JP2006074746A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that a semiconductor integrated circuit does not normally operate after the lapse of a long period of time by causing deterioration with the passage of time caused by an NBTI (Negative Bias Temperature Instability) phenomenon by the staining-out of boron when a current flows to an MOS transistor at all the time. <P>SOLUTION: The semiconductor device comprises: a first semiconductor integrated circuit 11 having a predetermined function, the first semiconductor integrated circuit outputting a required output signal; a second semiconductor integrated circuit 12 in which a plurality of MOS elements (PMOS transistor or NMOS transistor) for independently being switched to and from a conducted state and a non-conducted state in accordance with a plurality of gate signals each having different timing is provided and the plurality of MOS elements are connected in parallel to an output or an input of the first semiconductor integrated circuit; and a pulse generating circuit 13 for generating and outputting the plurality of gate signals Φi ((i)=1, 2, 3) each having different timing with respect to the plurality of MOS elements in the second semiconductor integrated circuit. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device including at least two semiconductor integrated circuits having different functions, and more particularly to a technique for improving reliability and extending life.

  In a semiconductor integrated circuit, a MOS element (MOS transistor) may be used as a pull-up resistor by always turning it on. Pull-up is to keep the potential stable by connecting to the positive side of the power supply through a resistor, and the connected resistor is called a pull-up resistor. The pull-up resistor is often used particularly in an I / O pad circuit for exchanging the semiconductor device with the outside, a keeper circuit in a dynamic circuit, and the like.

In recent years, a technique for optimally controlling the substrate potential of a MOS transistor has been proposed for the purpose of optimizing delay variation due to process factors and achieving both reduction in power consumption and high-speed operation. If this technique is to be applied, it is necessary to supply the substrate potential according to the characteristics of the MOS transistor such as process variations. As one method for realizing this, the semiconductor device is divided into a plurality of regions, the on-resistance value of the monitoring MOS transistor is evaluated for each region, and the substrate potential generated according to the evaluation result is within the corresponding region. Some of them are supplied to MOS transistors. A configuration in which the gate voltage of the monitoring MOS transistor is fixed to the on-voltage side has been proposed.
A predictive reliability model for PMOS bias temperature degradation Mahapatra, S. †† Alam, MA †† Electron Devices Meeting, 2002. IEDM '02. Digest. International Publication Date: † 2002 On page (s): 505-508

  When the MOS transistor is used as a pull-up resistor by making the MOS transistor always conductive, a large DC current always flows as a result, which causes deterioration of the characteristics of the MOS transistor. This is the same when the MOS transistor is always in a conductive state as a monitoring means for generating the substrate potential.

  As one of characteristic deteriorations, a phenomenon is known in which the saturation current of a MOS transistor is significantly deteriorated over time by fixing the gate voltage to the on-voltage side. That is, the absolute value of the threshold voltage of the transistor gradually increases as the chip temperature rises with the substrate potential back biased with respect to the gate. This results in a slower transistor speed over time. Specifically, the MOS transistor may deteriorate by about 20% in saturation current characteristics, and the semiconductor integrated circuit may not operate normally after a long period of time. This phenomenon is called NBTI (Negative Bias Temperature Instability), and it has recently been found that this cause is due to exudation of boron or the like (see Non-Patent Document 1).

  Accordingly, an object of the present invention is to solve the problem of aging degradation due to NBTI, and to provide a semiconductor device whose characteristics do not deteriorate even when used for many years.

  The semiconductor device according to the present invention includes a first semiconductor integrated circuit that has a predetermined function and outputs a required output signal, and a conductive state and a non-conductive state that are independent of each other in accordance with a plurality of gate signals shifted in timing. A second semiconductor integrated circuit having a plurality of switching MOS elements (PMOS transistors or NMOS transistors), wherein the plurality of MOS elements are connected in parallel to the output or input of the first semiconductor integrated circuit. It has been configured.

  Further, the semiconductor device may include a pulse generation circuit that generates and outputs a plurality of gate signals at different timings with respect to the plurality of MOS elements in the second semiconductor integrated circuit.

  Conventionally, a pull-up resistor or current monitoring means for generating a substrate potential, which has been realized by always keeping one MOS element in a conductive state, is configured by connecting a plurality of MOS elements in parallel, and these are time-dispersed. Make it work. That is, the second semiconductor integrated circuit is composed of a plurality of MOS elements, which are connected in parallel to the output or input of the first semiconductor integrated circuit. Then, by applying a gate signal to each of the plurality of MOS elements from a pulse generation circuit or the like, the plurality of MOS elements are controlled on / off independently of each other. The timings of gate signals applied to a plurality of parallel-connected MOS elements are shifted from each other. Thereby, the output signal of the first semiconductor integrated circuit is stabilized without being affected by which of the plurality of MOS elements is conductive at a certain moment. By operating a plurality of MOS elements in a time-sharing manner, the NBTI phenomenon at the time of long-time use in each MOS element is reduced, and a circuit configuration that is hardly affected by aging deterioration is realized. In addition, a circuit to be added to prevent aging deterioration requires only a small number of MOS elements. As a result, an equivalent function (pull-up resistor, current monitor, etc.) can be realized without significantly changing the conventional circuit.

