JP2006054286A - Vacuum chuck jig, vacuum chuck method, and manufacturing method of liquid-droplet discharging head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum chuck jig, a vacuum chuck method using this vacuum chuck jig, and a manufacturing method of a liquid-droplet discharging head that uses this vacuum chuck jig and having a high etching accuracy, wherein flaws and defects are hardly generated by this vacuum chuck jig in the processed portion of a sucked substrate made of silicon, etc. <P>SOLUTION: First suction holes 3 for sucking a sucked substrate are provided in the outer peripheral portion than the central portion occupying a certain range, separated from the center of a surface of the vacuum chucking jig which is present on the side of sucking the sucked substrate. Also, in addition to the first suction holes 3 provided in the outer peripheral portion, a second suction hole 3 for sucking the sucked substrate is provided to the center of the surface, which is installed on the side of sucking the sucked substrate. Further, suction portions 2, having the formed first suction hole 3 or holes 3, are so provided protrusively from the surface as to be able to hold the sucked substrate by only the suction portions 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a vacuum chuck jig, a vacuum chuck method, and a manufacturing method of a droplet discharge head, and in particular, a vacuum chuck jig that hardly causes scratches or defects in a processing portion of a substrate to be attracted and the vacuum chuck jig are used. The present invention relates to a vacuum chuck method and a manufacturing method of a droplet discharge head using the vacuum chuck jig.

In the conventional semiconductor wafer universal chuck mechanism, the semiconductor wafer is vacuum-sucked by vacuum equipment from a concentric multi-circular annular groove provided in the frame body to grind or polish the semiconductor wafer (for example, Patent Literature 1).
Japanese Unexamined Patent Publication No. 2000-232083 (FIGS. 1 and 2)

However, in the conventional semiconductor wafer universal chuck mechanism (see, for example, Patent Document 1), when the semiconductor wafer is vacuum-sucked, the semiconductor wafer is drawn into the annular groove portion to cause a warp. As a result, the semiconductor wafer is rubbed and scratches and defects are generated in the semiconductor wafer.
Such scratches and defects at the time of vacuum chuck, for example, cause etching defects when etching a semiconductor wafer, and it is desirable to realize a vacuum chuck device that does not cause scratches or defects at the processing site at the time of vacuum chucking. It was.

The present invention relates to a vacuum chuck jig in which scratches and defects are unlikely to occur in a processed portion of a substrate to be adsorbed such as silicon, a vacuum chuck method using the vacuum chuck jig, and an etching accuracy using the vacuum chuck jig. It is an object of the present invention to provide a method for manufacturing a high droplet discharge head.

The vacuum chuck jig according to the present invention has an adsorption hole for adsorbing the substrate to be adsorbed, and the adsorption hole is
It is provided on the outer peripheral portion outside the central portion that occupies a certain range from the center, on the surface that adsorbs the substrate to be attracted.
Since the suction hole is provided in the outer peripheral portion outside the center portion that occupies a certain range from the center of the surface on the side that sucks the substrate to be sucked, for example, when processing such as etching is not performed By adsorbing the outer peripheral portion of the substrate to be adsorbed, it is possible to prevent a scratch or a defect from being generated at a site where processing is performed, thereby suppressing an etching failure or the like.

In addition, the vacuum chuck jig according to the present invention is provided with an adsorption hole for adsorbing the substrate to be adsorbed at the center of the surface to adsorb the substrate to be adsorbed in addition to the adsorption holes provided in the outer peripheral portion. .
For example, when adsorbing a substrate to be adsorbed with the vacuum chuck jig according to the present invention and spin-coating a resist on the adsorbed substrate, if only the outer peripheral portion is adsorbed, the adsorbed substrate may be warped and coating may not be performed well. . For this reason, in addition to the suction holes provided in the outer peripheral portion, a suction hole for sucking the substrate to be sucked is provided at the center of the surface on the side for sucking the substrate to be sucked to prevent warpage of the substrate to be sucked. .

Further, the vacuum chuck jig according to the present invention is provided with a suction part in which a suction hole is formed,
The suction target substrate can be held only by the suction part.
Since the suction part with suction holes is projected and the suction target substrate can be held only by the suction part, the parts other than the suction part do not come into contact with the target suction substrate, and the vacuum chuck jig and the target suction substrate This reduces the number of parts that come into contact with each other, and can effectively suppress the generation of scratches and defects in the processed part.

The vacuum chuck jig according to the present invention has an adsorption hole for adsorbing an adsorbed substrate to be etched, and the adsorbing hole is constant from the center of the adsorbed substrate where the adsorbed substrate is not etched. The outer peripheral part outside the central part occupying the above range is adsorbed.
Because the suction hole sucks the outer peripheral part outside the center part that occupies a certain range from the center of the substrate to be adsorbed, where the substrate to be adsorbed is not etched, even if scratches or defects occur in the adsorption part, Scratches and defects do not occur at the site where processing is performed. Thereby, the etching defect etc. at the time of etching a to-be-adsorbed board | substrate can be suppressed.

