JP2006080549A - Semiconductor memory device and semiconductor integrated circuit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which makes stable operation possible. <P>SOLUTION: A semiconductor memory device according to the invention is formed by isolating by an insulating layer 6 an FBC1 from a peripheral circuit 4 having an NFET2 and a PFET3 on an SOI substrate 5. The SOI substrate 5 comprises an N diffusion layer 8 formed on an N substrate 7, a P diffusion layer 9 formed on a part of the N diffusion layer 8, and a buried oxide film 10 of the shape of a thin film formed on the top surfaces of the N diffusion layer 8 and the P diffusion layer 9. In order to arrange an N diffusion layer 14 under the PFET3 and a P diffusion layer 12 under the NFET2, the back channels of the NFET2 and the PFET3 can certainly be turned off. The peripheral circuit 4 can also be stably operated when the FBC 1 is arranged on a PD-SOI in which the buried oxide 10 is thin. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor memory device and a semiconductor integrated circuit, and more particularly to an FBC (Floating Body Cell) memory that stores information by accumulating majority carriers in a floating body of a field effect transistor (FET).

  A conventional DRAM cell having one transistor and one capacitor having a trench capacitor or a stacked capacitor becomes difficult to manufacture as the size of the DRAM cell decreases. There are concerns. As a memory cell that can replace such a DRAM cell, a new memory cell FBC that stores information by accumulating majority carriers in a floating channel body of an FET formed on a silicon on insulator (SOI) or the like has been proposed. (See Patent Documents 1 and 2).

  The FBC has a main gate for forming a channel on the upper surface side of the channel body and an auxiliary gate formed so as to be capacitively coupled to the lower surface side.

  As this memory cell, there are a memory cell formed on a partially depleted SOI (PD-SOI) (see Patent Documents 1 and 2) and a memory cell formed on a fully depleted SOI (FD-SOI) (see Patent Document 3). is there. The latter is an FBC that can cope with the situation where the miniaturization of transistors has progressed and the thickness of SOI silicon has become thinner.

  FBC generally requires a fixed capacity in the channel body in order to secure the amount of memory signal, but one option is to reduce the thickness of the buried oxide film (BOX) between the channel body and the substrate. is there. At this time, the substrate potential directly under the FBC cell array is required to be a negative potential so that holes can be accumulated in the channel body.

JP 2003-68877 A JP2002-246571 JP 2003-31693 A

  However, when the substrate potential under the transistors in the peripheral circuit, particularly the peripheral PFET, also becomes negative, there is a problem that the back channel of the PFET is turned on because the buried oxide film is thin, preventing normal transistor operation.

  On the other hand, when an FBC is formed on an FD-SOI, it has been unclear how to design a transistor of a logic circuit when a memory peripheral circuit and an FBC memory are mixedly mounted.

  In particular, when both P-type FET (PFET) and N-type FET (NFET) are formed on ultra-thin silicon and the substrate voltage is set to 0 V as is normally done, the threshold of the N-type polysilicon gate PFET The absolute value of the value voltage is too high, and the NFET becomes a depletion type (field effect transistor having a negative threshold voltage), which is not practical. In addition, since these threshold voltages change depending on the silicon film thickness, in the case of ultra-thin silicon, a subtle change in the thickness results in a large threshold voltage change, which ensures stable device operation. There is also the problem of obstructing.

  The present invention has been made in view of these points, and an object of the present invention is to provide a semiconductor memory device and a semiconductor integrated circuit capable of stable operation.

  In order to solve the above-described problems, the present invention provides a first semiconductor layer formed on a substrate via a buried insulating film, a floating channel body formed in the first semiconductor layer, and the channel body. A FBC (Floating Body) having a main gate for forming a channel on the first surface side and an auxiliary gate formed so as to be capacitively coupled to the second surface opposite to the first surface Cell) and a logic circuit which is formed in the first semiconductor layer by being separated from the FBC by an insulating film, and transmits and receives signals to and from the FBC, and is located below the FBC and along the lower surface of the buried insulating film A second semiconductor layer formed under the logic circuit, and a third semiconductor layer formed along a lower surface of the buried insulating film, wherein the second and third semiconductor layers include: Different potentials are set.

  The present invention also provides a first semiconductor layer formed on a substrate via a buried insulating film, a floating channel body formed in the first semiconductor layer, and a first surface side of the channel body. An FBC (Floating Body Cell) having a main gate for forming a channel, an auxiliary gate formed so as to be capacitively coupled to the second surface opposite to the first surface, and an insulating film A logic circuit that is formed in the first semiconductor layer separately from the FBC and transmits / receives a signal to / from the FBC, and is lower than the thickness of the buried oxide film below the FBC. The buried oxide film is increased in thickness.