  In the semiconductor device having the above configuration, when the first semiconductor integrated circuit is a substrate potential generation circuit and the second semiconductor integrated circuit is a substrate potential generation characteristic monitor circuit, the following development is preferable. The plurality of MOS elements in the second semiconductor integrated circuit (characteristic monitor circuit) are connected in parallel to the inputs of the first semiconductor integrated circuit (substrate potential generation circuit). In this case, the drains of the plurality of MOS elements are connected through individual sample and hold circuits. Then, the output of the first semiconductor integrated circuit (substrate potential generation circuit) is connected to each substrate of the plurality of MOS elements in the second semiconductor integrated circuit (characteristic monitor circuit).

  By monitoring the operating state of a plurality of MOS elements that are characteristic monitoring means in a plurality of areas into which the semiconductor device is divided, and feeding back the monitoring results to the substrate potential generation circuit, the substrate according to the operating state of each MOS element Generates and outputs a potential. In this case, feedback control is affected due to aging degradation due to the NBTI phenomenon when the MOS element is used for a long time. In contrast, by connecting multiple MOS elements to the input of the substrate potential generation circuit via individual sample and hold circuits, and shifting the timing of sampling and holding to each other, the evaluation of monitors by individual MOS elements is averaged. can do. As a result, the substrate output of the substrate potential generation circuit is hardly affected by the NBTI phenomenon, and becomes a substantially constant value corresponding to the characteristics of the MOS element.

  Further, in the semiconductor device having the above configuration, when the first semiconductor integrated circuit is configured as an I / O pad circuit, the following development is preferable. When the first semiconductor integrated circuit is a tristate buffer, the second semiconductor integrated circuit is configured as a pull-up circuit. Further, when the first semiconductor integrated circuit is a dynamic circuit, the second semiconductor integrated circuit is configured as a keeper circuit. In the keeper circuit, gate signals for a plurality of MOS elements in the second semiconductor integrated circuit are supplied from a NAND circuit having two inputs of the output signal and the timing signal of the first semiconductor integrated circuit.

  By configuring the pull-up circuit for the output of the tri-state buffer with a plurality of independent MOS elements, the output of the tri-state buffer can be in a stable state that is not easily affected by the NBTI phenomenon during long-time use. . By configuring the keeper circuit for the output of the dynamic circuit with a plurality of independent MOS elements, the output of the dynamic circuit can be in a stable state that is not easily affected by the NBTI phenomenon during long-time use.

  In the semiconductor device having the above structure, it is preferable that the plurality of gate signals are signals having different phases at the same frequency, and a total voltage thereof is substantially constant per unit time. Alternatively, the plurality of gate signals preferably have the same transition probability.

  If the total voltage of the plurality of gate signals is substantially constant per unit time, the pull-up operation can be stabilized despite the independent operation of the plurality of MOS elements with shifted timing. Further, if the transition probabilities are equal, a pull-up resistor as if a plurality of MOS elements is always in conduction is realized.

  A semiconductor device according to the present invention includes a plurality of MOS elements and a logic circuit that generates a plurality of gate signals input to the gates of the plurality of MOS elements based on an input signal, and outputs a required output signal. The plurality of MOS elements are equivalent to an output of a required output signal of the semiconductor device, and any one of the plurality of gate signals is a first logic value. If so, the value of the required output signal is determined regardless of the values of other gate signals.

  The semiconductor device according to the present invention includes a plurality of MOS elements and a plurality of switch elements, wherein the plurality of MOS elements are connected in series, and the gates of the plurality of MOS elements are connected in common. A substrate of the MOS elements is commonly connected, and among the plurality of MOS elements, an end drain and an end source are each connected to one of the switch elements, and the other of the switch elements has a predetermined function. The connection between the drain at the end and the source at the end is switched according to a control signal that is connected to the circuit and controls the switch element.

  Furthermore, a semiconductor device according to the present invention includes a plurality of MOS elements and a plurality of switch elements, the plurality of MOS elements are connected in parallel, and the gates of the plurality of MOS elements are connected in common, The MOS element substrate and the source or drain are each connected to one of the switch elements, the other of the switch elements is connected to a semiconductor integrated circuit having a predetermined function, and according to a control signal for controlling the switch element, The connection between the substrate and the source or drain is exchanged.

  By configuring as described above, conventionally, one MOS element is always in a conductive state, but a plurality of parallel-connected MOS elements are in a conductive state in a distributed manner. It becomes possible to reduce the influence of the phenomenon. Therefore, aged deterioration can be prevented, and a semiconductor device that operates stably over a long period of time can be realized.

