JP2006049919A - X-ray projection exposure apparatus and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an X-ray projection exposure apparatus which can restrain the distortion of a reflection mask due to a temperature by surely supporting and fixing the reflection mask even if the apparatus operates in a vacuum atmosphere or a reduced-pressure light element gas. <P>SOLUTION: The X-ray projection exposure apparatus comprises an illuminating system which illuminates a reflection type mask 1 with X-rays, a projection optical system which projects the image of the pattern of the reflection type mask onto a wafer, a holding means 32 which holds the reflection type mask 1 by electrostatic force, and temperature adjusting means 41 and 42 which adjust the temperature of the holding means. The reflection type mask 1 has a multilayer film in which the pattern is formed on a surface thereof, and a substrate in which the multilayer film is formed in a predetermined region of a surface thereof. The holding means 32 holds a rear surface which is opposed to the surface of the substrate. The temperature adjusting means 41 and 42 adjust the temperature of a part holding the rear surface which is opposed to the predetermined region of the surface of the substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an X-ray projection exposure apparatus used for manufacturing a semiconductor integrated circuit.

  In solid state devices such as LSIs, circuit patterns have been miniaturized in order to improve the degree of integration and operation speed. In order to form these fine circuit patterns, the use of a reduction projection exposure apparatus that uses vacuum ultraviolet light as the exposure light is currently being studied. The resolution of the reduction projection exposure apparatus depends on the exposure wavelength λ and the numerical aperture NA of the projection optical system. Conventional exposure apparatuses employ a method of increasing the numerical aperture NA in order to improve the resolution.

  However, this method is approaching its limit due to the reduced depth of focus and the difficulty in designing and manufacturing refractive optical systems. For this reason, a method for improving the resolution of the exposure apparatus by shortening the exposure wavelength λ has been studied. From the g-line (λ = 435.8 mm) to the i-line (λ = 365 mm) of the mercury lamp, and further the KrF excimer laser (λ = 248 mm), the light used for exposure has shifted.

  Although the resolution of the exposure apparatus is improved by shortening the exposure wavelength, there is a theoretical limit to the resolution from the wavelength of light used for exposure. Therefore, it has been difficult to obtain a resolution of 0.1 μm or less with the conventional technique for extending an exposure apparatus using light.

  Based on such a technical background, in recent years, an X-ray projection exposure apparatus that uses vacuum ultraviolet rays or soft X-rays (hereinafter collectively referred to as X-rays) as exposure light has attracted attention.

  The present invention has been made to solve various problems that occur in putting the above-described X-ray projection exposure apparatus into practical use and to provide a practical X-ray projection exposure apparatus. It is another object of the present invention to provide a highly productive semiconductor device manufacturing method using the X-ray projection exposure apparatus.

In order to achieve the above object, an X-ray projection exposure apparatus of the present invention comprises an illumination system that illuminates a reflective mask with X-rays,
A projection optical system that projects an image of the pattern of the reflective mask onto a wafer;
Holding means for holding the reflective mask with electrostatic force;
Temperature adjusting means for adjusting the temperature of the holding means;
With
The reflective mask is
A multilayer film having the pattern formed on the surface;
A substrate on which the multilayer film is formed in a predetermined region on the surface;
Have
The holding means is
Holding the back surface of the substrate facing the front surface;
The temperature adjusting means includes
The temperature of a portion of the holding means that holds the region of the back surface facing the predetermined region of the front surface of the substrate is adjusted.

At this time, the temperature adjusting means
There may be provided a supply means for supplying a temperature adjusting medium to a portion of the holding means facing the predetermined area of the surface of the substrate,
The holding means is
A chuck for holding the back surface of the substrate with electrostatic force;
A chuck base to which the chuck is fixed;
Have
The temperature adjusting means includes
The chuck base may have the supply means.

Further, the temperature adjusting means includes
It may have a temperature sensor for detecting the temperature of the holding means,
It may have a temperature sensor for detecting the temperature of the chuck base,
A Peltier element may be used.

  In a preferred embodiment of the device manufacturing method of the present invention, the wafer is exposed using the X-ray projection exposure apparatus, and the exposed wafer is developed.