The vacuum chuck jig according to the present invention has a suction hole for sucking the center of the substrate to be sucked in addition to the outer peripheral portion of the substrate to be sucked.
For example, when adsorbing a substrate to be adsorbed with the vacuum chuck jig according to the present invention and spin-coating a resist on the adsorbed substrate, if only the outer peripheral portion is adsorbed, the adsorbed substrate may be warped and coating may not be performed well. . For this reason, in addition to the outer periphery of the substrate to be adsorbed, an adsorption hole for adsorbing the center of the substrate to be adsorbed is provided to prevent warpage of the substrate to be adsorbed.

In the vacuum chuck jig according to the present invention, the suction hole that sucks the center of the substrate to be sucked sucks a portion of the substrate to be sucked that is not etched.
The suction hole that adsorbs the center of the substrate to be adsorbed adsorbs the part of the substrate to be adsorbed that is not etched, so that all the parts that are etched are not adsorbed. Can be prevented from occurring.

Further, the vacuum chuck jig according to the present invention is provided with a suction part in which a suction hole is formed,
The suction target substrate can be held only by the suction part.
Since the suction part with suction holes is projected and the suction target substrate can be held only by the suction part, the parts other than the suction part do not come into contact with the target suction substrate, and the vacuum chuck jig and the target suction substrate This reduces the number of parts that come into contact with each other, and can effectively suppress the generation of scratches and defects in the processed part.

In the vacuum chuck method according to the present invention, the substrate to be processed to be processed is not subjected to processing.
The outer peripheral part outside the central part occupying a certain range from the center of the substrate to be adsorbed is adsorbed.
For example, if the outer periphery of the substrate to be sucked that is processed using the vacuum chuck jig is sucked, scratches and defects can be prevented from occurring in the portion to be processed. Thus, etching defects and the like can be suppressed.

In addition, the vacuum chuck method according to the present invention is to adsorb the center of the substrate to be adsorbed in addition to the outer peripheral portion of the substrate to be adsorbed.
As described above, for example, if only the outer peripheral portion is adsorbed, the adsorbed substrate will be warped, so that the center of the adsorbed substrate is adsorbed in addition to the outer peripheral portion of the adsorbed substrate to prevent warpage of the adsorbed substrate, etc. It is.

Further, the vacuum chuck method according to the present invention sucks a portion of the substrate to be sucked that is not processed when sucking the center of the substrate to be sucked.
When adsorbing the center of the substrate to be adsorbed, the portion of the substrate to be adsorbed that is not processed is adsorbed, so that all the portions that are subjected to etching processing are not adsorbed, and scratches and defects occur in the processed portion Can be suppressed.

The method for manufacturing a droplet discharge head according to the present invention is to coat a resist by adsorbing a substrate to be adsorbed with any one of the above vacuum chuck jigs.
Since the substrate to be adsorbed is adsorbed by one of the vacuum chuck jigs described above and coated with a resist, scratches and defects are not generated in a portion where the substrate to be adsorbed is processed later, and etching defects are prevented. be able to.

The method for manufacturing a droplet discharge head according to the present invention is to expose a resist by adsorbing a substrate to be adsorbed by any one of the vacuum chuck jigs described above.
In order to expose the resist by adsorbing the substrate to be adsorbed with any of the above vacuum chuck jigs,
Scratches and defects do not occur in a portion that is later processed such as etching of the substrate to be adsorbed, and etching defects and the like can be prevented. In addition, for example, if the resist is exposed using a vacuum chuck jig having a suction hole that sucks the center of the substrate to be adsorbed in addition to the outer peripheral portion of the substrate to be adsorbed, warpage of the substrate to be adsorbed can be prevented. The patterning accuracy can be improved.

The method for manufacturing a droplet discharge head according to the present invention is to develop a resist by adsorbing a substrate to be adsorbed by any one of the above vacuum chuck jigs.
In order to develop the resist by adsorbing the substrate to be adsorbed with any of the above vacuum chuck jigs,
Scratches and defects do not occur in a portion that is later processed such as etching of the substrate to be adsorbed, and etching defects and the like can be prevented. In addition, for example, if the resist is developed using a vacuum chuck jig having a suction hole that sucks the center of the substrate to be adsorbed in addition to the outer periphery of the substrate to be adsorbed, warpage of the substrate to be adsorbed can be prevented. The patterning accuracy can be improved.