  In addition, a small number of MOS elements are required for a circuit to be added in order to prevent aged deterioration. As a result, an equivalent function (pull-up resistor, current monitor, etc.) can be realized without significantly changing the conventional circuit.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  An example of the basic configuration of the embodiment of the present invention will be described with reference to FIG. FIG. 1 shows a schematic configuration of a semiconductor device 10 common to first to third embodiments described later. Note that this schematic configuration is merely an example, and a configuration changed within a range that does not change the gist of the present invention may be used.

  The semiconductor device 10 includes a first semiconductor integrated circuit 11, a second semiconductor integrated circuit 12, and a pulse generation circuit 13. The output of the pulse generation circuit 13 is connected to the input of the second semiconductor integrated circuit 12. The first semiconductor integrated circuit 11 and the second semiconductor integrated circuit 12 are connected bidirectionally. However, they may be connected in one direction, and which of the first semiconductor integrated circuit 11 and the second semiconductor integrated circuit 12 is the receiving side depends on the embodiment. The first semiconductor integrated circuit 11 has an output port for outputting a signal to another semiconductor integrated circuit (not shown).

(Embodiment 1)
A semiconductor device according to a first embodiment of the present invention will be described with reference to FIGS.

  The first embodiment is an example of a semiconductor device that supplies an optimum substrate potential to a MOS transistor in another semiconductor integrated circuit. In the first embodiment, the second semiconductor integrated circuit 12 is a characteristic monitor circuit (current monitor circuit) that monitors the characteristics of each region of the semiconductor device 10. The first semiconductor integrated circuit 11 is a substrate potential generation circuit that generates a substrate potential according to the characteristics of the MOS transistor monitored by the characteristic monitor circuit.

  FIG. 2 is a circuit diagram showing a configuration of the characteristic monitor circuit 12a.

  The characteristic monitor circuit 12a has n N-channel MOS transistors QN1, QN2,. The drains of the NMOS transistors QN1, QN2,... QNn are connected to an equivalent constant current source 21, the sources are connected in common, and the substrates are also connected in common. The gate is connected to the pulse output terminal of the pulse generation circuit 13, and is inputted with a timing signal Φi (i = 1, 2,... N). The drains of the NMOS transistors QN1, QN2,..., QNn are connected to the input terminals of the substrate potential generation circuit 11a shown in FIG. 4 via the sample hold circuit 14a shown in FIG. The commonly connected substrates of the NMOS transistors QN1, QN2,... QNn are connected to the substrate output port BN of the substrate potential generating circuit 11a.

  The n NMOS transistors QN1, QN2,..., QNn correspond to a conventional single NMOS transistor that is always in a conductive state, and perform the same function.

  The NMOS transistors QN1, QN2,... QNn are switched between a conductive state and a non-conductive state independently of each other in accordance with a timing signal Φi (i = 1, 2,... N) applied from the pulse generation circuit 13 to the gate. Then, the voltage drop (resistance) of the NMOS transistor with respect to the constant current supply from the constant current source 21 is monitored, and the monitor result is supplied to the substrate potential generation circuit 11a via the sample hold circuit 14a.

  The pulse generation circuit 13 has n pulse output terminals. A timing signal Φi (i = 1, 2,... N) as shown in FIG. 5 is supplied from each pulse output terminal to the gates of the NMOS transistors QN1, QN2,... QNn in the characteristic monitor circuit 12a. The n timing signals Φi (i = 1, 2,... n) are shifted from each other in time, and the activation of the NMOS transistors QN1, QN2,.

  The outputs of the NMOS transistors QN1, QN2,... QNn are connected to the corresponding sample and hold circuits 14a. This is to stabilize the input to the substrate potential generation circuit 11a. A set of these n sample and hold circuits 14 a. The connection circuit 14 is unique to the first embodiment and is not shown in FIG.

  FIG. 3 is a circuit diagram showing a configuration of the sample hold circuit 14a. The sample hold circuit 14a is provided corresponding to the NMOS transistor QNi (i = 1, 2,... N), and includes a sample capacitor C1, a hold capacitor C2, a comparator 22, and switch elements S1, S2, S3. ing. The corresponding NMOS transistor QNi is turned on by the timing signal Φi (i = 1, 2,... N) from the pulse generation circuit 13, but the switch element S1 is turned on by the timing signal Φi, and the inverted timing signal / Φi The switch elements S2 and S3 are turned on. The switch element S1 and the switch elements S2 and S3 perform a contradictory operation.

  When the NMOS transistor QNi corresponding to the timing signal Φi is in a conductive state, the switch element S1 is ON and the switch elements S2 and S3 are OFF. The monitoring result from the NMOS transistor QNi is accumulated in the sampling capacitor C1 via the switch element S1. The information of the sample capacitor C1 is offset by passing through the comparator 22, and the monitor result is evaluated. Next, when the timing signal Φi is inverted to the “L” level, the NMOS transistor QNi is turned off, the switch element S1 is also turned off, and the switch elements S2 and S3 are turned on. The monitoring result output from the comparator 22 is held by the holding capacitor C2, and the monitoring result is sent to the input terminal of the substrate potential generation circuit 11a via the switch element S3.

