JP2006063025A - New onium salt, resist material and pattern-forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sulfonium salt having excellent thermal stability and storage stability, to provide a high resolution resist material which contains a specific onium salt containing the sulfonium salt as an acid-generating agent and has high sensitivity, high resolution, and small line edge roughness to ArF and F2 excimer laser beams, and to provide a pattern-forming method using the resist material. <P>SOLUTION: This sulfonium salt represented by general formula (1) [R<SP>01</SP>groups are each identically or differently a 1 to 12C straight chain, branched or cyclic alkyl, which may contain a carbonyl group, ether group or ether group, or a 6 to 12C aryl, a 7 to 20C aralkyl or thiophenyl; (p) is 1 or 2]. The resist material containing the acid-generating agent (sulfonium salt) has characteristics such as especially excellent resolution, small dimensional differences between isolated patterns and crowded patterns, small line edge roughness and small pattern formation changes even on light exposure in water (exposure in a state immersed in a liquid), because the solubility of the resist material in water is extremely low. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention includes (1) an onium salt that generates a specific sulfonic acid as an acid generator, and (2) a specific onium salt, and has a wavelength of 200 nm or less, particularly an ArF excimer laser and an F ₂ excimer laser. , An EUV, X-ray, EB resist material, and (3) a pattern forming method using the resist material.

In recent years, with the high integration and high speed of LSIs, miniaturization of pattern rules is demanded, and far ultraviolet lithography and vacuum ultraviolet lithography are promising as next-generation fine processing techniques. Among them, photolithography using ArF excimer laser light as a light source is an indispensable technology for ultra-fine processing of 0.13 μm or less, and photolithography using F ₂ excimer laser light as a light source is realized as a processing technology of 0.1 μm or less. Is anxious.

  In photolithography using ArF excimer laser light as a light source, there is a demand for a resist material with high sensitivity that can exhibit sufficient resolution with a small amount of exposure in order to prevent deterioration of a precise and expensive optical system material. The most common way to realize a highly sensitive resist material is to select a highly transparent material at a wavelength of 193 nm as each composition. For example, for the base resin, polyacrylic acid and its derivatives, norbornene-maleic anhydride alternating polymer, polynorbornene and metathesis ring-opening polymer, etc. have been proposed, and some results have been achieved in terms of increasing the transparency of the resin alone. Have gained. However, with regard to acid generators, increasing transparency reduces acid generation efficiency, resulting in low sensitivity, or lack of thermal stability and storage stability. The current situation is that nothing has been obtained.

  For example, alkylsulfonium salts proposed in JP-A-7-25846 (Patent Document 1), JP-A-7-28237 (Patent Document 2), JP-A-8-27102 (Patent Document 3), etc. However, the acid generation efficiency is insufficient while the transparency is very high, and the thermal stability is also difficult, which is not preferable. Alkylarylsulfonium salts proposed in Japanese Patent Application Laid-Open No. 10-319581 (Patent Document 4) have a good balance between transparency and acid generation efficiency and high sensitivity, but have excellent thermal stability and storage stability. Lack. The arylsulfonium salt that has been effective in photolithography using KrF excimer laser light is excellent in acid generation efficiency, thermal stability, and storage stability, but has extremely low transparency, and the pattern after development has a severely tapered shape. Although there is a measure to reduce the thickness of the resist film in order to compensate for transparency, in this case, the etching resistance of the resist film is lowered, so that it is not suitable as a pattern forming method.

An onium salt widely used as a photoacid generator comprises a neutralized salt of a sulfonium or iodonium cation bonded to an alkyl group or an aryl group and an anion. Cation is decomposed by light irradiation, and the anion releases acid. In the above examples, the structure on the cation side of the onium salt is exemplified, but it is reported that the type of acid generated, that is, the type of anion and the type of acid labile group, are closely related in terms of resolution and pattern shape. ing. For example, in a polyhydroxystyrene and polyhydroxystyrene / (meth) acrylate copolymer-based resist for KrF lithography, many studies have been reported in which the type of acid is changed. For example, US Pat. No. 5,744,537 (Patent Document 5) reports that a good pattern shape can be obtained when an acid generator that generates camphorsulfonic acid is added. Yes. However, ArF and F ₂ polymers having an alicyclic structure have low acid elimination reactivity, and the acid leaving group is the same as that of polyhydroxystyrene and polyhydroxystyrene / (meth) acrylate copolymer. However, sufficient elimination reaction does not proceed with camphorsulfonic acid.

  As the anion side of the onium salt, a fluorinated alkyl sulfonic acid having a high acidity is mainly applied. Examples of the fluorinated alkyl sulfonic acid include trifluoromethane sulfonic acid, nonafluorobutane sulfonic acid, and hexadecafluorooctane sulfonic acid. Also, fluorine-substituted or fluorine-alkyl-substituted aryl sulfonic acids can be mentioned. Specifically, 4-fluorobenzenesulfonic acid, 3-benzenesulfonic acid, 2-benzenesulfonic acid, 2,4-difluorobenzenesulfonic acid, 2,3-difluorobenzenesulfonic acid, 3,4-difluorobenzenesulfonic acid, 2,6-difluorobenzenesulfonic acid, 3,5-difluorobenzenesulfonic acid, 2,3,4-trifluorobenzenesulfonic acid, 3,4,5-trifluorobenzenesulfonic acid, 2,4,6-trifluoro Benzenesulfonic acid, 2,3,4,5,6-pentafluorobenzenesulfonic acid, 4-trifluoromethylbenzenesulfonic acid, 5-trifluoromethylbenzenesulfonic acid, 6-trifluoromethylbenzenesulfonic acid, 4-trimethyl Examples include fluoromethylnaphthyl-2-sulfonic acid.

  Recently, immersion lithography has been adopted. In ArF immersion lithography, pure water is used as an immersion solvent. In immersion lithography, exposure is performed by inserting water between a pre-baked resist film and a projection lens. This is an important technology for extending the life of ArF lithography to the 65 nm node by combining with a projection lens having an NA of 1.0 or more, and development is accelerated. The acid generator that generates nonafluorosulfonic acid mainly used for ArF resist has high solubility in water, and when exposed in water, the acid or acid generator on the resist surface dissolves in water. For this reason, the positive resist has problems such as a T-top shape. Perfluorooctane sulfonic acid (PFOS) has low solubility in water, but has a problem of environmental burden. As novel acid generators, those disclosed in JP-A No. 2002-214774 (Patent Document 6), JP-A No. 2003-140332 (Patent Document 7), and US Patent Application Publication No. 2002/0197558 (Patent Document 8) are disclosed. Acid generators that generate fluoroalkyl ether sulfonic acids have been proposed. Development of a novel acid with low solubility in water is desired.

  Here, Nafion polymer has an excellent characteristic as an electrolyte membrane of a polymer battery, and application to a fuel cell has been attempted. Perfluoroalkyl ether sulfonic acid having an olefin at the terminal is used as a monomer of Nafion polymer.

Japanese Patent Laid-Open No. 7-25846 JP-A-7-28237 JP-A-8-27102 Japanese Patent Laid-Open No. 10-319581 US Pat. No. 5,744,537 JP 2002-214774 A JP 2003-140332 A US Patent Application Publication No. 2002/0197558

The present invention has been made in view of the above circumstances, and by using it as an acid generator, it is highly sensitive to ArF and F ₂ excimer laser light, has high resolution, has low line edge roughness, and has thermal stability and storage. An object of the present invention is to provide a sulfonium salt having excellent stability, a high-resolution resist material containing a specific onium salt containing the sulfonium salt, and a pattern forming method using the resist material.

As a result of intensive studies to achieve the above object, the present inventor has found that an acid generator that generates perfluoroalkyl ether sulfonic acid having an olefin at the terminal, particularly a sulfonium salt represented by the following general formula (1), is an ArF excimer. Because it is highly sensitive to laser light and F ₂ and has low solubility in water, it can be used for ArF immersion exposure and has sufficient thermal stability and storage stability. It has been found that the blended resist material has high resolution, can improve line edge roughness and density dependency, and is extremely effective for precise microfabrication, and has led to the present invention.

（式中、Ｒ⁰¹は同一又は異種の炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基であり、カルボニル基、エステル基又はエーテル基を含んでいてもよく、又は炭素数６〜１２のアリール基、炭素数７〜２０のアラルキル基又はチオフェニル基を表す。ｐは１又は２である。）
請求項２：
ベース樹脂、酸発生剤及び溶剤を含有してなるレジスト材料において、上記酸発生剤が、下記一般式（２）で示されるスルホン酸を発生する酸発生剤を含有することを特徴とするレジスト材料。

（式中、ｎは１〜１０、ｍは１〜６の範囲である。）
請求項３：
上記一般式（２）で示されるスルホン酸を発生する酸発生剤が、下記一般式（３）で示されるオニウム塩であることを特徴とする請求項２記載のレジスト材料。

（式中、Ｒ⁰¹は同一又は異種の炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基であり、カルボニル基、エステル基又はエーテル基を含んでいてもよく、又は炭素数６〜１２のアリール基、炭素数７〜２０のアラルキル基又はチオフェニル基を表す。ｎは１〜１０、ｍは１〜６、Ｍ⁺はヨードニウム又はスルホニウムを表し、ｘは２又は３である。）
請求項４：
ベース樹脂が、ポリアクリル酸及びその誘導体、シクロオレフィン誘導体−無水マレイン酸交互重合体、シクロオレフィン誘導体と無水マレイン酸とポリアクリル酸又はその誘導体との３あるいは４元以上の共重合体、シクロオレフィン誘導体−αトリフルオロメチルアクリル共重合体、ポリノルボルネン、並びにメタセシス開環重合体から選択される１種又は２種以上の高分子重合体であることを特徴とする請求項２又は３記載のレジスト材料。
請求項５：
ベース樹脂が、珪素原子を含有する高分子構造体であることを特徴とする請求項２又は３記載のレジスト材料。
請求項６：
ベース樹脂が、フッ素原子を含有する高分子構造体であることを特徴とする請求項２又は３記載のレジスト材料。
請求項７：
請求項４，５又は６記載のベース樹脂、請求項３記載の一般式（３）で示される酸発生剤及び溶剤を含有し、上記ベース樹脂が現像液に不溶あるいは難溶であって、酸によって現像液に可溶となる化学増幅ポジ型レジスト材料。
請求項８：
更に、塩基性化合物を添加してなることを特徴とする請求項７記載の化学増幅ポジ型レジスト材料。
請求項９：
更に、溶解阻止剤を含有することを特徴とする請求項７又は８記載の化学増幅ポジ型レジスト材料。
請求項１０：
請求項２乃至９のいずれか１項記載のレジスト材料を基板上に塗布する工程と、加熱処理後フォトマスクを介して波長２００ｎｍ以下の高エネルギー線で露光する工程と、必要に応じて加熱処理した後、現像液を用いて現像する工程とを含むことを特徴とするパターン形成方法。
請求項１１：
波長１９３ｎｍのＡｒＦエキシマレーザーを用い、ウエハーと投影レンズの間に水を挿入する液浸リソグラフィー法であることを特徴とする請求項１０記載のパターン形成方法。 That is, the present invention provides the following onium salt, resist material, and pattern forming method.
Claim 1:
A sulfonium salt represented by the following general formula (1):

(In the formula, R ⁰¹ is the same or different linear, branched or cyclic alkyl group having 1 to 12 carbon atoms and may contain a carbonyl group, an ester group or an ether group, or has 6 carbon atoms. Represents an -12 aryl group, an aralkyl group having 7 to 20 carbon atoms, or a thiophenyl group, and p is 1 or 2.)
Claim 2:
A resist material comprising a base resin, an acid generator and a solvent, wherein the acid generator contains an acid generator for generating a sulfonic acid represented by the following general formula (2) .

(In the formula, n is in the range of 1 to 10, and m is in the range of 1 to 6.)
Claim 3:
3. The resist material according to claim 2, wherein the acid generator that generates the sulfonic acid represented by the general formula (2) is an onium salt represented by the following general formula (3).

(In the formula, R ⁰¹ is the same or different linear, branched or cyclic alkyl group having 1 to 12 carbon atoms and may contain a carbonyl group, an ester group or an ether group, or has 6 carbon atoms. Represents an aryl group of -12, an aralkyl group of 7 to 20 carbon atoms, or a thiophenyl group, n represents 1 to 10, m represents 1 to 6, M ⁺ represents iodonium or sulfonium, and x represents 2 or 3.
Claim 4:
Base resin is polyacrylic acid and derivatives thereof, cycloolefin derivative-maleic anhydride alternating polymer, copolymer of cycloolefin derivative, maleic anhydride and polyacrylic acid or derivative thereof, or olefin, cycloolefin 4. The resist according to claim 2, wherein the resist is one or more polymers selected from a derivative-α-trifluoromethylacrylic copolymer, polynorbornene, and a metathesis ring-opening polymer. material.
Claim 5:
4. The resist material according to claim 2, wherein the base resin is a polymer structure containing silicon atoms.
Claim 6:
4. The resist material according to claim 2, wherein the base resin is a polymer structure containing a fluorine atom.
Claim 7:
A base resin according to claim 4, 5 or 6, and an acid generator and a solvent represented by the general formula (3) according to claim 3, wherein the base resin is insoluble or hardly soluble in a developer, A chemically amplified positive resist material that becomes soluble in the developer by the above.
Claim 8:
8. The chemically amplified positive resist composition according to claim 7, further comprising a basic compound.
Claim 9:
The chemical amplification positive resist composition according to claim 7 or 8, further comprising a dissolution inhibitor.
Claim 10:
A step of applying the resist material according to any one of claims 2 to 9 on a substrate, a step of exposing with a high energy ray having a wavelength of 200 nm or less through a photomask after the heat treatment, and a heat treatment if necessary. And a step of developing using a developing solution.
Claim 11:
11. The pattern forming method according to claim 10, which is an immersion lithography method using an ArF excimer laser with a wavelength of 193 nm and inserting water between the wafer and the projection lens.

  The resist material to which the acid generator of the present invention is added is particularly excellent in resolution, has a small dimensional difference between an isolated pattern and a dense pattern, has a small line edge roughness, and has extremely low solubility in water. The pattern shape change is small even by immersion exposure).

The resist material of the present invention contains a base resin, an acid generator, and a solvent. In this case, a double bond is formed at the terminal when irradiated with a high energy ray having a wavelength of 200 nm or less as the acid generator. Those which generate perfluoroalkyl ether sulfonic acids having
As such an acid generator, a sulfonic acid represented by the following general formula (2) is generated, and an onium salt represented by the following general formula (3) is particularly preferably used. In this case, the sulfonium salt represented by the following general formula (1) is a novel substance.