The method for manufacturing a droplet discharge head according to the present invention is to perform scrub cleaning by adsorbing a substrate to be adsorbed by any one of the vacuum chuck jigs described above.
In order to perform scrub cleaning by adsorbing the substrate to be adsorbed with any of the above vacuum chuck jigs,
Scratches and defects do not occur in a portion that is later processed such as etching of the substrate to be adsorbed, and etching defects and the like can be prevented.

Embodiment 1. FIG.
FIG. 1 is a perspective view showing a vacuum chuck jig according to Embodiment 1 of the present invention. Figure 2
3 is a perspective view showing another example of the vacuum chuck jig according to Embodiment 1 of the present invention, and FIG.
These are the longitudinal cross-sectional views of the vacuum chuck jig which concerns on Embodiment 1 of this invention. 1 to 4 show only the peripheral portion of the frame 1 provided with the suction portion 2 of the vacuum chuck jig, and a vacuum pump and the like for drawing a vacuum are omitted.
The vacuum chuck jig shown in FIG. 1 is provided with a plurality of suction portions 2 on the surface of the disk-shaped frame 1 made of metal or the like on the side that sucks the suction target substrate. The suction part 2 is formed with suction holes 3 for sucking a target substrate such as a silicon wafer. In FIG. 1, the suction hole 3 is provided in a tubular shape inside the suction part 2, but the suction hole 3 may be provided in a form opening to the upper surface of the suction part 2.

In the vacuum chuck jig shown in FIG. 1, one of the suction portions 2 in which the suction holes 3 are formed is provided at the center of the surface of the frame 1 on the side that sucks the suction target substrate. A plurality of suction portions 2 may be provided near the center of the frame 1. The remaining four suction parts 2 are arranged in the frame 1
Is provided on the outer peripheral portion of the surface that adsorbs the substrate to be adsorbed. Here, the outer peripheral portion refers to a portion outside the central portion that occupies a certain range from the center of the frame 1, and the suction portion 2 is not formed in the central portion except for the central suction portion 2. Further, the suction portion 2 provided with the suction holes 3
Is protruded from the frame 1, so that the substrate to be adsorbed does not come into contact with the frame 1 when the substrate to be adsorbed is adsorbed by the adsorption unit 2.

The vacuum chuck jig shown in FIG. 1 is used for adsorbing a disk-shaped substrate to be adsorbed whose radius is substantially the same as the radius of the frame 1. At this time, in order to align the center of the frame 1 with the center of the substrate to be sucked, the suction holes 3 formed in the suction portion 2 provided in the outer peripheral portion of the frame 1 other than the suction portion 2 provided in the center of the frame 1. Adsorbs the outer periphery of the substrate to be adsorbed. Note that the outer peripheral portion of the substrate to be attracted means the portion outside the central portion that occupies a certain range from the center of the substrate to be attracted, similarly to the outer peripheral portion of the frame 1.

The suction hole 3 formed in the suction portion 2 provided on the outer peripheral portion of the frame 1 sucks a portion where processing such as etching of the substrate to be sucked such as a silicon wafer is not performed. In other words, the outer peripheral portion of the substrate to be attracted adsorbed in these adsorption holes 3 is not subjected to processing such as etching after being adsorbed by the vacuum chuck jig. As a result, even if some scratches or defects occur in the portion adsorbed by the suction holes 3 of the substrate to be attracted, the scratches or defects do not spread due to processing such as etching, thereby suppressing etching defects and the like. be able to. Similarly, the suction hole 3 provided in the center of the frame 1 (the suction hole 3 that sucks the center of the substrate to be sucked) also sucks a portion that is not subjected to processing such as etching of the substrate to be sucked. In other words, the center of the substrate to be adsorbed in the adsorption hole 3 is not subjected to processing such as etching after being adsorbed by the vacuum chuck jig.
In the vacuum chuck jig shown in FIG. 1, two suction portions 2 in which three suction holes 3 are formed are provided in the frame 1. However, for example, one suction hole 3 may be provided. Further, the suction part 2 (suction hole 3) at the center of the frame 1 is not necessarily required. However, for example, when a vacuum chuck jig is used for resist spin coating or the like, in order to prevent warpage of the suction target substrate. In addition,
It is desirable to provide the suction part 2 at the center of the frame 1.

In the vacuum chuck jig shown in FIG. 2, as in the vacuum chuck jig shown in FIG. 1, one of the suction portions 2 in which the suction holes 3 are formed is the center of the surface of the frame 1 on the side that sucks the suction target substrate. Is provided. The other eight suction portions 2 are provided on the outer peripheral portion of the surface of the frame 1 on the side that sucks the substrate to be attracted. The definition of the outer peripheral portion and the central portion is the same as that of the vacuum chuck jig shown in FIG. 1, and the central portion of the frame 1 of the vacuum chuck jig shown in FIG. 2 is the same as the vacuum chuck jig shown in FIG. The suction part 2 is not formed except for the central suction part 2. Further, the suction part 2 provided with the suction holes 3 protrudes from the frame 1, so that when the suction target substrate 2 is suctioned by the suction part 2, the suction target substrate does not come into contact with the frame 1. Yes.