  FIG. 4 is a circuit diagram showing a configuration of a substrate potential generation circuit 11a as the first semiconductor integrated circuit 11. As shown in FIG. The output terminal of the connection circuit 14 is connected to the input terminal of the substrate potential generation circuit 11a. The connection circuit 14 includes n sample and hold circuits 14a... Corresponding to the n NMOS transistors QN1, QN2,. The output terminals of these sample and hold circuits 14a ... are connected in common and connected to the input terminal of the substrate potential generating circuit 11a.

  In the evaluation period of the first NMOS transistor QN1, the average output value of the sample and hold circuits 14a... Corresponding to the remaining (n−1) NMOS transistors QN2 to QNn is output from the connection circuit 14. Similarly, during the evaluation period of the second NMOS transistor QN2, the average output values of the sample and hold circuits 14a... Corresponding to the remaining (n−1) NMOS transistors QN1, QN3 to QNn are output. When none of the NMOS transistors is an evaluation target, an average output value of all the sample hold circuits 14a... Is output.

  The substrate potential generation circuit 11 a is composed of a differential circuit 31 and an output buffer circuit 32. The output terminal of the connection circuit 14 is connected to one input terminal of the differential circuit 31. The differential circuit 31 differentially amplifies a signal input via the connection circuit 14, that is, the average output value. The differentially amplified signal is buffered by the output buffer 32 and then output from the substrate output port BN. The output of the substrate output port BN has a value corresponding to the average characteristic of each of the NMOS transistors QN1, QN2,... QNn in the characteristic monitor circuit 12a. This is an optimum value according to the characteristics of the NMOS transistor. The supply substrate voltage output from the substrate output port BN is output to the substrate of a plurality of MOS transistors (not shown), and is also common to the substrates of the n NMOS transistors QN1, QN2,... QNn in the characteristic monitor circuit 12a. Supplied.

  The evaluation of the n NMOS transistors QN1, QN2,..., QNn in the characteristic monitor circuit 12a is an independent individual evaluation based on time dispersion, but is averaged when the monitoring result is reflected in the generation of the substrate potential.

  As described above, the n NMOS transistors QN1, QN2,... QNn of the characteristic monitor circuit 12a operate in a time-sharing manner, so that the NBTI phenomenon when the NMOS transistors QN1, QN2,. It is possible to realize a circuit configuration that is not easily affected by

  In the above description, the number of NMOS transistors that are turned on and evaluated at a given time is single. However, a configuration in which two or more NMOS transistors are simultaneously turned on and evaluated in each period is evaluated. It is good. What is important is that any of the NMOS transistors QN1, QN2,... QNn in a certain period is in a conductive state, and is not affected by the substrate output port BN of the substrate potential generation circuit 11a. The corresponding substrate potential can be output almost constant. In other words, n NMOS transistors QN1, QN2,... QNn connected in parallel in the characteristic monitor circuit 12a are operated in a time-sharing manner so as not to affect the output of the substrate potential generation circuit 11a.

  In the above description, the sample-and-hold circuit 14a is configured to turn on the switch element S3 when data is held. However, if it is off when the NMOS transistor is evaluated, it is not always necessary to turn it on when data is held. Since the average output value of the plurality of sample and hold circuits 14a is input to the substrate potential generation circuit 11a, if each sample and hold circuit 14a outputs a value that is correctly evaluated, the number of sample and hold circuits 14a that perform output Because it doesn't matter.

  In the above description, the timing signal Φi (i = 1, 2,...) Is individually applied to the gates of the NMOS transistors as a configuration for switching the n NMOS transistors QN1, QN2,. n) is applied. Instead of this, for example, a switch element may be inserted between the source of each NMOS transistor and a current source, and the switch element may be individually controlled to switch between a conductive state and a non-conductive state. .

  In the first embodiment, the substrate potential generation circuit that generates the substrate potential of the NMOS transistor has been described. However, a person skilled in the art can easily modify the configuration for generating the substrate potential of the PMOS transistor based on the first embodiment. it can.

(Embodiment 2)
A semiconductor device according to a second embodiment of the present invention will be described with reference to FIG. 1 and FIGS.

  The second embodiment is an example of an I / O pad circuit. In the second embodiment, the first semiconductor integrated circuit 11 is a tri-state buffer, and the second semiconductor integrated circuit 12 is a pull-up circuit.

  FIG. 6 is a circuit diagram showing the configuration of the tri-state buffer 11b and the pull-up circuit 12b. The tri-state buffer 11b buffers the input signal with the activation signal and outputs it. The pull-up circuit 12b is for preventing instability of the high impedance output when the tri-state buffer 11b is inactivated. This pull-up circuit 12b is composed of three PMOS transistors QP1, QP2 and QP3. The sources of the PMOS transistors QP1, QP2, and QP3 are connected to the power supply terminal, and the drains are commonly connected to the output terminal of the tristate buffer 11b. Timing signals Φ1, Φ2, and Φ3 from the pulse generation circuit 13 are individually applied to the gates of the PMOS transistors QP1, QP2, and QP3.