（Ｒ⁰¹は同一又は異種の炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基であり、カルボニル基、エステル基又はエーテル基を含んでいてもよく、又は炭素数６〜１２のアリール基、炭素数７〜２０のアラルキル基又はチオフェニル基を表す。ｎは１〜１０、ｍは１〜６、ｐは１又は２である。また、Ｍ⁺はヨードニウム又はスルホニウムを表し、ｘは２又は３である。）

(R ⁰¹ is the same or different linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, may contain a carbonyl group, an ester group or an ether group, or has 6 to 12 carbon atoms. Represents an aryl group, an aralkyl group having 7 to 20 carbon atoms, or a thiophenyl group, n is 1 to 10, m is 1 to 6, p is 1 or 2. M ⁺ represents iodonium or sulfonium, and x represents 2 or 3.)

R ⁰¹ is the same or different alkyl group having 1 to 12 carbon atoms, particularly 1 to 10 carbon atoms, particularly a linear, branched or cyclic group, and is a carbonyl group (═C═O), ester group (—COO—) or ether. A group (—O—) or the like may be contained. R ⁰¹ is 6-12 carbon atoms such as phenyl group, xylyl group, tolyl group, naphthyl group, especially 7-20 carbon atoms such as 6-10 aryl group, benzyl group, phenylethyl group, phenylpropyl group, In particular, the 7-12 aralkyl group and thiophenyl group are thiophen-2-yl and thiophen-3-yl, and may be a 2-substituted-2-oxoethyl group. M ⁺ represents iodonium or sulfonium, a is 2 when M ⁺ is iodonium, and 3 when M ⁺ is sulfonium.

  Specifically, the following can be specifically exemplified as the sulfonic acid in the general formula (2).

  Therefore, specific examples of the onium salt of the above formula (3) include those represented by the following general formula.

（Ｒ⁰¹、ａは上記の通りである。）

(R ⁰¹ and a are as described above.)

  The onium salt of the present invention limits the structure of the generated acid, that is, the anion side, but the cation side is not particularly limited. In the general formula (3), M is a sulfur atom or an iodine atom, and the general formula (3) can be represented by the following general formulas (4) and (5).

Here, R ⁰³ , R ⁰⁴ and R ⁰⁵ are the same or different linear, branched or cyclic alkyl group, aryl group or aralkyl group having 1 to 20 carbon atoms, and R ⁰³ and R ⁰⁴ , R ⁰⁴ And R ⁰⁵ , R ⁰³ and R ⁰⁵ may combine with each other to form a ring having 3 to 20 carbon atoms, particularly 4 to 14 carbon atoms together with the sulfur atom. R ⁰⁶ and R ⁰⁷ are the same or different aryl groups having 6 to 20 carbon atoms, and R ⁰⁶ and R ⁰⁷ are bonded to each other to form a ring having 6 to 20 carbon atoms, particularly 6 to 14 carbon atoms together with an iodine atom. Also good. Examples of the aryl group include a phenyl group, a xylyl group, a tolyl group, and a naphthyl group. Examples of the aralkyl group include a benzyl group, a phenylethyl group, and a phenylpropyl group.

  Specific examples of the cation side of the compound represented by the general formula (4) or (5) include those having the following structures.

Here, R ^A11 , R ^A12 and R ^A13 are a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, an alkoxy group, an aryl group, or a straight chain having 1 to 20 carbon atoms. An alkyl group or a perfluoroalkyl group containing a chain, branched or cyclic ester group, carbonyl group or lactone ring. R ^A14 , R ^A15 and R ^A16 are linear, branched or cyclic alkyl groups having 1 to 10 carbon atoms and may contain a carbonyl group, an ester group or a lactone ring, and R ^A17 represents a methylene group, R ^A18 is a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, and R ^A17 and R ^A18 are bonded to each other together with the carbon atom to which they are bonded to have 3 to 12 carbon atoms, particularly 4 to 10 carbon atoms. A ring may be formed. a, b, and c are integers of 0-5.

  In order to synthesize the sulfonium salt of the present invention, a method of synthesizing the substituted fluoroalkyl sulfonate anion (1b) of the present invention with a known sulfonium salt halide or anion such as an alkyl sulfonate or an aryl sulfonate is exemplified. .

  In order to synthesize the substituted fluoroalkylsulfonate anion (1b) used as the anion of the sulfonium salt of the present invention, there is a method of hydrolyzing a sulfonyl fluoride represented by the following general formula (1c) in an alkaline aqueous solution. .

（式中、ｐは１又は２を示す。）

(In the formula, p represents 1 or 2.)

  As a general method for hydrolyzing perfluoroalkylsulfonyl fluoride, US Pat. No. 2,732,398 describes a heating method using a 50% aqueous KOH solution. Is also applicable. An aqueous solution of sodium hydroxide, potassium hydroxide or the like can be used as the alkaline aqueous solution, and the concentration is not limited, but 50% is preferably used.

  The synthesis of a sulfonium salt (sulfonium cation) is known and is not particularly limited, but a condensation reaction of sulfoxide and an aromatic compound with diphosphorus pentoxide / methanesulfonic acid, hydrogen fluoride, or sulfuric acid (JP-A-53). No. 44453, JP-A No. 61-212554), a method of reacting diaryl sulfoxide and an aryl Grignard reagent in the presence of a trialkylsilyl halide (Japanese Patent Laid-Open No. 9-323970), excess aryl Grignard reagent A method of reacting with thionyl chloride and then a trialkylsilyl halide in the presence (JP-A-8-311018), a method of reacting phenacyl chloride or chloroacetone with a dialkyl sulfide or a cyclic alkylene sulfide (JP-A 2001-354669). Gazette, JP2003-3214 6 JP), naphthol, hydroxyl group-containing aromatic compounds such as phenol and dialkyl sulfides, a method of reacting a cyclic alkylene sulfides (JP 2002-229192 JP), and the like. Here, as the anion of the sulfonium salt, it is preferable to use an anion having an acid strength of the conjugate acid that is not too high. For example, as anions, there are halide ions such as chloride ion, bromide ion and iodide ion, methanesulfonate, ethanesulfonate, butanesulfonate, alkylsulfonate such as 10-camphorsulfonate, arylsulfonate such as benzenesulfonate and p-toluenesulfonate. It is preferred to use a sulfonium salt. In this case, the anion exchange reaction between a sulfonium salt having a perfluoroalkyl sulfonate such as trifluoromethane sulfonate, nonafluoro-1-butane sulfonate or perfluoro-1-octane sulfonate as an anion and the substituted fluoroalkyl sulfonate anion is quantitative. Often does not go to.

  Anion exchange between the substituted fluoroalkylsulfonic acid anion obtained by hydrolysis of the above sulfonic acid fluoride and the above sulfonium salt can be performed by an existing method.

  Specifically, the sulfonium salt synthesized by the existing method as described above, particularly the sulfonium salt having halide ion, alkyl sulfonate, and aryl sulfonate as anions, and sodium of the substituted fluoroalkyl sulfonate represented by the above general formula (1b) Presence of water and organic solvents that can separate metal ion salts such as ions, potassium ions, calcium ions, or ammonium salts such as ammonium and triethylammonium salts from water such as dichloromethane, chloroform, ethyl acetate, methyl isobutyl ketone, and tetrahydrofuran The anion exchange reaction can be carried out under stirring.

  The compounding amount of the onium salt of the above formula (3) is 0.1 to 15 parts, particularly 0.5 to 8 parts with respect to 100 parts (parts by mass, hereinafter the same) of the base resin described later. If the blending amount is too small, the sensitivity becomes low, and if it is too large, the transparency is lowered and the resolution performance of the resist material may be lowered.

  In the resist material of the present invention, a repeating unit not containing an aromatic substituent is preferably used as the base resin, and polyacrylic acid and its derivatives, cycloolefin derivative-maleic anhydride alternating polymer, cycloolefin derivative and maleic anhydride. One or two selected from a ternary or quaternary copolymer of an acid and polyacrylic acid or a derivative thereof, a cycloolefin derivative-α-trifluoromethylacrylic copolymer, polynorbornene, and a metathesis ring-opening polymer It is a high molecular polymer of a kind or more, particularly a high molecular compound having a repeating unit represented by the following general formula (6) and having a weight average molecular weight of 1,000 to 500,000, preferably 5,000 to 100,000. It is preferable that two or more of the above high-molecular polymers can be blended.

  In this case, in order to prepare a resist material in a chemically amplified positive type, a base resin that is insoluble or hardly soluble in a developer (usually an alkali developer) and becomes soluble in an acid developer is used. Is done. For this reason, those having an acid labile group that can be cleaved by an acid are used.

Here, R ⁰⁰¹ represents a hydrogen atom, a fluorine atom, a methyl group, a trifluoromethyl group, or CH ₂ CO ₂ R ⁰⁰³ . R ⁰⁰² represents a hydrogen atom, a methyl group or CO ₂ R ^003. R ⁰⁰³ represents a linear, branched or cyclic alkyl group having 1 to 15 carbon atoms, specifically, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, tert -Butyl, tert-amyl, n-pentyl, n-hexyl, cyclopentyl, cyclohexyl, ethylcyclopentyl, butylcyclopentyl, ethylcyclohexyl, butylcyclohexyl, adamantyl, ethyladamantyl, butyladamantyl Examples include groups. R ⁰⁰⁴ represents a hydrogen atom, a monovalent hydrocarbon group (preferably a linear, branched or cyclic alkyl group) containing a carboxy group having 1 to 15 carbon atoms or a hydroxyl group, or a hydrophilic adhesive group, Specific examples include groups such as carboxyethyl, carboxybutyl, carboxycyclopentyl, carboxycyclohexyl, carboxynorbornyl, carboxyadamantyl, hydroxyethyl, hydroxybutyl, hydroxycyclopentyl, hydroxycyclohexyl, hydroxynorbornyl, hydroxyadamantyl and the like. At least one of R ^{005 to} R ^{008 is} a C 1-15 carboxy group or a monovalent hydrocarbon group containing a hydroxyl group (preferably a linear, branched or cyclic alkyl group), or fluorine at the β-position. A hydroxy group having an atom or a fluorinated alkyl group, and the rest each independently a hydrogen atom, a fluorine atom, a linear, branched or cyclic alkyl group having 1 to 15 carbon atoms or a fluorinated alkyl Indicates a group. R ^{005 to} R ⁰⁰⁸ may be hydrophilic adhesive groups.

  Specific examples of the monovalent hydrocarbon group containing a carboxy group having 1 to 15 carbon atoms or a hydroxyl group include carboxy, carboxymethyl, carboxyethyl, carboxybutyl, hydroxymethyl, hydroxyethyl, hydroxybutyl, and 2-carboxyethoxy. Carbonyl, 4-carboxybutoxycarbonyl, 2-hydroxyethoxycarbonyl, 4-hydroxybutoxycarbonyl, carboxycyclopentyloxycarbonyl, carboxycyclohexyloxycarbonyl, carboxynorbornyloxycarbonyl, carboxyadamantyloxycarbonyl, hydroxycyclopentyloxycarbonyl, hydroxycyclohexyloxy Carbonyl, hydroxynorbornyloxycarbonyl, hydroxyadamantyloxycarbonyl Group can be exemplified a.

Examples of the straight, the branched or cyclic alkyl group, specifically exemplified the same ones as exemplified for R ^003.

R ^{005 to} R ⁰⁰⁸ may form a ring with each other, in which case at least one of R ^{005 to} R ⁰⁰⁸ is a divalent hydrocarbon group containing a carboxy group having 1 to 15 carbon atoms or a hydroxyl group ( Preferably, it represents a linear or branched alkylene group, and the rest each independently represents a single bond or a linear, branched or cyclic alkylene group having 1 to 15 carbon atoms. Specific examples of the divalent hydrocarbon group containing a carboxy group having 1 to 15 carbon atoms or a hydroxyl group include one hydrogen atom from those exemplified for the monovalent hydrocarbon group containing a carboxy group or a hydroxyl group. Excluded are examples.

Specific examples of the linear, branched or cyclic alkylene group having 1 to 15 carbon atoms include those obtained by removing one hydrogen atom from those exemplified for ^R003 . R ⁰⁰⁹ represents a monovalent hydrocarbon group or a hydrophilic adhesive group containing a —CO ₂ — partial structure having 3 to 15 carbon atoms, specifically 2-oxooxolan-3-yl, 4, 4-dimethyl-2-oxooxolan-3-yl, 4-methyl-2-oxooxan-4-yl, 2-oxo-1,3-dioxolan-4-ylmethyl, 5-methyl-2-oxooxolane- Groups such as 5-yl can be exemplified.

At least one of R ^{010 to} R ⁰¹³ represents a —CO ₂ — partial structure having 2 to 15 carbon atoms or a monovalent hydrocarbon group containing sulfone or sulfonamide, and the rest each independently represents a hydrogen atom or 1 carbon atom. -15 linear, branched or cyclic alkyl groups are shown. R ^{010 to} R ⁰¹³ may be hydrophilic adhesive groups.

Specific examples of the monovalent hydrocarbon group containing a —CO ₂ — partial structure having 2 to 15 carbon atoms include 2-oxooxolan-3-yloxycarbonyl and 4,4-dimethyl-2-oxooxo. Lan-3-yloxycarbonyl, 4-methyl-2-oxooxan-4-yloxycarbonyl, 2-oxo-1,3-dioxolan-4-ylmethyloxycarbonyl, 5-methyl-2-oxooxolane-5 -Groups such as yloxycarbonyl can be exemplified. Examples of the straight, the branched or cyclic alkyl group, specifically exemplified the same ones as exemplified for R ^003.

R ^{010 to} R ⁰¹³ may form a ring with each other, in which case at least one of R ^{010 to} R ⁰¹³ is a divalent hydrocarbon containing a —CO ₂ — partial structure having 1 to 15 carbon atoms. And the rest each independently represents a single bond or a linear, branched or cyclic alkylene group having 1 to 15 carbon atoms.

Specific examples of the divalent hydrocarbon group containing a —CO ₂ — partial structure having 1 to 15 carbon atoms include 1-oxo-2-oxapropane-1,3-diyl and 1,3-dioxo-2. - oxa-1,3-diyl, 1-oxo-2-Okisabutan-1,4-diyl, other like 1,3-dioxo-2-Okisabutan-1,4-diyl, the -CO ₂ - partial structure The thing etc. which remove | excluded one hydrogen atom from what was illustrated with the monovalent | monohydric hydrocarbon group containing this can be illustrated. Specific examples of the linear, branched or cyclic alkylene group having 1 to 15 carbon atoms include those obtained by removing one hydrogen atom from those exemplified for ^R003 .