  The present invention also provides a first semiconductor layer formed on a substrate via a buried insulating film, a floating channel body formed in the first semiconductor layer, and a first surface side of the channel body. An FBC (Floating Body Cell) having a main gate for forming a channel, an auxiliary gate formed so as to be capacitively coupled to the second surface opposite to the first surface, and an insulating film A logic circuit that is formed in the first semiconductor layer separately from the FBC and transmits / receives signals to / from the FBC, and is separated into the buried insulating film corresponding to each of the FBC and the logic circuit. A plurality of polysilicon layers or metal layers.

  The present invention also provides a first semiconductor layer formed on a substrate via a buried insulating film, a CMOS circuit comprising a PMOSFET and an NMOSFET formed separately from each other in the first semiconductor layer, A second semiconductor layer located below and formed along the lower surface of the buried insulating film, and located below the NMOSFET and separated from the second semiconductor layer along the lower surface of the buried insulating film A third semiconductor layer formed, and the second and third semiconductor layers are set to different potentials so that the back gates of the PMOSFET and the NMOSFET are not turned on.

  As described above in detail, according to the present invention, since the separate semiconductor layers are provided corresponding to the FBC and the logic circuit, the peripheral circuit can be stably operated.

  In addition, according to the present invention, a separate semiconductor layer is provided corresponding to each of the PMOSFET and the NMOSFET so that the back gates of the PMOSFET and the NMOSFET constituting the CMOS circuit are not turned on, thereby enabling a stable operation of the CMOS circuit. Become.

  Hereinafter, a semiconductor memory device and a semiconductor integrated circuit according to the present invention will be specifically described with reference to the drawings.

(First embodiment)
FIG. 1 is a cross-sectional view of a first embodiment of a semiconductor memory device according to the present invention. The semiconductor memory device of FIG. 1 includes an FBC (Floating Body Cell) 1 and a peripheral circuit 4 having an N-type MOSFET (hereinafter referred to as NFET) 2 and a P-type MOSFET (hereinafter referred to as PFET) 3 that are partially depleted. It is formed on an SOI (Silicon On Insulator) substrate 5 by being separated by an insulating layer 6.

  The SOI substrate 5 includes an N diffusion layer 8 formed on an N-type silicon substrate (N substrate) 7, a P diffusion layer 9 formed on a part of the N diffusion layer 8, the N diffusion layer 8 and the P diffusion layer. 9 and a thin-film buried oxide film 10 formed on the upper surface. On the upper surface of the buried oxide film 10, the above-described FBC1, NFET2, and PFET3 are formed.

  The P diffusion layer 9 is formed below the FBC 1 and the NFET 2. The potential of the N substrate 7 and the N diffusion layer 8 is Vsub = 2V, and the potential of the P diffusion layer 9 is set to VPL = −1V.

  On the other hand, FIG. 2 is a diagram showing a cross-sectional structure of a semiconductor memory device on a partially depleted SOI in which an N diffusion layer 11 is formed below the FBC 1 and a P diffusion layer 12 is formed below the NFET 2 and the PFET 3. The N diffusion layer 11 is formed in a part of the P diffusion layer 12. In the semiconductor memory device of FIG. 2, the potential of the P substrate 13 and the P diffusion layer 12 on the lower surface of the P diffusion layer 12 is set to Vsub = -1V, and the potential of the N diffusion layer 8 is set to VPL = -1V.

  In the case of FIG. 2, since the P diffusion layer 12 has a negative potential, the back channel of the PFET 3 constituting a part of the peripheral circuit 4 may be turned on to cause a malfunction.

  On the other hand, in the semiconductor memory device of FIG. 1, the P diffusion layer 9 is disposed below the FBC 1 and the NFET 2, the N diffusion layer 8 is disposed below the PFET 3, the P diffusion layer 9 is set to 0V, and N Since the diffusion layer 8 is set to 2 V, there is no possibility that the back channel of the NFET 2 or PFET 3 is turned on, and no malfunction occurs.

  FIG. 3 is a cross-sectional view of a semiconductor memory device having a structure different from that of FIG. In the semiconductor memory device on the partially depleted SOI shown in FIG. 3, separate N diffusion layers 11 and 14 are disposed below the FBC 1 and the PFET 3, respectively. The N diffusion layers 11 and 14 are formed separately from each other in a part of the P diffusion layer 12 formed on the P substrate 13. The potential of the N diffusion layer 11 below the FBC 1 is set to VPL = −1V, and the potential of the N diffusion layer 14 below the PFET 3 is set to VPL = 2V.

  Also in the semiconductor memory device of FIG. 3, there is no possibility that the back channels of the PFET 3 and the NFET 2 are turned on.