The usage method and effects of the vacuum chuck jig shown in FIG. 2 are substantially the same as those of the vacuum chuck jig shown in FIG. In the vacuum chuck jig shown in FIG. 2, eight suction portions 2 (suction holes 3) provided on the outer peripheral portion of the frame 1 are evenly provided at an angle of 45 degrees from the center of the frame 1. In this way, the substrate to be adsorbed is stabilized by making the lines connecting the two adsorbing portions 2 on the opposite electrode across the center orthogonal to each other (there are two sets of orthogonal lines in FIG. 2). Can be adsorbed and the adsorbing power is improved.

The vacuum chuck jig shown in FIG. 3 is similar to the vacuum chuck jig shown in FIGS.
One of the suction portions 2 in which the suction holes 3 are formed protrudes from the center of the surface of the frame 1 on the side that sucks the suction target substrate. Further, in the vacuum chuck jig shown in FIG. 3, the suction portion 2 provided on the outer peripheral portion of the surface of the frame 1 on which the suction target substrate is sucked is projected in an integral donut shape, and the suction hole 3 is formed. It is provided in the adsorption | suction part 2 so that it may become cyclic | annular. The definition of the outer peripheral portion and the central portion is the same as that of the vacuum chuck jig shown in FIGS. 1 and 2, and the vacuum shown in FIGS. 1 and 2 is placed in the central portion of the frame 1 of the vacuum chuck jig shown in FIG. Similar to the chuck jig, the central suction part 2
Except for, the adsorbing part 2 is not formed.
By providing an annular suction hole 3 in an integral donut-shaped suction portion 2 as shown in FIG.
The suction force can be further improved as compared with the vacuum chuck jig shown in FIGS.

FIG. 4 is a longitudinal sectional view of the vacuum chuck jig according to Embodiment 1 of the present invention. 4 is common to the vacuum chuck jig shown in FIGS. 1 to 3, and the suction portion 2 provided at the center of the frame 1 and the outer peripheral portion of the frame 1. It is a longitudinal cross-sectional view of the part which passes along the adsorption | suction part 2 provided in. Also, the dotted line in FIG. 4 shows a disk-shaped substrate (such as a silicon substrate) attached to a vacuum chuck jig.
As shown in FIG. 4, suction portions 2 are projected from the center and outer peripheral portion of the frame 1 of the vacuum chuck jig. An adsorption hole 3 is provided in the adsorption part 2, and each adsorption hole 3 communicates with a hollow tube 4. The hollow tube 4 is connected to a vacuum pump (not shown). By sucking a gas such as air in the direction of the arrow in FIG. A substrate to be adsorbed (not shown) is adsorbed.

In the first embodiment, the suction holes 3 provided in the outer peripheral portion of the frame 1 suck the outer peripheral portion outside the central portion that occupies a certain range from the center of the target substrate, where the target substrate is not etched. Therefore, even if a flaw or defect occurs in the adsorption site, the flaw or defect does not occur in the portion to be processed, and it is possible to suppress defective etching or the like when etching the substrate to be adsorbed. .
Further, in addition to the outer periphery of the substrate to be attracted, the suction hole 3 for attracting the center of the substrate to be attracted is provided to prevent warpage of the substrate to be attracted. Since the suction hole 3 that sucks the center of the substrate to be sucked also sucks a portion that is not subjected to processing such as etching, it is possible to suppress the occurrence of scratches or defects in the portion to be processed.
Further, the suction part 2 in which the suction hole 3 is formed protrudes, and since the part other than the suction part 2 does not contact the substrate to be attracted, the part where the vacuum chuck jig and the substrate to be attracted are reduced. In addition, it is possible to effectively suppress the generation of scratches and defects in the processed part.

Embodiment 2. FIG.
FIG. 5 is an exploded perspective view of a droplet discharge head according to Embodiment 2 of the present invention, and FIG. 6 is a longitudinal sectional view of the droplet discharge head shown in FIG. 7 and 8 are longitudinal sectional views showing manufacturing steps of the droplet discharge head shown in FIGS. In the second embodiment, a method for manufacturing a droplet discharge head using the vacuum chuck jig shown in the first embodiment will be described. In the second embodiment, a method for manufacturing a droplet discharge head using the vacuum chuck jig shown in the first embodiment will be described. However, the vacuum chuck jig shown in the first embodiment is not used for manufacturing a droplet discharge head. It can also be used.

