JP2006066271A - Method for manufacturing image display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly reliable and inexpensive image display device causing no leakage, causing little aged deterioration of electron source characteristics in particular, and having high display quality, by a simple process. <P>SOLUTION: This image display device is equipped with a vacuum vessel formed by making a first substrate 101 face a second substrate and sealing the peripheral part of the first substrate and the second substrate, an electron source disposed in this vacuum vessel, and an ion pump. This manufacturing method of the image display device has a process to join an ion pump vessel 112 to an opening part formed in the first substrate or the second substrate, prior to a process to seal the peripheral part of the first substrate 101 and the second substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing an image display device provided with an ion pump, and more particularly to a method for manufacturing a flat plate type image display device provided with an electron source.

  A large number of electron-emitting devices are arranged on a flat substrate as an electron source, and an electron beam emitted from the electron source is irradiated to a phosphor as an image forming member on the opposite substrate, and the phosphor is caused to emit light to display an image. In the flat display, it is necessary to keep the inside of the vacuum vessel containing the electron source and the image forming member in a high vacuum. When gas is generated inside the vacuum vessel and the pressure rises, the degree of the effect varies depending on the type of gas, but it adversely affects the electron source and reduces the amount of emitted electrons, making it impossible to display a bright image.

  Especially in flat displays, the gas generated from the image display member accumulates in the vicinity of the electron source before reaching the getter installed outside the image display area, and is characterized by local pressure rise and accompanying electron source deterioration. Problem. Japanese Patent Application Laid-Open No. 9-82245 (Patent Document 1) describes that a getter is arranged in an image display area, and the generated gas is immediately adsorbed to suppress deterioration and destruction of the element. Japanese Patent Application Laid-Open No. 2000-133136 (Patent Document 2) shows a configuration in which a non-evaporable getter is disposed in an image display area and an evaporative getter is disposed outside the image display area. Furthermore, as shown in Japanese Patent Laid-Open No. 2000-315458 (Patent Document 3), it has been devised to perform degassing, getter formation, and sealing (vacuum containerization) in a vacuum chamber in a series of operations.

  There are two types of getters: evaporative getters and non-evaporable getters, but evaporative getters have a very high exhaust rate for water and oxygen. Both types of getters have almost no exhaust speed. The argon gas is ionized by the electron beam to become positive ions, which are accelerated by the electric field for accelerating the electrons and collide with the electron source, thereby damaging the electron source. Further, in some cases, an electric discharge may be generated inside, and the device may be destroyed.

  On the other hand, JP-A-5-121012 (Patent Document 4) describes a method of maintaining a high vacuum for a long time by connecting a sputter ion pump to a vacuum container of a flat display. As shown in FIG. 10, this image display device includes a front panel 1201 made of glass or the like having a phosphor screen 1001, and a container body 1005 made of Al or the like, for example, shaped like a box, and a peripheral portion of the front panel 1201. The inside of the container main body 1005 is hermetically sealed by a sealing material 1002 such as an indium seal so as to overlap with the open end, and vacuum is generated by the cooperation of the front panel 1201 and the container main body 1005. A container 1006 is configured. An electrode assembly 1004 having a field emission cathode is disposed on the inner surface of the container body 1005 so as to face the phosphor screen 1001. Reference numeral 1003 denotes an internal electrode formed of an acceleration electrode, a modulation electrode, a deflection electrode, or the like. The container body 1005 is provided with, for example, an opening 107 serving as an exhaust port at the bottom in the vicinity of the electrode assembly 1004, and an ion pump 209 is connected thereto by an ultrahigh vacuum metal seal 1007 such as an ICF flange.

However, in the configuration in which the ion pump 209 is joined to the vacuum vessel 1006 via a metal seal 1007 such as an ICF flange, a heavy metal seal 1007 such as an ICF flange made of a metal material is unevenly distributed on one side of the flat image display device. . Therefore, the load concentrates on the part where the ion pump 209 and the metal seal 1007 are joined to the container body 1005, causing a problem such as deformation or breakage of the part where the metal seal 1007 is attached to the container body 1005, and the vacuum container 1006 leaks. There is a problem that the yield of the flat image display device is lowered.
JP-A-9-82245 JP 2000-133136 A JP 2000-315458 A Japanese Patent Laid-Open No. 5-121012

  The present invention has been made in view of the conventional problems, and there is no occurrence of leakage or the like by a simple process, particularly, there is little change with time in electron source characteristics, high display quality, high reliability, and low cost. It is an object of the present invention to provide a method for manufacturing an image display device.

  The present invention provides a vacuum vessel formed by facing the first substrate and the second substrate and sealing the periphery of the first substrate and the second substrate, and the vacuum vessel disposed in the vacuum vessel. A method of manufacturing an image display device comprising an electron source and an ion pump, wherein the first substrate or the first substrate or the second substrate is sealed prior to the step of sealing the periphery of the first substrate and the second substrate. The present invention relates to a method for manufacturing an image display device, comprising a step of bonding an ion pump container to an opening formed in a second substrate.

  In the step of joining the ion pump container, it is preferable to join the ion pump container to the opening provided in the first substrate or the second substrate without using a flange.

  Furthermore, in the present invention, it is particularly preferable to perform the step of joining the ion pump containers in a reduced pressure or inert gas atmosphere.

  In the manufacturing method of the present invention, since a protrusion such as a flange for metal seal is not formed on the first substrate or the second substrate, even if the ion pump is joined, it is compact and lightweight without taking up space. Ion pump bonding is possible, and the image display device can be reduced in weight and cost. Furthermore, it does not get in the way when sealing the first substrate and the second substrate.

  Further, in the aspect in which the joining portion is joined with frit glass, it is difficult to cause a leak, the strength is sufficiently strong, the manufacturing yield is remarkably improved, and a highly reliable image display device with high impact resistance can be manufactured.

  Further, in the aspect in which the ion pump is bonded in a reduced pressure (vacuum) or in an inert gas, adverse effects on the elements such as elements already formed on the first substrate or the second substrate can be reduced. For example, damage to the electron source due to oxidation or the like is reduced, and a uniform and high-quality image display device can be created. Further, since the electrode of the ion pump is not oxidized, the gas emitted from the ion pump itself is reduced when the ion pump is activated.

  As described above, according to the present invention, it is possible to easily attach an ion pump for adsorbing released gas that is difficult to be adsorbed by the getter when displaying an image. An improved method for manufacturing an image display device can be provided.

  The image display device of the present invention has an electron source in a vacuum container formed by sealing the peripheral portions of the first substrate and the second substrate as described above. Hereinafter, as an image display device, an electron source substrate (hereinafter referred to as a rear plate) provided with an electron source on which electron-emitting devices are arranged, and the electron source substrate are arranged so as to face each other, and a fluorescent film and an anode electrode film are provided. The manufacturing method of the present invention will be described with reference to FIGS. 1 to 7 by taking as an example a configuration having an image forming substrate (hereinafter referred to as a face plate).

<Description of ion pump bonding method>
2 and 3 are examples of schematic views showing the configuration of an image display panel created by the manufacturing method of the present invention. In FIG. 2, a rear plate 101 includes an upper wiring 102, a lower wiring 103, and a surface conduction electron-emitting device (electron source) 104, which is an electron-emitting member having an electron-emitting portion formed inside a transparent glass substrate. The plate 201 includes a phosphor film 202 coated on the inner side of a transparent glass substrate, a metal back film 203 as an anode electrode film, and a getter film 204, and the support frame 105 is bonded to the rear plate 101 with frit glass 106. The ion pump 209 is joined to the opening 107 which is an exhaust port of the rear plate 101 with a frit glass 117. The support frame 105 and the face plate 201 are heat sealed in a vacuum using a metal such as indium 205 to form an envelope that is a vacuum container.