  The three PMOS transistors QP1, QP2, and QP3 correspond to a conventional single PMOS transistor that is always on.

  FIG. 7 is a circuit diagram showing a configuration of the pulse generation circuit 13. The pulse generation circuit 13 is composed of three delay elements D1, D2, and D3. The output terminal of the delay element D1 is connected to the input terminal of the delay element D2, the output terminal of the delay element D2 is connected to the input terminal of the delay element D3, and the output terminal of the delay element D3 is connected to the input terminal of the delay element D1. It has become a ring oscillator. Timing signals Φ1, Φ2, and Φ3 output from the delay elements D1, D2, and D3, respectively, are input signals at the gates of the PMOS transistors QP1, QP2, and QP3 in the pull-up circuit 12b.

  FIG. 8 shows the waveforms of the timing signals Φ1, Φ2, and Φ3 and the average voltage values of the timing signals Φ1, Φ2, and Φ3. The waveforms of the timing signals Φ1, Φ2, and Φ3 have the same frequency and different phases. The average value of the voltage values of the three timing signals Φ1, Φ2, and Φ3 is constant per unit time. The transition probabilities of the PMOS transistors QP1, QP2, and QP3 input to the respective gates of the timing signals Φ1, Φ2, and Φ3 are equal to each other, and a pull-up resistor as if one PMOS transistor is always in a conductive state. Is realized.

  The sum of the pull-up current capabilities of the three PMOS transistors QP1, QP2, and QP3 can be made comparable to the pull-up current capability of a single PMOS transistor that is always conducting. Therefore, the pull-up can be realized without any difference from the conventional one, and the aging deterioration due to the NBTI phenomenon at the time of long-time use is reduced to about 1/3 of the conventional one. Therefore, it is possible to ensure long-life reliability in an I / O pad circuit where pull-up resistance is important.

  In the above description, the number of PMOS transistors is three. However, the present invention is not limited to this. Further, the transistor is not limited to a PMOS transistor, and may be an NMOS transistor. The pulse generation circuit 13 is not limited to a configuration in which a plurality of delay elements are connected in a ring. What is important is that the same function as the continuous conduction of a single transistor is realized by the time dispersion operation of a plurality of MOS transistors. In other words, a plurality of MOS transistors are operated in a time-sharing manner so as not to affect the output of the tristate buffer 11b.

  In the above description, as a configuration for switching the conduction state / non-conduction state of the three PMOS transistors QP1, QP2, and QP3, the timing signal Φi (i = 1, 2, 3) is individually applied to the gate of each PMOS transistor. ) Is applied. Instead of this, for example, a switch element may be inserted between the source of each PMOS transistor and a current source, and the switch element may be individually controlled to switch between a conductive state and a non-conductive state.

(Embodiment 3)
A semiconductor device according to a third embodiment of the present invention will be described with reference to FIGS.

  Embodiment 3 is an example of a dynamic circuit. In the third embodiment, the first semiconductor integrated circuit 11 is a dynamic circuit, and the second semiconductor integrated circuit 12 is a keeper circuit.

  FIG. 9 is a circuit diagram showing the configuration of the dynamic circuit 11c and the keeper circuit 12c. In the dynamic circuit 11c, a PMOS transistor QP11 and an NMOS transistor QN11 activated by a clock signal and NMOS transistors QN21 and QN22 that switch at high speed by applying input signals A and B to the gates are connected in series. An output signal C corresponding to the input signals A and B is output from the drain connection point of the PMOS transistor QP11 and the NMOS transistor QN21. In the dynamic circuit 11c, since the output may be floating, a keeper circuit 12c is provided.

  The keeper circuit 12c includes three PMOS transistors QP21, QP22, and QP23 and three NAND circuits NA11, NA12, and NA13. The sources of the PMOS transistors QP21, QP22, and QP23 are connected to the power supply terminal, and the drains are commonly connected to the output of the dynamic circuit 11c. The gates of the PMOS transistors QP21, QP22, and QP23 are connected to the outputs of the corresponding NAND circuits NA11, NA12, and NA13. One input of the NAND circuits NA11, NA12, NA13 is connected to the output of the dynamic circuit 11c, and the other input is connected to the outputs of the timing signals Φ1, Φ2, Φ3 of the pulse generation circuit 13. Note that the configuration of the pulse generation circuit 13 is the same as that of the second embodiment (FIG. 7), and thus the description thereof is omitted here. Further, the waveforms of the timing signals Φ1, Φ2, and Φ3 are the same as those in the second embodiment (FIG. 8), and thus description thereof is omitted. The NAND circuits NA11, NA12, NA13 here function as inverters.

  The total pull-up current capability of the three PMOS transistors QP21, QP22, and QP23 can be made comparable to the pull-up current capability of a single PMOS transistor that is always conducting. Therefore, the pull-up can be realized without any difference from the conventional one, and the aging deterioration caused by the NBTI phenomenon when used for a long time is reduced to about 1/3 of the conventional one. Accordingly, it is possible to ensure long-life reliability in a keeper circuit for a dynamic circuit in which a pull-up resistor is important.