FIG. 5 is an exploded perspective view of a droplet discharge head according to Embodiment 2 of the present invention, and a part thereof is shown in a cross-sectional view. 6 is a longitudinal sectional view of the state in which the droplet discharge head shown in FIG. 5 is assembled, and shows the right half of the droplet discharge head in FIG. The liquid droplet ejection heads shown in FIGS. 5 and 6 are of a face eject type that ejects liquid droplets from nozzle holes provided on the surface side of the nozzle substrate, and are electrostatically driven by electrostatic force. belongs to.
As shown in FIG. 5, the droplet discharge head 10 according to the second embodiment mainly includes a cavity substrate 11.
The electrode substrate 12 and the nozzle substrate 13 are configured. An electrode substrate 12 is bonded to one surface of the cavity substrate 11, and a nozzle substrate 13 is bonded to the other surface of the cavity substrate 11.
Are joined (see FIG. 6).

The cavity substrate 11 is made of, for example, single crystal silicon and includes a discharge chamber 15 having a bottom wall as a vibration plate 14 and a reservoir 17 for supplying droplets to each discharge chamber 15. In the first embodiment, the cavity substrate 11 is made of single crystal silicon, and plasma CVD is performed on the entire surface thereof.
(Chemical Vapor Deposition), TEOS (Tet
raEthyl OrthoSilicate) film is formed to a thickness of 0.1 μm to form an insulating film. This is for preventing dielectric breakdown and short-circuit when the diaphragm 14 is driven, and for preventing etching of the cavity substrate 11 by droplets of ink or the like.

The electrode substrate 12 bonded to the cavity substrate 11 uses, for example, borosilicate glass or single crystal silicon. When the electrode substrate 12 is made of borosilicate glass, the cavity substrate 11
The electrode substrate 12 is bonded by anodic bonding. When the electrode substrate 12 is made of single crystal silicon, the cavity substrate 11 and the electrode substrate 12 are joined by direct joining.
The electrode substrate 12 is formed with a gap G (see FIG. 6) for arranging the diaphragm 14 and the electrode 18 to face each other by etching a recess 19 for mounting the electrode 18 to 0.25 μm, for example. The concave portion 19 has an electrode 18, a lead portion 20, and a terminal portion 21 inside thereof.
The pattern is formed in a slightly larger shape similar to these shapes. The electrode 18 is formed, for example, in ITO (Indium Tin Oxide) inside the recess 19.
Is sputtered with a thickness of 0.1 μm to form an electrode pattern.
In the above example, the gap G after the cavity substrate 11 and the electrode substrate 12 are joined is 0.1.
5 μm.

The nozzle substrate 13 bonded to the cavity substrate 11 is, for example, a silicon substrate having a thickness of 180 μm. The nozzle substrate 22 is provided with nozzle holes 22 communicating with the respective discharge chambers 15 on the surface of the nozzle substrate 13. An orifice 16 that communicates with each other is provided. The orifice 16 may be provided in the cavity substrate 11. In the second embodiment, the nozzle hole 22 is a two-stage nozzle, and the straightness of droplets such as ink is improved by the rectifying action of the ink flow.

Here, the operation of the droplet discharge head shown in FIGS. 5 and 6 will be described. When a pulse voltage of about 0 V to 30 V is applied to the electrode 18 by the transmission circuit 25 (see FIG. 6) and the electrode 18 is positively charged, the corresponding vibration plate 14 is negatively charged and the vibration plate 14 is electroded by electrostatic force. Suck to the 18th side and bend. Next, when the pulse voltage is turned off, the electrostatic force applied to the diaphragm 14 disappears and the diaphragm 14 is restored. At this time, the pressure inside the discharge chamber 15 rises rapidly, and droplets such as ink are discharged from the nozzle holes 22. Then, a pulse voltage is applied again, and the diaphragm 14 is bent toward the electrode 18, whereby a droplet is supplied from the reservoir 17 into the discharge chamber 15 through the orifice 16.
The cavity substrate 11 and the transmission circuit 25 are connected by a common electrode 29 opened in a part of the cavity substrate 11 by dry etching. Further, the supply of droplets to the reservoir 17 of the droplet discharge head 10 is performed from the droplet supply port 23 formed in the electrode substrate 12 and the cavity substrate 11.

The vibration plate 14 of the droplet discharge head 10 according to the second embodiment is formed of a high-concentration boron-doped layer, and this boron-doped layer has the same thickness as the vibration plate 14. The etching rate in etching single crystal silicon with an alkaline solution such as an aqueous potassium hydroxide solution is very small in a high concentration region of about 5 × 10 ¹⁹ atoms / cm ³ or more when the dopant is boron. In the second embodiment, when the portion of the diaphragm 14 is a high-concentration boron-doped layer and the discharge chamber 15 is formed by anisotropic etching with an alkaline solution,
The diaphragm 14 is formed in a desired thickness by using a so-called etching stop technique in which the boron doped layer is exposed and the etching rate becomes extremely small.

