a second layer so that a [2 + 2] cycloaddition reaction occurs for the compound;
And a third step of forming a third layer on the second layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005234103A JP4836513B2 (en) | 2004-08-23 | 2005-08-12 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, LIGHTING EQUIPMENT, ELECTRONIC DEVICE, AND SEMICONDUCTOR ELEMENT |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004242869 | 2004-08-23 | ||
| JP2004242869 | 2004-08-23 | ||
| JP2005234103A JP4836513B2 (en) | 2004-08-23 | 2005-08-12 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, LIGHTING EQUIPMENT, ELECTRONIC DEVICE, AND SEMICONDUCTOR ELEMENT |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006093113A JP2006093113A (en) | 2006-04-06 |
| JP2006093113A5 true JP2006093113A5 (en) | 2008-09-18 |
| JP4836513B2 JP4836513B2 (en) | 2011-12-14 |
Family
ID=36233852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005234103A Expired - Fee Related JP4836513B2 (en) | 2004-08-23 | 2005-08-12 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, LIGHTING EQUIPMENT, ELECTRONIC DEVICE, AND SEMICONDUCTOR ELEMENT |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4836513B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100103623A (en) * | 2007-12-27 | 2010-09-27 | 소니 주식회사 | Thin film semiconductor device and field effect transistor |
| JP6286644B2 (en) * | 2014-05-30 | 2018-03-07 | 東海光学株式会社 | Coating agent for slippage prevention |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60213951A (en) * | 1984-04-10 | 1985-10-26 | Meidensha Electric Mfg Co Ltd | Photoconductive composition |
| JPH04100066A (en) * | 1990-08-20 | 1992-04-02 | Konica Corp | Image forming method |
| DE4325885A1 (en) * | 1993-08-02 | 1995-02-09 | Basf Ag | Electroluminescent arrangement |
| JPH08146628A (en) * | 1994-11-22 | 1996-06-07 | Mita Ind Co Ltd | Electrophotographic photoreceptor |
| EP1715020A3 (en) * | 1994-12-28 | 2007-08-29 | Cambridge Display Technology Limited | Polymers for use in optical devices |
| JP2003315523A (en) * | 2002-04-25 | 2003-11-06 | Ricoh Co Ltd | Diffraction optical element and method for manufacturing the same, optical pickup device and optical disk driving device |
-
2005
- 2005-08-12 JP JP2005234103A patent/JP4836513B2/en not_active Expired - Fee Related
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