  In the above description, the number of PMOS transistors is three, but the present invention is not limited to this. Further, the transistor is not limited to a PMOS transistor, and may be an NMOS transistor. What is important is that the same function as the continuous conduction of a single transistor is realized by the time dispersion operation of a plurality of MOS transistors. In other words, a plurality of MOS transistors are operated in a time-sharing manner so as not to affect the output of the dynamic circuit 11c.

  Further, in the above description, as a configuration for switching the conduction state / non-conduction state of the three PMOS transistors QP21, QP22, QP23, the timing is individually applied to the NAND circuits NA11, NA12, NA13 connected to the gates of the PMOS transistors. The signal Φi (i = 1, 2, 3) is applied. Instead of this, for example, a switch element may be inserted between the source of each PMOS transistor and a current source, and the switch element may be individually controlled to switch between a conductive state and a non-conductive state.

  It can be easily applied to a keeper circuit of a domino circuit.

(Embodiment 4)
A semiconductor device according to the fourth embodiment of the present invention will be described with reference to FIGS.

  In the fourth embodiment, as in the first to third embodiments, a plurality of gate signals having the same transition probability are not input to the gates of the MOS elements at different timings. That is, in the fourth embodiment, signals are logically formed using a CMOS logic circuit, and the NBTI load applied to one MOS element is distributed to a plurality of MOS elements.

  FIG. 10 shows a 2-input NAND circuit. This 2-input NAND circuit is a circuit that outputs an inverted signal of the signal IN as the signal OUT when the signal EN is H, and outputs H as the signal OUT regardless of the value of the signal IN when the signal EN is L. . Such a 2-input NAND circuit is used for clock gating, for example. The clock gating is to control whether to supply a clock or not according to the activation / deactivation of a gating target circuit. In such clock gating, if the period during which the target circuit is active is short and the period during which the target circuit is inactive is long, the period during which the PMOS gate in the two-input NAND circuit is on-voltage side becomes long. It will be received greatly. In this case, the fourth embodiment reduces the deterioration over time due to the NBTI of the PMOS. Of course, the present invention is applicable not only to NAND circuits and clock gating.

  FIG. 11 is a detailed circuit diagram of the 2-input NAND circuit according to the fourth embodiment, which is logically equivalent to the NAND circuit of FIG. The 2-input NAND circuit according to the fourth embodiment receives Logic 10E that internally generates the EN1 signal and the EN2 signal based on the EN signal, and the EN1 signal and the EN2 signal that are generated in addition to the IN signal. And a NAND 10C that outputs a NAND logic signal of an EN signal. In the Logic 10E, the EN signal is input to the clock CLK of the flip-flop 10D, and the inverted output NQ of the flip-flop 10D is input to the data D of the flip-flop 10D. The switch SW10B controlled by the output Q of the flip-flop 10D transmits an EN signal to EN2 when Q is H. The switch SW10A controlled by the output NQ of the flip-flop 10D transmits an EN signal to EN1 when NQ is H. That is, every time EN becomes H, the value of the input signal EN is alternately transmitted to EN1 and EN2.

  FIG. 12 shows an example of a truth table of signals EN, Q, EN1, EN2, IN, and OUT. As shown in FIG. 12, when the signal EN becomes L, the signal L is transmitted to either EN1 or EN2. In the NAND 10C, if either EN1 or EN2 is L, either one of two PMOSs arranged in parallel with EN1 and EN2 being input to the gate is conductive and EN1 and EN2 are input to the gate. Thus, one of the two NMOSs arranged in series becomes non-conductive. That is, OUT becomes H regardless of the value of IN, and is logically equivalent to the 2-input NAND circuit of FIG. In addition, since either one of the PMOSs having EN1 and EN2 input to their gates becomes L, the transistors are turned on, so that the deterioration due to NBTI is distributed to the two PMOSs.

  FIG. 13 shows an example in which the 2-input NAND circuit of the fourth embodiment is applied to clock gating. A two-input NAND circuit composed of Logic 10E and NAND 10C outputs an inverted signal of the clock when the EN signal is H. When the EN signal is L, the clock is fixed to H. That is, when the circuit to which the clock is supplied is inactive, EN is fixed to L. In the lower NAND in the figure, one input is fixed to H. That is, the inverted signal of the clock is always supplied to the circuit. NBTI is severely degraded when the PMOS gate is fixed at L. According to this configuration, since the deterioration of the NAND 10C can be reduced, it is possible to reduce an increase in clock skew due to aged deterioration with a non-gated clock output.

(Embodiment 5)
With reference to FIG. 14, a semiconductor device according to a fifth embodiment of the present invention will be described.

  FIG. 14 shows a characteristic monitor circuit having another configuration in the characteristic monitor circuit 12a of FIG. 2 connected to the substrate potential generation circuit 11a of FIG. In FIG. 14, three NMOS transistors supplied with a common substrate voltage and gate voltage are connected in series. The common gate voltage is set to an arbitrary voltage. The substrate voltage has the same voltage value as the voltage value from the substrate output port of the substrate potential generation circuit 11a.