7 and 8 are longitudinal sectional views showing manufacturing steps of the droplet discharge head shown in FIGS. 7 and 8 show the cavity substrate 11 of the droplet discharge head 10 shown in FIGS.
5 shows the AA cross section of FIG. 5, but the number of discharge chambers 15 is different, and the cavity substrate 11 (silicon substrate 11a) is turned upside down.
7 and 8, a method for manufacturing the cavity substrate 11 of the droplet discharge head 10 using the vacuum chuck jig shown in the first embodiment will be described. Here, the cavity substrate 1
A case where the thickness of one diaphragm 14 is formed to 0.8 μm will be described.

First, for example, both sides of a silicon substrate 11a having a plane orientation of (110) and a low oxygen concentration are mirror-polished to produce a silicon substrate 11a having a thickness of 140 μm (FIG. 7A).
Then, this silicon substrate 11a is set in a thermal oxidation furnace, subjected to thermal oxidation treatment in an oxygen and water vapor atmosphere at a temperature of 1075 ° C. for 4 hours, and the oxide film 31 is formed on both surfaces of the silicon substrate 11a.
For example, a film having a thickness of 1.2 μm is formed (FIG. 7B). In this thermal oxidation process, the charging temperature of the silicon substrate 11a is set to 800 ° C., and after the temperature is raised to 1075 ° C., the temperature when the silicon substrate 11a is taken out is also set to 800 ° C. Thereby, the region of 600 ° C. to 800 ° C. where the oxygen defect growth rate of the silicon substrate 11a is fast can be passed quickly, and the growth of oxygen defects can be suppressed.

Next, using the vacuum chuck jig as shown in FIGS.
Then, a resist for forming the reservoir 17 is patterned on the silicon substrate 11a. Specifically, first, the discharge chamber 15 and the reservoir 17 are formed in order to coat the entire surface of the surface opposite to the surface on which the discharge chamber 15 and the reservoir 17 are formed (upper surface in FIG. 7C). The surface (the lower surface in FIG. 7C) is adsorbed by a vacuum chuck jig, and the entire surface opposite to the surface on which the discharge chamber 15 and the like are formed is coated by spin coating or the like.
Thereafter, the surface opposite to the surface on which the discharge chamber 15 or the like is formed is sucked by a vacuum chuck jig, and the resist is coated on the surface on which the discharge chamber 15 or the like is formed by spin coating or the like, and the resist is exposed and developed. Patterning. Even when the resist is exposed and developed, the state opposite to the surface on which the discharge chamber 15 and the like are formed is maintained by the vacuum chuck jig.
Then, the silicon substrate 11a is removed from the vacuum chuck jig, and the oxide film 31 in the portion where the discharge chamber 15 and the reservoir 17 are formed is removed by etching with a buffered hydrofluoric acid solution (FIG. 7C).
)). 7 and 8, the portion of the reservoir 17 is not shown. Then, the resist on both sides of the silicon substrate 11a is peeled off.

Then, a resist is coated on the surface on which the discharge chamber 15 and the like are formed in order to remove the oxide film 31 on the surface opposite to the surface on which the discharge chamber 15 and the reservoir 17 are formed by etching. At this time, similarly to FIG. 7C, the surface opposite to the surface on which the discharge chamber 15 and the like are formed is adsorbed by a vacuum chuck jig as shown in FIGS. . Thereafter, the silicon substrate 11a is removed from the vacuum chuck jig and etched with a buffered hydrofluoric acid solution to remove the oxide film 31 opposite to the surface on which the discharge chamber 15 and the like are formed (FIG. 7D). Then, the resist is peeled from the surface where the discharge chamber 15 and the like are formed.

Next, scrub cleaning is performed to remove fine particles and metal adhering to the surface opposite to the surface on which the discharge chamber 15 and the like are formed. At this time, scrub cleaning is performed by adsorbing the surface on which the discharge chamber 15 and the like are formed with the vacuum chuck jig shown in the first embodiment. As scrub cleaning, brush scrub cleaning or ultrasonic scrub cleaning can be performed.
Then, a boron doped layer 32 is formed on the surface opposite to the surface where the discharge chamber 15 and the like are formed (FIG. 7E). Specifically, the silicon substrate 11a is set on a quartz boat so as to face a solid diffusion source containing B ₂ O ₃ as a main component, and this quartz boat is placed in, for example, a vertical furnace. Then, the inside of the vertical furnace is maintained in a nitrogen atmosphere at a temperature of 1050 ° C. for 7 hours, and boron is diffused into the silicon substrate 11 a to form the boron doped layer 32. At this time, similarly to the step of FIG. 7B, the temperature for introducing the silicon substrate 11a is set to 800 ° C., and after the temperature is raised to 1050 ° C., the temperature for taking out the silicon substrate 11a is also set to 800 ° C. As a result, the silicon substrate 11a
The oxygen defect growth rate can be quickly passed through the region of 600 ° C. to 800 ° C., and the growth of oxygen defects can be suppressed.