  The ion pump 209 includes an ion pump container 112 having an anode electrode 108, a cathode electrode 109, an anode connection terminal 110, and a cathode connection terminal 111, and a magnet 208. The anode connection terminal 110 and the cathode connection terminal 111 are driven by an ion pump. Is connected to the ion pump power source 207 for wiring.

  The ion pump container contains an anode electrode and a cathode electrode and is connected to and connected to the vacuum container, so that the inside of the container and the vacuum container connected to the container are kept under reduced pressure or vacuum. Usually, the magnet is arranged outside the ion pump container.

  As an ion pump used in the present invention, an evaporator ion pump (Evapor-ion pump) by depositing a getter film on a pump wall, a sputter ion pump (Sputter-ion pump) that uses ions themselves to sputter a getter film ) And the like can be used as appropriate. Among them, a sputter ion pump that has a simple configuration and can be reduced in size and weight can be suitably used.

  The material constituting the ion pump container can be appropriately selected from glass, ceramics, metal, and the like. From the viewpoints of weight reduction and size reduction, a molded glass, a glass structure obtained by bonding a glass plate with frit glass, or the like is preferably used. As the metal used for the cathode, Ti, Ta or the like is preferably used.

  In a conventional method of joining an ion pump with a metal seal as disclosed in Japanese Patent Laid-Open No. 5-121012, it is considered that an ion pump container after a vacuum container is attached. On the other hand, in the present invention, the ion pump container is connected before forming the vacuum container, that is, before sealing the face plate and the rear plate facing each other. When sealing the periphery of the face plate and the rear plate, the support frame may not be used in addition to sealing the face plate and the rear plate via the support frame.

  In Japanese Patent Laid-Open No. 5-121012, a flange portion protruding from a vacuum vessel is provided for a metal seal such as an ICF flange. In the present invention, it is preferable not to provide such a flange portion. In particular, it is preferable to directly join the ion pump container to the opening provided in the face plate or the rear plate. This eliminates the need for a metal seal such as an ICF flange, enables compact and lightweight ion pump joining without taking up space, and enables the image display device to be reduced in weight and cost. Furthermore, even if the ion pump is connected to the rear plate, it is a compact configuration without a metal seal, so it does not get in the way when the face plate and the rear plate are vacuum-sealed.

  For bonding the ion pump to the face plate or the rear plate, a suitable adhesive capable of maintaining a vacuum can be used, but frit glass is preferably used. Since only the frit glass is used for the joining portion, it is difficult for leaks to occur, the strength is sufficiently strong, the manufacturing yield is remarkably improved, and a highly reliable image display device with high impact resistance can be manufactured.

Frit glass that can be used includes SiO ₂ type, Te type, PbO type, V ₂ O ₅ type, and Zn type depending on the component system, and the thermal expansion coefficient α is adjusted by mixing oxide filler into this. It can be suitably used from frit glass. As the refractory _{filler, PbTiO 3, ZrSiO 4, Li} 2 O-Al 2 O 3 -2SiO 2, 2MgO-2Al 2 O 3 -5SiO 2, Li 2 O-Al 2 O 3 -4SiO 3, Al 2 O One type or a mixture of several types of frit glass such as _3— TiO ₂ , 2ZnO—SiO ₂ , SiO ₂ , SnO ₂ can be used as appropriate.

  Baking in a vacuum atmosphere or inert gas atmosphere involves foaming, and adhesion strength and confidentiality cannot be ensured. Therefore, temporary baking is performed in an air atmosphere, heating is performed in a vacuum atmosphere, and the frit glass is defoamed, and then bonded. Is preferred.

  Since frit glass is a powder, it is made into a paste using an organic binder and applied to the joint. As a method for applying the pasted frit glass, a dispensing method using air pressure is generally used, but a dipping method, a printing method, or the like can be appropriately used. Moreover, the preform goods which formed in advance on the ring-shaped and strip-shaped sheet | seat, and gave provisional baking and degassing can also be used.

When the frit glass is fired, the frit glass becomes a hard elutriate shape at the firing temperature, so that a pressing pressure for crushing the frit glass is necessary, and a pressing pressure of 0.5 g / mm ² or more is preferably used.

  First, the case where the ion pump container is joined to the face plate will be described. In this case, the ion pump container can be joined at various stages before forming the vacuum container, but on the inner surface of the face plate, at least a fluorescent film and a metal back are formed as an image forming member, Usually, when the getter film is provided after the image forming member is formed, it is preferable to join the ion pump container at a stage before the getter film is formed.

  Next, the case where an ion pump container is joined to a rear plate is demonstrated. Since an electron-emitting device is formed on the rear plate, a forming process and, if necessary, an activation process are performed after forming a conductive thin film between the device electrodes as will be described later. The ion pump container can be attached at various stages. For example, (i) after forming a conductive thin film and before forming, (ii) after forming and before activation, (iii) forming and activation. After (when performing) (that is, after completion of the electron-emitting device as the electron source), it can be performed at any stage. Preferably, the ion pump container is joined after completion of the electron-emitting device of (iii).

  In the present invention, the ion pump container is particularly preferably joined in a reduced pressure (vacuum) or in an inert gas atmosphere. By joining the ion pump container in a reduced pressure (vacuum) or in an inert gas, damage to members such as elements completed by the time of joining can be reduced. This aspect is particularly effective when the ion pump container is joined after the electron source is formed on the rear plate (above (iii)), damage to the electron source due to oxidation or the like is reduced, and the display quality is uniform. A high image display device can be created.

  Further, since the electrode of the ion pump is not oxidized, the gas emitted from the ion pump itself is reduced when the ion pump is activated. This effect is similarly exhibited when an ion pump container is connected to the face plate.

The degree of reduced pressure (vacuum) is preferably 10 ⁻² Pa or less, more preferably 10 ⁻⁴ Pa or less. As the inert gas, Ar, N ₂ , Xe, Ne, He, or the like can be appropriately selected and used. Among them, Ar, N _{2 and the} like that are easy to handle are preferably used.

  Next, an example of a method of joining the ion pump container 112 with the frit glass 117 to the rear plate 101 with the support frame 105 joined with the frit glass 106 will be described with reference to FIG.

  As shown in FIG. 1, an ion pump container 112 in which a frit glass 117 is coated on an opening 107 which is an exhaust port on the surface of the rear plate 101 opposite to the surface on which the surface conduction electron-emitting device 104 is formed, an ion The support base 115 for holding the pump container 112 and the weight 116 for applying a load to the support base 115 are installed in the vacuum baking furnace 114 and heated while being evacuated from the exhaust port 113 under reduced pressure to melt the frit glass 117. And join. The weight 116 is for applying a load to the frit glass 117. When the frit glass 117 is heated and melted together with the support table 115, the weight 116 prevents the support frame 105 from being displaced and presses the frit glass 117 to a certain thickness. .

  In this description, an example in which the frit glass is heated and melted in a vacuum atmosphere when the ion pump is joined to the rear plate is shown. However, an inert gas atmosphere can be used by introducing an inert gas after exhausting under reduced pressure. . For example, as shown in FIG. 8, a gas introduction port 801 for introducing an inert gas can be piped into the vacuum baking furnace 114 so that it can be heated in an inert gas atmosphere.