R ⁰¹⁴ represents a polycyclic hydrocarbon group having 7 to 15 carbon atoms or an alkyl group containing a polycyclic hydrocarbon group, and specifically, norbornyl, bicyclo [3.3.1] nonyl, tricyclo [5. 2.1.0 ^2,6 ] decyl, adamantyl, ethyladamantyl, butyladamantyl, norbornylmethyl, adamantylmethyl and the like. R ⁰¹⁵ represents an acid labile group. R ⁰¹⁶ represents a methylene or oxygen atom. R ⁰¹⁷ does not exist (single bond), or is a linear, branched or cyclic alkylene group having 1 to 10 carbon atoms, and may contain a substituent containing a hetero atom such as a hydroxy group, an alkoxy group or an acetyl group. Good. R ⁰¹⁸ represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.

  k is 0 or 1. a1, a2, a3, b1, b2, b3, c1, c2, c3, d1, d2, d3, e are numbers from 0 to less than 1. In this case, a1 + a2 + a3 + b1 + b2 + b3 + c1 + c2 + c3 + d1 + d2 + d3 + e = 1.

Specific examples of the acid labile group for ^R015 include groups represented by the following general formulas (L1) to (L5), a tertiary alkyl group having 4 to 20 carbon atoms, preferably 4 to 15 carbon atoms, and each alkyl group. Examples thereof include a trialkylsilyl group having 1 to 6 carbon atoms and an oxoalkyl group having 4 to 20 carbon atoms.

In the above formula, R ^L01 and R ^L02 represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms, specifically, methyl group, ethyl group, propyl group. Group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, cyclopentyl group, cyclohexyl group, 2-ethylhexyl group, n-octyl group and the like. R ^L03 represents a monovalent hydrocarbon group which may have a hetero atom such as an oxygen atom having 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms, a linear, branched or cyclic alkyl group, Examples include those in which a part of hydrogen atoms are substituted with a hydroxyl group, an alkoxy group, an oxo group, an amino group, an alkylamino group, and the like, and specific examples include the following substituted alkyl groups.

R ^L01 and R ^L02 , R ^L01 and R ^L03 , R ^L02 and R ^L03 may form a ring, and in the case of forming a ring, R ^L01 , R ^L02 and R ^L03 each have 1 to 18 carbon atoms, Preferably 1-10 linear or branched alkylene groups are shown.

R ^L04 is a tertiary alkyl group having 4 to 20 carbon atoms, preferably 4 to 15 carbon atoms, each alkyl group is a trialkylsilyl group having 1 to 6 carbon atoms, an oxoalkyl group having 4 to 20 carbon atoms, or the above general formula ( And a tertiary alkyl group specifically includes a tert-butyl group, a tert-amyl group, a 1,1-diethylpropyl group, a 1-ethylcyclopentyl group, a 1-butylcyclopentyl group, 1 -Ethylcyclohexyl group, 1-butylcyclohexyl group, 1-ethyl-2-cyclopentenyl group, 1-ethyl-2-cyclohexenyl group, 2-methyl-2-adamantyl group, etc. Specifically, a trimethylsilyl group, a triethylsilyl group, a dimethyl-tert-butylsilyl group, and the like can be given as an oxoalkyl group. Specific examples include a 3-oxocyclohexyl group, a 4-methyl-2-oxooxan-4-yl group, and a 5-methyl-5-oxooxolan-4-yl group. a is an integer of 0-6.

R ^L05 represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms or an optionally substituted aryl group having 6 to 20 carbon atoms, as a linear, branched or cyclic alkyl group. Specifically, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, tert-amyl group, n-pentyl group, n-hexyl group, cyclopentyl group, A cyclohexyl group, a cyclopentylmethyl group, a cyclopentylethyl group, a cyclohexylmethyl group, a cyclohexylethyl group, etc. can be exemplified. Specific examples of the aryl group which may be substituted include a phenyl group, a methylphenyl group, a naphthyl group, an anthryl group, a phenanthryl. Group, pyrenyl group and the like. m is 0 or 1, n is 0, 1, 2, or 3, and 2m + n = 2 or 3.

R ^L06 represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms or an optionally substituted aryl group having 6 to 20 carbon atoms, and specific examples thereof are the same as those of R ^L05. it can. R ^{L07 to} R ^L16 each independently represent a hydrogen atom or a monovalent hydrocarbon group that may contain a hetero atom having 1 to 15 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, sec-butyl group, tert-butyl group, tert-amyl group, n-pentyl group, n-hexyl group, n-octyl group, n-nonyl group, n-decyl group, cyclopentyl group, cyclohexyl group, cyclopentylmethyl group, Linear, branched or cyclic alkyl groups such as cyclopentylethyl group, cyclopentylbutyl group, cyclohexylmethyl group, cyclohexylethyl group, cyclohexylbutyl group, and some of these hydrogen atoms are hydroxyl groups, alkoxy groups, carboxy groups, alkoxy groups Carbonyl group, oxo group, amino group, alkylamino group, cyano group, mercapto group, Kiruchio group, can be exemplified those sulfo group. R ^{L07 to} R ^L16 may form a ring with each other (for example, R ^L07 and R ^L08 , R ^L07 and R ^L09 , R ^L08 and R ^L10 , R ^L09 and R ^L10 , R ^L11 and R ^L12 , R ^L13 And R ^L14 ), in which case a divalent hydrocarbon group which may contain a heteroatom having 1 to 15 carbon atoms is shown, and one hydrogen atom is removed from those exemplified above for the monovalent hydrocarbon group The thing etc. can be illustrated. R ^{L07 to} R ^L16 may be bonded to each other adjacent to each other to form a double bond (for example, R ^L07 and R ^L09 , R ^L09 and R ^L15 , R ^L13 and R ^L15 etc.).

  Among the acid labile groups represented by the above formula (L1), specific examples of the linear or branched groups include the following groups.

  Among the acid labile groups represented by the above formula (L1), specific examples of cyclic groups include tetrahydrofuran-2-yl group, 2-methyltetrahydrofuran-2-yl group, tetrahydropyran-2-yl group, 2 -A methyltetrahydropyran-2-yl group etc. can be illustrated.

  Specific examples of the acid labile group of the above formula (L2) include tert-butoxycarbonyl group, tert-butoxycarbonylmethyl group, tert-amyloxycarbonyl group, tert-amyloxycarbonylmethyl group, 1,1-diethyl. Propyloxycarbonyl group, 1,1-diethylpropyloxycarbonylmethyl group, 1-ethylcyclopentyloxycarbonyl group, 1-ethylcyclopentyloxycarbonylmethyl group, 1-ethyl-2-cyclopentenyloxycarbonyl group, 1-ethyl-2 Examples include -cyclopentenyloxycarbonylmethyl group, 1-ethoxyethoxycarbonylmethyl group, 2-tetrahydropyranyloxycarbonylmethyl group, 2-tetrahydrofuranyloxycarbonylmethyl group and the like.

  Specific examples of the acid labile group of the above formula (L3) include 1-methylcyclopentyl, 1-ethylcyclopentyl, 1-n-propylcyclopentyl, 1-isopropylcyclopentyl, 1-n-butylcyclopentyl, 1-sec- Butylcyclopentyl, 1-methylcyclohexyl, 1-ethylcyclohexyl, 3-methyl-1-cyclopenten-3-yl, 3-ethyl-1-cyclopenten-3-yl, 3-methyl-1-cyclohexen-3-yl, 3 -Ethyl-1-cyclohexen-3-yl and the like can be exemplified.

  Specific examples of the acid labile group of the above formula (L4) include the following groups.

In addition, examples of the tertiary alkyl group, trialkylsilyl group, and oxoalkyl group of the acid labile group represented by ^R015 include those exemplified above.

  Specific examples of the acid labile group of the above formula (L5) include the following groups.

  Further, the following silicon-containing acid labile groups can be used as the acid labile group.

Here, R ¹ and R ² are hydrogen atoms or alkyl groups having 1 to 20 carbon atoms, R ³ , R ⁴ and R ⁵ are the same or different alkyl groups having 1 to 20 carbon atoms, haloalkyl groups, and carbon numbers 6 Or a silicon-containing group in which each alkyl group is bonded to a silicon atom in the formula by a siloxane bond or a silethylene bond. R ¹ and R ² may combine to form a ring having 3 to 10 carbon atoms together with the carbon atom to which they are bonded.

Furthermore, R ³ and R ⁴ , R ³ and R ⁵ , R ⁴ and R ⁵ may be bonded to each other to form a polysiloxane ring having 3 to 10 silicon atoms together with the silicon atom to which they are bonded.

In this case, the silicon-containing group having a siloxane bond or a silalkylene bond with a silicon atom may be represented by the following formula: —W— (SiR ₂ —W) _v —SiR ₃
(W represents O or CH ₂ , R represents an alkyl group or aryl group having 1 to 10 carbon atoms, particularly 1 to 6 carbon atoms, and v represents an integer of 0 to 10, particularly 0 to 6)
The group shown by these is mentioned.

  Furthermore, the following are mentioned as a polysiloxane ring.

（但し、Ｒは上記と同様であり、ｗは２〜１０、特に３〜６の整数である。）

(However, R is the same as the above, and w is an integer of 2 to 10, particularly 3 to 6.)

  Specific examples of the groups represented by the formulas (A-4), (A-5), and (A-6) include those shown below.

  A cyclic silicon-containing acid labile group represented by the general formula (A-7) or (A-8) can also be used.

Here, R ¹ and R ¹³ are linear, branched or cyclic alkyl groups having 1 to 20 carbon atoms, R ² , R ³ , R ⁶ , R ⁷ , R ¹⁰ , R ¹¹ and R ¹² are hydrogen atoms. Or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, R ⁴ , R ⁵ , R ⁸ and R ⁹ are hydrogen atoms, or a linear, branched or cyclic group having 1 to 20 carbon atoms. , A fluorinated alkyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 20 carbon atoms, p, q, r, and s are integers of 0 to 10 and 1 ≦ p + q + s ≦ 20. Specifically, the following can be exemplified.

  Here, the repeating unit represented by a1 and b1 in the formula (6) contains a hydrophilic adhesive group, and is exemplified by the following formulas (6) -1 to (6) -53. Is mentioned.

In the above formula, R ¹⁴ is a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, and R ¹⁵ is a hydrogen atom, a methyl group, a fluorine atom, or a trifluoromethyl group.

  Here, the repeating unit represented by a2 and b2 in the formula (6) contains a hydrophilic adhesive group, and is exemplified by the following formulas (7) -1 to (7) -54. Is mentioned. In the following formulas (7) -1 to (7) -54, n is 0 or 1.

  In the polymer structure used as the base resin in the present invention, a1, a2, a3, a4, b1, b2, b3, b4, c1, c2, c3, c4, d1, d2, d3, d4, e It can also be copolymerized with repeating units other than those mentioned. Examples thereof include fluorinated maleic anhydride, fluorinated maleimide, vinyl ether derivatives, allyl ether derivatives, vinyl acetate, vinyl pyrrolidone, vinyl lactone derivatives and the like listed in the following formulas (8) -1 to (8) -8. .

  Further, the base resin may be a polymer structure containing a silicon atom. In this case, the silicon atom-containing repeating units are those represented by the following formulas (9) -1 to (9) -6. be able to. The weight average molecular weight is preferably in the range of 3,000 to 100,000.

Here, R ²⁰ is a hydrogen atom, a methyl group, a fluorine atom, or a trifluoromethyl group, R ²¹ is a single bond or a divalent hydrocarbon group such as an alkylene group having 1 to 10 carbon atoms, R ²² , R ²³ and R ²⁴ are the same or different hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an aryl group, an alkyl group containing a fluorine atom, or a silicon containing siloxane bond or silalkylene bond with a silicon atom in the formula R ²² and R ²³ , R ²³ and R ²⁴ or R ²² and R ²⁴ may be bonded to form a polysiloxane ring together with the silicon atom to which these are bonded. R ²⁵ is a repeating unit having an acid labile group or an adhesive group.

Examples of the silicon-containing group having a siloxane bond or a silalkylene bond with a silicon atom include the following formula: —W— (SiR ₂ —W) _v —SiR ₃
(W represents O or CH ₂ , R represents an alkyl group or aryl group having 1 to 10 carbon atoms, particularly 1 to 6 carbon atoms, and v represents an integer of 0 to 10, particularly 0 to 6)
The group shown by these is mentioned.

  Furthermore, the following are mentioned as a polysiloxane ring.

（但し、Ｒは上記と同様であり、ｗは２〜１０、特に３〜６の整数である。）

(However, R is the same as the above, and w is an integer of 2 to 10, particularly 3 to 6.)

For example, the above formula (9) -5 is more specifically exemplified by the following formulas (10) -1 to (10) -18, and the above formulas (9) -1 to (9)- -R ²¹ -SiR ²² R ²³ R ²⁴ in 4 the following formulas (10) -1 to (10) can be exemplified by the same as that in -18.

  The repeating unit represented by the above formula (9) -6 is silsesquioxane having a ladder structure, and can be specifically exemplified below.

  The repeating unit of silsesquioxane having an acid-decomposable group can be represented by any of the following general formula (11).

In the above formula, R ⁶³ , R ⁶⁴ and R ⁶⁸ are a linear, branched or cyclic alkylene group having 3 to 20 carbon atoms, or an arylene group having 6 to 20 carbon atoms, a fluorine atom, a trifluoromethyl group May be substituted. R ⁶⁶ and R ⁶⁷ are a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a fluorinated alkyl group, and at least one of R ⁶⁶ and R ⁶⁷ is 1 Contains one or more fluorine atoms. R ⁶⁹ is a fluorine atom or a trifluoromethyl group. A is an acid labile group, and examples thereof include those described above. g, h, i are 1 or 2, and j is an integer of 0-4. The repeating unit a-1 can be exemplified below.

  Next, repeating unit a-2 can be illustrated below.

  Next, repeating unit a-3 can be illustrated below.

  The repeating units a-4 and a-5 can be exemplified as follows.

  The polysilsesquioxane of the formula (9) -6 for polymer blend in the present invention has an adhesive property having a hydrophilic group in addition to the repeating unit whose alkali solubility is improved by the acid represented by the general formula (11). These repeating units can be copolymerized. As the adhesive group, the main component is an oxygen atom such as alcohol group, carboxyl group, ether group, ester group, acetyl group, formyl group, carbonate group, lactone ring, sulfonamide group, cyano group, carboxylic acid anhydride, etc. . Specifically, a repeating unit in which the acid labile group A of the above a-1, a-2, a-3 is a hydrogen atom can be mentioned.

  The repeating unit which has another adhesive group can be illustrated below.

  Furthermore, in order to improve transparency or optimize the molecular weight, it is possible to copolymerize repeating units pendant with alkyl groups or fluorinated alkyls represented by the following (12) -1 to (12) -4.