  The X-ray projection exposure apparatus as described above has a holding means for holding the back surface of the reflective mask substrate with electrostatic force, so that it is in a vacuum atmosphere where X-ray attenuation is small or in a light element gas atmosphere where the pressure is reduced. Even so, the reflective mask can be reliably supported and fixed.

  In addition, the temperature adjustment means adjusts the temperature of the portion of the holding means that holds the area on the back surface opposite to the predetermined area on the front surface of the substrate, so that the reflective mask placed in a vacuum atmosphere that is difficult to cool is removed. It becomes possible to cool effectively from the back side.

  According to the present invention, the holding means for holding the back surface of the reflective mask substrate by electrostatic force allows reflection even in a vacuum atmosphere in which the attenuation of X-rays is small or in a light element gas atmosphere having a reduced pressure. The mold mask can be securely supported and fixed.

  In addition, the temperature adjustment means adjusts the temperature of the portion of the holding means that holds the area on the back surface opposite to the predetermined area on the front surface of the substrate, so that the reflective mask placed in a vacuum atmosphere that is difficult to cool is removed. It becomes possible to cool effectively from the back surface, and distortion due to temperature of the circuit pattern formed on the reflective mask can be suppressed.

  Further, by including the temperature adjusting means, the thermal deformation and positional deviation of the reflective mask are prevented, and the transfer pattern overlay accuracy and line width accuracy are improved. In addition, the shape of the reflective mask can be changed according to the temperature by means of temperature control means, so the surface position of the mirrors that make up the projection optical system, errors in the placement position, and the position of the pattern due to deformation of the mirrors due to external forces when supported The deviation can be corrected, and the pattern overlay accuracy is further improved.

  Next, the present invention will be described with reference to the drawings.

  FIG. 1 is a side view showing a main configuration of an X-ray projection exposure apparatus.

  In FIG. 1, an X-ray illumination system comprising an undulator source 101 that is a radiation source of X-rays (vacuum ultraviolet rays or soft X-rays), a convex total reflection mirror 102 and a concave multilayer reflector 103 that change the optical path of the X-rays. The X-rays emitted from the laser beam are applied to a reflective X-ray mask (hereinafter referred to as a mask) 104. A multilayer film that regularly reflects X-rays is formed on the mask 104, and a predetermined circuit pattern is formed on the multilayer film.

  The X-ray reflected by the mask 104 reaches the wafer 106 through the reduction projection optical system 105 composed of a plurality of reflecting mirrors, and forms a circuit pattern on the wafer 106 at a predetermined projection magnification (for example, 1/5). Form an image.

  Here, since the wavelength of X-rays used for exposure is approximately 20 nm to 4 nm, the fundamental resolving power according to the wavelength of exposure light is improved.

  The mask 104 is fixedly held on the mask stage 107, and the wafer 106 is fixedly held on the wafer stage 108. The mask 104 and the wafer 106 are aligned by the mask stage 107 and the wafer stage 108. The mask stage 107 and the wafer stage 108 scan and move in synchronization.

  By the way, since vacuum ultraviolet rays and soft X-rays are greatly attenuated by gas, each apparatus shown in FIG. 1 is placed in a vacuum atmosphere or an atmosphere of a light element gas (such as helium) having a reduced pressure. Therefore, an electrostatic chuck suitable for use in a vacuum atmosphere or a light element gas atmosphere having a reduced pressure is used as a mechanism for fixing and holding the mask 104 on the mask stage 107. An electrostatic chuck is a chuck that utilizes the principle that electrostatic charges are applied to an adsorbate by causing a charge of a different sign from that applied to the encapsulating electrode to be excited by an insulator on the surface and causing a dielectric polarization phenomenon. King means. The adsorption force F of the electrostatic chuck is expressed by the following equation in the case of a monopolar electrostatic chuck.

F = S / 2 × ε × (V / d) ²
S: Electrode chuck electrode area
ε: dielectric constant of insulator
V: Applied voltage
d: Thickness of the insulator on the surface However, the above formula is not always obtained under various conditions.

As another example of the electrostatic chuck, there is a bipolar electrostatic chuck that does not require the object to be attracted to be connected to the ground (ground potential) and is easy to handle. The attracting force of this bipolar electrostatic chuck is less than half that of the above-mentioned monopolar electrostatic chuck. For example, high-purity Al ₂ O ₃ with very little metal contamination is used for the insulator on the surface of the electrostatic chuck. In some cases, the adsorption force is about 25 (g / cm ² ).