  Such a joining process is incorporated into the manufacturing process of the image display device described below.

<Description of the entire image display device>
The entire image display apparatus will be described. In FIG. 3, a modulation signal input is applied from the outer terminal (not shown) through the lower wiring 103, a scanning signal input is applied through the upper wiring 102, and a high voltage is applied from the high voltage terminal Hv (not shown) to display an image. Is. The ion pump 209 is joined to the vacuum vessel at the exhaust port 107, and exhausts the emitted gas by being driven by a driving power source (not shown). In the figure, reference numeral 104 denotes a surface conduction electron-emitting device which is an electron source, and 102 and 103 denote upper wiring (Y direction wiring) and lower wiring (X direction) connected to a pair of device electrodes of the surface conduction type emitting device. Wiring).

  FIG. 4A is a schematic diagram showing a part of the surface conduction electron-emitting device 104 installed on the rear plate 101 and wiring for driving the electron source. In the figure, reference numeral 103 denotes a lower wiring, reference numeral 102 denotes an upper wiring, and reference numeral 401 denotes an interlayer insulating film that electrically insulates the upper wiring 102 and the lower wiring 103.

  FIG. 4B shows the structure of the surface conduction electron-emitting device 104 in FIG. 4A in an enlarged view from A to A ′, 402 and 403 are device electrodes, 405 is a conductive thin film, and 404 is an electron. It is a discharge part.

First, an example of an image display device using a surface conduction electron-emitting device will be described.
2 and 3, the rear plate 101 is made of soda glass, borosilicate glass, quartz glass, a glass substrate on which SiO ₂ is formed, and an insulating substrate such as a ceramic substrate such as alumina. As 201, a glass substrate such as transparent soda glass is used.

As a material for the device electrode (corresponding to 402 and 403 in FIG. 4) of the surface conduction electron-emitting device 104, a general conductor is used. For example, Ni, Cr, Au, Mo, W, Pt, Ti, Al , Cu, Pd and other metals or alloys, and Pd, Ag, Au, RuO ₂ , Pd—Ag metals or metal oxides and printed conductors made of glass, etc., In ₂ O ₃ —SnO _2, etc. The material is appropriately selected from a transparent conductor and a semiconductor material such as polysilicon.

  The electrode material can be formed by vacuum evaporation, sputtering, chemical vapor deposition, etc., and the desired shape can be obtained by photolithography (including processing techniques such as etching and lift-off). Or by other printing methods. In short, it is only necessary that the element electrode material can be formed into a desired shape, and the manufacturing method is not particularly limited.

  The element electrode interval L shown in FIG. 4A is preferably several hundred nm to several hundred μm. Since it is required to fabricate with good reproducibility, a more preferable inter-element electrode L is several μm to several tens μm. The element electrode length W is preferably several μm to several hundred μm from the resistance value of the electrode, electron emission characteristics, and the like, and the film thickness of the element electrodes 402 and 403 is preferably several tens nm to several μm. In addition to the configuration shown in FIG. 4B, a configuration in which the conductive thin film 405 and the element electrodes 402 and 403 are formed in this order on the rear plate 101 may be employed.

In order to obtain good electron emission characteristics, the conductive thin film 405 is particularly preferably a fine particle film composed of fine particles, and the film thickness is determined by step coverage to the device electrodes 402 and 403 and resistance between the device electrodes 402 and 403. Although it is set depending on the value and energization forming conditions described later, it is preferably 0.1 nm to several hundred nm, and particularly preferably 1 nm to 50 nm. The resistance value is a value of Rs of 10 ² to 10 ⁷ Ω / □. Rs is an amount that appears when the resistance R of a thin film having a thickness of t, a width of w, and a length of l is set as R = Rs (l / w).

The material forming the conductive thin film 405 includes metals such as Pd, Pt, Ru, Ag, Au, Ti, In, Cu, Cr, Fe, Zn, Sn, Ta, W, Pb, PdO, SnO ₂ , Oxides such as In ₂ O ₃ , PbO, Sb ₂ O ₃ , borides such as HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB ₄ , GdB ₄ , TiC, ZrC, HfC, TaC, SiC, WC, etc. Carbide, nitrides such as TiN, ZrN, and HfN, semiconductors such as Si and Ge, and carbon.

  The fine particle film described here is a film in which a plurality of fine particles are aggregated, and the fine structure is not only in a state where the fine particles are individually dispersed and arranged, but also in a state where the fine particles are adjacent to each other or overlap each other (island-like shape). The diameter of the fine particles is 0.1 nm to several hundred nm, preferably 1 nm to 20 nm.

  The conductive thin film 405 is manufactured by applying an organic metal solution to the rear plate 101 provided with the device electrodes 402 and 403 and drying it to form an organic metal thin film. The organometallic solution here refers to a solution of an organometallic compound whose main element is the metal forming the conductive thin film 405 described above.

  Thereafter, the organometallic thin film is heated and baked and patterned by lift-off, etching, or the like, so that the conductive thin film 405 is formed. Note that the method for forming the conductive thin film 405 has been described by using an organic metal solution coating method. However, the method is not limited to this, but a vacuum deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method is used. It may be formed by, for example.

  The electron emission portion 404 is a high-resistance crack formed in a part of the conductive thin film 405, and is formed by a process called energization forming. The energization forming is performed by energizing between the element electrodes 402 and 403 from an electrode (not shown) to locally destroy, deform or alter the conductive thin film 405 to change the structure. The voltage waveform at the time of energization is particularly preferably a pulse waveform, and there are a case where a voltage pulse having a constant pulse peak value is applied continuously and a case where a voltage pulse is applied while increasing the pulse peak value. The forming process is not limited to the energization process, and a process of forming a high resistance state by generating an interval such as a crack in the conductive thin film 405 may be used.

  It is desirable to perform a process called activation on the element for which energization forming has been completed. The activation process is a process for significantly changing the device current (current flowing between the device electrodes 402 and 403) and the emission current (device current emitted from the electron emission unit 404). For example, it can be performed by repeating the application of pulses in an atmosphere containing a carbon compound gas such as an organic substance gas, similarly to the energization forming. The preferable pressure of the organic material at this time varies depending on the shape of the vacuum container in which the element is disposed, the type of the organic material, and the like, and thus is appropriately set according to circumstances.

  By the activation treatment, an organic thin film made of carbon or a carbon compound is deposited on the conductive thin film 405 from an organic substance present in the atmosphere. The activation process is completed, for example, when the emission current is saturated while measuring the device current and the emission current. The voltage pulse to be applied is preferably an operation driving voltage at the time of image display or a voltage higher than that.

  The formed crack may have conductive fine particles having a particle diameter of 0.1 nm to several tens of nm. The conductive fine particles contain at least a part of the elements constituting the conductive thin film 405. In addition, the electron emitting portion 404 and the conductive thin film 405 in the vicinity thereof may contain carbon and a carbon compound.

  The surface conduction electron-emitting device 104 may be a flat type in which the surface conduction electron-emitting device 104 is formed in a planar shape on the surface of the rear plate 101, or a vertical type formed on a surface perpendicular to the rear plate 101. Furthermore, if an image display device using an electron-emitting device such as a thermionic source using a hot cathode or a field emission type electron-emitting device is taken as an example, the device is not particularly limited as long as the device emits electrons. Not.