  4 is a cross-sectional view of a semiconductor memory device on a partially depleted SOI having a structure different from that of FIG. In the semiconductor memory device of FIG. 4, separate N diffusion layers 11, 15, and 14 are disposed below the FBC 1, the NFET 2, and the PFET 3, respectively. These N diffusion layers 11, 15, and 14 are formed separately from each other on the P substrate 13, and the N diffusion layers 11, 15, and 14 are set to different potentials. The potential of the N diffusion layer 11 below the FBC 1 is set to VPL = −1V, the potential of the N diffusion layer 15 below the NFET 2 is set to VPL = 0V, and the potential of the N diffusion layer 14 below the PFET 3 is VPL = The potential of the P substrate 13 is set to Vsub = −1V.

  Also in the semiconductor memory device of FIG. 4, there is no possibility that the back channels of the PFET 3 and the NFET 2 are turned on.

  In FIG. 4, even when the P substrate 13 is replaced with the N substrate 7 and the N diffusion layers 11, 14 and 15 are replaced with the P diffusion layers, the same effect can be obtained. In this case, the potential of the P diffusion layer may be set to 1V higher than that in FIG. 4 and the potential of the N substrate 7 may be set to 3V.

  In the following, a fully depleted SOI with a thin silicon layer on the surface will be described.

FIG. 5 is a diagram showing a simulation result of characteristics of FD-FBC (fully-deficient FBC) formed of NFET. In FIG. 5, L = 0.07 μm, tox = 50 mm (= 5 × 10 ⁻⁷ cm), tsi = 100 mm (= 10 ⁻⁶ cm), tBOX = 100 mm (= 10 ⁻⁶ cm), P type in the channel body The impurity concentration NA is 1.0 × 10 ¹⁵ cm, and the gate material is N-type polysilicon.

From the simulation result of FIG. 5, in order to increase the difference ΔVth between the threshold voltage Vth0 of the FBC1 storing “0” data and the threshold voltage Vth1 of the FBC1 storing “1” data, It is appropriate to apply a voltage of about the substrate voltage Vsub = −2V to the N diffusion layer which is present at the interface of the oxide film 10 and is doped to 1.0 × 10 ¹⁹ cm ⁻³ to reduce the resistance.

FIG. 6 is a diagram showing a simulation result of the N-type polysilicon gate NFET of the peripheral circuit 4 formed on the FD-SOI. In FIG. 6, L = 0.15 μm, t _ox = 50 mm (= 5 × 10 ⁻⁷ cm), t _Si = 100 mm (= 10 ⁻⁶ cm), t _BOX = 100 mm (= 10 ⁻⁶ cm), N _A = 1.0 × 10 ¹⁵ cm ^-3 is assumed.

As in FIG. 5, FIG. 6 shows an L diffusion layer having an N diffusion layer doped at 1.0 × 10 ¹⁹ cm ⁻³ to reduce resistance at the interface between the silicon substrate and the buried oxide film 10 (BOX). = 0.15 μm and W = 10 μm The relationship between the threshold voltage Vth and the substrate voltage Vsub of the NFET is shown. When V _sub = 0V, the transistor is a depletion type (threshold voltage is negative) and cannot be used. Therefore, in order to set a preferable value of V _th = 0.4 to 0.5 V, it is necessary to set V _sub = about -1.0 to -1.2 V.

  When a thin film transistor on SOI is used as the peripheral transistor, attention should be paid to the hysteresis phenomenon of drain current in addition to the absolute value of the threshold voltage itself.

  Even when a transistor is formed on a PD-SOI where the silicon film is thick or the channel body has a high impurity concentration, such a drain current history phenomenon is observed, but in the case of PD-SOI, the hysteresis phenomenon is observed. In order to prevent this, it is only necessary to provide a contact for fixing the potential of the channel body.

On the other hand, it is said that the transistor on the FD-SOI does not have a hysteresis phenomenon as seen in the transistor on the PD-SOI. However, depending on the value of the substrate potential V _sub , the buried oxide film 10 and the substrate Since a large number of carriers may accumulate at the interface, a hysteresis phenomenon may occur.

  However, in the transistor on the FD-SOI, the channel body cannot be contacted as in the case of the PD-SOI in order to prevent the hysteresis phenomenon. This is because there is no charge neutral area in the channel body.

  Therefore, when changing the substrate potential in order to adjust the threshold voltage of the transistor formed on the FD-SOI, it is necessary to check whether the drain current history phenomenon occurs at that substrate potential. come.

  7 to 10 are diagrams showing the presence or absence of a hysteresis phenomenon when the drain current of the NFET 2 having the same structure as above is increased from 0V to 1.5V and then returned to 0V. 7 shows the history phenomenon when Vsub = 0V, FIG. 8 shows the case of Vsub = −1.0V, FIG. 9 shows the case of Vsub = −1.5V, and FIG. 10 shows the history phenomenon when Vsub = −2V.

From these figures, it can be seen that when the substrate potential is made deeper than Vsub = −1.5 V, a hysteresis phenomenon occurs and the transistor characteristics become unstable. Therefore, in the above threshold voltage setting (V _th = 0.4 to 0.5 V), V _sub = -1.0 to -1.2 V, but in this range, the transistor should operate stably without showing any hysteresis phenomenon. I understand.

