JP2006053579A5 - - Google Patents

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JP2006053579A5
JP2006053579A5 JP2005277058A JP2005277058A JP2006053579A5 JP 2006053579 A5 JP2006053579 A5 JP 2006053579A5 JP 2005277058 A JP2005277058 A JP 2005277058A JP 2005277058 A JP2005277058 A JP 2005277058A JP 2006053579 A5 JP2006053579 A5 JP 2006053579A5
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polymer
substrate
waveguide
region
layer
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JP4215764B2 (en
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ポリマ層から構成され又はポリマ層を主体に構成された光導波路を持つ第1の領域と前記光導波路を持たない第2の領域を同一基板上に有するポリマ導波路基板の製造方法であって、基板表面に光導波路を構成するための前記ポリマ層の面と基板との密着性または接着性を向上するための接着層を前記第1の領域には設け、前記第2の領域には設けず、前記第1の領域に前記接着層を設けた後に、前記ポリマ層を基板全面に形成する工程を用いて光導波路を作製し、第1の領域と第2の領域との境界の前記ポリマ層を切断して、前記第2の領域の前記ポリマ層を前記基板から剥離・除去する工程を有することを特徴とするポリマ導波路基板の製造方法。 A method of manufacturing a polymer waveguide substrate having a first region having an optical waveguide composed of a polymer layer or mainly composed of a polymer layer and a second region not having the optical waveguide on the same substrate, An adhesive layer for improving the adhesion or adhesion between the surface of the polymer layer and the substrate for forming the optical waveguide on the substrate surface is provided in the first region, and not provided in the second region. Then, after providing the adhesive layer in the first region, an optical waveguide is produced using a step of forming the polymer layer on the entire surface of the substrate, and the polymer layer at the boundary between the first region and the second region is formed. A method of manufacturing a polymer waveguide substrate, comprising: cutting the polymer layer in the second region from the substrate. 前記第2の領域に半導体素子を実装するための電極を有する前記ポリマ導波路基板の製造方法であって、接着層を形成する前に前記電極を前記基板上に作製することを特徴とする請求項1記載のポリマ導波路基板の製造方法。 The method of manufacturing the polymer waveguide substrate having an electrode for mounting a semiconductor element in the second region, wherein the electrode is formed on the substrate before forming an adhesive layer. Item 12. A method for producing a polymer waveguide substrate according to Item 1. 前記ポリマ層切断にダイシング装置を使用し、且つ前記ダイシング装置で形成する溝の底面が前記基板にまで達していることを特徴とする請求項1記載のポリマ導波路基板の製造方法。 2. The method of manufacturing a polymer waveguide substrate according to claim 1, wherein a dicing device is used for cutting the polymer layer, and a bottom surface of a groove formed by the dicing device reaches the substrate. 前記基板がシリコン基板、酸化シリコン膜を有するシリコン基板、ガラス基板、またはセラミック基板のいずれか一であることを特徴とする請求項1乃至3のいずれか一に記載のポリマ導波路基板の製造方法。 4. The method of manufacturing a polymer waveguide substrate according to claim 1, wherein the substrate is any one of a silicon substrate, a silicon substrate having a silicon oxide film, a glass substrate, and a ceramic substrate. . 前記導波路を構成する前記ポリマ層にフッ素を含有するポリマを用いたことを特徴とする請求項1乃至4のいずれか一に記載のポリマ導波路基板の製造方法。The method for producing a polymer waveguide substrate according to claim 1, wherein a polymer containing fluorine is used for the polymer layer constituting the waveguide. 前記導波路を構成する前記ポリマ層の最下層がフッ素を含有するポリマから成ることを特徴とする請求項に記載のポリマ導波路基板の製造方法。 6. The method of manufacturing a polymer waveguide substrate according to claim 5 , wherein the lowermost layer of the polymer layer constituting the waveguide is made of a polymer containing fluorine. 前記導波路を構成する前記ポリマ層にフッ素化ポリイミドを用いたことを特徴とする請求項5又は6に記載のポリマ導波路基板の製造方法。 7. The method of manufacturing a polymer waveguide substrate according to claim 5, wherein fluorinated polyimide is used for the polymer layer constituting the waveguide. 前記導波路を構成する前記ポリマ層の最下層にフッ素化ポリイミドを用いる特徴とする請求項に記載のポリマ導波路基板の製造方法。 8. The method of manufacturing a polymer waveguide substrate according to claim 7 , wherein fluorinated polyimide is used for a lowermost layer of the polymer layer constituting the waveguide. 前記接着層がポリイミドシリコン樹脂、フッ素を含有しないポリイミド樹脂、有機アルミニウム化合物、有機ジルコニア化合物、有機チタン化合物のいずれか一であるか、またはその組み合わせから成ることを特徴とする請求項1乃至のいずれか一に記載のポリマ導波路基板の製造方法。 The adhesive layer is a polyimide silicone resin, a polyimide resin containing no fluorine, organic aluminum compounds, organic zirconium compound, or an any organic titanium compound, or of claims 1 to 8, characterized in that it consists of the combination The manufacturing method of the polymer waveguide board | substrate as described in any one. ポリマ層から構成された光導波路を持つ第1の領域と光導波路を持たない第2の領域とを同一基板上に有するポリマ導波路基板であって、前記第一の領域の導波路を構成する最下のポリマ層と前記基板との間に両者の密着性または接着性を向上するための接着層を有し、且つ、前記第1の領域と前記第2の領域の境界に前記基板まで切り込んだ溝を有し、前記基板上の前記第2の領域には前記接着層をエッチング除去した後のエッチング面を有することを特徴とするポリマ導波路基板。 