  Next, the arrangement of the surface conduction electron-emitting devices 104 and the wiring for supplying an electric (electric power) signal for image display to the devices will be described with reference to FIGS. As wiring examples, two orthogonal wirings (Y: upper wiring 102 and X: lower wiring 103, which are referred to as simple matrix wirings) can be used, and the device electrode 402 of the surface-type electron-emitting device 104, Each of the 403 is connected to the element electrode 402 from the upper wiring 102 and to the element electrode 403 from the lower wiring 103. The upper wiring 102 and the lower wiring 103 can be composed of a conductive metal or the like formed by using a printing method such as a vacuum deposition method, a screen printing method, an offset printing method, a sputtering method, and the like. The thickness and width are appropriately designed. Among them, it is preferable to use a printing method that is inexpensive to manufacture and easy to handle.

  The conductive paste to be used includes noble metals such as Ag, Au, Pd, Pt, etc., and base metals such as Cu, Ni alone or any combination thereof, and after printing the wiring pattern with a printing machine, the temperature is 500 ° C. Firing at the above temperature. The thickness of the formed upper and lower printed wirings is about several μm to several hundred μm. Further, at least where the upper wiring 102 and the lower wiring 103 overlap, an interlayer insulating film 401 having a thickness of about several to several hundreds of μm printed and baked (at 500 ° C. or higher) is sandwiched to obtain electrical insulation.

  The end portion of the upper wiring 102 in the Y direction applies a scanning signal which is an image display signal for scanning the Y-side row of the surface conduction electron-emitting device 104 in accordance with the input signal. This is electrically connected to the drive circuit section. On the other hand, the end portion of the lower wiring in the X direction applies a modulation signal which is an image display signal for modulating each column of the surface conduction electron-emitting devices 104 in accordance with an input signal. It is electrically connected to the drive circuit section.

  The phosphor film 202 applied to the inside of the face plate 201 is composed of only a single phosphor in the case of monochrome. However, when displaying a color image, the phosphor emitting three primary colors of red, green, and blue is black conductive. The structure is separated by materials. The black conductive material is called a black stripe or a black matrix depending on its shape. As a manufacturing method, there are a photolithography method using a phosphor slurry or a printing method. Patterning is performed on pixels of a desired size to form phosphors of respective colors.

  A metal back film 203 as an anode electrode film is formed on the phosphor film 202. The metal back film 203 is made of a conductive thin film such as Al. The metal back film 203 reflects the light traveling in the direction of the rear plate 101 serving as an electron source out of the light generated in the phosphor film 202 to improve the luminance. Further, the metal back film 203 imparts conductivity to the image display area of the face plate 201 to prevent electric charges from accumulating, and serves as an anode electrode for the surface conduction electron-emitting device 104 of the rear plate 101. It is. The metal back film 203 also has a function of preventing the phosphor film 202 from being damaged by ions generated by ionizing the gas remaining in the face plate 201 and the image display device with an electron beam.

  Since a high voltage is applied to the metal back film 203, it is electrically connected to a high voltage application device.

  The support frame 105 hermetically seals the space between the face plate 201 and the rear plate 101. The support frame 105 is bonded to the face plate 201 using In (indium) 205, and is bonded to the rear plate 101 by the frit glass 106 to constitute a sealed container as an envelope. The support frame 105 may be made of the same material as the face plate 201 and the rear plate 101, or glass, ceramics, metal, or the like having a coefficient of thermal expansion substantially equal to those.

  The support frame 105 is preferably bonded to the rear plate 101 with the frit glass 106 before the electron emission portion 404 is formed, that is, before forming and activating. In addition, when joining with In, it is preferable to join when producing a sealed container with the face plate 201, the rear plate 101, and the support frame 105.

  Next, the ion pump container 112 is joined with the frit glass 117 to the rear plate 101 to which the support frame 105 is joined with the frit glass 106. As already described with reference to FIG. 1, the ion pump container 112 coated with the frit glass 117 is placed on the exhaust port 107 on the surface of the rear plate 101 opposite to the surface on which the surface conduction electron-emitting devices 104 are formed. And installed in a vacuum bake furnace 114, while holding the ion pump vessel 112 with the support base 115 and applying a load to the support base 115 with the weight 116, the frit glass 117 is heated while being exhausted from the exhaust port 113 under reduced pressure. Are melted and joined.

  As described above, the ion pump container may be joined to the rear plate in an inert gas.

The frit glass for joining the ion pump vessel is as described above, but the same frit glass can be used for joining the vacuum vessel and other joining. That is, frit glass includes SiO ₂ type, Te type, PbO type, V ₂ O ₅ type, and Zn type from its component system, and the thermal expansion coefficient α is adjusted by mixing the oxide filler therein. It can be suitably used from frit glass. As the refractory _{filler, PbTiO 3, ZrSiO 4, Li} 2 O-Al 2 O 3 -2SiO 2, 2MgO-2Al 2 O 3 -5SiO 2, Li 2 O-Al 2 O 3 -4SiO 3, Al 2 O One type or a mixture of several types of frit glass such as _3— TiO ₂ , 2ZnO—SiO ₂ , SiO ₂ , SnO ₂ can be used as appropriate.

  Baking in a vacuum atmosphere or inert gas atmosphere involves foaming, and adhesion strength and confidentiality cannot be ensured. Therefore, temporary baking is performed in an air atmosphere, heating is performed in a vacuum atmosphere, and the frit glass is defoamed, and then bonded. Is preferred.

  Since frit glass is a powder, it is made into a paste using an organic binder and applied to the joint. As a method for applying the pasted frit glass, a dispensing method using air pressure is generally used, but a dipping method, a printing method, or the like can be appropriately used. Moreover, the preform goods which formed in advance on the ring-shaped and strip-shaped sheet | seat, and gave provisional baking and degassing can also be used.

When the frit glass is fired, the frit glass becomes a hard elutriate shape at the firing temperature, so that a pressing pressure for crushing the frit glass is necessary, and a pressing pressure of 0.5 g / mm ² or more is preferably used.

  After preparing the rear plate 101 and the face plate 201 to which the support frame 105 and the ion pump container 112 are joined, the substrate is cleaned with an electron beam, the getter film 204 is deposited, and a sealed container is formed as an envelope (the support frame 105 and The joining of the rear plate 101 and the face plate 201 to which the ion pump container 112 is joined is performed in a state where the vacuum atmosphere is maintained.

  FIG. 6 is an overall conceptual diagram of a vacuum processing apparatus used in the present invention. The load chamber 602 is used to carry in and out the substrate, and performs processing such as baking, getter film formation, and sealing in the vacuum processing chamber 603. The gate valve 605 is used to partition the load chamber 602 and the vacuum processing chamber 603, and the substrate is transferred by the transfer jig 604. The load chamber 602 is evacuated by the evacuation unit 1 (606), and the vacuum processing chamber 603 is evacuated by the evacuation unit 2 (607). The substrate is carried in / out through the carry-in / out port 601.

FIG. 7 is a conceptual diagram of processes performed in the vacuum processing chamber 603, 706 is an upper hot plate, 707 is a lower hot plate, and the other components are the same as those described above. As shown in FIG. 6, the face plate 201 on which the phosphor film 202 and the metal back film 203 are formed, and the rear plate 101 to which the support frame 105 and the ion pump container 112 are joined together, are opened to the atmosphere. The unloading entrance 601 of 602 is opened, these substrates are placed on the transfer jig 604, and the pressure is exhausted to about 10 ⁻⁴ Pa or less. Next, the gate valve 605 leading to the vacuum processing chamber 603, which has been evacuated to about 10 ⁻⁵ Pa by the exhaust means 2 (607) in advance, is opened, and the transfer jig 604 is transferred to the vacuum processing chamber 603, and then the gate valve Close 605.