FIG. 11 is a diagram showing simulation results of characteristics of the N-type polysilicon gate PFET 3 and the P-type polysilicon gate PFET 3 of the peripheral circuit 4 formed on the FD-SOI. In FIG. 11, L = 0.2 μm, t _ox = 50 mm (= 5 × 10 ⁻⁷ cm), t _Si = 100 mm (= 10 ⁻⁶ cm), t _BOX = 100 mm (= 10 ⁻⁶ cm), N _D ( N-type impurity concentration in the channel body) = 5.0 × 10 ¹⁶ cm ⁻³ is assumed. Similar to the FBC 1, an N-type diffusion layer doped to 1.0 × 10 ¹⁹ cm ⁻³ is provided at the interface between the silicon substrate and the buried oxide film 10 (BOX) to reduce resistance.

FIG. 11 shows the dependence of the threshold voltage of the PFET 3 of the peripheral circuit 4 on the substrate voltage V _{sub. In} the case of the N-type polysilicon gate PFET 3, the threshold voltage is −1.2 V when V _sub = 0V. It is too expensive to use. On the other hand, in the case of the P-type polysilicon gate PFET 3, it can be seen that the value of Vth is appropriate in the positive direction from Vsub = 0. It should be noted that Vsub = 0 indicates the source potential of the PFET 3 (the one of the source and drain having the higher potential).

  In the case of the PFET 3, there is a risk of causing a history phenomenon of the drain current as in the case of the NFET 2. Therefore, it is necessary to confirm that the history phenomenon does not occur in the set substrate potential range.

  12 to 15 are diagrams showing the presence or absence of the hysteresis phenomenon of the PFET 3. FIG. 12 shows a case where Vsub = −1V, FIG. 13 shows a case where Vsub = 0V, FIG. 14 shows a case where Vsub = 1V, and FIG. = 2V is shown.

  As shown in FIGS. 12 to 15, since the PFET 3 having this structure causes a hysteresis phenomenon only when Vsub> 1V, Vsub is set when the threshold voltage of the P-type polysilicon PFET3 is set (Vth = −0.7 to −0.3V). Although ≧ 0, when Vsub = 0 to 1V, it can be seen that the transistor operates stably without exhibiting a hysteresis phenomenon within this range.

  When the optimum reference potentials of FBC1, NFET2, and PFET3 are obtained by the above procedure, a substrate configuration as shown in FIG. 16 is considered in order to apply these reference voltages to SOI transistors on the same substrate.

  In the semiconductor memory device of FIG. 16, N diffusion layers 11, 15, and 14 for lowering resistance are formed at the boundary between the substrate and the buried oxide film 10 below the respective regions of FBC1, NFET2, and PFET3. The N diffusion layers 11, 15, and 14 are separated from each other. These N diffusion layers 11, 15, and 14 are supplied with the optimum substrate potential described above, in this case, the plate potential VPL.

  In FIG. 16, the N diffusion layer under FBC1 is set to VPL = -2V, the N diffusion layer under NFET2 is set to VPL = -1V, and the N diffusion layer under PFET3 is set to VPL = 2.5V. The P-type substrate is set to the lowest value among these potentials in order to prevent a large current from flowing due to the forward direction of the PN junction. In this case, Vsub = -2V is set. With this setting, all the PN junctions existing between the substrate and the N diffusion layer are biased in the reverse direction, and a large current does not flow.

  FIG. 17 is a layout diagram of a silicon chip comprising the SOI substrate 5. The gray regions in FIG. 17 are regions of the N diffusion layers 11, 15, 14 formed under the buried oxide film 10. There are four FBC1 regions in the center, and VPL = -2V is applied to these regions. NFET 2 and PFET 3 regions are formed in stripes at three locations between these FBC 1 regions, and VPL = -1V and VPL = 2.5V are applied, respectively. An NFET 2 region and a PFET 3 region are formed so as to surround the cell array.

  FIG. 18 is a cross-sectional view showing a connection portion between the N diffusion layer 11 and the wiring layer 16. As shown in the figure, a wiring layer 16 is formed on the SOI substrate 5, and the wiring layer 16 and the N diffusion layer 11 are connected from the surface of the SOI substrate 5 by a contact 18 penetrating the buried oxide film 10.

  The plate potential VPL applied to the N diffusion layer 11 is (1) when applied from the outside of the chip, (2) when it is a fixed value generated within the chip, and (3) adjusted to an appropriate value during die sorting. When a mechanism that can program the value is incorporated, there are four cases: (4) automatic adjustment within the chip.

  In the case of (1) above, as shown in FIG. 19, the corresponding plate voltage VPL is inputted from the pad 1919 corresponding to each N diffusion layer.

