JP2006049877A5 - - Google Patents
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- JP2006049877A5 JP2006049877A5 JP2005198485A JP2005198485A JP2006049877A5 JP 2006049877 A5 JP2006049877 A5 JP 2006049877A5 JP 2005198485 A JP2005198485 A JP 2005198485A JP 2005198485 A JP2005198485 A JP 2005198485A JP 2006049877 A5 JP2006049877 A5 JP 2006049877A5
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- JP
- Japan
- Prior art keywords
- film
- chip
- substrate
- manufacturing
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010408 film Substances 0.000 claims 34
- 239000000758 substrate Substances 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000010409 thin film Substances 0.000 claims 8
- 238000005498 polishing Methods 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
Claims (10)
前記薄膜集積回路上にフィルムを設け、
前記基板の他方の面を研削し、
研削した前記基板の他方の面を研磨し、
前記基板と前記薄膜集積回路が含む前記絶縁膜を切断して、前記基板と前記薄膜集積回路が積層されたＩＣチップを複数形成し、
前記ＩＣチップの間に隙間が形成されるように前記フィルムを延伸させることを特徴とするＩＣチップの作製方法。 On one surface of the base plate to form a thin film integrated circuit including a plurality of elements, the conductive layer and the insulating film,
A film is provided on the thin film integrated circuit,
Grinding the other side of the substrate,
Polishing the other side of the ground substrate,
And cutting the insulating film substrate and the thin film integrated circuit comprises, an IC chip which said substrate and said thin film integrated circuits are laminated to form a plurality,
A method for producing an IC chip, wherein the film is stretched so that a gap is formed between the IC chips.
前記フィルムを延伸させた後、前記ＩＣチップが分離されるように前記フィルムを切断し、
前記フィルムが接着された前記ＩＣチップを第１のテープの凹部に設け、
前記第１のテープに接するように第２のテープを設けることを特徴とするＩＣチップの作製方法。 In claim 1,
After stretching the film, cut the film so that the IC chip is separated,
Setting the IC chip in which the film is adhered to the concave portion of the first tape,
A method of manufacturing an IC chip, comprising providing a second tape so as to be in contact with the first tape.
前記薄膜集積回路上に第１のフィルムを設け、
前記第１のフィルム上に第２のフィルムを設け、
前記基板の他方の面を研削し、
研削した前記基板の他方の面を研磨し、
前記基板、前記薄膜集積回路が含む前記絶縁膜及び前記第１のフィルムを切断して、前記基板、前記薄膜集積回路及び前記第１のフィルムが積層されたＩＣチップを複数形成し、
前記ＩＣチップの間に隙間が形成されるように前記第２のフィルムを延伸させることを特徴とするＩＣチップの作製方法。 On one surface of the base plate to form a thin film integrated circuit including a plurality of elements, the conductive layer and the insulating film,
Providing a first film on the thin film integrated circuit;
Providing a second film on the first film;
Grinding the other side of the substrate,
Polishing the other side of the ground substrate,
The substrate, the insulating film and then cutting the first film the thin film integrated circuit comprises the substrate, the thin film integrated circuit and the first IC chip film is laminated to form a plurality,
IC chip manufacturing method of according to claim Rukoto by stretching the second film so that a gap is formed between the IC chip.
前記第２のフィルムを延伸させた後、前記第２のフィルムと前記ＩＣチップを分離し、
前記ＩＣチップの一方の面を第３のフィルムに接着させ、
前記ＩＣチップの他方の面を第４のフィルムに接着させることを特徴とするＩＣチップの作製方法。 In claim 3,
After stretching the second film , the second film and the IC chip are separated,
Bonding one side of the IC chip to a third film;
A method for manufacturing an IC chip, comprising bonding the other surface of the IC chip to a fourth film.
前記第２のフィルムを延伸させた後、前記ＩＣチップの一方の面と前記第２のフィルムとの密着性が弱くなるように、前記第２のフィルムに光を照射し、
前記第２のフィルムと前記ＩＣチップを分離し、
前記ＩＣチップの一方の面上に第３のフィルムを設け、
前記ＩＣチップの他方の面上に第４のフィルムを設け、
加熱処理と加圧処理の少なくとも一方を行って、前記ＩＣチップを前記第３のフィルムと前記第４のフィルムにより封止することを特徴とするＩＣチップの作製方法。 In claim 3,
After stretching the second film, the second film is irradiated with light so that the adhesion between one surface of the IC chip and the second film is weakened,
Separating the second film and the IC chip;
A third film is provided on one surface of the IC chip,
A fourth film is provided on the other surface of the IC chip,
A method for manufacturing an IC chip, wherein at least one of a heat treatment and a pressure treatment is performed, and the IC chip is sealed with the third film and the fourth film.
前記第２のフィルムを延伸させた後、前記第２のフィルムに光を照射し、前記ＩＣチップの他方の面上に第３のフィルムを設け、
前記第３のフィルムを加熱して、前記ＩＣチップの他方の面を前記第３のフィルムに接着させることにより、前記ＩＣチップの一方の面と前記第２のフィルムを分離し、
前記ＩＣチップの他方の面を第４のフィルムに接着させることを特徴とするＩＣチップの作製方法。 In claim 3,
After stretching the second film, the second film is irradiated with light, and a third film is provided on the other surface of the IC chip,
And heating the third film, by bonding the other surface of the IC chip to the third film, to separate the one side and the second film of the IC chip,
A method for manufacturing an IC chip, comprising bonding the other surface of the IC chip to a fourth film.