  The drain of the MOS transistor QN11C is connected to the switch element SW11E. Then, according to the control signal of Φ1, it is selected whether to be connected to the monitor output unit of the differential circuit 31 via the connection circuit 14 or to the ground potential. That is, when Φ1 is H, it is connected to the monitor output V1, and when Φ1 is L, it is connected to the ground. The source of the MOS transistor QN11B is connected to the switch element SW11D. Then, according to the control signal of Φ1, it is selected whether to be connected to the monitor output unit of the differential circuit 31 via the connection circuit 14 or to the ground potential. That is, when Φ1 is H, it is connected to the ground, and when Φ1 is L, it is connected to the monitor output V1. In this manner, the MOS transistors connected to the monitor output V1 and the MOS transistor connected to the ground are alternately switched between the MOS transistors QN11C and QN11B.

  As described above, by switching the MOS transistor connected to the monitor output by Φ1, the gate-source voltage Vgs of the MOS transistor QN11B changes the applied voltage, and the influence of NBTI can be reduced. In the fifth embodiment, it is not necessary to provide n MOS transistors and n sample and hold circuits, and it is possible to reduce the aging deterioration only by the MOS transistor groups connected in series.

  Further, the drain-source voltage Vds of the MOS transistor QN11C is a value in the vicinity of the threshold when Φ1 is H, but is almost as close to 0 when Φ1 is L. Usually, as a factor of aging degradation of MOS transistors, there is a hot carrier effect in addition to the NBTI described above. The hot carrier effect is caused by the drain-source voltage Vds, and is more likely to deteriorate as Vds increases. That is, by controlling which MOS transistor is connected to the monitor output by Φ1, the MOS transistor QN11C changes, so that deterioration due to the hot carrier effect is reduced.

(Embodiment 6)
With reference to FIG. 15, a semiconductor device according to a sixth embodiment of the present invention will be described.

  FIG. 15 shows a characteristic monitor circuit of another configuration in the characteristic monitor circuit 12a of FIG. 2 connected to the substrate potential generation circuit 11a of FIG. In the sixth embodiment, NMOS transistors QN12B and QN12C are connected in parallel, and NMOS transistors QN12B, QN12C, QN12D and QN12E are connected in three stages in series. The gates of the MOS transistors are connected in common and set to an arbitrary voltage. The substrates of the MOS transistors QN12D and QN12E are connected in common, and the same voltage value as the voltage value from the substrate output port of the substrate potential generation circuit 11a is applied.

  The drain of the MOS transistor QN12B is connected to the switch element SW12F, and is selected to be connected to the monitor output unit of the differential circuit 31 or opened by the control signal / Φ1. That is, when Φ1 is H, it is connected to the monitor output V1, and when Φ1 is L, it is opened. The drain of the MOS transistor QN12C is connected to the switch element SW12H, and is selected to be connected to the monitor output unit of the differential circuit 31 or to be opened by the control signal Φ1. That is, when Φ1 is L, it is connected to the monitor output V1, and when it is H, it is opened. In this way, the MOS transistors connected to the monitor output V1 and the MOS transistor connected to the ground are alternately switched between the MOS transistors QN12B and QN12C.

  As described above, the influence of NBTI can be reduced by switching the MOS transistor connected to the monitor output by Φ1. In the sixth embodiment, it is not necessary to provide n MOS transistors and n sample and hold circuits, and aging degradation can be reduced by providing only one monitor circuit shown in FIG.

  The substrate of the MOS transistor QN12B is connected to the switch element SW12G, and is selected to be connected to the substrate output port BN of the substrate potential generation circuit 11a or to the ground potential by the control signal / Φ1. That is, it is connected to the substrate voltage when Φ1 is H, and is grounded when Φ1 is L. The substrate of the MOS transistor QN12C is connected to the switch element SW12I, and is selected to be connected to the substrate output port BN of the substrate potential generation circuit 11a or to the ground potential by the control signal Φ1. That is, it is connected to the substrate voltage when Φ1 is L, and is grounded when it is H.

  The influence due to the hot carrier effect is also caused by the substrate voltage, and the smaller the substrate voltage (back bias), the easier it is to deteriorate. That is, the substrate potential of the MOS transistor QN11C is changed by φ1, so that deterioration due to the hot carrier effect is reduced.

  When the semiconductor device according to the present invention is applied to an I / O pad, it is very useful as a semiconductor chip that performs data communication with the outside by wire. Also, a chip set using the semiconductor chip can be applied. Furthermore, it is possible to ensure a very long-life reliability for a semiconductor device equipped with a substrate control circuit or a dynamic circuit.