  As the material for the getter film, metals such as Ba, Mg, Ca, Ti, Zr, Hf, V, Nb, Ta, and W, and alloys thereof can be used, but preferably alkaline earths with low vapor pressure and easy handling. Metals such as Ba, Mg, Ca, and alloys thereof are appropriately used. Of these, Ba or an alloy containing Ba, which is industrially easy to manufacture, such as being inexpensive and capable of easily evaporating from a metal capsule holding a getter material, is preferable.

  Next, the outline of the manufacturing process performed in the vacuum processing chamber 603 is shown in FIG. As shown in the figure, the face plate 201 and the rear plate 101 carried into the vacuum processing chamber 603 are held by an upper hot plate 706 and a lower hot plate 707, respectively, and degassed by baking. At this time, the rear plate 101 is on the upper hot plate 706 side, and an escape portion 708 is formed in the upper hot plate 706 so that the ion pump container 112 joined to the rear surface of the rear plate 101 is not broken. The baking temperature can be appropriately selected from 50 ° C. to 400 ° C., and it is better to process at a high temperature as long as the heat resistance of the member allows. Next, the rear plate 101 is also raised while letting the hot plate escape upward and downward, and a space is provided on the upper surface of the face plate 201. The lid-shaped jig 703 on one side is moved onto the face plate 201 in this space. A current is supplied from an external power source through the getter brush-like contact electrode 705, getter wiring terminal 704, and getter wiring 702, and the getter is heated to flash to form a getter film 204 on the faceplate 201 on the half surface. .

  Similarly, a getter film 204 is formed on the remaining half surface. Next, the lid-shaped jig 703 is released, and the face plate 201 filled with In alloy or the like at a predetermined position between the upper hot plate 706 and the lower hot plate 707, the support frame 105, and the ion pump container 112 are joined in advance. A certain rear plate 101 is sandwiched and a weight is applied while heating to melt the In alloy, and a vacuum container (vacuum envelope) surrounded by the face plate 201, the rear plate 101, and the support frame 105 is created.

  In the case of an image display device for color display, the face plate 201 and the rear plate 101 are aligned and vacuumed so that the surface conduction electron-emitting devices 104 and the pixels (not shown) of the phosphor film 202 correspond one-to-one. Seal. Then, it cools to about room temperature. Next, the upper hot plate 706 and the lower hot plate 707 are relieved up and down again, and the sealed container is transferred to the load chamber 602 and taken out from the loading / unloading port 601.

   Through the above steps, a space surrounded by the rear plate 101, the support frame 105, and the face plate 201 is formed as a vacuum container that can be hermetically maintained at a pressure equal to or lower than atmospheric pressure. Next, the magnet 208 is attached to the ion pump container 112, and the ion pump power source 207, the anode connection terminal 110, and the cathode connection terminal 111 are connected by wiring.

  By the series of processes described above, the vacuum container becomes an image display device. In the image display device manufactured as described above, the ion pump power source 207 is turned on and the ion pump 209 is operated. Next, the scanning drive means connected to the upper wiring 102 and the modulation driving means connected to the lower wiring 103 provide scanning signals and modulation signals as image signals to each surface conduction electron-emitting device 104.

  A driving voltage, that is, an electric signal is applied as a difference voltage between them, an electric current flows through the conductive thin film 405, and electrons are emitted as an electron beam according to the electric signal from the electron emitting portion 404, a part of which is a crack. , Accelerated by a high voltage (1 to 10 KV) applied to the metal back film 203 and the phosphor film 202, collides with the phosphor film 202, causes the phosphor to emit light, and displays an image. The purpose of the metal back film 203 here is to improve the luminance by specularly reflecting the light on the inner surface side of the phosphor to the face plate 201 side, and as an electrode for applying an electron beam acceleration voltage. For example, the phosphor film 202 is protected from damage caused by collision of negative ions generated in the sealed container.

  The ion pump 209 starts to operate at an applied voltage of about 1 KV. However, when the applied voltage is increased, the power consumption increases and an adverse effect such that insulation measures must be taken surely increases. Therefore, 3 to 5 KV is suitably used as a voltage for driving the ion pump 209 efficiently.

When an image is displayed, electrons are emitted and gas is released from members in the image display device. Of these gases, gases such as H ₂ , O ₂ , CO, and CO ₂ that easily damage the electron-emitting devices are adsorbed by the getter film 204. On the other hand, Ar, which is an inert gas, is not adsorbed by the getter film 204 but is exhausted by the ion pump 209 attached to the rear plate 101 so that the Ar partial pressure is 10 ⁻⁶ Pa or less, which is a pressure that affects the device. It is possible to suppress the damage to the element due to Ar (mainly element destruction caused by ionized Ar ion sputtering). Therefore, an image display apparatus having a long life without deterioration in luminance even when an image is displayed for a long time can be obtained. Further, since the small and light ion pump is directly joined to the rear plate by frit glass, the image display device is thin and lightweight.

  Note that the same effect can be obtained when the ion pump 209 is joined not only to the rear plate 101 but also to the face plate 201.

  In addition to surface conduction electron-emitting devices as the above-mentioned electron sources, those using field-emission electron-emitting devices, simple matrix types, and electron beams emitted from electron sources using control electrodes (grid electrode wiring) The image display device manufacturing method of the present invention can also be applied to an image display device that controls and displays an image. As long as it is a device / apparatus that needs to keep the inside of the sealed container below atmospheric pressure, the manufacturing method of the image display device of the present invention can be applied.

  Hereinafter, the present invention will be specifically described using examples.

<Example 1>
An ion pump bonding method, which is a method for manufacturing an image display device, will be described with reference to FIG. 1 and a method for producing a vacuum container as an image display device will be described with reference to FIGS.

First, a method for producing a sealed container as an image display device will be described. A soda glass (SL: manufactured by Nippon Sheet Glass Co., Ltd.) having a thickness of 2.8 mm and a size of 240 mm × 320 mm as the rear plate 101 and a thickness of 2.8 mm and a size of 190 mm × 270 mm as the face plate 201 is used. In this example, an 8 mmφ exhaust port 107 was opened outside the image area and inside the glass frame 105.
The device electrodes 402 and 403 of the surface conduction electron-emitting device 104 which is an electron source on the rear plate 101 are formed by depositing platinum by a vapor deposition method and using a photolithography technique (including processing techniques such as etching and lift-off methods). The film was processed into a shape having a film thickness of 100 nm, an electrode interval L = 2 μm, and an element electrode length W = 300 μm.

Next, the width of the upper wiring 102 (100 lines) is 500 μm and the thickness is 12 μm, the width of the lower wiring 103 (600 lines) is 300 μm and the thickness is 8 μm on the rear plate 101, and printing and baking Ag paste ink respectively. Formed. A lead-out terminal to an external drive circuit was created in the same manner. The interlayer insulating layer 401 was printed and baked (baking temperature 550 ° C.) with a glass paste, and the thickness was 20 μm.
Next, the rear plate 101 was washed, sprayed with an ethyl alcohol diluted solution of DDS (dimethyldiethoxysilane: manufactured by Shin-Etsu Chemical Co., Ltd.) by a spray method, and heated and dried at 120 ° C. The conductive thin film 405 is dissolved in 85% water and 15% isopropyl alcohol in an aqueous solution containing 15% by weight of palladium-proline complex, and an organic palladium-containing solution is applied by an inkjet coating apparatus, followed by heat treatment at 350 ° C. for 10 minutes. Then, a fine particle film made of PdO (palladium oxide) was formed, and a conductive thin film 405 having a diameter of 60 μm was obtained.