（式中、Ｒ⁷⁰は同一又は異種の炭素数１〜２０の直鎖状、分岐状もしくは環状の非置換又は置換の炭素数１〜１０のアルキル基であり、フッ素化されたアルキル基であってもよく、Ｒ⁷¹は酸素原子、炭素数１〜１０のアルキレン基、又は炭素数６〜１０のアリーレン基であり、０≦ｊ＜１、０≦ｋ＜１、０≦ｌ＜１、０≦ｍ＜１の範囲である。）

(In the formula, R ⁷⁰ is the same or different linear, branched or cyclic unsubstituted or substituted alkyl group having 1 to 10 carbon atoms, and is a fluorinated alkyl group. R ⁷¹ is an oxygen atom, an alkylene group having 1 to 10 carbon atoms, or an arylene group having 6 to 10 carbon atoms, and 0 ≦ j <1, 0 ≦ k <1, 0 ≦ l <1, 0 ≦ m <1.)

A synthesis example of a silane monomer used for the repeating unit a of the general formula (11) is shown below. Here, a hydrosilylation reaction is performed under a platinum catalyst with norbornene and silane having a carboxylate. R ⁷² may be an acid labile group, a hydrogen atom, or an alkali hydrolyzable group. In the following reaction formula, each X is the same or different halogen atom, hydroxy group, alkoxy group having 1 to 10 carbon atoms, or acyl group having 1 to 10 carbon atoms. The reaction temperature is room temperature, in some cases, heated to a maximum of about 150 ° C., and pressurized to about 10 atmospheres in an autoclave. The catalyst is preferably chloroplatinic acid.

  The silane monomer for obtaining the repeating unit shown by General formula (11) is illustrated below.

Here, R ⁷² may be an acid labile group represented by A, or may be a hydrogen atom or an acyl group having 1 to 6 carbon atoms. In the case of an acyl group, —OR ⁷² is obtained by alkali hydrolysis after polymerization. A hydroxy group may be substituted with an acid labile group.

  Furthermore, the following silane compounds can be co-condensed.

  Furthermore, a silane compound having a tetrafunctional or higher functional condensation group shown below can be copolymerized.

  As a method for synthesizing the polymer compound represented by the general formula (11), co-condensation by hydrolysis is performed using the silane monomer obtained by the hydrosilylation. The amount of water in the hydrolysis reaction is preferably 0.2 to 10 moles per mole of monomer. At this time, a catalyst can also be used. Acetic acid, propionic acid, oleic acid, stearic acid, linoleic acid, salicylic acid, benzoic acid, formic acid, malonic acid, phthalic acid, fumaric acid, citric acid, tartaric acid, hydrochloric acid, sulfuric acid, nitric acid Sulfonic acid, methylsulfonic acid, tosylic acid, trifluoromethanesulfonic acid, ammonia trimethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline hydroxide, 1,8-diazabicyclo [5 4.0] -7-undecene (DBU), 1,5-diazabicyclo [4.3.0] -5-nonenone (DBN), sodium hydroxide, potassium hydroxide, barium hydroxide, calcium hydroxide, etc. Base, tetraalkoxytitanium, trialco Shimono (acetylacetonate) titanium, tetraalkoxy zirconium, may be mentioned trialkoxy mono metal chelate compounds such as (acetylacetonato) zirconium.

  As a reaction operation, a monomer is dissolved in an organic solvent, water is added, and a hydrolysis reaction is started. The catalyst may be added to water or may be added to an organic solvent. The reaction temperature is 0 to 100 ° C, preferably 10 to 80 ° C. A method of heating to 10 to 50 ° C. at the time of dropping the water and then raising the temperature to 40 to 80 ° C. for aging is preferable. As the organic solvent, those hardly soluble or insoluble in water are preferable, tetrahydrofuran, toluene, hexane, ethyl acetate, cyclohexanone, methyl-2-n-amyl ketone, propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether. , Ethylene glycol monoethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, tert-acetate -Butyl, tert-butyl propionate, propylene glycol mono tert Butyl ether acetate, γ- butyrolactone are preferred.

  Thereafter, the catalyst is neutralized, and the organic solvent layer is separated and dehydrated. The remaining water causes the condensation reaction of the remaining silanol to proceed, so dehydration must be sufficiently performed. Preferable examples of the dehydration method include an adsorption method using a salt such as magnesium sulfate and molecular sieve, and an azeotropic dehydration method while removing the solvent.

  Further, the polymer compound is not limited to one type, and two or more types can be added. The performance of the resist material can be adjusted by using a plurality of types of polymer compounds.

  Furthermore, a polymer structure containing a fluorine atom can be used as the base resin. The repeating unit containing a fluorine atom can be represented by the following formulas (13) -1 to (13) -8. The weight average molecular weight is preferably in the range of 3,000 to 100,000.

In the above formula, in general formulas (13) -1 to (13) -8, R ³⁰ , R ³¹ , and R ³² are the same or different hydrogen atoms, fluorine atoms, methyl groups, or trifluoromethyl groups. R ^{30 to} R ³² contain at least one fluorine atom. R ³³ , R ³⁸ , R ⁴² and R ⁴⁴ are the same or different hydrogen atoms, acid labile groups, or adhesive groups. R ³⁴ , R ³⁵ , and R ³⁶ are the same or different hydrogen atom, fluorine atom, methyl group, or trifluoromethyl group, and at least one or more fluorine atoms are included in R ^{30 to} R ³² . R ³⁸ and R ⁴³ are each a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and R ⁴⁰ and R ⁴¹ are a hydrogen atom, a fluorine atom, an alkyl group having 1 to 4 carbon atoms, or fluorinated. It is an alkyl group, and R ⁴⁰ and R ⁴¹ contain at least one fluorine atom. R ⁴⁵ , R ⁴⁶ , R ⁴⁷ , and R ⁴⁸ are a hydrogen atom, a fluorine atom, an alkyl group having 1 to 4 carbon atoms, or a fluorinated alkyl group, and among R ⁴⁵ , R ⁴⁶ , R ⁴⁷ , and R ⁴⁸ Contains at least one fluorine atom. R ⁴⁹ , R ⁵⁰ , R ⁵¹ , and R ⁵² are a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and at least one or more fluorine atoms are included in R ^{49 to} R ⁵² . In the formula, R ⁵³ and R ⁵⁴ are a hydrogen atom or an acid labile group, and 0 <l <1, 0 <m <1, 0 <r <1. The acid labile groups are exemplified above.

  The resist material of the present invention is blended with an acid generator that generates perfluoroalkyl ether sulfonic acid, in particular, a conventionally proposed acid generator different from the sulfonium salt and iodonium salt represented by the general formula (3). Can do.

As a compound blended as an acid generator,
i. An onium salt of the following general formula (P1a-1), (P1a-2) or (P1b),
ii. A diazomethane derivative of the following general formula (P2):
iii. A glyoxime derivative of the following general formula (P3):
iv. A bissulfone derivative of the following general formula (P4):
v. A sulfonic acid ester of an N-hydroxyimide compound of the following general formula (P5),
vi. β-ketosulfonic acid derivatives,
vii. Disulfone derivatives,
viii. Nitrobenzyl sulfonate derivatives,
ix. Examples thereof include sulfonic acid ester derivatives.

（式中、Ｒ^101a、Ｒ^101b、Ｒ^101cはそれぞれ炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基、アルケニル基、オキソアルキル基又はオキソアルケニル基、炭素数６〜２０のアリール基、又は炭素数７〜１２のアラルキル基又はアリールオキソアルキル基を示し、これらの基の水素原子の一部又は全部がアルコキシ基等によって置換されていてもよい。また、Ｒ^101bとＲ^101cとは環を形成してもよく、環を形成する場合には、Ｒ^101b、Ｒ^101cはそれぞれ炭素数１〜６のアルキレン基を示す。Ｋ^-は式（１），（２），（３）以外の非求核性対向イオンを表す。）

Wherein R ^101a , R ^101b and R ^101c are each a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, an alkenyl group, an oxoalkyl group or an oxoalkenyl group, and an aryl having 6 to 20 carbon atoms. Group, an aralkyl group having 7 to 12 carbon atoms or an aryloxoalkyl group, part or all of hydrogen atoms of these groups may be substituted by an alkoxy group, etc. R ^101b and R ^{101c May} form a ring, and in the case of forming a ring, R ^101b and R ^101c each represent an alkylene group having 1 to 6 carbon atoms, and K ⁻ represents a formula (1), (2), (3). Represents a non-nucleophilic counter ion other than

R ^101a , R ^101b and R ^101c may be the same as or different from each other. Specifically, as an alkyl group, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl Group, tert-butyl group, pentyl group, hexyl group, heptyl group, octyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclopropylmethyl group, 4-methylcyclohexyl group, cyclohexylmethyl group, norbornyl group, adamantyl group, etc. Is mentioned. Examples of the alkenyl group include a vinyl group, an allyl group, a propenyl group, a butenyl group, a hexenyl group, and a cyclohexenyl group. Examples of the oxoalkyl group include 2-oxocyclopentyl group, 2-oxocyclohexyl group, and the like. 2-oxopropyl group, 2-cyclopentyl-2-oxoethyl group, 2-cyclohexyl-2-oxoethyl group, 2- (4 -Methylcyclohexyl) -2-oxoethyl group and the like can be mentioned. Examples of the aryl group include a phenyl group, a naphthyl group, a p-methoxyphenyl group, an m-methoxyphenyl group, an o-methoxyphenyl group, an ethoxyphenyl group, a p-tert-butoxyphenyl group, and an m-tert-butoxyphenyl group. Alkylphenyl groups such as alkoxyphenyl groups, 2-methylphenyl groups, 3-methylphenyl groups, 4-methylphenyl groups, ethylphenyl groups, 4-tert-butylphenyl groups, 4-butylphenyl groups, dimethylphenyl groups, etc. Alkyl naphthyl groups such as methyl naphthyl group and ethyl naphthyl group, alkoxy naphthyl groups such as methoxy naphthyl group and ethoxy naphthyl group, dialkyl naphthyl groups such as dimethyl naphthyl group and diethyl naphthyl group, dimethoxy naphthyl group and diethoxy naphthyl group Dialkoxynaphthyl group And the like. Examples of the aralkyl group include a benzyl group, a phenylethyl group, and a phenethyl group. As the aryloxoalkyl group, 2-aryl-2-oxoethyl group such as 2-phenyl-2-oxoethyl group, 2- (1-naphthyl) -2-oxoethyl group, 2- (2-naphthyl) -2-oxoethyl group and the like Groups and the like. Non-nucleophilic counter ions of K ⁻ include halide ions such as chloride ion and bromide ion, fluoroalkyl sulfonates such as triflate, 1,1,1-trifluoroethane sulfonate, and nonafluorobutane sulfonate, tosylate, and benzene sulfonate. And aryl sulfonates such as 4-fluorobenzene sulfonate and 1,2,3,4,5-pentafluorobenzene sulfonate, and alkyl sulfonates such as mesylate and butane sulfonate.

（式中、Ｒ^102a、Ｒ^102bはそれぞれ炭素数１〜８の直鎖状、分岐状又は環状のアルキル基を示す。Ｒ¹⁰³は炭素数１〜１０の直鎖状、分岐状又は環状のアルキレン基を示す。Ｒ^104a、Ｒ^104bはそれぞれ炭素数３〜７の２−オキソアルキル基を示す。Ｋ^-は非求核性対向イオンを表す。）

(In the formula, R ^102a and R ^102b each represent a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms. R ¹⁰³ is a linear, branched or cyclic alkylene having 1 to 10 carbon atoms. R ^104a and R ^104b each represent a 2-oxoalkyl group having 3 to 7 carbon atoms, and K ⁻ represents a non-nucleophilic counter ion.)

Specific examples of R ^102a and R ^102b include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, a pentyl group, a hexyl group, a heptyl group, and an octyl group. , Cyclopentyl group, cyclohexyl group, cyclopropylmethyl group, 4-methylcyclohexyl group, cyclohexylmethyl group and the like. R ¹⁰³ is methylene group, ethylene group, propylene group, butylene group, pentylene group, hexylene group, heptylene group, octylene group, nonylene group, 1,4-cyclohexylene group, 1,2-cyclohexylene. Group, 1,3-cyclopentylene group, 1,4-cyclooctylene group, 1,4-cyclohexanedimethylene group and the like. ^{Examples of} R ^104a and R ^104b include a 2-oxopropyl group, a 2-oxocyclopentyl group, a 2-oxocyclohexyl group, and a 2-oxocycloheptyl group. K ^- is can be exemplified the same ones as described in the formulas (P1a-1) and (P1a-2).

（式中、Ｒ¹⁰⁵、Ｒ¹⁰⁶は炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基又はハロゲン化アルキル基、炭素数６〜２０のアリール基又はハロゲン化アリール基、又は炭素数７〜１２のアラルキル基を示す。）

(In the formula, R ¹⁰⁵ and R ¹⁰⁶ are linear, branched or cyclic alkyl groups or halogenated alkyl groups having 1 to 12 carbon atoms, aryl groups or halogenated aryl groups having 6 to 20 carbon atoms, or carbon atoms. 7 to 12 aralkyl groups are shown.)

^Examples of the alkyl group of R ¹⁰⁵ and R ¹⁰⁶ include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group, octyl group, amyl Group, cyclopentyl group, cyclohexyl group, cycloheptyl group, norbornyl group, adamantyl group and the like. Examples of the halogenated alkyl group include a trifluoromethyl group, a 1,1,1-trifluoroethyl group, a 1,1,1-trichloroethyl group, and a nonafluorobutyl group. As the aryl group, an alkoxyphenyl group such as a phenyl group, p-methoxyphenyl group, m-methoxyphenyl group, o-methoxyphenyl group, ethoxyphenyl group, p-tert-butoxyphenyl group, m-tert-butoxyphenyl group, Examples thereof include alkylphenyl groups such as 2-methylphenyl group, 3-methylphenyl group, 4-methylphenyl group, ethylphenyl group, 4-tert-butylphenyl group, 4-butylphenyl group, and dimethylphenyl group. Examples of the halogenated aryl group include a fluorophenyl group, a chlorophenyl group, and 1,2,3,4,5-pentafluorophenyl group. Examples of the aralkyl group include a benzyl group and a phenethyl group.

（式中、Ｒ¹⁰⁷、Ｒ¹⁰⁸、Ｒ¹⁰⁹は炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基又はハロゲン化アルキル基、炭素数６〜２０のアリール基又はハロゲン化アリール基、又は炭素数７〜１２のアラルキル基を示す。Ｒ¹⁰⁸、Ｒ¹⁰⁹は互いに結合して環状構造を形成してもよく、環状構造を形成する場合、Ｒ¹⁰⁸、Ｒ¹⁰⁹はそれぞれ炭素数１〜６の直鎖状、分岐状のアルキレン基を示す。）

(Wherein R ¹⁰⁷ , R ¹⁰⁸ and R ¹⁰⁹ are each a linear, branched or cyclic alkyl group or halogenated alkyl group having 1 to 12 carbon atoms, an aryl group or halogenated aryl group having 6 to 20 carbon atoms, Or an aralkyl group having 7 to 12 carbon atoms, R ¹⁰⁸ and R ¹⁰⁹ may be bonded to each other to form a cyclic structure, and in the case of forming a cyclic structure, R ¹⁰⁸ and R ¹⁰⁹ each have 1 to 6 carbon atoms. A linear or branched alkylene group.)