1 is a block diagram showing a basic configuration of a semiconductor device according to an embodiment of the present invention. 1 is a circuit diagram showing a configuration of a characteristic monitor circuit according to a first embodiment of the present invention. 1 is a circuit diagram showing a configuration of a sample and hold circuit according to a first embodiment of the present invention. 1 is a circuit diagram showing a configuration of a substrate potential generation circuit according to a first embodiment of the present invention. Waveform diagram of timing signal of pulse generation circuit according to embodiment 1 of the present invention The circuit diagram which shows the structure of the tristate buffer and pull-up circuit concerning Embodiment 2 of this invention The circuit diagram which shows the structure of the pulse generation circuit which concerns on Embodiment 2 of this invention Waveform diagram of timing signal of pulse generation circuit according to embodiment 2 of the present invention The circuit diagram which shows the structure of the dynamic circuit and keeper circuit which concern on Embodiment 3 of this invention Equivalent logic diagram according to Embodiment 4 of the present invention Circuit diagram of 2-input NAND and enable signal generation logic circuit diagram according to embodiment 4 of the present invention Truth table according to Embodiment 4 of the present invention Circuit diagram of application example to clock tree according to embodiment 4 of the present invention Monitor circuit diagram according to Embodiment 5 of the present invention Monitor circuit diagram according to Embodiment 6 of the present invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 1st semiconductor integrated circuit 11a Substrate potential generation circuit 11b Tristate buffer 11c Dynamic circuit 12 2nd semiconductor integrated circuit 12a Characteristic monitor circuit 12b Pull-up circuit 12c Keeper circuit 13 Pulse generation circuit 14 Connection circuit 14a Sample hold Circuit 21 Constant current source 22 Comparator 31 Differential circuit 32 Output buffer circuit BN Board output port

Claims (17)

A first semiconductor integrated circuit having a predetermined function and outputting a required output signal;
A plurality of MOS elements that are switched between a conductive state and a non-conductive state independently of each other in response to a plurality of gate signals whose timings are shifted, wherein the plurality of MOS elements correspond to an output or input of the first semiconductor integrated circuit; A second semiconductor integrated circuit connected in parallel,
A semiconductor device comprising:   2. The semiconductor device according to claim 1, further comprising a pulse generation circuit that generates and outputs a plurality of gate signals shifted in timing with respect to the plurality of MOS elements in the second semiconductor integrated circuit.   2. The semiconductor device according to claim 1, wherein drains of the plurality of MOS elements in the second semiconductor integrated circuit are connected in parallel to the input of the first semiconductor integrated circuit.   4. The semiconductor device according to claim 3, wherein the drains of the plurality of MOS elements are connected in parallel to the input of the first semiconductor integrated circuit via individual sample and hold circuits.   The semiconductor device according to claim 3, wherein an output of the first semiconductor integrated circuit is connected to each substrate of the plurality of MOS elements.   The semiconductor device according to claim 5, wherein the second semiconductor integrated circuit is configured as a characteristic monitor circuit.   The semiconductor device according to claim 1, wherein the first semiconductor integrated circuit is configured as an I / O pad circuit.   The semiconductor device according to claim 1, wherein the second semiconductor integrated circuit is configured as a pull-up circuit.   The semiconductor device according to claim 8, wherein the first semiconductor integrated circuit is configured as a tristate buffer.   The semiconductor device according to claim 1, wherein the second semiconductor integrated circuit is configured as a keeper circuit.   The semiconductor device according to claim 10, wherein the first semiconductor integrated circuit is configured as a dynamic circuit.   11. The gate signal for the plurality of MOS elements in the second semiconductor integrated circuit is supplied from a NAND circuit having two inputs of an output signal and a timing signal of the first semiconductor integrated circuit. Semiconductor device.   2. The semiconductor device according to claim 1, wherein the plurality of gate signals are signals having different phases at the same frequency, and a total voltage thereof is substantially constant per unit time.   The semiconductor device according to claim 1, wherein the plurality of gate signals have the same transition probability. A plurality of MOS elements;
A logic circuit that generates a plurality of gate signals input to the gates of the plurality of MOS elements based on an input signal;
A semiconductor device that outputs a required output signal,
The plurality of MOS elements are equivalent to the output of a required output signal of the semiconductor device, and if any one of the plurality of gate signals has a first logical value, another gate signal A semiconductor device characterized in that the value of the required output signal is determined regardless of the value of. A plurality of MOS elements and a plurality of switch elements;
The plurality of MOS elements are connected in series, the gates of the plurality of MOS elements are connected in common, and the substrates of the plurality of MOS elements are connected in common,
Among the plurality of MOS elements, an end drain and an end source are each connected to one of the switch elements, and the other of the switch elements is connected to a semiconductor integrated circuit having a predetermined function to control the switch element In accordance with a control signal, the connection between the drain at the end and the source at the end is switched. A plurality of MOS elements and a plurality of switch elements;
The plurality of MOS elements are connected in parallel, and the gates of the plurality of MOS elements are connected in common,
The substrates and sources or drains of the plurality of MOS elements are each connected to one of the switch elements, the other of the switch elements is connected to a semiconductor integrated circuit having a predetermined function, and in response to a control signal for controlling the switch elements Then, the semiconductor device is characterized in that the connection between the substrate and the source or drain is exchanged.

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