  The mask 104 includes a base made of a Si substrate or the like and a pattern region in which a circuit pattern is formed on a multilayer film. If the size of the pattern region is 200 mm square, the thickness is several μm, the base size is 210 mm square, the thickness is 10 mm, and the material is Si, the mass of the mask 104 is about 1 kg.

Here, when the exposure of one shot requires 0.5 sec, the mask stage 107 needs to scan a distance of 200 mm within 0.5 sec. Therefore, assuming the mask stage 107 that reaches a scanning speed of 400 (mm / sec) in 0.05 sec, the maximum acceleration of the mask stage 107 is 8 (m / sec ² ). In particular, when the mask 104 is supported parallel to the direction of gravity, since the gravitational acceleration is applied to the mask 104 in addition to the maximum acceleration, the force in the scanning direction applied to the mask 104 is approximately 1 kg. About 18N.

On the other hand, the chucking force of the electrostatic chuck with respect to the mask 104 is 21 (cm) × 21 (cm) × 0.025 (Kg / cm ² ) × 9.8 (m / sec ² ) = 100 (N). In order not to drop the mask 104, the static friction coefficient between the electrostatic chuck and the mask 104 may be set to 0.18 or more.

  However, since the flatness of the surface of the electrostatic chuck is generally finished with high accuracy, the coefficient of friction is small, and in the worst case, the mask 104 may be dropped. Therefore, in the present invention, the chucking force of the electrostatic chuck with respect to the mask 104 is adjusted to an optimum value according to the situation to prevent a fall accident. A specific configuration for this is shown below.

(First embodiment)
FIG. 2 is a side sectional view showing the configuration of the first embodiment of the mask support apparatus used in the mask stage of the X-ray projection exposure apparatus shown in FIG.

  In FIG. 2, a reflective X-ray mask (hereinafter referred to as a mask) 1 which is an optical element is composed of a base 1a made of a Si substrate and a pattern region 1b, and a thin film such as magnetron sputtering vapor deposition is formed on the base 1a. A pattern region 1b is formed by the forming means.

  The pattern region 1b is composed of a region having a low reflectance with respect to X-rays such as vacuum ultraviolet rays or soft X-rays, and a circuit pattern portion that is a region having a high reflectance. An X-ray absorber (for example, gold or tungsten) is formed by patterning on an X-ray reflective multilayer film in which at least two kinds of substances having different refractive indexes are alternately stacked.

  The mask support device for holding the mask 1 includes an electrostatic chuck 2 (bipolar type) that attracts the mask 1, a plurality of pin-shaped protrusions 6 formed on the electrostatic chuck 2, and a mask. 1, a pressure sensor (adsorption force detecting means) 11 that detects the adsorption force of the electrostatic chuck 2 with respect to 1, an adsorption control unit 12 that calculates the adsorption force from the detection result of the pressure sensor 11, and an adsorption force calculated by the adsorption control unit 12 The voltage control unit 10 that outputs a voltage for adjusting the suction force, and the drive control unit 9 that outputs a scanning command for the electrostatic chuck 2 to which the mask 1 is sucked. The electrostatic chuck 2 is fixed to a driving mechanism (mask stage) (not shown) that scans and moves the electrostatic chuck 2 according to a command from the drive control unit 9.

  A supply pipe 7 for supplying a cooling gas (such as helium) and a recovery pipe 8 for recovering the cooling gas are provided in the gap between the mask 1 and the electrostatic chuck 2 formed by a large number of protrusions 6. Each is provided.

  The electrostatic chuck 2 includes a first insulating layer 3 and a second insulating layer 4, and a plurality of pin-shaped protrusions 6 are formed on the first insulating layer 3. Further, a first electrode 5a and a second electrode 5b for generating an adsorption force are formed between the first insulating layer 3 and the second insulating layer 4, respectively.