Examples of the alkyl group, halogenated alkyl group, aryl group, halogenated aryl group, and aralkyl group of R ¹⁰⁷ , R ¹⁰⁸ , and R ¹⁰⁹ include the same groups as those described for R ¹⁰⁵ and R ¹⁰⁶ . ^Examples of the alkylene group for R ¹⁰⁸ and R ¹⁰⁹ include a methylene group, an ethylene group, a propylene group, a butylene group, and a hexylene group.

（式中、Ｒ^101a、Ｒ^101bは上記と同じである。）

(In the formula, R ^101a and R ^101b are the same as above.)

（式中、Ｒ¹¹⁰は炭素数６〜１０のアリーレン基、炭素数１〜６のアルキレン基又は炭素数２〜６のアルケニレン基を示し、これらの基の水素原子の一部又は全部は更に炭素数１〜４の直鎖状又は分岐状のアルキル基又はアルコキシ基、ニトロ基、アセチル基、又はフェニル基で置換されていてもよい。Ｒ¹¹¹は炭素数１〜８の直鎖状、分岐状又は置換のアルキル基、アルケニル基又はアルコキシアルキル基、フェニル基、又はナフチル基を示し、これらの基の水素原子の一部又は全部は更に炭素数１〜４のアルキル基又はアルコキシ基；炭素数１〜４のアルキル基、アルコキシ基、ニトロ基又はアセチル基で置換されていてもよいフェニル基；炭素数３〜５のヘテロ芳香族基；又は塩素原子、フッ素原子で置換されていてもよい。）

(In the formula, R ¹¹⁰ represents an arylene group having 6 to 10 carbon atoms, an alkylene group having 1 to 6 carbon atoms, or an alkenylene group having 2 to 6 carbon atoms, and some or all of the hydrogen atoms of these groups are further carbon atoms. It may be substituted with a linear or branched alkyl group or alkoxy group having 1 to 4 carbon atoms, a nitro group, an acetyl group, or a phenyl group, and R ¹¹¹ is a linear or branched chain having 1 to 8 carbon atoms. Or a substituted alkyl group, an alkenyl group or an alkoxyalkyl group, a phenyl group, or a naphthyl group, and part or all of the hydrogen atoms of these groups are further an alkyl group or alkoxy group having 1 to 4 carbon atoms; A phenyl group which may be substituted with an alkyl group of 4 to 4, an alkoxy group, a nitro group or an acetyl group; a heteroaromatic group having 3 to 5 carbon atoms; or a phenyl group which may be substituted with a chlorine atom or a fluorine atom.

Here, as the arylene group of R ¹¹⁰ , 1,2-phenylene group, 1,8-naphthylene group and the like are exemplified, and as the alkylene group, methylene group, 1,2-ethylene group, 1,3-propylene group, 1 1,4-butylene group, 1-phenyl-1,2-ethylene group, norbornane-2,3-diyl group, etc., as alkenylene group, 1,2-vinylene group, 1-phenyl-1,2-vinylene group , 5-norbornene-2,3-diyl group and the like. The alkyl group for R ¹¹¹ is the same as R ^{101a to} R ^101c, and the alkenyl group is a vinyl group, 1-propenyl group, allyl group, 1-butenyl group, 3-butenyl group, isoprenyl group, 1- Pentenyl group, 3-pentenyl group, 4-pentenyl group, dimethylallyl group, 1-hexenyl group, 3-hexenyl group, 5-hexenyl group, 1-heptenyl group, 3-heptenyl group, 6-heptenyl group, 7-octenyl Groups such as alkoxyalkyl groups include methoxymethyl, ethoxymethyl, propoxymethyl, butoxymethyl, pentyloxymethyl, hexyloxymethyl, heptyloxymethyl, methoxyethyl, ethoxyethyl, Propoxyethyl, butoxyethyl, pentyloxyethyl, hexyloxyethyl, methoxypro Group, ethoxypropyl group, propoxypropyl group, butoxy propyl group, methoxybutyl group, ethoxybutyl group, propoxybutyl group, a methoxy pentyl group, an ethoxy pentyl group, a methoxy hexyl group, a methoxy heptyl group.

  In addition, examples of the optionally substituted alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a tert-butyl group. As the alkoxy group of ˜4, a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group, a tert-butoxy group and the like are an alkyl group having 1 to 4 carbon atoms, an alkoxy group, and a nitro group. As the phenyl group which may be substituted with an acetyl group, a phenyl group, a tolyl group, a p-tert-butoxyphenyl group, a p-acetylphenyl group, a p-nitrophenyl group, etc. are heterocycles having 3 to 5 carbon atoms. Examples of the aromatic group include a pyridyl group and a furyl group.

  Specifically, for example, trifluoromethanesulfonic acid diphenyliodonium, trifluoromethanesulfonic acid (p-tert-butoxyphenyl) phenyliodonium, p-toluenesulfonic acid diphenyliodonium, p-toluenesulfonic acid (p-tert-butoxyphenyl) phenyl Iodonium, triphenylsulfonium trifluoromethanesulfonate, trifluoromethanesulfonate (p-tert-butoxyphenyl) diphenylsulfonium, bis (p-tert-butoxyphenyl) phenylsulfonium trifluoromethanesulfonate, tris (p-tert) trifluoromethanesulfonate -Butoxyphenyl) sulfonium, p-toluenesulfonic acid triphenylsulfonium, p-toluenesulfonic acid (pt rt-butoxyphenyl) diphenylsulfonium, bis (p-tert-butoxyphenyl) phenylsulfonium p-toluenesulfonate, tris (p-tert-butoxyphenyl) sulfonium p-toluenesulfonate, triphenylsulfonium nonafluorobutanesulfonate, Triphenylsulfonium butanesulfonate, trimethylsulfonium trifluoromethanesulfonate, trimethylsulfonium p-toluenesulfonate, cyclohexylmethyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, cyclohexylmethyl (2-oxocyclohexyl) sulfonium p-toluenesulfonate , Dimethylphenylsulfonium trifluoromethanesulfonate, dimethylphenol p-toluenesulfonate Nylsulfonium, dicyclohexylphenylsulfonium trifluoromethanesulfonate, dicyclohexylphenylsulfonium p-toluenesulfonate, trinaphthylsulfonium trifluoromethanesulfonate, cyclohexylmethyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, trifluoromethanesulfonic acid (2-norbornyl) ) Onium salts such as methyl (2-oxocyclohexyl) sulfonium, ethylenebis [methyl (2-oxocyclopentyl) sulfonium trifluoromethanesulfonate], 1,2'-naphthylcarbonylmethyltetrahydrothiophenium triflate, bis (benzenesulfonyl) ) Diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (xylenesulfur) Phonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (cyclopentylsulfonyl) diazomethane, bis (n-butylsulfonyl) diazomethane, bis (isobutylsulfonyl) diazomethane, bis (sec-butylsulfonyl) diazomethane, bis (n-propylsulfonyl) Diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane, bis (n-amylsulfonyl) diazomethane, bis (isoamylsulfonyl) diazomethane, bis (sec-amylsulfonyl) diazomethane, bis (tert-amylsulfonyl) Diazomethane, 1-cyclohexylsulfonyl-1- (tert-butylsulfonyl) diazomethane, 1-cyclohexylsulfonyl- Diazomethane derivatives such as-(tert-amylsulfonyl) diazomethane, 1-tert-amylsulfonyl-1- (tert-butylsulfonyl) diazomethane, bis-O- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-O -(P-toluenesulfonyl) -α-diphenylglyoxime, bis-O- (p-toluenesulfonyl) -α-dicyclohexylglyoxime, bis-O- (p-toluenesulfonyl) -2,3-pentanedione glyoxime Bis-O- (p-toluenesulfonyl) -2-methyl-3,4-pentanedione glyoxime, bis-O- (n-butanesulfonyl) -α-dimethylglyoxime, bis-O- (n-butane Sulfonyl) -α-diphenylglyoxime, bis-O- (n-butanesulfonyl) -Α-dicyclohexylglyoxime, bis-O- (n-butanesulfonyl) -2,3-pentanedione glyoxime, bis-O- (n-butanesulfonyl) -2-methyl-3,4-pentanedione glyoxime Bis-O- (methanesulfonyl) -α-dimethylglyoxime, bis-O- (trifluoromethanesulfonyl) -α-dimethylglyoxime, bis-O- (1,1,1-trifluoroethanesulfonyl) -α -Dimethylglyoxime, bis-O- (tert-butanesulfonyl) -α-dimethylglyoxime, bis-O- (perfluorooctanesulfonyl) -α-dimethylglyoxime, bis-O- (cyclohexanesulfonyl) -α- Dimethylglyoxime, bis-O- (benzenesulfonyl) -α-dimethylglyoxime, bi -O- (p-fluorobenzenesulfonyl) -α-dimethylglyoxime, bis-O- (p-tert-butylbenzenesulfonyl) -α-dimethylglyoxime, bis-O- (xylenesulfonyl) -α-dimethylglyoxime Glyoxime derivatives such as oxime, bis-O- (camphorsulfonyl) -α-dimethylglyoxime, bisnaphthylsulfonylmethane, bistrifluoromethylsulfonylmethane, bismethylsulfonylmethane, bisethylsulfonylmethane, bispropylsulfonylmethane, bisisopropylsulfonyl Bissulfone derivatives such as methane, bis-p-toluenesulfonylmethane, bisbenzenesulfonylmethane, 2-cyclohexylcarbonyl-2- (p-toluenesulfonyl) propane, 2-isopropylcarbonyl- Β-ketosulfone derivatives such as 2- (p-toluenesulfonyl) propane, disulfone derivatives such as diphenyldisulfone and dicyclohexyldisulfone, 2,6-dinitrobenzyl p-toluenesulfonate, 2,4-dinitrobenzyl p-toluenesulfonate, etc. Nitrobenzyl sulfonate derivatives, 1,2,3-tris (methanesulfonyloxy) benzene, 1,2,3-tris (trifluoromethanesulfonyloxy) benzene, 1,2,3-tris (p-toluenesulfonyloxy) benzene Sulfonic acid ester derivatives such as N-hydroxysuccinimide methanesulfonic acid ester, N-hydroxysuccinimide trifluoromethanesulfonic acid ester, N-hydroxysuccinimide ethanesulfonic acid ester, N-hydroxys Synimide 1-propanesulfonic acid ester, N-hydroxysuccinimide 2-propanesulfonic acid ester, N-hydroxysuccinimide 1-pentanesulfonic acid ester, N-hydroxysuccinimide 1-octanesulfonic acid ester, N-hydroxysuccinimide p-toluenesulfonic acid Ester, N-hydroxysuccinimide p-methoxybenzenesulfonate, N-hydroxysuccinimide 2-chloroethanesulfonate, N-hydroxysuccinimidebenzenesulfonate, N-hydroxysuccinimide-2,4,6-trimethylbenzenesulfonate N-hydroxysuccinimide 1-naphthalenesulfonic acid ester, N-hydroxysuccinimide 2-naphthalenesulfonic acid ester Steal, N-hydroxy-2-phenylsuccinimide methanesulfonate, N-hydroxymaleimide methanesulfonate, N-hydroxymaleimide ethanesulfonate, N-hydroxy-2-phenylmaleimide methanesulfonate, N-hydroxyglutar Imidomethanesulfonic acid ester, N-hydroxyglutarimide benzenesulfonic acid ester, N-hydroxyphthalimide methanesulfonic acid ester, N-hydroxyphthalimide benzenesulfonic acid ester, N-hydroxyphthalimide trifluoromethanesulfonic acid ester, N-hydroxyphthalimide p- Toluenesulfonic acid ester, N-hydroxynaphthalimide methanesulfonic acid ester, N-hydroxynaphthalimide benzene Sulfonic acid ester, N-hydroxy-5-norbornene-2,3-dicarboximide methanesulfonic acid ester, N-hydroxy-5-norbornene-2,3-dicarboximide trifluoromethanesulfonic acid ester, N-hydroxy-5 Examples thereof include sulfonic acid ester derivatives of N-hydroxyimide compounds such as norbornene-2,3-dicarboximide p-toluenesulfonic acid ester, trifluoromethanesulfonic acid triphenylsulfonium, trifluoromethanesulfonic acid (p-tert -Butoxyphenyl) diphenylsulfonium, tris (p-tert-butoxyphenyl) sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate, p-toluenesulfonic acid (p tert-butoxyphenyl) diphenylsulfonium, p-toluenesulfonic acid tris (p-tert-butoxyphenyl) sulfonium, trifluoromethanesulfonic acid trinaphthylsulfonium, trifluoromethanesulfonic acid cyclohexylmethyl (2-oxocyclohexyl) sulfonium, trifluoromethanesulfonic acid Onium salts such as (2-norbornyl) methyl (2-oxocyclohexyl) sulfonium, 1,2'-naphthylcarbonylmethyltetrahydrothiophenium triflate, bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (Cyclohexylsulfonyl) diazomethane, bis (n-butylsulfonyl) diazomethane, bis (isobutylsulfonyl) diazomethane Diazomethane derivatives such as bis (sec-butylsulfonyl) diazomethane, bis (n-propylsulfonyl) diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane, bis-O- (p-toluenesulfonyl)- α-dimethylglyoxime, glyoxime derivatives such as bis-O- (n-butanesulfonyl) -α-dimethylglyoxime, bissulfone derivatives such as bisnaphthylsulfonylmethane, N-hydroxysuccinimide methanesulfonate, N-hydroxysuccinimide trifluor L-methanesulfonic acid ester, N-hydroxysuccinimide 1-propanesulfonic acid ester, N-hydroxysuccinimide 2-propanesulfonic acid ester, N-hydroxysuccin Sulphonic acid ester derivatives of N-hydroxyimide compounds such as imido 1-pentanesulfonic acid ester, N-hydroxysuccinimide p-toluenesulfonic acid ester, N-hydroxynaphthalimide methanesulfonic acid ester, N-hydroxynaphthalimide benzenesulfonic acid ester Is preferably used. In addition, the said acid generator can be used individually by 1 type or in combination of 2 or more types. Since onium salts are excellent in rectangularity improving effect and diazomethane derivatives and glyoxime derivatives are excellent in standing wave reducing effect, it is possible to finely adjust the profile by combining both.

  The amount of the acid generator added is preferably 0.1 to 100 parts of the base resin as a total amount of the acid generator that generates the perfluoroalkyl ether sulfonic acid, particularly the onium salt of the formula (3). 15 parts, more preferably 0.5 to 8 parts. If it is less than 0.1 part, the sensitivity is low, and if it is more than 15 parts, the transparency is lowered and the resolution performance of the resist material may be lowered.