In the boron diffusion step of FIG. 7E, a SiB ₆ film (not shown) is formed on the surface of the boron dope layer 32, but it is oxidized for about 1 hour 30 minutes in an oxygen and water vapor atmosphere at a temperature of 600 ° C. By doing so, it can be chemically changed to B ₂ O ₃ and SiO ₂ that can be etched with a hydrofluoric acid aqueous solution. After the SiB ₆ film is chemically changed to B ₂ O ₃ and SiO ₂ in this way, a resist is coated on the surface opposite to the surface on which the discharge chamber 15 and the like are formed, and B ₂ O ₃ and B ₂ O ₃ with buffered hydrofluoric acid solution. SiO ₂ is removed, and then the resist is stripped. When coating this resist, the surface opposite to the surface on which the discharge chamber 15 and the like are formed is sucked by the vacuum chuck jig shown in the first embodiment.

Thereafter, a TEOS film 33 having a thickness of 3 μm is formed on the surface of the boron doped layer 32 by plasma CVD (FIG. 8F). The film formation conditions of the TEOS film 33 by this plasma CVD are, for example, a temperature of 360 ° C., a high frequency output of 700 W, and a pressure of 33.3 Pa (0.25 Torr).
TEOS flow rate 100 cm ³ / min (100 sccm), oxygen flow rate 1000 cm ³ / min (10
00 sccm). The TEOS film 33 serves as an etching mask for subsequent etching with an aqueous potassium hydroxide solution.
Then, the silicon substrate 11a is etched with a 35% by weight potassium hydroxide aqueous solution until the bottom wall of the recess 15a serving as the discharge chamber 15 has a thickness of 10 μm (FIG. 8G).

Further, the silicon substrate 11a is etched with a 3% by weight potassium hydroxide aqueous solution,
Etching is continued until the etching stop by the boron doped layer 32 is sufficiently effective (FIG. 8).
(H)). Here, the term “etching stop” refers to a state in which bubbles are no longer generated from the surface of the silicon substrate 11a to be etched, and etching is actually performed until no bubbles are generated. Thereby, the discharge chamber 15 is formed.
As described above, by performing etching using two kinds of potassium hydroxide aqueous solutions having different concentrations, the surface roughness of the diaphragm 14 which is the bottom wall of the discharge chamber 15 can be suppressed to 0.05 μm or less. The discharge performance of the droplet discharge head 10 can be stabilized.

After the etching with the potassium hydroxide aqueous solution is completed, the silicon substrate 11a is etched with the hydrofluoric acid aqueous solution to remove the oxide film 31 and the TEOS film 33 (FIG. 8I).
Thereafter, in order to clean the surface of the silicon substrate 11a, both surfaces of the silicon substrate 11a are subjected to O ₂ plasma treatment for 1 minute. The processing conditions of this O ₂ plasma processing are, for example, temperature 3
60 ° C., pressure 66.7 Pa (0.5 Torr), O ₂ flow rate 1000 cm ³ / min (1000 s
ccm) and a high frequency output of 250 W. TE formed later by this O ₂ plasma treatment
The uniformity of the insulation resistance of the OS insulating film 34 is improved.
Then, TEOS insulating films 34 having a thickness of 0.1 μm are formed on both surfaces of the silicon substrate 11a by plasma CVD (FIG. 8J). At this time, the film formation condition of the TEOS insulating film 34 is as follows.
For example, a temperature of 360 ° C., a high frequency output of 250 W, a pressure of 33.3 Pa (0.25 Torr),
TEOS flow rate 100 cm ³ / min (100 sccm), oxygen flow rate 1000 cm ³ / min (100
0 sccm).
Finally, each cavity substrate 11 is completed by dicing (cutting) the silicon substrate 11a (not shown in FIG. 8).

In the second embodiment, the silicon substrate 11a is adsorbed by the vacuum chuck jig shown in the first embodiment to perform resist coating, scrub cleaning, and the like. Does not occur, etching defects and the like can be prevented, and the yield can be improved.
In addition, since the resist is exposed and developed using the vacuum chuck jig having the suction hole 3 that sucks the center of the silicon substrate 11a, the warp of the silicon substrate 11a can be prevented and the resist patterning accuracy can be improved. Can do.