  In such a configuration, when a voltage is applied from the voltage control unit 10 to the first electrode 5a and the second electrode 5b of the electrostatic chuck 2, charges having different signs are excited on the surface of the first insulating layer 3. Is done. At this time, a dielectric polarization phenomenon occurs on the surface of the first insulating layer 3, and an electrostatic force works with the mask 1. As a result, the mask 1 is attracted onto the electrostatic chuck 2 and supported and fixed on the plurality of pin-shaped protrusions 6 (so-called pin chuck shape).

  Here, since the contact area of the protrusion 6 with respect to the mask 1 is set to 10% or less (more preferably 2% or less) of the area of the mask 1, it is generated by dust sandwiched between the mask 1 and the electrostatic chuck 2. The deformation of the mask 1 is prevented.

  In addition, since the cooling gas is allowed to flow in the gap between the mask 1 and the electrostatic chuck 2, the mask 1 placed in a vacuum atmosphere that is difficult to cool can be effectively cooled from the back surface. The distortion due to the temperature of the circuit pattern formed on the mask 1 can be suppressed.

By the way, the electrostatic chuck 2 is scanned by a command from the drive control unit 9 in order to enlarge an irradiation area on the mask 1. At this time, the suction controller 12 calculates the acceleration applied to the mask 1 from the position information of the electrostatic chuck 2 detected by the drive controller 9,
{(Mass of mask) × (gravity acceleration + maximum acceleration during movement) / (maximum static friction coefficient between mask and electrostatic chuck)} × (safety factor) <(adsorption force) (1)
However, it is defined by (adsorption force) = (electrostatic generation force) − (differential pressure between the pressure of the cooling gas and the atmospheric pressure).
A command is sent to the voltage control unit 10 so as to obtain an adsorption force that satisfies the following equation. The voltage control unit 10 applies a predetermined voltage to each of the first electrode 5a and the second electrode 5b in accordance with a command from the adsorption control unit 12.

  The suction force may be fixed to a predetermined value, and the suction control unit 12 may give a command to the drive control unit 9 so that the acceleration applied to the mask 1 satisfies the expression (1).

  With the configuration as described above, an accident that the mask 1 falls from the electrostatic chuck 2 can be prevented.

(Second embodiment)
FIGS. 3A and 3B are views showing the configuration of the second embodiment of the mask support device, where FIG. 3A is a perspective view and FIG. 3B is a side sectional view.

  In the mask support apparatus of the first embodiment, an example using a bipolar electrostatic chuck is shown. In the mask support apparatus of the present embodiment, an example in which a monopolar electrostatic chuck having a strong suction force is used will be described. In FIG. 3, only the configuration added in the present embodiment is illustrated, and the adsorption control unit, the voltage control unit, and the drive control unit illustrated in the first example are not illustrated. Since the operation of these devices is the same as that of the first embodiment, the description thereof is omitted.

  Further, when the mask is attracted to the monopolar electrostatic chuck, it is necessary to connect the mask to the ground (ground potential). However, since the mask is transported into the exposure apparatus and attached to and detached from the electrostatic chuck, it is difficult to always connect to the ground. Therefore, in the mask support apparatus of this embodiment, the mask is connected to the ground only when the mask is attracted onto the electrostatic chuck so as not to hinder the transfer of the mask.

  3A and 3B, the mask 21 includes a base 21a made of an Si substrate and a pattern region 21b, and the pattern region 21b is formed on the base 21a.

  The mask support device that sucks and holds the mask 21 includes an electrostatic chuck 22 that sucks the mask 21 and a ground claw 26 for connecting the mask 21 to the ground.

  The electrostatic chuck 22 includes a first insulating layer 23 and a second insulating layer 24, and an electrode 25 for generating an adsorption force is provided between the first insulating layer 23 and the second insulating layer 24. Is formed. The grounding claw 26 is connected to the minus (−) terminal (ground potential) of the power supply 27, and the plus (+) terminal of the power supply 27 is connected to the electrode 25.

  In such a configuration, when a positive (+) potential of the power source 27 is applied to the electrode 25 of the electrostatic chuck 22, charges having different signs are excited on the surface of the first insulating layer 23. At this time, a dielectric polarization phenomenon occurs on the surface of the first insulating layer 23, and an electrostatic force acts between the mask 21. As a result, the mask 21 is attracted and fixed onto the electrostatic chuck 22.