  The organic solvent used in the present invention may be any organic solvent that can dissolve the base resin, acid generator, other additives, and the like. Examples of such an organic solvent include ketones such as cyclohexanone and methyl-2-n-amyl ketone, 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, and 1-ethoxy-2. -Alcohols such as propanol, propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether, and other ethers, propylene glycol monomethyl ether acetate, propylene glycol monoethyl Ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, 3-ethoxy Examples include esters such as ethyl lopionate, tert-butyl acetate, tert-butyl propionate, and propylene glycol mono tert-butyl ether acetate, and these can be used alone or in admixture of two or more. However, it is not limited to these. In the present invention, among these organic solvents, in addition to diethylene glycol dimethyl ether and 1-ethoxy-2-propanol, which have the most excellent solubility of acid generators in resist components, propylene glycol monomethyl ether acetate, which is a safety solvent, and mixtures thereof A solvent is preferably used.

  The amount of the organic solvent used is preferably 200 to 1,000 parts, particularly 400 to 800 parts, based on 100 parts of the base resin.

  A dissolution inhibitor can be further added to the resist material of the present invention. As a dissolution inhibitor, an average molecular weight of 100 to 1,000, preferably 150 to 800, and a compound having two or more phenolic hydroxyl groups in the molecule, all of the hydrogen atoms of the phenolic hydroxyl groups are formed by acid labile groups. As an average, a compound in which the hydrogen atom of the carboxy group of the compound having a carboxy group in the molecule is substituted with an acid labile group as a whole at an average rate of 80 to 100 mol% is blended.

  The substitution rate of the hydrogen atom of the phenolic hydroxyl group or carboxy group by an acid labile group is on average 0 mol% or more, preferably 30 mol% or more of the entire phenolic hydroxyl group or carboxy group, and the upper limit is 100 mol. %, More preferably 80 mol%.

  In this case, as the compound having two or more phenolic hydroxyl groups or the compound having a carboxy group, those represented by the following formulas (D1) to (D14) are preferable.

（但し、式中Ｒ²⁰¹、Ｒ²⁰²はそれぞれ水素原子、又は炭素数１〜８の直鎖状又は分岐状のアルキル基又はアルケニル基を示す。Ｒ²⁰³は水素原子、又は炭素数１〜８の直鎖状又は分岐状のアルキル基又はアルケニル基、あるいは−（Ｒ²⁰⁷）_hＣＯＯＨを示す。Ｒ²⁰⁴は−（ＣＨ₂）_i−（ｉ＝２〜１０）、炭素数６〜１０のアリーレン基、カルボニル基、スルホニル基、酸素原子又は硫黄原子を示す。Ｒ²⁰⁵は炭素数１〜１０のアルキレン基、炭素数６〜１０のアリーレン基、カルボニル基、スルホニル基、酸素原子又は硫黄原子を示す。Ｒ²⁰⁶は水素原子、炭素数１〜８の直鎖状又は分岐状のアルキル基、アルケニル基、又はそれぞれ水酸基で置換されたフェニル基又はナフチル基を示す。Ｒ²⁰⁷は炭素数１〜１０の直鎖状又は分岐状のアルキレン基を示す。Ｒ²⁰⁸は水素原子又は水酸基を示す。ｊは０〜５の整数である。ｕ、ｈは０又は１である。ｓ、ｔ、ｓ’、ｔ’、ｓ’’、ｔ’’はそれぞれｓ＋ｔ＝８、ｓ’＋ｔ’＝５、ｓ’’＋ｔ’’＝４を満足し、かつ各フェニル骨格中に少なくとも１つの水酸基を有するような数である。αは式（Ｄ８）、（Ｄ９）の化合物の分子量を１００〜１，０００とする数である。）

(However, in the formula, each of R ²⁰¹ and R ²⁰² represents a hydrogen atom, or a linear or branched alkyl group or alkenyl group having 1 to 8 carbon atoms. R ²⁰³ represents a hydrogen atom or 1 to 8 carbon atoms. A linear or branched alkyl group or alkenyl group, or — (R ²⁰⁷ ) _h COOH, wherein R ²⁰⁴ is — (CH ₂ ) _i — (i = 2 to 10), an arylene group having 6 to 10 carbon atoms; , A carbonyl group, a sulfonyl group, an oxygen atom or a sulfur atom, R ²⁰⁵ represents an alkylene group having 1 to 10 carbon atoms, an arylene group having 6 to 10 carbon atoms, a carbonyl group, a sulfonyl group, an oxygen atom or a sulfur atom. R ²⁰⁶ represents a hydrogen atom, a linear or branched alkyl group having 1 to 8 carbon atoms, an alkenyl group, or a phenyl group or naphthyl group each substituted with a hydroxyl group, and R ²⁰⁷ is a straight chain having 1 to 10 carbon atoms. Chain or branched alkyle R ²⁰⁸ represents a hydrogen atom or a hydroxyl group, j is an integer of 0 to 5. u and h are 0 or 1. s, t, s ′, t ′, s ″, t ″ Is a number satisfying s + t = 8, s ′ + t ′ = 5, s ″ + t ″ = 4, respectively, and having at least one hydroxyl group in each phenyl skeleton. Α is a formula (D8 ), (D9) is a number that makes the molecular weight of the compound of 100 to 1,000.)

In the above formula, R ²⁰¹ and R ²⁰² are, for example, a hydrogen atom, a methyl group, an ethyl group, a butyl group, a propyl group, an ethynyl group, a cyclohexyl group, and R ²⁰³ is, for example, the same as R ²⁰¹ and R ²⁰² , or As —COOH, —CH ₂ COOH, R ²⁰⁴ , for example, ethylene group, phenylene group, carbonyl group, sulfonyl group, oxygen atom, sulfur atom, etc., as R ²⁰⁵ , for example, methylene group or the same as R ²⁰⁴ , Examples of R ²⁰⁶ include a hydrogen atom, a methyl group, an ethyl group, a butyl group, a propyl group, an ethynyl group, a cyclohexyl group, a phenyl group substituted with a hydroxyl group, and a naphthyl group.

  Here, as the acid labile group of the dissolution inhibitor, the groups represented by the following general formulas (L1) to (L5), the tertiary alkyl group having 4 to 20 carbon atoms, and the carbon number of each alkyl group are each 1 to 1. 6 trialkylsilyl groups, oxoalkyl groups having 4 to 20 carbon atoms, and the like.

（式中、Ｒ^L01〜Ｒ^L16、ａ、ｍ、ｎの定義及び具体例は上記と同様である。）

(In the formula, definitions and specific examples of R ^{L01 to} R ^L16 , a, m, and n are the same as above.)

The amount of the dissolution inhibitor is 0 to 50 parts, preferably 5 to 50 parts, and more preferably 10 to 30 parts, based on 100 parts of the base resin, and can be used alone or in combination of two or more. If the blending amount is less than 5 parts, the resolution may not be improved, and if it exceeds 50 parts, the film thickness of the pattern may be reduced and the resolution may be lowered.
The dissolution inhibitor as described above is synthesized by introducing an acid labile group into a compound having a phenolic hydroxyl group or a carboxy group using an organic chemical formulation.

Furthermore, a basic compound can be mix | blended with the resist material of this invention.
As the basic compound, a compound capable of suppressing the diffusion rate when the acid generated from the acid generator diffuses into the resist film is suitable. By compounding a basic compound, the acid diffusion rate in the resist film is suppressed, resolution is improved, sensitivity change after exposure is suppressed, substrate and environment dependence is reduced, exposure margin, pattern profile, etc. Can be improved.

  Examples of such basic compounds include primary, secondary, and tertiary aliphatic amines, hybrid amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxy group, and sulfonyl groups. A nitrogen-containing compound having a hydroxyl group, a nitrogen-containing compound having a hydroxyl group, a nitrogen-containing compound having a hydroxyphenyl group, an alcoholic nitrogen-containing compound, an amide derivative, an imide derivative, and the like.

  Specifically, primary aliphatic amines include ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert- Amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, etc. are exemplified as secondary aliphatic amines. Dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, disi Lopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N, N-dimethylmethylenediamine, N, N-dimethylethylenediamine, N, N-dimethyltetraethylenepenta Examples of tertiary aliphatic amines include trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, and tripentylamine. , Tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, Examples include cetylamine, N, N, N ′, N′-tetramethylmethylenediamine, N, N, N ′, N′-tetramethylethylenediamine, N, N, N ′, N′-tetramethyltetraethylenepentamine and the like. Is done.

  Examples of hybrid amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, and benzyldimethylamine. Specific examples of aromatic amines and heterocyclic amines include aniline derivatives (eg, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N, N-dimethylaniline, 2-methylaniline, 3- Methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5- Dinitroaniline, N, N-dimethyltoluidine, etc.), diphenyl (p-tolyl) amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (eg pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dim Lupyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, etc.), oxazole derivatives (eg oxazole, isoxazole etc.), thiazole derivatives (eg thiazole, isothiazole etc.), imidazole derivatives (eg imidazole, 4-methylimidazole, 4 -Methyl-2-phenylimidazole, etc.), pyrazole derivatives, furazane derivatives, pyrroline derivatives (eg pyrroline, 2-methyl-1-pyrroline etc.), pyrrolidine derivatives (eg pyrrolidine, N-methylpyrrolidine, pyrrolidinone, N-methylpyrrolidone etc.) ), Imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (eg pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4- (1-butylpentyl) pyridine, dimethyl) Lysine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridone, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2- (1-ethylpropyl) pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine Derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoline derivatives, quinoline derivatives (eg quinoline, 3-quinoline carbo Nitriles), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine Examples include derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives and the like.

  Furthermore, examples of the nitrogen-containing compound having a carboxy group include aminobenzoic acid, indolecarboxylic acid, amino acid derivatives (for example, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine. , Phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine) and the like, and examples of the nitrogen-containing compound having a sulfonyl group include 3-pyridinesulfonic acid, pyridinium p-toluenesulfonate, and the like. Nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, and alcoholic nitrogen-containing compounds include 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, and 3-indolemethanol. Drate, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N, N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol 4-amino-1-butanol, 4- (2-hydroxyethyl) morpholine, 2- (2-hydroxyethyl) pyridine, 1- (2-hydroxyethyl) piperazine, 1- [2- (2-hydroxyethoxy) Ethyl] piperazine, piperidineethanol, 1- (2-hydroxyethyl) pyrrolidine, 1- (2-hydroxyethyl) -2-pyrrolidinone, 3-piperidino-1,2-propanediol, 3-pyrrolidino-1,2-propane Diol, 8-hydroxyuroli , 3-cuincridinol, 3-tropanol, 1-methyl-2-pyrrolidineethanol, 1-aziridineethanol, N- (2-hydroxyethyl) phthalimide, N- (2-hydroxyethyl) isonicotinamide, etc. Illustrated. Examples of amide derivatives include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, propionamide, benzamide and the like. Examples of imide derivatives include phthalimide, succinimide, maleimide and the like.

Furthermore, 1 type, or 2 or more types chosen from the basic compound shown by the following general formula (B) -1 can also be added.
N (X) _n (Y) _3-N (B) -1
In the above formula, n = 1, 2, or 3. The side chains X may be the same or different and can be represented by the following general formulas (X) -1 to (X) -3. The side chain Y represents the same or different hydrogen atom, or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, and may contain an ether group or a hydroxyl group. Xs may be bonded to form a ring.

Here, R ³⁰⁰ , R ³⁰² , and R ³⁰⁵ are linear or branched alkylene groups having 1 to 4 carbon atoms, and R ³⁰¹ and R ³⁰⁴ are hydrogen atoms, or linear and branched groups having 1 to 20 carbon atoms. Or a cyclic alkyl group, which may contain one or a plurality of hydroxy groups, ether groups, ester groups and lactone rings.

R ³⁰³ is a single bond or a linear or branched alkylene group having 1 to 4 carbon atoms, R ³⁰⁶ is a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, and a hydroxy group , Ether, ester group, or lactone ring may be contained.

Specific examples of the compound represented by the general formula (B) -1 are given below.
Tris (2-methoxymethoxyethyl) amine, tris {2- (2-methoxyethoxy) ethyl} amine, tris {2- (2-methoxyethoxymethoxy) ethyl} amine, tris {2- (1-methoxyethoxy) ethyl } Amine, Tris {2- (1-ethoxyethoxy) ethyl} amine, Tris {2- (1-ethoxypropoxy) ethyl} amine, Tris [2- {2- (2-hydroxyethoxy) ethoxy} ethyl] amine, 4,7,13,16,21,24-hexaoxa-1,10-diazabicyclo [8.8.8] hexacosane, 4,7,13,18-tetraoxa-1,10-diazabicyclo [8.5.5] Eicosane, 1,4,10,13-tetraoxa-7,16-diazabicyclooctadecane, 1-aza-12-crown-4 1-aza-15-crown-5, 1-aza-18-crown-6, tris (2-formyloxyethyl) amine, tris (2-formyloxyethyl) amine, tris (2-acetoxyethyl) amine, Tris (2-propionyloxyethyl) amine, tris (2-butyryloxyethyl) amine, tris (2-isobutyryloxyethyl) amine, tris (2-valeryloxyethyl) amine, tris (2-pivalloy) Ruoxyxyethyl) amine, N, N-bis (2-acetoxyethyl) 2- (acetoxyacetoxy) ethylamine, tris (2-methoxycarbonyloxyethyl) amine, tris (2-tert-butoxycarbonyloxyethyl) amine, tris [2- (2-oxopropoxy) ethyl] amine, tris [2- Methoxycarbonylmethyl) oxyethyl] amine, tris [2- (tert-butoxycarbonylmethyloxy) ethyl] amine, tris [2- (cyclohexyloxycarbonylmethyloxy) ethyl] amine, tris (2-methoxycarbonylethyl) amine, tris (2-ethoxycarbonylethyl) amine, N, N-bis (2-hydroxyethyl) 2- (methoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (methoxycarbonyl) ethylamine, N, N -Bis (2-hydroxyethyl) 2- (ethoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (ethoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- (2 -Methoxyethoxycarbonyl) Tylamine, N, N-bis (2-acetoxyethyl) 2- (2-methoxyethoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- (2-hydroxyethoxycarbonyl) ethylamine, N, N- Bis (2-acetoxyethyl) 2- (2-acetoxyethoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2-[(methoxycarbonyl) methoxycarbonyl] ethylamine, N, N-bis (2-acetoxy) Ethyl) 2-[(methoxycarbonyl) methoxycarbonyl] ethylamine, N, N-bis (2-hydroxyethyl) 2- (2-oxopropoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- ( 2-oxopropoxycarbonyl) ethylamine, N, N-bis ( -Hydroxyethyl) 2- (tetrahydrofurfuryloxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (tetrahydrofurfuryloxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- [(2-oxotetrahydrofuran-3-yl) oxycarbonyl] ethylamine, N, N-bis (2-acetoxyethyl) 2-[(2-oxotetrahydrofuran-3-yl) oxycarbonyl] ethylamine, N, N-bis (2-hydroxyethyl) 2- (4-hydroxybutoxycarbonyl) ethylamine, N, N-bis (2-formyloxyethyl) 2- (4-formyloxybutoxycarbonyl) ethylamine, N, N-bis (2-formyl) Oxyethyl) 2- (2-formyloxyate) Sicarbonyl) ethylamine, N, N-bis (2-methoxyethyl) 2- (methoxycarbonyl) ethylamine, N- (2-hydroxyethyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (2-acetoxy) Ethyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (2-hydroxyethyl) bis [2- (ethoxycarbonyl) ethyl] amine, N- (2-acetoxyethyl) bis [2- (ethoxycarbonyl) Ethyl] amine, N- (3-hydroxy-1-propyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (3-acetoxy-1-propyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (2-methoxyethyl) bis [2- (methoxycarbonyl) ethyl] amine, N-butylbis [2 -(Methoxycarbonyl) ethyl] amine, N-butylbis [2- (2-methoxyethoxycarbonyl) ethyl] amine, N-methylbis (2-acetoxyethyl) amine, N-ethylbis (2-acetoxyethyl) amine, N- Methylbis (2-pivaloyloxyxyethyl) amine, N-ethylbis [2- (methoxycarbonyloxy) ethyl] amine, N-ethylbis [2- (tert-butoxycarbonyloxy) ethyl] amine, tris (methoxycarbonylmethyl) Examples include, but are not limited to, amine, tris (ethoxycarbonylmethyl) amine, N-butylbis (methoxycarbonylmethyl) amine, N-hexylbis (methoxycarbonylmethyl) amine, and β- (diethylamino) -δ-valerolactone.