  FIG. 20 is a circuit diagram in the case of (2) above. This circuit shows a circuit corresponding to the NFET 2 region when VPL is lower than GND. The circuit in FIG. 20 includes an operational amplifier 20, an oscillator 21, a capacitor C1, diodes D1 and D2, and resistors R and r connected in series. The diodes D1 and D2 are connected in cascade between GND and VPL. The capacitor C 1 is connected between the output of the oscillator 21 and the diodes D 1 and D 2, and the voltage at the connection point of the resistors R and r is connected to the positive input terminal of the operational amplifier 20. When VPL is higher than Vcc = 2.0 V, that is, the circuit diagram corresponding to the PFET 3 region is as shown in FIG.

  FIG. 22 is a circuit diagram showing a detailed configuration of the oscillator 21 shown in FIGS. This is a ring oscillator 21 having a CMOS configuration in which an odd number of inverters IV1 to IV5 each composed of a PMOS transistor and an NMOS transistor are connected in cascade, and the output of the final stage inverter IV5 is fed back to the input of the first stage inverter IV1. An NMOS transistor Q1 is connected between the NMOS transistor of the first-stage inverter IV1 and the ground terminal. Oscillation / stop of the ring oscillator 21 is controlled by an Enable signal input to the gate of the NMOS transistor.

  FIG. 23 is a circuit diagram corresponding to FIG. 20 in the case of (3) above. The circuit in FIG. 23 includes an operational amplifier 20, an oscillator 21, a capacitor C1, diodes D1 and D2, resistors r1 to r4 and R, and fuse elements f1 to f4. The series-connected fuse element f1 and resistor r1, fuse element f2 and resistor r2, fuse element f3 and resistor r3, fuse element f4 and resistor r4 are connected in parallel, and one end of each of the fuse elements f1 to f4 is a resistor R. And one ends of the resistors r1 to r4 are connected to VPL.

  VPL can be adjusted according to equation (1) by fusing fuse elements f1-f4 with a laser and selecting resistors r1-r4 as necessary.

VPL = {(R + r) VREF-rVcc} / R (1)
In the formula (1), r is a combined resistance when at least one of the resistors r1 to r4 is selected.

  24 and 25 are circuit diagrams in the case of (4) above, FIG. 24 is a circuit diagram corresponding to FBC1 and NFET2, and FIG. 25 is a circuit diagram corresponding to PFET3.

  Each of FIG. 24 and FIG. 25 includes an operational amplifier 20, an oscillator 21, a capacitor c1, diodes D1 and D2, and a resistor γ. VPL is input to the plate of FBC1 or NFET2 in FIG. 24, and VPL is input to the plate of PFET3 in FIG.

  24 and 25, the threshold voltage of each transistor is monitored by inputting VPL to the plate, and VPL itself is changed by the threshold voltage.

  As a result, even if the silicon film thickness tsi and the gate insulating film tox change from chip to chip and the threshold voltage deviates from the design value, the feedback loop works and can be automatically set to the design value.

  It is desirable that the MOSFET plate in the feedback loop be isolated from the others. This is because the plate capacity is too large and the time constant of the feedback loop is too large, so that it takes too much time to reach an appropriate set value and an oscillation phenomenon easily occurs. In the case of FD-SOI with a thin silicon layer, this adjustment function is very important because the variation between the wafers in the thickness tSi of the silicon layer has a great influence on the threshold voltage.

  The substrate potential Vsub is set to the lowest potential among the three types of VPLs for FBC, NFET, and PFET.

  Thus, in the first embodiment, since the N diffusion layer 14 is disposed below the PFET 3 and the P diffusion layer 12 is disposed below the NFET 2, the back channels of the NFET 2 and the PFET 3 can be turned off reliably, and the buried oxide film 10 The peripheral circuit 4 can be stably operated even when the FBC 1 is arranged on a PD-SOI having a thick (BOX).

  In addition, as the SOI transistor is miniaturized, the silicon film thickness is reduced, and when the FD-SOI is used, the FBC1 and the CMOS circuit can be operated under optimum operating conditions. Further, according to the present embodiment, it is possible to automatically adjust the variation in the threshold voltage of the transistor of the FD-SOI due to fluctuations in the manufacturing process to ensure stable operation of not only the FBC 1 but also the CMOS circuit.

(Second Embodiment)
In the second embodiment, unlike the first embodiment, the plate potentials of FBC1, NFET2, and PFET3 are given by the P diffusion layer.

  FIG. 26 is a cross-sectional view of the second embodiment of the semiconductor memory device according to the present invention. The semiconductor memory device of FIG. 26 includes an N diffusion layer (N-type well) 31 formed over the entire P substrate 13 and a plurality of P diffusion layers 32, 33, 34. These P diffusion layers 32, 33, and 34 are provided corresponding to each of the FBC1, NFET2, and PFET3, and supply a plate potential.