  The grounding claw 26 is fixed to the electrostatic chuck 22 so as to be movable in the Z direction of FIG. 2 (the thickness direction of the electrostatic chuck 22), and contacts the base 21a of the mask 21 to connect the mask 21 to the ground. This makes it possible to support the masks 21 having various thicknesses. Note that the grounding claw 26 is disposed on the side surface of the base 21 a to prevent the mask 21 from falling.

  Incidentally, the attracted object that can be attracted by the electrostatic chuck 22 is a conductor or a semiconductor. Therefore, when adsorbing the mask 21 having the base 21a made of an insulator, a metal or the like as a conductor is evaporated from the back surface to the side surface of the mask 21, and the mask 21 is adsorbed by bringing this into contact with the ground claw 26. .

  With the above-described configuration, since the single-pole electrostatic chuck having a strong adsorption force can be used as the mask support device, the reliability of mask fixation can be improved. In addition, since a sufficient adsorbing force can be obtained even with a material having a relatively low dielectric constant, the mask 21 can be formed of a material with less metal contamination, and a semiconductor can be formed by an exposure apparatus equipped with the mask support device of this embodiment. When a device is manufactured, the production yield of semiconductor devices can be improved.

  Further, since the grounding claw 26 is fixed so as to be movable in the thickness direction of the electrostatic chuck 22, the mask 21 having various thicknesses can be supported and fixed. Therefore, the manufacturing accuracy in the thickness direction of the mask 21 is relaxed, and the manufacturing cost of the mask can be reduced. Furthermore, since the grounding claw 26 also has a function of preventing the mask 21 from falling, the reliability of the mask fixing is further improved.

In addition, since the structure is connected to the ground only when the mask 21 is attracted to the electrostatic chuck, the ground mechanism does not hinder the transfer of the mask.
(Third embodiment)
FIG. 4 is a side sectional view showing the configuration of the third embodiment of the mask support apparatus.

  The mask support apparatus of the present embodiment has temperature adjusting means for controlling the electrostatic chuck to a desired temperature. In FIG. 4, only the configuration added in the present embodiment is illustrated, and the adsorption control unit and the voltage control unit illustrated in the first embodiment are not illustrated. Since the operation of these devices is the same as that of the first embodiment, the description thereof is omitted.

  In FIG. 4, a mask 31 is composed of a base 31a made of a Si substrate and a pattern region 31b, and a pattern region 31b is formed on the base 31a.

  The mask support device that sucks and holds the mask 31 includes an electrostatic chuck 32 that sucks the mask, a chuck base 38 that is formed of a material having a small temperature expansion coefficient and high rigidity, and to which the electrostatic chuck 32 is fixed. A temperature sensor 37 for detecting the temperature of the temperature sensor 38, a temperature adjustment medium supply device 42 having a temperature adjustment medium for changing the temperature of the chuck base 38, and a temperature adjustment medium supply device 42 from the detection signal of the temperature sensor 37. A temperature control unit 41 that issues a command to the chuck base 38 and a drive control unit 44 that outputs a scan command for the chuck base 38 are configured. The chuck base 38 is fixed to a driving mechanism (mask stage) (not shown) that scans and moves the chuck base 38 according to a command from the drive control unit 44.

  The electrostatic chuck 32 includes a first insulating layer 33 and a second insulating layer 34, and an electrode 35 for generating an adsorption force between the first insulating layer 33 and the second insulating layer 34. Is formed.

  A plurality of pin-like protrusions 36 are formed on the upper surface of the first insulating layer 33. The mask 31 is formed in the gap between the mask 31 and the electrostatic chuck 32 formed by the protrusions 36. A supply pipe 45 for supplying a cooling gas for cooling the gas and a recovery pipe 46 for collecting the cooling gas are provided.

  In such a configuration, when a voltage is applied to the electrode 35 of the electrostatic chuck 32 from a voltage control unit (not shown), charges having different signs are excited on the surface of the first insulating layer 33. At this time, a dielectric polarization phenomenon occurs on the surface of the first insulating layer 33, and an electrostatic force works with the mask 31. As a result, the mask 31 is supported and fixed on the plurality of protrusions 36 on the electrostatic chuck 32.