A polymer waveguide substrate having a first region having an optical waveguide composed of a polymer layer and a second region having no optical waveguide on the same substrate, which constitutes the waveguide of the first region An adhesive layer for improving adhesion or adhesion between the lowermost polymer layer and the substrate is provided, and the substrate is cut to the boundary between the first region and the second region. it has a groove, polymer optical waveguide substrate wherein the second region on the substrate and having an etched surface after the adhesive layer is removed by etching. 前記第2の領域の前記エッチング面は、酸素の反応性イオンエッチング又はフッ酸水溶液によるウエットエッチングにより形成されたものである請求項10記載のポリマ導波路基板。11. The polymer waveguide substrate according to claim 10, wherein the etching surface of the second region is formed by oxygen reactive ion etching or wet etching using a hydrofluoric acid aqueous solution. 前記第2の領域に半導体素子を実装するための電極を有することを特徴とする請求項10又は11記載のポリマ導波路基板。 12. The polymer waveguide substrate according to claim 10, further comprising an electrode for mounting a semiconductor element in the second region. 前記電極は、異物の付着や凹凸がないことを特徴とする請求項12記載のポリマ導波路基板。The polymer waveguide substrate according to claim 12, wherein the electrode is free from adhesion of foreign matter and unevenness. 前記基板がシリコン基板、酸化シリコン膜を有するシリコン基板、ガラス基板、セラミック基板のいずれか一であることを特徴とする請求項10乃至13のいずれか一に記載のポリマ導波路基板。 14. The polymer waveguide substrate according to claim 10 , wherein the substrate is any one of a silicon substrate, a silicon substrate having a silicon oxide film, a glass substrate, and a ceramic substrate. 前記導波路を構成する前記ポリマ層にフッ素を含有するポリマを用いたことを特徴とする請求項10乃至14のいずれか一に記載のポリマ導波路基板。The polymer waveguide substrate according to claim 10, wherein a polymer containing fluorine is used for the polymer layer constituting the waveguide. 前記導波路を構成する前記ポリマ層の最下層がフッ素を含有するポリマから成ることを特徴とする請求項15に記載のポリマ導波路基板。 16. The polymer waveguide substrate according to claim 15 , wherein the lowermost layer of the polymer layer constituting the waveguide is made of a polymer containing fluorine. 前記導波路を構成するポリマ層にフッ素化ポリイミドを用いたことを特徴とする請求項15又は16に記載のポリマ導波路基板。 The polymer waveguide substrate according to claim 15 or 16 , wherein a fluorinated polyimide is used for a polymer layer constituting the waveguide. 前記導波路を構成する前記ポリマ層の最下層にフッ素化ポリイミドを用いた特徴とする請求項17記載のポリマ導波路基板。 18. The polymer waveguide substrate according to claim 17, wherein a fluorinated polyimide is used for a lowermost layer of the polymer layer constituting the waveguide. 前記接着層がポリイミドシリコン樹脂、フッ素を含有しないポリイミド樹脂、有機アルミニウム化合物、有機ジルコニア化合物、有機チタン化合物のいずれか一であるか、またはその組み合わせから成ることを特徴とする請求項10乃至18のいずれか一に記載のポリマ導波路基板。 The adhesive layer is a polyimide silicone resin, a polyimide resin containing no fluorine, organic aluminum compounds, organic zirconium compound, or an any organic titanium compound, or of claims 10 to 18, characterized in that it consists of the combination The polymer waveguide substrate according to any one of the above. 請求項10乃至19のいずれか一に記載のポリマ導波路基板の中間部品であって、前記基板上の前記第1の領域にのみ接着層を設けた基板全面にポリマ層が形成されたポリマ導波路基板用部材。20. An intermediate part of a polymer waveguide substrate according to claim 10, wherein a polymer layer is formed on the entire surface of the substrate in which an adhesive layer is provided only in the first region on the substrate. Waveguide substrate member. 前記ポリマ層の最下層がフッ素を含有するポリマから成ることを特徴とする請求項21に記載のポリマ導波路基板用部材。The polymer waveguide substrate member according to claim 21, wherein the lowermost layer of the polymer layer is made of a polymer containing fluorine.
JP2005277058A 2005-09-26 2005-09-26 Optical waveguide and optical waveguide manufacturing method Expired - Fee Related JP4215764B2 (en)

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JP27812999A Division JP3774598B2 (en) 1999-09-30 1999-09-30 Method of manufacturing polymer waveguide substrate and polymer waveguide substrate

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JP2006053579A JP2006053579A (en) 2006-02-23
JP2006053579A5 true JP2006053579A5 (en) 2006-11-02
JP4215764B2 JP4215764B2 (en) 2009-01-28

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EP4053608A4 (en) 2019-10-31 2023-11-29 Kyocera Corporation Optical waveguide package and light emitting device

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