Next, the support frame 105 had a thickness of 2 mm, an outer shape of 150 mm × 230 mm, a width of 10 mm, and a material of soda glass (SL; manufactured by Nippon Sheet Glass). LS7305 (manufactured by Nippon Electric Glass Co., Ltd.), which is a sheet-like frit glass 106 having the same shape as the support frame 105, is installed at the joining position of the rear plate 101, and a load of 1 g / mm ² is applied from above the support frame 105. And installed in a clean oven, heated at 430 ° C. for 30 minutes, and joined. At the same time, the high-voltage terminal was joined to the rear plate 101 in the same manner as the support frame 105.

  The rear plate 101 produced as described above was subjected to the following forming and activation using the vacuum exhaust apparatus shown in FIG. First, as shown in FIG. 5, the rear plate 101 placed on the substrate stage 503 was taken out and the region excluding electrodes (not shown) was sealed with an O-ring 502 and covered with a vacuum vessel 501. The substrate stage 503 has an electrostatic chuck 504 for fixing the rear plate 101 on the stage, and 1 KV is applied between the ITO film 510 formed on the back surface of the rear plate 101 and the electrode inside the electrostatic chuck. The rear plate 101 was chucked by applying.

  Next, the inside of the vacuum vessel was evacuated by a magnetic levitation turbomolecular pump 505, and the steps after the forming step were performed as follows.

First, the inside of the vacuum vessel was evacuated to 10 ⁻⁴ Pa, a rectangular waveform with a pulse width of 1 msec was sequentially applied to the upper wiring 102 at a scroll frequency of 10 Hz, and the voltage was set to 12V. The lower wiring 103 was installed on the ground. A mixed gas of hydrogen and nitrogen (2% H ₂ , 98% N ₂ ) was introduced into the vacuum vessel, and the pressure was maintained at 1000 Pa. The gas introduction was controlled by a mass flow controller 508, while the exhaust flow rate from the vacuum vessel was controlled by an exhaust device and a conductance valve 507 for flow rate control. When the value of the current flowing through the conductive thin film 405 became almost zero, voltage application was stopped. The mixed gas of H ₂ and N ₂ inside the vacuum vessel was exhausted to complete the forming, and cracks were formed in all the conductive thin films 405 of the rear plate 101 to create the electron emission portion 404.

Next, an activation process was performed. After evacuating the inside of the vacuum vessel 501 to 10 ⁻⁵ Pa, tolunitrile (molecular weight: 117) was introduced into the vacuum vessel at a partial pressure up to 1 × 10 ⁻⁴ Pa. A voltage was applied to the upper wiring 102 in 10 lines by time division (scrolling). As for the voltage application conditions, all elements were activated using a bipolar rectangular wave having a peak value of ± 14 V and a pulse width of 1 msec.

  After the activation was completed, the tolunitrile remaining in the vacuum vessel 501 was exhausted, and then returned to atmospheric pressure, and the rear plate 101 was taken out.

In the ion pump, the plate-like anode electrode 108 and cathode electrode 109 are made of Ti, and these are arranged in an ion pump container 112 made of glass, and the anode connection terminal 110 wired to the anode electrode 108 and the cathode electrode 109 respectively. A bipolar sputtering ion pump having a structure having a cathode connection terminal 111 outside the ion pump vessel 112 was used. As the ion pump container 112, a blue plate glass formed and processed with a size (W30 mm × D30 mm × H30 mm) that can accommodate the anode electrode 108 and the cathode electrode 109 was used. ASF1304 (manufactured by Asahi Glass Co., Ltd.) was applied to frit glass at the outlet of the ion pump container 112 of the anode terminal 110 and the cathode terminal 111, and heated and baked at 450 ° C. for 30 minutes. Thereafter, a leak check was performed using a He leak detector, but the detection limit value was 10 ⁻¹² Pa · m ³ / sec or less.

Next, a paste made of VS-2 (manufactured by Nippon Electric Glass Co., Ltd.), which is frit glass, is pasted with an organic binder at locations (four sides of the joint surface of the container) to be joined to the rear plate 101 of the ion pump container 112. It was applied with a dispenser. Temporary firing was performed by heating at 400 ° C. for 30 minutes, and further, degassing firing was performed at 480 ° C. for 3 hours under reduced pressure as a degassing treatment. After returning to room temperature, a leak check was performed with a He leak detector, and the detection limit value was 10 ⁻¹² Pa · m ³ / sec or less.

Next, in order to connect the anode electrode 108 and the anode electrode terminal 110 and the cathode electrode 109 and the cathode electrode terminal 111, welding was performed with a YAG laser. When a leak check was performed with a He leak detector, the detection limit value was 10 ⁻¹² Pa · m ³ / sec or less.

Next, as shown in FIG. 1, an ion pump container 112 in which a frit glass 117 is applied on a surface of the rear plate 101 provided on a support (not shown) in the vacuum baking furnace 114 provided with an exhaust port 107. Put. The weight 116 is placed on the support base while the ion pump container 112 is pressed by the support base 115. The weight 116 was 0.5 g / mm ² on the joining surface of the frit glass 117.

By evacuating from the vacuum exhaust port 113 of the vacuum baking furnace 114, the pressure was reduced to 10 ⁻⁴ Pa, and the mixture was heated to 390 ° C. and held for 80 minutes. When the temperature returned to room temperature, atmospheric pressure was applied and the rear plate 101 was taken out. When all the surface conduction electron-emitting devices 104 were observed, no device was damaged. On the other hand, when the substrate was baked in the air instead of under reduced pressure, the device was damaged by burning. When a leak check of the joint portion was performed using a He leak detector, the detection limit value was 10 ⁻¹² Pa · m ³ / sec or less.

Although 100 sheets were manufactured repeatedly, no leaks occurred (yield 100%).
As a comparison, when a metal seal 1007 as shown in FIG. 10 was attached and an ion pump container was attached to the rear plate, leakage occurred in 50 out of 100 sheets (yield 50%).

  Moreover, the weight increase by attaching the ion pump container 112 was 10g. On the other hand, in the comparative example, there was a weight increase of 500 g by joining with the metal seal 1007. The size of this example was 30 mm from the rear plate 101 surface, while the comparative example was 100 mm.

  Next, In was applied on the support frame 105, and spacers 206 were installed on the upper wiring 102 every 20 lines. The spacer 206 was provided with an insulating base outside the image display area, and was adhered and fixed with Aron Ceramic W (manufactured by Toagosei Co., Ltd.).

  On the other hand, the face plate 201 is a metal back film 203 made of an aluminum thin film formed by alternately forming striped phosphors (R, G, B) and black conductive materials (black stripes) on the phosphor film 202. A thickness of 200 nm was produced. Next, In was applied on a silver paste pattern provided in advance on the peripheral edge of the face plate 201.