  However, in order to have the same transistor characteristics as in FIG. 16 due to the work function difference (1 V) between N-type silicon and P-type silicon, the potentials applied to the P diffusion layers 32, 33, and 34 are as shown in FIG. Each value is 1V higher than the potential in the case. The highest potential 0V or positive potential among the potentials applied to the P diffusion layers 32 to 34 is applied to the N diffusion layer 31. The potential of the P substrate 13 does not need to be given in particular and may be floating.

  On the other hand, FIG. 27 is a modification of FIG. 26 and shows an example using the N substrate 7. In the case of FIG. 27, the P diffusion layer 41 is formed on the upper surface of the N substrate 7, and the N diffusion layers 40, 42, 43 are separately formed on the upper surface. N diffusion layers 40, 42, and 43 are provided corresponding to FBC1, NFET2, and PFET3, respectively.

FIG. 28 is a cross-sectional view showing a modification of FIG. 26, and shows an example in which an N substrate 7 is used instead of the P substrate 13. Also in the example of FIG. 28, the following (1) to (4) are possible as a method of applying the substrate bias to each of the FBC 1, the peripheral NFET 2 and the peripheral PFET 3.
(1) Provided from outside the chip. (2) Give a fixed value generated in the chip (3) Adjust to an appropriate value at the time of die sort and program the value (4) Automatically adjust in the chip

  The substrate potential Vsub is set to the highest potential among the three types of VPLs for FBC, NFET, and PFET.

(Third embodiment)
In the third embodiment, the plate potential of FBC1 is given by the P diffusion layer, and the plate potentials of NFET2 and PFET3 are given by the N diffusion layer.

  FIG. 29 is a sectional view of a third embodiment of the semiconductor memory device according to the present invention. A P diffusion layer 41 formed over the entire upper surface of the P substrate 13 and N diffusion layers 42 and 43 formed separately on the P diffusion layer 41 are provided. The N diffusion layer 42 is formed below the NFET 2, and the N diffusion layer 43 is formed below the PFET 3. The same potential is applied to the P substrate 13 and the P diffusion layer 41.

Due to the difference in work function between P-type silicon and N-type silicon of about 1V, in the case of FIG. 29, FBC1 having substantially the same characteristics can be realized by applying a potential about 1V higher than that of FIG. . Therefore, in order to realize FBC1 having the same characteristics as FBC1 in FIG. 16 in FIG. 29, it is necessary to give V _sub = −1V.

  Even in this embodiment, the substrate bias is applied to each of the FBC 1, the peripheral NFET 2 and the peripheral PFET 3 from (1) the outside of the chip, (2) a fixed value generated in the chip is provided, and (3) suitable for die sorting. (4) It can be automatically adjusted within the chip.

  The substrate potential Vsub is set to the lowest potential among the three types of VPLs for FBC, NFET, and PFET.

(Fourth embodiment)
In the fourth embodiment, the plate potential of FBC1 and NFET2 is given by the P diffusion layer, and the plate potential of PFET3 is given by the N diffusion layer.

  FIG. 30 is a sectional view of a fourth embodiment of the semiconductor memory device according to the present invention. The semiconductor memory device of FIG. 30 includes an N diffusion layer 8 formed over the entire upper surface of the N substrate 7 and a plurality of P diffusion layers 44 and 45 formed separately in a part of the N diffusion layer 8. ing. The P diffusion layer 44 is formed below the FBC 1, and the P diffusion layer 45 is formed below the NFET 2.

  Vsub = 2.5V is applied to the N substrate 7, the P diffusion layer 44 is set to VPL = −1V, and the P diffusion layer 45 is set to VPL = 0V.

  Also in the fourth embodiment, the substrate bias is applied to each of the FBC 1, the peripheral NFET 2 and the peripheral PFET 3 from (1) the outside of the chip, (2) a fixed value generated in the chip is provided, and (3) an appropriate value at the time of die sorting (4) Automatic adjustment within the chip.

  The substrate potential Vsub is set to the highest potential among the three types of VPLs for FBC, NFET, and PFET.

(Fifth embodiment)
The fifth embodiment shows an example in which a PD-SOI substrate 5 having a thick silicon layer is used.

  FIG. 31 is a cross-sectional view of the fifth embodiment of the semiconductor memory device according to the present invention, showing an example in which the thickness of the buried oxide film 10 is changed between the FBC 1 and the peripheral circuit 4.

  The semiconductor memory device of FIG. 31 includes a buried oxide film 10 formed on the upper surface of a P substrate and an N diffusion layer 11 formed corresponding to the position of the FBC 1. It is only thick.

  Since the buried oxide film 10 in the peripheral circuit 4 portion is thickened, there is no fear that the back channel of the PFET 3 is turned on even if the P substrate is set to −1V.