  Furthermore, 1 type, or 2 or more types of the basic compound which has a cyclic structure shown by the following general formula (B) -2 can also be added.

（式中、Ｘは前述の通り、Ｒ³⁰⁷は炭素数２〜２０の直鎖状又は分岐状のアルキレン基であり、カルボニル基、エーテル基、エステル基、スルフィドを１個あるいは複数個含んでいてもよい。）

(In the formula, as described above, R ³⁰⁷ is a linear or branched alkylene group having 2 to 20 carbon atoms and contains one or more carbonyl groups, ether groups, ester groups, and sulfides. May be good.)

  Specific examples of the formula (B) -2 include 1- [2- (methoxymethoxy) ethyl] pyrrolidine, 1- [2- (methoxymethoxy) ethyl] piperidine, 4- [2- (methoxymethoxy) ethyl]. Morpholine, 1- [2-[(2-methoxyethoxy) methoxy] ethyl] pyrrolidine, 1- [2-[(2-methoxyethoxy) methoxy] ethyl] piperidine, 4- [2-[(2-methoxyethoxy) Methoxy] ethyl] morpholine, 2- (1-pyrrolidinyl) ethyl acetate, 2-piperidinoethyl acetate, 2-morpholinoethyl acetate, 2- (1-pyrrolidinyl) ethyl formate, 2-piperidinoethyl propionate, 2-morpholinoethyl acetoxyacetate, 2- (1-pyrrolidinyl) ethyl methoxyacetate, 4- [2- (methoxycarbonyloxy) ethyl] Ruphorin, 1- [2- (t-butoxycarbonyloxy) ethyl] piperidine, 4- [2- (2-methoxyethoxycarbonyloxy) ethyl] morpholine, methyl 3- (1-pyrrolidinyl) propionate, 3-piperidi Methyl nopropionate, methyl 3-morpholinopropionate, methyl 3- (thiomorpholino) propionate, methyl 2-methyl-3- (1-pyrrolidinyl) propionate, ethyl 3-morpholinopropionate, 3-piperidinopropion Methoxycarbonylmethyl acid, 2-hydroxyethyl 3- (1-pyrrolidinyl) propionate, 2-acetoxyethyl 3-morpholinopropionate, 2-oxotetrahydrofuran-3-yl 3- (1-pyrrolidinyl) propionate, 3-morpholino Propionate tetrahydrofurf Glycidyl 3-piperidinopropionate, 2-methoxyethyl 3-morpholinopropionate, 2- (2-methoxyethoxy) ethyl 3- (1-pyrrolidinyl) propionate, butyl 3-morpholinopropionate, 3-pi Cyclohexyl peridinopropionate, α- (1-pyrrolidinyl) methyl-γ-butyrolactone, β-piperidino-γ-butyrolactone, β-morpholino-δ-valerolactone, methyl 1-pyrrolidinyl acetate, methyl piperidinoacetate, methyl morpholinoacetate, Mention may be made of methyl thiomorpholinoacetate, ethyl 1-pyrrolidinyl acetate, 2-methoxyethyl morpholinoacetate.

  Furthermore, a basic compound containing a cyano group represented by general formulas (B) -3 to (B) -6 can be added.

（式中、Ｘ、Ｒ³⁰⁷、ｎは前述の通り、Ｒ³⁰⁸、Ｒ³⁰⁹は同一又は異種の炭素数１〜４の直鎖状もしくは分岐状のアルキレン基である。）

(In the formula, X, R ³⁰⁷ and n are as described above, and R ³⁰⁸ and R ³⁰⁹ are the same or different linear or branched alkylene groups having 1 to 4 carbon atoms.)

  Specific examples of the base containing a cyano group include 3- (diethylamino) propiononitrile, N, N-bis (2-hydroxyethyl) -3-aminopropiononitrile, and N, N-bis (2-acetoxyethyl). -3-aminopropiononitrile, N, N-bis (2-formyloxyethyl) -3-aminopropiononitrile, N, N-bis (2-methoxyethyl) -3-aminopropiononitrile, N, N -Bis [2- (methoxymethoxy) ethyl] -3-aminopropiononitrile, methyl N- (2-cyanoethyl) -N- (2-methoxyethyl) -3-aminopropionate, N- (2-cyanoethyl) -N- (2-hydroxyethyl) -3-aminopropionic acid methyl, N- (2-acetoxyethyl) -N- (2-cyanoethyl) -3-aminopro Methyl onate, N- (2-cyanoethyl) -N-ethyl-3-aminopropiononitrile, N- (2-cyanoethyl) -N- (2-hydroxyethyl) -3-aminopropiononitrile, N- ( 2-acetoxyethyl) -N- (2-cyanoethyl) -3-aminopropiononitrile, N- (2-cyanoethyl) -N- (2-formyloxyethyl) -3-aminopropiononitrile, N- (2 -Cyanoethyl) -N- (2-methoxyethyl) -3-aminopropiononitrile, N- (2-cyanoethyl) -N- [2- (methoxymethoxy) ethyl] -3-aminopropiononitrile, N- ( 2-cyanoethyl) -N- (3-hydroxy-1-propyl) -3-aminopropiononitrile, N- (3-acetoxy-1-propyl) -N- (2 Cyanoethyl) -3-aminopropiononitrile, N- (2-cyanoethyl) -N- (3-formyloxy-1-propyl) -3-aminopropiononitrile, N- (2-cyanoethyl) -N-tetrahydrofur Furyl-3-aminopropiononitrile, N, N-bis (2-cyanoethyl) -3-aminopropiononitrile, diethylaminoacetonitrile, N, N-bis (2-hydroxyethyl) aminoacetonitrile, N, N-bis ( 2-acetoxyethyl) aminoacetonitrile, N, N-bis (2-formyloxyethyl) aminoacetonitrile, N, N-bis (2-methoxyethyl) aminoacetonitrile, N, N-bis [2- (methoxymethoxy) ethyl Aminoacetonitrile, N-cyanomethyl-N- (2-methoxyethyl) ) Methyl 3-aminopropionate, methyl N-cyanomethyl-N- (2-hydroxyethyl) -3-aminopropionate, methyl N- (2-acetoxyethyl) -N-cyanomethyl-3-aminopropionate, N -Cyanomethyl-N- (2-hydroxyethyl) aminoacetonitrile, N- (2-acetoxyethyl) -N- (cyanomethyl) aminoacetonitrile, N-cyanomethyl-N- (2-formyloxyethyl) aminoacetonitrile, N-cyanomethyl -N- (2-methoxyethyl) aminoacetonitrile, N-cyanomethyl-N- [2- (methoxymethoxy) ethyl] aminoacetonitrile, N- (cyanomethyl) -N- (3-hydroxy-1-propyl) aminoacetonitrile, N- (3-acetoxy-1-propyl) -N (Cyanomethyl) aminoacetonitrile, N-cyanomethyl-N- (3-formyloxy-1-propyl) aminoacetonitrile, N, N-bis (cyanomethyl) aminoacetonitrile, 1-pyrrolidinepropiononitrile, 1-piperidinepropiononitrile, 4-morpholinepropiononitrile, 1-pyrrolidineacetonitrile, 1-piperidineacetonitrile, 4-morpholineacetonitrile, cyanomethyl 3-diethylaminopropionate, cyanomethyl N, N-bis (2-hydroxyethyl) -3-aminopropionate, N, Cyanomethyl N-bis (2-acetoxyethyl) -3-aminopropionate, cyanomethyl N, N-bis (2-formyloxyethyl) -3-aminopropionate, N, N-bis (2-methoxyethyl) Cyanomethyl 3-aminopropionate, N, N-bis [2- (methoxymethoxy) ethyl] -3-aminopropionate cyanomethyl, 3-diethylaminopropionic acid (2-cyanoethyl), N, N-bis (2-hydroxyethyl) ) -3-Aminopropionic acid (2-cyanoethyl), N, N-bis (2-acetoxyethyl) -3-aminopropionic acid (2-cyanoethyl), N, N-bis (2-formyloxyethyl) -3 Aminopropionic acid (2-cyanoethyl), N, N-bis (2-methoxyethyl) -3-aminopropionic acid (2-cyanoethyl), N, N-bis [2- (methoxymethoxy) ethyl] -3- Aminopropionic acid (2-cyanoethyl), 1-pyrrolidinepropionate cyanomethyl, 1-piperidinepropionate cyano Examples include methyl, cyanomethyl 4-morpholine propionate, 1-pyrrolidinepropionic acid (2-cyanoethyl), 1-piperidinepropionic acid (2-cyanoethyl), 4-morpholine propionic acid (2-cyanoethyl).

The compounding quantity of the said basic compound is 0.001-10 parts with respect to 1 part of acid generators, Preferably it is 0.01-1 part. If the blending amount is less than 0.001 part, the effect as an additive may not be sufficiently obtained, and if it exceeds 10 parts, resolution and sensitivity may be lowered.
is there.

  A dissolution accelerator can be added to the resist material of the present invention. As the dissolution accelerator, a compound having a fluoroalcohol group such as hexafluoroalcohol is preferably used.

  In this case, the dissolution promoter can be exemplified as follows.

  Furthermore, the resist material of the present invention can be blended with an acetylene alcohol derivative as an additive, thereby improving storage stability.

  As the acetylene alcohol derivative, those represented by the following general formulas (S1) and (S2) can be preferably used.

（式中、Ｒ⁵⁰¹、Ｒ⁵⁰²、Ｒ⁵⁰³、Ｒ⁵⁰⁴、Ｒ⁵⁰⁵はそれぞれ水素原子、又は炭素数１〜８の直鎖状、分岐状又は環状のアルキル基であり、Ｘ、Ｙは０又は正数を示し、下記値を満足する。０≦Ｘ≦３０、０≦Ｙ≦３０、０≦Ｘ＋Ｙ≦４０である。）

Wherein R ⁵⁰¹ , R ⁵⁰² , R ⁵⁰³ , R ⁵⁰⁴ and R ⁵⁰⁵ are each a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, and X and Y are 0 or Indicates a positive number and satisfies the following values: 0 ≦ X ≦ 30, 0 ≦ Y ≦ 30, 0 ≦ X + Y ≦ 40.)

  The acetylene alcohol derivative is preferably Surfinol 61, Surfinol 82, Surfinol 104, Surfinol 104E, Surfinol 104H, Surfinol 104A, Surfinol TG, Surfinol PC, Surfinol 440, Surfinol 465, Surfinol 485 (Air Products and Chemicals Inc.), Surfynol E1004 (manufactured by Nissin Chemical Industry Co., Ltd.) and the like.

  The addition amount of the acetylene alcohol derivative is 0.01 to 2% by mass, more preferably 0.02 to 1% by mass in 100% by mass of the resist material. If the amount is less than 0.01% by mass, the effect of improving coating properties and storage stability may not be sufficiently obtained. If the amount is more than 2% by mass, the resolution of the resist material may be lowered.

  In addition to the above components, a surfactant conventionally used for improving the coating property can be added to the resist material of the present invention. In addition, the addition amount of an arbitrary component can be made into a normal amount in the range which does not inhibit the effect of this invention.

  Here, the surfactant is preferably nonionic, such as perfluoroalkyl polyoxyethylene ethanol, fluorinated alkyl ester, perfluoroalkylamine oxide, perfluoroalkyl EO adduct, fluorine-containing organosiloxane compound, and the like. Can be mentioned. For example, Florard “FC-430”, “FC-431” (both manufactured by Sumitomo 3M), Surflon “S-141”, “S-145” (both manufactured by Asahi Glass Co., Ltd.), Unidyne “DS-” 401 "," DS-403 "," DS-451 "(manufactured by Daikin Industries, Ltd.), MegaFuck" F-8151 "(manufactured by Dainippon Ink Industries, Ltd.)," X-70-092 " , “X-70-093” (all manufactured by Shin-Etsu Chemical Co., Ltd.) and the like. Preferably, Florard “FC-430” (manufactured by Sumitomo 3M Co., Ltd.), “X-70-093” (manufactured by Shin-Etsu Chemical Co., Ltd.) can be used.

A pattern can be formed using the resist material of the present invention by employing a known lithography technique. For example, the film thickness is 0.3 to 0.3 on a substrate such as a silicon wafer by a method such as spin coating. It apply | coats so that it may become 2.0 micrometers, and this is prebaked on a hotplate at 60-150 degreeC for 1-10 minutes, Preferably it is 80-130 degreeC for 1-5 minutes. Next, a mask for forming a target pattern is placed over the resist film, and an ArF excimer laser is irradiated at an exposure amount of about 1 to 100 mJ / cm ² , preferably about 5 to 50 mJ / cm ² , Post exposure baking (PEB) is performed on a hot plate at 60 to 150 ° C. for 1 to 5 minutes, preferably 80 to 130 ° C. for 1 to 3 minutes. Furthermore, 0.1-5%, preferably 2-3% tetramethylammonium hydroxide (TMAH) or other alkaline aqueous developer is used for 0.1-3 minutes, preferably 0.5-2 minutes. A target pattern is formed on the substrate by developing by a conventional method such as a (dip) method, a paddle method, or a spray method. In addition, when the said range deviates from an upper limit and a minimum, the target pattern may not be obtained.