  The temperature sensor 37 is formed of, for example, a platinum side temperature resistor and has a resolution of about 0.01 ° C. Further, the temperature of the chuck base 38 can be detected with high accuracy by directly embedding the temperature sensor 37 in a sufficiently deep position of the chuck base 38.

  The flow path 39 provided in the chuck base 38 is for flowing a temperature-controlled temperature adjusting medium, and the temperature adjusting medium is supplied from the temperature adjusting medium supply device 42 via the flexible tube 43. The flexible tube 43 is made of metal, Teflon, or the like that generates less unnecessary gas in a vacuum. Further, the chuck base 38 is formed of a ceramic having a small temperature expansion coefficient, such as SiC or SiN, or glass, and is suppressed to an extremely small amount of thermal strain.

  The temperature control unit 41 obtains an output signal from the temperature sensor 37, instructs the temperature adjustment medium supply device 42, and controls the temperature of the temperature adjustment medium supplied to the chuck base 38.

  The electrostatic chuck 32 has a sufficient suction force for fixing the mask 31, and the mask 31 that has absorbed the exposure light thermally expands in the surface direction. The force obtained from the suction force × the friction coefficient of the electrostatic chuck 32. Suppress with. In addition, the temperature of the electrostatic chuck 32 is controlled with high accuracy in order to prevent the mask 31 from being displaced in the surface direction due to thermal expansion. Specifically, the temperature fluctuation of the electrostatic chuck 32 is controlled to be constant with high accuracy of 0.01 ° C. or less.

  By the way, in an exposure apparatus, exposure is generally performed after aligning a mask and a wafer with high accuracy, but in order to perform this alignment with high accuracy, as disclosed in JP-A-2-100231, A fine movement mechanism using a displacement member made of an elastic member having low rigidity such as a leaf spring and an actuator made of a piezoelectric element is required for the driving mechanism of the wafer or mask.

  However, as described above, since the fine movement mechanism has low rigidity, the electrostatic chuck 32 vibrates when the temperature adjusting medium is passed, and the line width accuracy of the transfer pattern is deteriorated. Therefore, in this embodiment, the chuck base 38 is fixed to a drive mechanism consisting of only a coarse movement mechanism having high rigidity, and the fine movement mechanism is provided on the wafer stage (see FIG. 1).

  Further, a configuration is provided that includes means for measuring the amount of deviation of the pattern interval on the exposed wafer, changing the temperature of the electrostatic chuck 32 so as to minimize the amount of deviation, and enlarging or reducing the electrostatic chuck 32. To do. When the electrostatic chuck 32 is enlarged or reduced, the mask 31 attracted and restrained by the electrostatic chuck 32 is also enlarged or reduced at the same time, so that the positional deviation of the pattern of the mask 31 can be corrected. The temperature correction of the electrostatic chuck 32 is performed by measuring in advance the relationship of the deviation amount of the wafer pattern after exposure with respect to the temperature change of the electrostatic chuck 32, and based on this data, the temperature control unit 41 uses the wafer pattern. The temperature of the electrostatic chuck 32 is controlled so that the amount of gap deviation is minimized. The amount of deviation of the wafer pattern interval may be obtained from a signal of an alignment adjusting means (not shown) for aligning the mask and the wafer, in addition to the method of measuring the exposed pattern interval.

  Further, as a temperature adjusting means for the electrostatic chuck 32, for example, a Peltier element as disclosed in JP-A-5-21308, for example, is used without using a temperature adjusting medium, and temperature control is performed at high speed and with high accuracy. You may go.

  With the above-described configuration, thermal deformation and displacement of the mask are prevented, and the overlay accuracy and line width accuracy of the transfer pattern are improved.

  In addition, since the mask shape can be varied depending on the temperature, it is possible to correct the pattern displacement due to the mirror surface shape, the arrangement position error, and the deformation of the mirror due to external force when supporting the X-ray optical system. The accuracy of overlaying is further improved.

  Further, since the drive mechanism of the chuck base 38 for fixing the electrostatic chuck 32 is made highly rigid, the vibration of the electrostatic chuck 32 is reduced, and the line width accuracy of the transfer pattern with respect to the wafer is further improved.