  Also in the fifth embodiment, the substrate bias is applied to each of the FBC 1, the peripheral NFET 2 and the peripheral PFET 3 from (1) the outside of the chip, (2) a fixed value generated in the chip is provided, and (3) suitable for die sorting. (4) It can be automatically adjusted within the chip.

  The substrate potential Vsub is set to the lowest potential among the three types of VPLs for FBC, NFET, and PFET.

(Sixth embodiment)
In the sixth embodiment, when a PD-SOI substrate 5 having a thick silicon layer is used, the same substrate bias can be set for all devices.

  FIG. 32 is a sectional view of a sixth embodiment of a semiconductor memory device according to the present invention. The semiconductor memory device of FIG. 32 includes a P diffusion layer 41 formed over the entire upper surface of the P substrate, and a buried oxide film 10 formed on the upper surface of the P diffusion layer 41. The buried oxide film 10 is formed thick only in the peripheral circuit 4 portion.

(Seventh embodiment)
In the seventh embodiment, the FBC portion is on the FD-SOI and the peripheral circuit portion is on the PD-SOI.

FIG. 33 is a sectional view of a seventh embodiment of the semiconductor memory device according to the present invention. The basic structure of the peripheral circuit portion of the semiconductor memory device of FIG. 33 is the same as that of FIG. 31, the concentration of the channel channel body of FBC1 is NA = 1.0 × 10 ¹⁵ cm ⁻³ , and the concentration of the channel channel body of NFET2 is NA = 5.0 × 10 ¹⁷ cm ⁻³ , and the channel channel body concentration of PFET ³ is ND = 5.0 × 10 ¹⁷ cm ⁻³ .

  Although FBC1 is FD-SOI, NFET2 and PFET3 of the peripheral circuit 4 are PD-SOI. The thickness of the BOX is also thin at the FBC1 array part and thick at the peripheral circuit 4 part.

  As a result, the transistor characteristics of the peripheral circuit 4 do not depend on the substrate potential, and the plate potential of the FBC 1 can give −2 V at the N diffusion layer.

  Instead of FIG. 33, a cross-sectional structure as shown in FIG. 34 may be used. FIG. 34 has the same basic structure as FIG. 33, but provides a plate of FBC1 with a P-type diffusion layer, and Vsub = −1V.

  In the above-described embodiment, the case where the power supply voltage of the peripheral circuit 4 is one set of VCC (= 2.0 V) and VSS (= 0 V) has been described, but the present invention can be extended to a case where there are a plurality of sets. In this case, a configuration may be adopted in which an optimum voltage is applied by separating the diffusion layer under the buried oxide film 10 (BOX) for each power supply voltage.

  Further, in the above-described embodiment, the potential is applied by the diffusion layer under the buried oxide film 10 (BOX). However, the structure is not limited to this. For example, the potential may be applied by a polysilicon layer into which an N-type impurity or a P-type impurity is introduced.

  Furthermore, as shown in FIG. 35, plates 51, 52, and 53 made of P-type, N-type polysilicon, or metal may be embedded in the buried oxide film 10 to apply a potential. In the example of FIG. 35, VPL = -2V is applied to the plate 51 made of N-type polysilicon below the FBC1, VPL = -1V is applied to the plate 52 below the NFET2, and VPL = 2.5 is applied to the plate 53 below the PFET3. The example which gives V is shown.

  The plate 51 below the FBC 1 may be arranged in array units. Alternatively, the present embodiment can also be applied to an FBC 1 having a double gate structure in which a plate is provided along each word line.

  In each of the embodiments described above, the semiconductor memory device having the FBC 1 has been described. However, the present invention is also applicable to a semiconductor integrated circuit that does not have the FBC 1.