前記基板の厚さが１００μｍ以下になるまで、前記基板の他方の面を研削することを特徴とするＩＣチップの作製方法。 In any one of Claims 1 thru | or 6 ,
A method of manufacturing an IC chip, comprising grinding the other surface of the substrate until the thickness of the substrate becomes 100 μm or less.
前記基板の厚さが２０μｍ以下になるまで、研削した前記基板の他方の面を研磨することを特徴とするＩＣチップの作製方法。 In any one of Claims 1 thru | or 6 ,
A method for manufacturing an IC chip, comprising polishing the other surface of the ground substrate until the thickness of the substrate becomes 20 μm or less.
前記基板はガラス基板であることを特徴とするＩＣチップの作製方法。 In any one of Claims 1 thru | or 8 ,
An IC chip manufacturing method, wherein the substrate is a glass substrate.
前記導電層はアンテナとして機能することを特徴とするＩＣチップの作製方法。
In any one of Claims 1 thru | or 9 ,
The method for manufacturing an IC chip, wherein the conductive layer functions as an antenna.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005198485A JP5025103B2 (en) | 2004-07-09 | 2005-07-07 | IC chip fabrication method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004203906 | 2004-07-09 | ||
| JP2004203906 | 2004-07-09 | ||
| JP2005198485A JP5025103B2 (en) | 2004-07-09 | 2005-07-07 | IC chip fabrication method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006049877A JP2006049877A (en) | 2006-02-16 |
| JP2006049877A5 true JP2006049877A5 (en) | 2008-06-26 |
| JP5025103B2 JP5025103B2 (en) | 2012-09-12 |
Family
ID=36028014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005198485A Expired - Fee Related JP5025103B2 (en) | 2004-07-09 | 2005-07-07 | IC chip fabrication method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5025103B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008072087A (en) * | 2006-08-16 | 2008-03-27 | Kyoto Univ | Semiconductor device and manufacturing method of the semiconductor device, and display device |
| US9299614B2 (en) * | 2013-12-10 | 2016-03-29 | Applied Materials, Inc. | Method and carrier for dicing a wafer |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60189228A (en) * | 1984-03-08 | 1985-09-26 | Shinkawa Ltd | Chip taping apparatus |
| JPH0760848B2 (en) * | 1990-12-20 | 1995-06-28 | 松下電器産業株式会社 | Taping packaging method for electronic chip parts |
| JP2950106B2 (en) * | 1993-07-14 | 1999-09-20 | 松下電器産業株式会社 | Method for manufacturing optical element package |
| JPH08124881A (en) * | 1994-10-28 | 1996-05-17 | Nec Corp | Dicing tape and method for assembling semiconductor device using it |
| JP3893645B2 (en) * | 1996-03-18 | 2007-03-14 | ソニー株式会社 | Thin film semiconductor device and IC card manufacturing method |
| JP3602943B2 (en) * | 1997-07-25 | 2004-12-15 | シャープ株式会社 | Semiconductor wafer grinding machine |
| JP3993918B2 (en) * | 1997-08-25 | 2007-10-17 | 富士通株式会社 | Manufacturing method of semiconductor device |
| JPH11144019A (en) * | 1997-11-13 | 1999-05-28 | Sony Corp | Ic card |
| JP2000007020A (en) * | 1998-06-17 | 2000-01-11 | Nitto Denko Corp | Carrier material for chip electronic part and its manufacture |
| JP3816253B2 (en) * | 1999-01-19 | 2006-08-30 | 富士通株式会社 | Manufacturing method of semiconductor device |
| JP3538070B2 (en) * | 1999-07-08 | 2004-06-14 | 株式会社東芝 | Method for manufacturing semiconductor device |
| JP2002164512A (en) * | 2000-11-28 | 2002-06-07 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
| JP4886937B2 (en) * | 2001-05-17 | 2012-02-29 | リンテック株式会社 | Dicing sheet and dicing method |
| JP2003016414A (en) * | 2001-07-05 | 2003-01-17 | Toppan Printing Co Ltd | Sheet with non-contact type ic chip and its manufacturing method |
| JP3612317B2 (en) * | 2001-11-30 | 2005-01-19 | 株式会社東芝 | Manufacturing method of semiconductor device |
| JP3553551B2 (en) * | 2002-01-11 | 2004-08-11 | 沖電気工業株式会社 | Method of manufacturing semiconductor device using semiconductor wafer |
| JP2003256794A (en) * | 2002-02-28 | 2003-09-12 | Konica Corp | Method of manufacturing ic card, and ic card |
| JP2003257897A (en) * | 2002-03-01 | 2003-09-12 | Seiko Instruments Inc | Method for manufacturing semiconductor chip |
| JP3875130B2 (en) * | 2002-03-26 | 2007-01-31 | 株式会社東芝 | Display device and manufacturing method thereof |
| JP4364553B2 (en) * | 2002-08-30 | 2009-11-18 | シャープ株式会社 | Photoelectric conversion device and manufacturing method thereof |
-
2005
- 2005-07-07 JP JP2005198485A patent/JP5025103B2/en not_active Expired - Fee Related
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