(Fourth embodiment)
Next, a method for manufacturing a semiconductor device (a semiconductor chip such as an IC or LSI, or a liquid crystal panel or a CCD) using the X-ray projection exposure apparatus will be described with reference to FIGS.

  FIG. 5 is a flowchart showing the procedure of a device manufacturing method using the X-ray projection exposure apparatus of the present invention. FIG. 6 is a flowchart showing the procedure of the wafer process shown in FIG.

  In FIG. 5, in step 1 (circuit design), first, a circuit design of a semiconductor device is performed. In step 2 (mask production), a mask on which the designed circuit pattern is formed is produced. In step S3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. Step S5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer manufactured in step S4, and includes processes such as an assembly process (dicing and bonding) and a package process (chip encapsulation). In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

  In FIG. 6, in the wafer process (step 4 in FIG. 5), first, the surface of the wafer is oxidized in step 11 (oxidation). In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed on the wafer by exposure using the X-ray projection exposure apparatus. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.

It is a side view which shows the principal part structure of a X-ray projection exposure apparatus. It is a sectional side view which shows the structure of 1st Example of the mask support apparatus used for the mask stage of the X-ray projection exposure apparatus shown in FIG. It is a figure which shows the structure of 2nd Example of a mask support apparatus, The figure (a) is a perspective view, The figure (b) is a sectional side view. It is a sectional side view which shows the structure of 3rd Example of a mask support apparatus. It is a flowchart which shows the procedure of the manufacturing method of the device using the X-ray projection exposure apparatus of this invention. 6 is a flowchart showing a procedure of the wafer process shown in FIG.

Explanation of symbols

1, 21, 31, 104 Mask 1a, 21a, 31a Base 1b, 21b, 31b Pattern region 2, 22, 32 Electrostatic chuck 3, 23, 33 First insulating layer 4, 24, 34 Second insulating layer 5a 1st electrode 5b 2nd electrode 6, 36 Protrusion part 7, 45 Supply pipe 8, 46 Recovery pipe 9, 44 Drive control part 10 Voltage control part 11 Pressure sensor 12 Adsorption control part 25, 35 Electrode 26 Earthing claw 27 Power supply 37 Temperature sensor 38 Chuck base 39 Flow path 41 Temperature control unit 42 Temperature adjusting medium supply device 43 Flexible tube 101 Undulator source 102 Convex total reflection mirror 103 Concave multilayer film reflection mirror 105 Reduction projection optical system 106 Wafer 107 Mask stage 108 Wafer stage

Claims (7)

An illumination system for illuminating the reflective mask with X-rays;
A projection optical system that projects an image of the pattern of the reflective mask onto a wafer;
Holding means for holding the reflective mask with electrostatic force;
Temperature adjusting means for adjusting the temperature of the holding means;
With
The reflective mask is
A multilayer film having the pattern formed on the surface;
A substrate on which the multilayer film is formed in a predetermined region on the surface;
Have
The holding means is
Holding the back surface of the substrate facing the front surface;
The temperature adjusting means includes
An X-ray projection exposure apparatus characterized in that the temperature of a portion of the holding means that holds the area of the back surface facing the predetermined area of the front surface of the substrate is adjusted. The temperature adjusting means includes
2. The X-ray projection exposure apparatus according to claim 1, further comprising a supply unit that supplies a temperature adjusting medium to a portion of the holding unit facing the predetermined region of the surface of the substrate. The holding means is
A chuck for holding the back surface of the substrate with electrostatic force;
A chuck base to which the chuck is fixed;
Have
The temperature adjusting means includes
The X-ray projection exposure apparatus according to claim 2, wherein the chuck base includes the supply unit. The temperature adjusting means includes
The X-ray projection exposure apparatus according to claim 2, further comprising a temperature sensor that detects a temperature of the holding unit. The temperature adjusting means includes
4. An X-ray projection exposure apparatus according to claim 3, further comprising a temperature sensor for detecting the temperature of the chuck base. The temperature adjusting means includes
2. The X-ray projection exposure apparatus according to claim 1, wherein the X-ray projection exposure apparatus is a Peltier element.   A device manufacturing method, comprising: exposing a wafer using the X-ray projection exposure apparatus according to any one of claims 1 to 6; and developing the exposed wafer.

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