  In this case, the resist material of the present invention can be applied to immersion photolithography in which an ArF excimer laser having a wavelength of 180 to 250 nm, particularly 193 nm, is used as a light source and water is inserted between the projection lens and the wafer. That is, exposure is performed in water by the above-mentioned wavelength, particularly ArF immersion lithography. After exposure, a method of spin drying water, performing post-exposure baking (PEB), and then developing can be employed.

  EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example.

[Synthesis Example 1] Synthesis of potassium perfluoro (4-methyl-3,6-dioxa-7-octene) sulfonate 25 g of 50 wt% aqueous potassium hydroxide solution and perfluoro (4-methyl-3,6) manufactured by SynQuest -Dioxa-7-octene) sulfonyl fluoride 25g was heated and stirred in an oil bath at 110 ° C.
After heating for 3 hours, the mixture was cooled in an ice bath, and the precipitated crystals were filtered under reduced pressure. The crystals were washed with a small amount of cold water and then dried under reduced pressure to obtain 21 g of white crystals.

[Synthesis Example 2] Synthesis of triphenylsulfonium chloride 40 g (0.2 mol) of diphenylsulfoxide was dissolved in 400 g of dichloromethane and stirred under ice cooling. Trimethylsilyl chloride (65 g, 0.6 mol) was added dropwise at a temperature not exceeding 20 ° C., and aging was further performed at this temperature for 30 minutes. Subsequently, a Grignard reagent separately prepared from 14.6 g (0.6 mol) of metal magnesium, 67.5 g (0.6 mol) of chlorobenzene, and 168 g of THF (tetrahydrofuran) was added dropwise at a temperature not exceeding 20 ° C. After aging the reaction for 1 hour, 50 g of water was added at a temperature not exceeding 20 ° C. to stop the reaction, and 150 g of water, 10 g of 12 N hydrochloric acid and 200 g of diethyl ether were further added.
The aqueous layer was separated and washed with 100 g of diethyl ether to obtain an aqueous triphenylsulfonium chloride solution. This was used for the next reaction as an aqueous solution without further isolation.

[Synthesis Example 3] Synthesis of 4-tert-butylphenyldiphenylsulfonium chloride As in Synthesis Example 2, except that 4-tert-butylchlorobenzene was used instead of chlorobenzene of Synthesis Example 2 and the amount of water during extraction was increased. The target was obtained.

[Synthesis Example 4] Synthesis of 4-tert-butoxyphenyldiphenylsulfonium chloride Using 4-tert-butoxychlorobenzene instead of chlorobenzene of Synthesis Example 2 and a dichloromethane solvent containing 5% by mass of triethylamine as a solvent, water at the time of extraction The target product was obtained in the same manner as in Synthesis Example 2 except that the amount of was increased.

[Synthesis Example 5] Synthesis of tris (4-methylphenyl) sulfonium chloride Using bis (4-methylphenyl) sulfoxide instead of phenyl sulfoxide in Synthesis Example 2 and using 4-chlorotoluene instead of chlorobenzene, during extraction The target product was obtained in the same manner as in Synthesis Example 2 except that the amount of water was increased.

[Synthesis Example 6] Synthesis of tris (4-tert-butylphenyl) sulfonium chloride Bis (4-tert-butylphenyl) sulfoxide was used instead of phenylsulfoxide of Synthesis Example 2 and 4-tert-butylchlorobenzene was used instead of chlorobenzene. Was used in the same manner as in Synthesis Example 2 except that the amount of water during extraction was increased.

[Synthesis Example 7] Synthesis of bis (4-tert-butylphenyl) iodonium hydrogen sulfate A mixture of 84 g (0.5 mol) of tert-butylbenzene, 53 g (0.25 mol) of potassium iodate, and 50 g of acetic anhydride was prepared. The mixture was stirred under ice cooling, and a mixture of 35 g of acetic anhydride and 95 g of concentrated sulfuric acid was added dropwise at a temperature not exceeding 30 ° C. Next, aging was carried out at room temperature for 3 hours, ice-cooled again, and 250 g of water was added dropwise to stop the reaction. This reaction solution was extracted with 400 g of dichloromethane, and 6 g of sodium bisulfite was added to the organic layer for decolorization. Further, washing this organic layer with 250 g of water was repeated three times. The washed organic layer was concentrated under reduced pressure to obtain the target crude product. It was used in the next reaction without further purification.

[Synthesis Example 8] Synthesis of phenacyltetrahydrothiophenium bromide 88.2 g (0.44 mol) of phenacyl bromide and 39.1 g (0.44 mol) of tetrahydrothiophene were dissolved in 220 g of nitromethane and stirred at room temperature for 4 hours. Went. 800 g of water and 400 g of diethyl ether were added to the reaction solution, and the separated aqueous layer was separated to obtain the desired aqueous phenacyltetrahydrothiophenium bromide solution.

Synthesis Example 9 Synthesis of dimethylphenylsulfonium sulfate 6.2 g (0.05 mol) of thioanisole and 6.9 g (0.055 mol) of dimethylsulfuric acid were stirred at room temperature for 12 hours. 100 g of water and 50 ml of diethyl ether were added to the reaction solution, and the aqueous layer was separated to obtain the desired aqueous dimethylphenylsulfonium sulfate solution.

[Synthesis Example 10] Synthesis of triphenylsulfonium perfluoro (4-methyl-3,6-dioxa-7-octene) sulfonate equivalent to 0.014 mol of triphenylsulfonium chloride aqueous solution described in Synthesis Example 2 and sulfone described in Synthesis Example 1 6.5 g (0.014 mol) of potassium acid was dissolved in 100 g of dichloromethane and 50 g of water and stirred. After stirring for 10 minutes, the organic layer was separated, and the organic layer was further washed with 100 g of water three times. The organic solvent was concentrated under reduced pressure, and the residue was purified by silica gel column chromatography to obtain 4 g of the desired compound (oil, yield 40%).
The results of time-of-flight mass spectrometry (TOF-MS) of the obtained object are described below.
(MALDI-TOFMS)
(+) 263 (equivalent to C ₁₈ H ₁₅ S)
(−) 443 (equivalent to C ₇ F ₁₃ O ₅ S)
The results of ¹ H-NMR, ¹³ C-NMR, and ¹⁹ F-NMR are shown in FIGS.

[Synthesis Example 11] Synthesis of 4-tert-butylphenyldiphenylsulfonium perfluoro (4-methyl-3,6-dioxa-7-octene) sulfonate Compound of Synthesis Example 3 instead of triphenylsulfonium chloride aqueous solution of Synthesis Example 10 The target product was synthesized in the same manner as in Synthesis Example 10 except that was used.

[Synthesis Example 12] Synthesis of 4-tert-butoxyphenyldiphenylsulfonium perfluoro (4-methyl-3,6-dioxa-7-octene) sulfonate Compound of Synthesis Example 4 instead of the aqueous triphenylsulfonium chloride solution of Synthesis Example 10 The target product was synthesized in the same manner as in Synthesis Example 10 except that was used.

Synthesis Example 13 Synthesis of Tris (4-methylphenyl) sulfonium perfluoro (4-methyl-3,6-dioxa-7-octene) sulfonate Compound of Synthesis Example 5 instead of the aqueous triphenylsulfonium chloride solution of Synthesis Example 10 The target product was synthesized in the same manner as in Synthesis Example 10 except that was used.

[Synthesis Example 14] Synthesis of tris (4-tert-butylphenyl) sulfonium perfluoro (4-methyl-3,6-dioxa-7-octene) sulfonate Synthesis Example 6 instead of the aqueous triphenylsulfonium chloride solution of Synthesis Example 10 The target product was synthesized in the same manner as in Synthesis Example 10 except that the above compound was used.

Synthesis Example 15 Synthesis of bis (4-tert-butylphenyl) iodonium perfluoro (4-methyl-3,6-dioxa-7-octene) sulfonate Synthesis Example 7 instead of the aqueous triphenylsulfonium chloride solution of Synthesis Example 10 The target product was synthesized in the same manner as in Synthesis Example 10 except that the above compound was used.

[Synthesis Example 16] Synthesis of phenacyltetrahydrothiophenium perfluoro (4-methyl-3,6-dioxa-7-octene) sulfonate The compound of Synthesis Example 8 was used instead of the aqueous triphenylsulfonium chloride solution of Synthesis Example 10. The target product was synthesized in the same manner as in Synthesis Example 10 except for the above.

Synthesis Example 17 Synthesis of dimethylphenylsulfonium perfluoro (4-methyl-3,6-dioxa-7-octene) sulfonate Synthesis was performed except that the compound of Synthesis Example 9 was used instead of the aqueous triphenylsulfonium chloride solution of Synthesis Example 10. The target product was synthesized in the same manner as in Example 10.

[Example]
About the sulfonium salt and iodonium salt (PAG1-8) shown by a following formula, the sensitivity and resolution at the time of making it into a resist were evaluated.

[Examples 1 to 25] Evaluation of resist resolution The sulfonium salt (PAG1 to 8) represented by the above formula was used as an acid generator, and the polymer (Polymer 1 to 8) represented by the following formula was used as a base resin. The resist is dissolved in a solvent containing 0.01% by mass of FC-430 (manufactured by Sumitomo 3M Co., Ltd.) with a composition shown in the table of a dissolution accelerator DRR1, a dissolution inhibitor DRI1, and a basic compound represented by the following formula: The resist solutions were prepared by preparing the materials and further filtering each composition with a 0.2 μm Teflon (registered trademark) filter.

An antireflection film solution (ARC-29A manufactured by Nissan Chemical Industries, Ltd.) is applied on a silicon substrate and baked at 200 ° C. for 60 seconds, and a resist solution is spin-coated on the antireflection film (78 nm film thickness) substrate. Then, it was baked at 120 ° C. for 60 seconds using a hot plate to form a resist film having a thickness of 200 nm. This was exposed using an ArF excimer laser microstepper (Nikon Corporation S305B, NA = 0.68, σ0.85, 2/3 annular illumination, Cr mask), and baked at 110 ° C. for 90 seconds (PEB) And developed with an aqueous solution of 2.38% tetramethylammonium hydroxide for 60 seconds.
The evaluation of the resist is performed by setting the exposure amount for resolving the 0.12 μm group line and space at 1: 1 as the optimum exposure amount (Eop, mJ / cm ² ), and separating the line and space at this exposure amount. The minimum line width (μm) was taken as the resolution of the evaluation resist.

The compositions and evaluation results of each resist are shown in Tables 1 and 2. In Tables 1 and 2, the solvents and basic compounds are as follows.
PGMEA: Propylene glycol methyl ether acetate CyHO: Cyclohexanone TOA: Tri-n-octylamine TEA: Triethanolamine TMMEA: Trismethoxymethoxyethylamine TMMEMA: Trismethoxyethoxymethoxyethylamine AAA: Tris (2-acetoxyethyl) amine

[Comparative example]
For comparison, the sulfonium salt (PAG9) represented by the following formula was evaluated for sensitivity and resolution when used as a resist.

[Comparative Example 1]
Using the sulfonium salt (PAG9) represented by the above formula, a resist was prepared with the composition shown in Table 3 in the same manner as described above, and the sensitivity and resolution were evaluated in the same manner as described above.
Table 3 shows the composition and evaluation results of each resist.

  Next, using the resists of Example 1 and Comparative Example 1, a 300-second pure water rinse is performed between pre-baking and exposure, or between exposure and PEB, and pseudo immersion exposure is performed. The shape of the 110 nm line and space pattern was observed. The results are summarized in Table 4.

  From the results shown in Tables 1 to 4, the resist material of the present invention has high sensitivity and high resolution, and has no shape change even when rinsing with water for a long time as compared with conventional products, and can sufficiently cope with immersion exposure. Was confirmed.

Is a diagram showing the ¹ H-NMR / CDCl _3. ¹³ is a diagram showing a C-NMR / CDCl _3. Is a diagram showing the ¹⁹ F-NMR / CDCl _3.

Claims (11)

A sulfonium salt represented by the following general formula (1):

(In the formula, R ⁰¹ is the same or different linear, branched or cyclic alkyl group having 1 to 12 carbon atoms and may contain a carbonyl group, an ester group or an ether group, or has 6 carbon atoms. Represents an -12 aryl group, an aralkyl group having 7 to 20 carbon atoms, or a thiophenyl group, and p is 1 or 2.) A resist material comprising a base resin, an acid generator and a solvent, wherein the acid generator contains an acid generator for generating a sulfonic acid represented by the following general formula (2) .

(In the formula, n is in the range of 1 to 10, and m is in the range of 1 to 6.) 3. The resist material according to claim 2, wherein the acid generator that generates the sulfonic acid represented by the general formula (2) is an onium salt represented by the following general formula (3).

(In the formula, R ⁰¹ is the same or different linear, branched or cyclic alkyl group having 1 to 12 carbon atoms and may contain a carbonyl group, an ester group or an ether group, or has 6 carbon atoms. Represents an aryl group of -12, an aralkyl group of 7 to 20 carbon atoms, or a thiophenyl group, n represents 1 to 10, m represents 1 to 6, M ⁺ represents iodonium or sulfonium, and x represents 2 or 3.   Base resin is polyacrylic acid and derivatives thereof, cycloolefin derivative-maleic anhydride alternating polymer, copolymer of cycloolefin derivative, maleic anhydride and polyacrylic acid or derivative thereof, or olefin, cycloolefin 4. The resist according to claim 2, wherein the resist is one or more polymer polymers selected from a derivative-α-trifluoromethylacrylic copolymer, polynorbornene, and a metathesis ring-opening polymer. material.   4. The resist material according to claim 2, wherein the base resin is a polymer structure containing silicon atoms.   4. The resist material according to claim 2, wherein the base resin is a polymer structure containing a fluorine atom.   A base resin according to claim 4, 5 or 6, and an acid generator and a solvent represented by the general formula (3) according to claim 3, wherein the base resin is insoluble or hardly soluble in a developer, A chemically amplified positive resist material that is soluble in the developer by the above.   8. The chemically amplified positive resist composition according to claim 7, further comprising a basic compound.   9. The chemically amplified positive resist material according to claim 7, further comprising a dissolution inhibitor.   A step of applying the resist material according to any one of claims 2 to 9 on a substrate, a step of exposing with a high energy ray having a wavelength of 200 nm or less through a photomask after the heat treatment, and a heat treatment if necessary. And a step of developing using a developing solution. 11. The pattern forming method according to claim 10, which is an immersion lithography method using an ArF excimer laser with a wavelength of 193 nm and inserting water between the wafer and the projection lens.

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