The rear plate 101 to which the support frame 105 and the ion pump container 112 are joined, and the face plate 201 are set on the transfer jig 604, and the carry-in / out port 601 of the vacuum processing apparatus shown in FIG. To do. After closing the loading / unloading port 601, the pressure in the load chamber 602 is lowered to about 3 × 10 ⁻⁵ Pa, the gate valve 605 is opened, and the transfer jig 604 is preliminarily set to about 1 × 10 ⁻⁵ Pa by the exhaust means 2 607. The pressure was lowered into the vacuum processing chamber 603 and the gate valve 605 was closed. After the transport jig 604 was in a predetermined position, the upper hot plate 706 and the lower hot plate 707 were brought into close contact with the rear plate 101 and the face plate 201 as shown in FIG. 7, and heated at 300 ° C. for 1 hour.

  Next, the rear plate 101 and a part of the transport jig 604 that supports the rear plate 101 were raised upward about 30 cm together with the upper hot plate 706. Next, one lid-shaped jig 703 was moved onto the face plate 201 in the space between the rear plate 101 and the face plate 201. A current of 12 A was sequentially applied to a Ba getter container installed on the inner ceiling of the lid-like jig 703 every 10 seconds to deposit a Ba film on the metal back film 203 of the face plate 201 by 50 nm. The lid-shaped jig 703 was returned to its original position, and the same operation was performed on the other lid-shaped jig 703.

Next, the lid-shaped jig 703 is returned to the original position, the rear plate 101, the support tool that is a part of the transport jig 604, and the upper hot plate 706 are lowered, and the upper hot plate 706 and the lower hot plate 707 are heated to 180 ° C. did. After holding at 180 ° C. for 3 hours, the rear plate 101, the support tool that is a part of the transport jig 604, and the upper hot plate 706 are further lowered, and the rear plate 101, the face plate 201, and the support frame 105 are loaded with 60 kg / cm ² . I applied. In this state, the heating was stopped, the mixture was naturally cooled, the temperature was lowered to room temperature, and sealing was completed.

  The gate valve 605 was opened, the vacuum container was carried out from the vacuum processing chamber 603 to the load chamber 602, the gate valve 605 was closed, the pressure was returned to the atmosphere in the load chamber 602, and then the sealed container was carried out from the carry-in / out port 601. . In the sealed container produced as described above, no cracks or cracks occurred. The sealed container is connected to a voltage application device and a high voltage application device so that an image can be displayed, and the anode connection terminal 110 and the cathode connection terminal 111 of the ion pump container 112 are connected to the ion pump power source 207 by wiring. The magnet 208 was attached and the image display apparatus was assembled.

  Next, a voltage of 5 KV was applied to the ion pump power source 207 to drive the ion pump 209 with a magnetic field of 1400 G or more at the center of the ion pump. Further, an image signal of 16.7 μsec, 60 Hz, and 15 V is supplied from the voltage application device connected to the image display device to the electron-emitting device, and at the same time, a high voltage of 10 KV is applied by the high-voltage application device, so that the surface conduction electron-emitting device 104 is formed. Light was emitted, and the image display device displayed an image.

  For the life evaluation, the image display device was continuously displayed and the time until the luminance was reduced to half was 15000 hours.

  Further, when an impact resistance test was performed as a reliability test, in the comparative example, 5 out of 10 panels leaked and image display could not be performed, but in this embodiment, no leak occurred in one panel. The impact resistance test is a drop impact test based on JIS C 0041. The conditions are room temperature (23 ± 5 ° C., 50 to 70% RH), half-sine wave pulse, acceleration 50G, operation time 11 ms, acceleration direction 6 directions. The test was repeated three times in each direction.

  Compared with the case where the ion pump container is connected to the rear plate using a metal seal as shown in FIG. 10 (referred to as a comparative example), the manufacturing yield of the image display device is mainly leaked when the metal seal is attached. The overall yield was 30% for the reason, but it was 95% in this example. Moreover, when the thickness of the image display apparatus after container mounting was measured, it was able to be made thin about 100 mm compared with the comparative example. Moreover, when the total weight was measured, it was 500g lighter than the comparative example.

  The image display device created in the present example is enclosed in a glass container in which an ion pump is joined to the rear surface of the rear plate with a frit, has no leakage, and is small, light, highly reliable, and low in cost. is there. Furthermore, since an ion pump can be easily attached, an image display device having a long life can be produced.

<Example 2>
As a second embodiment, a manufacturing method in which the ion pump container 112 is bonded to the rear plate 101 in an Ar atmosphere will be described. FIG. 8 shows a method of manufacturing the image display device according to this embodiment. The difference from the first embodiment is that the ion pump container 102 is joined with a frit glass 117 in an Ar atmosphere.

A method for creating the image display apparatus of this embodiment will be described below. The ion pump was produced in the same manner as in Example 1. In all steps as in Example 1, a leak check was performed with a He leak detector, but the detection limit value was 10 ⁻¹² Pa · m ³ / sec or less.

  Next, as shown in FIG. 8, an ion pump container 112 in which a frit glass 117 is applied on the surface of the rear plate 101 provided on a support (not shown) in the vacuum baking furnace 114 provided with the exhaust port 107. Put. The weight 116 is placed on the support base while the ion pump container 112 is pressed by the support base 115. The weight 116 was set to a weight of 0.5 g / mm 2 on the joint surface of the frit glass 117.

After evacuating the vacuum baking furnace 114 from the vacuum exhaust port 113, the pressure was reduced to 10 ⁻⁴ Pa, and then Ar was introduced from the gas inlet 801 until the pressure reached 1013 hPa to maintain the pressure. Then, after heating similarly to Example 1, when it returned to room temperature, the gas inlet was closed and the rear plate 101 was taken out. When all the surface conduction electron-emitting devices 104 were observed, no device was damaged. On the other hand, when the substrate was baked not in an Ar atmosphere but in the air, the element was damaged by burning.

  Next, as in Example 1, the face plate 201 and the rear plate 101 were joined.

  A voltage of 5 KV was applied to the ion pump power source 207 of the image display device created as described above, and the ion pump 209 was driven by a magnetic field of 1400 G or more at the center of the ion pump. Further, an image signal of 16.7 μsec, 60 Hz, and 15 V is supplied from the voltage application device connected to the image display device to the electron-emitting device, and at the same time, a high voltage of 10 KV is applied by the high-voltage application device, so that the surface conduction electron-emitting device 104 is formed. Light was emitted, and the image display device displayed an image.

  For the life evaluation, the image display device was continuously displayed and the time until the luminance was reduced to half was 15000 hours.

  Moreover, the same impact resistance test as Example 1 was done as a reliability test. As a comparative example, an image display device was manufactured under the same conditions as in this example except that the ion pump was joined to the rear plate by a metal seal as shown in FIG. In the comparative example, leak occurred in 5 out of 10 panels, and image display could not be performed. However, in this embodiment, no leak occurred in one panel.

  When the manufacturing yield of the image display device was compared with the comparative example, the overall yield was 30% in the comparative example mainly due to the leakage at the time of attaching the metal seal, but it was 95% in the present embodiment. Moreover, when the thickness of the image display apparatus after container mounting was measured, it was able to be made thin about 100 mm compared with the comparative example. Moreover, when the total weight was measured, it was 500g lighter than the comparative example.

  The image display device created in the present example is enclosed in a glass container in which an ion pump is joined to the rear surface of the rear plate with a frit, has no leakage, and is small, lightweight, highly reliable, and low in cost. is there. Furthermore, since an ion pump can be easily attached, an image display device having a long life can be produced.