In the second embodiment, the example in which the vacuum chuck jig shown in the first embodiment is used for manufacturing the droplet discharge head is shown. However, the vacuum chuck jig shown in the first embodiment is not limited to the manufacturing of the droplet discharge head. Can be used. For example, in manufacturing a MEMS device (for example, an optical switch or the like) that requires processing on both sides of a silicon substrate, it is important that the silicon substrate is not damaged or defective. For this reason, if the vacuum chuck jig | tool which concerns on Embodiment 1 of this invention is used for manufacture of such a MEMS device, etc., it can suppress that a damage | wound and a defect generate | occur | produce in a silicon substrate etc., and a yield improves.

The vacuum chuck jig, the vacuum chuck method, and the droplet discharge head manufacturing method of the present invention are not limited to the embodiment of the present invention, and can be modified within the scope of the idea of the present invention.

The perspective view which showed the vacuum chuck jig | tool which concerns on Embodiment 1 of this invention. The perspective view which showed the other example of the vacuum chuck jig | tool which concerns on Embodiment 1 of this invention. The perspective view which showed the other example of the vacuum chuck jig | tool which concerns on Embodiment 1 of this invention. 1 is a longitudinal sectional view of a vacuum chuck jig according to Embodiment 1 of the present invention. FIG. 6 is an exploded perspective view of a droplet discharge head according to Embodiment 2 of the present invention. FIG. 6 is a longitudinal sectional view of the droplet discharge head shown in FIG. 5. FIG. 7 is a longitudinal sectional view showing a manufacturing process of the droplet discharge head shown in FIGS. 5 and 6. FIG. 8 is a longitudinal sectional view showing a step subsequent to the manufacturing step of FIG. 7.

Explanation of symbols

1 frame, 2 suction part, 3 suction hole, 4 hollow tube, 10 droplet discharge head, 11
Cavity substrate, 12 electrode substrate, 13 nozzle substrate, 14 diaphragm, 15 discharge chamber, 1
6 orifice, 17 reservoir, 18 electrode, 19 recess, 22 nozzle hole, 23 droplet supply port, 25 transmitter circuit, 29 common electrode.

Claims (14)

It has an adsorption hole for adsorbing the substrate to be adsorbed, and the adsorption hole is provided on the outer peripheral portion outside the center portion occupying a certain range from the center of the surface on the side to adsorb the substrate to be adsorbed. Vacuum chuck jig. 2. The vacuum chuck according to claim 1, wherein an adsorption hole for adsorbing the substrate to be adsorbed is provided in the center of the surface on the side for adsorbing the substrate to be adsorbed, in addition to the adsorption holes provided in the outer peripheral portion. jig. The vacuum chuck jig according to claim 1, wherein a suction part in which the suction hole is formed protrudes, and the suction target substrate can be held only by the suction part. An adsorption hole for adsorbing a substrate to be adsorbed that is subjected to etching processing, the adsorption hole being outside the center portion that is not subjected to etching processing of the substrate to be adsorbed and occupies a certain range from the center of the substrate to be adsorbed A vacuum chuck jig characterized by adsorbing an outer peripheral portion. The vacuum chuck jig according to claim 4, further comprising a suction hole for sucking a center of the substrate to be suctioned in addition to the outer peripheral portion of the substrate to be suctioned. 6. The vacuum chuck jig according to claim 5, wherein the suction hole that sucks the center of the substrate to be sucked sucks a portion of the substrate to be sucked that is not etched. The vacuum chuck treatment according to any one of claims 4 to 6, wherein a suction part in which the suction hole is formed protrudes and the suction target substrate can be held only by the suction part. Ingredients. A vacuum chuck method characterized by adsorbing an outer peripheral portion outside a central portion occupying a certain range from the center of the substrate to be adsorbed, which is not subjected to processing, of an adsorbed substrate to be processed. 9. The vacuum chuck method according to claim 8, wherein the center of the substrate to be adsorbed is adsorbed in addition to the outer peripheral portion of the substrate to be adsorbed. The vacuum chuck method according to claim 9, wherein when the center of the substrate to be sucked is sucked, a portion of the substrate to be sucked that is not processed is sucked. A method for manufacturing a droplet discharge head, comprising: adsorbing a substrate to be adsorbed with the vacuum chuck jig according to claim 1 to coat a resist. A method for manufacturing a droplet discharge head, comprising: adsorbing a substrate to be adsorbed with the vacuum chuck jig according to claim 1 to expose a resist. A method for manufacturing a droplet discharge head, comprising: adsorbing a substrate to be adsorbed with the vacuum chuck jig according to claim 1 to develop a resist. A method for manufacturing a droplet discharge head, comprising: scrubbing the substrate to be adsorbed with the vacuum chuck jig according to claim 1.

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