1 is a cross-sectional view of a first embodiment of a semiconductor memory device according to the present invention. FIG. 3 is a diagram showing a cross-sectional structure of a semiconductor memory device in which an N diffusion layer 11 is formed below the FBC 1 and a P diffusion layer 12 is formed below the NFET 2 and the PFET 3. FIG. 2 is a cross-sectional view of a semiconductor memory device having a structure different from that in FIG. 1. FIG. 4 is a cross-sectional view of a semiconductor memory device having a structure different from that of FIG. 3. The figure which shows the result of having simulated the characteristic of FD-FBC (completely deficient FBC) formed with NFET. The figure which shows the simulation result of N type polysilicon gate NFET of the peripheral circuit 4 formed on FD-SOI. The figure which shows the presence or absence of the hysteresis phenomenon of NFET. The figure which shows the presence or absence of the hysteresis phenomenon of NFET. The figure which shows the presence or absence of the hysteresis phenomenon of NFET. The figure which shows the presence or absence of the hysteresis phenomenon of NFET. The figure which shows the simulation result of the characteristic of N type polysilicon gate PFET3 and P type polysilicon gate PFET3 of the peripheral circuit 4 formed on FD-SOI. The figure which shows the presence or absence of the history phenomenon of PFET. The figure which shows the presence or absence of the history phenomenon of PFET. The figure which shows the presence or absence of the history phenomenon of PFET. The figure which shows the presence or absence of the history phenomenon of PFET. FIG. 3 is a cross-sectional view of a semiconductor memory device in which N diffusion layers are arranged for each of FBC, NFET, and PFET. FIG. 3 is a layout diagram of a silicon chip made of an SOI substrate 5. FIG. 3 is a cross-sectional view showing a connection portion between an N diffusion layer 11 and a wiring layer 16. The figure which shows the example which supplies plate voltage from a pad. The figure which shows the example which makes plate voltage the fixed value which generate | occur | produced in the chip | tip. FIG. 5 is a circuit diagram corresponding to the PFET3 region when VPL is higher than Vcc = 2.0V. FIG. 21 is a circuit diagram showing a detailed configuration of an oscillator 21 in FIG. 20. The circuit diagram which shows the example which sets a plate voltage to an appropriate value at the time of die sort. The circuit diagram in the case of automatically adjusting the plate voltage within the chip. The circuit diagram in the case of automatically adjusting the plate voltage within the chip. Sectional drawing of 2nd Embodiment of the semiconductor memory device based on this invention. FIG. 27 is a cross-sectional view of a semiconductor memory device using an N substrate, which is a modification of FIG. 26. FIG. 27 is a cross-sectional view showing a modification of FIG. 26. Sectional drawing of 3rd Embodiment of the semiconductor memory device based on this invention. Sectional drawing of 4th Embodiment of the semiconductor memory device based on this invention. Sectional drawing of 5th Embodiment of the semiconductor memory device based on this invention. Sectional drawing of 6th Embodiment of the semiconductor memory device based on this invention. Sectional drawing of 7th Embodiment of the semiconductor memory device based on this invention. The channel channel body concentration of FBC1 is NA = 1.0 × 10 ¹⁵ cm ⁻³ , the channel channel body concentration of NFET2 is NA = 5.0 × 10 ¹⁷ cm ⁻³ , and the channel channel body concentration of PFET3 is ND = 5.0 × 10 ¹⁷ Sectional drawing at cm- ³ . FIG. 5 is a cross-sectional view of a case where plates 51, 52, and 53 made of P-type, N-type polysilicon, or metal are embedded in a buried oxide film 10;

Explanation of symbols

1 FBC
2 NFET
3 PFET
4 peripheral circuit 5 SOI substrate 6 insulating layer 7 N substrate 8 N diffusion layer 9 P diffusion layer 10 buried oxide film 11 N diffusion layer 12 P diffusion layer 13 P substrate 14 N diffusion layer 15 N diffusion layer 21 Oscillator

Claims (5)

A first semiconductor layer formed on the substrate via a buried insulating film;
A floating channel body formed in the first semiconductor layer, a main gate for forming a channel on the first surface side of the channel body, and a second surface opposite to the first surface An FBC (Floating Body Cell) having an auxiliary gate formed to be capacitively coupled;
A logic circuit that is formed in the first semiconductor layer and separated from the FBC by an insulating film, and transmits and receives signals to and from the FBC;
A semiconductor memory device, wherein the buried oxide film below the logic circuit is thicker than the buried oxide film below the FBC.   2. The semiconductor memory device according to claim 1, wherein the impurity concentration of the channel region of the logic circuit is set higher than the impurity concentration of the channel region of the FBC. A first semiconductor layer formed on the substrate via a buried insulating film;
A floating channel body formed in the first semiconductor layer, a main gate for forming a channel on the first surface side of the channel body, and a second surface opposite to the first surface An FBC (Floating Body Cell) having an auxiliary gate formed to be capacitively coupled;
A logic circuit which is formed in the first semiconductor layer by being separated from the FBC by an insulating film, and which transmits and receives signals to and from the FBC;
A semiconductor memory device comprising: a plurality of polysilicon layers or metal layers formed separately from each other inside the buried insulating film corresponding to each of the FBC and the logic circuit.   4. The polysilicon layer or the metal layer corresponding to the FBC and the polysilicon layer or the metal layer corresponding to the logic circuit are set to different potentials. Semiconductor memory device. A first semiconductor layer formed on the substrate via a buried insulating film;
A floating channel body formed in the first semiconductor layer, a main gate for forming a channel on the first surface side of the channel body, and a second surface opposite to the first surface An FBC (Floating Body Cell) having an auxiliary gate formed to be capacitively coupled;
A logic circuit which is formed in the first semiconductor layer by being separated from the FBC by an insulating film, and which transmits and receives signals to and from the FBC;
A semiconductor memory device comprising: a polysilicon layer or a metal layer formed inside the buried insulating film corresponding to the FBC.

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