<Example 3>
As Example 3, a manufacturing method of an image display device using a field emission type electron-emitting device as an electron source will be described. FIG. 9 shows the structure of the field emission type electron-emitting device 901 used in this example. In the figure, reference numeral 902 denotes a negative electrode, 903 denotes a positive electrode, 905 denotes an electron emitting portion that emits electrons having a sharp tip, and 904 denotes an insulating layer. In such a configuration, when a voltage is applied to the positive electrode 903 and the negative electrode 902 so that the positive electrode 903 has a high potential, an electric field is concentrated on the electron emission portion 905 and electrons are emitted from the electron emission portion 905 by a tunnel effect.

A method for creating the image display apparatus of this embodiment will be described below. The rear plate 101 is the same as that of the first embodiment. First, a field emission type electron-emitting device 901 is formed on the rear plate 101. Using 0.3 μm thick Mo as the negative electrode 902 and the positive electrode 903, the field emission part 905 has a tip angle of 45 degrees, and the electron source corresponding to one pixel has 100 electron emission parts 905 and is insulated. As the layer 904, SiO ₂ having a thickness of 1 μm was used. Mo and SiO ₂ were deposited by a sputtering method, and the processing was performed by a photolithography technique (including processing techniques such as etching and lift-off). Next, in the same manner as in Example 1, the same structure and member upper wiring 102 and lower wiring 103 were formed by the same method. A part of the positive electrode 903 is in electrical contact with the lower wiring 103, and a part of the negative electrode 902 is in electrical contact with the upper wiring 102. Further, the rear plate 101 and the face plate 201 were formed by using the same structure and members in the same manner as in the first embodiment.

  Next, an image display device was produced in exactly the same manner as in Example 1. A voltage of 5 KV was applied to the ion pump power source 207 of the image display device thus created, and the ion pump 209 was driven with a magnetic field of 1400 G or more at the center of the ion pump. Further, an image signal of 16.7 μsec, 60 Hz, and 15 V is supplied from the voltage application device connected to the image display device to the electron-emitting device, and at the same time, a high voltage of 10 KV is applied by the high-voltage application device, so that the surface conduction electron-emitting device 104 is formed. Light was emitted, and the image display device displayed an image.

  For the life evaluation, the image display device was continuously displayed and the time until the luminance was reduced to half was 15000 hours.

  Moreover, the same impact resistance test as Example 1 was done as a reliability test. As a comparative example, an image display device was manufactured under the same conditions as in this example except that the ion pump was joined to the rear plate by a metal seal as shown in FIG. In the comparative example, leak occurred in 5 out of 10 panels, and image display could not be performed. However, in this embodiment, no leak occurred in one panel.

  When the manufacturing yield of the image display device was compared with the comparative example, the overall yield was 30% in the comparative example mainly due to the leakage at the time of attaching the metal seal, but it was 95% in the present embodiment. Moreover, when the thickness of the image display apparatus after container mounting was measured, it was able to be made thin about 100 mm compared with the comparative example. Moreover, when the total weight was measured, it was 500g lighter than the comparative example.

  The image display device created in the present example is enclosed in a glass container in which an ion pump is joined to the rear surface of the rear plate with a frit, has no leakage, and is small, lightweight, highly reliable, and low in cost. is there. Furthermore, since an ion pump can be easily attached, an image display device having a long life can be produced.

  As described above, by using the imaging device manufacturing method of the present invention, the ion pump has a simple structure in which the ion pump is enclosed in a glass container that is light-weighted and leak-free and joined to the rear plate rear surface with a frit. Can be bonded to the image display device, so that a low-cost and highly reliable image display device can be created. In addition, it is possible to easily exhaust the emission gas having a low adsorption ability by the getter film by the ion pump, and it is possible to suppress the deterioration of the electron source due to the emission gas at the time of image display, so that the life of the image display device is greatly extended. It becomes possible. Therefore, by using the image display device manufacturing method according to the present invention, it is possible to create an image display device with a long life, high reliability, and low cost.

It is a figure explaining joining of the ion pump by this invention. It is a structure sectional view of the image display device produced by the present invention. 1 is a schematic configuration diagram of an image display device manufactured according to the present invention. It is a figure explaining a part of electron source. It is a figure for demonstrating a forming process and an activation process. It is a block schematic diagram of a vacuum processing apparatus. It is a figure explaining the baking in a vacuum processing chamber, a getter flash, and a sealing process. It is a figure explaining joining of the ion pump by this invention. 1 is a schematic configuration diagram of a field emission type electron-emitting device to which the present invention is applied. It is the schematic which shows the flat image display apparatus which has the ion pump by a prior art example.

Explanation of symbols

101 rear plate 102 upper wiring 103 lower wiring 104 surface conduction electron-emitting device 105 support frame 106, 117 frit glass 107 opening 108 anode electrode 109 cathode electrode 110 anode connection terminal 111 cathode connection terminal 112 ion pump vessel 113 vacuum exhaust port 114 Vacuum baking furnace 115 Support base 116 Weight 201 Face plate 202, 1001 Phosphor film 203 Metal back film 204 Getter film 205 Indium 206 Spacer 207 Ion pump power supply 208 Magnet 209 Ion pump 401 Interlayer insulating layers 402, 403 Element electrode 404 Electron emission part 405 Conductive thin films 501, 1006 Vacuum container 502 O-ring 503 Substrate stage 504 Electrostatic chuck 505 Turbo molecular pump 506 Power supply 507 Conducton Valve 508 mass flow controllers 509 groove 510 ITO film 601 transfer port 602 load chamber 603 vacuum processing chamber 604 transportation holder 605 gate valve 606 exhaust unit 1
607 Exhaust means 2
701 Support pillar 702 Getter wiring 703 Cover-like jig 704 Getter wiring terminal 705 Getter brush-like contact electrode 706 Upper hot plate 707 Lower hot plate 801 Gas introduction port 901 Field emission type electron-emitting device 902 Negative electrode 903 Positive electrode 904 Insulating layer 905 Electron emission Portion 1002 Sealing material 1003 Internal electrode 1004 Electrode assembly 1005 Container body 1007 Metal seal

Claims (8)

A vacuum container formed by facing the first substrate and the second substrate and sealing the periphery of the first substrate and the second substrate, and an electron source disposed in the vacuum container And a method of manufacturing an image display device including an ion pump,
Prior to the step of sealing the peripheral portions of the first substrate and the second substrate, the method includes a step of bonding an ion pump container to the opening formed in the first substrate or the second substrate. A manufacturing method of an image display device characterized by the above.   2. The image according to claim 1, wherein in the step of joining the ion pump container, the ion pump container is joined to an opening provided in the first substrate or the second substrate without using a flange. Manufacturing method of display device.   3. The method of manufacturing an image display device according to claim 1, wherein the ion pump container is joined using frit glass.   The method for manufacturing an image display device according to claim 1, wherein the step of joining the ion pump container is performed in a reduced pressure or inert gas atmosphere.   The method for manufacturing an image display device according to claim 1, wherein the ion pump container is joined to the first substrate after forming an electron source on the first substrate.   The electron source is a plurality of surface conduction electron-emitting devices formed by forming and activating a conductive thin film formed between a pair of device electrodes. 6. The method of manufacturing an image display device according to claim 5, wherein an ion pump container is joined to the substrate.   The method for manufacturing an image display device according to claim 1, wherein an ion pump container is joined to the second substrate after an image forming member is formed on the second substrate.   8. The method of manufacturing an image display device according to claim 7, wherein the image display member is a fluorescent film and an anode electrode film.

Images